KR20170133717A - Light emitting device - Google Patents

Abstract

Provided is a display device which comprises: a pixel array; and a control unit. The display device can reduce the thickness, and can increase visibility. An embodiment of the present invention relates to the pixel array which comprises: a substrate; and a plurality of light emitting elements arranged in a matrix form by separating from each other on the substrate. Each of the light emitting elements includes: a light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; an insulating layer arranged under the second conductive semiconductor layer; first and second electrode pads arranged by separating from each other under the insulating layer, and arranged on the substrate; a first electrode passing through the light emitting structure and the insulating layer, and connected to the first electrode pad; a second electrode arranged between the second conductive semiconductor layer and the second electrode pad; and a passivation layer arranged between the first electrode and the light emitting structure. The first electrode passes through the passivation layer so as to be in contact with the first conductive semiconductor layer.

Description

[0001] LIGHT EMITTING DEVICE [0002]

An embodiment relates to a light emitting element.

BACKGROUND ART Light emitting diodes (LEDs) are a kind of semiconductor devices that convert the electric power to infrared rays or light using the characteristics of compound semiconductors, exchange signals, or use as a light source.

Group III-V nitride semiconductors have been spotlighted as core materials for light emitting devices such as light emitting diodes (LEDs) or laser diodes (LD) due to their physical and chemical properties.

Since such a light emitting diode does not contain environmentally harmful substances such as mercury (Hg) used in conventional lighting devices such as incandescent lamps and fluorescent lamps, it has excellent environmental friendliness, and has advantages such as long life and low power consumption characteristics. .

Embodiments provide a display device capable of reducing the thickness and increasing the visibility.

An exemplary pixel array includes a substrate; And a plurality of light emitting devices disposed on the substrate in a matrix form, the light emitting devices each including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; An insulating layer disposed under the second conductive type semiconductor layer; A first electrode pad and a second electrode pad disposed on the substrate and spaced apart from each other below the insulating layer; A first electrode penetrating the light emitting structure and the insulating layer and connected to the first electrode pad; And a second electrode disposed between the second conductive semiconductor layer and the second electrode pad; And a passivation layer disposed between the first electrode and the light emitting structure, wherein the first electrode contacts the first conductive semiconductor layer through the passivation layer.

A pixel array according to another embodiment includes a substrate; And a plurality of light emitting devices disposed on the substrate in a matrix form, the light emitting devices each including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer; A passivation layer disposed on the first conductive semiconductor layer; A first conductive semiconductor layer disposed on the passivation layer and having one end contacting the first conductive semiconductor layer through the passivation layer and the other end extending toward a side of the light emitting structure, electrode; A second electrode disposed below the second conductive semiconductor layer; An electrode pad disposed under the second electrode; And an insulating layer disposed on a side surface of the light emitting structure, wherein the other end of the first electrode is spaced apart from an insulating layer disposed on a side surface of the light emitting structure.

A pixel array according to another embodiment includes a substrate; And a plurality of light emitting devices disposed on the substrate in a matrix form, the light emitting devices each including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer A plurality of light emitting cells spaced apart from each other; An insulating layer disposed under the second conductive type semiconductor layer of the light emitting cells; At least one first electrode disposed between two adjacent light emitting cells and contacting the first conductive semiconductor layers of the adjacent two light emitting cells; A first electrode pad and a second electrode pad spaced apart from each other below the insulating layer; And a passivation layer disposed between the at least one first electrode and a side surface of the light emitting structure of the plurality of light emitting cells, wherein one end of the electrode is in contact with the first conductive semiconductor layer through the passivation layer And the other end of the first electrode is connected to the at least one first electrode pad through the light emitting structure and the insulating layer.

Wherein the light emitting elements include a light emitting element that emits red light in a row direction and a column direction of the matrix, a light emitting element that emits blue light, a light emitting element that generates red light, and a light emitting element that generates green light, The light emitting element that generates light and the light emitting element that generates the blue light may be repeatedly arranged.

Wherein the light emitting elements include a light emitting element that generates blue light, a light emitting element that generates red light, or a light emitting element that generates green light, wherein a first pair and a second pair are alternately arranged in the column direction of the matrix, The first pair may include a light emitting element that generates blue light and blue light that are sequentially arranged, and a light emitting element that generates green light. The second pair may include a light emitting element that generates red light and a light emitting element that generates green light, .

Wherein the light emitting elements include a first array in which light emitting elements for generating blue light and light emitting elements for generating red light are alternately arranged in the row direction and a second array in which only light emitting elements for generating green light are arranged, 1 array may be either an even row or an odd row, and the second array may be any one of an even row and an odd row.

Each of the light emitting devices includes a first light emitting cell for generating blue light, a second light emitting cell for generating green light, and a third light emitting cell for generating red light, and the first to third light emitting cells include a row The first light emitting cell, the second light emitting cell, and the third light emitting order in the first direction, the second direction, and the column direction, respectively.

The light emitting devices include a first light emitting device including a first light emitting cell for generating blue light and a second light emitting cell for generating green light, a third light emitting cell for generating red light, and a fourth light emitting cell for generating green light. And the first and second light emitting devices may be alternately arranged in the column direction and the row direction of the matrix, respectively.

The light emitting devices include a first light emitting device including a first light emitting cell for generating blue light and a second light emitting cell for generating green light, a third light emitting cell for generating red light, and a fourth light emitting cell for generating green light. Wherein the first to fourth light emitting cells are sequentially and repeatedly arranged in a column direction of the matrix and the first and third light emitting cells are arranged in a row direction of the matrix, Can be alternately arranged.

The area of the light emitting area of the light emitting device that generates the green light and the area of the light emitting area of the light emitting device that generates the red light may be larger than the area of the light emitting area of the light emitting device that generates the blue light.

The area of the light emitting area of the light emitting device that generates the green light may be smaller than the area of the light emitting area of the light emitting device that generates the blue light and the area of the light emitting area of the light emitting device that generates the red light.

The pixel array includes a first wiring electrode connected to the first electrode pad through the substrate; And a second wiring electrode connected to the second electrode pad through the substrate.

Wherein the light emitting elements include a first light emitting element for generating blue light, a second light emitting element for generating red light, and a third light emitting element for generating green light, wherein each of the first electrodes of the first to third light emitting elements And the second electrode pads of the first to third light emitting elements may be disposed on the substrate so as to be spaced apart from each other.

The pixel array including: a first wiring electrode penetrating the substrate and connected to the common connection electrode; And second wiring electrodes passing through the substrate and connected to a corresponding one of the second electrode pads.

Wherein the light emitting elements include a first light emitting element for generating blue light, a second light emitting element for generating red light, and a third light emitting element for generating green light, and the first electrodes of the first to third light emitting elements, And the second electrode pads of the first to third light emitting elements may be disposed on the substrate so as to be spaced apart from each other.

The pixel array including a first wiring electrode connected to the first electrodes through the substrate; And second wiring electrodes passing through the substrate and connected to a corresponding one of the second electrode pads. Wherein the first wiring electrode includes first extending portions extending in a first direction parallel to a row direction or a column direction of the matrix, and each of the second wiring electrodes is opposite to the first direction or the first direction Wherein the first extending portions and the second extending portions are alternately arranged in a direction perpendicular to the first direction, and the first extending portions are arranged alternately with the second extending portions Or < / RTI >

One of the second wiring electrodes is located at the center, and the remaining second wiring electrodes have a ring shape having a different diameter from each other, and concentrically with respect to any one of the second wiring electrodes positioned at the center Respectively.

The display device according to the embodiment includes the pixel array described above; And a controller for controlling driving of the light emitting elements of the pixel array.

The embodiment can reduce the thickness and increase the visibility.

1 is a top plan view of a light emitting device according to an embodiment.
2 is a bottom plan view of the light emitting device shown in Fig.
3 is a sectional view of the light emitting device shown in Figs. 1 and 2 in the AB direction.
4 is a sectional view of the light emitting device shown in Figs. 1 and 2 in the CD direction.
5A shows an embodiment of the first electrode shown in FIG.
5B shows another embodiment of the first electrode shown in FIG.
6 is a sectional view of a light emitting device according to another embodiment.
7A is a top plan view of a light emitting device according to another embodiment.
7B is a bottom plan view of the light emitting device shown in FIG. 7A.
8A is a top plan view of a light emitting device according to another embodiment.
8B is a bottom plan view of the light emitting device shown in FIG. 8A.
9 is a cross-sectional view taken along the line I-II of the light emitting device shown in Figs. 8A and 8B.
10 shows a cross-sectional view of a lighting device according to an embodiment.
11 is a top plan view of a light emitting device according to another embodiment.
12 is a bottom plan view of the light emitting device shown in Fig.
13 is a cross-sectional view of the light emitting device shown in Figs. 11 and 12 in the AB direction.
Fig. 14 shows a cross-sectional view of the light emitting device shown in Figs. 11 and 12 in the CD direction.
Fig. 15A shows an embodiment of the first electrode shown in Fig.
Fig. 15B shows another embodiment of the first electrode shown in Fig.
16 is a sectional view of a light emitting device according to another embodiment.
17A is a top plan view of a light emitting device according to another embodiment.
17B is a bottom plan view of the light emitting device shown in Fig. 17A. Fig.
18A is a top plan view of a light emitting device according to another embodiment.
Fig. 18B is a bottom plan view of the light emitting device shown in Fig. 8A. Fig.
Fig. 19 is a cross-sectional view taken along the line I-II of the light emitting device shown in Figs. 18A and 8B.
20A is a top plan view of a light emitting device according to another embodiment.
20B is a bottom plan view of the light emitting device shown in Fig. 20A. Fig.
21 shows a cross-sectional view of a lighting device according to another embodiment.
22 is a top plan view of the light emitting device according to the embodiment.
23 is a bottom plan view of the light emitting device shown in Fig.
24 is a cross-sectional view of the light emitting device shown in Figs. 22 and 23 in the AB direction.
Fig. 25A shows an embodiment of the first electrode shown in Fig.
Fig. 25B shows another embodiment of the first electrode shown in Fig.
26A is a cross-sectional view of a light emitting device according to another embodiment.
26B shows a cross-sectional view of a light emitting device according to another embodiment
26C shows a cross-sectional view of a light emitting device according to another embodiment
27A is a top plan view of a light emitting device according to another embodiment.
27B is a bottom plan view of the light emitting device shown in Fig. 27A. Fig.
28A is a top plan view of a light emitting device according to another embodiment.
28B is a bottom plan view of the light emitting device shown in Fig. 28A. Fig.
29A is a cross-sectional view of the light emitting device shown in Figs. 28A and 28B according to one embodiment of the I-II direction.
FIG. 29B shows a cross-sectional view of another embodiment of the light emitting device shown in FIGS. 28A and 28B shown in FIG. 29A in the I-II direction.
30A is a top plan view of a light emitting device according to another embodiment.
30B is a bottom plan view of the light emitting device shown in FIG.
30C is a top plan view of a light emitting device according to another embodiment.
31A is a top plan view of a light emitting device according to another embodiment
FIG. 31B shows a bottom plan view of the light emitting device shown in FIG. 31A. FIG.
32A is a top plan view of a light emitting device according to another embodiment.
32B is a bottom plan view of the light emitting device shown in Fig. 32A. Fig.
Fig. 33A shows a cross-sectional view in the EF direction of the light emitting element shown in Fig. 32A.
Fig. 33B shows a cross-sectional view in the GH direction of the light emitting element shown in Fig. 32A.
34 shows a cross-sectional view of a lighting apparatus according to an embodiment.
35 shows a cross-sectional view of a lighting apparatus according to another embodiment
36 is a plan view of a display device according to the embodiment.
37 shows a cross-sectional view of the display device shown in FIG. 36 according to one embodiment in the direction AA '.
38 shows a cross-sectional view according to another embodiment in the direction AA 'of the display device shown in Fig.
FIG. 39A shows the arrangement relationship of the first electrodes and the second electrode pads of the light emitting elements constituting one image pixel shown in FIGS. 36 and 37. FIG.
FIG. 39B shows a first wiring electrode and a second wiring electrode connected to the first electrodes and the second electrode pads shown in FIG. 39A.
40A shows another embodiment of the first electrodes and the second electrode pads of the light emitting elements constituting one image pixel shown in Figs. 36 and 37. Fig.
FIG. 40B shows another embodiment of the first wiring electrode and the second wiring electrode connected to the first electrodes and the second electrode pads shown in FIG. 40A.
41A shows another embodiment of the first electrodes and the second electrode pads of the light emitting elements constituting one image pixel shown in Figs. 36 and 37. Fig.
FIG. 41B shows another embodiment of the first wiring electrode and the second wiring electrode connected to the first electrodes and the second electrode pads shown in FIG. 41A.
42A to 42G show a manufacturing method of a display device according to the embodiment.
43 is a plan view of a display device according to another embodiment.
Fig. 44 shows a cross-sectional view according to one embodiment of the direction of the BB 'of the display device shown in Fig.
Fig. 45 shows a cross-sectional view according to another embodiment of the direction of the BB 'of the display device shown in Fig.
46 is a plan view of a display device according to another embodiment.
Fig. 47 shows a cross-sectional view according to an embodiment in the CC 'direction of the display device shown in Fig. 46;
48 is a perspective view of the portable terminal according to the embodiment.
Fig. 49 shows a configuration diagram of the portable terminal shown in Fig. 48. Fig.

BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the following detailed description taken in conjunction with the accompanying drawings, in which: FIG. In the description of the embodiments, it is to be understood that each layer (film), region, pattern or structure may be referred to as being "on" or "under" a substrate, each layer It is to be understood that the terms " on "and " under" include both " directly "or" indirectly " do. In addition, the criteria for the top / bottom or bottom / bottom of each layer will be described with reference to the drawings. The same reference numerals denote the same elements throughout the description of the drawings.

1 is a top plan view of the light emitting device 100 according to the embodiment, FIG. 2 is a bottom plan view of the light emitting device 100 shown in FIG. 1, and FIG. 3 is a cross- FIG. 4 is a cross-sectional view of the light emitting device 100 shown in FIG. 1 and FIG. 2 in the CD direction.

1 to 4, the light emitting device 100 includes a light emitting structure 110, a passivation layer 120, a first electrode 130, a first electrode pad 135, a second electrode 140 A second electrode pad 145, and an insulation layer 150.

The light emitting structure 110 is disposed between the first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116 and between the first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116 And an active layer 114. For example, the light emitting structure 110 may have a structure in which the first conductivity type semiconductor layer 112, the active layer 114, and the second conductivity type semiconductor layer 116 are sequentially arranged from top to bottom.

For example, the diameter of the light emitting structure 110 may decrease from the first conductivity type semiconductor layer 112 toward the second conductivity type semiconductor layer 116, and the side surface of the light emitting structure 110 may have a reverse However, the present invention is not limited thereto.

Unlike a general light emitting device having a light transmitting substrate or a supporting substrate, the light emitting device 100 according to the embodiment does not have a light transmitting substrate or a supporting substrate. Because the chip size (for example, diameter) or volume of the light emitting device is reduced, the thickness or size of an application in which the light emitting device according to the embodiment is used, for example, a display device or the like can be reduced.

The first conductive semiconductor layer 112 may be a semiconductor compound such as a group III-V element, a group II-VI element, or the like, and may be doped with a first conductive type dopant.

For example, the first conductivity type semiconductor layer 112 may be a semiconductor semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + And an n-type dopant (e.g., Si, Ge, Se, Te, etc.) may be doped.

In order to increase light extraction, a light extracting structure, for example, irregularities 112a, may be formed on the upper surface of the first conductivity type semiconductor layer 112.

The active layer 114 is formed by energy generated during the recombination of electrons and holes provided from the first conductivity type semiconductor layer 112 and the second conductivity type semiconductor layer 116, Can be generated.

The active layer 114 may be a compound semiconductor of Group 3-Group 5 or Group 2-Group 6 and may be a single well structure, a multi-well structure, a Quantum-Wire structure, a Quantum Dot, (Quantum Disk) structure.

The active layer 114 may have a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + y? In the case where the active layer 114 is a quantum well structure, the active layer 114 is formed of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + And a barrier layer (not shown) having a composition formula of In _a Al _b Ga _{1 -a- b} N (0? A? 1, 0? _B ? 1, 0? A + ).

The energy band gap of the well layer of the active layer 114 may be lower than the energy band gap of the barrier layer. The well layer and the barrier layer may be alternately laminated at least once.

The second conductive semiconductor layer 116 may be a semiconductor compound such as Group 3-Group 5, Group 2-Group 6, or the like, and may be doped with a second conductive type dopant.

For example, the second conductivity type semiconductor layer 116 may be a semiconductor semiconductor having a composition formula of In _x Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y? 1, 0? _X + , And a p-type dopant (e.g., Mg, Zn, Ca, Sr, Ba) can be doped.

For example, the light emitting structure 110 may generate any one of red light, green light, and blue light, but it is not limited thereto, and may generate visible light of various wavelengths or generate ultraviolet light.

For example, the first conductivity type semiconductor layer of the light emitting structure 110 that generates red light may be In _x Al _y Ga _1-xy P (0? _X? 1, 0? _Y? 1, 0? _X + _{in x Al y Ga 1 -x- y} N semiconductor materials having a composition formula of (0≤x≤1, 0≤y≤1, 0≤x + y≤1 ), e.g., AlGaP, InGaP, AlInGaP, InP , GaN , InN, AlN, InGaN, AlGaN, InAlGaN, AlInN, AlGaAs, InGaAs, AlInGaAs, and GaP, and may include an n-type dopant.

For example, the active layer of the light emitting structure 110 for generating red light may be formed of GaInP / AlGaInP, GaP / AlGaP, InGaP / AlGaP, InGaN / GaN, InGaN / InGaN, GaN / AlGaN, InAlGaN / GaN, GaAs / AlGaAs, But the present invention is not limited thereto.

