CN1565150A - Interlayer connection structure and its building method - Google Patents
Interlayer connection structure and its building method Download PDFInfo
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- CN1565150A CN1565150A CNA028194772A CN02819477A CN1565150A CN 1565150 A CN1565150 A CN 1565150A CN A028194772 A CNA028194772 A CN A028194772A CN 02819477 A CN02819477 A CN 02819477A CN 1565150 A CN1565150 A CN 1565150A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4647—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer around previously made via studs
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
- H05K3/4652—Adding a circuit layer by laminating a metal foil or a preformed metal foil pattern
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0347—Overplating, e.g. for reinforcing conductors or bumps; Plating over filled vias
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09009—Substrate related
- H05K2201/091—Locally and permanently deformed areas including dielectric material
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/025—Abrading, e.g. grinding or sand blasting
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/06—Lamination
- H05K2203/068—Features of the lamination press or of the lamination process, e.g. using special separator sheets
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
A method for building an interlayer connection structure where wiring layers (22) or metallic layers (27) formed on both sides of an insulating layer (26) are interlayer-connected through an interlayer connection projection (B), comprising the steps of stacking at least a sheet member (2) deformable concavely, a metallic layer forming member, and a thermally-adhesive insulating layer forming member in this order of mention between a press surface (1) and a body to be laminated and having the interlayer connection projection, conducting hot press of the stack using the press surface to produce a laminate having a projection in a position corresponding to the interlayer connection projection and having a metallic layer on its surface, removing the projection of the laminate to expose the interlayer connection projection, and electrically connecting the exposed interlayer connection projection and the metallic layer disposed near the interlayer connection projection with the insulating layer interposed therebetween, whereby the thickness of the insulating layer between layers can be uniformed, and the planarization of the surface and thickness control of the insulating layer can be effected even if the insulating layer contains reinforcing fibers. An interlayer connection structure built by the method and a multilayer wiring board are also disclosed.
Description
Technical field
The present invention relates on multi-layer wire substrate etc., be used to form the formation method of interlayer syndeton of the radiator structure of conduction connecting structure between wiring layer or interlayer, and the interlayer syndeton and the multi-layer wire substrate that form with this method.
Background technology
In recent years, be accompanied by the miniaturization and the multifunction of electronic equipment etc., the circuit board for electronic unit is installed has improved multiple stratification, thin layerization, the requirement of figure miniaturization etc.Therefore, constitute the insulating barrier of multi-layer wire substrate or the tendency that wiring layer also has thin layerization.In addition, under situation, must carry out high-precision control to the thickness of insulating barrier or wiring layer corresponding to the impedance of high-frequency signal control characteristic.
When making multi-layer wire substrate, the operation that forms metal level and wiring figure on insulating barrier must be arranged, as its method, general employing will have the stacked method of Copper Foil of resin, and the metal level etching that will utilize this method to form forms the method for figure etc.And then also have in transfer printing and form wiring layer on basis material, it is transferred to method on the insulating barrier of the heat adhesiveness on the outermost layer of being located at circuit board.
On the other hand, someone has proposed some for being necessary conducting electricity the structure of using between the connecting wiring layer on the multi-layer wire substrate, be formed on wiring layer or metal level on the two sides of insulating barrier, connect the scheme of the interlayer syndeton that projection connects at interlayer via interlayer.For example, in the Te Kaiping 6-314878 communique, disclose a kind of on the lower-layer wiring layer, after the plating resist of stacked throughhole portions opening, by the cathode copper plating, form the cylindrical metal body in open interior, then, after removing the plating resist, on whole, be coated with insulative resin, after its leveling, by forming the upper strata wiring, the method between the conduction connecting wiring layer.
In addition; in the WO00/52977 communique; disclosing a kind of additional metals that will demonstrate corrosion resistance when constituting the metal etch of cylindrical metal body is layed onto on whole of the non-figure portion that comprises the lower-layer wiring layer; form the protection metal level; on whole of this protection metal level; form the coat of metal of the aforementioned cylindrical metal body of formation by the electrolysis plating after; on the surface portion of each coating, form mask layer; after etching coating forms the cylindrical metal body; carry out can etch the etching of protection metal level; after removing the protection metal level of the non-figure of lining portion; on whole, be coated with insulative resin; after the leveling; form the upper strata wiring layer, thus the method that conduction between the wiring layer is connected.
But in the method for above-mentioned this coating insulative resin, formation insulating barrier, coating is solidified, and a series of operation such as leveling is very complicated, simultaneously, also is difficult to the precision (leveling degree) of the thickness of maintenance insulating barrier.
On the other hand, have severally by on the wiring layer that forms the metallic object projection (comprising the cylindrical metal body) that connects usefulness between wiring layer, the resin sheet of stacked heat adhesiveness or have the Copper Foil resin sheet forms the method for insulating barrier, also is known.Particularly, under the stacked situation of the resin sheet that will have Copper Foil, because the while laminated copper foil, so having can be by forming its etching the advantage of the wiring layer on upper strata.
But in the conduction connecting structure that forms like this, metallic object projection and Copper Foil are crimping, in addition, are mingled with resin between the two easily, are difficult to even contact between face and the face, and the reliability that the conduction between the not talkative wiring layer connects is very high.Particularly, include at insulating barrier under the situation of reinforcing fibre, reinforcing fibre hinders contact, can not conduct electricity connection.
Summary of the invention
Therefore, the objective of the invention is, a kind of thickness homogenizing that can make between the insulating barrier of interlayer is provided, even contain at insulating barrier under the situation of reinforcing fibre, also can make surfacingization or carry out the formation method of interlayer syndeton of control of the thickness of insulating barrier, and a kind of interlayer syndeton and multi-layer wire substrate that utilizes this method to form is provided.
Above-mentioned purpose reaches by the present invention as described below.In addition, the formation method of interlayer syndeton of the present invention comprises first invention～the three invention.
Promptly, the formation method of the interlayer syndeton of first invention, connect projection at the wiring layer or the metal level that are formed on the two sides of insulating barrier in the formation method of the interlayer syndeton that interlayer connects via interlayer, it is characterized in that, it comprises: (1a) connect between the stacked body of projection between stamping surface and formation aforementioned layers, at least successively configuration allows the sheet material of concavity distortion, metal level forms material, and the insulating barrier of heat adhesiveness forms the operation of material, (1b) under this configuration status, utilize stamping surface to add drop stamping, acquisition has protuberance on the position that connects projection corresponding to interlayer, form the operation of the duplexer of metal level from the teeth outwards, (1c) remove the protuberance of this duplexer, make interlayer connect the operation that projection is exposed, and the interlayer that (1d) will expose connect projection and conduct electricity the operation that is connected across the close with it metal level of insulating barrier.
