CN1716547A - Super low dielectric constant film and its producing method - Google Patents
Super low dielectric constant film and its producing method Download PDFInfo
- Publication number
- CN1716547A CN1716547A CN 200410025643 CN200410025643A CN1716547A CN 1716547 A CN1716547 A CN 1716547A CN 200410025643 CN200410025643 CN 200410025643 CN 200410025643 A CN200410025643 A CN 200410025643A CN 1716547 A CN1716547 A CN 1716547A
- Authority
- CN
- China
- Prior art keywords
- film
- ultralow dielectric
- oxide
- dielectric film
- fluoridize
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Abstract
The present invention discloses a kind of super low dielectric constant film and its making process. The super low dielectric constant film is laminated film comprising several layers of film successively formed on film with formed copper interconnection wires. The laminated film includes copper diffusion barring SiN or SiC layer, fluoric silicate glass or unmixed silicate glass. It can avoid the damage of photoresist and disconnection of wires caused by amine in subsequent itching to form pattern, prevent the graying damage of the low dielectric constant SiOC film, increase the hardness of the low dielectric constant SiOC film and favor to the subsequent CMP treatment.
Description
Technical field
The present invention relates in the semiconductor device, form the ultralow dielectric film and the manufacture method thereof of conduction contact bolt therein.
Background technology
Semiconductor device has sandwich construction, by the conduction contact bolt that forms in the through hole realize layer with layer between be connected (referring to the Chinese patent publication number, CN1185026A).The conduction contact bolt is formed in the low-k dielectric film, and at present up-to-date modular construction all adopts advanced low-k materials (low electric capacity) and copper conductor technology (low resistance) to reduce the time delay effect of multiple layer metal in connecting.Therefore, low-k dielectric film is to reduce the key that interconnection line disconnects, and can reduce spuious capacity with low-k dielectric film.But in order to reach low-dielectric matter, advanced low-k materials is generally organized loose, and mechanical strength is undesirable.That is to say that the deielectric-coating of low-k is too soft, in the cmp that carries out subsequently (CMP), occur stack membrane easily separately and problem such as through hole damage.
Fig. 1 demonstrates the defective pattern of low-k dielectric film.Form in the lithography corrosion process that through hole carried out in low-k dielectric film, high resolution lithography glue is more responsive to the damage that amine causes.Cause amine that high resolution lithography glue damages from the barrier layer that for example constitutes with SiN or SiCN, the SiON layer, or carry out the NH that uses in the copper plasma treatment
3Damage the conductive plugs that can not form the connection interconnection line in the damage district that forms owing to photoresist, causing interconnection to disconnect.
The ultralow dielectric deielectric-coating that the present invention adopts has following characteristics:
Density is more much lower than general low-k dielectric film (dielectric constant is generally 2.8～3.5); The ultralow dielectric deielectric-coating is softer, hardness＜1Gpa, and general low-k dielectric film hardness is at 1.5～2.0Gpa; The comparison of young's modulus (Young ' s Modulus), ultralow dielectric deielectric-coating of the present invention is less than 8Gpa, and general low-k dielectric film is greater than 8.5Gpa; Micropore (pore) is arranged in the ultralow dielectric deielectric-coating of the present invention, and do not have in the general low-k dielectric film.
Summary of the invention
Because ultra-low dielectric constant material hardness is low, easy over worn shortcoming proposes the present invention in CMP in order to overcome above-mentioned
An object of the present invention is, propose a kind of ultralow dielectric deielectric-coating.Separate and the through hole damage with the lamination rete that can prevent from by ultralow dielectric deielectric-coating of the present invention in the CMP that carries out subsequently handles, to cause, and the dielectric constant of the deielectric-coating of ultralow dielectric does not increase.
By another object of the present invention is the formation method that proposes a kind of ultralow dielectric deielectric-coating.Can prevent that with ultralow dielectric deielectric-coating the lamination rete that causes from separating and through hole damages in the CMP that carries out subsequently handles, and the dielectric constant of the deielectric-coating of ultralow dielectric does not increase by the inventive method manufacturing.
