CN1697176A - Thin film in low dielectric constant and fabricating method - Google Patents
Thin film in low dielectric constant and fabricating method Download PDFInfo
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- CN1697176A CN1697176A CN 200410018233 CN200410018233A CN1697176A CN 1697176 A CN1697176 A CN 1697176A CN 200410018233 CN200410018233 CN 200410018233 CN 200410018233 A CN200410018233 A CN 200410018233A CN 1697176 A CN1697176 A CN 1697176A
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Abstract
The disclosed thin film is laminated film composed of multiple layers of film formed in sequence on film layer, where interconnection lines in cupper are formed already. The said laminated film includes copper diffusion barrier of SiN or SiC as well as fluorin added silicate glass. Functions of disclosed thin film are as following: preventing defect of disconnection caused by damages on photoresist from amine in subsequent process of composition by photo etching; preventing ashing defect in dielectric layer of silicon oxide containing carbon (SiOC) in low dielectric constant; increasing rigidity of SiOC dielectric layer, in favor of subsequent CMP process. Said thin film also can form conducting pin in high quality to connect interconnection wires in upper layer and lower layer.
Description
Technical field
The present invention relates in the semiconductor device, form the low dielectric constant films and the manufacture method thereof of conduction contact bolt therein.
Background technology
Semiconductor device has sandwich construction, by the conduction contact bolt that forms in the through hole realize layer with layer between be connected (referring to the Chinese patent publication number, CN 1185026A).The conduction contact bolt is formed in the low-k dielectric film, and therefore, low-k dielectric film is to reduce the key that interconnection line disconnects, and can reduce spuious capacity with low-k dielectric film.But the hardness of low-k dielectric film is too little, that is to say, the deielectric-coating of low-k is too soft, occurs stack membrane easily separately and problem such as through hole damage in the cmp that carries out subsequently (CMP).
Fig. 1 demonstrates the defective pattern of low-k dielectric film.Form in the lithography corrosion process that through hole carried out in low-k dielectric film, high resolution lithography glue is more responsive to the damage that amine causes.Cause amine that high resolution lithography glue damages from the barrier layer that for example constitutes with SiN or SiCN, the SiON layer, or carry out the NH that uses in the copper plasma treatment
3Damage the conductive plugs that can not form the connection interconnection line in the damage district that forms owing to photoresist, causing interconnection to disconnect.
Summary of the invention
In order to overcome above-mentioned damaging, cause the defective that disconnects that interconnects to propose the present invention and in damaging the district, can not form interconnection owing to amine makes photoresist
The objective of the invention is, propose a kind of low-k dielectric film.Separate and the through hole damage with the lamination rete that can prevent from by low-k dielectric film of the present invention in the CMP that carries out subsequently handles, to cause, and the dielectric constant of the deielectric-coating of low-k does not increase.
By another object of the present invention is the formation method that proposes a kind of low-k dielectric film.Can prevent that with low-k dielectric film the lamination rete that causes from separating and through hole damages in the CMP that carries out subsequently handles, and the dielectric constant of the deielectric-coating of low-k does not increase by the inventive method manufacturing.
By film having low dielectric constant of the present invention is the stack membrane that multilayer film constitutes, and order forms on the rete that is formed with copper interconnecting line: the silicate glass layer (4) of the silicate glass layer (2) of SiN or SiC copper diffusion barrier layer (1), fluoridize, silica (SiOC) low-k dielectric film (3) of carbon containing and fluoridize.The silicate glass (2) that is arranged in the fluoridize below silica (SiOC) low-k dielectric film (3) of carbon containing can stop the amine (NHx) from following SiN or SiC copper diffusion barrier layer (1).The silicate glass layer (4) that is arranged in the fluoridize above silica (SiOC) low-k dielectric film (3) of carbon containing can stop from top SiON amine (NHx) and from the amine (NHx) of copper plasma treatment, silica (SiOC) low-k dielectric film (3) ashing that prevents carbon containing damages, with the hardness of silica (SiOC) deielectric-coating (3) that increases the low-k carbon containing, be beneficial to follow-up CMP and handle.In the low-k dielectric film that constitutes like this, can form the high-quality conduction contact bolt that connects the upper and lower interconnection line, for example copper bolt.