The composition of the quantum well layer of the active layer of the light emitting structure that generates red light may be (Al _p Ga _1-p ) _q In _1-q P layer (where _0? P? _{1, 0? Q? 1} ) the composition of the quantum barrier layer may be, but (Al _p1 Ga _{1-p1) q1 q1} in _1-P layer (where, 0≤p1≤1, 0≤q1≤1) but is not limited to such.

For example, the second conductivity type semiconductor layer of the light emitting structure that generates red light may be In _x Al _y Ga _1-xy P (0? _X? 1, 0? _Y? 1, 0? _X + May be formed of a semiconductor material having a composition formula of Al _y Ga _{1 -x- y} N (0? X? 1, 0? _Y ? 1, 0? X + y? 1) and may include a p-type dopant .

Although not shown in FIGS. 3 and 4, in order to prevent the electrons injected from the first conductivity type semiconductor layer 112 into the active layer 114 into the second conductivity type semiconductor layer 116, The light emitting structure 110 may further include an electron blocking layer disposed between the active layer 114 and the second conductive semiconductor layer 116. At this time, the energy band gap of the electron blocking layer is larger than the energy band gap of the barrier layer of the active layer 114.

The first electrode 130 penetrates the light emitting structure 110 and the insulating layer 150 disposed below the light emitting structure 110.

The first electrode 130 is located on one side of the light emitting structure 110 and is exposed on the other side of the light emitting structure 110, for example, the bottom surface of the light emitting structure 110.

The light emitting structure 110 may include a first through hole 301 penetrating the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116, A part of the through hole 130 may be disposed in the first through hole 301.

One end of the first electrode 130 is in contact with the first conductive semiconductor layer 112.

The other end of the first electrode 130 penetrating or passed through the light emitting structure 110 is exposed to the other surface of the light emitting structure 110 and connected to the first electrode pad 135.

For example, the first electrode 130 may be disposed on the upper surface of the first conductivity type semiconductor layer 112 and may be exposed through the lower surface of the second conductivity type semiconductor layer 116 through the light emitting structure 110 One end of the first electrode 130 may be in contact with the upper surface of the first conductivity type semiconductor layer 112 and the other end of the first electrode 130 may be exposed in the lower surface of the second conductivity type semiconductor layer 116 .

The passivation layer 120 is disposed between a portion of the first electrode 130 that penetrates the light emitting structure 110 and the inner surface of the first through hole 301 and includes a first electrode 130 and a light emitting structure 110 Through the first through hole 301 of the first through hole 301, thereby insulating the both.

For example, the first electrode 130 includes a penetrating electrode 132, an upper electrode 134, and a contact electrode 136.

The penetrating electrode 132 is disposed in the first through hole 301 of the light emitting structure 110 and penetrates or passes through the light emitting structure 110. One end of the penetrating electrode 132 may be connected to or contacted with the lower surface of the upper electrode 134 and the other end of the penetrating electrode 132 may be connected to or contact with the first electrode pad 135.

The diameter of the penetrating electrode 132 may gradually decrease as it goes from the first conductivity type semiconductor layer 112 to the second conductivity type semiconductor layer 116. However, The diameter of the electrode 132 may be increased or constant.

3 illustrates one through hole 301, one through electrode 132, and one first electrode pad 135, but the present invention is not limited thereto. In another embodiment, two or more through holes 301, , Corresponding through electrodes, and first electrode pads. In this case, the first through holes may be spaced from each other, and the through electrodes may be spaced from each other. The first electrode pads may be spaced apart from each other or may be connected to each other.

The upper electrode 134 is disposed on the upper surface of the first conductive semiconductor layer 112 located adjacent to the penetrating electrode 132 and the penetrating electrode 132. The lower surface of the upper electrode 134 is connected to or contacts with one end of the penetrating electrode 132.

One end of the contact electrode 136 is connected to the upper electrode 134 and the other end is in contact with the upper surface of the first conductive type semiconductor layer 112.

For example, the contact electrode 136 may extend from the lower surface of the upper electrode 134 toward the upper surface of the first conductive type semiconductor layer 112 and may be in ohmic contact with the upper surface of the first conductive type semiconductor layer 112 have.

The passivation layer 120 may include a first passivation layer 122 disposed between the side of the first through hole 301 and the penetrating electrode 132. The first passivation layer 122 may be disposed between the portion of the light emitting structure 110 penetrated by the penetrating electrode 132 and the penetrating electrode 132.

The passivation layer 120 may further include a second passivation layer 124 disposed between the upper electrode 134 and the upper surface of the first conductive semiconductor layer 112.

For example, the second dielectric layer 124 may be disposed on the upper surface of the first conductive semiconductor layer 112, the upper electrode 134 may be disposed on the second dielectric layer 124, The electrode 136 may extend through the second passivation layer 124 to contact the upper surface of the first conductive semiconductor layer 112.

For example, the contact electrode 136 may be spaced apart from a portion where the penetrating electrode 132 and the upper electrode 134 are in contact with or connected to each other, and the contact electrode 136 may be located at a portion where the penetrating electrode 132 and the upper electrode 134 are in contact with or connected to each other And the second passivation layer 124 may be positioned between the contact electrode 136 and the second passivation layer 124.

The contact electrode 136 is separated from the portion where the penetrating electrode 132 and the upper electrode 134 are in contact with or connected to each other by the second passivation layer 124. Therefore, And may be dispersed and provided in the light emitting structure 110. Thus, the second passivation 124 may serve to disperse the current and provide it to the light emitting structure 110.

In FIG. 3, the second passivation layer 124 may expose a portion of the top surface of the first conductive semiconductor layer 112.

The passivation layer 120 may be formed of the transparent insulating material, for example, SiO _2, SiOx, Si ₃ N _4, TiO _2, SiNx, SiO _x N _y, or Al ₂ O _3.

FIG. 5A shows an embodiment of the first electrode 130 shown in FIG.

Referring to FIG. 5A, the first electrode 130 may include a penetrating electrode 132, an upper electrode 134, and a ring-shaped contact electrode 136 surrounding the penetrating electrode 132. For example, the contact electrode 136 may be in the form of a circular ring, but is not limited thereto, and may be polygonal or elliptical.

FIG. 5B shows another embodiment 130a of the first electrode 130 shown in FIG.

5B, the first electrode 130a includes a plurality of contact electrodes 136-1 to 136-N disposed around the penetrating electrode 132, the upper electrode 134, and the penetrating electrode 132, 4).

Each of the plurality of contact electrodes 136-1 to 136-4 is in contact with or connected to the lower surface of the upper electrode 134 and penetrates through the second passivation layer 124 to cover the upper surface of the first conductivity type semiconductor layer 112 As shown in FIG. For example, the shape of each of the plurality of contact electrodes 136-1 to 136-4 may be circular, but is not limited thereto, and may be polygonal or elliptic.

The first electrode pad 135 is disposed under the light emitting structure 110 and is connected to or in contact with the other end of the penetrating electrode 132 of the first electrode 130.

For example, the first electrode pad 135 may be disposed on the lower surface of the second conductivity type semiconductor layer 116 located adjacent to the penetrating electrode 132. For example, the center of the first electrode pad 135 may be aligned with the center of the penetrating electrode 132, but is not limited thereto.

The thickness of the first electrode pad 135 may be thicker than the thickness of the upper electrode 134 of the first electrode 130 for bonding, but the present invention is not limited thereto.

2, the planar shape of the first electrode pad 135 is circular, but it is not limited thereto. In other embodiments, the first electrode pad 135 may have an elliptical shape or a polygonal shape.

The second electrode 140 is disposed under the light emitting structure 110 and contacts the second conductive type semiconductor layer 116. For example, the second electrode 140 may be disposed on the lower surface of the light emitting structure 110, for example, on the lower surface of the second conductivity type semiconductor layer 116.

The second electrode 140 is disposed between the second conductive semiconductor layer 116 and the second electrode pad 145 and the second electrode 140 and the second conductive semiconductor layer 116 may be in ohmic contact with each other. have.

The second electrode 140 may be disposed on the lower surface of the second conductive type semiconductor layer 116 spaced apart from the other end of the penetrating electrode 132 exposed from the lower surface of the second conductive type semiconductor layer 116.

For example, the second electrode 140 may be disposed to surround the other end of the penetrating electrode 132 exposed from the lower surface of the second conductive type semiconductor layer 116.

The first electrode 130 may include an ohmic contact layer for ohmic contact with the first conductive semiconductor layer 112, and a reflective layer. For example, the first electrode 130 may be made of an alloy containing at least one of Pb, Sn, Au, Ge, Cu, Bi, Cd, Zn, Ag, Ni, Ti, ≪ / RTI >

The second electrode 140 may include an ohmic contact layer for ohmic contact with the second conductive semiconductor layer 116, and a reflective layer.

For example, the ohmic contact layer of the second electrode 140 may be a transparent conductive oxide such as ITO, or Ni, Cr. For example, the reflective layer of the second electrode 140 may include Ag, Al, or Rh, or an alloy containing Ag, Al, or Rh, or an alloy including Cu, Re, Bi, Al, Zn, Or Ni and an alloy of silver (Ag).

The second electrode 140 may further include at least one of a diffusion prevention layer and a bonding layer. For example, the second electrode 140 may further include a diffusion preventing layer including at least one of Ni, Cr, Ti, Pd, Pt, W, Co, or Cu. In addition, for example, the second electrode 140 may further include a bonding layer made of gold (Au), silver (Ag), or Au alloy.

Each of the first and second electrode pads 135 and 145 may be a conductive metal capable of maintaining electrical conduction to a portion bonded to a package body, a submount, or a substrate. For example, each of the first and second electrode pads 135 and 145 may include at least one of Au, Ni, Cu, or Al, or an alloy including at least one of them, Layer.

Also, for bonding, for example, to a package body, submount, or substrate, for self-assembly of a light emitting device having a small size (e.g., less than 100 microns) And the second electrode pads 135 and 145 may include at least one of Co, Ni, and Fe, or an alloy including at least one of them.

The insulating layer 150 is disposed on at least one of a side surface and a bottom surface of the light emitting structure 110.

The insulating layer 150 may be disposed under the second conductive semiconductor layer 116. For example, the insulating layer 150 may include a first insulating layer 152 disposed on the lower surface of the second conductive type semiconductor layer 116.

For example, the first insulating layer 152 may be disposed in a remaining region of the lower surface of the second conductive semiconductor layer 116 except for a region where the second electrode 140 is disposed. For example, the first insulating layer 152 may be disposed in the edge region of the lower surface of the second electrode 140 disposed on the lower surface of the second conductive type semiconductor layer 116, It is possible to expose a part of the lower surface.

The first electrode pad 135 and the second electrode pad 145 may be spaced apart from each other under the first insulating layer 152.

The first insulating layer 152 may be disposed between the lower surface of the second conductive semiconductor layer 116 and the first electrode pad 135 and may include a second conductive semiconductor layer 116 and a first electrode pad 135 Can be prevented.

The first insulating layer 152 may be disposed between the first electrode pad 135 and the second electrode pad 145 and may have an electrical contact between the first electrode pad 135 and the second electrode pad 145. [ Can be prevented.

The lower surface of the first electrode pad 135 and the lower surface of the second electrode pad 146 are formed on the same plane so as to perform die bonding with a package body, a submount, Lt; / RTI >

The first electrode pad 135 may be disposed under the first insulating layer 152 so as to be vertically aligned or overlapped with the penetrating electrode 132. The penetrating electrode 132 may penetrate the first insulating layer 152 Or may be in contact with or contact with the first electrode pad 135. Here, the vertical direction may be a direction from the second conductivity type semiconductor layer 116 of the light emitting structure 110 to the first conductivity type semiconductor layer 112.

The second electrode pad 145 may be disposed under a portion of the lower surface of the second electrode 140 exposed by the first insulating layer 152 and may be connected to the exposed portion of the second electrode 140 Can be contacted.

For example, the first insulating layer 152 may cover only a part of the upper side of the side surface of the second electrode pad 145. The edge of the second electrode pad 145 may be in contact with the lower surface of the first insulating layer 152 and may extend in the horizontal direction so as to be positioned below the lower surface of the first insulating layer 152, But is not limited thereto.

For example, the second electrode pad 145 may be convexly curved in the direction from the second conductivity type semiconductor layer 116 to the first conductivity type semiconductor layer 112, but the present invention is not limited thereto.

The lower surface of the first electrode pad 135 and the lower surface of the second electrode pad 146 may be covered with the first insulating layer 152, And the lower surface of the substrate may be located on the same plane.

The insulating layer 150 may further include a second insulating layer 154 disposed on a side surface of the light emitting structure 110. For example, the second insulating layer 154 may be disposed on the side surfaces of the first conductive type semiconductor layer 112, the active layer 114, and the second conductive type semiconductor layer 116.

For example, one end of the second insulating layer 154 may extend to the edge of the upper surface of the first conductive type semiconductor layer 112 to be connected to or in contact with the passivation layer 120, And the other end may be connected to or in contact with the first insulating layer 152.

Insulating layer 150 is an insulating material, e.g., SiO _2, SiOx, Si ₃ N _4, TiO _2, SiNx, SiO _x N _y, or Al ₂ O ₃ Or the like.

The insulating layer 150 may be a distributed Bragg reflective layer having a multilayer structure in which at least two layers having different refractive indexes are alternately laminated at least once.

The insulating layer 150 may have a structure in which a first layer having a first refractive index and a second layer having a second refractive index smaller than the first refractive index are alternately stacked one or more times.

For example, the insulating layer 150 may be a structure in which the TiO ₂ layer / SiO ₂ layer is laminated one or more times, the thickness of each of the first and second layers may be lambda / 4, The wavelength of light emitted from the light source can be expressed by the following equation.

6 shows a cross-sectional view of a light emitting device 100-1 according to another embodiment. The same reference numerals as those in FIG. 3 denote the same components, and a description of the same components will be simplified or omitted.

The passivation layer 120 of FIG. 3 exposes a portion of the top surface of the first conductivity type semiconductor layer 112. The passivation layer 120-1 of the light emitting device 100-1 of FIG. 6 may be formed in the same manner as the passivation layer 120-1 except for a portion of the upper surface of the first conductive semiconductor layer 112 exposed to be in contact with the contact electrode 136 , The upper surface of the first conductivity type semiconductor layer 112 may not be exposed. For example, the second passivation layer 124a may be formed on the entire upper surface of the first conductivity type semiconductor layer 112, except for a part of the upper surface of the first conductivity type semiconductor layer 112 in contact with the contact electrode 136. [ And may be in contact with or in contact with the second insulating layer 154.

FIG. 7A is a top plan view of the light emitting device 100-2 according to another embodiment, and FIG. 7B is a bottom plan view of the light emitting device 100-2 shown in FIG. 7A. 7A and 7B may be an embodiment including the second passivation layer 124a of FIG. 6. However, the present invention is not limited thereto, and the same can be applied to the light emitting device 100 shown in FIG.

3 and 6, the first electrode 130 is positioned to align with the center of the upper surface of the upper surface of the light emitting structure 110, while the first electrode 130b of the embodiment shown in FIGS. 7A and 7B May be located adjacent to one side of the sides of the light emitting structure 110. [

The arrangement of the first electrode 130 in FIGS. 3 and 6 can improve the current dispersion efficiency compared with the arrangement of the first electrode 130b in FIGS. 7A and 7B, but the package body the first electrode may be disposed at various positions depending on the arrangement and structure of the package body, the submount, or the conductive layer of the substrate.

For example, the light emitting structure 110 includes first and second side faces 110-1 and 110-2 facing each other and third and fourth side faces 110-3 and 110-4 facing each other And the first electrode 130b may be positioned closer to the second side 110-2 than the first side 110-1.

The shortest distance between the first side surface 110-1 and the penetrating electrode 132 of the first electrode 130b may be different from the shortest distance between the second side surface 110-2 and the penetrating electrode 132. [ For example, the shortest distance between the first side 110-1 and the penetrating electrode 132 of the first electrode 130b may be greater than the shortest distance between the second side 110-2 and the penetrating electrode 132

The first and second sides 110-1 and 110-2 may be short sides and the third and fourth sides 110-3 and 110-4 may be long sides. For example, the horizontal length of each of the first and second side surfaces 110-1 and 110-2 may be shorter than the horizontal length of each of the third and fourth side surfaces 110-3 and 110-4.

For example, the shortest distance from the third side surface 110-3 to the first electrode 130b, for example, the penetrating electrode 132 may be the distance from the fourth side surface 110-4 to the first electrode 130b, (132).

The light emitting devices 100, 100-1 and 100-2 shown in FIGS. 3, 6, 7A and 7B may have a chip size (for example, a maximum diameter of a chip) of less than 100 micrometers. In the light emitting device having a diameter of less than 100 microns, it is not easy to form a bonding pad for wire bonding. The light emitting device according to the embodiment includes the first electrode 130 that penetrates both the light emitting structure 110 and the insulating layer 150 so that the light emitting structure 110 having a small size area is flip- (For example, an n-type electrode pad) and a second electrode pad (for example, a p-type electrode pad) for die bonding can be easily implemented.

8A is a top plan view of the light emitting device 100-3 according to another embodiment, FIG. 8B is a bottom plan view of the light emitting device 100-3 shown in FIG. 8A, and FIG. 9 is a cross- 8B is a sectional view taken along the line I-II of the light emitting device 100-3.

8A, 8B and 9, the light emitting device 100-3 includes a light emitting structure 110 ', a passivation layer 124a, a first electrode 130-1, a first electrode pad 135' , A second electrode 140a, a second electrode pad 145 ', and an insulating layer 150a.

The light emitting structure 110 'includes the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116, but unlike the light emitting structure 110 shown in FIG. 3, The through hole 301 is not provided. The description of FIGS. 1 to 3 may be applied to the first conductive semiconductor layer 112, the active layer 114, and the second conductive semiconductor layer 116.

The second electrode 140a is disposed on the lower surface of the second conductive type semiconductor layer 116 and can be in ohmic contact with the second conductive type semiconductor layer 116. [ As for the material of the second electrode 140a, the description of the second electrode 140 may be applied equally.

