CN1674373A - Base used for small-volume high-speed laser device package - Google Patents

Base used for small-volume high-speed laser device package Download PDF

Info

Publication number
CN1674373A
CN1674373A CN 200510018482 CN200510018482A CN1674373A CN 1674373 A CN1674373 A CN 1674373A CN 200510018482 CN200510018482 CN 200510018482 CN 200510018482 A CN200510018482 A CN 200510018482A CN 1674373 A CN1674373 A CN 1674373A
Authority
CN
China
Prior art keywords
pin
device body
planar waveguide
design
circuit substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN 200510018482
Other languages
Chinese (zh)
Inventor
郑林
沈坤
陈晓莉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wuhan Telecommunication Devices Co Ltd
Original Assignee
Wuhan Telecommunication Devices Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wuhan Telecommunication Devices Co Ltd filed Critical Wuhan Telecommunication Devices Co Ltd
Priority to CN 200510018482 priority Critical patent/CN1674373A/en
Publication of CN1674373A publication Critical patent/CN1674373A/en
Pending legal-status Critical Current

Links

Images

Landscapes

  • Semiconductor Lasers (AREA)

Abstract

The present invention discloses a base seat for packaging small-volume high-speed laser device. Said invention is formed from device tube body, circuit baseplate and pin. The pin is directly connected with device body by means of high-temperature sintering glass, the circuit baseplate is placed on the platform of device tube body and is connected with pin by means of tin solder, on the ceramic baseplate the matched resistor and coplanar waveguide wire are set, and the described pin includes detector anode pin, high-speed signal output pin, device ground pin, high-speed signal input pin and detector cathode pin which are divided into upper and lower parallelly-arranged two layers.