Description of drawings
The accompanying drawing that comprises in the application's book demonstrates embodiments of the invention, and the accompanying drawing that comprises among the application is a component part of specification, and accompanying drawing and specification and claims one are used from explanation flesh and blood of the present invention, are used for understanding better the present invention.Same or analogous component part is indicated with identical reference number in the accompanying drawing.In the accompanying drawing:
Fig. 1 is the existing low-k dielectric film electron micrograph that wherein is formed with conductive plugs;
Fig. 2 shows by the structure cutaway view that wherein is formed with the lamination low-k dielectric film of conductive plugs of the present invention;
Fig. 3 shows the flow chart that forms by lamination low-k dielectric film structure of the present invention.
The description of contents of reference number indication in the accompanying drawing:
The copper diffusion barrier layer that 1-silicon nitride (SiN) or carborundum (SiC) constitute
The silicate glass layer of 2-fluoridize;
3-for example is the low-k dielectric film of the silica (SiOC) of carbon containing;
The silicate glass layer of 4-fluoridize;
The copper bolt that 5-forms in the low-k dielectric film of laminated construction is arranged.
Embodiment
Below referring to description of drawings by the structure and the formation method of low-k dielectric film of the present invention.
By low-k dielectric film of the present invention is stacked multilayer film, comprising: and the silicate glass layer (FSG) (2) of copper diffusion barrier layer (1), fluoridize, the film having low dielectric constant of CVD method deposit (hereinafter to be referred as: be that dielectric constant range for example is 2.8 to 3.5 the silicate glass layer (FSG) (4) that contains silicon oxide carbide (SiOC) film (3), fluoridize low K).
Be included on the rete that is formed with copper interconnecting line order by the formation method of low-k dielectric film of the present invention and carry out following steps:
Step 1 is carried out the copper plasma treatment;
Step 2, with the copper diffusion barrier layer (1) that physical vapor deposition (for example, sputter) method constitutes with silicon nitride (SIN) or carborundum (SIC), the condition of deposit is:
Deposition conditions during the copper diffusion barrier layer (1) that constitutes with silicon nitride (SIN) is:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W
Gas: SiH4, NH3, N2 or SiH4, He, N2
Deposition conditions during the copper diffusion barrier layer (1) that constitutes with carborundum (SiC) is:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W
Gas: 3MS, NH
3, N
2(3MS=trimethyl silane) or 3MS, NH
3, He or 4MS, NH
3, N
2(4MS=tetramethylsilane) or 4MS, NH
3, He;
The thickness of copper diffusion barrier layer (1) is 20 to 2000_;
Step 3, with CVD (Chemical Vapor Deposition) method (CVD) deposit film having low dielectric constant (low K), film having low dielectric constant be dielectric constant range for example be 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3), thicknesses of layers is 500_ to 10um; Or form the silicate glass layer (FSG) (2) of fluoridize with spin coating method, form the rotary speed that the spin coating method of the silicate glass layer (FSG) (2) of fluoridize uses and be: 3000rpm (number of revolutions/minute); Or oxide-film (Oxide), formed thicknesses of layers scope is that 200_ is to 500_.
Formed film having low dielectric constant be dielectric constant range for example be 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3), also can be film having low dielectric constant (low K), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of film having low dielectric constant/fluoridize (Lowk/FSG); Or the combined films of film having low dielectric constant/oxide-film (Lowk/oxide); Or the combined films of the silicate glass layer (Low k/Oxide/FSG) of the silicate glass layer/oxide-film of film having low dielectric constant/fluoridize (Low k/FSG/Oxide) or film having low dielectric constant/oxide-film/fluoridize; Or the combined films of the silicate glass layer/film having low dielectric constant of fluoridize/oxide-film (FSG/Low k/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/film having low dielectric constant/(FSG/oxide/Low k); Or the combined films of the silicate glass layer/film having low dielectric constant of fluoridize (FSG/Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide); Or the combined films of the silicate glass layer/film having low dielectric constant of oxide-film/fluoridize (Oxide/FSG/Low k); Or the combined films of the silicate glass layer of oxide-film/film having low dielectric constant/fluoridize (Oxide/Low k/FSG); Or various combined films.
The formation condition that contains silicon oxide carbide (SiOC) deielectric-coating of low-k is:
Temperature: 300-400 ℃, pressure: 2-10Torr, low frequency radio frequency (RF) power: 50-700W, high-frequency radio frequency (RF) power: 50-700W
Gas: OMCAT (octamethylcy-clotetrasiloxane)/O
2/ He, or OMCAT/CO
2/ He, or OMCAT/NO
2/ He, or TOMCAT (tetramethyl-ring tetrasiloxane)/CO
2/ He, or TOMCAT/O
2/ He or TOMCAT/N
2O/He.