Formation method according to the interlayer syndeton of first invention, because configuration allows the sheet material of concavity distortion between stamping surface and stacked body, the insulating barrier formation material and the stacked body that metal level are formed material and heat adhesiveness add drop stamping, so, in the position that connects projection corresponding to interlayer, produce the concavity distortion of sheet material, can guarantee that insulating barrier forms the place of keeping out of the way of material.Therefore, the thickness of insulating barrier that interlayer connects the periphery of projection is difficult to change, and in addition, is removed in the operation of back owing to be equivalent to keep out of the way the protuberance in place, also becomes smooth so interlayer connects the top of projection.Thereby, in the uniform while of the thickness that makes the insulating barrier that is mixed in interlayer, even in insulating barrier, comprise under the situation of reinforcing fibre, also can form can make surfacingization the interlayer syndeton.In addition, be sheet because the insulating barrier of heat adhesiveness forms material, so, compare with coating method, can be more suitable in the thin layerization of insulating barrier.Simultaneously owing to removing the protuberance of duplexer, the interlayer projection is exposed after, the interlayer projection that will expose is conducted electricity with metal level around it and is connected, so, the metal level on insulating barrier two sides can be conducted electricity connection.In addition, because in the method for using the sheet material that allows the concavity distortion, even under the different situation in the formation position of interlayer connection projection, can use identical method.So it becomes a kind of mass-produced method that is adapted to.
As aforementioned sheet material, preferably use the sheet rubber that has buffering paper, the metal forming of release property or have release property.In this case, on the duplexer that obtains producing appropriate concavity distortion on the sheet material, can form suitable protuberance, in addition, the demoulding easily between the metal level of sheet material and duplexer.
In addition, the formation method of the interlayer syndeton of second invention, connect projection at the wiring layer or the metal level that are formed on two faces of insulating barrier in the formation method of the interlayer syndeton that interlayer connects via interlayer, it is characterized in that, it comprises: (2a) with aforementioned layers between be connected on the stamping surface of the opposed position of projection, form recess, perhaps, configuration is used to form the operation of the plate of this recess, (2b) between stamping surface and formation aforementioned layers, connect between the stacked body of projection, at least dispose the operation that metal level forms the insulating barrier formation material of material and heat adhesiveness successively, (2c) be configured under the state this, carry out pressurized, heated with stamping surface, acquisition forms on the position that connects projection corresponding to interlayer has protuberance, form the operation of the duplexer of metal level on the surface, (2d) remove the protuberance of aforementioned duplexer, make interlayer connect the operation that projection is exposed, and the interlayer that (2e) will expose connect projection and conduct electricity the operation that is connected across the close with it metal level of insulating barrier.
Formation method according to the interlayer syndeton of second invention, owing to utilize at the stamping surface that is connected formation recess on the opposed position of projection with interlayer or for the stamping surface of the plate that forms recess arrangement, metal level is formed material and heat adhesiveness insulating barrier formation material and stacked body add drop stamping, so, can guarantee that the formation position insulating barrier in interlayer connection projection forms the place of keeping out of the way of material.Therefore, the thickness of insulating barrier that interlayer connects the periphery of projection is not easy to change, and, be removed in the operation of back owing to be equivalent to keep out of the way the protuberance in place, so, interlayer connect projection above, also become smooth.Thereby, when making the thickness homogenizing of the insulating barrier that is mixed in interlayer,, also can form the interlayer syndeton that the surface can leveling even in insulating barrier, comprise under the situation of reinforcing fibre.In addition, be sheet because the insulating barrier of heat adhesiveness forms material, so, compare with coating method, can be suitable for the thin layerization of insulating barrier.Simultaneously, because after removing the protuberance of duplexer, making interlayer connect projection to expose, the interlayer that will expose connects projection and is connected with metal level conduction around it, so the metal level on the two sides of insulating barrier can be conducted electricity connection.
The formation method of the 3rd interlayer syndeton of the present invention, connect projection at the wiring layer or the metal level that are formed on the insulating barrier two sides in the formation method of the interlayer syndeton that interlayer connects via interlayer, it is characterized in that, it comprises: (3a) will form the stacked body that connects projection between aforementioned layers, the insulating barrier of heat adhesiveness forms material, and metal level forms material so that connect the stacked incorporate operation of mode that the upper surface of projection is positioned at the near surface of aforementioned metal layer formation material between aforementioned layers, (3b) the aforementioned metal layer is formed in the material, at least with between aforementioned layers be connected the operation of the partially-etched formation opening that the upper surface of projection repeats, (3c) remove at least a portion of the insulating barrier that exposes from this opening, the operation that the upper surface that connects projection is exposed, and, form the operation of conductor layer at least up to the inner peripheral surface of aforementioned opening (3d) from connecting the upper surface of projection between the aforementioned layers of exposing.
According to the formation method of the interlayer syndeton of the 3rd invention, to form material stacked owing to utilize the insulating barrier of heat adhesiveness to form material and metal level, so profile pattern is good, also is favourable in manufacturing process.In addition, be sheet because the heat adhesiveness insulating barrier forms material, so, compare with coating method, be suitable for the thin layerization of insulating barrier.And then, owing to will be connected the partially-etched formation opening that the upper surface of projection repeats with interlayer, so by removing insulating barrier via this opening, the upper surface that can make interlayer connect projection exposes.Thus, at least can form conductor layer until the inner peripheral surface of aforementioned opening owing to connect the upper surface of projection from interlayer, so, different with the simple crimping structure of prior art, can conduct electricity connection reliably, so, improve wiring layer is connected the conduction connection of projection with interlayer reliability.
On the other hand, interlayer syndeton of the present invention, connect projection at the wiring layer or the metal level that are formed on the two sides of insulating barrier in the interlayer syndeton that interlayer connects via interlayer, it is characterized in that, utilization is across insulating barrier and approaching aforementioned wiring layer or metal level and conductor layer, and the upper surface that this interlayer is connected projection connects from the part that insulating barrier exposes.According to interlayer syndeton of the present invention, owing to utilize the upper surface that this interlayer connects projection is coupled together from the part that insulating barrier exposes across the approaching aforementioned wiring layer of insulating barrier or metal level and conductor layer, so, can make with formation method of the present invention, therefore can make the thickness homogenizing of imbedded insulating barrier, even become under the situation that in insulating barrier, comprises reinforcing fibre, also can make the structure of the thickness of surfacingization and control insulating barrier.
In the superincumbent description, preferred aforementioned conductor layer forms by plating.Under the situation that conductor layer forms by plating, can make the higher interlayer syndeton of reliability that conduction connects.
