CN100388480C - Thin film in low dielectric constant and fabricating method - Google Patents
Thin film in low dielectric constant and fabricating method Download PDFInfo
- Publication number
- CN100388480C CN100388480C CNB2004100182330A CN200410018233A CN100388480C CN 100388480 C CN100388480 C CN 100388480C CN B2004100182330 A CNB2004100182330 A CN B2004100182330A CN 200410018233 A CN200410018233 A CN 200410018233A CN 100388480 C CN100388480 C CN 100388480C
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- oxide
- fluoridize
- silicate glass
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Abstract
The present invention discloses a low dielectric constant membrane and a fabrication method thereof. The low dielectric constant membrane is a laminated membrane which is formed in the method that a plurality of membranes are orderly formed on a membrane lay with copper interconnection lines, wherein the laminated membrane comprises a SiN or SiC copper diffusion impervious layer and fluoridized silicate glass. The present invention has the advantages of prevention of photoresist damage in photoetching corrosion configuration which is subsequently carried out by amine, prevention of interconnecting disconnected defects, prevention of ashing damage of a silicon oxide (SiOC) dielectric membrane containing carbon with a low dielectric constant and hardness enhancement of the silicon oxide (SiOC) dielectric membrane containing carbon with a low dielectric constant, which is beneficial to subsequent CMP processing. A high quality electric conduction pin which is used for connecting interconnecting lines of an upper layer and a lower layer can be formed in the low dielectric constant membrane of the present invention.
Description
Technical field
The present invention relates in the semiconductor device, form the low dielectric constant films and the manufacture method thereof of conduction contact embolism therein.
Background technology
Semiconductor device has sandwich construction, the conduction contact embolism by forming in the through hole realize layer with layer between be connected (with reference to the Chinese patent publication number, CN1185026A).Conduction contact bolt plug is formed in the low-k dielectric film, and therefore, low-k dielectric film is to reduce the key that interconnection line disconnects, and can reduce spuious capacity with low-k dielectric film.But the hardness of low-k dielectric film is too little, that is to say, the deielectric-coating of low-k is too soft, occurs stack membrane easily separately and problem such as through hole damage in the cmp that carries out subsequently (CMP).
Fig. 1 demonstrates the defective pattern of low-k dielectric film.Form in the lithography corrosion process that through hole carried out in low-k dielectric film, high resolution lithography glue is more responsive to the damage that amine causes.Cause amine that high resolution lithography glue damages from the barrier layer that for example constitutes with SiN or SiCN, the SiON layer, or carry out the NH that uses in the copper plasma treatment
3Damage the conductive plug that can not form the connection interconnection line in the damage district that forms owing to photoresist, causing interconnection to disconnect.
Summary of the invention
In order to overcome above-mentioned damaging, cause the defective that disconnects that interconnects to propose the present invention and in damaging the district, can not form interconnection owing to amine makes photoresist
The objective of the invention is, propose a kind of low-k dielectric film.Separate and the through hole damage with the lamination rete that can prevent from by low-k dielectric film of the present invention in the CMP that carries out subsequently handles, to cause, and the dielectric constant of the deielectric-coating of low-k does not increase.
By another object of the present invention is the formation method that proposes a kind of low-k dielectric film.Can prevent that with low-k dielectric film the lamination rete that causes from separating and through hole damages in the CMP that carries out subsequently handles, and the dielectric constant of the deielectric-coating of low-k does not increase by the inventive method manufacturing.
By film having low dielectric constant of the present invention is the stack membrane that multilayer film constitutes, and order forms copper diffusion barrier layer (1), the silicate glass layer (2) of first fluoridize, silica (SiOC) low-k dielectric film (3) of carbon containing and the silicate glass layer (4) of second fluoridize that is made of SiN or SiC on the rete that is formed with copper interconnecting line.The silicate glass (2) that is arranged in first fluoridize below silica (SiOC) low-k dielectric film (3) of carbon containing can stop the amine (NHx) from the following copper diffusion barrier layer (1) that is made of SiN or SiC.The silicate glass layer (4) that is arranged in second fluoridize above silica (SiOC) low-k dielectric film (3) of carbon containing can stop from the amine (NHx) of the SiON of the antireflecting coating of follow-up lithography step with from the amine (NHx) of copper plasma treatment, silica (SiOC) low-k dielectric film (3) ashing that prevents carbon containing damages, with the hardness of silica (SiOC) deielectric-coating (3) that increases the low-k carbon containing, be beneficial to follow-up CMP and handle.In the film having low dielectric constant of such formation, can form high-quality conduction contact embolism, for example the copper embolism that connect the upper and lower interconnection line.