Description

The base that is used for the small-volume high-speed laser device encapsulation
Technical field
The present invention relates to a kind of Laser Devices encapsulation base plate; Specifically, the integrated design and the technology thereof that relate to co-planar waveguide and coaxial packaging, promptly this base is a kind of base of the Laser Devices encapsulation that can in high speed optical communication high-speed microwave signal (high data rate of 10Gb/s) especially can effectively be transmitted in small size coaxial configuration device.
Background technology
At present, in the high-speed communication how with device miniaturization with guarantee that in miniaturization effective transmission of high speed signal is a difficult problem.Past, device volume is relatively large, and high speed transmission of signals is more secure when design, implements than being easier to, for example adopt two butterfly structures, half disc structure, little butterfly structure etc., these versions can guarantee the transmission of high speed signal effectively, it is easy that the technology realization is also compared, but the cost of manufacture of these versions is higher, and volume is bigger, can not satisfy the requirement of present reduction product cost and miniaturization.Though the design of common coaxial component can be satisfied miniaturization, requirement cheaply, but the device of this class fails to take into full account the particularity of high speed transmission of signals when design, and impedance does not match, and is unfavorable for present high speed transmission of signals.
Summary of the invention
Purpose of the present invention just is to overcome that existing high speed device volume is big, cost is higher; The coaxial component of small size again can not transmit high-speed signals etc. the deficiency of shortcoming, a kind of base that is used for the small-volume high-speed laser device encapsulation is provided, this base can not only transmit high-speed signals, and has small size, advantage cheaply.
The present invention solves the technical thought that its technical problem adopts: adopt the technique guarantee high speed transmission of signals of co-planar waveguide in device, adopt coaxial encapsulation to reduce volume and cost simultaneously.
In general design, the design of co-planar waveguide and coaxial packaging combination well; Because coaxial design at first wants cube little, in limited space, finish the intact of the function of general device and guaranteed performance, but general coaxial design, four pins can't be realized the design of co-planar waveguide by center of circle arranged in co-axial alignment.
In the design, changed the structure of general coaxial design, divide two-layer being arranged in parallel up and down with pin, the technology of co-planar waveguide can be introduced in the coaxial design like this, co-planar waveguide will be effectively with the high speed signal complete transmission, base remains circular coaxial and general coaxial coupling simultaneously.Specifically, the design divides two-layer being arranged in parallel up and down with pin, and wherein three pins and body constitute the structural transmission high-speed electrical signals of co-planar waveguide, and can reasonably design the resistance value of co-planar waveguide according to the needs of device; Other pin provides bias current respectively and detects the working condition of coaxial inner laser device.
For realizing above design, the present invention is with circuit transmission and separately design of mechanical realization, the transmission of circuit selects for use the reasonable ceramic material of high frequency characteristics to make substrate, on ceramic substrate, finish all circuit design, comprise impedance matching, high-frequency transmission, direct current biasing etc., then ceramic substrate is welded on the coaxial body, draws pin, input/output signal; Coaxial body is selected general body material for use, and suitably opening is used to install ceramic substrate; Design coaxial pipe cap at last, finish whole designs.
As Fig. 1, the present invention is by device body A, and circuit substrate B and pin C form; Its position with annexation is: pin C directly links to each other by the high temperature sintering of glass with device body A, and circuit substrate B places on the platform of device body A and is connected with pin C by scolding tin.
Device body A is the platform that device provides support; The transmission that is designed to high-speed electrical signals of circuit substrate B is given security; Pin C provides input/output signal for device.
As Fig. 2, described circuit substrate B is made up of co-planar waveguide line a, ceramic substrate b, build-out resistor R; Its position and annexation are: ceramic substrate b is provided with build-out resistor R and co-planar waveguide line a.
The sheet material high frequency characteristics of general circuit is relatively poor, inapplicable design at high speed device, and the high speed circuit of making substrate with pottery has good high frequency characteristics; According to the working condition of reality, the design of co-planar waveguide line a, the resistance value that control needs in conjunction with the use of build-out resistor R, just can guarantee the integrality of high speed signal well in the high speed device of small size.
As Fig. 3, described pin C comprises detector anode pin C1, laser cathode pin C2, device ground pin C3, laser anode pin C4 and surveys detector negative electrode pin C5, is two-layer being arranged in parallel up and down; Connect detector PD between detector anode pin C1 and the detector negative electrode pin C5, connect laser LD and resistance R between high speed signal output pin C2 and the high speed signal input pin C4; Device ground pin C3 ground connection.
Detector anode pin C1, detector negative electrode pin C5 provide voltage for detector PD, guarantee detector PD work and cooperate output current with relevant external circuit, the definition that can according to circumstances exchange C1 and C5 in actual the use;
Laser cathode pin C2, laser anode pin C4 provide input current and high speed signal transmission for laser LD;
Device ground pin C3 is the ground pin of device, the interference that can the shielding device external signal and the radiation of device inside signal and provide good ground level for the design of co-planar waveguide line; Resistance R can be adjusted not matching between laser LD and circuit, guarantees the high speed signal integrality, and the resistance of resistance R is selected according to the resistance value of designed waveguide wire a usually.
The present invention has the following advantages and good effect:
1, owing to two-layer parallel pin Communicating device spare inside and outside circuit about being, high-speed transmission line is also referred to as the inside of co-planar waveguide line and build-out resistor design at device base, therefore by incorporate circuit design, in device, obtain good high-frequency transmission performance, thereby guarantee that device can utilize the form of co-planar waveguide that high speed signal intactly is transferred to laser, guarantee that promptly laser works arrives the high data rate of 10Gb/s.
2, high speed signal and biasing circuit cut apart the integrality that can better guarantee signal transmission, coaxial output form can continue former technology, greatly saves cost.
3, the compatible general coaxial component size of device external dimensions can be saved the packaging cost of device.
In a word, because therefore ratio of performance to price height of the present invention has wide application prospect.
Description of drawings
Fig. 1 (comprising Fig. 1 .1, Fig. 1 .2, Fig. 1 .3, Fig. 1 .4)-base assembly drawing of the present invention (views of different angles);
Fig. 2-ceramic substrate schematic diagram of the present invention.
Fig. 3-circuit diagram of the present invention.
Wherein:
A-device body;
The B-circuit substrate comprises:
A-co-planar waveguide line;
The b-ceramic substrate;
The R-build-out resistor;
The C-pin comprises:
C1-detector anode pin;
C2-laser cathode pin;
C3-device ground pin;
C4-laser anode pin;
C5-detector negative electrode pin;
The LD-laser;
PD-monitoring detector backlight is called for short detector.
Embodiment
The present invention is further illustrated below in conjunction with accompanying drawing and manufacture craft.
Device body A is the support platform of whole device, and by the mechanical stamping once-forming, layman's size and general common coaxial base consistent size make things convenient for the subsequent technique of laser device to realize, save cost.The semicircle design of Platform of device body A is different with common body, can in coaxial small size, utilize the space as far as possible, place the big scope that leaves for the design of circuit substrate B with in device, be pressed with the parallel via hole of two rows in body A upper punch simultaneously, make things convenient for the parallel design of pin C.Pin C selects for use the metal alloy compositions similar to the glass heat performance to make with device body A, and the high temperature sintering by glass combines then, and circuit substrate B and pin C and device body A weld together by the high-temperature metal scolder.
Circuit substrate B in device for device provides circuit platform, as Fig. 2.Select the good ceramic making ceramic substrate b of thermal diffusivity and high frequency performance for use.The requirement on electric performance design that ceramic substrate b goes up in conjunction with the material properties of substrate and Laser Devices has high speed microstrip line co-planar waveguide line a just.Co-planar waveguide line a is produced on materials such as golden platinum titanium on the ceramic substrate b by methods such as evaporations, and two parts are arranged, and can provide input and output for laser tube core according to concrete operating position; Also utilize the thin-film technique design that build-out resistor R is arranged on the co-planar waveguide line a, the value of build-out resistor R can be according to the actual conditions adjustment.
The material of pin C is identical with body A, generally selects for use suitable metal circular wire rod to obtain by tensile shear, and pin one of the present invention has five, and the use that is respectively device provides different functions of use; Circular pin design also is identical with the pin of medium base, the convenient use of using the device person; It is different that the arrangement of pin is arranged with the concentric of medium base pin, and it is that two rows are parallel that pin of the present invention is arranged, and a row has three pins, and a row is two pins.The thickness of pin is to determine according to instructions for use, material situation and the glass sintering technology of device.
The surface requirements of device body A and pin C is gold-plated, to guarantee the solderability and the oxidation resistance of device.