On the other hand, this present invention's multi-layer wire substrate is a kind of multi-layer wire substrate that above-mentioned interlayer syndeton is provided in arbitrary interlayer that it is characterized by.According to circuit board of the present invention, because the interlayer syndeton is present in an interlayer in office, so, can make the thickness of insulating layer homogenizing that is mixed in interlayer, even in insulating barrier, comprise under the situation of reinforcing fibre, also can make surfacingization and carry out the control of thickness of insulating layer, become multi-layer wire substrate with the high interlayer syndeton of conduction connection reliability.
Description of drawings
Fig. 1～Fig. 2 is the process chart of an example of formation method of the interlayer structure of first invention of expression.
Fig. 3 is the process chart of another example of formation method of the interlayer structure of first invention of expression.
Fig. 4～Fig. 5 is the process chart of an example of formation method of the interlayer structure of second invention of expression.
Fig. 6～Fig. 9 is the process chart of an example of formation method of the interlayer structure of second invention of expression.
Embodiment
(the formation method of the interlayer syndeton of first invention)
In this form of implementation, description will be formed on wiring layer 22 and the metal level 27 that is formed on its upper strata via insulating barrier 26 on two faces of central substrate and be connected projection B through interlayers and couple together the example of syndeton between cambium layer at interlayer.
At first, shown in Fig. 1 (1), prepare on two faces of basis material 21, to form the figure of wiring layer 22 and then at the stacked body L that connects projection B on this wiring layer 22 between cambium layer.At this moment, the pattern forming method of wiring layer 22 can adopt any method, for example, can adopt the method for using the etching resist, or uses figure plating resist method etc.Metal as constituting wiring layer 22 uses copper usually, nickel, and tin etc. preferably use copper.As basis material 21, can adopt by glass fibre and polyimide resin the basis material that various reaction curable resins such as epoxy resin constitute.The thickness of wiring layer 22 is not for example about 5～50 μ m.
In the method that connects projection B on the wiring layer 22 between cambium layer, conduct electricity the method that connects so long as can be connected projection B with interlayer at wiring layer 22, can adopt any method, for example, can list the method that forms by the metal level etching, by the method that the metal level plating forms, utilize the formation method of conductive paste etc.
Utilize the etched formation method of metal level, in WO00/52977 communique and WO00/30420 communique, disclose the detailed content of this method.Utilize the formation method of metal-plated, open the detailed content that discloses this method in the flat 6-314878 communique the spy.
In this form of implementation, the formation method of utilizing the WO00/52977 communique to describe is described at the example that connects projection B on the wiring layer 22 between cambium layer.According to this formation method, interlayer connects projection B, is made of substrate conductive layer 10 and protection metal level 11 and coating 24.
Specifically, the formation method that interlayer connects projection B comprises: the metal that will constitute the cylindrical metal body demonstrates corrosion resistance when carrying out etching other coating metal on interior roughly whole, forms the operation of protecting metal level 11 in the non-figure portion of the wiring layer 22 that comprises lower floor; On roughly whole of this protection metal level 11, form the operation of the coat of metal 24 that constitutes the cylindrical metal body by the electrolysis plating; On the surface portion of the aforementioned cylindrical metal body of the formation of this coating 24, form the operation of mask; Carry out the etched operation of aforementioned coating 24; And, carry out at least can the aforementioned protection metal level 11 of etch etching, remove the operation of the protection metal level 11 of the aforementioned non-figure of lining portion at least.At this moment, on whole of the non-visuals of the wiring layer 22 that comprises the lower floor that is pre-formed figure, carry out electroless plating and apply, form after the substrate conductive layer 10, further, form protection metal level 11 roughly carrying out the electrolysis plating on whole.
(1a) of the present invention operation shown in Fig. 1 (2), is connecting between stamping surface 1 and cambium layer between the stacked body L of projection B, and configuration allows the sheet material 2 of concavity distortion at least successively, and metal level forms material 3, and the heat adhesiveness insulating barrier forms material 4.In this form of implementation, enumerated and used metal level to form material 3 and the stacked in advance incorporate Copper Foil RC that has resin of insulating barrier formation material 4, separate the example of configuration sheet material 2 separately with stamping surface 1.
This Copper Foil RC that has resin has various products to sell on market, can use any in the middle of them.In addition, metal level forms material 3 and insulating barrier forms material 4, also can distinguish configuration separately.
Forming material 4 as insulating barrier, so long as distortion when stacked when waiting curing by heating, has thermal endurance that circuit board requires, can be any material.Specifically, can list polyimide resin, phenolic resins, complex (mylar) of various reaction curable resins such as epoxy resin or they and glass fibre, ceramic fibre, aramid fibre etc. etc.Wherein, solidify, can be preferred by adding drop stamping with the stacked incorporate material of stacked body L.
Insulating barrier forms the thickness of material 4, and preferably after bonding, the upper surface that makes interlayer connect projection B is positioned near or the position above more leaning on than this upper surface of upper surface of metal level 27.Specifically, insulating barrier forms the thickness of material 4, is preferably-40 μ m～+ 20 μ m that interlayer connects the height of projection B, more preferably connects-20 μ m～+ 10 μ m of the height of projection B for interlayer.In addition, in the present invention, owing to interlayer projection B and metal level are formed material 3 crimping, do not conduct electricity connections by adding drop stamping, so, have that thickness and precision that insulating barrier forms material 4 requires and the advantage of undue strictness.
The thickness of sheet material 2 preferably is thicker than half of height that interlayer connects projection B, and it is thick preferably to connect the height of projection B than interlayer.By adjusting the thickness or the hardness of sheet material 2, can control the height of the protuberance 5 that utilizes the duplexer that adds drop stamping formation.Usually,, increase its hardness, can dwindle the height or the volume of the protuberance 5 of formed duplexer by dwindling the thickness of sheet material 2.
As the collocation method when simultaneously stacked, can between the stamping surface 1 of the stamping surface 1 of counterdie and patrix, dispose each layer according to the sequential cascade shown in Fig. 1 (2) on the two sides.
(1b) of the present invention operation shown in Fig. 2 (3), at above-mentioned configuration status, utilizes stamping surface 1 to add drop stamping, obtains the duplexer that has protuberance 5 on the position that connects projection B with respect to interlayer, form metal level 27 from the teeth outwards.In this operation, sheet material 2 carries out the concavity distortion because interlayer connects the existence of projection B when adding drop stamping, so, on duplexer, form corresponding with it protuberance 5.Particularly, form material 4 at insulating barrier and comprise under the situation of reinforcing fibre, the height of protuberance 5 or volume increase.
