CN1685528A - 分子光发射器件 - Google Patents
分子光发射器件 Download PDFInfo
- Publication number
- CN1685528A CN1685528A CNA03822903XA CN03822903A CN1685528A CN 1685528 A CN1685528 A CN 1685528A CN A03822903X A CNA03822903X A CN A03822903XA CN 03822903 A CN03822903 A CN 03822903A CN 1685528 A CN1685528 A CN 1685528A
- Authority
- CN
- China
- Prior art keywords
- molecule
- raceway groove
- light
- tube
- source electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002071 nanotube Substances 0.000 claims description 31
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 27
- 239000002041 carbon nanotube Substances 0.000 claims description 27
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 27
- 230000005284 excitation Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 239000000758 substrate Substances 0.000 claims description 15
- 238000002347 injection Methods 0.000 claims description 13
- 239000007924 injection Substances 0.000 claims description 13
- 229910052582 BN Inorganic materials 0.000 claims description 9
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 9
- 150000001875 compounds Chemical class 0.000 claims description 6
- 230000005669 field effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 claims description 6
- 239000002131 composite material Substances 0.000 claims description 4
- 239000002109 single walled nanotube Substances 0.000 claims description 4
- 238000001228 spectrum Methods 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000006698 induction Effects 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- KZMAWJRXKGLWGS-UHFFFAOYSA-N 2-chloro-n-[4-(4-methoxyphenyl)-1,3-thiazol-2-yl]-n-(3-methoxypropyl)acetamide Chemical compound S1C(N(C(=O)CCl)CCCOC)=NC(C=2C=CC(OC)=CC=2)=C1 KZMAWJRXKGLWGS-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000011591 potassium Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/70—Nanostructure
- Y10S977/734—Fullerenes, i.e. graphene-based structures, such as nanohorns, nanococoons, nanoscrolls or fullerene-like structures, e.g. WS2 or MoS2 chalcogenide nanotubes, planar C3N4, etc.
- Y10S977/742—Carbon nanotubes, CNTs
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/936—Specified use of nanostructure for electronic or optoelectronic application in a transistor or 3-terminal device
- Y10S977/938—Field effect transistors, FETS, with nanowire- or nanotube-channel region
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S977/00—Nanotechnology
- Y10S977/902—Specified use of nanostructure
- Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
- Y10S977/949—Radiation emitter using nanostructure
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mathematical Physics (AREA)
- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Cold Cathode And The Manufacture (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Carbon And Carbon Compounds (AREA)
Abstract
本发明涉及分子光发射器件,其中的光发射器件包括:栅电极(101);沟道(103),所述沟道(103)包括用于电激励光发射的分子,其中,该分子布置在栅电极(101)的有效范围内;耦合到沟道第一端的源极(104),所述源极向沟道内注射电子;以及耦合到沟道第二端的漏极(105),所述漏极向沟道内注射空穴。
Description
技术领域
本发明涉及光发射器件(LED),并更具体地涉及碳纳米管LED。
背景技术
相当长的时间,经济促进在晶片上集成光子结构。然而,为了充分利用近来在构造光子带隙结构方面的进步所提供的唯一机会的优点,需要当用电流以及光激励驱动时能进行光发射的纳米级器件。基于硅的常规半导体光子结构需要集成直接带隙材料或多微孔硅以提供光子源,直接带隙材料或多微孔硅都与强大的技术挑战有关,并且已经投入实际应用。
从而,对能进行电子感应光发射的分子级器件还存在需求,其中,该器件可与硅技术兼容。
发明内容
根据本发明的实施例,光发射器件包括:栅电极;沟道,所述沟道包括用于电激励光发射的分子,其中,该分子布置在栅电极的有效范围内;耦合到沟道第一端的源极,所述源极向沟道内注射电子;以及耦合到沟道第二端的漏极,所述漏极向沟道内注射空穴。
所述分子是碳纳米管和氮化硼纳米管中的一种。
栅电极在基板内形成。栅电极是基板。
所述分子基本上是双极性的。所述分子是整流碳纳米管。所述分子是单壁纳米管和多壁纳米管中的一种。
电荷密度大约在108安/cm2与109安/cm2之间。漏极电压大约是栅电压的两倍,并且,源极接近接地电势。
所述分子基本是不掺杂的。所述分子的第一端是n掺杂的。
沟道包括布置在基板上的一个分子,所述分子用于电激励光发射。沟道包括布置在基板上的至少两个分子,所述分子用于电激励光发射。
根据本发明的实施例,一种产生光的方法包括提供场效应晶体管,该晶体管包括源极、漏极、栅极和沟道,所述沟道包括用于电激励光发射的分子,所述分子具有适于产生所需波长光的直径。所述方法进一步包括:以栅电压向栅极加偏压;通过施加源极与漏极之间的电压而对沟道正向偏压;以及,复合电子和空穴,其中,该复合产生所需波长的光。
沟道是碳纳米管和氮化硼纳米管中的一种。
栅电压和施加到漏极上的电压在沟道的两端上产生适于从沟道导致光发射的电荷密度。
所需波长的光是包括红外光和可见光的一部分光谱。
所述方法包括用n掺杂物掺杂沟道第一部分的步骤,其中,沟道第一部分接近源极。
沟道包括布置在基板上的一个分子,所述分子用于电激励光发射。沟道包括布置在基板上的至少两个分子,所述分子用于电激励光发射。
一种光发射器件包括:沟道,所述沟道包括用于电激励光发射的分子,其中,该分子包括形成分子内p-n结的n型部分和p型部分;
耦合到分子的p型部分的源极,所述源极向分子内注射电子;以及,耦合到分子的n型部分的漏极,所述漏极向分子内注射空穴。
所述分子是碳纳米管和氮化硼纳米管中的一种。
所述分子被正向偏压。所述分子为本征p型,并且,分子的一端被化学n掺杂以形成n型部分。
根据本发明的实施例,一种用于产生光的方法包括提供二端子器件,所述二端子器件包括源极、漏极和沟道,所述沟道包括用于电激励光发射的分子,其中,所述分子包括在分子内形成p-n结的n型部分和p型部分,其中,所述分子具有适于产生所需波长光的直径。所述方法进一步包括:通过施加源极与漏极之间的电压而对分子正向偏压,其中,源极耦合到p型部分,并且漏极耦合到n型部分;以及,复合电子和空穴,其中,所述复合产生所需波长的光。
所述分子是碳纳米管和氮化硼纳米管中的一种。
附图说明
以下结合附图更详细地描述本发明的优选实施例,在附图中:
图1A示出根据本发明实施例的分子光发射器件;
图1B示出根据本发明实施例的分子光发射器件;
图2示出根据本发明实施例的分子光发射器件;
图3示出根据本发明实施例的纳米管;
图4为示出根据本发明实施例的漏极电流-漏极电压图形;以及
图5为根据本发明实施例的方法的流程图。
具体实施方式
根据本发明的实施例,具有感应正向偏压p-n结的场效应单分子器件能进行电感应光发射。此发射可来自单个1-d分子,如碳纳米管或氮化硼纳米管,所述单分子为电加压光发射器件提供高定标。
参照图1A,器件包括栅电极101,如硅基板。栅电极可在基板内形成,或者栅电极可以是图1B所示的基板。器件进一步包括栅极氧化物102,如二氧化硅层或氧化铝层,在栅极氧化物102上淀积碳纳米管103。碳纳米管103在栅电极101的有效范围内,从而,栅电极可电激励碳纳米管103,以产生例如100nm的光发射。碳纳米管103例如为单壁碳纳米管,所述单壁碳纳米管具有赋予半导体特性的空间螺旋特性。也可实现多于一个的碳纳米管。源极104和漏极105在碳纳米管103的相反端上形成。可在器件上淀积诸如二氧化硅的帽子106。
碳纳米管分子可以是单壁或多壁的。多壁纳米管具有一系列的同心纳米管圆柱体。根据空间螺旋特性(即,构造几何),单壁和多壁纳米管可以是金属或半导体。金属纳米管可承载大电流密度,并且电阻率恒定。半导体纳米管可作为场效应晶体管(FET)进行电开启和关闭。可共价结合两种类型(共享电子)。
通过正向偏压p-n结,可从基于分子系统的碳纳米管实现光发射,在正向偏压p-n结中,在空间电荷区上注射空穴和电子。与在常规直接带隙半导体光发射二极管中一样,在空间电荷区中复合多余的电子和空穴可导致发射光子。然而,与以前涉及聚合物或有机膜和晶体的文献相反,根据本发明的实施例,p和n区是单分子的相反端。
参照图2,通过选择掺杂,可在单分子中创建p和n区。例如,本征p型的碳纳米管分子103可放置在源电极104与漏电极105之间。使用平版印刷术,例如包括电子束平版印刷术,对分子的一端进行掩膜201。接着可对暴露端进行掺杂。例如,通过钾掺杂,对本征p型的分子的暴露端进行掺杂,在暴露区中创建n型区。因而,在分子内创建p-n结,接着对分子正向偏压,以产生复合辐射。
根据本发明的实施例,基于纳米管的光发射器件可以是二端子p-n器件或三端子器件。参照图2,可形成包括源极104和漏极105的二端子p-n器件,其中,纳米管103被化学掺杂。二端子器件不包括栅极,因而,可使用化学掺杂的纳米管来产生p-n结。为了产生光,在分子103两端施加偏压,其中,负端耦合到分子的n型端,正端耦合到分子的p型端。三端子器件包括源极104、漏极105和栅极101,并且,分子103可不被化学掺杂,或者可被化学掺杂为扩增场掺杂。