Claims (3)

1, a kind of base that is used for the small-volume high-speed laser device encapsulation is characterized in that:
By device body (A), circuit substrate (B) and pin (C) are formed, and pin (C) directly links to each other with the high temperature sintering of device body (A) by glass, and circuit substrate (B) places on the platform of device body A and is connected with pin (C) by scolding tin;
Described circuit substrate (B) is made up of co-planar waveguide line (a), ceramic substrate (b), build-out resistor (R); Ceramic substrate (b) is provided with build-out resistor (R) and co-planar waveguide line (a);
Described pin (C) comprises detector anode pin (C1), high speed signal output pin (C2), device ground pin (C3), high speed signal input pin (C4) and surveys detector negative electrode pin (C5), is two-layer being arranged in parallel up and down.
2, by the described base of claim 1, it is characterized in that:
The metal alloy that device body (A) is similar to the glass heat performance with the material selection of pin (C), there is golden film on the surface.
3, make the technology of the described base of claim 1, it is characterized in that:
Device body (A) is by the mechanical stamping once-forming, and punching press has the parallel via hole of two rows;
The co-planar waveguide line (a) of circuit substrate (B) is that golden platinum titanium is produced on the ceramic substrate (b) by evaporation;
The surface gold-plating of device body (A) and pin (C).
CN 200510018482 2005-03-31 2005-03-31 Base used for small-volume high-speed laser device package Pending CN1674373A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200510018482 CN1674373A (en) 2005-03-31 2005-03-31 Base used for small-volume high-speed laser device package

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200510018482 CN1674373A (en) 2005-03-31 2005-03-31 Base used for small-volume high-speed laser device package

Publications (1)