Description of drawings
The accompanying drawing that comprises in the application's book demonstrates embodiments of the invention, and the accompanying drawing that comprises among the application is a component part of specification, and accompanying drawing and specification and claims one are used from explanation flesh and blood of the present invention, are used for understanding better the present invention.Same or analogous component part is indicated with identical reference number in the accompanying drawing.In the accompanying drawing:
Fig. 1 is the existing low-k dielectric film electron micrograph that wherein is formed with conductive plug;
Fig. 2 shows by the structure cutaway view that wherein is formed with the lamination film having low dielectric constant of conductive plug of the present invention;
Fig. 3 shows the flow chart that forms by lamination low-k membrane structure of the present invention.
The description of contents of reference number indication in the accompanying drawing:
The copper diffusion barrier layer that 1-silicon nitride (SiN) or carborundum (SiC) constitute;
The silicate glass layer of 2-first fluoridize;
3-for example is the low-k dielectric film of the silica (SiOC) of carbon containing;
The silicate glass layer of 4-second fluoridize;
The copper embolism that 5-forms in the low-k dielectric film of laminated construction is arranged.
Embodiment
Below referring to description of drawings by the structure and the formation method of film having low dielectric constant of the present invention.By film having low dielectric constant of the present invention is stacked multilayer film, comprising: and the silicate glass layer (FSG) (2) of copper diffusion barrier layer (1), first fluoridize, the low-k dielectric film of CVD method deposit (hereinafter to be referred as: be that dielectric constant range for example is silica (SiOC) film (3) of 2.8 to 3.5 carbon containing, the silicate glass layer (FSG) (4) of second fluoridize low K).
Be included on the rete that is formed with copper interconnecting line order by the formation method of film having low dielectric constant of the present invention and carry out following steps:
Step 1 is carried out the copper plasma treatment;
Deposition conditions during the copper diffusion barrier layer (1) that constitutes with silicon nitride (SiN) is:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W;
Gas: SiH
4, NH
3, N
2Or SiH
4, He, N
2
Deposition conditions during the copper diffusion barrier layer (1) that constitutes with carborundum (SiC) is:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W;
Gas: 3MS, NH
3, N
2(3MS=trimethyl silane) or 3MS, NH
3, He or 4MS, NH
3, N
2(4MS=tetramethylsilane) or 4MS, NH
3, He;
The thickness of copper diffusion barrier layer (1) is 20 to arrive
Formed low-k dielectric film is that dielectric constant range for example is silica (SiOC) film (3) of 2.8 to 3.5 carbon containing, also can be low-k dielectric film (low K), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of low-k dielectric film/fluoridize (Lowk/FSG); Or the combined films of low-k dielectric film/oxide-film (Low k/oxide); Or the combined films of the silicate glass layer (Low k/Oxide/FSG) of the silicate glass layer/oxide-film of low-k dielectric film/fluoridize (Low k/FSG/Oxide) or low-k dielectric film/oxide-film/fluoridize; Or the combined films of the silicate glass layer/low-k dielectric film of fluoridize/oxide-film (FSG/Low k/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/low-k dielectric film/(FSG/oxide/Low k); Or the combined films of the silicate glass layer/low-k dielectric film of fluoridize (FSG/Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSO/oxide); Or the combined films of the silicate glass layer/low-k dielectric film of oxide-film/fluoridize (oxide/FSG/Low k); Or the combined films of the silicate glass layer of oxide-film/low-k dielectric film/fluoridize (Oxide/Low k/FSG); Or various combined films.
The formation condition of the silica of the carbon containing of low-k (SiOC) deielectric-coating is:
Temperature: 300-400 ℃, pressure: 2-10Torr, low frequency radio frequency (RF) power: 50-700W, high-frequency radio frequency (RF) power: 50-700W;
Gas: OMCAT (octamethylcy-clotetrasiloxane)/O
2/ He, or
OMCAT/CO
2/ He, or OMCAT/NO
2/ He, or TOMCAT (tetramethyl-ring tetrasiloxane)/CO
2/ He, or TOMCAT/O
2/ He or TOMCAT/N
2O/He.