参照图3,在场效应结构的漏极301与源极302之间放置证明双极性的单分子300。接着,用漏极301与源极302电压之间的栅电压值对此结构加偏压。栅极场允许在纳米管的一端注射空穴,并因而表现为p掺杂,可替换地,允许在纳米管的另一端注射电子,并因而表现为n掺杂。由于栅极场在分子两端的相反符号,分子的一侧为p掺杂(h+),分子的另一侧为n掺杂(e-)。由于p掺杂区在具有更高电压的一侧,因此,在分子中创建的p-n结被正向偏压。以此方式,在单分子中创建正向偏压的p-n结,以实现由电流产生的复合辐射(hv)。在如图3所示的p和n区的区域中,沿着纳米管主体发生复合辐射。
使用碳纳米管构造原型光发射器件。此实例使用上述第一实施例。原型器件包括场效应结构的单个碳纳米管(例如参见图1A-1B)。此器件证明具有双极导电性。
器件端子的电压可用氧化物的厚度来换算。对于源电压接近0(例如,±1/2伏),漏极电压是栅电压的两倍。例如,对于100nm厚的栅极厚度,通过使源极接地,固定栅极为+5伏,并在漏极上加+10伏偏压,已经观察到光发射。电荷密度可在108安/cm2与109安/cm2之间,然而,这可随着器件参数和几何形状而变化。本领域中技术人员应理解,根据本发明内容,器件的工作电压取决于器件参数和几何形状。例如,更薄的栅极氧化物意味着更低的栅电压操作。在源极附近,由于场效应掺杂,纳米管是n掺杂的。对于纳米管靠近漏极的相反场,在此区域中纳米管是p掺杂的。在图4中,对于+5伏的栅电压且源极接地,在0至+10伏的范围内,漏极电流被描绘成漏极电压的函数。
当以正向偏压结模式工作时,从器件观察到光发射。从碳纳米管的小带隙可预料,该发射在红外线范围内。由于半导体纳米管的带隙换算为1/d,其中,d是管的直径,因此,可在从红外光到可见光的范围内调整器件的发射。
参照图5,一种产生光的方法包括提供场效应晶体管,该晶体管包括源极、漏极、栅极和碳纳米管沟道,所述碳纳米管沟道具有适于产生所需波长光的直径501。栅极可加大约+5伏的偏压502,而且,通过向漏极施加大约+10伏的电压,碳纳米管沟道可被正向偏压503。电子和空穴的复合产生所需波长的光504。纳米管可用于产生光,根据纳米管的直径,所产生光的一部分光谱包括红外光和可见光。
此器件的优点是允许从单分子观察到电感应光发射。而且,由于肖特基势垒较薄,因此,注射到此分子器件中的载流子非常有效,其中,肖特基势垒较薄是因纳米管中的一维静电效应而引起的,例如,即使对于放置在中间间隙的费米能级触点,触点处的隧道效应比率也较高。在此一维系统中纳米管肖特基势垒的特性不太多限制电流,并获得高注射率,这有利于更高的发射效率。从而,此触点方案不需要特殊设计的非对称注射的触点,此非对称注射在光子源的情形中比较普遍。
已经描述能进行电感应光发射的分子级器件的优选实施例,应指出,根据以上论述,本领域中技术人员可作出变更和变化。从而,应该理解,只要在后附权利要求所定义的本发明范围和精神内,可对本发明所公布的特定实施例作出改变。因而,已经结合专利法所要求的细节和特性而描述本发明,其中,希望专利特权许证保护的内容在后附权利要求中提出。
Claims (26)
1.一种光发射器件,包括:
栅电极;
沟道,所述沟道包括用于电激励光发射的分子,其中,该分子布置在栅电极的有效范围内;
耦合到沟道第一端的源极,所述源极向沟道内注射电子;以及
耦合到沟道第二端的漏极,所述漏极向沟道内注射空穴。
2.如权利要求1所述的器件,其中,所述分子是碳纳米管和氮化硼纳米管中的一种。
3.如权利要求1所述的器件,其中,栅电极在基板内形成。
4.如权利要求1所述的器件,其中,栅电极是基板。
5.如权利要求1所述的器件,其中,所述分子基本上是双极性的。
6.如权利要求1所述的器件,其中,所述分子是整流碳纳米管。
7.如权利要求1所述的器件,其中,所述分子是单壁纳米管和多壁纳米管中的一种。
8.如权利要求1所述的器件,其中,电荷密度大约在108安/cm2与109安/cm2之间。
9.如权利要求1所述的器件,其中,漏极电压大约是栅电压的两倍,并且,源极接近接地电势。
10.如权利要求1所述的器件,其中,所述分子基本是不掺杂的。
11.如权利要求1所述的器件,其中,所述分子的第一端是n掺杂的。
12.如权利要求1所述的器件,其中,沟道包括布置在基板上的一个分子,所述分子用于电激励光发射。
13.如权利要求1所述的器件,其中,沟道包括布置在基板上的至少两个分子,所述分子用于电激励光发射。
14.一种用于产生光的方法,包括以下步骤:
提供场效应晶体管,该晶体管包括源极、漏极、栅极和沟道,所述沟道包括用于电激励光发射的分子,所述分子具有适于产生所需波长光的直径;
以栅电压向栅极加偏压;
通过施加源极与漏极之间的电压而对沟道正向偏压;以及
复合电子和空穴,其中,该复合产生所需波长的光。
15.如权利要求14所述的方法,其中,沟道是碳纳米管和氮化硼纳米管中的一种。
16.如权利要求14所述的方法,其中,栅电压和施加到漏极上的电压在沟道的两端上产生适于从沟道导致光发射的电荷密度。
17.如权利要求14所述的方法,其中,所需波长的光是包括红外光和可见光的一部分光谱。
18.如权利要求14所述的方法,进一步包括用n掺杂物掺杂沟道第一部分的步骤,其中,沟道第一部分接近源极。
19.如权利要求14所述的方法,其中,沟道包括布置在基板上的一个分子,所述分子用于电激励光发射。
20.如权利要求14所述的方法,其中,沟道包括布置在基板上的至少两个分子,所述分子用于电激励光发射。
21.一种光发射器件,包括:
沟道,所述沟道包括用于电激励光发射的分子,其中,该分子包括形成分子内p-n结的n型部分和p型部分;
耦合到分子的p型部分的源极,所述源极向分子内注射电子;以及
耦合到分子的n型部分的漏极,所述漏极向分子内注射空穴。
22.如权利要求21所述的器件,其中,所述分子是碳纳米管和氮化硼纳米管中的一种。
23.如权利要求21所述的器件,其中,所述分子被正向偏压。
24.如权利要求21所述的器件,其中,所述分子为本征p型,并且,分子的一端被化学n掺杂以形成n型部分。
25.一种用于产生光的方法,包括以下步骤:
提供二端子器件,所述二端子器件包括源极、漏极和沟道,所述沟道包括用于电激励光发射的分子,其中,所述分子包括在分子内形成p-n结的n型部分和p型部分,其中,所述分子具有适于产生所需波长光的直径;