Publication Number Publication Date
CN1674373A true CN1674373A (en) 2005-09-28

Family

ID=35046714

Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200510018482 Pending CN1674373A (en) 2005-03-31 2005-03-31 Base used for small-volume high-speed laser device package

Country Status (1)

Country Link
CN (1) CN1674373A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101888057B (en) * 2009-05-11 2012-10-03 唐福云 Preparation method of laser diode packaging case
CN107508141A (en) * 2017-08-16 2017-12-22 青岛海信宽带多媒体技术有限公司 The laser and optical module of a kind of coaxial packaging
JP2020021911A (en) * 2018-08-03 2020-02-06 日本ルメンタム株式会社 Optical subassembly and optical module
JP2020021912A (en) * 2018-08-03 2020-02-06 日本ルメンタム株式会社 Optical subassembly and optical module
US10819084B2 (en) 2017-06-02 2020-10-27 Hisense Broadband Multimedia Technologies Co., Ltd. TO-CAN packaged laser and optical module

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101888057B (en) * 2009-05-11 2012-10-03 唐福云 Preparation method of laser diode packaging case
US10819084B2 (en) 2017-06-02 2020-10-27 Hisense Broadband Multimedia Technologies Co., Ltd. TO-CAN packaged laser and optical module
CN107508141A (en) * 2017-08-16 2017-12-22 青岛海信宽带多媒体技术有限公司 The laser and optical module of a kind of coaxial packaging
JP2020021911A (en) * 2018-08-03 2020-02-06 日本ルメンタム株式会社 Optical subassembly and optical module
JP2020021912A (en) * 2018-08-03 2020-02-06 日本ルメンタム株式会社 Optical subassembly and optical module
JP7245620B2 (en) 2018-08-03 2023-03-24 日本ルメンタム株式会社 Optical subassemblies and optical modules
JP7249745B2 (en) 2018-08-03 2023-03-31 日本ルメンタム株式会社 Optical subassemblies and optical modules

Similar Documents

Publication Publication Date Title
DE10213701B4 (en) Highly reflective ohmic contacts for AlGaln flip-chip LEDs
CN1674373A (en) Base used for small-volume high-speed laser device package
CN103515682A (en) Micro-strip-to-waveguide vertical transition structure achieved through multi-layer step type substrate integration waveguide
JP7197647B2 (en) High frequency substrates, high frequency packages and high frequency modules
CN103390713A (en) Semi-conductor luminescent device provided with light reflection layer
KR20170133717A (en) Light emitting device
CN212648266U (en) Semiconductor light emitting element and light emitting device
CN103329260A (en) Package for accommodating semiconductor element, semiconductor device provided with same, and electronic device
WO2022141953A1 (en) To package structure
CN104364897A (en) Element-housing package and mounting structure body
CN108107514A (en) A kind of shell structure for box packaging optical devices
CN2888662Y (en) High-performance waveguide filter with integrated microwave/millimeter wave substrate
CN1618126A (en) Wire bond-less electronic component for use with an external circuit and method of manufacture
CN107317080A (en) Inexpensive microstrip line encapsulation based on the integrated gap waveguide of substrate
CN114374094A (en) Vertical transmission structure based on ridge gap waveguide and inverted microstrip line gap waveguide
CN104966903B (en) A kind of suspension micro-strip antenna array and its antenna for 60GHz millimetre-wave attenuators
CN1700513A (en) Chip integrated waveguide broad-band multipath power distributor
CN1764026A (en) The semiconductor laser high-frequency encapsulation is with having the heat sink of microstrip structure
CN206976548U (en) SIGW low costs microstrip line encapsulates
CN110197946A (en) High-gain microstrip antenna
CN204696445U (en) For the novel base of laser coaxial encapsulation
CN103178340A (en) Balanced micro-strip line feeding printed V-shaped antenna with loading metal disc
CN1460309A (en) Connection structure of connector pin and signal line and semiconductor package using it
CN208849070U (en) Double antenna element
CN1211881C (en) Nonreciprocal circuit element and communication device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication