CN1669907A - Electroplating method for micro-electromechanical system - Google Patents
Electroplating method for micro-electromechanical system Download PDFInfo
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- CN1669907A CN1669907A CN 200510007675 CN200510007675A CN1669907A CN 1669907 A CN1669907 A CN 1669907A CN 200510007675 CN200510007675 CN 200510007675 CN 200510007675 A CN200510007675 A CN 200510007675A CN 1669907 A CN1669907 A CN 1669907A
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- conductive metal
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Abstract
This invention relates to micro computer process plating method, which comprises the following steps: setting the needed device on the back of the base plate of the plating process; avoiding the anti-etching of the plating metal processed by base plate front side when in removing the conductive metal layer and especially in the recycling plating process with no needs to repeat processing conductive metal layer; using the conductive metal layer on the back of the base plate as the conductive metal layer in plating process.
Description
Technical field
The present invention relates to a kind of electro-plating method that is applied to micro electronmechanical processing procedure, particularly in micro electronmechanical processing procedure, can reduce the electro-plating method of making repeatedly and removing conductive metal layer.
Background technology
Generally be applied to the electro-plating method of micro electronmechanical processing procedure, can be divided into generally and have electricity to electroplate and do not have electrochemistry and electroplate two kinds, both main difference have been need switch on when electricity is electroplated and conductive metal layer need be set, and do not have electrochemistry and electroplate and then do not need.
Please refer to Fig. 1, adopting in micro electronmechanical processing procedure has electricity to electroplate when calling electroplating process in the following text, before electroplating at every turn, all must on the surface of substrate 10, be coated with a conductive metal layer 11, then on conductive metal layer 11, utilize photoresistance 14 preparations one electroplated regional opening 12, see through conductive metal layer 11 energisings then and just can in electroplated regional opening 12, electroplate metal 13, remove photoresistance 14 and metal conducting layer 11 unwanted parts at last again, just reach and on substrate 10, make circuit or micro electronmechanical purpose.
But in the micro electronmechanical processing procedure of part, adopt above-mentioned electroplating process commonly used but to still have following shortcoming;
One: in the process that removes metal conducting layer 11, institute's electroplated metal 13 takes place easily by anti-etching phenomenon;
Its two: in micro electronmechanical processing procedure if need incremental repeatedly electroplate respectively the time, because all must make a metal conducting layer 11 before each the plating, must remove this metal conducting layer 11 after electroplating again, its process had not only expended time in but also cost of idleness, even also the metallic circuit situation of short circuit can take place when metal conducting layer 11 removes when incomplete.
Summary of the invention
In order to overcome the defective of prior art, main purpose of the present invention is promptly disclosing a kind of electro-plating method that is applied to micro electronmechanical processing procedure, to carry out the essential conductive metal layer of electroplating process and be arranged on the substrate back that is used to make micro electronmechanical processing procedure, when removing the conductive metal layer of substrate back, can avoid causing anti-etching to the made plated metal of substrate front side, especially in micro electronmechanical processing procedure, need in the incremental process of repeatedly electroplating respectively, have the advantage that conductive metal layer was made and removed in release repeatedly, can improve the shortcoming that conductive metal layer must be made and remove to electroplating process commonly used repeatedly; This electro-plating method may further comprise the steps:
A, preparation and use have the two-sided substrate that electrically conducts of interconnect circuit;
B, the back side of the two-sided substrate that electrically conducts is made a conductive metal layer;
C, serve as each conductive metal layer when carrying out electroplating process in the front of the two-sided substrate that electrically conducts with the conductive metal layer of the two-sided substrate back that electrically conducts; Therefore, when electroplating in the front of the two-sided substrate that electrically conducts, no longer need repeat to make conductive metal layer in the front of the two-sided substrate that electrically conducts at every turn;
D, treat that all electroplating processes of the two-sided substrate front side that electrically conducts are finished after, remove the conductive metal layer of the two-sided substrate back that electrically conducts.
Description of drawings
Fig. 1 has electric electric plating method step schematic diagram in the micro electronmechanical processing procedure;
The electro-plating method invention schematic diagram that can be applicable to make micro electronmechanical processing procedure that Fig. 2 is shown in the present;
Fig. 3 covers the schematic diagram of an insulating protective layer with the protection conductive metal layer in addition for the present invention;
Fig. 4 is applied to electroplate the schematic diagram of circuit lead on the surface of multilayer ceramic substrate for the present invention;
Fig. 5 is applied to make circuit lead and step schematic diagram of metal column for the present invention on the surface of multilayer ceramic substrate;
Fig. 6 makes circuit lead and another step schematic diagram of metal column for being applied to for the present invention on the surface of multilayer ceramic substrate;
Fig. 7 is for being applied on the surface of multilayer ceramic substrate a making circuit lead and metal column step schematic diagram again for the present invention;
Fig. 8 is for being applied on the surface of multilayer ceramic substrate a making circuit lead and metal column step schematic diagram again for the present invention.
The accompanying drawing sign
10, substrate 11, conductive metal layer 12, electroplated regional opening
13, metal 14, photoresistance 20, the two-sided substrate that electrically conducts
21, the two-sided substrate front side 22 that electrically conducts, the two-sided substrate back that electrically conducts
23, interconnect circuit 25, circuit 27, insulating protective layer
28, conduction breach 30, multilayer ceramic substrate 31, multilayer ceramic substrate front
32, the multilayer ceramic substrate back side 41, perforate 42 circuit leads
43, photoresistance 60, protective layer 70, sacrifice layer
80, micro electronmechanical 90, metal column
The specific embodiment
As shown in Figure 2, the present invention is a kind of electro-plating method invention that can be applicable to make micro electronmechanical processing procedure, and its method may further comprise the steps:
A, preparation and use have the two-sided substrate 20 that electrically conducts of interconnect circuit 23; Wherein, the substrates such as single-layer ceramic substrate, multilayer ceramic substrate or printed circuit board (PCB) of the two-sided substrate 20 optional apparatus interconnect circuit 23 that electrically conduct;
B, the two-sided substrate back 22 of electrically conducting that step a is prepared are made a conductive metal layer 11;
C, serve as each conductive metal layer when the two-sided substrate front side 21 that electrically conducts is carried out electroplating process with the conductive metal layer 11 of the two-sided substrate back 22 that electrically conducts;
For example, in two-sided electrically conduct substrate front side 21 incremental making circuit 25 and micro electronmechanical 80, utilize the conductive metal layer 11 of the two-sided substrate back 22 that electrically conducts just can electroplate in the two-sided substrate front side 21 that electrically conducts, therefore, need not repeat to make conductive metal layer in the two-sided substrate front side 21 that electrically conducts.
D, treat that the two-sided substrate front side 21 all electroplating processes that electrically conduct complete after, remove the conductive metal layer 11 of the two-sided substrate back 22 that electrically conducts.
Electro-plating method invention shown in the present is that conductive metal layer 11 is arranged on the two-sided substrate back 22 that electrically conducts, and serve as each conductive metal layer when the two-sided substrate front side 21 that electrically conducts is carried out electroplating process, if the two-sided substrate front side 21 that electrically conducts has repeatedly electroplating process, can reduce the time and the cost that repeat to make conductive metal layer, and in the conductive metal layer 11 that removes the two-sided substrate back 22 that electrically conducts, can avoid plated metals such as the made circuit 25 of the two-sided substrate front side 21 of electrically conducting and micro electronmechanical 80 are caused by anti-etching, therefore, also can promote the micro electronmechanical precision of making.
In addition, as shown in Figure 3, for the conductive metal layer 11 of avoiding the two-sided substrate back 22 that electrically conducts is damaged or is contacted with electroplate liquid in electroplating process in making micro electronmechanical processing procedure, after completing steps b, again the conductive metal layer 11 of the two-sided substrate back 22 that electrically conducts is covered insulating protective layers 27 in addition to protect this conductive metal layer 11, wherein, this insulating protective layer 27 is optional is material in order to photoresistance, dry film, polyvinylamine (polyimide), coated glass (SOG) or other macromolecule; Then, this insulating protective layer 27 is removed a block of cells and constitute the conduction breach 28 of this insulating protective layer 27.
Therefore; when the micro electronmechanical processing procedure of making is electroplated; the conduction breach 28 that power supply unit must see through this insulating protective layer 27 is connected with the conductive metal layer 11 of the two-sided substrate back 22 that electrically conducts; interconnect circuit 23 conductings that see through the two-sided substrate 20 that electrically conducts again are to the two-sided substrate front side 21 that electrically conducts; whereby, can carry out various electroplating processes to the two-sided substrate front side 21 that electrically conducts.
As shown in Figure 4, electro-plating method invention shown in the present can be applicable to electroplate circuit lead on the surface that multilayer ceramic substrate 30 is electroplated, and can reduce and make and remove conductive metal layer repeatedly, and its step comprises:
A, preparation and use have the multilayer ceramic substrate 30 of interconnect circuit 23;
B, the multilayer ceramic substrate back side 32 that step a is prepared make a conductive metal layer 11;
C, the made conductive metal layer of step b 11 is covered insulating protective layers 27 in addition;
D, the made insulating protective layer 27 of step c is removed a block of cells constitute conduction breach 28;
E, the multilayer ceramic substrate of completing steps d positive 31 is made a conductive metal layer 11, make the perforate 41 of electroplating the circuit lead zones with photoresistance 43 then;
F, the conduction breach 28 that sees through insulating protective layer 27 make power supply unit constitute via the conductive metal layer 11 in conductive metal layer 11 and interconnect circuit 23 and multilayer ceramic substrate front 31 and electrically connect, and circuit leads 42 are electroplated in the perforate 41 of photoresistance 43;
G, treat circuit lead 42 electroplate finish after, remove photoresistance 43 and conductive metal layer 11 does not need part, make multilayer ceramic substrate positive 31 therefore be provided with circuit lead 42;
H, the multilayer ceramic substrate 30 of completing steps g is carried out circuit lead 42 electroplate and go up protective layer 60 and handle;
I, the conductive metal layer 11 that removes the multilayer ceramic substrate back side 32 and insulating protective layer 27 are finished multilayer ceramic substrate 30 are electroplated upward circuit lead 42 making.
Wherein, when present embodiment in execution in step h plating protective layer 60 time; because power supply unit still constitutes electric connection via the conductive metal layer 11 at the multilayer ceramic substrate back side 32 and the circuit lead 42 in interconnect circuit 23 and multilayer ceramic substrate front 31; therefore; need not repeat to make conductive metal layer in the two-sided substrate front side 21 that electrically conducts; only need to insert multilayer ceramic substrate 30 in the electroplating bath and pass to electric current, circuit lead 42 surfaces that get final product multilayer ceramic substrate 30 plate required protective layer 60.
Embodiment 2
Electro-plating method invention shown in the present can be applicable to make circuit lead and metal column on the surface of multilayer ceramic substrate, as follow-up rigid probe or other micro electronmechanical application, and can reduce and make and remove conductive metal layer repeatedly, and its step comprises:
The step a that repeats embodiment 1 makes multilayer ceramic substrate 30 positive 31 electroplate and goes up circuit lead 42 and protective layer 60 to step h, then carries out following steps more in regular turn:
I, to multilayer ceramic substrate 30 coating one sacrifice layer 70 of completing steps h, and the perforate 41 that sacrifice layer 70 is produced an electroplated connected protective layer 60 surfaces to circuit lead 42, as shown in Figure 5;
J, the multilayer ceramic substrate 30 of completing steps i is carried out plated metal post 90, as shown in Figure 6;
K, treat that metal column 90 is electroplated and remove photoresistance 70 after finishing, make multilayer ceramic substrate positive 31 therefore be provided with the metal column 90 of circuit lead 42 and projection, as shown in Figure 7;
L, the conductive metal layer 11 that removes the multilayer ceramic substrate back side 32 and insulating protective layer 27 are finished multilayer ceramic substrate 30 are electroplated upward circuit lead 42 and metal column 90 making, as shown in Figure 8.
Wherein, present embodiment is not except repeating to make the conductive metal layer in the two-sided substrate front side 21 that electrically conducts at execution in step h; in the time of execution in step j plated metal post 90; because power supply unit still constitutes electric connection via the conductive metal layer 11 at the multilayer ceramic substrate back side 32 and the circuit lead 42 and the protective layer 60 in interconnect circuit 23 and multilayer ceramic substrate front 31; therefore; need not repeat to make conductive metal layer equally in the two-sided substrate front side 21 that electrically conducts; only need to insert multilayer ceramic substrate 30 in the electroplating bath and pass to electric current, can carry out plated metal post 90 steps multilayer ceramic substrate 30.Therefore, have and to reduce the advantage of making repeatedly and removing conductive metal layer.
The change of all parts or modification, and can by technical staff in the affiliated technical field be easy to know by inference and energy unlabored, do not break away from protection category of the present invention.