通过施加源极与漏极之间的电压而对分子正向偏压,其中,源极耦合到p型部分,并且漏极耦合到n型部分;以及
复合电子和空穴,其中,所述复合产生所需波长的光。
26.如权利要求25所述的方法,其中,所述分子是碳纳米管和氮化硼纳米管中的一种。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/255,351 | 2002-09-26 | ||
US10/255,351 US7115916B2 (en) | 2002-09-26 | 2002-09-26 | System and method for molecular optical emission |
Publications (1)
Publication Number | Publication Date |
---|---|
CN1685528A true CN1685528A (zh) | 2005-10-19 |
Family
ID=32029101
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA03822903XA Pending CN1685528A (zh) | 2002-09-26 | 2003-09-26 | 分子光发射器件 |
Country Status (10)
Country | Link |
---|---|
US (1) | US7115916B2 (zh) |
EP (1) | EP1547165A4 (zh) |
JP (1) | JP2006501654A (zh) |
KR (1) | KR100646719B1 (zh) |
CN (1) | CN1685528A (zh) |
AU (1) | AU2003279724A1 (zh) |
IL (1) | IL167667A (zh) |
MX (1) | MXPA05003154A (zh) |
TW (1) | TWI284912B (zh) |
WO (1) | WO2004030043A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103227257A (zh) * | 2013-04-12 | 2013-07-31 | 中国科学院物理研究所 | 电光转换元件及其应用 |
CN103518255A (zh) * | 2011-05-10 | 2014-01-15 | 国际商业机器公司 | 具有减小寄生电阻的带电单层的碳场效应晶体管 |
Families Citing this family (62)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU2003215253A1 (en) | 2002-02-19 | 2003-09-09 | Rensselaer Polytechnic Institute | Method of transforming carbon nanotubes |
US6872645B2 (en) * | 2002-04-02 | 2005-03-29 | Nanosys, Inc. | Methods of positioning and/or orienting nanostructures |
CA2499965C (en) * | 2002-09-30 | 2013-03-19 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7135728B2 (en) * | 2002-09-30 | 2006-11-14 | Nanosys, Inc. | Large-area nanoenabled macroelectronic substrates and uses therefor |
US7067867B2 (en) * | 2002-09-30 | 2006-06-27 | Nanosys, Inc. | Large-area nonenabled macroelectronic substrates and uses therefor |
US7619562B2 (en) * | 2002-09-30 | 2009-11-17 | Nanosys, Inc. | Phased array systems |
CA2499944A1 (en) * | 2002-09-30 | 2004-04-15 | Nanosys, Inc. | Integrated displays using nanowire transistors |
US7051945B2 (en) * | 2002-09-30 | 2006-05-30 | Nanosys, Inc | Applications of nano-enabled large area macroelectronic substrates incorporating nanowires and nanowire composites |
EP2237340A3 (en) | 2003-03-28 | 2010-12-08 | Michele Muccini | Organic electroluminescence devices |
US20060261329A1 (en) * | 2004-03-24 | 2006-11-23 | Michele Muccini | Organic electroluminescence devices |
JP4627188B2 (ja) * | 2003-05-22 | 2011-02-09 | 富士通株式会社 | 電界効果トランジスタ及びその製造方法 |
US7329902B2 (en) * | 2003-06-11 | 2008-02-12 | Stmicroelectronics S.R.L. | IR-light emitters based on SWNT's (single walled carbon nanotubes), semiconducting SWNTs-light emitting diodes and lasers |