By ultralow dielectric film of the present invention is the stack membrane that multilayer film constitutes, and order forms on the rete that is formed with copper interconnecting line: the silicate glass (FSG) of SiN or SiC copper diffusion barrier layer (1), fluoridize or pure silicon silicate glass (USG) layer (2), silica (SiOC) the ultralow dielectric deielectric-coating (3) of carbon containing and the silicate glass layer (4) of fluoridize.The silicate glass (2) that is arranged in the fluoridize below silica (SiOC) the ultralow dielectric deielectric-coating (3) of carbon containing can stop the amine (NHx) from following SiN or SiC copper diffusion barrier layer (1).The silicate glass layer (4) that is arranged in the fluoridize above silica (SiOC) the ultralow dielectric deielectric-coating (3) of carbon containing can stop from top SiON amine (NHx) and from the amine (NHx) of copper plasma treatment, silica (SiOC) ultralow dielectric deielectric-coating (3) ashing that prevents carbon containing damages, with the hardness of silica (SiOC) deielectric-coating (3) that increases the ultralow dielectric carbon containing, be beneficial to follow-up CMP and handle.In the ultralow dielectric deielectric-coating that constitutes like this, can form the high-quality conduction contact bolt that connects the upper and lower interconnection line, for example copper bolt.
Description of drawings
The accompanying drawing that comprises in the application's book demonstrates embodiments of the invention, and the accompanying drawing that comprises among the application is a component part of specification, and accompanying drawing and specification and claims one are used from explanation flesh and blood of the present invention, are used for understanding better the present invention.Same or analogous component part is indicated with identical reference number in the accompanying drawing.In the accompanying drawing:
Fig. 1 is the existing ultralow dielectric deielectric-coating electron micrograph that wherein is formed with conductive plugs;
Fig. 2 shows by the structure cutaway view that wherein is formed with the lamination ultralow dielectric deielectric-coating of conductive plugs of the present invention;
Fig. 3 shows the flow chart that forms by lamination ultralow dielectric dielectric-coating structure of the present invention.
The description of contents of reference number indication in the accompanying drawing:
The copper diffusion barrier layer that 1-silicon nitride (SiN) or carborundum (SiC) constitute
The silicate glass layer of 2-fluoridize;
3-for example is the ultralow dielectric deielectric-coating of the silica (SiOC) of carbon containing;
The silicate glass layer of 4-fluoridize;
The copper bolt that 5-forms in the ultralow dielectric deielectric-coating of laminated construction is arranged.
Embodiment
Below referring to description of drawings by the structure and the formation method of ultralow dielectric deielectric-coating of the present invention.
By ultralow dielectric deielectric-coating of the present invention is stacked multilayer film, comprising: and the ultralow dielectric film of the silicate glass layer (FSG) of copper diffusion barrier layer (1), fluoridize or pure silicon silicate glass (USG) layer (2), the deposit of CVD method (hereinafter to be referred as: be that dielectric constant range for example is 1～2.5 the silicate glass layer (FSG) (4) that contains silicon oxide carbide (SiOC) film (3), fluoridize ultra Low k).
Be included on the rete that is formed with copper interconnecting line order by the formation method of ultralow dielectric deielectric-coating of the present invention and carry out following steps:
Step 1 is carried out the copper plasma treatment;
Step 2, with the copper diffusion barrier layer (1) that physical vapor deposition (for example, sputter) method constitutes with silicon nitride (SIN) or carborundum (SiC), the condition of deposit is:
Deposition conditions during the copper diffusion barrier layer (1) that constitutes with silicon nitride (SiN) is:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W
Gas: SiH
4, NH
3, N
2Or SiH
4, He, N
2
Deposition conditions during the copper diffusion barrier layer (1) that constitutes with carborundum (SiC) is:
Temperature: 300-400 ℃ pressure: 2-10Torr, radio frequency (RF) power: 50-700W
Gas: 3MS, NH
3, N
2(3MS=trimethyl silane) or 3MS, NH
3, He or 4MS, NH
3, N
2(4MS=tetramethylsilane) or 4MS, NH
3, He;
The thickness of copper diffusion barrier layer (1) is 20to 2000 ;
Step 3, with CVD (Chemical Vapor Deposition) method (CVD) deposit ultralow dielectric film (ultra Low k), the ultralow dielectric film be dielectric constant range for example be 1～2.5 contain silicon oxide carbide (SiOC) film (3), thicknesses of layers is 500 to 10um; Or form the silicate glass layer (FSG) (2) of fluoridize with spin coating method, form the rotary speed that the spin coating method of the silicate glass layer (FSG) (2) of fluoridize uses and be: 3000rpm (number of revolutions/minute); Or oxide-film (Oxide), formed thicknesses of layers scope is that 200 are to 500 .