Step 4, the copper diffusion barrier layer (1) that established silicon nitride (SiN) or carborundum (SiC) constitute, with CVD (Chemical Vapor Deposition) method (CVD) deposit film having low dielectric constant or with spin coating method form fluoridize silicate glass layer (hereinafter to be referred as: FSG) (2) or oxide-film composition form reeded through hole;
Step 5 is removed part and is formed the silicate glass layer (2) of fluoridize with CVD (Chemical Vapor Deposition) method (CVD) deposit film having low dielectric constant or with spin coating method, and the thickness of the film of removing is the height of through hole, and for example 200_ is to 500_.
Step 6, deposit ultralow dielectric deielectric-coating, form the silicate glass layer (4) of fluoridize on the ultralow dielectric deielectric-coating with spin coating method, the number of revolutions that spin coating method forms the silicate glass layer (4) of fluoridize is: 3000rpm (number of revolutions/minute); The thickness of the film that forms is that 3000_ is to 1000_.
Step 7, the deposit low-k dielectric film, or, the silicate glass layer of fluoridize (4), and carry out the smooth processing of CMP, the thicknesses of layers scope of formation is that 500_ is to 1000_.
The silicate glass layer of fluoridize (4) formation condition is;
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W
Gas: SiH
4, SiF
4, N
2O, N
2Or SiH4, SiF4, O
2, He, N
2
Form film having low dielectric constant with laminated construction by above step.Form in the reeded through hole at the photoetching corrosion composition then and form conductive plugs, for example the copper bolt ties the copper interconnecting line that connects the upper and lower with formed copper.
With can be in forming the photoetching corrosion composition of the conductive plugs of copper bolt for example, prevent that photoresist from damaging and can not form through hole and prevent the conductive plugs of for example copper bolt that can not be formed for interconnecting by the film having low dielectric constant that laminated construction arranged of the present invention.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the specification just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the present invention.The scope of protection of present invention is defined by appending claims and equivalent thereof.
Claims (19)
1, film having low dielectric constant is characterized in that, film having low dielectric constant is the stack membrane of the multilayer film formation that order forms on the rete that is formed with copper interconnecting line, and stack membrane comprises:
SiN or SiC copper diffusion barrier layer (1);
The silicate glass layer of fluoridize (2);
The silica of carbon containing (SiOC) low-k dielectric film (3); With
The silicate glass layer of fluoridize (4);
Wherein, the silicate glass that is arranged in the fluoridize below silica (SiOC) low-k dielectric film of carbon containing can stop the amine (NHx) from following SiN or SiC copper diffusion barrier layer
The silicate glass that is arranged in the fluoridize of silica (SiOC) above the low-k dielectric film of carbon containing can stop from top SiON amine (NHx) and from the amine (NHx) of copper plasma treatment, silica (SiOC) the low-k dielectric film ashing that prevents carbon containing damages, with the hardness of silica (SiOC) deielectric-coating that increases the low-k carbon containing, be beneficial to follow-up CMP and handle.In the low-k dielectric film that constitutes like this, can form the conductive plugs of the high-quality for example copper bolt that connects the upper and lower interconnection line.
2, the film having low dielectric constant by claim 1 is characterized in that,
The thickness of copper diffusion barrier layer (1) is 20 to 2000_.
3, the film having low dielectric constant by claim 1 is characterized in that the silicate glass layer of fluoridize (2) forms with spin-coating method.
4, the film having low dielectric constant by claim 1 is characterized in that,
The thickness range of the silicate glass layer of fluoridize (2) is that 200_ is to 500_.
5 film having low dielectric constants by claim 1 is characterized in that,
Contain film having low dielectric constant (3) chemical gas-phase deposition method (CVD) deposit of silicon oxide carbide (SiOC);
6, the film having low dielectric constant by claim 5 is characterized in that, contains the dielectric constant range of the film having low dielectric constant (3) of silicon oxide carbide (SiOC), for example, is 2.8 to 3.5.
7, the film having low dielectric constant by claim 5 is characterized in that the thicknesses of layers that contains the film having low dielectric constant (3) of silicon oxide carbide (SiOC) is 500_to 10um.
8, the film having low dielectric constant by claim 1 is characterized in that, forms the silicate glass layer (4) of fluoridize with spin-coating method.
9, the film having low dielectric constant by claim 5 is characterized in that the thickness range of the silicate glass layer of fluoridize (4) is that 500_ is to 1000_.