US7378715B2 (en) * | 2003-10-10 | 2008-05-27 | General Electric Company | Free-standing electrostatically-doped carbon nanotube device |
WO2005065327A2 (en) * | 2003-12-31 | 2005-07-21 | Pettit John W | Wavelength division multiplexing using carbon nanotubes |
GB0400997D0 (en) * | 2004-01-16 | 2004-02-18 | Univ Cambridge Tech | N-channel transistor |
US7553371B2 (en) * | 2004-02-02 | 2009-06-30 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US20110039690A1 (en) * | 2004-02-02 | 2011-02-17 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US8025960B2 (en) * | 2004-02-02 | 2011-09-27 | Nanosys, Inc. | Porous substrates, articles, systems and compositions comprising nanofibers and methods of their use and production |
US7115971B2 (en) | 2004-03-23 | 2006-10-03 | Nanosys, Inc. | Nanowire varactor diode and methods of making same |
AU2005251089A1 (en) * | 2004-04-30 | 2005-12-15 | Nanosys, Inc. | Systems and methods for nanowire growth and harvesting |
US20050279274A1 (en) * | 2004-04-30 | 2005-12-22 | Chunming Niu | Systems and methods for nanowire growth and manufacturing |
US7785922B2 (en) | 2004-04-30 | 2010-08-31 | Nanosys, Inc. | Methods for oriented growth of nanowires on patterned substrates |
US7180107B2 (en) | 2004-05-25 | 2007-02-20 | International Business Machines Corporation | Method of fabricating a tunneling nanotube field effect transistor |
US7339184B2 (en) * | 2004-07-07 | 2008-03-04 | Nanosys, Inc | Systems and methods for harvesting and integrating nanowires |
JP3751016B2 (ja) * | 2004-07-16 | 2006-03-01 | 国立大学法人 東京大学 | カーボンナノチューブ分散膜及び発光体 |
GB0415891D0 (en) * | 2004-07-16 | 2004-08-18 | Koninkl Philips Electronics Nv | Nanoscale fet |
KR101025846B1 (ko) * | 2004-09-13 | 2011-03-30 | 삼성전자주식회사 | 탄소나노튜브 채널을 포함하는 반도체 장치의 트랜지스터 |
KR100601965B1 (ko) * | 2004-10-02 | 2006-07-18 | 삼성전자주식회사 | n형 탄소 나노튜브를 구비한 n형 탄소나노튜브 전계효과트랜지스터 및 그 제조방법 |
JP2008515654A (ja) * | 2004-10-12 | 2008-05-15 | ナノシス・インク. | 導電性ポリマー及び半導体ナノワイヤに基づいてプラスチック電子部品を製造するための完全に集積化された有機層プロセス |
US7473943B2 (en) * | 2004-10-15 | 2009-01-06 | Nanosys, Inc. | Gate configuration for nanowire electronic devices |
EP1820210A4 (en) | 2004-11-24 | 2014-03-05 | Nanosys Inc | CONTACT DOPING AND NANOFIL THIN FILM RECOVERY SYSTEMS AND PROCESSES |
US7560366B1 (en) | 2004-12-02 | 2009-07-14 | Nanosys, Inc. | Nanowire horizontal growth and substrate removal |
US8548415B2 (en) | 2004-12-16 | 2013-10-01 | Northrop Grumman Systems Corporation | Carbon nanotube devices and method of fabricating the same |
AU2006252815A1 (en) * | 2005-06-02 | 2006-12-07 | Nanosys, Inc. | Light emitting nanowires for macroelectronics |
US7687841B2 (en) * | 2005-08-02 | 2010-03-30 | Micron Technology, Inc. | Scalable high performance carbon nanotube field effect transistor |