As adding hot stamping method, can utilize heating decompressor (the heat lamination device adds hot stamping machine) etc. to carry out, at this moment,, atmosphere can be made vacuum (vacuum lamination apparatus etc.) for fear of sneaking into of air.Condition such as heating-up temperature, pressure, can form material or the thickness that material 4 and metal level form material 3 according to insulating barrier suitably sets, but,, preferably in the scope of 0.5～30MPa, adjust according to the sum that is formed on the interlayer connection projection B on the stacked body L as pressure.Thus, insulating barrier forms material 4 and metal level forms the surface configuration distortion of material 3 according to stacked body L, forms the insulating barrier 26 and the metal level 27 that solidify.After the formation, usually with the duplexer demoulding, cooling.
(1c) of the present invention operation shown in Fig. 2 (4), is removed the protuberance 5 of this duplexer, makes interlayer connect projection B and exposes.At this moment, remove interlayer simultaneously and connect the upper surface high part of the upper surface of projection B, make it leveling than the metal level 27 of duplexer.
The method of removing as protuberance 5, it is preferred utilizing grinding or abrasive method, can list to use and have the method for a plurality of adamantine inserted tools along the grinding attachment of the carbide rotating tool of the radial direction configuration of rotating disk, utilize sand-blasting machine, belt sander, abrasive machine, flat stone mill is chipped, the method for hard abrasive formed products etc. etc.When using grinding attachment, one side makes this carbide rotating tool rotation, and one side makes it to move along the upper surface of the circuit board of fixed support, can be with the upper surface leveling.In addition, as Ginding process, can list more easy Ginding process such as utilizing belt sander, polishing.When as described herein, when forming protuberance 5 on duplexer, this part of a grinding is easily, can be more reliably with its global planarization.
(1d) of the present invention operation, shown in Fig. 2 (5), the interlayer that will expose connects the projection B metal level approaching with it with separating insulating barrier 26 27 conductions and is connected.In this form of implementation, enumerated with respect to comprising upper surface that interlayer connects projection B roughly whole at interior metal level 27, utilize plating to form the example of conductor layer 28.Thus, via the conductor layer 28 on the upper surface that joins interlayer connection projection B to, interlayer is connected projection B be connected with metal level 27 conductions.
Apply for electroless plating, use copper usually, nickel, the plating bath of tin etc., these metals can be identical with the metal that constitutes metal level 27, also can be different, preferably adopt copper.The plating bath that electroless plating applies is corresponding with various metals, is known, and commodity selling is arranged on the market.Usually, the component as liquid contains metal ion source, alkali source, reducing agent, chelating agent, stabilizer etc.In addition, also can be before electroless plating apply, plating coating catalysts such as depositing Pd.For the electrolysis plating, also can carry out with known method.
In the present invention, and then can carry out the etching of conductor layer 28 and metal level 27, form metallic pattern.Constituting under conductor layer 28 situation identical with the metal of metal level 27, can carry out etching simultaneously, under different situations, can carry out etching successively.
The interlayer syndeton of the present invention that can obtain as mentioned above, shown in Fig. 2 (5), wiring layer 22 or metal level 27 on the two sides that is formed at insulating barrier 26, via interlayer projection B in the interlayer syndeton that interlayer connects, it is characterized in that, this interlayer is connected the part that the upper surface of projection B exposes from insulating barrier 26, utilize to separate the close with it aforementioned wiring layer 22 of insulating barrier 26 or metal level 27 and conductor layer 28 (preferred coating), couple together.
On the other hand, multi-layer wire substrate of the present invention is characterized by, and any one interlayer therein is equipped with above-mentioned interlayer syndeton.In illustrated embodiment, the ground floor and the second layer be connected and the 3rd layer with the 4th layer be connected, constituted 4 laminar substrates that adopt interlayer syndeton of the present invention.And then, form same interlayer structure by upper strata in both sides, can form the multi-layer wire substrate of further multiple stratification.In addition, with respect to central substrate or two sides metal foil layer lamination, also can form interlayer syndeton of the present invention.
(another form of implementation of first invention)
Below, another form of implementation of the present invention is described
(1) in aforementioned form of implementation, enumerate the use metal level and formed material and insulating barrier formation material, the stacked in advance incorporate Copper Foil that has resin separates the example of configuration sheet material separately with stamping surface, but also can adopt the collocation method shown in Fig. 3 (a)～(b).
Example shown in Fig. 3 (a) forms sheet material 2 on stamping surface 1.Sheet material 2 can be formed directly on the stamping surface 1, also can utilize cement and binding agent bonding sheet material 2.In addition, also release layer can be set on the surface of sheet material 2.Particularly preferably be to use the silicone rubber sheet of release property and excellent heat resistance.
Example shown in Fig. 3 (b) is to dispose sheet material 2 respectively between stamping surface 1 and stacked body L, when metal level forms material 3 and insulating barrier and forms material 4, forms between the material 3 at sheet material 2 and metal level, appends configuration release sheet 6.As release sheet 6, can list the fluorine resin film, silicone resin film, various processing release papers, fiber reinforcement fluorine resin film, fiber reinforcement silicone resin film etc.
(2) in aforementioned form of implementation, enumerated for the wiring layer that connects projection between cambium layer, form interlayer syndeton of the present invention the example of method, but, also can for do not form wiring figure or form before metal level on when connecting projection between cambium layer, can be the same with aforementioned form of implementation, form interlayer syndeton of the present invention.In this case, except that the stacked body difference of using, can be implemented with identical operation.For the goods of such acquisition, can be used as two sides metal foil layer lamination and use, also above-mentioned metal level and metal forming etching simultaneously can be formed figure.In addition, can metal level not formed figure yet, use as ground plane or bus plane.
(3) in aforementioned form of implementation, enumerated the example that forms conductor layer by plating, but coating that also can be by conducting resinl, sputter evaporation, vacuum evaporation etc. are carried out.In addition, also they and electrolysis plating etc. can be combined to form conductor layer.
Under the situation of coating conducting resinl, can utilize silk screen printing, extrusions etc. are coated with, and as conducting resinl, can use any conducting resinl that is used for circuit board.
(4) in aforementioned form of implementation, enumerated central substrate that the two sides is formed wiring layer as stacked body, at the example of syndeton between cambium layer on the two sides, but also syndeton between the one side side cambium layer of substrate only.The stamping surface of heating usefulness only is set in one side in this case.
(the formation method of the interlayer syndeton of second invention)
The formation method of the interlayer syndeton of second invention, be that the wiring layer or the metal level that form on the two sides of insulating barrier connect projection in the formation method of the interlayer syndeton of interlayer connection projection via interlayer, comprise:: (2a) with aforementioned layers between be connected on the stamping surface of the opposed position of projection, form recess, perhaps, the operation of the plate that this recess of configuration formation is used, (2b) connecting between stamping surface and formation aforementioned layers between the projection De Be duplexer, at least dispose the operation that metal level forms the insulating barrier formation material of material and heat adhesiveness successively, (2c) be configured under the state this, carry out the punching press heating based on stamping surface, acquisition forms on the position that connects projection corresponding to interlayer has protuberance, form the operation of the duplexer of metal level on the surface, (2d) remove the protuberance of aforementioned duplexer, make interlayer connect the operation that projection is exposed, and the interlayer that (2e) will expose connects projection and conducts electricity the operation that is connected across the close with it metal level of insulating barrier, wherein, have only the formation method of syndeton between (2a) operation and (2b) operation and aforementioned layers different.Below, only difference is described.