The insulating layer 150a is disposed on the side surfaces and the bottom surface of the light emitting structure 110 '. For example, the insulating layer 150a may include a first insulating layer 152a disposed on the lower surface of the second conductive type semiconductor layer 116 and a second insulating layer 154a disposed on the side surface of the light emitting structure 110 ' .

For example, the first insulating layer 150a may be disposed in the edge region of the lower surface of the second electrode 140a disposed on the lower surface of the second conductive semiconductor layer 116, And the like.

The description of the first insulating layer 152 of FIG. 3 may be applied to the first insulating layer 152a of FIG. 9, and the description of the second insulating layer 154 of FIG. Lt; RTI ID = 0.0 > 154 < / RTI >

The second electrode pad 145 'may be disposed below a portion of the lower surface of the second electrode 140a exposed by the first insulating layer 152a and may be connected to the exposed portion of the second electrode 140a Or may be contacted.

The first electrode pad 135 'is disposed under the first insulating layer 152a and can be prevented from being in electrical contact with the second conductive semiconductor layer 116 by the first insulating layer 152a.

For example, in order to facilitate connection with the first electrode 130-1, the first electrode pad 135 'may be adjacent to a portion where the first insulating layer 152a and the second insulating layer 154a meet, Lt; / RTI >

The description of the first electrode pad 135 may be applied to the first electrode pad 135 'as shown in FIG.

The passivation layer 124a is disposed on the upper surface of the first conductivity type semiconductor layer 112. [

The first electrode 130-1 is disposed on the passivation layer 124a and the second insulating layer 154a.

One end of the first electrode 130-1 may be in contact with the upper surface of the first conductivity type semiconductor layer 112 through the passivation layer 124a and the other end may be connected to or contacted with the first electrode pad 135 ' .

For example, the first electrode 130-1 may pass through the upper electrode 134a and the passivation layer 124a disposed on the passivation layer 124a to be in contact with the upper surface of the first conductivity type semiconductor layer 112, A contact electrode 136a extending from the lower surface of the first electrode pad 134a and a connection electrode 132a disposed on the second insulation layer 154a and connecting the upper electrode 134a and the first electrode pad 135 ' do.

The upper electrode 134a may be aligned or overlapped with the edge of the light emitting structure 110 in the vertical direction. The upper electrode 134a may be vertically aligned or overlapped with the first electrode pad 135 '.

For example, the contact electrode 135a may be vertically aligned or overlapped with the first electrode pad 135 '. The diameter of the light emitting element 100 in the horizontal direction can be reduced and the size of the light emitting element 100 can be reduced by disposing the contact electrode 135a and the first electrode pad 135 ' .

In FIG. 3, the upper electrode 134 and the first electrode pad 135 are connected by the penetrating electrode 132 passing through the light emitting structure 110, but in FIG. 9, the light emitting structure 110 ' The upper electrode 134a and the first electrode pad 135 'may be connected by the connection electrode 132a disposed on the second insulation layer 154a disposed on the side surface of the structure 110'.

The first electrode 130-1 of FIG. 9 is electrically connected to the upper electrode 134a and the first electrode 130a by a connection electrode 132a disposed on the second insulation layer 154a disposed on the side surface of the light emitting structure 110 ' Since the pad 135 'is connected, the embodiment shown in Fig. 9 can increase the light emitting area and improve the light extraction efficiency.

10 shows a cross-sectional view of a lighting device 200 according to an embodiment.

10, the lighting device 200 includes a substrate 510, a body 520, at least one light emitting device (e.g., 530-1 to 530-5), and a light transmitting member 540. [

The substrate 510 may be a printed circuit board including the first and second wiring layers 512 and 514 and the insulating layer 515. For example, the substrate 510 may be a flexible circuit substrate.

The first and second wiring layers 512 and 514 may be spaced apart from each other on the substrate 510 and the insulating layer 515 may be disposed on the substrate 510 between the first and second wiring layers 512 and 514. [ So that the first and second wiring layers 512 and 514 can be electrically insulated from each other. Or in other embodiments, the insulating layer 515 may be omitted.

At least one light emitting device (e.g., 530-1 to 530-5) is disposed on the substrate 510 and electrically connected to the first and second wiring layers 512 and 514. At least one light emitting device (e.g., 530-1 to 530-5) may be any one of the light emitting devices 100, 100-1 to 100-3 according to the above-described embodiment.

The body 520 is disposed on the substrate 510 and reflects light emitted from at least one light emitting device (e.g., 530-1 to 530-5).

For example, the body 520 has a cavity, and at least one light emitting device (e.g., 530-1 to 530-5) may be disposed in the cavity.

For example, the body 520 may include a number of cavities corresponding to the number of light emitting elements, and each corresponding one of the light emitting elements may be disposed in each of the cavities.

The body 520 may also have a partition 520a surrounding the periphery of at least one light emitting device (e.g., 530-1 through 530-5). The side surface of the barrier rib 520 may be an inclined surface inclined with respect to the upper surface of the substrate 510 and may reflect light emitted from at least one light emitting device (e.g., 530-1 to 530-5).

10, the number of light emitting elements is five, but the present invention is not limited thereto. When the illumination device 200 includes a plurality of light emitting devices, the illumination device may be implemented as a light emitting module.

For example, in another embodiment, the number of the light emitting devices may be one, and the body 520 may have one cavity in which the light emitting devices are disposed. Can be implemented.

For example, when the illumination device 200 includes a plurality of light emitting devices, and the plurality of light emitting devices generate blue light, red light, or green light, the light source may be implemented as a light source of a display device that displays an image.

Since the light emitting devices according to the embodiments can reduce the thickness, the display device including the same can reduce the size, for example, the thickness.

A typical horizontal light emitting device includes a growth substrate (for example, a sapphire substrate), but the light emitting devices (for example, 530-1 to 530-5) of the embodiment do not include a growth substrate and can be reduced in thickness.

In the general vertical type light emitting device, the first electrode pad and the second electrode pad are disposed on the opposite sides of the light emitting structure, whereas the light emitting elements (e.g., 530-1 to 530-5) Since the electrode pads 135 and 145 are located on the same side of the light emitting structure, the thickness can be reduced.

The light transmitting member 540 is disposed in the cavity of the body 520 to surround the light emitting elements 530-2 to 530-5. The light transmissive member 540 can prevent breakage of the light emitting element due to an external impact and can prevent discoloration of the light emitting elements 530-2 to 530-5 due to moisture. In other embodiments, the light-transmissive member 540 may be omitted.

11 is a top plan view of a light emitting device 1000 according to another embodiment, Fig. 12 is a bottom plan view of the light emitting device 1000 shown in Fig. 11, and Fig. 13 is a cross- Sectional view of the light-emitting device 1000 in the AB direction, and Fig. 14 is a cross-sectional view of the light-emitting device 1000 shown in Figs. 11 and 12 in the CD direction.

11 to 14, the light emitting device 1000 includes a light emitting structure 1110, a passivation layer 1120, a first electrode 1130, a second electrode 1140, a second electrode pad 1145 ), And an insulation layer (1150).

The light emitting structure 1110 is disposed between the first conductivity type semiconductor layer 1112 and the second conductivity type semiconductor layer 1116 and between the first conductivity type semiconductor layer 1112 and the second conductivity type semiconductor layer 1116 And an active layer 1114. For example, the light emitting structure 1110 may have a structure in which a first conductivity type semiconductor layer 1112, an active layer 1114, and a second conductivity type semiconductor layer 1116 are sequentially arranged from top to bottom.

For example, the diameter of the light emitting structure 1110 may decrease from the first conductivity type semiconductor layer 1112 toward the second conductivity type semiconductor layer 1116, and the side surface of the light emitting structure 1110 may have a reverse However, the present invention is not limited thereto.

The structure and composition of the light emitting structure 110 of FIG. 3 can be applied to the light emitting structure 1110 of FIG.

Unlike a general light emitting device having a light transmitting substrate or a supporting substrate, the light emitting device 1000 according to the embodiment does not have a light transmitting substrate or a supporting substrate. Because the chip size (for example, diameter) or volume of the light emitting device is reduced, the thickness or size of an application in which the light emitting device according to the embodiment is used, for example, a display device or the like can be reduced.

The first electrode 1130 is disposed on the light emitting structure 1110 and has one end contacting the first conductive semiconductor layer 1112 and the other end extending toward the side of the light emitting structure 1110, As shown in FIG.

The passivation layer 1120 is disposed on the first conductivity type semiconductor layer 1112. The passivation layer 1120 may be disposed between the upper surface of the first conductive type semiconductor layer 1112 and the lower surface of the first electrode 1130. Also, for example, the passivation layer 1120 may also be disposed on the second insulating layer 1154.

For example, the first electrode 1130 includes an upper electrode 1134, a contact electrode 1136, and an extension electrode 1132.

The upper electrode 1134 is disposed on the passivation layer 1120 disposed on the first conductive type semiconductor layer 1112 and the second insulating layer 1154.

11, the upper electrode 1134 may be disposed at the edge of the first conductivity type semiconductor layer 1121, for example, adjacent to an edge of the upper surface of the first conductivity type semiconductor layer 1112, but is not limited thereto And the center of the upper surface of the first conductivity type semiconductor layer 1112 may be disposed.

The planar shape of the upper electrode 1134 shown in FIG. 11 is rectangular, but not limited thereto. In another embodiment, the planar shape of the upper electrode 1134 may be circular, oval, or polygonal.

The contact electrode 1136 extends from the lower surface of the upper electrode 1134 and contacts the upper surface of the first conductive type semiconductor layer 1112 through the passivation layer 1120.

For example, the contact electrode 1136 may extend from the lower surface of the upper electrode 1134 toward the upper surface of the first conductive type semiconductor layer 1112, and may be in ohmic contact with the upper surface of the first conductive type semiconductor layer 1112 have.

The contact electrode 1136 may be spaced apart from the portion where the upper electrode 1134 and the extended electrode 1132 meet. The current flowing through the extension electrode 1132 may be dispersed in the light emitting structure 1110 to improve the light efficiency of the light emitting device 1000.

One end of the extension electrode 1132 is connected to one end of the upper electrode 1134 and the other end extends from the upper electrode 1134 to below the lower surface of the second conductivity type semiconductor layer 1116 of the light emitting structure 1110.

The extension electrode 1132 may include a first extension portion 1132a and a second extension portion 1132b connected to the first extension portion 1132a.

The first extension portion 1132a may be connected to the upper electrode 1134 and may be in contact with the edge of the passivation layer 1120.

The second extension part 1132b is connected to the first extension part 1132a at one end and extends in the direction from the first conductivity type semiconductor layer 1112 toward the second conductivity type semiconductor layer 1116, In the vertical direction. Also, the second extension part 1132b does not overlap with the contact electrode 1136 in the vertical direction. And may be perpendicular to the upper surface of the first conductive semiconductor layer 1112 in the vertical direction.

The lower end of the second extension portion 1132b may extend to a lower end of the light emitting structure 1110, for example, below the lower surface of the second conductivity type semiconductor layer 1116. [ For example, the lower surface of the second extension portion 1132b may extend to the lower end of the light emitting structure so as to be located on the same plane as the lower surface of the second electrode pad 1145. This is for die bonding or flip chip bonding with a package body, submount, or substrate.

In FIG. 3, the passivation layer 1120 may expose a portion of the top surface of the first conductivity type semiconductor layer 1112.

The material of the passivation layer 1120 may be the same as the material of the passivation layer 120 of FIG. have.

Fig. 15A shows an embodiment of the first electrode 1130 shown in Fig.

Referring to FIG. 15A, the first electrode 1130 may include an upper electrode 1134, a contact electrode 1136, and an extension electrode 1132.

For example, the contact electrode 136 may be in the form of a straight line, but is not limited thereto, and may be circular, elliptical, or polygonal depending on the planar shape of the upper electrode 1134.

Fig. 15B shows another embodiment 1130a of the first electrode 1130 shown in Fig.

Referring to FIG. 15B, the first electrode 1130a may include an upper electrode 1134, a plurality of contact electrodes 1136-1 to 1136-4 disposed apart from each other, and an extension electrode 1132 .

Each of the plurality of contact electrodes 1136-1 to 1136-4 is in contact with or connected to the lower surface of the upper electrode 1134 and contacts the upper surface of the first conductivity type semiconductor layer 1112 through the passivation layer 1120 . For example, the shape of the plurality of contact electrodes 1136-1 to 1136-4 may be a rectangular shape, but is not limited thereto, and may be a circular shape or a polygonal shape.

The second electrode 1140 is disposed under the light emitting structure 1110 and contacts the second conductive type semiconductor layer 1116. For example, the second electrode 1140 may be disposed on the lower surface of the light emitting structure 1110, for example, on the lower surface of the second conductivity type semiconductor layer 1116.

The second electrode 1140 is disposed between the second conductive type semiconductor layer 1116 and the second electrode pad 1145 and the second electrode 1140 and the second conductive type semiconductor layer 1116 may be in ohmic contact with each other. have.

The material and configuration of the first electrode 1130, the second electrode 1140, the first electrode pad 1135 and the second electrode pad 1145 are the same as those of the first electrode 130, the second electrode 140 ), The first electrode pad 135, and the second electrode pad 145 may be applied.

The insulating layer 1150 is disposed on at least one of a side surface and a bottom surface of the light emitting structure 1110.

The insulating layer 1150 may be disposed under the second conductive type semiconductor layer 1116.

For example, the insulating layer 1150 may include a first insulating layer 1152 disposed on the lower surface of the second conductive type semiconductor layer 1116.

For example, the first insulating layer 1152 may be disposed in a remaining region of the lower surface of the second conductive type semiconductor layer 1116 except for a region where the second electrode 1140 is disposed. The first insulating layer 1152 may be disposed in the edge region of the lower surface of the second electrode 1140 disposed on the lower surface of the second conductivity type semiconductor layer 1116, It is possible to expose a part of the lower surface.

The second electrode pad 1145 may be disposed under the first insulating layer 1152 and the second electrode 1145.

The lower surface of the second electrode pad 1145 and the lower surface of the second extension portion 1132b are formed in the same plane (for example, the lower surface of the second electrode pad 1145 and the lower surface of the second extension portion 1132b) for die bonding with a package body, a submount, 305). ≪ / RTI >

The second electrode pad 1145 may be disposed under a portion of the lower surface of the second electrode 1140 exposed by the first insulating layer 1152 and may be connected to the exposed portion of the second electrode 1140 Can be contacted.

For example, the first insulating layer 1152 may cover only a part of the upper side of the side surface of the second electrode pad 1145. The second electrode pad 1145 may be disposed under the lower surface of the second electrode 1140 exposed by the first insulating layer 1152. The edge of the second electrode pad 1145 may extend horizontally to the bottom of the first insulating layer 1152 so as to be in contact with the bottom surface of the first insulating layer 1152. However, .

For example, the second electrode pad 1145 may be convexly curved in the direction from the second conductivity type semiconductor layer 1116 to the first conductivity type semiconductor layer 1112, but the present invention is not limited thereto.

The lower surface of the second electrode pad 1145 and the lower surface of the second extension portion 1132b may be formed to have the same shape as that of the first insulation layer, They may be located on the same plane.

The insulating layer 1150 may further include a second insulating layer 1154 disposed on a side surface of the light emitting structure 1110. For example, the second insulating layer 1154 may be disposed on a side surface of the first conductive semiconductor layer 1112, a side surface of the active layer 1114, and a side surface of the second conductive type semiconductor layer 1116.

For example, one end of the second insulating layer 1154 may extend to the edge of the upper surface of the first conductive type semiconductor layer 1112 and may be connected to or contacted with the passivation layer 1120, And the other end may be connected to or in contact with the first insulating layer 1152.

The material of the insulating layer 1150 may be the same as the insulating layer 150 of FIG.

13, the second extension 1132b of the first electrode 1130 includes a second insulating layer 1154 located on the sides of the active layer 1114 and the second conductivity type semiconductor layer 1116, As shown in FIG.

 In addition, the lowermost end of the second extension part 1132b may be spaced apart from the first and second insulating layers 1152 and 1154. This is to prevent an electrical short between the second extension part 1132b and the second electrode pad 1145 when bonding with a package body, a submount, or a substrate.

For example, the second extension part 1132b may be extended to be inclined with respect to the vertical line 1301, the vertical line 1301 may be perpendicular to the upper surface of the first conductive type semiconductor layer, the first extension part 1132a, 2 extension part 1132b.

For example, the internal angle [theta] between the vertical line 1301 and the inner surface of the second extending portion 1132b may be 0 or more and less than 30 [deg.]. the distance between the lower end of the second extending portion 1132b and the second electrode pad 1145 is short, and electrical short-circuiting may occur between the two. Further, when? Is 30 or more, the formation of the second extension part 1132b is not easy and can be broken.

the inner surface of the second extension 1132b is parallel to the vertical line 301 when θ is 0 ° and the inner surface of the second extension 1132b is the right side of the vertical line 301 when θ is a positive number, In the case where? Is negative, the inner side of the second extension 1132b may be located on the left side 301 of the vertical line with respect to the vertical line 301.

For example, in order to stably secure short-circuit between the lower end of the second extension part 1132b and the second electrode pad 1145 and to prevent breakage of the second extension part 1132b, the vertical line 1301, And the inner angle &thetas; between the inner wall 1132a and the outer wall 1132b may be 0 DEG to 15 DEG. Also, for example, &thetas; may be more than 5 DEG and less than 15 DEG.

For example, the distance D1 between the second extension 1132b and the second insulation layer 1154 may increase from the first conductivity type semiconductor layer 1112 toward the second conductivity type semiconductor layer 1116 .

The distance D2 between the lowermost end of the second extension part 1132b and the second electrode pad 1145 may be 2 nm to 5 nm.

When D2 is less than 2 nm, there is a risk of electrical short circuit between the second extension portion 1132b and the second electrode pad 1145 during bonding with a package body, a submount, or a substrate or the like .

When D2 exceeds 5 nm, the connection between the upper electrode 1134 and the extended electrode 1132 of the first electrode 1130 may be broken or the extended electrode 1132 may be broken.