WO2007038164A2 (en) * | 2005-09-23 | 2007-04-05 | Nanosys, Inc. | Methods for nanostructure doping |
US7741197B1 (en) | 2005-12-29 | 2010-06-22 | Nanosys, Inc. | Systems and methods for harvesting and reducing contamination in nanowires |
KR101287350B1 (ko) * | 2005-12-29 | 2013-07-23 | 나노시스, 인크. | 패터닝된 기판 상의 나노와이어의 배향된 성장을 위한 방법 |
WO2008057558A2 (en) * | 2006-11-07 | 2008-05-15 | Nanosys, Inc. | Systems and methods for nanowire growth |
US7786024B2 (en) * | 2006-11-29 | 2010-08-31 | Nanosys, Inc. | Selective processing of semiconductor nanowires by polarized visible radiation |
JP5465825B2 (ja) * | 2007-03-26 | 2014-04-09 | 出光興産株式会社 | 半導体装置、半導体装置の製造方法及び表示装置 |
KR101443215B1 (ko) * | 2007-06-13 | 2014-09-24 | 삼성전자주식회사 | 앰비폴라 물질을 이용한 전계효과 트랜지스터 및 논리회로 |
KR100857542B1 (ko) * | 2007-07-19 | 2008-09-08 | 삼성전자주식회사 | 탄소 나노튜브 발광소자 및 그 제조방법 |
KR100868940B1 (ko) * | 2007-07-20 | 2008-11-17 | 황장환 | 도핑된 탄소 나노 튜브를 이용한 유기 발광 디스플레이소자 및 그의 제조 방법 |
KR100868941B1 (ko) * | 2007-07-20 | 2008-11-17 | 황장환 | 무촉매 탄소 나노 튜브를 이용한 유기 발광 디스플레이소자 및 그의 제조 방법 |
CA2702851A1 (en) * | 2007-09-10 | 2009-03-19 | University Of Florida Research Foundation, Inc. | Nanotube enabled, gate-voltage controlled light emitting diodes |
US8043978B2 (en) * | 2007-10-11 | 2011-10-25 | Riken | Electronic device and method for producing electronic device |
KR100924489B1 (ko) * | 2007-12-17 | 2009-11-03 | 한국전자통신연구원 | 탄소나노튜브를 이용한 투명 전자 소자 및 그 제조 방법 |
ES2867474T3 (es) | 2009-05-19 | 2021-10-20 | Oned Mat Inc | Materiales nanoestructurados para aplicaciones de batería |
US8623288B1 (en) | 2009-06-29 | 2014-01-07 | Nanosys, Inc. | Apparatus and methods for high density nanowire growth |
KR101813179B1 (ko) * | 2011-06-10 | 2017-12-29 | 삼성전자주식회사 | 복층의 게이트 절연층을 구비한 그래핀 전자 소자 |
US8916405B2 (en) | 2011-10-11 | 2014-12-23 | International Business Machines Corporation | Light emitting diode (LED) using carbon materials |
US10089930B2 (en) | 2012-11-05 | 2018-10-02 | University Of Florida Research Foundation, Incorporated | Brightness compensation in a display |
CN102945905A (zh) * | 2012-11-28 | 2013-02-27 | 中国科学院物理研究所 | 基于硼碳氮纳米管的可见光发光二极管 |
US9048216B2 (en) * | 2013-04-17 | 2015-06-02 | International Business Machines Corporation | Self aligned embedded gate carbon transistors |
DE102013221758B4 (de) | 2013-10-25 | 2019-05-23 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Vorrichtungen zur aussendung und/oder zum empfang elektromagnetischer strahlung und verfahren zur bereitstellung derselben |
US9287516B2 (en) * | 2014-04-07 | 2016-03-15 | International Business Machines Corporation | Forming pn junction contacts by different dielectrics |
KR101901506B1 (ko) * | 2017-01-06 | 2018-09-21 | 연세대학교 산학협력단 | 발광 트랜지스터 및 이의 제조 방법 |