Step 4, the copper diffusion barrier layer (1) that constitutes at established silicon nitride (SiN) or carborundum (SiC), with CVD (Chemical Vapor Deposition) method (CVD) deposit low-k dielectric film or form with spin coating method first fluoridize silicate glass layer (hereinafter to be referred as: FSG) composition on (2) or the oxide-film forms reeded through hole;
Step 6, deposit ultralow dielectric deielectric-coating, form the silicate glass layer (4) of second fluoridize on the ultralow dielectric deielectric-coating with spin coating method, the number of revolutions that spin coating method forms the silicate glass layer (4) of second fluoridize is: 3000rpm (number of revolutions/minute); The thickness of the film that forms is
Arrive
Step 7, the silicate glass layer (4) of the deposit low-k dielectric film or second fluoridize, and carry out the smooth processing of CMP, the thicknesses of layers scope of formation is
Arrive
The silicate glass layer of second fluoridize (4) formation condition is:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W;
Gas: SiH
4, SiF
4, N
2O, N
2: or SiH
4, SiF
4, O
2, He, N
2
Form film having low dielectric constant with laminated construction by above step.Form in the reeded through hole at the photoetching corrosion composition then and form conductive plug, copper embolism for example connects the copper interconnecting line of the upper and lower with formed copper embolism.
With can be in forming the photoetching corrosion composition of the conductive plug of copper embolism for example, prevent that photoresist from damaging and can not form through hole and prevent the conductive plug of for example copper embolism that can not be formed for interconnecting by the film having low dielectric constant that laminated construction arranged of the present invention.
More than show and described basic principle of the present invention and principal character and advantage of the present invention.The technical staff of the industry should understand; the present invention is not restricted to the described embodiments; that describes in the foregoing description and the specification just illustrates principle of the present invention; the present invention also has various changes and modifications without departing from the spirit and scope of the present invention, and these changes and improvements all fall in the claimed scope of the present invention.The scope of protection of present invention is defined by appending claims and equivalent thereof.
Claims (21)
1. film having low dielectric constant is characterized in that, film having low dielectric constant is the stack membrane of the multilayer film formation that order forms on the rete that is formed with copper interconnecting line, and stack membrane comprises:
The copper diffusion barrier layer (1) that constitutes by SiN or SiC;
The silicate glass layer of first fluoridize (2);
The silica of carbon containing (SiOC) low-k dielectric film (3); With
The silicate glass layer of second fluoridize (4);
Wherein, the silicate glass layer that is arranged in first fluoridize below silica (SiOC) low-k dielectric film of carbon containing can stop the amine (NHx) from following SiN or SiC copper diffusion barrier layer;
The silicate glass layer that is arranged in second fluoridize of silica (SiOC) above the low-k dielectric film of carbon containing can stop from top SiON amine (NHx) and from the amine (NHx) of copper plasma treatment, silica (SiOC) the low-k dielectric film ashing that prevents carbon containing damages, hardness with silica (SiOC) low-k dielectric film that increases carbon containing, be beneficial to follow-up CMP and handle, in the film having low dielectric constant that constitutes like this, can form the high-quality conductive plug that connects the upper and lower interconnection line.
2. by the film having low dielectric constant of claim 1, it is characterized in that the thickness of copper diffusion barrier layer (1) is 20 to arrive
3. by the film having low dielectric constant of claim 1, it is characterized in that the silicate glass layer of first fluoridize (2) forms with spin-coating method.
4. by the film having low dielectric constant of claim 1, it is characterized in that the thickness range of the silicate glass layer of first fluoridize (2)
Arrive
5. by the film having low dielectric constant of claim 1, it is characterized in that chemical gas-phase deposition method (CVD) deposit of the low-k dielectric film (3) of the silica of carbon containing (SiOC).
6. by the film having low dielectric constant of claim 5, it is characterized in that the dielectric constant range of the low-k dielectric film (3) of the silica of carbon containing (SiOC) is 2.8 to 3.5.
7. by the film having low dielectric constant of claim 5, it is characterized in that the thicknesses of layers of the low-k dielectric film (3) of the silica of carbon containing (SiOC) is
To 10um.
8. by the film having low dielectric constant of claim 1, it is characterized in that, form the silicate glass layer (4) of second fluoridize with spin-coating method.
9. by the film having low dielectric constant of claim 5, it is characterized in that the thickness range of the silicate glass layer of second fluoridize (4) is
Arrive
10. press the film having low dielectric constant of claim 1, it is characterized in that, formed low-k dielectric film be dielectric constant range 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3), also can be film having low dielectric constant (low K), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of low-k dielectric film/fluoridize (Low k/FSG); Or the combined films of low-k dielectric film/oxide-film (Low k/oxide); Or the combined films of the silicate glass layer (Low k/Oxide/FSG) of the silicate glass layer/oxide-film of low-k dielectric film/fluoridize (Low k/FSG/Oxide) or low-k dielectric film/oxide-film/fluoridize; Or the combined films of the silicate glass layer/low-k dielectric film of fluoridize/oxide-film (FSG/Low k/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/low-k dielectric film/(FSG/oxide/Low k); Or the combined films of the silicate glass layer/low-k dielectric film of fluoridize (FSG/Low k); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide): or the combined films of the silicate glass layer/low-k dielectric film of oxide-film/fluoridize (Oxide/FSG/Low k); Or the combined films of the silicate glass layer of oxide-film/low-k dielectric film/fluoridize (Oxide/Low k/FSG).