Formed ultralow dielectric film is that dielectric constant range for example is to contain silicon oxide carbide (SiOC) film (3) below 1～2.5, also can be ultralow dielectric film (ultra Low k), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of ultralow dielectric film/fluoridize (Ultra Lowk/FSG); Or the combined films of ultralow dielectric film/oxide-film (Ultra Low k/oxide); Or the combined films of the silicate glass layer (Ultra Low k/Oxide/FSG) of the silicate glass layer/oxide-film of ultralow dielectric film/fluoridize (Ultra Low k/FSG/Oxide) or ultralow dielectric film/oxide-film/fluoridize; Or the combined films of the silicate glass layer of fluoridize/ultralow dielectric film/oxide-film (FSG/UltraLow k/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/ultralow dielectric film/(FSG/oxide/Ultra Low k); Or the combined films of the silicate glass layer of fluoridize/ultralow dielectric film (FSG/Ultra Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide); Or the combined films of the silicate glass layer of oxide-film/fluoridize/ultralow dielectric film (Oxide/FSG/Ultra Low k); Or the combined films of the silicate glass layer of oxide-film/ultralow dielectric film/fluoridize (Oxide/Ultra Lowk/FSG); Or various combined films.
The formation condition that contains silicon oxide carbide (SiOC) deielectric-coating of ultralow dielectric is:
Temperature: 300-400 ℃, pressure: 2-10Torr, low frequency radio frequency (RF) power: 50-700W, high-frequency radio frequency (RF) power: 50-700W
Gas: OMCAT (octamethylcy-clotetrasiloxane)/O
2/ He, or OMCAT/CO
2/ He, or OMCAT/NO
2/ He, or TOMCAT (tetramethyl-ring tetrasiloxane)/CO
2/ He, or TOMCAT/O
2/ He or TOMCAT/N
2O/He.
Step 4, the copper diffusion barrier layer (1) that established silicon nitride (SiN) or carborundum (SiC) constitute, with CVD (Chemical Vapor Deposition) method (CVD) deposit ultralow dielectric film or with spin coating method form fluoridize silicate glass layer (hereinafter to be referred as: FSG) (2) or oxide-film composition form reeded through hole;
Step 5 is removed part and is formed the silicate glass layer (2) of fluoridize with CVD (Chemical Vapor Deposition) method (CVD) deposit ultralow dielectric film or with spin coating method, and the thickness of the film of removing is the height of through hole, and for example 200 are to 500 .
Step 6, deposit ultralow dielectric deielectric-coating, form the silicate glass layer (4) of fluoridize on the ultralow dielectric deielectric-coating with spin coating method, the number of revolutions that spin coating method forms the silicate glass layer (4) of fluoridize is: 3000rpm (number of revolutions/minute); The thickness of the film that forms is that 3000 are to 1000 .
Step 7, deposit ultralow dielectric deielectric-coating, or, the silicate glass layer of fluoridize (4), and carry out the smooth processing of CMP, the thicknesses of layers scope of formation is that 500 are to 1000 .
The silicate glass layer of fluoridize (4) formation condition is;
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W
Gas: SiH
4, SiF
4, N
2O, N
2Or SiH4, SiF4, O
2, He, N
2
Form ultralow dielectric film with laminated construction by above step.Form in the reeded through hole at the photoetching corrosion composition then and form conductive plugs, for example the copper bolt ties the copper interconnecting line that connects the upper and lower with formed copper.
With can be in forming the photoetching corrosion composition of the conductive plugs of copper bolt for example, prevent that photoresist from damaging and can not form through hole and prevent the conductive plugs of for example copper bolt that can not be formed for interconnecting by the ultralow dielectric film that laminated construction arranged of the present invention.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the specification just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the present invention.The scope of protection of present invention is defined by appending claims and equivalent thereof.