At first, describe for situation about under the state shown in Fig. 4 (a), being configured.In this form of implementation,, on the stamping surface 1 that is connected the opposed position of projection B with interlayer, form recess 1a in (2a) operation.
The size of the opening shape of the recess 1a of stamping surface 1 can determine that the aperture area of preferred recess 1a connects the area of the upper surface of projection B greater than interlayer according to shape and size that interlayer connects projection B.In addition, it is roughly the same preferably the degree of depth of recess 1a to be set for the volume that makes the volume of recess 1a be connected projection B with interlayer, or greater than this volume.The volume of more preferably setting with interlayer connection projection B is identical.Specifically, for example the degree of depth of recess 1a is more than 5 μ m, preferably more than 10 μ m.
Overall shape as the recess 1a of stamping surface can list the frustum of a cone, cylinder, and square frustum, square column etc., but preferred shape is that as the frustum of a cone or square frustum, sidewall is taper.
Method as form recess 1a on stamping surface 1 can list and utilize etching partially of etching resist, casting, NC processing etc.Particularly, utilizing the figure when connecting projection B between cambium layer to carry out etching, is favourable for precision and cost.
In (2b) operation, connecting between the stacked body L of projection B between stamping surface 1 and cambium layer, dispose metal level at least successively and form material 3, and the insulating barrier of heat adhesiveness forms material 4.In addition, form between the material 3 at stamping surface 1 and metal level, also can the suitable padded coaming of clamping and release sheet etc.
Secondly, situation about being configured with the state shown in Fig. 4 (b) is described.In this form of implementation, in (2a) operation, on the stamping surface 1 that is connected the opposed position of projection B with interlayer, configuration forms the plate 7 that recess is used.On this plate 7, on the formation position of recess, through hole 7a is set.The material of plate 7 can be that metal, resin etc. are any.
As the method that forms through hole 7a, can list the etching of using the etching resist and etch partially casting, NC processing, punching, boring etc.Plate 7 is aimed at rightly with respect to stacked body L.
And then, describe for situation about being configured at the state shown in Fig. 5 (a).In this form of implementation, be a kind of in (2a) operation, when configuration forms the plate 8 that recess 8a uses on the stamping surface 1 that is connected the opposed position of projection B with interlayer,, on plate 8, form the example that metal level forms the layer of material 3 for configuration metal level in (2b) operation forms material 3.In (2a) operation, on the stamping surface 1 that is connected the opposed position of projection B with interlayer, form recess 1a, similarly, also can on stamping surface 1, form the layer that metal level forms material 3.
In addition, when on plate 8 or stamping surface 1, forming the layer of metal level formation material 3, also can the clamping release layer.Release layer, preferably the layer by forming material 3 at metal level is with the formation of electrolysis plating and be metal.As metal release layer, be under the situation of copper at metal level, preferably use nickel, stainless steel particularly preferably is to apply the nickel that forms by electroless plating.At release layer is under the situation of insulating properties such as pottery or resin, for the formation of metal level, utilizes electroless plating to apply the combination that waits with the electrolysis plating.
(the formation method of the interlayer syndeton of the 3rd invention)
In this form of implementation, illustrate for the interlayer on the wiring layer on the two sides that is formed on central substrate to connect projection, form the example of conduction connecting structure of the present invention.
At first, same with first invention shown in Fig. 6 (1), prepare on the two sides of base material 21 figure form wiring layer 22 by laminated body.
Secondly, shown in Fig. 6 (2), on wiring layer 22, be formed on interlayer and conduct electricity the interlayer that connects usefulness and connect projection B.Interlayer connects the formation method of projection B, can conduct electricity the method that connects between the projection B so long as can connect at wiring layer 22 and interlayer, can adopt any method, for example, can list the method that the etching by metal level forms, perhaps, the method that the plating by metal forms etc.The former discloses the detailed content of its formation method in WO00/52977 communique and WO00/30420 communique, for the latter, open the detailed content that discloses its formation method in the flat 6-314878 communique the spy.
In this form of implementation, the example that forms cylindrical metal body 24 with the formation method of utilizing the WO00/52977 communique to describe on wiring layer 22 is that prerequisite describes.According to this formation method, between cylindrical metal body 24 and wiring layer 22, clamp substrate conductive layer 10 and protection metal level 11.In the present invention, these layers are also nonessential, under the situation of cylindrical metal body 24 and other metal formation of wiring layer 22 usefulness, can omit.
On the other hand, in the present invention, use the insulating barrier of heat adhesiveness to form material and metal level formation material, they and stacked body are stacked integrated, also can distinguish stacked in advance integrated but insulating barrier formation material and metal level form material.In this form of implementation, enumerated the example that uses the metal forming 27 that forms caking property insulating barrier 26a.This plywood has extensive stock to sell on market, can use any in the middle of them.For example,, can use any metal as metal forming 27, but from conductivity, easy etching, viewpoints such as cost are set out, and most preferably use copper general in the wiring figure.In addition, the insulating barrier 26a side on the surface of metal forming 27 in order to improve the caking property with resin etc., also can be carried out melanism and handle.
As caking property insulating barrier 26a, so long as distortion when stacked, solidify by heating etc. in, have the desired thermal endurance of circuit board, can adopt any material.Specifically, can list polyimide resin, complex (mylar) of various reaction curable resins such as epoxy resin and they and glass fibre, aramid fibre etc. etc.Wherein, solidify by adding drop stamping (heat lamination), can be with the stacked incorporate material of central substrate, because can simplified manufacturing technique, so be preferred.
The thickness of insulating barrier 26a, the upper surface of interlayer connection projection 24 is positioned at the thickness of the near surface of aforementioned metal paper tinsel 27 after preferably being equivalent to bond.Specifically, this thickness is equivalent to get final product to the height that interlayer connects the upper surface of projection 24 from the surface of basis material 21.In addition, in the present invention, conduct electricity with metal forming 27 crimping and be connected owing to need not this stacked operation interlayer be connected projection 24, so, have thickness and precision to insulating barrier 26a and require the advantage that is not very strict.