16 is a cross-sectional view of a light emitting device 1000-1 according to another embodiment. The same reference numerals as those in FIG. 13 denote the same components, and a description of the same components will be simplified or omitted.

The passivation layer 1120a of FIG. 13 exposes a part of the upper surface of the first conductivity type semiconductor layer 1112. [ On the other hand, the passivation layer 1120a of the light emitting device 1000-1 of FIG. 16 is formed of the same material as the first conductive semiconductor layer 1112 except for a part of the upper surface of the first conductive type semiconductor layer 1112 exposed for contact with the contact electrode 1136 The upper surface of the one conductivity type semiconductor layer 1112 may not be exposed.

For example, the passivation layer 1120a may entirely cover the upper surface of the first conductivity type semiconductor layer 1112 except for a part of the upper surface of the first conductivity type semiconductor layer 1112 in contact with the contact electrode 1136 The second insulating layer 1154, or the like.

17A is a top plan view of the light emitting device 1000-2 according to another embodiment, and FIG. 17B is a bottom plan view of the light emitting device 1000-2 shown in FIG. 17A. 17A and 17B may be an embodiment including the passivation layer 1120a of FIG. 16, but the present invention is not limited thereto, and the same can be applied to the light emitting device 1000 shown in FIG.

17A and 17B, the first electrode 1130a is disposed adjacent to one side (e.g., 1110-3) of the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110 can do.

18A is a top plan view of the light emitting device 1000-3 according to another embodiment, FIG. 18B is a bottom plan view of the light emitting device 1000-3 shown in FIG. 8A, FIG. 19 is a cross- Sectional view of the light emitting device 1000-3 shown in Fig.

18A, 18B and 19 may be embodiments including the passivation layer 1120a of FIG. 16, but are not limited thereto, and may be similarly applied to the light emitting device 100 shown in FIG.

18A, 18B, and 19, the light emitting device 1000-3 may have two first electrodes 1130b1 and 1130b2.

For example, the 1-1 electrode 1130b1 may be positioned adjacent to the first side (e.g., 1110-1) of the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110, The 1-2 electrode 1130b2 is connected to a second side (e.g., 1110-2) facing the first side (e.g., 1110-1) of the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110 ). ≪ / RTI >

The structure of each of the 1-1 and 1-2 electrodes 1130b1 and 1130b2 may be the same as that of the first electrode 1130 of FIG. 13 or FIG. 19 described above.

Compared with the embodiment of Figs. 17A and 17B, the light emitting device 1000-3 includes two first electrodes, thereby improving the current dispersion efficiency.

18A, 18B, and 19 illustrate two first electrodes, but are not limited thereto. In other embodiments, the number of first electrodes may be three or more. In other embodiments, the first electrodes may also be disposed on opposite sides of the side surfaces 1110-1 through 1110-4 on the top surface of the light emitting structure 1110. [

20A is a top plan view of the light emitting device 1000-4 according to another embodiment, and FIG. 20B is a bottom plan view of the light emitting device 1000-4 shown in FIG. 20A. 20A and 20B may be an embodiment including the passivation layer 1120a of FIG. 16, but the present invention is not limited thereto, and the same can be applied to the light emitting device 1000 shown in FIG.

Referring to FIGS. 20A and 20B, the light emitting device 1000-4 may have a first electrode 1130c positioned on the edge region of the upper surface of the light emitting structure 1110. FIG.

For example, the first electrode 1130c may be located at the edge adjacent to the side surfaces 1110-1 to 1110-4 on the upper surface of the light emitting structure 1110. [ Compared with the light emitting devices 1000-1 to 1000-3, the embodiment shown in Figs. 20A and 20B is different from the light emitting devices 1000-1 to 1000-3 in that the first electrode 1130c is located at the edge adjacent to the side surfaces of the upper surface of the light emitting structure , The light efficiency according to the current dispersion can be further improved.

In other embodiments, the first electrode may be disposed at various locations depending on the arrangement and configuration of the package body, submount, or conductive layer of the substrate being bonded to the first electrode.

The light emitting devices 1000 and 1000-1 to 1000-4 shown in FIGS. 13, 16, 19, 17A and 17B and FIGS. 20A and 20B have chip sizes (for example, Lt; / RTI > In the light emitting device having a diameter of less than 100 microns, it is not easy to form a bonding pad for wire bonding.

One end of the second extension portion 1132b of the first electrode 1130 that is die-bonded or flip-chip bonded to the package body, submount, or conductive layer of the substrate is placed apart from the light emitting structure , The embodiment can easily implement electrode pads for flip chip bonding or die bonding on the same side of the light emitting structure 1110 having a small size area.

21 shows a cross-sectional view of a lighting device 1200 according to yet another embodiment.

21, illumination device 1200 includes a substrate 1510, a body 1520, at least one light emitting device (e.g., 1530-1 through 1530-5), and a light transmissive member 1540.

The substrate 1510 may be a printed circuit board including first and second wiring layers 1512 and 1514 and an insulating layer 1515. [ For example, the substrate 1510 may be a flexible circuit substrate.

The first and second wiring layers 1512 and 1514 may be spaced apart from each other on the substrate 1510 and the insulating layer 1515 may be formed on the substrate 1510 between the first and second wiring layers 1512 and 1514 So that the first and second wiring layers 1512 and 1514 can be electrically insulated from each other. Or in other embodiments the insulating layer 1515 may be omitted.

At least one light emitting device (e.g., 1530-1 to 1530-5) is disposed on the substrate 1510, and is electrically connected to the first and second wiring layers 1512 and 1514. At least one light emitting device (e.g., 1530-1 to 1530-5) may be any one of the light emitting devices 1000, 1000-1 to 1000-4 according to the above-described embodiment.

The description of the body 520 and the light-transmissive member 540 in Fig. 10 can be applied to the body 1520 and the light-transmissive member 1540 in Fig.

In Fig. 21, the number of light emitting elements is five, but the present invention is not limited thereto. When the illumination device 1200 includes a plurality of light emitting devices, the illumination device may be implemented as a light emitting module.

Also, for example, in another embodiment, the number of light emitting elements may be one, and the body 1520 may have one cavity in which the light emitting elements are disposed, and the lighting apparatus 1200 according to the embodiment may be a light emitting element package Can be implemented.

For example, when the illumination device 1200 includes a plurality of light emitting devices, and the plurality of light emitting devices generate blue light, red light, or green light, the light may be implemented as a light source of a display device that displays a light emitting module or an image .

Since the light emitting devices according to the embodiments can reduce the thickness, the light emitting module or the display device including the same can reduce the size, for example, the thickness.

A typical horizontal light emitting device includes a growth substrate (e.g., sapphire substrate), but the light emitting devices (e.g., 1530-1 to 1530-5) of the embodiment do not include a growth substrate and can be reduced in thickness.

In the general vertical type light emitting device, the first electrode pad and the second electrode pad are disposed on opposite sides of the light emitting structure, whereas the light emitting devices (e.g., 1530-1 to 1530-5) 1145 of the first electrode 1130 and the second extension 1132b of the first electrode 1130 are located on the same side of the light emitting structure 1110.

22 is a top plan view of the light emitting device 2000 according to the embodiment, Fig. 23 is a bottom plan view of the light emitting device 2000 shown in Fig. 22, and Fig. (2000) in the AB direction.

22 to 24, the light emitting device 2000 includes a plurality of light emitting cells 2100-1 and 2100-2, a passivation layer 2120, a first electrode 2130, a first electrode pad Second electrodes 2140-1 and 2140-2, second electrode pads 2145-1 and 2145-2, and an insulation layer 2150. The second electrodes 2140-1 and 2140-2 are electrically connected to each other.

Each of the plurality of light emitting cells 2100-1 and 2100-2 is separated or separated from each other and includes the light emitting structures 2110-1 and 2110-2.

Each of the light emitting structures 2110-1 and 2110-2 of the plurality of light emitting cells 2100-1 and 2100-2 includes first conductive semiconductor layers 2112-1 and 2112-2, 2116-1 and 2116-2 disposed between the first conductivity type semiconductor layers 2112-1 and 2112-2 and the second conductivity type semiconductor layers 2116-1 and 2116-2, , 2114-2.

For example, each of the light emitting structures 2110-1 and 2110-2 may include first conductive semiconductor layers 2112-1 and 2112-2, active layers 2114-1 and 2114-2, Type semiconductor layers 2116-1 and 2116-2 are sequentially arranged.

Unlike a general light emitting device having a light transmitting substrate or a supporting substrate, the light emitting device 1000 according to the embodiment does not have a light transmitting substrate or a supporting substrate. Because the chip size (for example, diameter) or volume of the light emitting device is reduced, the thickness or size of an application in which the light emitting device according to the embodiment is used, for example, a display device or the like can be reduced.

The description of the composition of the light emitting structure 2110-1 of FIG. 3 can be applied to the light emitting structures 2110-1 and 2110-2 of FIG.

For example, the active layers 2114-1 and 2114-2 of the plurality of light emitting cells 2100-1 and 2100-2 may generate any one of red light, green light, and blue light, but the present invention is not limited thereto, Or may generate ultraviolet rays.

Each of the plurality of light emitting cells 2100-1 and 2100-2 may generate light having a different wavelength range, but is not limited thereto.

For example, the first light emitting cell 2100-1 can generate any one of red light, green light, and blue light, and the second light emitting cell 2100-2 can emit any one of red light, green light, and blue light .

When the plurality of light emitting cells 2100-1 and 2100-2 generate light having a wavelength in a different range, the composition of the light emitting structures of the plurality of light emitting cells 2100-1 and 2100-2 may be different from each other have.

For example, the composition of the first conductivity type semiconductor layers 2112-1 and 2112-2 of the plurality of light emitting cells 2100-1 and 2100-2, the composition of the second conductivity type semiconductor layers 2116-1 and 2116-2 ) Or the composition of the active layers 2114-1 and 2114-2 may be different from each other.

In another embodiment, each of the plurality of light emitting cells 2100-1 and 2100-2 may generate light having the same wavelength range with respect to each other. For example, each of the plurality of light emitting cells 2100-1 and 2100-2 may generate any one of red light, green light, and blue light.

The first electrode 2130 is disposed between the light emitting cells 2100-1 and 2100-2 which are spaced apart from each other and penetrates or passes through the insulating layer 2150 disposed below the light emitting cells 2110-1 and 2110-2 do.

The first electrode 2130 is located on one surface of the light emitting structure 2110 of each of the plurality of light emitting cells 2100-1 and 2100-2 and is formed on the upper surface of the light emitting cells 2100-1 and 2100-2, 2) of the light emitting structures 2110. The light emitting structures 2110 of FIG.

A plurality of light emitting cells 2110-1 and 2110-2 are formed by through grooves or through trenches 2301 penetrating the first conductivity type semiconductor layer 2112, the active layer 2114 and the second conductivity type semiconductor layer 2116. [ 2 may be spaced apart or separated from each other.

One end of the first electrode 2130 is in contact with the first conductivity type semiconductor layers 2112-1 and 2112-2 of the adjacent light emitting cells 2100-1 and 2100-2.

The other end of the first electrode 2130 disposed between the plurality of light emitting cells 2100-1 and 2100-2 is exposed to the other surface of the light emitting structure 2110 and connected to the first electrode pad 2135. [

For example, the first electrode 2130 may be formed on the upper surfaces of the first conductivity type semiconductor layers 2112-1 and 2112-2 of the plurality of light emitting cells 2100-1 and 2100-2 and the upper surfaces of the light emitting cells 2100-1 and 2100-2, 2100-2 and 2100-2, and one end of the first electrode 2130 may be disposed between the light emitting cells 2100-1 and 2100-2, And the other end of the first electrode 2130 can be in contact with the upper surface of each of the first conductivity type semiconductor layers 2112-1 and 2112-2 that is disposed below the light emitting cells 2100-1 and 2100-2 Layer 2150, and may be exposed to the outside of the insulating layer 2150.

The passivation layer 2120 is formed between the first electrode 2130 and the upper surfaces of the first conductivity type semiconductor layers of the light emitting cells 2100-1 and 2100-2 and between the first electrode 2130 and the light emitting structures 2110- And 2110-2 between the first electrode 2130 and the side surfaces of the light emitting structures 2110-1 and 2110-2 of the light emitting cells 2100-1 and 2100-2, Thereby preventing insufficient contact, and insulating the two.

For example, the passivation layer 2120 may include a first passivation layer 2122 disposed between the first electrode 2130 and the side surfaces of the light emitting structures 2110-1 and 2110-2, and a light emitting cell 2100-1, And a second passivation layer 2124 disposed on the upper surfaces of the first conductive type semiconductor layers 2112-1 and 2112-2.

The first electrode 2130 includes a penetrating electrode 2132, an upper electrode 2134, and a contact electrode 2136.

The upper electrode 2134 is disposed on the second passivation layer 2124 of each of the light emitting cells 2100-1 and 2100-2.

The penetrating electrode 2132 is disposed between opposing side surfaces of the light emitting structures 2110-1 and 2110-2 of the light emitting cells 2100-1 and 2100-2, And the other end of the penetrating electrode 2132 penetrates through the insulating layer 2150 disposed under the light emitting cells 2100-1 and 2100-2 and is connected to the first electrode pad 2135, As shown in FIG.

The diameter of the penetrating electrode 2132 is larger than the diameter of the second conductivity type semiconductor layers 2116-1 and 2116-2 in the first conductivity type semiconductor layers 2112-1 and 2112-2 of the light emitting cells 2100-1 and 2100-2 However, the diameter of the penetrating electrode 2132 may be increased or decreased in other embodiments.

Although FIG. 24 illustrates two divided light emitting cells, one penetrating electrode 2132, and one first electrode pad 2135, the present invention is not limited thereto. In another embodiment, three or more divided light emitting cells, Two or more through electrodes corresponding thereto, and first electrode pads. In this case, the two or more penetrating electrodes may be spaced from each other. Also, the two or more first electrode pads may be spaced apart from each other or connected to each other.

The upper electrode 2134 is electrically connected to the first conductivity type semiconductor layers 2112-1 and 2112-2 of the light emitting cells 2100-1 and 2100-2 located adjacent to the penetrating electrode 2132 and the penetrating electrode 2132. [ As shown in FIG. The lower surface of the upper electrode 2134 is connected to or contacts with one end of the penetrating electrode 2132.

One end of the contact electrode 2136 is connected to the upper electrode 2134 and the other end of the contact electrode 2136 is in contact with the upper surface of the first conductive type semiconductor layer 2112 through the second passivation layer 2124.

For example, the contact electrode 2136 may extend in the direction of the upper surface of the first conductivity type semiconductor layer 2112 from the lower surface of the upper electrode 2134, and may be in ohmic contact with the upper surface of the first conductivity type semiconductor layer 2112 have.

For example, the first electrode 2130 may include as many contact electrodes as the number of the light emitting cells 2100-1 and 2100-2, but is not limited thereto.

For example, the contact electrode 2136 may be spaced apart from a portion where the penetrating electrode 2132 and the upper electrode 2134 are in contact with or connected to each other, and the contact electrode 2136 may be located at a portion where the penetrating electrode 2132 and the upper electrode 2134 are in contact with or connected to each other And the second passivation layer 2124 may be located between the contact electrode 2136 and the contact electrode 2136.

The contact electrode 2136 is separated by the second passivation layer 2124 from the portion where the penetrating electrode 2132 and the upper electrode 2134 are in contact with or connected to each other so that the current flowing through the penetrating electrode 2132 is Emitting cells 2100-1 and 2100-2, respectively. Accordingly, the second passivation 2124 may be dispersed in each of the light emitting cells 2100-1 and 2100-2 to improve the light efficiency of the light emitting device 2000. [

In FIG. 24, the second passivation layer 2124 may expose a portion of the top surface of the first conductivity type semiconductor layer 2112 of each of the light emitting cells 2100-1 and 2100-2. The material of the passivation layer 2120 may be the same as the passivation layer 120 of FIG.

For example, the embodiment of FIG. 24 can generate two lights having different wavelength ranges, and the two adjacent light emitting cells 2100-1 and 2100-2 are the first electrode 2130, which is an n-type electrode, And the first electrode pad 2135, which is an n-type electrode pad, can be shared with each other.

Fig. 25A shows an embodiment of the first electrode 2130 shown in Fig.

25A, the first electrode 2130 includes an upper electrode 2134, a penetrating electrode 2132 connected to the upper electrode 2134, a first contact electrode 2136 located at one side of the penetrating electrode 2132, -1), and a second contact electrode 2136-2 located on the other side of the penetrating electrode 2132. [

The first contact electrode 2136-1 is located on the left side of the penetrating electrode 2132 and penetrates the second passivation layer 2124 to form the first conductive semiconductor layer 2100-1 of the first light emitting cell 2100-1 2112-1.

The second contact electrode 2136-2 is located on the right side of the penetrating electrode 2132 and penetrates the second passivation layer 2124 to form the first conductive semiconductor layer 2112- 2).

Each of the first and second contact electrodes 2136-1 and 2136-2 may be in the form of a straight line, but is not limited thereto.

FIG. 25B shows another embodiment 2130a of the first electrode 2130 shown in FIG.

25B, the first electrode 2130a includes an upper electrode 2134, a penetrating electrode 2132 connected to the upper electrode 2134, a plurality of first penetrating electrodes 2132 located at one side of the penetrating electrode 2132, And a plurality of second penetrating electrodes 2136b-1 to 2136b-6 located on the other side of the penetrating electrode 2132. The first through-hole electrodes 2136a-1 to 2136a-6 and the second through-

The plurality of first contact electrodes 2136a-1 to 2136a-6 are spaced apart from each other on the left side of the penetrating electrode 2132 and extend through the second passivation layer 2124 to form the first light emitting cell 2100-1. Of the first conductivity type semiconductor layer 2112-1.

The second contact electrodes 2136b-1 to 2136b-6 are located on the right side of the penetrating electrode 2132 and are spaced apart from each other. The second contact electrodes 2136b-1 to 2136b- Of the first conductivity type semiconductor layer 2112-2.