Claims (19)
1, the ultralow dielectric film is characterized in that, the ultralow dielectric film is the stack membrane of the multilayer film formation that order forms on the rete that is formed with copper interconnecting line, and stack membrane comprises:
SiN or SiC copper diffusion barrier layer (1);
Silicate glass layer of fluoridize (FSG) or pure silicon silicate glass (USG) layer (2);
The silica of carbon containing (SiOC) ultralow dielectric deielectric-coating (3); With
The silicate glass layer of fluoridize (4);
Wherein, the silicate glass that is arranged in the fluoridize below silica (SiOC) the ultralow dielectric deielectric-coating of carbon containing can stop the amine (NHx) from following SiN or SiC copper diffusion barrier layer;
The silicate glass that is arranged in the fluoridize above silica (SiOC) the ultralow dielectric deielectric-coating of carbon containing can stop from top SiON amine (NHx) and from the amine (NHx) of copper plasma treatment, silica (SiOC) the low-k dielectric film ashing that prevents carbon containing damages, with the hardness of silica (SiOC) deielectric-coating that increases the ultralow dielectric carbon containing, be beneficial to follow-up CMP and handle.In the ultralow dielectric deielectric-coating that constitutes like this, can form the conductive plugs of the high-quality for example copper bolt that connects the upper and lower interconnection line.
2, by the ultralow dielectric film of claim 1, it is characterized in that,
The thickness of copper diffusion barrier layer (1) is 20 to, 2000 .
3, by the ultralow dielectric film of claim 1, it is characterized in that the silicate glass layer of fluoridize (2) forms with spin-coating method.
4, by the ultralow dielectric film of claim 1, it is characterized in that,
The thickness range of the silicate glass layer of fluoridize (2) is that 200 are to 500 .
5, by the ultralow dielectric film of claim 1, it is characterized in that,
Contain ultralow dielectric film (3) chemical gas-phase deposition method (CVD) deposit of silicon oxide carbide (SiOC);
6, by the ultralow dielectric film of claim 5, it is characterized in that, contain the dielectric constant range of the ultralow dielectric film (3) of silicon oxide carbide (SiOC), for example, is 1～2.5.
7, by the ultralow dielectric film of claim 5, it is characterized in that the thicknesses of layers that contains the ultralow dielectric film (3) of silicon oxide carbide (SiOC) is 500 to 10um.
8, by the ultralow dielectric film of claim 1, it is characterized in that, form the silicate glass layer (4) of fluoridize with spin-coating method.
9, by the ultralow dielectric film of claim 5, it is characterized in that the thickness range of the silicate glass layer of fluoridize (4) is that 500 are to 1000 .
10, press the ultralow dielectric film of claim 1, it is characterized in that, formed ultralow dielectric film be dielectric constant range for example be 1～2.5 contain silicon oxide carbide (SiOC) film (3) film, also can be ultralow dielectric film (ultra Low k), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of ultralow dielectric film/fluoridize (Ultra Low k/FSG); Or the combined films of ultralow dielectric film/oxide-film (UltraLow k/oxide); Or the combined films of the silicate glass layer (Ultra Low k/Oxide/FSG) of the silicate glass layer/oxide-film of ultralow dielectric film/fluoridize (Ultra Low k/FSG/Oxide) or ultralow dielectric film/oxide-film/fluoridize; Or the combined films of the silicate glass layer of fluoridize/ultralow dielectric film/oxide-film (FSG/Ultra Low k/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/ultralow dielectric film/(FSG/oxide/Ultra Low k); Or the combined films of the silicate glass layer of fluoridize/ultralow dielectric film (FSG/Ultra Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide); Or the combined films of the silicate glass layer of oxide-film/fluoridize/ultralow dielectric film (Oxide/FSG/Ultra Low k); Or the combined films of the silicate glass layer of oxide-film/ultralow dielectric film/fluoridize (Oxide/Ultra Low k/FSG); Or various combined films.