(3a) of the present invention operation, shown in Fig. 7 (3), be positioned at the mode of position of the near surface of metal forming 27 with the upper surface 24a that interlayer is connected projection 24, will be formed with wiring layer 22 and the metal forming 27 that forms close-burning insulating barrier 26a that interlayer connects projection 24, stacked integrated.Here, the near surface of so-called metal forming 27 also can contact with metal forming 27, the distance that preferred 10 μ m are following.In addition, also can replace wiring layer 22, use the metal level (describing) before forming wiring figure about this point back.
As stacked incorporate method, about the central substrate that connects projection 24 between cambium layer etc., laminated configuration has the metal forming 27 of insulating barrier 26a, adds drop stamping (heat lamination adds drop stamping).At this moment, for fear of sneaking into of air, atmosphere can be formed vacuum (vacuum lamination).In addition, conditions such as heating-up temperature are suitably set according to the material of insulating barrier 26a.Thus, form according to the surface configuration distortion of central substrate and the insulating barrier 26 that solidifies.
(3b) of the present invention operation, shown in Fig. 7 (4)～(5), in aforementioned metal paper tinsel 27, to the upper surface 24a that is connected projection B between major general and aforementioned layers repeat partially-etched, form opening 27a.Here, be equivalent to the upper surface 24a that interlayer connects the cylindrical metal body 24 of projection B, need not to be fully smooth, under situation about forming, become curved surface easily by plating.In this case, with the part beyond the perisporium of cylindrical metal body 24 as upper surface 24a.
In addition, in the present invention, the part that the so-called upper surface 24a that is connected projection B with interlayer repeats is meant, the upper surface 24a that interlayer is connected projection B projects to zone on the metal forming 27 and the zone of opening 27a repeats (to comprise in full accord, part is consistent, the situation when comprising one of them) part.In the present invention, from increasing the viewpoint of the area that conduction connects, preferably interlayer is connected projection B, promptly, the upper surface 24a of cylindrical metal body 24 is projected to more than 80% of zone on the metal forming 27, especially preferably it 100% is included in the zone of opening 27a.But when the area of the opening 27a of metal forming 27 was excessive, width that should metal remained paper tinsel 27 around it also increased, so, be unfavorable for the miniaturization of wiring figure.Therefore, the area of opening 27a is preferably 0.8～5 times of area that interlayer connects the upper surface 24a of projection B.
As engraving method, can be dry etching, but preferably adopt wet etching, wherein, more preferably adopt the method for photoresists such as dry film photoresist.Photoresist is meant and utilizes light to cause photolysis, photo-crosslinking, perhaps photopolymerisable low-molecular-weight/or the resin combination of the composition of HMW that contains.For lining, can adopt the method for solidifying etc. with the method for dry film lamination or with the photosensitive polymer combination coating.Dry film (photoresist) exists organic solvent develop type and aqueous alkali developable, utilizes photopolymer layer press with heating crimping roller etc. etc., carries out thermo-compressed (lamination).The coating of photosensitive polymer combination can be carried out with various coating machines.
Secondly,, develop, remove the former part forming part or the exposure of its inversion section of opening 27a.This exposure, middle clamping mask perhaps utilizes directly exposure such as optical plotter, utilizes exposure machine, carries out with ultraviolet ray etc. usually.For development, use the developer solution corresponding with the kind of dry film, for example,, use trichloroethanes etc. for the organic solvent developable, for the aqueous alkali developable, use sodium carbonate etc.
As mentioned above, form etching resist 38 with the opening 38a shown in Fig. 7 (4).Secondly, shown in Fig. 7 (5), use etching solution formation opening 27a corresponding to the material of metal forming 27.As etching solution, can list commercially available alkali etching liquid, chloride etching solution, ammonium persulfate, hydrogen peroxide/sulfuric acid etc.
After etching finishes, as required, remove etching resist 38, can suitably select medicament to remove, peel off and remove etc. according to the kind of etching resist.For example, under the situation of dry film photoresist, for example,, can utilize carrene etc. to peel off, can utilize NaOH etc. to peel off for the aqueous alkali developable for the organic solvent developable.In addition, etching resist 38 remove also can and next (3c) operation carry out simultaneously.
(3c) of the present invention operation, shown in Fig. 8 (6), at least a portion of the insulating barrier 26 that will expose from opening 27a is removed, and the upper surface 24a that makes interlayer connect projection 24 exposes.Here, expose full the upper surface 24a outside that there is no need to make interlayer to connect projection 24, but from increasing the viewpoint of the area that conduction connects, it is preferred that upper surface 24a is all exposed.
Remove the method for insulating barrier 26, can adopt polishing, belt sander, mechanical grinding, laser radiation, plasma etching, transfer printing is peeled off etc., but preferred adopt to utilize spray processing, perhaps chemical corrosion, the method for optionally removing the insulating barrier 26 that exposes from opening 27a.Spray in the processing in sandblast etc., even also can obtain ground effect to the recess on surface, and owing to compare with metal and the insulating barrier of resin etc. can be removed quickly, so, the upper surface of cylindrical metal body is exposed.In addition, utilize chemical corrosion, equally also can optionally insulating barrier be removed.
As spraying processing, can list dry type or wet blast, metallic injection etc.As chemical corrosion, can use soup that optionally decomposes resin etc.In addition, when removing insulating barrier 26, the etching resist that before had been provided with 38 can be used as mask, in this case, etching resist 38 is removed after (3c) operation.
(3d) of the present invention operation, shown in Fig. 8 (7), the upper surface 24a that connects projection 24 from the interlayer that exposes forms conductor layer 29 at least up to the inner peripheral surface of opening 27a.In this form of implementation, provided by to the plating that comprises on upper surface 24a roughly whole in interior metal forming 27, form the example of conductor layer 29.Thus, interlayer connects projection 24 and metal forming 27, via join conductor layer 29a on the upper surface 24a to, join the conductor layer 29b on the inner peripheral surface of opening 27a to, the conductor layer 29c conduction around it connects.
Based on the formation of the conductor layer 29 of plating, can apply and electroless plating applies and the combination of electrolysis plating be carried out by electroless plating, but from improving the reliability that conduction connects, preferably apply and the combination of electrolysis plating forms by electroless plating.At this moment, the thickness of conductor layer 29 is preferably 1～50 μ m.
In electroless plating applies, use plating baths such as copper, nickel, tin usually, these metals can be identical with the metal that constitutes metal forming 27, and liquid can be different, are preferably copper.The plating bath that electroless plating applies, corresponding with various metals, be known, various commercially available commodity are arranged.Usually, the composition as plating bath includes metal ion source, alkali source, reducing agent, chelating agent, stabilizer etc.In addition, for the electrolysis plating, also can carry out with known method.
In this form of implementation, shown in Fig. 8 (8)～Fig. 9 (10), can further implement to carry out the etching of conductor layer 29 and metal forming 27, form (3e) operation of metallic pattern.Constituting under conductor layer 29 situation identical with the metal of metal forming 27, can carry out etching simultaneously, under different situations, can carry out etching successively.
At first, shown in Fig. 8 (8), make dry film photoresist etc. stacked, shown in Fig. 9 (9), expose according to the shape of metallic pattern, developing forms etching resist 30a.Secondly, shown in Fig. 9 (10), use is carried out etching corresponding to the etching solution of the material of conductor layer 29 and metal forming 27, forms metallic pattern 27b.Then, shown in Fig. 9 (11), remove etching resist 30a.These operations are carried out equally with (3b) operation.
The conduction connecting structure of the present invention that can obtain as mentioned above, shown in Fig. 9 (11), comprise: be used to conduct electricity the interlayer that connects usefulness at interlayer and connect projection 24, the at least a portion that makes this interlayer connect the upper surface 24a of projection 24 is exposed, is configured in interlayer and connects projection 24 insulating barrier 26 on every side, be layered on this insulating barrier 26 with aforementioned layers between be connected projection 24 upper surface 24a repeat, the metallic pattern 27b of opening, the conductor layer 29 that the upper surface 24a that connects projection 24 from interlayer forms up to the inner peripheral surface of the opening 27a of aforementioned metal figure 27b at least.
(another form of implementation of the 3rd invention)
Below, another form of implementation of the present invention is described.
(1) in aforementioned form of implementation, enumerated with the example that connects projection between the method cambium layer of putting down in writing in the WO00/52977 communique, but the same with first invention, also can form with other method.
(2) in aforementioned form of implementation, enumerated the example that forms the method for conduction connecting structure of the present invention with respect to the wiring layer of mutual interlayer connection projection, but also can be for not forming the layer that connects projection on wiring figure or the metal level before formation between cambium layer, the same with aforementioned form of implementation, form conduction connecting structure of the present invention.
In this case, can will not have wiring figure metal level and form the metal forming of caking property insulating barrier, the upper surface that connects projection with interlayer is positioned at the mode of the near surface of aforementioned metal paper tinsel, stacked integrated, the operation of its back is identical.But the structure of Huo Deing can be used as two sides metal foil layer lamination and uses like this, and also above-mentioned metal level of etching and metal forming simultaneously form figure.In addition, can metal level not formed figure yet, use as ground plane or bus plane.
(3) in aforementioned form of implementation, enumerated to comprising interlayer and connected roughly whole the plating of the upper surface of projection in interior metal forming, form the conductor layer example, but the upper surface that also can connect projection from the interlayer that exposes face until opening interior forms conductor layer by plating.
In this case, after setting has the plating resist of peristome consistent with opening or the slightly little repetition than it, form conductor layer.At this moment, preferably optionally carry out plating, when carrying out the electrolysis plating, can before the plating resist is set, become the electroless plating of the substrate of conductivity in the inboard of peristome.In addition, utilizing electroless plating apply to form under the situation of conductor layer, can make in the inboard of peristome optionally adsoption catalyst.
(4) in aforementioned form of implementation, enumerated by carrying out plating and formed the example of conductor layer, but also can be by the filling of conducting resinl, the sputter evaporation, vacuum evaporation waits to be carried out.In addition, also can form conductor layer by they and electrolysis plating are made up.
Under the situation of filled conductive glue, via the opening of metal forming, portion is by silk screen printing within it, and extrusion etc. are filled, and as conducting resinl, can use any gluing that is used for circuit board.In addition, the filling of conducting resinl preferably makes the surperficial roughly the same height with metal forming, thus, can make the metallic pattern leveling, easily interlayer connect projection directly over form the upper strata interlayer connect projection.
For sputter evaporation or vacuum evaporation,, can use any known film formation method in the prior art as long as can form conductive membrane.In addition, also can carry out sputter evaporation and vacuum evaporation before the plating resist that above-mentioned (3) are set, the substrate conductive layer when utilizing the electrolysis plating to form conductor layer.
The industrial possibility of utilizing
According to the present invention, provide a kind of and can make the thickness of insulating layer homogenising that is mixed in interlayer, even In insulating barrier, comprise in the situation that strengthens fiber, also can make surfacing or carry out insulating layer thickness The formation method of interlayer syndeton of the control of degree, and the interlayer syndeton that forms with the method And multi-layer wire substrate. Thereby the present invention utilizes possibility very high in industrial.
Claims (7)
1, a kind of formation method of interlayer syndeton is formed at wiring layer on the two sides of insulating barrier or metal level and connects projection via interlayer and connect at interlayer, comprising:
(1a) is connected between the stacked body of projection with forming between aforementioned layers at stamping surface, configuration allows the sheet material of concavity distortion, the operation of insulating barrier formation material that metal level forms material and heat adhesiveness at least successively,
(1b) under this configuration status, utilize stamping surface to add drop stamping, obtain the operation that on the position that connects projection corresponding to interlayer, has protuberance, form the duplexer of metal level from the teeth outwards,
(1c) remove the protuberance of this duplexer, make interlayer connect the operation that projection is exposed, and
The interlayer that (1d) will expose connect projection with across insulating barrier and close metal level conducts electricity the operation that is connected.
2, the formation method of interlayer syndeton as claimed in claim 1 as aforementioned sheet material, adopts the sheet rubber that has buffering paper, the metal forming of release property or have release property.
3, a kind of formation method of interlayer syndeton is formed at wiring layer on two faces of insulating barrier or metal level and connects projection via interlayer and connect at interlayer, comprising:
(2a) with aforementioned layers between be connected on the stamping surface of the opposed position of projection, form recess, perhaps configuration is used to form the operation of the plate of this recess,
(2b) is connected between the stacked body of projection with forming between aforementioned layers, disposes the operation that metal level forms the insulating barrier formation material of material and heat adhesiveness successively at least at stamping surface,
(2c) be configured under the state, utilize stamping surface to add drop stamping, obtain on the position that connects projection corresponding to interlayer, to form operation with duplexer of formation metal level on protuberance, the surface this,
(2d) remove the protuberance of aforementioned duplexer, make interlayer connect the operation that projection is exposed, and
The interlayer that (2e) will expose connect projection with across insulating barrier and close metal level conducts electricity the operation that is connected.
4, a kind of formation method of interlayer syndeton, the wiring layer or the metal level that are formed on the insulating barrier two sides connect at interlayer via interlayer connection projection, comprising:
(3a) will form the stacked body that connects projection between aforementioned layers, the insulating barrier formation material and the metal level formation material of heat adhesiveness, be positioned at the stacked incorporate operation of mode that the aforementioned metal layer forms the near surface of material so that connect the upper surface of projection between aforementioned layers
(3b) the aforementioned metal layer is formed in the material, is connected the operation that part that the upper surface of projection repeats is carried out etching formation opening at least with between aforementioned layers,
(3c) remove at least a portion of the insulating barrier that exposes from this opening, the operation that the upper surface that connects projection between aforementioned layers is exposed, and
(3d),, form the operation of conductor layer at least up to the inner peripheral surface of aforementioned opening from connecting the upper surface of projection between the aforementioned layers of exposing.