The planar shape of each of the first contact electrodes 2136a-1 to 2136a-6 and the second contact electrodes 2136b-1 to 2136b-6 may be circular, elliptical, or polygonal (e.g., However, the present invention is not limited thereto, and may be embodied in various shapes.

The first electrode 2130 may be commonly connected to the first conductivity type semiconductor layers 2112-1 and 2112-2 of the plurality of light emitting cells 2100-1 and 2100-2.

The first electrode pad 2135 is disposed under the insulating layer 2150 disposed under the light emitting structure 2110 and is connected to or in contact with the other end of the penetrating electrode 2132 of the first electrode 2130.

For example, the first electrode pad 2135 may be disposed under the first insulating layer 2152 and may connect or contact with the other end of the penetrating electrode 2132 passing through the first insulating layer 2152.

For example, the center of the first electrode pad 2135 may be aligned with the center of the penetrating electrode 2132, but is not limited thereto.

The thickness of the first electrode pad 2135 may be thicker than the thickness of the upper electrode 2134 of the first electrode 2130 for bonding, but the present invention is not limited thereto.

As shown in FIG. 23, the first electrode pad 2135 may have a rectangular shape, but the present invention is not limited thereto. In other embodiments, the first electrode pad 2135 may have a circular shape, an elliptical shape, or a polygonal shape.

Each of the second electrodes 2140-1 and 2140-2 is electrically connected to one of the corresponding one of the second conductivity type semiconductor layers 2116-1 and 2116-2 of the plurality of light emitting cells 2100-1 and 2100-2 And is in contact with the corresponding second conductivity type semiconductor layers 2116-1 and 2116-2. The plurality of second electrodes 2140-1 and 2140-2 are spaced apart from each other and can be electrically separated.

For example, the second-first electrode 2140-1 may be disposed below the lower surface of the second conductive semiconductor layer 2116-1 of the first light emitting cell 2100-1, and the second conductive semiconductor layer 2116-1.

The second -2 electrode 2140-2 may be disposed below the lower surface of the second conductivity type semiconductor layer 2116-2 of the second light emitting cell 2100-2 and the second conductivity type semiconductor layer 2116- 2).

For example, each of the plurality of second electrodes 2140-1 and 2140-2 may be spaced apart from the other end of the penetrating electrode 2132 passing through the first insulating layer 2152. [

Each of the second electrode pads 2145-1 and 2145-2 is disposed under a corresponding one of the plurality of second electrodes 2140-1 and 2140-2 and is connected to a corresponding one of the plurality of second electrodes 2140-1 and 2140-2, Can be contacted.

For example, each of the second electrode pads 2145-1 and 2145-2 may be located apart from the first electrode pad 2135. [

The material and configuration of the first electrode 2130, the second electrode 2140, the first electrode pad 2135 and the second electrode pad 2145 are the same as those of the first electrode 130, the second electrode 140 ), The first electrode pad 135, and the second electrode pad 145 may be applied.

The insulating layer 2150 is disposed on at least one of a side surface or a bottom surface of the light emitting structures 2110-1 and 2110-2 of the plurality of light emitting cells 2100-1 and 2100-2.

The insulating layer 2150 may be disposed below the second conductivity type semiconductor layer 2116 of each of the plurality of light emitting cells 2100-1 and 2100-2. For example, the insulating layer 2150 may include a first insulating layer 2152 disposed on the lower surface of the second conductivity type semiconductor layer 2116 of each of the plurality of light emitting cells 2100-1 and 2100-2.

For example, the first insulating layer 2152 may be formed on the second conductive type semiconductor layer 2102 of each of the plurality of light emitting cells 2100-1 and 2100-2 except for the region where the second electrodes 2140-1 and 2140-2 are disposed. (2116-1, 2116-2).

For example, the first insulating layer 2152 may be formed on the second conductive type semiconductor layers 2116-1 and 2116-2 of the plurality of light emitting cells 2100-1 and 2100-2, The first electrodes 2140-1 and the second electrodes 2140-2 may be disposed in the edge regions of the lower surfaces of the first and second electrodes 2140-1 and 2140-2.

Each of the second electrode pads 2145-1 and 2145-2 may be disposed below the first insulating layer 2152 to be spaced apart from the first electrode pad 2135. [

The first insulating layer 2152 is formed between the lower surface of the second conductivity type semiconductor layers 2116-1 and 2116-2 of the plurality of light emitting cells 2100-1 and 2100-2 and the first electrode pad 2135 And electrical contact between the second conductivity type semiconductor layers 2116-1 and 2116-2 and the first electrode pad 2135 can be prevented.

The first insulating layer 2152 may be disposed between each of the second electrode pads 2145-1 and 2145-2 and the first electrode pad 2135 and may be disposed between the first electrode pad 2135 and the second electrode 2135. [ It is possible to prevent electrical contact between the pads 2145-1 and 2145-2.

The lower surface of the first electrode pad 2135 and the lower surface of the second electrode pads 2145-1 and 2145-2 are bonded to each other in order to perform die bonding with a package body, a submount, ) May be located on the same plane 305. [

The first electrode pad 2135 may be arranged to be vertically aligned or overlapped with the penetrating electrode 2132. The penetrating electrode 2132 may penetrate or pass through the first insulating layer 2152, ). ≪ / RTI > Here, the vertical direction is a direction from the second conductivity type semiconductor layers 2116-1 and 2116-2 of the light emitting structures 2110-1 and 2110-2 toward the first conductivity type semiconductor layers 2112-1 and 2112-2 Lt; / RTI >

Each of the second electrode pads 2145-1 and 2145-2 may be disposed under a corresponding one of the second electrodes 2140 exposed by the first insulating layer 2152, And can be connected or contacted with one exposed portion.

For example, the first insulating layer 2152 may cover only a part of the upper side of each of the second electrode pads 2145-1 and 2145-2. The edge of each of the second electrode pads 2145-1 and 2145-2 may be in contact with the lower surface of the first insulating layer 2152. [ The edge of each of the second electrode pads 2145-1 and 2145-2 may extend horizontally so as to be positioned below the lower surface of the first insulating layer 2152. However, the present invention is not limited thereto.

For example, each of the second electrode pads 2145-1 and 2145-2 may be convexly bent in a direction from the second conductivity type semiconductor layer 2116 toward the first conductivity type semiconductor layer 2112, But is not limited thereto.

In another embodiment, the first insulating layer entirely covers the side surfaces of each of the second electrode pads 2145-1 and 2145-2, and the lower surface of the first insulating layer, the lower surface of the first electrode pad 2135, The lower surfaces of the electrode pads 2145-1 and 2145-2 may be located on the same plane.

The insulating layer 2150 further includes a second insulating layer 2154 disposed on the outer surfaces of the light emitting structures 2110-1 and 2110-2 of the plurality of light emitting cells 2100-1 and 2100-2 .

For example, the outer surfaces of the light emitting structures 2110-1 and 2110-2 may be other side surfaces of the side surfaces of the light emitting cells 2100-1 and 2100-2, respectively, except opposite side surfaces.

For example, the second insulating layer 2154 may be disposed on the outer surface of the first conductivity type semiconductor layer 2112, the outer surface of the active layer 2114, and the outer surface of the second conductivity type semiconductor layer 2116.

For example, one end of the second insulating layer 2154 may extend to the edge of the upper surface of the first conductive type semiconductor layer 2112, and the other end of the second insulating layer 2154 may extend to the edge of the first insulating layer 2152 Connected or contacted. The material of the insulating layer 2150 may be the same as that of the insulating layer 150.

26A is a cross-sectional view of a light emitting device 2000-1 according to another embodiment. The same reference numerals as in Fig. 24 denote the same components, and a description of the same components will be simplified or omitted.

The passivation layer 2120 of FIG. 24 exposes a part of the upper surface of the first conductivity type semiconductor layer 2112. On the other hand, the passivation layer 2120-1 of the light emitting device 2100-1 of FIG. 26A is formed of a first conductive semiconductor layer 2120-1 exposed to be in contact with the first and second contact electrodes 2136-1 and 2136-2, The upper surface of the first conductivity type semiconductor layer 2112 may not be exposed except for a part of the upper surface of the layer 2112. [

For example, the second passivation layer 2124a of FIG. 26A may include a portion of the upper surface of the first conductive type semiconductor layer 2112 exposed to be in contact with the first and second contact electrodes 2136-1 and 2136-2 The first conductive semiconductor layer 2112 may completely cover the upper surface of the first conductive semiconductor layer 2112 and may be connected to or contacted with the second insulating layer 2154. [

FIG. 26B shows a cross-sectional view of a light emitting device 2000-1 'according to another embodiment. The same reference numerals as those in FIG. 26A denote the same components, and a description of the same components will be simplified or omitted.

Referring to FIG. 26B, each of the light emitting cells 2100-1 'and 2100-2' of the light emitting device 2000-1 'generates light having the same wavelength. For example, each of the first and second light emitting cells 2100-1 'and 2100-2' may include a first conductive semiconductor layer 2112-1 ', an active layer 2114-1' The light emitting structure 2110-1 'including the light emitting structure 2116-1', and may emit light of the same wavelength, for example, red light, green light, or blue light.

The light emitting device 2000-1 'may include a phosphor layer 2160 disposed on the second passivation layer 2124a of each of the light emitting cells 2100-1' and 2100-2 '.

For example, the phosphor layer 2160 may include at least one of a yellow phosphor, a green phosphor, and a red phosphor, but is not limited thereto.

The phosphor layer 2160 can change the wavelength of light generated from the light emitting cells 2100-1 'and 2100-2'. The light of the light emitting cells 2100-1 'and 2100-2' converted by the phosphor layer 2160 may be light of the same wavelength.

For example, the light emitting cells 2100-1 'and 2100-2' may emit blue light, and the phosphor layer 2160 may include at least one of a red phosphor or a green phosphor, and the light emitting cells 2100-1 ' 2100-2 'can be converted into a red light, a green light, or a white light.

26C shows a cross-sectional view of a light emitting device 2000-1 'according to another embodiment. The same reference numerals as those in Fig. 26B denote the same constituent elements, and a description of the same constituent elements will be simplified or omitted.

Referring to FIG. 26C, the phosphor layer 2160-1 is formed on the second passivation layer 2124a corresponding to any one of the light emitting cells 2100-1 'and 2100-2' (for example, 2100-2 ') .

For example, the phosphor layer 2160-1 may include at least one of a yellow phosphor, a green phosphor, and a red phosphor, but is not limited thereto.

The phosphor layer 2160-1 can change the wavelength of light generated from any one of the corresponding light emitting cells (e.g., 2100-2 '). Accordingly, the light emitting device 2000-1 "can emit light having different wavelengths depending on the light generated by the light emitting cells 2100-1 'and 2100-2' and the type of the phosphor layer 2160-1 .

For example, the light emitting cells 2100-1 'and 2100-2' can emit blue light.

For example, the phosphor layer 2160-1 may include a red phosphor or a green phosphor, and blue light generated by the second light emitting cell 2100-2 'may be converted into red light or green light. Thus, the light emitting device 2000-1 "can simultaneously realize blue light and red light, or simultaneously realize blue light and green light.

In another embodiment, the light emitting cells 2100-1 'and 2100-2' may emit light of different wavelengths. The phosphor layer 2160-1 can be converted into light having a wavelength different from that of the light generated by the light emitting cells 2100-1 'and 2100-2'.

For example, the first light emitting cell 2100-1 'may emit blue light, the second light emitting cell 2100-2' may emit green light, and the phosphor layer 2160-1 may include a red phosphor And the green light of the second light emitting cell can be converted into the red light.

FIG. 27A is a top plan view of the light emitting device 2100-2 according to another embodiment, and FIG. 27B is a bottom plan view of the light emitting device 2100-2 shown in FIG. 27A. 27A and 27B may be an embodiment including the second passivation layer 2124a of FIG. 27A, but the present invention is not limited thereto, and the same can be applied to the light emitting device 2100 shown in FIG.

 The embodiment 2000-2 shown in FIGS. 27A and 27B includes first and second light emitting cells 2100a-1 and 2100a-2, a passivation layer (not shown), a first electrode 2130 ' May include an electrode pad 2135 ', second electrodes (not shown), an insulating layer (only the first insulating layer 2152' is shown), and second electrode pads 2145-1 and 2145-2 .

The top surface of the light emitting structure 2110 may include second sides located between the first sides and the first sides. For example, the length of each of the first sides may be greater than the length of each of the second sides.

24 and 26A, the longitudinal direction of the upper electrode 2134 of the first electrode 2130, the longitudinal direction of the first electrode pad 2135, and the longitudinal direction of the second electrode pads 2145-1 and 2145-2 And each of the longitudinal directions may be a direction parallel to the first side of the upper surface of the light emitting structure 2110.

For example, the length of the upper electrode 2134 of the first electrode 2130 in the first direction is longer than the length of the second direction, and the length of the first electrode pad 2135 in the first direction is longer than the length of the second direction And the length of each of the second electrode pads 2145-1 and 2145-2 in the first direction may be longer than the length of the second direction. The first direction may be parallel to the first side of the upper surface of the light emitting structure 2110 and the second direction may be parallel to the second side of the upper surface of the light emitting structure 2110.

On the other hand, the longitudinal direction of the upper electrode 2134 'of the first electrode 2130' of the embodiment 2000-2 shown in FIGS. 27A and 27B, the longitudinal direction of the first electrode pad 2135 ' Each of the longitudinal direction of the second electrode pads 2145-1 'and 2145-2' may be parallel to the second side of the upper surface of the light emitting structure 2110.

For example, the length of the upper electrode 2134 'of the first electrode 2130' in the second direction is longer than the length of the first direction, and the length of the first electrode pad 2135 ' And the length of each of the second electrode pads 2145-1 'and 2145-2' in the second direction may be longer than the length of the first direction.

28A is a top plan view of the light emitting device 2100-3 according to another embodiment, FIG. 28B is a bottom plan view of the light emitting device 2000-3 shown in FIG. 28A, FIG. 29A is a plan view Sectional view taken along the line I-II of the light emitting device 2000-3 shown in FIG. 28B.

Referring to FIGS. 28A, 28B and 29A, the light emitting device 2000-3 includes three light emitting cells 2100b-1 to 2100b-3, a passivation layer 2120b, two first electrodes 2130- The first electrode pads 2135a-1 and 2135a-2, the second electrodes 2140-1 and 2140-2, the second electrode pads 2145-1 to 2145-3, And an insulating layer 2150.

For example, the number of the second electrodes 2140-1 and 2140-2 and the number of the electrode pads 2145-1 to 2145-3 may be equal to the number of the light emitting cells. The number of the first electrodes 2130-1 and 2130-2 may be smaller than the number of the light emitting cells 2100b-1 to 2100b-3, and the number of the first electrode pads 2135a-1 and 2135a- The number may be equal to or less than the number of the first electrodes.

The light emitting cells 2100b-1 to 2100b-3 are spaced apart from each other, and each of the light emitting cells 2100b-1 to 2100b-3 may include the light emitting structures 2110a-1 to 2110a-3. Each of the plurality of light emitting cells 2100b-1 to 2100b-3 may generate light having a different wavelength range, but it is not limited thereto. In other embodiments, light having the same wavelength range may be generated.

For example, the first light emitting cell 2100b-1 may emit red light, the second light emitting cell 2100b-2 may emit green light, and the third light emitting cell 2100b-3 may emit blue light.

Each of the first electrodes 2130-1 and 2130-2 is disposed between the light emitting cells 2100-1 and 2100-2 that are spaced apart from each other and the first electrodes 2130-1 and 2130-2 are disposed below the light emitting cells 2110-1 and 2110-2, Lt; / RTI > Each of the first electrodes 2130-1 and 2130-2 is connected to the first conductivity type semiconductor layers 2112a-1 and 2112a-2 of the adjacent two light emitting cells 2100b-1 and 2100b-2, 2100b2 and 2100b- -2, 2112a-2, and 2112a-3, and may be connected or connected to any one of the first electrode pads.

29A, the first electrode 2130-1 includes a first upper electrode 2134a-1, a first penetrating electrode 2132a-1, and first and second contact electrodes 2136c-1 and 2136c-2. The first and second electrodes 2134a-2 and 2132a-2 and the third and fourth contact electrodes 2136c-3 and 2136c-4, respectively, ).

In FIG. 29A, the first electrodes 2130-1 and 2130-2 are connected to the first conductive semiconductor layers 1112a-1 and 1112a-2, 1112a-2 and 1112a-3 of two adjacent light emitting cells, But it is not limited thereto.

In another embodiment, any one of the first electrodes 2130-1 and 2130-2 (e.g., 2130-1) may be connected to any one of the adjacent two light emitting cells 2100b-1 and 2100b- The other one (e.g., 2130-2) contacts the other of the two adjacent light emitting cells 2100b-1 and 2100b-2 (e.g., 2100b-1 and 2100b- -3) of the first conductivity type semiconductor layer 2112a-3.

The description of the first electrode 2130 and the first electrode pad 2135 in FIG. 24 is similar to that of the first electrodes 2130-1 and 2130-2 and the first electrode pads 2135a- 1, 2135a-2).

The passivation layer 2120b includes a first passivation layer 2122b disposed between the first electrodes 2130-1 and 2130-2 and the side surfaces of the light emitting structures 2110-1 and 2110-2, And a second passivation layer 2124b disposed on the upper surfaces of the first conductivity type semiconductor layers 2112a-1 to 2112a-3, respectively, of the first conductivity type semiconductor layers 2100b-1 to 2100b-3.

The description of the passivation layer 2120 in Fig. 24 can be applied to the passivation layer 2120b as shown in Fig. 29A.

Each of the second electrodes 2140a-1 to 2140a-3 is electrically connected to one of the corresponding one of the second conductivity type semiconductor layers 2116a-1, 2116a-2, or 2116a-3 among the light emitting cells 2100b-1 to 2100b- 3 and is in contact with the corresponding second conductivity type semiconductor layer 2116a-1, 2116a-2, or 2116a-3. The description of the second electrodes 2140-1 and 2140-2 of FIG. 3 may be applied to the second electrodes 2140a-1 to 2140a-3 as shown in FIG. 29A.