11, the manufacture method of ultralow dielectric film is characterized in that, is included in to carry out following steps on the rete that is formed with copper interconnecting line in proper order:
Step 1 is carried out the copper plasma treatment;
Step 2, the copper diffusion barrier layer (1) that deposit constitutes with silicon nitride (SIN) or carborundum (SIC), the thickness of copper diffusion barrier layer (1) is 20 to, 2000 ;
Step 3, with CVD (Chemical Vapor Deposition) method (CVD) deposit ultralow dielectric film, ultralow dielectric film dielectric constant range for example be 1～2.5 contain silicon oxide carbide (SiOC) film (3), thicknesses of layers is 500 to 10um; Or forming the silicate glass layer (2) of fluoridize with spin coating method, the rotary speed of the spin coating method of the silicate glass layer of fluoridize (2) is: 3000rpm (number of revolutions/minute); Or oxide-film; Formed thicknesses of layers scope is that 200 are to 500 ;
Step 4, the copper diffusion barrier layer (1) that established silicon nitride (SiN) or carborundum (SiC) constitute, form the silicate glass layer (2) or the oxide-film composition of fluoridize, form reeded through hole with CVD (Chemical Vapor Deposition) method (CVD) deposit film having low dielectric constant or with spin coating method;
Step 5 is removed part and is formed the silicate glass layer (2) of fluoridize with CVD (Chemical Vapor Deposition) method (CVD) deposit ultralow dielectric film or with spin coating method, and the thickness of the film of removing is the height of through hole, and for example 200 are to 500 ;
Step 6, deposit ultralow dielectric deielectric-coating, form the silicate glass layer (4) of fluoridize on the ultralow dielectric deielectric-coating with spin coating method, the number of revolutions that spin coating method forms the silicate glass layer (4) of fluoridize is: 3000rpm (number of revolutions/minute); The thickness of the film that forms is that 3000 are to 1000 ;
Step 7, deposit ultralow dielectric deielectric-coating, or, the silicate glass layer of fluoridize (4),, and carry out CMP, the thicknesses of layers scope of formation is that 500 are to 1000 ;
12, the ultralow dielectric film manufacturing method by claim 11 is characterized in that the thickness range of the silicate glass layer of fluoridize (2) is that 200 are to 500 .
13, the ultralow dielectric film manufacturing method by claim 11 is characterized in that, contains the dielectric constant range of the ultralow dielectric film (3) of silicon oxide carbide (SiOC), for example, is 1～2.5.
14, the ultralow dielectric film manufacturing method by claim 11 is characterized in that the thicknesses of layers scope that contains the ultralow dielectric film (3) of silicon oxide carbide (SiOC) is 500 to 10um.
15, the ultralow dielectric film manufacturing method by claim 11 is characterized in that the thickness range of the silicate glass layer of fluoridize (4) is that 500 are to 1000 .
16, the ultralow dielectric film manufacturing method by claim 11 is characterized in that, in the step 2, the deposition conditions that constitutes copper diffusion barrier layer (1) with silicon nitride (SiN) is:
Temperature: 300-400 ℃, pressure: 2-10Torr, RF power: 50-700W
Gas: SiH
4, NH
3, N
2Or SiH
4, He, N
2
17,, it is characterized in that in the step 2, the deposition conditions during with the copper diffusion barrier layer (1) of carborundum (SiC) formation is by the ultralow dielectric film manufacturing method of claim 11:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W gas: 3MS, NH
3, N
2(3MS=trimethyl silane; ) or 3MS, NH
3, He or 4MS, NH
3, N
2(4MS=tetramethylsilane), or 4MS, NH
3, He.
18, ultralow dielectric film manufacturing method by claim 11, it is characterized in that, formed ultralow dielectric film is a dielectric constant range, for example be: contain silicon oxide carbide (SiOC) film (3) film below 1～2.5, also can be ultralow dielectric film (Ultra Low k), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of ultralow dielectric film/fluoridize (Lowk/FSG); Or the combined films of ultralow dielectric film/oxide-film (Ultra Low k/oxide); Or the combined films of the silicate glass layer (Ultra Low k/Oxide/FSG) of the silicate glass layer/oxide-film of ultralow dielectric film/fluoridize (Ultra Low k/FSG/Oxide) or ultralow dielectric film/oxide-film/fluoridize; Or the combined films of the silicate glass layer of fluoridize/ultralow dielectric film/oxide-film (FSG/Ultra Lowk/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/ultralow dielectric film/(FSG/oxide/Ultra Low k); Or the combined films of the silicate glass layer of fluoridize/ultralow dielectric film (FSG/Ultra Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide); Or the combined films of the silicate glass layer of oxide-film/fluoridize/ultralow dielectric film (Oxide/FSG/Ultra Low k); Or the combined films of the silicate glass layer of oxide-film/ultralow dielectric film/fluoridize (Oxide/Ultra Lowk/FSG); Or various combined films.
19, the ultralow dielectric film manufacturing method by claim 11 is characterized in that the formation condition that contains silicon oxide carbide (SiOC) deielectric-coating of ultralow dielectric is:
Temperature: 300-400 ℃, pressure: 2-10Torr, low frequency radio frequency (RF) power: 50-700W, high-frequency radio frequency (RF) power: 50-700W
Gas: OMCAT (octamethylcy-clotetrasiloxane)/O2/He, or OMCAT/CO2/He, or OMCAT/NO2/He, or TOMCAT (tetramethyl-ring tetrasiloxane)/CO
2/ He, or TOMCAT/O
2/ He or TOMCAT/N
2O/He.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100256438A CN100423210C (en) | 2004-06-30 | 2004-06-30 | Super low dielectric constant film and its producing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100256438A CN100423210C (en) | 2004-06-30 | 2004-06-30 | Super low dielectric constant film and its producing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1716547A true CN1716547A (en) | 2006-01-04 |
| CN100423210C CN100423210C (en) | 2008-10-01 |
Family
ID=35822211
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100256438A Expired - Fee Related CN100423210C (en) | 2004-06-30 | 2004-06-30 | Super low dielectric constant film and its producing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100423210C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315116A (en) * | 2010-06-30 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing fluorine-doped silicon oxide thin film on wafer |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6107184A (en) * | 1998-12-09 | 2000-08-22 | Applied Materials, Inc. | Nano-porous copolymer films having low dielectric constants |
| US6596652B2 (en) * | 2001-03-06 | 2003-07-22 | United Microelectronics Corp. | Method of fabricating low dielectric constant film |
| JP4545973B2 (en) * | 2001-03-23 | 2010-09-15 | 富士通株式会社 | Silicon-based composition, low dielectric constant film, semiconductor device, and method of manufacturing low dielectric constant film |
| JP3810718B2 (en) * | 2002-08-30 | 2006-08-16 | 富士通株式会社 | Manufacturing method of semiconductor device |
-
2004
- 2004-06-30 CN CNB2004100256438A patent/CN100423210C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315116A (en) * | 2010-06-30 | 2012-01-11 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing fluorine-doped silicon oxide thin film on wafer |
| CN102315116B (en) * | 2010-06-30 | 2013-07-31 | 中芯国际集成电路制造(上海)有限公司 | Method for depositing fluorine-doped silicon oxide thin film on wafer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN100423210C (en) | 2008-10-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN1167107C (en) | Method for manufacturing low dielectric constant inter-level integrated circuit structure | |
| US6362091B1 (en) | Method for making a semiconductor device having a low-k dielectric layer | |
| CN1293622C (en) | Semiconductor device and mfg. method thereof | |
| CN2720636Y (en) | Integrated circuit | |
| CN101064251A (en) | Method for forming semiconductor structure and semiconductor structure | |
| CN1959976A (en) | Back-end metallation structure and manufacturing method thereof | |
| CN1967845A (en) | Semiconductor device and its manufacturing method | |
| CN1881558A (en) | Dual mosaic structure, interconnect structure and methods for fabricating the same | |
| CN1343372A (en) | Air gap dielectric in self-aligned via structures | |
| CN1315745A (en) | Semiconductor device and its manufacturing method | |
| CN1705076A (en) | Method of forming semiconductor parts and semiconductor parts | |
| CN1707788A (en) | Semiconductor device and method of manufacturing the same | |
| JP2006216746A (en) | Semiconductor device | |
| CN1324678C (en) | Internal dielectric layer of semiconductor, semiconductor assembly and mfg.method thereof | |
| CN1595634A (en) | Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same | |
| TW578216B (en) | Method of manufacturing low K layer | |
| CN1278409C (en) | Manufacturing method of semiconductor device and semiconductor device | |
| CN1697176A (en) | Thin film in low dielectric constant and fabricating method | |
| CN1467838A (en) | Semiconductor device having multilevel copper wiring layers and its manufacture method | |
| CN1716547A (en) | Super low dielectric constant film and its producing method | |
| CN1790661A (en) | Back end of line integration scheme | |
| CN1901156A (en) | Method for producing double embedded structure | |
| CN1315190C (en) | Semiconductor device including interconnects formed by damascene process and manufacturing method thereof | |
| CN1635636A (en) | Method and structure for combining copper with copper-insulator-copper capacitor | |
| CN1391269A (en) | Process for preventing over-etch of window in dielectric layer and its structure |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20081001 Termination date: 20180630 |