11. the film having low dielectric constant by claim 1 is characterized in that described conductive plug is the copper embolism.
12. the manufacture method of film having low dielectric constant is characterized in that, is included in to carry out following steps on the rete that is formed with copper interconnecting line in proper order:
Step 1 is carried out the copper plasma treatment;
Step 2, the copper diffusion barrier layer (1) that deposit constitutes with silicon nitride (SIN) or carborundum (SIC), the thickness of copper diffusion barrier layer (1) are 20 to arrive
Step 3, with CVD (Chemical Vapor Deposition) method (CVD) deposit low-k dielectric film, the low-k dielectric film dielectric constant range be 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3), thicknesses of layers is
To 10um; Or forming the silicate glass layer (2) of first fluoridize with spin coating method, the rotary speed of the spin coating method of the silicate glass layer of first fluoridize (2) is: 3000rpm (number of revolutions/minute); Or oxide-film; Formed thicknesses of layers scope is
Arrive
Step 4, composition at copper diffusion barrier layer (1) that established silicon nitride (SiN) or carborundum (SiC) constitute, with the silicate glass layer (2) of the low-k dielectric film of CVD (Chemical Vapor Deposition) method (CVD) deposit or first fluoridize that forms with spin coating method or oxide-film forms reeded through hole;
Step 5 is removed the silicate glass layer (2) of first fluoridize that part forms with the low-k dielectric film of CVD (Chemical Vapor Deposition) method (CVD) deposit or with spin coating method, and the thickness of the film of removing is the height of through hole;
Step 6, deposit ultralow dielectric deielectric-coating, form the silicate glass layer (4) of second fluoridize on the ultralow dielectric deielectric-coating with spin coating method, the number of revolutions that spin coating method forms the silicate glass layer (4) of second fluoridize is: 3000rpm (number of revolutions/minute); The thickness of the film that forms is
Arrive
Step 7, the silicate glass layer (4) of the deposit low-k dielectric film or second fluoridize, and carry out CMP, the thicknesses of layers scope of formation is
Arrive
13. the low-k film manufacturing method by claim 12 is characterized in that the thickness range of the silicate glass layer of first fluoridize (2) is
Arrive
14. the low-k film manufacturing method by claim 12 is characterized in that the dielectric constant range that contains silicon oxide carbide (SiOC) film (3) is 2.8 to 3.5.
15. the low-k film manufacturing method by claim 12 is characterized in that the thicknesses of layers scope that contains silicon oxide carbide (SiOC) film (3) is
To 10um.
16. the low-k film manufacturing method by claim 12 is characterized in that the thickness range of the silicate glass layer of second fluoridize (4) is
Arrive
17. the low-k film manufacturing method by claim 12 is characterized in that in the step 2, the deposition conditions that constitutes copper diffusion barrier layer (1) with silicon nitride is:
Temperature: 300-400 ℃, pressure: 2-10Torr, RF power: 50-700W;
Gas: SiH
4, NH
3, N
2Or SiH
4, He, N
2
18., it is characterized in that in the step 2, the deposition conditions during with the copper diffusion barrier layer (1) of carborundum (SiC) formation is by the low-k film manufacturing method of claim 12:
Temperature: 300-400 ℃, pressure: 2-10Torr, radio frequency (RF) power: 50-700W;
Gas: 3MS, NH
3, N
2(3MS=trimethyl silane; ) or 3MS, NH
3, He or 4MS, NH
3, N
2(4MS=tetramethylsilane), or 4MS, NH
3, He.