Each of the second electrode pads 2145a-1 to 2145a-3 is disposed under a corresponding one of the second electrodes 2140a-1 to 2140a-3, and is connected to any one of the corresponding one of the second electrodes 2140a-1 to 2140a- . The description of the second electrode pads 2145-1 and 2145-2 in Fig. 24 can be applied to the second electrode pads 2145a-1 to 2145a-3 as shown in Fig. 8A.

The insulating layer 2150a is formed on the second conductivity type semiconductor layers 2116a-1 to 2116a-2 of the light emitting cells 2100b-1 to 2100b-3 except for the region where the second electrodes 2140a-1 to 2140a- The first insulating layer 1252a disposed on the lower surface of the lower surface of the light emitting structure 2100b-1 to 2100b-3 and the first insulating layer 1252b disposed on the outer surfaces of the light emitting structures 2110a-1 to 2110a-3 of the light emitting cells 2100b- The second insulating layer 2154a may be formed.

The description of the insulating layer 2150 in Fig. 24 can be applied to the insulating layer 2150a as shown in Fig. 29A.

For example, the embodiment of FIG. 29A can generate three lights having different wavelength ranges, and two adjacent light emitting cells 2100b-1 and 2100b-2, or 2100b-2 and 2100b-3, The first electrodes 2130-1 and 2130-2 and the first electrode pads 2135a-1 and 2135a-2, which are n-type electrode pads, can be shared with each other.

29B shows a cross-sectional view according to another embodiment of the light emitting device 2100-3 shown in Figs. 28A and 28B shown in Fig. 29A in the I-II direction. The same reference numerals as those in FIG. 29A denote the same components, and a description of the same components will be simplified or omitted.

Referring to FIG. 29B, each of the light emitting cells 2100b-1 'to 2100b-3' of the light emitting device 2000-3 'emits light of the same wavelength. For example, each of the first to third light emitting cells 2100b-1 'to 2100b-3' includes a first conductive semiconductor layer 2112a-1 ', an active layer 2114a-1' May include a light emitting structure 2110a-1 'including a light emitting structure 2116a-1', and may emit light of the same wavelength, for example, red light, green light, or blue light.

The light emitting device 2000-1 'includes a second passivation layer 2124b corresponding to at least one of the light emitting cells 2100b-2' and 2100b-3 'of the light emitting cells 2100b-1' to 2100b-2 ' And at least one phosphor layer 2170-1, 2170-2 disposed on the phosphor layer 2170-2.

For example, the phosphor layers 2170-1 and 2170-2 may be spaced apart from each other on the second passivation layer 2124b corresponding to the light emitting cells except at least one of the light emitting cells.

For example, each of the phosphor layers 2170-1 and 2170-2 can convert light generated from the light emitting cells 2100b-1 'to 2100b-2' into light having a different wavelength.

For example, each of the phosphor layers 2170-1 and 2170-2 may include any one of a yellow phosphor, a green phosphor, and a red phosphor, and may include different phosphors.

For example, the light emitting cells 2100b-1 'to 2100b-3' can emit blue light. The first phosphor layer 2170-1 may include a green phosphor and may convert blue light generated by the second light emitting cell 2100b-2 'into green light. The second phosphor layer 2170-2 may include a red phosphor and the blue light generated by the third light emitting cell 2100b-3 may be converted into red light. Accordingly, the light emitting device 2000-3 'can generate both red light, blue light, and green light.

That is, the light emitting device 2000-3 'may emit red light, blue light, and blue light depending on the light generated by the light emitting cells 2100b-1' to 2100b-3 'and the types of the phosphor layers 2170-1 and 2170-2 Green light can be generated.

The light emitting areas of the light emitting cells 2100b-1 to 2100b-3, 2100b-1 'to 2100b-3' in FIGS. 28A, 29A and 29B are the same, but are not limited thereto. 1 to 2100b-3, 2100b-1 'to 2100b-3') may be different from each other. Here, the light emitting area may be an upper surface of the light emitting structure, for example, an upper surface of the first conductivity type semiconductor layer, May be the area of the upper surface.

For example, in consideration of the overall luminosity and luminance, the light emitting cell 2100b-2 'corresponding to the first phosphor layer 2170-1 including the green phosphor or the light emitting cell generating the most sensitive green light, Can be the largest

Further, since the efficiency of red light is further lowered by the phosphor layer compared to the blue light, the light emitting area of the light emitting cell 2100b-3 'corresponding to the second phosphor layer 2170-2 including the red phosphor generates blue light May be larger than the light emitting area of the light emitting cell (e.g., 2100b-1 ').

FIG. 30A is a top plan view of the light emitting device 2100-4 according to another embodiment, and FIG. 30B is a bottom plan view of the light emitting device 2100-4 shown in FIG. 30A.

30A and 30B, the light emitting device 2100-1 includes four light emitting cells 2100c-1 to 2100-4, a passivation layer 2120c, a first electrode 2130 ", a first electrode pad Second electrodes (not shown), second electrode pads 2145b-1 to 2145b-4, and an insulating layer 2150b.

The four light emitting cells 2100c-1 to 2100-4 of the light emitting device 2100-1 can share one first electrode 2130 " and one first electrode pad 2135 ". The upper electrode 2134 "and the first electrode pad 2135" of the first electrode 2130 "may have a cross shape, but are not limited thereto. Hour) may be in the form of a cross, but is not limited thereto.

30C is a top plan view of the light emitting device 2000-4 'according to another embodiment. The same reference numerals as in Fig. 30A denote the same components, and a description of the same components will be simplified or omitted.

The embodiment of FIG. 30C may further include first to third phosphor layers 2180-1 to 2180-3 in the embodiment of FIG. 30A. In the embodiment of FIG. 30A, the light emitting areas of the first to fourth light emitting cells 2100c-1 to 2100c-4 are the same, but in the embodiment of FIG. 30c, the first to fourth light emitting cells 2100c-1 ' -3 ') may be different from each other.

Each of the first to third phosphor layers 2180-1 to 2180-3 may include any one of the first to fourth light emitting cells 2100c-1 'to 2100c-3' (e.g., 2100 to -3 ' Is disposed on the second passivation layer 2120c to correspond to the remaining light emitting cells (e.g., 2100c-1 ', 2100c-2', 2100c-4 ').

Each of the first to fourth light emitting cells 2100c-1 'to 2100c-3' generates light of the same wavelength (e.g., blue light).

For example, the first phosphor layer 2180-1 may include a red phosphor and a green phosphor. Blue light generated by the first light emitting cell 2100c-1 'may be emitted by the first phosphor layer 2180-1 It can be converted into white light.

The second phosphor layer 2180-2 may include a red phosphor and the blue light generated by the second light emitting cell 2100c-2 'may be converted into red light by the second phosphor layer 2180-2 .

The third phosphor layer 2180-3 may include a green phosphor and the blue light generated by the fourth light emitting cell 2100c-4 'may be converted into green light by the third phosphor layer 2180-2 .

The light emitting area of the first light emitting cell 2100c-1 'may be smaller than the light emitting area of each of the second to third light emitting cells 2100c-2' to 2100c-3 '. This is because the white light generated from the first phosphor layer 2180-1 is reflected by the second phosphor layer 2180-2, the blue light generated from the third light emitting cell 2100c-3 ', and the third phosphor layer 2180- 3) is stronger than the white light due to the mixing of green light.

Further, for example, in consideration of the overall visual sensitivity and luminance, the light emitting area of the light emitting cell 2100c-1 'corresponding to the first phosphor layer 2180-1 generating the most sensitive green light may be largest

Further, since the efficiency of the red light is further lowered by the phosphor layer as compared with the blue light, the light emitting area of the light emitting cell 2100c-2 'corresponding to the second phosphor layer 2180-2 including the red phosphor generates blue light May be larger than the light emitting area of the light emitting cell (e.g., 2100c-3 ').

FIG. 31A is a top plan view of the light emitting device 2100-5 according to another embodiment, and FIG. 31B is a bottom plan view of the light emitting device 2100-5 shown in FIG. 31A.

31A and 31B may be the same as those shown in Fig. 29A, and cross-sectional views in the CD direction in Figs. 31A and 31B refer to Fig. 29A. In this case, the first electrodes 2134a-1 and 2134a-2 in FIG. 31A can correspond to the first electrodes 2130-1 and 2130-2 in FIG. 29A, and the passivation layer 2120d in FIG. The passivation layer 2120b of FIG.

The light emitting device 2100-5 shown in FIGS. 31A and 31B includes three light emitting cells 2100d-1 to 2100d-3, a passivation layer 2120d, first electrodes 2130a-1 and 2130a-2, (Not shown), second electrode pads 2145c-1 to 2145c-3, and an insulating layer 2150c. The first electrode pad 2135b, second electrodes (not shown) The second electrodes of the embodiment of Figs. 31A and 31B correspond to the second electrodes 2140a-1 to 2140a-3 of Fig. 29A, but the shapes thereof may be different.

The three light emitting cells 2100d-1 to 2100d-3, the passivation layer 2120d, and the first electrodes 2130a-1 to 2130a-3 may have a structure similar to that described with reference to Figs. 28A and 29A.

In the embodiment 2000-3 of Figs. 28A and 29A, each of the second electrode pads 2145a-1 to 2145a-3 is formed under one of the corresponding one of the light emitting cells 2100b-1 to 2100b-3 . That is, each of the second electrode pads 2145a-1 to 2145a-3 does not overlap in the vertical direction with the non-corresponding light emitting cells 2100b-1 to 2100b-3. Here, the vertical direction may be a direction from the first conductive semiconductor layer of the light emitting cell to the second conductive semiconductor layer.

 On the other hand, in the embodiment 2000-5 of FIG. 31B, each of the second electrode pads 2145c-1 to 2145c-3 is formed under one of the corresponding one of the light emitting cells 2100d-1 to 2100d-3 And at least one of the second electrode pads 2145c-1 to 2145c-3 may extend below any one of the light-emitting cells 2100d-1 to 2100d-3, which are not corresponding to each other.

For example, at least one of the second electrode pads 2145c-1 to 2145c-3 may vertically overlap with a corresponding one of the light emitting cells 2100d-1 to 2100d-3.

In the embodiment of FIGS. 28A, 28B and 29A, the first electrodes 2130-1 and 2130-2 are separated from each other, and the corresponding one of the first electrodes 2130-1 and 2130-2 The first electrode pads 2135a-1 and 2135a-2 connected to any one of them may be separated from each other.

On the other hand, in the embodiment of FIGS. 31A and 31B, the first electrodes 2130a-1 and 2130a-2 are separated from each other, but the first electrodes 2130a-1 and 2130a- And may be commonly connected to the electrode pad 2135b.

For example, the through electrodes (for example, 2132a-1 and 2132a-2 in FIG. 29A) of the first electrodes 2130a-1 and 2130a-2 may be connected in common to the first electrode pad 2135b.

For example, the first electrode pad 2135b extends from the first pad portion 2135b1 and the first pad portion 2135b1, and extends through the through electrodes (e.g., the first electrode pad 2135a) of the first electrodes 2130a-1 and 2130a- And first extension pad portions 2135b2 and 2135b3 connected to or in contact with the first extension pad portions 2132a-1 and 2132a-2.

The first pad portion 2135b1 may be disposed adjacent to any one of the bottom edges of the light emitting structure. For current dispersion, the first pad portion 2135b1 may be insulated from the penetrating electrode and the light emitting structure by an insulating layer 2150c.

Each of the first extension pad portions 2135b2 and 2135b3 may include a first extending portion extending in a direction from the first side to the second side of the lower surface of the light emitting structure. At this time, the first side and the second side may be faces facing each other.

Each of the second electrode pads 2145c-1 to 2145c-3 includes a second pad portion 2145c1, 2145c3, and 2145c5 and a second extension pad portion 2145c2 extending from the second pad portions 2145c1, 2145c3, , 2145c4, 2145c6).

The second pad portions 2145c1, 2145c3, and 2145c5 may be disposed adjacent to the remaining one of the lower edges of the light emitting structure.

For current dispersion, the second pad portions 2145c1, 2145c3, and 2145c5 may be insulated from the second electrodes (2140a-1 to 2140a-3 in FIG. 8A) and the light emitting structure by an insulating layer 2150c.

Each of the second extension pad portions 2145c2, 2145c4, and 2145c6 may be connected to or contact with any one of the second electrodes (2140a-1 to 2140a-3 in FIG. 8A).

Each of the second extension pad portions 2145c2, 2145c4, and 2145c6 may include a second extending portion extending in a direction from the first side to the second side of the lower surface of the light emitting structure, or vice versa.

The first extension portions of the first extension pad portions 2135b2 and 2135b3 and the second extension portions of the second extension pad portions 2145c2, 2145c4, and 2145c6 extend in the direction from the first side to the second side of the lower surface of the light emitting structure And can be alternately arranged in the direction perpendicular to the direction of the arrow.

Since the first electrode pad is used as a common n-type electrode for the light emitting cells 2100d-1 to 2100d-3, the embodiment 2000-5 can easily form electrode pads in the light emitting structure having a small size have. Since the first extension pad portions 2135b2 and 2135b3 and the second extension pad portions 2145c2, 2145c4, and 2145c6 are alternately arranged, the embodiment 2000-5 includes the light emitting device 2000-5 through current dispersion, It is possible to improve the light efficiency.

32A is a top plan view of the light emitting device 2100-6 according to yet another embodiment, Fig. 32B is a bottom plan view of the light emitting device 2100-6 shown in Fig. 32A, Fig. FIG. 33B shows a cross-sectional view in the GH direction of the light emitting device 2000-6 shown in FIG. 32A. FIG.

32A to 33B, the light emitting device 2000-6 includes the light emitting cells 2100e-1 to 2100e-3, the passivation layer 2120e, the first electrodes 2130e1 to 2130e4, the first electrode pad Second electrodes 2140e1 to 21440e3, second electrode pads 2145e1 to 2145e3, and an insulating layer 2150c.

In FIGS. 24, 27A, 28A, 30A, and 31A, there is one upper electrode and a through electrode for connecting or contacting the first conductive semiconductor layers of two adjacent light emitting cells, whereas in FIGS. 32A and 33A The number of upper electrodes and the number of through electrodes connected to or in contact with the first conductivity type semiconductor layers of the two adjacent light emitting cells 2110e-1 and 2110e-2, and 2110e-2 and 2110e-3 are plural ).

Each of the first electrodes (e.g., 2130e1 and 2130e3) that are spaced apart from each other may be commonly connected or contacted with the first conductive type semiconductor layer of two adjacent light emitting cells (e.g., 2110e-1 and 2110e-2).

The passivation layer 2120e is formed between the first electrodes 2130e1 and 2130e2 and the side surfaces of the light emitting structures 2110-1 and 2110-2 and between the side surfaces of the light emitting structures facing each other And a second passivation layer 2124e disposed on the upper surfaces of the first conductivity type semiconductor layers 2112-1 and 2112-2 of the light emitting cells 2100-1 and 2100-2, ).

Each of the first electrodes 2130e1 to 2130e4 may include upper electrodes 2134e1 and 2134e2, through electrodes 2132e1 and 2132e2 and contact electrodes 2136e1 and 2136e2, 2136e3 and 2136e4.

The insulating layer 2150e includes a first insulating layer 2152e disposed on the lower surfaces of the second conductivity type semiconductor layers 2116a-1 to 2116a-3 of the light emitting cells 2100b-1 to 2100b-3, And a second insulating layer 2154e disposed on the outer surfaces of the respective light emitting structures 2100e-1 to 2100e-3.

Referring to FIG. 32B, the first electrode pad 2135e is disposed under the first insulating layer 2152e and penetrates through the first electrodes 2130e1 to 2130e4 penetrating the first insulating layer 2152e 2132e1, 2132e2, respectively.

For example, the first electrode pad 2135e may be disposed under the first insulating layer 2152e located at the edge of the light emitting structure of the light emitting structure adjacent to the outer surface of the light emitting structure, and the penetrating electrodes 2132e1, 2132e2, In the vertical direction.

Each of the second electrodes 2140e1 to 2140e3 is disposed on the lower surface of the corresponding one of the light emitting cells.

And the second electrode pads 2145e1 to 2145e3 may be disposed under a corresponding one of the second electrodes.

Referring to FIG. 32B, one of the second electrode pads 2145e1 to 2145e3 (for example, 2145e2) is arranged to vertically overlap with any one of the light emitting cells 2100e-1 to 2100e-3 . The second electrode pads 2145e1 and 2145e3 may have a ring shape having different diameters and may be formed concentrically with respect to any one of the light emitting cells 2100e-1 to 2100e-3 located at the center of the light emitting cells 2100e-1 to 2100e-3. .

A second insulating layer 2152e may be disposed between the first electrode pad 2135e and the second electrode pads 2145e3 and between the second electrode pads 2145e1 through 2145e3.

The second electrode pads 2145e1 and 2145e3 are arranged concentrically and the first electrode pads 2135e surround the second electrode pads 2145e3 located at the outermost positions, Because of its placement on the outside,

When the light emitting device 2000-6 is mounted on a package body, a submount, or a substrate, the arrangement is easy and free from the viewpoint of directionality.

Even if the first and second electrode pads 2135e and 2145e1 to 2145e3 of the light emitting device are partially misaligned with the conductive layers such as the package body, submount, or substrate, The occurrence of short can be suppressed.

The light emitting devices 2100 and 2100-1 to 2100-6 shown in FIGS. 24, 26A, 27A and 27B, 29A, 30A and 30B, 31A and 31B, The size (e.g., maximum diameter of the chip) may be less than 100 micrometers. In the light emitting devices 2100 and 2100-1 to 2100-6 having a diameter of less than 100 micrometers, it is not easy to form a bonding pad for wire bonding.

The light emitting devices 2100 and 2100-1 to 2100-6 according to the embodiment include a first electrode passing through both the light emitting structure and the insulating layer and the first electrode pads for flip chip bonding or die bonding (For example, a maximum diameter of a chip) of less than 100 micrometers is disposed on the same side of the light emitting structure, the first and second electrodes (e.g., the first electrode pad and the second electrode pad) Pads can be easily implemented.

34 shows a cross-sectional view of a lighting device 2200 according to an embodiment.

34, the illumination device 2200 includes a substrate 2510, a body 2520, at least one light emitting device (e.g., 2530-1 to 2530-5), and a light transmitting member 2540. [

The substrate 2510 may be a printed circuit board including the first to third wiring layers 2512, 2514-1, and 2514-2, and the insulating layer 2515. [ For example, the substrate 2510 may be a flexible circuit board.

The first to third wiring layers 2512, 2514-1 and 2514-2 may be spaced apart from each other on the substrate 2510 and the insulating layer 2515 may include first to third wiring layers 2512 and 2514 -1, and 2514-2 on the upper surface of the substrate 2510 to electrically insulate the first to third wiring layers 2512, 2514-1, and 2514-2 from each other. Or in other embodiments the insulating layer 2515 may be omitted.

At least one light emitting device (e.g., 2530-1 to 2530-5) is disposed on the substrate 2510 and electrically connected to the first to second wiring layers 2512, 2514-1, and 2514-2.

At least one light emitting device (e.g., 2530-1 to 2530-5) may be any one of the light emitting devices 2000, 2000-1 to 2000-6 according to the above-described embodiment.

The description of the body 520 and the light-transmissive member 540 in Fig. 10 can be applied to the body 2520 and the light-transmissive member 2540 in Fig.

For example, the illumination device 2200 may include a plurality of light emitting elements (e.g., 2530-1 to 2530-5), and each of the plurality of light emitting elements (e.g., 2530-1 to 2530-5) It is possible to generate lights 2601 and 2602 having different wavelengths.

For example, each of the plurality of light emitting elements (e.g., 2530-1 to 2530-5) of the embodiment of FIG. 34 may be the embodiment of FIG. 24, FIG. 26A, or FIG. 27A and two light emitting cells 2100-1 to 2100 2, and 2100a-1 to 2100a-2 may generate two lights 2601 and 2602 selected from red light, green light, and blue light, and the embodiment may include a light source of a display device that displays an image, .

Since the light emitting devices according to the embodiments can reduce the thickness, the display device including the same can reduce the size, for example, the thickness.

Fig. 35 shows a cross-sectional view of a lighting apparatus 2200-1 according to another embodiment. The same reference numerals as those in FIG. 34 denote the same components, and a description of the same components will be simplified or omitted.

Each of the light emitting elements 2531 to 2531-5 of the illumination device 2200-1 shown in Fig. 35 may be any of the embodiments of Figs. 29A, 31A, or 32A.

The first electrode pads of each of the light emitting elements 2531 to 2531-5 may be bonded to any one of the wiring layers 2512-1 and 2512-2 which are spaced apart from each other and the light emitting elements 2531 to 2531- 5) Each of the second electrode pads may be bonded to any one of the wiring layers 2514a-1 to 2514a-3 spaced from each other.

The three light emitting cells 2100b-1 to 2100b-3, 2100d-1 to 2100d-3 and 2100e-1 to 2100e-3 of the light emitting elements 2531 to 2531-5 are respectively connected to the red light 2701, (Green) 2702 and blue light (Blue) 2703, and the embodiment may be implemented with a light source of a display device that displays an image, for example, a pixel.

FIG. 36 shows a plan view of a display device 3000 according to the embodiment, and FIG. 37 shows a cross-sectional view according to an embodiment of the display device shown in FIG.

The display device 3000 shown in FIG. 36 includes a mobile phone, a smart phone, a notebook computer, a digital broadcasting terminal, a PDA (Personal Digital Assistants), a PMP (Portable Miltimedia Player), a navigation device, a slate PC, A tablet PC, a digital TV, and a desktop computer, and may be implemented as a flat panel display or a flexible display. The display device 3000 may also be implemented as a pixel array or a display panel.

The time information represented by the display device 3000 can be realized by controlling the emission of a unit pixel (sub-pixel) arranged in a matrix form. In this case, the unit pixel may be a minimum unit for implementing one color formed by a combination of R (Red), G (Green), and B (Blue). The light emitting device according to the above-described embodiment may serve as a unit pixel of the display device 3000.

36 and 37, the display device 3000 includes a substrate 3100, a first wiring electrode 3112, a second wiring electrode 3114, a body 3520 having a partition wall 3520a, and a plurality of (A natural number of P11 to Pnm, n, m> 1) in the form of a matrix including light emitting elements (for example, 3530-1 to 3530-5), and a light transmitting member 3540.

For example, the display device 3000 may be implemented as a pixel array including a substrate 3100 and unit pixels (P11 to Pnm, n, m> 1) in the form of a matrix.

The substrate 3100 may be a flexible substrate.

For example, the substrate 3100 can be a conductive material, such as Cu, Ni, etc., and can be attached in the form of a plate, or formed through growth such as plating.

In addition, for example, the substrate 3100 is an insulating material, e.g., SiO _2, TiO2, Al ₂ O _3, polymer (e.g., polyimide (Polyimide)), EMC, ceramic materials, PEN (Polyethylene Naphthalate), for insulation, or PET (Polyethylene terephthalate), etc., and they can be formed in a plate form or can be formed by a growth method. For example, when the material of the substrate 3100 is EMC or a ceramic material, the substrate 3100 can be formed by a coating method.

Also, for example, the substrate 3100 may be transmissive, but is not limited thereto, and may be opaque in other embodiments.

A plurality of light emitting elements (e.g., 3530-1 to 3530-5) may be disposed on the substrate 3100 in the form of an mxn matrix. 37 shows only five light emitting devices, but the number of light emitting devices of the display device 3000 may be a number included in the mxn matrix.

The barrier ribs 3520a are disposed between the plurality of light emitting devices 3530-1 to 3530-5 and include a black insulator to enhance the contrast according to the purpose of the display device 3000 Or a white insulator to enhance reflectivity.

The description of the partition 520a, the body 520 and the light transmitting member 540 in Fig. 10 can be applied to the partition wall 3520a, the body 3520, and the light transmitting member 3540. [

Each of the light emitting elements (e.g., 3530-1 to 3530-5) may be any of the embodiments shown in Figs. 13, 16, 17A, 18A, and 20A.

The first wiring electrode 3112 is disposed on the lower surface of the substrate 3100 and passes through the substrate 3100 and is connected to one end of the first electrode 1130 of each of the light emitting devices 3530-1 to 3530-5, For example, one end of the extension electrode 1132.

The second wiring electrode 3114 is disposed on the lower surface of the substrate 3100 so as to be spaced apart from the first wiring electrode 3114 and passes through the substrate 3100 to form light emitting elements 3530-1 to 3530-5 The second electrode pad 1145 of the second electrode pad 1145 is connected or bonded.

Each of the first and second wiring electrodes 3112 and 3114 may be exposed from the lower surface of the substrate 3100, but is not limited thereto. Although the first and second wiring electrodes 3112 and 3114 pass through the substrate 3100 in FIG. 37, the first and second wiring electrodes 3112 and 3114 are not limited thereto. In other embodiments, But may be located on the substrate 3100 without passing through the substrate 3100. [

Although not shown in FIGS. 36 and 37, in order to prevent an electrical short-circuit of the first and second wiring electrodes 3112 and 3114, the embodiment includes a substrate (not shown) between the first and the wiring electrodes 3112 and 3114 3100), it is possible to further include an insulating layer.

Each of the light emitting elements 3530-1 to 3530-5 includes a light emitting element that generates blue light, a light emitting element that generates red light, and a light emitting element that generates green light, and emits red light in the row direction and column direction, respectively A light emitting element for generating green light, and a light emitting element for generating blue light may be sequentially and repeatedly arranged. In this case, the light emitting elements, e.g., unit pixels, that emit red light, green light, and blue light may form one image pixel.

(Hereinafter referred to as "green luminescent region") of the light emitting element that emits green light, and a blue light region (hereinafter referred to as " green luminescent region " (Hereinafter referred to as "blue light emitting region") of the light emitting element that emits light can be different from each other. For example, the area of the green light emitting region and the area of the red light emitting region, which have relatively low light emitting efficiency, may be larger than the area of the blue light emitting region.

For example, the area of the green luminescent region may be 1 to 4 times the area of the blue luminescent region, and the area of the red luminescent region may be 1 to 3 times the area of the blue luminescent region.

For example, in another embodiment, the areas of the red light emitting region and the green light emitting region may be equal to each other.

For example, the ratio of the area of the blue light emitting region, the area of the red light emitting region, and the area of the green light emitting region may be 1: 2: 3 or 1: 3: 3, but is not limited thereto.

Fig. 38 shows a cross-sectional view along the AA 'direction of another embodiment (3000-1) of the display device shown in Fig.

Referring to FIG. 38, each of the plurality of light emitting devices (for example, 3530-1 'to 3530-5') included in the display device 3000-1 is shown in FIGS. 3, 6, 7A, And a light emitting element for generating red light, a light emitting element for generating green light, and a light emitting element for generating blue light may be sequentially and repeatedly arranged in the row direction and the column direction, respectively.

At this time, the first wiring electrode 3112a may be bonded to the first electrode pad 135 of the light emitting devices (for example, 3530-1 'to 3530-5') through the substrate 3100, The first electrode pad 3114a may be bonded to the second electrode pad 145 through the substrate 3100. [

39A shows the first electrodes 3130-1 to 3130-3 of the light emitting elements (e.g., 3530-1 to 3530-3) constituting one image pixel 22 shown in Figs. 36 and 37, and Fig. 39B shows the arrangement relationship of the second electrode pads 3145-1 to 3145-3, and FIG. 39B shows the arrangement relationship of the first electrodes 3130-1 to 3130-3 and the second electrode pads 3145- 1 to 3145-3, and second wiring electrodes 3114-1 to 3114-3, respectively.

39A and 39B, each of the first electrodes 3130-1 to 3130-3 of the light emitting elements (for example, 3530-1 to 3530-3) includes a common electrode (not shown) disposed on the substrate 3100 And may be disposed so as to be connected to the connection electrode 3130a in common.

The first electrode pads 3145-1 to 3145-3 of the light emitting elements (e.g., 3530-1 to 3530-3) may be disposed on the substrate 3100 so as to be spaced apart from each other.

The first wiring electrode 3112 is located corresponding to the common connection electrode 3130a and can be connected to the common connection electrode 3130a through the substrate 3100. [

Each of the second wiring electrodes 3114-1 through 3114-3 penetrates through the substrate 3100 and is electrically connected to the second electrode pads 3145-1 through 3145-3 of the light emitting devices 3530-1 through 3530-3, 3). ≪ / RTI >

40A shows another embodiment of the first electrodes and second electrode pads of the light emitting elements constituting one image pixel 22 shown in Figs. 36 and 37, Fig. 40B shows another embodiment of the first electrode pads of the first And the first wiring electrode and the second wiring electrode connected to the electrodes and the second electrode pads.

40A and 40B, the first electrodes 3130a-1 to 3130a-3 of the light emitting devices 3530a-1 to 3530a-1 are disposed on the substrate 3100 so as to be spaced apart from each other, The second electrode pads 3145a-1 to 3145a-3 of the first and second electrodes 3530a-1 to 3530a-1 are disposed on the substrate 3100 so as to be spaced apart from each other.

The first wiring electrodes 3112a pass through the substrate 3100 and are bonded to the first electrodes 3130a-1 to 3130a-3, respectively. For example, the first wiring electrode 3112a may have first contact portions 41, 42, and 43 that are penetrated through the substrate 3100 and bonded to the first electrodes 3130a-1 to 3130a-3, respectively.

The second wiring electrodes 3114a-1 to 3114a-3 are spaced apart from each other and each of the second wiring electrodes passes through the substrate 3100 and is electrically connected to the second electrode pads of the light emitting elements 3530a-1 to 3530a- 3145a-1 to 3145a-3.

For example, each of the second wiring electrodes 3114a-1 to 3114a-3 may be connected to a corresponding one of the second electrode pads 3145a-1 to 3145a-3 through the substrate 3100, You can have wealth.

For example, when the region where the image pixel 22 is located on the substrate 3100 is referred to as an image pixel region, and the image pixel region is a rectangle as shown in Figs. 40A and 40B, A first wiring pad portion 3112a-1 disposed adjacent to the first edge and first wiring extension portions 3112a-2 and 3112a-3 extending from the first wiring pad portion 3112a-1 .

Each of the second wiring electrodes 3114-1 to 3114-1 includes second wiring pad portions 61a, 61b, and 61c disposed adjacent to any one of the remaining corners of the pixel region except for the first corner, 62b, 62c extending from the first and second wiring pads 61a, 61b, 61c.

Each of the first wiring extensions 3112a-2 and 3112a-2 may include a first extending portion extending in a first direction parallel to the column direction or the row direction of the unit pixel array.

Each of the second wiring extensions 62a, 62b, 62c may include a second extending portion extending in the first direction or in a direction opposite to the first direction.

The first extending portions of the first wire extensions 3112a-2 and 3112a-2 and the second extending portions of the second wire extensions 62a, 62b and 62c are alternately arranged in the direction perpendicular to the first direction, And the first extending portions may be disposed between the second extending portions.

41A shows another embodiment of the first electrodes and the second electrode pads of the light emitting elements constituting one image pixel 22 shown in Figs. 36 and 37, and Fig. 41B is a cross- The first wiring electrode and the second wiring electrode connected to the first electrodes and the second electrode pads.

41A and 41B, the first electrodes 3130b-1 to 3130b-3 of the light emitting devices 3530b-1 to 3530b-1 are disposed on the substrate 3100 so as to be spaced apart from each other, The two-electrode pads 3145b-1 to 3145b-3 are disposed on the substrate 3100 so as to be spaced apart from each other.

One of the second wiring electrodes 3114b-1 to 3114b-3 is located at the center of the image pixel region and the remaining second wiring electrodes 3114b-2 and 3114b-3 have the same diameter And may be arranged concentrically with respect to any one second wiring electrode 3114b-1 located at the center.

The first wiring electrode 3112b may be arranged so as to surround the second wiring electrode 3114b-3 located at the outermost one of the second wiring electrodes 3114b-1 to 3114b-3.

The first wiring electrode 3112b may have second contacts passing through the substrate 3100 and being bonded to a corresponding one of the first electrodes of the light emitting devices 3530b-1 to 3530b-1.

Each of the second wiring electrodes 3114b-1 to 3114b-3 may be connected to a corresponding one of the second electrode pads of the light emitting devices 3530b-1 to 3530b-1 through the substrate 3100 2 < / RTI > contacts.

In other embodiments, the light emitting devices (e.g., 3530-1 to 3530-3, 3530a-1 to 3530a-3, 3530b-1 to 3530b-3) of FIGS. 39A and 39B, 40A and 40B, 41A, 3, 6, 7A, and 8A. In this case, the first wiring electrode 3112 and the second wiring electrodes 3114-1 through 3114- 3 may be modified according to the number and position of the first electrode pad 135 and the second electrode pad 145 of the light emitting device.

42A to 42G show a manufacturing method of a display device according to the embodiment.

Referring to FIG. 42A, a light emitting structure including a first conductivity type semiconductor layer 1112, an active layer 1114, and a second conductivity type semiconductor layer 1116 is formed on a growth substrate 1410.

A buffer layer or an undoped semiconductor layer may be interposed between the growth substrate 3410 and the light emitting structure 1110 in order to alleviate the stress caused by the difference in lattice constant between the light emitting structure 1110 and the growth substrate 1410. [ layer, for example, an undoped GaN layer may be further formed.

An isolation process is performed on the light emitting structure to form mutually separated light emitting structures 1110 for unit pixels.

A second electrode 1140 is formed on the second conductive type semiconductor layer 1116 of each of the light emitting structures 1110 separated from each other and the side surface of each of the light emitting structures 1110 and the side surface of the second conductive type semiconductor layer 1110 The insulating layer 1150 is formed by depositing an insulating material on the insulating layer 1116. [

A second electrode pad 1145 is formed on the second electrode 1140 of each of the light emitting structures 1110 separated from each other.

A substrate 3100 is formed to be in contact with the upper surface of the second electrode pad 1145 of each of the light emitting structures 1110 separated from each other. For example, a substrate may be formed on the upper surface of the second electrode pad 1145 through deposition, or a substrate may be formed on the upper surface of the second electrode pad.

Referring to FIG. 42B, a first via hole 3301 that exposes the upper surface of the second electrode pad 1145 through the substrate 3100, and a second via hole 3301 that is spaced apart from the first via hole 3301, And the second via hole 3302 penetrating through the substrate 3100 is formed.

Next, referring to FIG. 42C, a conductive material is deposited on the substrate 3100 to fill the first and second via-holes 3301, and then the deposited conductive material is patterned to contact the second electrode pad 1145 The second wiring electrode 3114 which is spaced apart from the first wiring electrode 3112 and the first wiring electrode 3112 and does not overlap with the light emitting structure 1110 in the vertical direction is formed.

Next, referring to FIG. 42D, a supporting board 3101 is formed on the substrate 3100 having the first and second wiring electrodes 3112 and 3114 formed thereon. The supporting board 3101 may be bonded to the substrate 3100 by an adhesive tape or a resin, but is not limited thereto.

Next, referring to FIG. 42E, the growth substrate 3410 is separated or removed from the light emitting structure 1110 by a laser lift off (LLO) process. In FIG. 42E and later, the light emitting structure 1110 shown in FIG. 42D is rotated by 180 degrees.

Next, referring to FIG. 42F, the buffer layer or the undoped semiconductor layer formed between the light emitting structure 1110 and the growth substrate 3410 is removed by etching or the like. The light extracting structure 1112a is formed on the surface of the first conductive type semiconductor layer 1112 exposed by the removal of the growth substrate 3410 through etching or the like.