Claims (6)
1, a kind of electro-plating method that is applied to micro electronmechanical processing procedure can reduce and make and remove conductive metal layer repeatedly, it is characterized in that, this electro-plating method may further comprise the steps:
A, preparation and use have the two-sided substrate that electrically conducts of interconnect circuit;
B, the back side of the two-sided substrate that electrically conducts is made a conductive metal layer;
C, serve as each conductive metal layer when carrying out electroplating process in the front of the two-sided substrate that electrically conducts with the conductive metal layer of the two-sided substrate back that electrically conducts;
D, treat that all electroplating processes of the two-sided substrate front side that electrically conducts are finished after, remove the conductive metal layer of the two-sided substrate back that electrically conducts.
2, a kind of electro-plating method that is applied to micro electronmechanical processing procedure according to claim 1; it is characterized in that; after completing steps b; again the conductive metal layer of the two-sided substrate back that electrically conducts is covered an insulating protective layer in addition protecting this conductive metal layer, and this insulating protective layer is removed a block of cells constitute the conduction breach.
3, a kind of electro-plating method that is applied to micro electronmechanical processing procedure according to claim 2 is characterized in that, the material system of this insulating protective layer selects the wherein a kind of of photoresistance, dry film, polyvinylamine, coated glass or other macromolecular material for use.
4, according to claim 1,2 or 3 described a kind of electro-plating methods that are applied to micro electronmechanical processing procedure, it is characterized in that this double-side conduction substrate is the single-layer ceramic substrate.
5, according to claim 1,2 or 3 described a kind of electro-plating methods that are applied to micro electronmechanical processing procedure, it is characterized in that this double-side conduction substrate is a multilayer ceramic substrate.
6, according to claim 1,2 or 3 described a kind of electro-plating methods that are applied to micro electronmechanical processing procedure, it is characterized in that this double-side conduction substrate is a printed circuit board (PCB).
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CN 200510007675 CN1669907A (en) | 2005-02-07 | 2005-02-07 | Electroplating method for micro-electromechanical system |
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CN 200510007675 CN1669907A (en) | 2005-02-07 | 2005-02-07 | Electroplating method for micro-electromechanical system |
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Cited By (7)
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CN101870450A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101870449A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Multilayer line manufacturing process of wafer-level micro electromechanical system chip encapsulation technology |
CN101870447A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101870448A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Preparation process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101930931B (en) * | 2009-06-18 | 2012-02-08 | 南亚电路板股份有限公司 | Packaging circuit substrate structure and manufacturing method thereof |
CN104089259A (en) * | 2014-07-09 | 2014-10-08 | 梅州江南电器有限公司 | Current-conducting plate and LED light source with same |
CN111812366A (en) * | 2020-08-05 | 2020-10-23 | 苏州韬盛电子科技有限公司 | Method for manufacturing wafer test micro probe based on micro electro mechanical system |
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2005
- 2005-02-07 CN CN 200510007675 patent/CN1669907A/en active Pending
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101870450A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101870449A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Multilayer line manufacturing process of wafer-level micro electromechanical system chip encapsulation technology |
CN101870447A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101870448A (en) * | 2009-04-22 | 2010-10-27 | 昆山西钛微电子科技有限公司 | Preparation process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101870447B (en) * | 2009-04-22 | 2014-03-05 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101870448B (en) * | 2009-04-22 | 2014-03-19 | 昆山西钛微电子科技有限公司 | Preparation process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101870449B (en) * | 2009-04-22 | 2014-03-19 | 昆山西钛微电子科技有限公司 | Multilayer line manufacturing process of wafer-level micro electromechanical system chip encapsulation technology |
CN101870450B (en) * | 2009-04-22 | 2014-04-16 | 昆山西钛微电子科技有限公司 | Manufacturing process of chip through silicon via (TSV) packaging technology of micro electro mechanical system (MEMS) |
CN101930931B (en) * | 2009-06-18 | 2012-02-08 | 南亚电路板股份有限公司 | Packaging circuit substrate structure and manufacturing method thereof |
CN104089259A (en) * | 2014-07-09 | 2014-10-08 | 梅州江南电器有限公司 | Current-conducting plate and LED light source with same |
CN111812366A (en) * | 2020-08-05 | 2020-10-23 | 苏州韬盛电子科技有限公司 | Method for manufacturing wafer test micro probe based on micro electro mechanical system |
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