19. low-k film manufacturing method by claim 12, it is characterized in that, formed low-k dielectric film be dielectric constant range 2.8 to 3.5 contain silicon oxide carbide (SiOC) film (3), also can be low-k dielectric film (low K), or the silicate glass layer of fluoridize (FSG), or oxide-film (Oxide); Or the combined films of the silicate glass layer of low-k dielectric film/fluoridize (Low k/FSG); Or the combined films of low-k dielectric film/oxide-film (Low k/oxide); Or the combined films of the silicate glass layer of the silicate glass layer/oxide-film of low-k dielectric film/fluoridize (Lowk/FSG/Oxide) or low-k dielectric film/oxide-film/fluoridize (Low k/Oxide/FSG); Or the combined films of the silicate glass layer/low-k dielectric film of fluoridize/oxide-film (FSG/Low k/Oxide); Or the combined films of the silicate glass layer/oxide-film of fluoridize/low-k dielectric film/(FSG/oxide/Low k); Or the combined films of the silicate glass layer/low-k dielectric film of fluoridize (FSG/Lowk); Or the combined films of the silicate glass layer/oxide-film of fluoridize (FSG/oxide); Or the combined films of the silicate glass layer/low-k dielectric film of oxide-film/fluoridize (Oxide/FSG/Low k); Or the silicate glass layer of oxide-film/low-k dielectric film/fluoridize (Oxide/Low k/FSG).
20. the low-k film manufacturing method by claim 12 is characterized in that the formation condition that contains silicon oxide carbide (SiOC) film is:
Temperature: 300-400 ℃, pressure: 2-10Torr, low frequency radio frequency (RF) power: 50-700W, high-frequency radio frequency (RF) power: 50-700W;
Gas: OMCAT (octamethylcy-clotetrasiloxane)/O
2/ He, or
OMCAT/CO
2/ He, or OMCAT/NO
2/ He, or TOMCAT (tetramethyl-ring tetrasiloxane)/CO
2/ He, or TOMCAT/O
2/ He or TOMCAT/N
2O/He.
21. the low-k film manufacturing method by claim 12 is characterized in that the thickness of the film of removing in the step 5 is
Arrive
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100182330A CN100388480C (en) | 2004-05-11 | 2004-05-11 | Thin film in low dielectric constant and fabricating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2004100182330A CN100388480C (en) | 2004-05-11 | 2004-05-11 | Thin film in low dielectric constant and fabricating method |
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|---|---|
| CN1697176A CN1697176A (en) | 2005-11-16 |
| CN100388480C true CN100388480C (en) | 2008-05-14 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100459064C (en) * | 2005-12-12 | 2009-02-04 | 中芯国际集成电路制造(上海)有限公司 | Method for improving adhesive strength of low-dielectric constant layer |
| CN102412196A (en) * | 2011-09-15 | 2012-04-11 | 上海华力微电子有限公司 | Fabrication method for copper Damascus interconnected structure |
| CN103531527B (en) * | 2012-07-03 | 2016-07-06 | 中芯国际集成电路制造(上海)有限公司 | The manufacture method of metal interconnection structure |
| CN108389782B (en) * | 2018-03-06 | 2020-02-25 | 江苏欧特电子科技有限公司 | Method for forming ultra-low K dielectric layer |
| CN109119339B (en) * | 2018-08-26 | 2022-02-08 | 合肥安德科铭半导体科技有限公司 | SiCO spacer layer material with low dielectric constant and preparation method and application thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308372A (en) * | 2000-02-10 | 2001-08-15 | 国际商业机器公司 | Breakdown barrier and oxygen barrier for integrated circuit of low dielectric constant dielectric |
| CN1310471A (en) * | 2000-02-22 | 2001-08-29 | 国际商业机器公司 | Method for forming double-layer low-dielectric barrier-layer using for interconnection and its forming apparatus |
| JP2003017490A (en) * | 2001-07-02 | 2003-01-17 | Semiconductor Leading Edge Technologies Inc | Method of forming insulation film and semiconductor device |
| US6664177B1 (en) * | 2002-02-01 | 2003-12-16 | Taiwan Semiconductor Manufacturing Company | Dielectric ARC scheme to improve photo window in dual damascene process |
-
2004
- 2004-05-11 CN CNB2004100182330A patent/CN100388480C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1308372A (en) * | 2000-02-10 | 2001-08-15 | 国际商业机器公司 | Breakdown barrier and oxygen barrier for integrated circuit of low dielectric constant dielectric |
| CN1310471A (en) * | 2000-02-22 | 2001-08-29 | 国际商业机器公司 | Method for forming double-layer low-dielectric barrier-layer using for interconnection and its forming apparatus |
| JP2003017490A (en) * | 2001-07-02 | 2003-01-17 | Semiconductor Leading Edge Technologies Inc | Method of forming insulation film and semiconductor device |
| US6664177B1 (en) * | 2002-02-01 | 2003-12-16 | Taiwan Semiconductor Manufacturing Company | Dielectric ARC scheme to improve photo window in dual damascene process |
Non-Patent Citations (1)
| Title |
|---|
| US6664177B! 2003.12.16 |
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| CN1697176A (en) | 2005-11-16 |
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