5, a kind of interlayer syndeton, being formed at wiring layer on the two sides of insulating barrier or metal level connects projection via interlayer and connects at interlayer, it is characterized in that, by across insulating barrier and approaching aforementioned wiring layer or metal level and conductor layer, the upper surface that this interlayer is connected projection connects from the part that insulating barrier exposes.
6, interlayer syndeton as claimed in claim 5, aforementioned conductor layer forms by plating.
7, a kind of multi-layer wire substrate is equipped with claim 5 or 6 described interlayer syndetons at any one interlayer.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002146451 | 2002-05-21 | ||
| JP146451/2002 | 2002-05-21 |
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| CN1565150A true CN1565150A (en) | 2005-01-12 |
| CN100334929C CN100334929C (en) | 2007-08-29 |
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| CNB028194772A Expired - Lifetime CN100334929C (en) | 2002-05-21 | 2002-12-13 | Interlayer connection structure and its building method |
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| JP (1) | JP3907062B2 (en) |
| KR (1) | KR100536933B1 (en) |
| CN (1) | CN100334929C (en) |
| AU (1) | AU2002367949A1 (en) |
| WO (1) | WO2003098984A1 (en) |
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| CN102548250A (en) * | 2010-12-30 | 2012-07-04 | 旭德科技股份有限公司 | Circuit board and manufacturing method thereof |
| CN101593736B (en) * | 2008-05-28 | 2013-06-05 | 瑞萨电子株式会社 | Semiconductor device and manufacturing method therefor |
| CN106034378A (en) * | 2015-03-11 | 2016-10-19 | 深圳市英内尔科技有限公司 | Reel-to-reel flexible circuit board made of novel material and manufacturing method thereof |
| WO2017012233A1 (en) * | 2015-07-20 | 2017-01-26 | 惠州绿草电子科技有限公司 | Method for manufacturing stacked circuit board, and stacked circuit board |
| CN109073680A (en) * | 2016-05-06 | 2018-12-21 | 日本麦可罗尼克斯股份有限公司 | Multi-layer wire substrate and the probe card for using the multi-layer wire substrate |
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Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006060047A (en) * | 2004-08-20 | 2006-03-02 | North:Kk | Wiring board and its manufacturing method |
| JP2006278688A (en) * | 2005-03-29 | 2006-10-12 | Sumitomo Bakelite Co Ltd | Cushioning material, and method for manufacturing wiring plate |
| JP4735017B2 (en) * | 2005-04-19 | 2011-07-27 | 株式会社村田製作所 | Manufacturing method of multilayer ceramic substrate |
| JP5194505B2 (en) * | 2007-03-23 | 2013-05-08 | パナソニック株式会社 | Printed wiring board with cavity and manufacturing method thereof |
| KR100861620B1 (en) * | 2007-05-15 | 2008-10-07 | 삼성전기주식회사 | Fabricating method of printed circuit board |
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| JP5927946B2 (en) * | 2011-02-14 | 2016-06-01 | 株式会社村田製作所 | Manufacturing method of multilayer wiring board |
| US9095085B2 (en) * | 2013-03-29 | 2015-07-28 | Kinsus Interconnect Technology Corp. | Method of manufacturing a stacked multilayer structure |
| JP6788268B2 (en) * | 2016-02-22 | 2020-11-25 | 株式会社ダイワ工業 | Manufacturing method of wiring board or wiring board material |
Family Cites Families (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3786600T2 (en) * | 1986-05-30 | 1993-11-04 | Furukawa Electric Co Ltd | MULTILAYER PRINTED CIRCUIT AND METHOD FOR THEIR PRODUCTION. |
| JP2881270B2 (en) * | 1990-08-28 | 1999-04-12 | 日本特殊陶業株式会社 | Method for manufacturing multilayer wiring board |
| US5600103A (en) * | 1993-04-16 | 1997-02-04 | Kabushiki Kaisha Toshiba | Circuit devices and fabrication method of the same |
| US5744285A (en) * | 1996-07-18 | 1998-04-28 | E. I. Du Pont De Nemours And Company | Composition and process for filling vias |
| JP3347980B2 (en) * | 1997-07-25 | 2002-11-20 | 山一電機株式会社 | Circuit board and method of manufacturing the same |
| US6120693A (en) * | 1998-11-06 | 2000-09-19 | Alliedsignal Inc. | Method of manufacturing an interlayer via and a laminate precursor useful for same |
| JP3137186B2 (en) * | 1999-02-05 | 2001-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | Interlayer connection structure, multilayer wiring board, and method for forming them |
| IL145153A (en) * | 1999-03-23 | 2005-05-17 | Circuit Foil Luxembourg Trading Sarl | Method for manufacturing a multilayer printed circuit board and composite foil for use therein |
| JP2002084068A (en) * | 2000-09-06 | 2002-03-22 | Toshiba Corp | Printed wiring board, manufacturing method thereof, and prepreg |
| JP3769587B2 (en) * | 2000-11-01 | 2006-04-26 | 株式会社ノース | Wiring circuit member, manufacturing method thereof, multilayer wiring circuit board, and semiconductor integrated circuit device |
-
2002
- 2002-12-13 KR KR10-2004-7002072A patent/KR100536933B1/en active IP Right Grant
- 2002-12-13 CN CNB028194772A patent/CN100334929C/en not_active Expired - Lifetime
- 2002-12-13 JP JP2004506328A patent/JP3907062B2/en not_active Expired - Lifetime
- 2002-12-13 WO PCT/JP2002/013049 patent/WO2003098984A1/en active Application Filing
- 2002-12-13 AU AU2002367949A patent/AU2002367949A1/en not_active Abandoned
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| CN101593736B (en) * | 2008-05-28 | 2013-06-05 | 瑞萨电子株式会社 | Semiconductor device and manufacturing method therefor |
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| WO2017012233A1 (en) * | 2015-07-20 | 2017-01-26 | 惠州绿草电子科技有限公司 | Method for manufacturing stacked circuit board, and stacked circuit board |
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Also Published As
| Publication number | Publication date |
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| KR20040030958A (en) | 2004-04-09 |
| AU2002367949A1 (en) | 2003-12-02 |
| WO2003098984A1 (en) | 2003-11-27 |
| JP3907062B2 (en) | 2007-04-18 |
| JPWO2003098984A1 (en) | 2005-09-22 |
| KR100536933B1 (en) | 2005-12-14 |
| CN100334929C (en) | 2007-08-29 |
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