10 film having low dielectric constants by claim 1, it is characterized in that, formed film having low dielectric constant be dielectric constant range for example be 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3) film, also can be film having low dielectric constant (low K), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of film having low dielectric constant/fluoridize (Lowk/FSG); Or the combined films of film having low dielectric constant/oxide-film (Low k/oxide); Or the combined films of the silicate glass layer (Low k/Oxide/FSG) of the silicate glass layer/oxide-film of film having low dielectric constant/fluoridize (Low k/FSG/Oxide) or film having low dielectric constant/oxide-film/fluoridize; Or the combined films of the silicate glass layer/film having low dielectric constant of fluoridize/oxide-film (FSG/Lowk/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/film having low dielectric constant/(FSG/oxide/Low k); Or the combined films of the silicate glass layer/film having low dielectric constant of fluoridize (FSG/Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide); Or the combined films of the silicate glass layer/film having low dielectric constant of oxide-film/fluoridize (Oxide/FSG/Low k); Or the combined films of the silicate glass layer of oxide-film/film having low dielectric constant/fluoridize (Oxide/Low k/FSG); Or various combined films.
11, the manufacture method of film having low dielectric constant is characterized in that, is included in to carry out following steps on the rete that is formed with copper interconnecting line in proper order:
Step 1 is carried out the copper plasma treatment;
Step 2, the copper diffusion barrier layer (1) that deposit constitutes with silicon nitride (SIN) or carborundum (SIC), the thickness of copper diffusion barrier layer (1) is 20 to 2000_;
Step 3, with CVD (Chemical Vapor Deposition) method (CVD) deposit film having low dielectric constant, the film having low dielectric constant dielectric constant range for example be 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3), thicknesses of layers is 500_to 10um; Or forming the silicate glass layer (2) of fluoridize with spin coating method, the rotary speed of the spin coating method of the silicate glass layer of fluoridize (2) is: 3000rpm (number of revolutions/minute); Or oxide-film; Formed thicknesses of layers scope is that 200_ is to 500_;
Step 4, the copper diffusion barrier layer (1) that established silicon nitride (SiN) or carborundum (SiC) constitute, form the silicate glass layer (2) or the oxide-film composition of fluoridize, form reeded through hole with CVD (Chemical Vapor Deposition) method (CVD) deposit film having low dielectric constant or with spin coating method;
Step 5 is removed part and is formed the silicate glass layer (2) of fluoridize with CVD (Chemical Vapor Deposition) method (CVD) deposit film having low dielectric constant or with spin coating method, and the thickness of the film of removing is the height of through hole, and for example 200_ is to 500_;
Step 6, deposit ultralow dielectric deielectric-coating, form the silicate glass layer (4) of fluoridize on the ultralow dielectric deielectric-coating with spin coating method, the number of revolutions that spin coating method forms the silicate glass layer (4) of fluoridize is: 3000rpm (number of revolutions/minute); The thickness of the film that forms is that 3000_ is to 1000_;
Step 7, the deposit low-k dielectric film, or, the silicate glass layer of fluoridize (4),, and carry out CMP, the thicknesses of layers scope of formation is that 500_ is to 1000_;
12, the low-k film manufacturing method by claim 11 is characterized in that the thickness range of the silicate glass layer of fluoridize (2) is that 200_ is to 500_.
13, the low-k film manufacturing method by claim 11 is characterized in that, contains the dielectric constant range of the film having low dielectric constant (3) of silicon oxide carbide (SiOC), for example, is 2.8 to 3.5.
14, the low-k film manufacturing method by claim 11 is characterized in that the thicknesses of layers scope that contains the film having low dielectric constant (3) of silicon oxide carbide (SiOC) is 500_to 10um.
15, the low-k film manufacturing method by claim 11 is characterized in that the thickness range of the silicate glass layer of fluoridize (4) is that 500_ is to 1000_.
16, the low-k film manufacturing method by claim 11 is characterized in that, in the step 2, the deposition conditions that constitutes copper diffusion barrier layer (1) with silicon nitride (SiN) is:
Temperature: 300-400 ℃, pressure: 2-10Torr, RF power: 50-700W
Gas: SiH
4, NH
3, N
2Or SiH
4, He, N
2
17,, it is characterized in that in the step 2, the deposition conditions during with the copper diffusion barrier layer (1) of carborundum (SIC) formation is by the low-k film manufacturing method of claim 11:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W
Gas: 3MS, NH
3, N
2(3MS=trimethyl silane; ) or 3MS, NH
3, He or 4MS, NH
3, N
2(4MS=tetramethylsilane), or 4MS, NH
3, He.
