CN100383539C - Bridge-type electric-field microsensor - Google Patents
Bridge-type electric-field microsensor Download PDFInfo
- Publication number
- CN100383539C CN100383539C CNB2005100406590A CN200510040659A CN100383539C CN 100383539 C CN100383539 C CN 100383539C CN B2005100406590 A CNB2005100406590 A CN B2005100406590A CN 200510040659 A CN200510040659 A CN 200510040659A CN 100383539 C CN100383539 C CN 100383539C
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- electric
- raceway groove
- field sensor
- field
- node
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Abstract
The present invention discloses a bridge-type electric-field microsensor used for electric field test, which is composed of two n ditch electric-field sensors and two p ditch electric-field sensors, wherein a drain electrode of one of the n ditch electric-field sensors and a source electrode of one of the p ditch electric-field sensors are connected and form a first node; a drain electrode of the other n ditch electric-field sensor and a source electrode of the other p ditch electric-field sensor are connected and form a second node; a power source is loaded between the first node and the second node; a source electrode of one of the n ditch electric-field sensors and a drain electrode of one of the p ditch electric-field sensors are connected and form a fourth node; a source electrode of the other n ditch electric-field sensor and a drain electrode of the other p ditch electric-field sensor are connected and form a third node; the third node and the fourth node form an output terminal. The present invention can inhibit temperature drift.
Description
Technical field
The present invention relates to a kind of electric-field microsensor, relate in particular to a kind of bridge-type electric-field microsensor that in microelectromechanical systems, uses.
Background technology
When using single EMOS pipe electric-field microsensor test electric field, because the carrier concentration of carrier mobility and doped semiconductor all can be subjected to Temperature Influence, therefore measurement result can change with variation of temperature, and neighbourhood noise also can produce very big influence to measurement result.
Summary of the invention
The invention provides a kind of bridge-type electric-field microsensor that temperature is floated that suppresses.
The present invention adopts following technical scheme:
A kind of bridge-type electric-field microsensor that is used for electrical field test, by ENMOS1, ENMOS1 ' two n raceway grooves electric-field sensor and EPMOS2, two p raceway grooves of EPMOS2 ' electric-field sensor is formed, wherein the drain electrode of ENMOS1 ' n raceway groove electric-field sensor is connected with the source electrode of EPMOS2 ' p raceway groove electric-field sensor wherein and forms first node, the source electrode of the drain electrode of ENMOS1 n raceway groove electric-field sensor and EPMOS2 p raceway groove electric-field sensor is connected and forms Section Point, loading power Vdd between first node and Section Point, the source electrode of above-mentioned ENMOS1 ' n raceway groove electric-field sensor is connected with the drain electrode of above-mentioned EPMOS2 p raceway groove electric-field sensor and forms the 4th node, the source electrode of above-mentioned ENMOS1 n raceway groove electric-field sensor is connected with the drain electrode of above-mentioned EPMOS2 ' p raceway groove electric-field sensor and forms the 3rd node, the 3rd node and the 4th node constitute output terminal, wherein, p raceway groove electric-field sensor comprises n type substrate, on substrate, be provided with coplanar two heavily doped P type contact regions, on heavily doped P type contact region is metal lead wire, between these two heavily doped P type contact regions, be provided with P type raceway groove and be attached thereto respectively, in P type contact region and the surface of P type raceway groove be provided with SiO
2Layer, n raceway groove electric-field sensor comprises p type substrate, on substrate, be provided with coplanar two heavily doped n type contact regions, on heavily doped n type contact region is metal lead wire, between these two heavily doped n type contact regions, be provided with n type raceway groove and be attached thereto respectively, in n type contact region and the surface of n type raceway groove be provided with SiO
2Layer.
Prior art is compared, and the present invention has following advantage:
(1) invention utilizes the drift principle (positive charge moves along direction of an electric field, the contrary direction of an electric field motion of negative charge) of electric charge in the doped semiconductor, induction field statically, thus improved reliability of the present invention.When detecting electric field, the big young pathbreaker of channel resistance of two n raceway groove electric-field microsensors and two p raceway groove electric-field microsensors changes by opposite direction.When the size of the channel resistance of n raceway groove electric-field microsensor and p raceway groove electric-field microsensor near the time, the bridge-type resistance connecting mode of this electric-field microsensor can effectively suppress temperature and float.
(2) the present invention and then adopted a kind of special p raceway groove electric-field sensor, these technical measures are utilized the drift principle of electric charge in the doped semiconductor, and (positive charge moves along direction of an electric field, the contrary direction of an electric field motion of negative charge), induction field statically, thus improved the reliability that electric field detects; Utilize the raceway groove of high breadth length ratio and on raceway groove, add small electric current, improved the resolution that electric field detects.
(3) the present invention also can adopt a kind of special n raceway groove electric-field sensor, these technical measures also are to utilize the drift principle of electric charge in the doped semiconductor (positive charge moves along direction of an electric field, the contrary direction of an electric field motion of negative charge), induction field statically, thus improved the reliability that electric field detects.Utilize the raceway groove of high breadth length ratio and on raceway groove, add small electric current, improved the resolution that electric field detects.
Description of drawings
Fig. 1 is a circuit diagram of the present invention.
Fig. 2 is the sectional view of p raceway groove electric-field sensor of the present invention.
Fig. 3 is the sectional view of n raceway groove electric-field sensor of the present invention.
Embodiment
A kind of bridge-type electric-field microsensor that is used for electrical field test, by ENMOS1, ENMOS1 ' two n raceway grooves electric-field sensor and EPMOS2, two p raceway grooves of EPMOS2 ' electric-field sensor is formed, wherein the drain electrode of ENMOS1 ' n raceway groove electric-field sensor is connected with the source electrode of EPMOS2 ' p raceway groove electric-field sensor wherein and forms first node 3, the source electrode of the drain electrode of ENMOS1 n raceway groove electric-field sensor and EPMOS2 p raceway groove electric-field sensor is connected and forms Section Point 4, loading power Vdd between first node 3 and Section Point 4, the source electrode of above-mentioned ENMOS1 ' n raceway groove electric-field sensor is connected with the drain electrode of above-mentioned EPMOS2 p raceway groove electric-field sensor and forms the 4th node 6, the source electrode of above-mentioned ENMOS1 n raceway groove electric-field sensor is connected with the drain electrode of above-mentioned EPMOS2 ' p raceway groove electric-field sensor and forms the 3rd node 5, the 3rd node 5 and the 4th node 6 constitute output terminal, wherein, p raceway groove electric-field sensor comprises n type substrate 21, on substrate 21, be provided with coplanar two heavily doped P type contact regions 23, on heavily doped P type contact region 23 is metal lead wire 25, between these two heavily doped P type contact regions, be provided with P type raceway groove 22 and be attached thereto respectively, in P type contact region 23 and the surface of P type raceway groove 22 be provided with SiO
2Layer 24, n raceway groove electric-field sensor comprises p type substrate 11, on substrate 11, be provided with coplanar two heavily doped n type contact regions 13, on heavily doped n type contact region 13 is metal lead wire 15, between these two heavily doped n type contact regions, be provided with n type raceway groove 12 and be attached thereto respectively, in n type contact region 13 and the surface of n type raceway groove 12 be provided with SiO
2Layer 14.
When external electrical field incident n raceway groove electric-field sensor, p raceway groove electric-field sensor, the channel current of n raceway groove electric-field sensor will increase with the increase of incident electric field, and p raceway groove electric-field sensor is then opposite, and its channel current will reduce with the increase of incident electric field.Can find by the resistance that calculates Wheatstone bridge, when the size of the channel resistance of n raceway groove electric-field sensor, p raceway groove electric-field sensor near the time, the bridge-type resistance connecting mode of this electric-field microsensor can effectively suppress temperature and float.The present invention utilizes the standard electric field to demarcate the output current of this circuit earlier before use.When measuring electric field, then by the output current of metering circuit, the contrast calibration value can obtain the intensity of incident electric field.