The passivation layer 1120a is formed by depositing a light-transmitting insulating material on the surface of the first conductivity type semiconductor layer 1112 exposed by the removal of the growth substrate 3410. A part of the passivation layer 1120a is etched to form a through hole 3303 exposing a part of the surface of the first conductivity type semiconductor layer 1112. [

Next, referring to FIG. 42G, a conductive material is deposited on the passivation layer 1120a so as to fill the through-hole 3303. FIG. At this time, a conductive material formed on the passivation layer 1120a is deposited on the substrate 3100 on one side of the light emitting structure 1110 so as to extend to the upper surface. At this time, the deposited conductive material may contact the second wiring electrode 3114.

The first electrode 1130 is formed by patterning a conductive material formed on the passivation layer 1120a. At this time, the conductive material filled in the through hole 3303 may contact the surface of the first conductive type semiconductor layer 1112.

Although not shown in the drawing, the supporting board 3101 is removed by chemical etching or the like, the body 3520 having the partition 3520 on the substrate 3100, and the light-transmitting member 3540 are formed, The display device 3000 according to the present invention can be obtained.

42A to 42G, it is possible to reduce the number of processes compared with the method of mounting the light emitting elements in a packaged form on a substrate, , A thin thickness can be realized.

FIG. 43 shows a plan view of a display device 3000-2 according to another embodiment, and FIG. 44 shows a cross-sectional view according to an embodiment of the BB 'direction of the display device shown in FIG.

43 and 44, the light emitting elements (for example, 3530-1 to 3530-5) of the unit pixel arrays P11 to Pnm are arranged such that a first pair and a second pair are arranged alternately in the column direction . The first pair may consist of a light emitting element which generates blue light and green light which are arranged in order, and the second pair may be composed of a light emitting element which generates red light arranged in turn and a light emitting element which generates green light.

The light emitting elements 3530-1 to 3530-5 of the unit pixel arrays P11 to Pnm (for example, 3530-1 to 3530-5) have a first arrangement in which light emitting elements for generating blue light and light emitting elements for generating red light are alternately arranged in the row direction And a second array in which only light emitting elements that emit green light are arranged, the first array may be either an even row or an odd row, and the second array may be any one of an even row row and an odd row row . At this time, the light emitting elements included in the first pair and the second pair can form one image pixel.

For example, in the unit pixel arrays shown in Figs. 43 and 44, the number of light emitting elements that emit green light is larger than the number of light emitting elements that generate blue light and the number of light emitting elements that generate red light, The area of the light emitting area of the light emitting device that generates green light for visual sensitivity may be smaller than the light emitting area of the light emitting device that generates blue light and the area of the light emitting area of the light emitting device that generates red light.

Further, for example, since the number of light emitting elements that generate blue light is the same as the number of light emitting elements that generate red light, but the luminous efficiency of the light emitting element that generates red light is lower than that of the light emitting element that generates blue light, The area of the light emitting region of the device may be larger than the area of the light emitting region of the light emitting device that generates blue light, but is not limited thereto.

Fig. 45 shows a cross-sectional view along the BB 'direction of another embodiment (3000-3) of the display device shown in Fig.

45, each of a plurality of light emitting elements (for example, 3530-1 'to 3530-5') included in the display device 3000-3 includes a plurality of light emitting elements 3530-1 'to 3530-5' shown in FIGS. 3, 6, 7A, And the arrangement of R, G, and B can be made in the same manner as described in Figs. 43 and 44. Fig.

FIG. 46 shows a plan view of a display device 3000-4 according to another embodiment, and FIG. 47 shows a cross-sectional view according to an embodiment of the CC 'direction of the display device shown in FIG.

46 and 47, each of the light emitting elements (for example, 3530-1 "to 3530-5") of the pixel arrays P11 to Pnm includes the light emitting elements 3530-1 to 3530-5 shown in Figs. 22, 26A to 26C, May be any of the embodiments (2000, 2000-1, 2000-1 ', 2000-1 ", 2000-2).

The first wiring electrode 3112b is disposed on the lower surface of the substrate 3100 and passes through the substrate 3100 to form a plurality of light emitting cells 2100- 1, and 2100-2. The first electrode pad 2135 is a common electrode.

The second wiring electrodes 3114b1 and 2114b2 are disposed on the lower surface of the substrate 3100 so as to be spaced apart from the first wiring electrode 3112b and pass through the substrate 3100 to emit light from the light emitting elements 3530-1 to 3530 And the second electrode pads 1145-1 and 1145-2 disposed in the plurality of light emitting cells 2100-1 and 2100-2 of the first and second light emitting cells 1100-1 and 1150-2.

The plurality of light emitting cells 2100-1 and 2100-2 of each of the light emitting elements (e.g., 3530-1 "to 3530-5") can emit blue light and green light, or generate red light and green light.

For example, the light emitting devices 3530-1 "to 3530-5" include a first light emitting device including a first light emitting cell for generating blue light and a second light emitting cell for generating green light (hereinafter, (Hereinafter referred to as "RG light emitting device") including a third light emitting cell for generating red light and a fourth light emitting cell for generating green light, The BG light emitting element and the RG light emitting element can be alternately arranged in the row direction. At this time, the BG light emitting device and the RG light emitting device can form one image pixel. In addition, for example, the first through fourth light emitting cells may be sequentially and repeatedly arranged in the column direction of the matrix, and the first light emitting cell and the third light emitting cell may be alternately arranged in the row direction.

In the embodiment 3000-3 shown in FIGS. 43 and 44, the four light emitting devices form one image pixel, whereas the embodiment 3000-4 shown in FIGS. 46 and 47 includes two light emitting devices Can form one image pixel. Compared to the embodiment (3000-3) shown in Figs. 43 and 44, the embodiment (3000-4) can realize a higher resolution image.

In Fig. 47, the plurality of light emitting cells 2100-1 and 2100-2 generate light of different wavelengths, but the present invention is not limited thereto. In another embodiment, the light emitting devices (e.g., 3530-1 " Quot;) can emit light having the same wavelength as each other. For example, the plurality of light emitting cells 2100-1 and 2100-2 of each of the light emitting elements (for example, 3530-1 to 3530-5) may generate blue light, generate green light, or generate red light In this case, RG, B, and B arrangements may be made as described in FIG. 38, or RG and BG arrangements may be made as described in FIG.

In FIG. 47, each of the light emitting devices includes two light emitting cells, and each of the light emitting cells generates blue light and green light, or generates red light and green light, but is not limited thereto.

In other embodiments, the light emitting devices (e.g., 3530-1 "to 3530-5") may include three light emitting cells, one of the three light emitting cells generates blue light, And the other light emitting cell may emit red light. In this case, the light emitting cells included in the light emitting devices may be arranged in R, G, and B as described in FIG.

For example, a light emitting cell for generating red light, a light emitting cell for generating green light, and a light emitting cell for generating blue light may be sequentially and repeatedly arranged in the row direction and the column direction, respectively.

FIG. 48 shows a perspective view of the portable terminal 200A according to the embodiment, and FIG. 49 shows a configuration diagram of the portable terminal shown in FIG.

48 and 49, the portable terminal 200A includes a body 850, a wireless communication unit 710, an A / V input unit 720, a sensing unit 740, an input / An output unit 750, a memory unit 760, an interface unit 770, a control unit 780, and a power supply unit 790.

The body 850 shown in FIG. 48 is of a bar shape, but is not limited thereto. The body 850 may be a slide type, a folder type, a swing type, or a swing type in which two or more sub- , A swirl type, and the like.

The body 850 may include a case (casing, housing, cover, etc.) which forms an appearance. For example, the body 850 can be divided into a front case 851 and a rear case 852. Various electronic components of the terminal may be installed in the space formed between the front case 851 and the rear case 852. [

The wireless communication unit 710 may include one or more modules that enable wireless communication between the terminal 200A and the wireless communication system or between the terminal 200A and the network in which the terminal 200A is located. For example, the wireless communication unit 710 may include a broadcast receiving module 711, a mobile communication module 712, a wireless Internet module 713, a short distance communication module 714, and a location information module 715 have.

The A / V (Audio / Video) input unit 720 is for inputting an audio signal or a video signal and may include a camera 721 and a microphone 722.

The sensing unit 740 senses the current state of the terminal 200A such as the open / close state of the terminal 200A, the position of the terminal 200A, the presence of the user, the orientation of the terminal 200A, And generate a sensing signal for controlling the operation of the terminal 200A. For example, when the terminal 200A is in the form of a slide phone, it is possible to sense whether the slide phone is opened or closed. In addition, it is responsible for a sensing function related to the power supply of the power supply unit 790, whether the interface unit 770 is connected to an external device, and the like.

The input / output unit 750 is for generating an input or an output related to a visual, auditory or tactile sense. The input / output unit 750 can generate input data for controlling the operation of the terminal 200A and display information processed by the terminal 200A.

The input / output unit 750 may include a keypad unit 730, a display module 751, an audio output module 752, and a touch screen panel 753. [ The keypad unit 730 may generate input data by inputting a keypad.

The display module 751 may display any one of the display devices 3000, 3000-1 to 3000-4 according to the embodiment in which the color changes according to an electrical signal controlled by the controller 780, 3000 - 1 to 3000 - 4).

For example, the display module 751 may be a liquid crystal display, a thin film transistor-liquid crystal display, an organic light-emitting diode, a flexible display, And a display (3D display).

The audio output module 752 outputs audio data received from the wireless communication unit 710 in a call signal reception mode, a call mode, a recording mode, a voice recognition mode, or a broadcast reception mode, Audio data can be output.

The touch screen panel 753 may convert a change in capacitance caused by a user's touch to a specific area of the touch screen into an electrical input signal.

The memory unit 760 may store programs for processing and controlling the control unit 780 and may store input / output data (e.g., telephone directory, message, audio, still image, You can save it temporarily. For example, the memory unit 760 may store an image, e.g., a photograph or a moving image, photographed by the camera 721. [

The interface unit 770 serves as a path for connection to an external device connected to the terminal 200A. The interface unit 770 receives data from an external device or supplies power to each component in the terminal 200A or allows data in the terminal 200A to be transmitted to an external device. For example, the interface unit 770 may include a wired / wireless headset port, an external charger port, a wired / wireless data port, a memory card port, a port for connecting a device equipped with the identification module, Output port, a video input / output (I / O) port, and an earphone port.

The controller 780 can control the overall operation of the terminal 200A. For example, the control unit 780 may perform related control and processing for voice call, data communication, video call, and the like.

The control unit 780 may include the panel control unit 144 of the touch screen panel driving unit shown in FIG. 1 or may perform the function of the panel control unit 144.

The control unit 780 may include a multimedia module 781 for multimedia playback. The multimedia module 781 may be implemented in the control unit 180 or may be implemented separately from the control unit 780.

The control unit 780 can perform a pattern recognition process for recognizing handwriting input or drawing input performed on the touch screen as characters and images, respectively.

For example, the control unit 780 can control the driving of the light emitting elements of the pixel array of the display devices 3000, 3000-1 to 3000-4 according to the embodiment, for example, the turn-on or turn-off operation of the light emitting elements .

The power supply unit 790 can supply external power or internal power under the control of the controller 780 and supply power required for operation of each component.

The features, structures, effects and the like described in the embodiments are included in at least one embodiment of the present invention and are not necessarily limited to one embodiment. Further, the features, structures, effects, and the like illustrated in the embodiments can be combined and modified by other persons having ordinary skill in the art to which the embodiments belong. Therefore, it should be understood that the present invention is not limited to these combinations and modifications.

110: light emitting structure 120: passivation layer
130: first electrode 135: first electrode pad
140: second electrode 145: second electrode pad
150: Insulation layer.

Claims (19)

Board; And
And a plurality of light emitting elements arranged on the substrate in a matrix form to be spaced apart from each other,
Each of the light-
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
An insulating layer disposed under the second conductive type semiconductor layer;
A first electrode pad and a second electrode pad disposed on the substrate and spaced apart from each other below the insulating layer;
A first electrode penetrating the light emitting structure and the insulating layer and connected to the first electrode pad; And
A second electrode disposed between the second conductive semiconductor layer and the second electrode pad;
And a passivation layer disposed between the first electrode and the light emitting structure,
Wherein the first electrode is in contact with the first conductivity type semiconductor layer through the passivation layer. Board; And
And a plurality of light emitting elements arranged on the substrate in a matrix form to be spaced apart from each other,
Each of the light-
A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer;
A passivation layer disposed on the first conductive semiconductor layer;
A first conductive semiconductor layer disposed on the passivation layer and having one end contacting the first conductive semiconductor layer through the passivation layer and the other end extending toward a side of the light emitting structure, electrode;
A second electrode disposed below the second conductive semiconductor layer;
An electrode pad disposed under the second electrode; And
And an insulating layer disposed on a side surface of the light emitting structure,
Wherein the other end of the first electrode is spaced apart from an insulating layer disposed on a side surface of the light emitting structure. Board; And
And a plurality of light emitting elements arranged on the substrate in a matrix form to be spaced apart from each other,
Each of the light-
A plurality of light emitting cells including a light emitting structure including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer;
An insulating layer disposed under the second conductive type semiconductor layer of the light emitting cells;
At least one first electrode disposed between two adjacent light emitting cells and contacting the first conductive semiconductor layers of the adjacent two light emitting cells;
A first electrode pad and a second electrode pad spaced apart from each other below the insulating layer; And
And a passivation layer disposed between the at least one first electrode and a side surface of the light emitting structure of the plurality of light emitting cells,
Wherein one end of the electrode is in contact with the first conductive type semiconductor layer through the passivation layer and the other end of the first electrode is connected to the at least one first electrode pad through the insulating layer, / RTI > 4. The method according to any one of claims 1 to 3,
Wherein the light emitting elements include a light emitting element that generates blue light, a light emitting element that generates red light, and a light emitting element that generates green light,
Wherein the light emitting element for generating the red light, the light emitting element for generating the green light, and the light emitting element for generating the blue light are arranged repeatedly in the row direction and the column direction of the matrix, respectively. 4. The method according to any one of claims 1 to 3,
The light emitting devices include a light emitting device that generates blue light, a light emitting device that generates red light, or a light emitting device that generates green light,
Wherein a first pair and a second pair are alternately arranged in the column direction of the matrix, the first pair comprises a light emitting element for generating blue light arranged in turn and a light emitting element for generating green light, Wherein the pair comprises a light emitting element for generating red light arranged in order and a light emitting element for generating green light. 6. The method of claim 5,
Wherein the light emitting elements include a first array in which light emitting elements for generating blue light and light emitting elements for generating red light are alternately arranged in the row direction and a second array in which only light emitting elements for generating green light are arranged, 1 array is any one of an even-numbered row and an odd-numbered row, and the second array is any one of an even-numbered row and an odd-numbered row. The method of claim 3,
Each of the light emitting devices includes a first light emitting cell for generating blue light, a second light emitting cell for generating green light, and a third light emitting cell for generating red light,
Wherein the first to third light emitting cells are repeatedly arranged in the first light emitting cell, the second light emitting cell, and the third light emitting order in the row direction and the column direction of the matrix, respectively. The light emitting device according to claim 3,
A first light emitting element including a first light emitting cell for generating blue light and a second light emitting cell for generating green light;
A third light emitting cell for generating red light, and a fourth light emitting cell for generating green light,
Wherein the first and second light emitting elements are alternately arranged in the column direction and the row direction of the matrix. The method of claim 3,
The light emitting devices include a first light emitting device including a first light emitting cell for generating blue light and a second light emitting cell for generating green light,
A third light emitting cell for generating red light, and a fourth light emitting cell for generating green light,
Wherein the first to fourth light emitting cells are sequentially and repeatedly arranged in a column direction of the matrix, and the first light emitting cell and the third light emitting cell are alternately arranged in a row direction of the matrix. 5. The method of claim 4,
Wherein the area of the light emitting region of the light emitting element that generates the green light and the area of the light emitting region of the light emitting element that generates the red light are larger than the area of the light emitting region of the light emitting element that generates the blue light. 6. The method of claim 5,
Wherein the area of the light emitting region of the light emitting element that generates the green light is smaller than the area of the light emitting region of the light emitting element that generates the blue light and the area of the light emitting region of the light emitting element that generates the red light. The method according to claim 1 or 3,
A first wiring electrode connected to the first electrode pad through the substrate; And
And a second wiring electrode connected to the second electrode pad through the substrate. 3. The method of claim 2,
The light emitting devices include a first light emitting device for generating blue light, a second light emitting device for generating red light, and a third light emitting device for generating green light,
Wherein each of the first electrodes of the first through third light emitting elements is commonly connected to a common connection electrode disposed on the substrate,
And the second electrode pads of the first to third light emitting elements are arranged on the substrate so as to be spaced apart from each other. 14. The method of claim 13,
A first wiring electrode connected to the common connection electrode through the substrate; And
And second wiring electrodes passing through the substrate and connected to a corresponding one of the second electrode pads. 3. The method of claim 2,
The light emitting devices include a first light emitting device for generating blue light, a second light emitting device for generating red light, and a third light emitting device for generating green light,
Wherein the first electrodes of the first through third light emitting elements are disposed on the substrate so as to be spaced apart from each other,
And the second electrode pads of the first to third light emitting elements are arranged on the substrate so as to be spaced apart from each other. 16. The method of claim 15,
A first wiring electrode connected to the first electrodes through the substrate; And
And second wiring electrodes penetrating through the substrate and connected to a corresponding one of the second electrode pads. 17. The method of claim 16,
The first wiring electrode includes first extending portions extending in a first direction parallel to a row direction or a column direction of the matrix,
Each of the second wiring electrodes includes second extending portions extending in the first direction or in a direction opposite to the first direction,
Wherein the first extending portions and the second extending portions are alternately arranged in a direction perpendicular to the first direction, and the first extending portions are disposed between the second extending portions. 17. The method of claim 16,
Wherein one of the second wiring electrodes is located at the center,
Wherein the second wiring electrodes have a ring shape having a different diameter and are disposed concentrically with respect to any one of the second wiring electrodes located at the center. A pixel array according to any one of claims 1 to 3; And
And a control unit for controlling driving of the light emitting elements of the pixel array.

Images