18, low-k film manufacturing method by claim 11, it is characterized in that, formed film having low dielectric constant is a dielectric constant range, for example be: 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3) film, also can be film having low dielectric constant (low K), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of film having low dielectric constant/fluoridize (Lowk/FSG); Or the combined films of film having low dielectric constant/oxide-film (Low k/oxide); Or the combined films of the silicate glass layer (Lowk/Oxide/FSG) of the silicate glass layer/oxide-film of film having low dielectric constant/fluoridize (Lowk/FSG/Oxide) or film having low dielectric constant/oxide-film/fluoridize; Or the combined films of the silicate glass layer/film having low dielectric constant of fluoridize/oxide-film (FSG/Low k/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/film having low dielectric constant/(FSG/oxide/Low k); Or the combined films of the silicate glass layer/film having low dielectric constant of fluoridize (FSG/Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide); Or the combined films of the silicate glass layer/film having low dielectric constant of oxide-film/fluoridize (Oxide/FSG/Low k); Or the combined films of the silicate glass layer of oxide-film/film having low dielectric constant/fluoridize (Oxide/Low k/FSG); Or various combined films.
19, the low-k film manufacturing method by claim 11 is characterized in that the formation condition that contains silicon oxide carbide (SiOC) deielectric-coating of low-k is:
Temperature: 300-400 ℃, pressure: 2-10Torr, low frequency radio frequency (RF) power: 50-700W, high-frequency radio frequency (RF) power: 50-700W
Gas: OMCAT (octamethylcy-clotetrasiloxane)/O2/He, or OMCAT/CO2/He, or OMCAT/NO2/He, or TOMCAT (tetramethyl-ring tetrasiloxane)/CO
2/ He, or TOMCAT/O
2/ He or TOMCAT/N
2O/He.
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|---|---|---|---|
| CNB2004100182330A CN100388480C (en) | 2004-05-11 | 2004-05-11 | Thin film in low dielectric constant and fabricating method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100182330A CN100388480C (en) | 2004-05-11 | 2004-05-11 | Thin film in low dielectric constant and fabricating method |
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| Publication Number | Publication Date |
|---|---|
| CN1697176A true CN1697176A (en) | 2005-11-16 |
| CN100388480C CN100388480C (en) | 2008-05-14 |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100459064C (en) * | 2005-12-12 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Method for improving adhesive strength of low-dielectric constant layer |
| CN102412196A (en) * | 2011-09-15 | 2012-04-11 | 上海华力微电子有限公司 | Fabrication method for copper Damascus interconnected structure |
| CN103531527A (en) * | 2012-07-03 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for metal interconnection structure |
| CN108389782A (en) * | 2018-03-06 | 2018-08-10 | 崔金益 | A method of forming ultra low k dielectric layer |
| CN109119339A (en) * | 2018-08-26 | 2019-01-01 | 合肥安德科铭半导体科技有限公司 | A kind of SiCO material spacer layer of low-k and its preparation method and application |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6261945B1 (en) * | 2000-02-10 | 2001-07-17 | International Business Machines Corporation | Crackstop and oxygen barrier for low-K dielectric integrated circuits |
| TW476134B (en) * | 2000-02-22 | 2002-02-11 | Ibm | Method for forming dual-layer low dielectric barrier for interconnects and device formed |
| JP2003017490A (en) * | 2001-07-02 | 2003-01-17 | Semiconductor Leading Edge Technologies Inc | Method of forming insulation film and semiconductor device |
| US6664177B1 (en) * | 2002-02-01 | 2003-12-16 | Taiwan Semiconductor Manufacturing Company | Dielectric ARC scheme to improve photo window in dual damascene process |
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2004
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100459064C (en) * | 2005-12-12 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Method for improving adhesive strength of low-dielectric constant layer |
| CN102412196A (en) * | 2011-09-15 | 2012-04-11 | 上海华力微电子有限公司 | Fabrication method for copper Damascus interconnected structure |
| CN103531527A (en) * | 2012-07-03 | 2014-01-22 | 中芯国际集成电路制造(上海)有限公司 | Manufacturing method for metal interconnection structure |
| CN103531527B (en) * | 2012-07-03 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | The manufacture method of metal interconnection structure |
| CN108389782A (en) * | 2018-03-06 | 2018-08-10 | 崔金益 | A method of forming ultra low k dielectric layer |
| CN109119339A (en) * | 2018-08-26 | 2019-01-01 | 合肥安德科铭半导体科技有限公司 | A kind of SiCO material spacer layer of low-k and its preparation method and application |
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| Publication number | Publication date |
|---|---|
| CN100388480C (en) | 2008-05-14 |
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Effective date of registration: 20111123 Address after: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20080514 Termination date: 20180511 |