US10727431B2 (en) * | 2018-06-29 | 2020-07-28 | International Business Machines Corporation | Optoelectronic devices based on intrinsic plasmon-exciton polaritons |
US11056797B2 (en) | 2019-07-29 | 2021-07-06 | Eagle Technology, Llc | Articles comprising a mesh formed of a carbon nanotube yarn |
US11949161B2 (en) | 2021-08-27 | 2024-04-02 | Eagle Technology, Llc | Systems and methods for making articles comprising a carbon nanotube material |
US11901629B2 (en) | 2021-09-30 | 2024-02-13 | Eagle Technology, Llc | Deployable antenna reflector |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA1267965C (en) * | 1985-07-26 | 1990-04-17 | DOUBLE INJECTION FIELD EFFECT TRANSISTORS | |
US4882295A (en) * | 1985-07-26 | 1989-11-21 | Energy Conversion Devices, Inc. | Method of making a double injection field effect transistor |
EP0709902B1 (en) * | 1994-10-26 | 2002-01-23 | Mitsubishi Chemical Corporation | Light-emitting semiconductor device and method for manufacturing the same |
GB2364933B (en) * | 2000-07-18 | 2002-12-31 | Lg Electronics Inc | Method of horizontally growing carbon nanotubes |
US20020063282A1 (en) * | 2000-11-29 | 2002-05-30 | Chiu-Te Lee | Buried transistor for a liquid crystal display system |
-
2002
- 2002-09-26 US US10/255,351 patent/US7115916B2/en not_active Expired - Lifetime
-
2003
- 2003-06-30 TW TW092117821A patent/TWI284912B/zh not_active IP Right Cessation
- 2003-09-26 CN CNA03822903XA patent/CN1685528A/zh active Pending
- 2003-09-26 AU AU2003279724A patent/AU2003279724A1/en not_active Abandoned
- 2003-09-26 MX MXPA05003154A patent/MXPA05003154A/es active IP Right Grant
- 2003-09-26 JP JP2004540257A patent/JP2006501654A/ja active Pending
- 2003-09-26 WO PCT/US2003/030647 patent/WO2004030043A2/en active Application Filing
- 2003-09-26 EP EP03773062A patent/EP1547165A4/en not_active Withdrawn
- 2003-09-26 KR KR1020057003320A patent/KR100646719B1/ko not_active IP Right Cessation
-
2005
- 2005-03-24 IL IL167667A patent/IL167667A/en active IP Right Grant
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103518255A (zh) * | 2011-05-10 | 2014-01-15 | 国际商业机器公司 | 具有减小寄生电阻的带电单层的碳场效应晶体管 |
CN103518255B (zh) * | 2011-05-10 | 2016-09-28 | 国际商业机器公司 | 具有减小寄生电阻的带电单层的碳场效应晶体管 |
CN103227257A (zh) * | 2013-04-12 | 2013-07-31 | 中国科学院物理研究所 | 电光转换元件及其应用 |
CN103227257B (zh) * | 2013-04-12 | 2015-11-18 | 中国科学院物理研究所 | 电光转换元件及其应用 |
Also Published As
Publication number | Publication date |
---|---|
TW200415667A (en) | 2004-08-16 |
EP1547165A4 (en) | 2009-05-27 |
JP2006501654A (ja) | 2006-01-12 |
MXPA05003154A (es) | 2005-07-05 |
US20040061422A1 (en) | 2004-04-01 |
US7115916B2 (en) | 2006-10-03 |
EP1547165A2 (en) | 2005-06-29 |
WO2004030043A2 (en) | 2004-04-08 |
IL167667A (en) | 2009-11-18 |
WO2004030043A3 (en) | 2004-09-16 |
KR20050058525A (ko) | 2005-06-16 |
AU2003279724A1 (en) | 2004-04-19 |