Claims (1)
1. bridge-type electric-field microsensor that is used for electrical field test, it is characterized in that by ENMOS1, ENMOS1 ' two n raceway grooves electric-field sensor and EPMOS2, two p raceway grooves of EPMOS2 ' electric-field sensor is formed, wherein the drain electrode of ENMOS1 ' n raceway groove electric-field sensor is connected with the source electrode of EPMOS2 ' p raceway groove electric-field sensor wherein and forms first node (3), the source electrode of the drain electrode of ENMOS1 n raceway groove electric-field sensor and EPMOS2 p raceway groove electric-field sensor is connected and forms Section Point (4), loading power Vdd between first node (3) and Section Point (4), the source electrode of above-mentioned ENMOS1 ' n raceway groove electric-field sensor is connected with the drain electrode of above-mentioned EPMOS2 p raceway groove electric-field sensor and forms the 4th node (6), the source electrode of above-mentioned ENMOS1 n raceway groove electric-field sensor is connected with the drain electrode of above-mentioned EPMOS2 ' p raceway groove electric-field sensor and forms the 3rd node (5), the 3rd node (5) constitutes output terminal with the 4th node (6), wherein, p raceway groove electric-field sensor comprises n type substrate (21), on substrate (21), be provided with coplanar two heavily doped P type contact regions (23), going up in heavily doped P type contact region (23) is metal lead wire (25), between these two heavily doped P type contact regions, be provided with P type raceway groove (22) and be attached thereto respectively, in P type contact region (23) and the surface of P type raceway groove (22) be provided with SiO
2Layer (24), n raceway groove electric-field sensor comprises p type substrate (11), on substrate (11), be provided with coplanar two heavily doped n type contact regions (13), going up in heavily doped n type contact region (13) is metal lead wire (15), between these two heavily doped n type contact regions, be provided with n type raceway groove (12) and be attached thereto respectively, in n type contact region (13) and the surface of n type raceway groove (12) be provided with SiO
2Layer (14).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100406590A CN100383539C (en) | 2005-06-22 | 2005-06-22 | Bridge-type electric-field microsensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2005100406590A CN100383539C (en) | 2005-06-22 | 2005-06-22 | Bridge-type electric-field microsensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1710432A CN1710432A (en) | 2005-12-21 |
| CN100383539C true CN100383539C (en) | 2008-04-23 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005100406590A Expired - Fee Related CN100383539C (en) | 2005-06-22 | 2005-06-22 | Bridge-type electric-field microsensor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100383539C (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4386315A (en) * | 1980-04-22 | 1983-05-31 | Friedmann, Youn And Associates Inc. | Electric field detector |
| CN1035176A (en) * | 1988-02-10 | 1989-08-30 | 杭州大学 | Disturbance electric field sensor |
| CN1217472A (en) * | 1993-07-07 | 1999-05-26 | 株式会社东金 | Electric field sensor |
-
2005
- 2005-06-22 CN CNB2005100406590A patent/CN100383539C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4386315A (en) * | 1980-04-22 | 1983-05-31 | Friedmann, Youn And Associates Inc. | Electric field detector |
| CN1035176A (en) * | 1988-02-10 | 1989-08-30 | 杭州大学 | Disturbance electric field sensor |
| CN1217472A (en) * | 1993-07-07 | 1999-05-26 | 株式会社东金 | Electric field sensor |
| CN1439882A (en) * | 1993-07-07 | 2003-09-03 | Nec东金株式会社 | Electromagnetic field sensors |
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| Publication number | Publication date |
|---|---|
| CN1710432A (en) | 2005-12-21 |
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Granted publication date: 20080423 Termination date: 20120622 |