KR100646719B1 (ko) | 2006-11-23 |
AU2003279724A8 (en) | 2004-04-19 |
TWI284912B (en) | 2007-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN1685528A (zh) | 分子光发射器件 | |
US10355216B2 (en) | Method of selective separation of semiconducting carbon nanotubes, dispersion of semiconducting carbon nanotubes, and electronic device including carbon nanotubes separated by using the method | |
Freitag et al. | Mobile ambipolar domain in carbon-nanotube infrared emitters | |
Aleshin et al. | Solution-processed field-effect transistors based on polyfluorene–cesium lead halide nanocrystals composite films with small hysteresis of output and transfer characteristics | |
US8564048B2 (en) | Contact barrier modulation of field effect transistors | |
Sakanoue et al. | Visible light emission from polymer-based field-effect transistors | |
US20060057354A1 (en) | Electronic and opto-electronic devices fabricated from nanostructured high surface to volume ratio thin films | |
CN1841664A (zh) | 纳米部件的掺杂方法,制作场效应晶体管和纳米管场效应晶体管的方法 | |
CN1459815A (zh) | 通过氢改性的半导体碳纳米管及其制备方法 | |
CN101281933A (zh) | 一种基于碳纳米管的光电器件、光电集成电路单元及电路 | |
CA2537198A1 (en) | Vertical organic field effect transistor | |
CN1875496A (zh) | 垂直有机场效应晶体管 | |
Itoh et al. | Field emission from carbon-nanotube-dispersed conducting polymer thin film and its application to photovoltaic devices | |
Wang et al. | Controllable n-type doping in WSe2 monolayer via construction of anion vacancies | |
JP2005209736A (ja) | 半導体素子とその製造方法 | |
Shin et al. | Electrically Confined Electroluminescence of Neutral Excitons in WSe2 Light‐Emitting Transistors | |
Navitski et al. | Efficient and reliable field emission from silicon tip arrays for miniaturized electron sources | |
Zhang et al. | Gate voltage dependent characteristics of p–n diodes and bipolar transistors based on multiwall CNx/carbon nanotube intramolecular junctions | |
Wang et al. | Electrically driven light emission from single quantum dots using pulsed MOS capacitors | |
CN102945905A (zh) | 基于硼碳氮纳米管的可见光发光二极管 | |
Yadav et al. | Optical and Electrical Properties of Poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene]/Graphene Composite for Photovoltaic Applications | |
Zheng et al. | LED device based on single-walled carbon nanotube arrays | |
Yoshida et al. | Subthreshold behavior in nanoparticle-dispersed poly (3-hexylthiophene) FET | |
Chen | Carbon nanotubes for potential electronic and optoelectronic applications | |
Li et al. | Characteristics of Vertical Carbon Nanotube Field-Effect Transistors on p-GaAs |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C12 | Rejection of a patent application after its publication | ||
RJ01 | Rejection of invention patent application after publication |