CN1666316A - 对半导体处理参数进行非侵入式测量和分析的方法和装置 - Google Patents

对半导体处理参数进行非侵入式测量和分析的方法和装置 Download PDF

Info

Publication number
CN1666316A
CN1666316A CN038155621A CN03815562A CN1666316A CN 1666316 A CN1666316 A CN 1666316A CN 038155621 A CN038155621 A CN 038155621A CN 03815562 A CN03815562 A CN 03815562A CN 1666316 A CN1666316 A CN 1666316A
Authority
CN
China
Prior art keywords
energy
plasma
antenna
shell
processor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN038155621A
Other languages
English (en)
Chinese (zh)
Inventor
理查德·帕森斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of CN1666316A publication Critical patent/CN1666316A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN038155621A 2002-07-03 2003-06-18 对半导体处理参数进行非侵入式测量和分析的方法和装置 Pending CN1666316A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39310102P 2002-07-03 2002-07-03
US60/393,101 2002-07-03

Publications (1)

Publication Number Publication Date
CN1666316A true CN1666316A (zh) 2005-09-07

Family

ID=30115543

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038155621A Pending CN1666316A (zh) 2002-07-03 2003-06-18 对半导体处理参数进行非侵入式测量和分析的方法和装置

Country Status (6)

Country Link
US (1) US20050183821A1 (fr)
JP (1) JP2005531931A (fr)
CN (1) CN1666316A (fr)
AU (1) AU2003263746A1 (fr)
TW (1) TWI246137B (fr)
WO (1) WO2004006298A2 (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102565785A (zh) * 2010-11-22 2012-07-11 通用电气公司 传感器组件和调整传感器的操作的方法
CN110520960A (zh) * 2017-03-31 2019-11-29 都柏林城市大学 用于远程感测等离子体的系统和方法

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ITMI20061121A1 (it) * 2006-06-09 2007-12-10 Andrew Telecomm Products S R L Sistema e metodo di controllo non invasivo della tenuta di apparati stagni
US7728602B2 (en) * 2007-02-16 2010-06-01 Mks Instruments, Inc. Harmonic derived arc detector
DE102009011960B4 (de) * 2009-03-10 2013-06-13 Schott Ag Verfahren zur Überwachung von Plasma-Entladungen
US10718606B2 (en) 2015-04-17 2020-07-21 Nikon Corporation Determination of customized components for fitting wafer profile
GB202005828D0 (en) 2020-04-21 2020-06-03 Univ Dublin City Electromagnetic field signal acquisition system for high signal-t-noise ratios, and electrical noise immunity
EP4020520A1 (fr) 2020-12-22 2022-06-29 Impedans Ltd Appareil de détection de signaux rf à partir d'équipement de traitement au plasma rf
WO2023139066A1 (fr) * 2022-01-18 2023-07-27 Ucl Business Ltd Procédé de surveillance de décharge de plasma
EP4250335A1 (fr) 2022-03-25 2023-09-27 Impedans Ltd Appareil de détection non invasive de spectre de courant de fréquence radio circulant dans une chambre de traitement au plasma

Family Cites Families (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4207137A (en) * 1979-04-13 1980-06-10 Bell Telephone Laboratories, Incorporated Method of controlling a plasma etching process by monitoring the impedance changes of the RF power
US4846920A (en) * 1987-12-09 1989-07-11 International Business Machine Corporation Plasma amplified photoelectron process endpoint detection apparatus
DE3821208C1 (fr) * 1988-06-23 1989-11-02 Leybold Ag, 6450 Hanau, De
JP2766685B2 (ja) * 1988-09-26 1998-06-18 アンリツ株式会社 スペクトラムアナライザ
US5175880A (en) * 1988-11-03 1992-12-29 Rolls-Royce Plc Signal analysis
US4982150A (en) * 1989-10-30 1991-01-01 General Electric Company Spectral estimation utilizing an autocorrelation-based minimum free energy method
KR910016054A (ko) * 1990-02-23 1991-09-30 미다 가쓰시게 마이크로 전자 장치용 표면 처리 장치 및 그 방법
US5103182A (en) * 1990-04-02 1992-04-07 Texas Instruments Incorporated Electromagnetic wave measurement of conductive layers of a semiconductor wafer during processing in a fabrication chamber
US5168279A (en) * 1991-06-12 1992-12-01 Hewlett-Packard Company Antenna for sensing stray rf radiation
JP3122175B2 (ja) * 1991-08-05 2001-01-09 忠弘 大見 プラズマ処理装置
US5184398A (en) * 1991-08-30 1993-02-09 Texas Instruments Incorporated In-situ real-time sheet resistance measurement method
US5523955A (en) * 1992-03-19 1996-06-04 Advanced Energy Industries, Inc. System for characterizing AC properties of a processing plasma
US5458732A (en) * 1992-04-14 1995-10-17 Texas Instruments Incorporated Method and system for identifying process conditions
US5273610A (en) * 1992-06-23 1993-12-28 Association Institutions For Material Sciences, Inc. Apparatus and method for determining power in plasma processing
US5325019A (en) * 1992-08-21 1994-06-28 Sematech, Inc. Control of plasma process by use of harmonic frequency components of voltage and current
US5407524A (en) * 1993-08-13 1995-04-18 Lsi Logic Corporation End-point detection in plasma etching by monitoring radio frequency matching network
US5479340A (en) * 1993-09-20 1995-12-26 Sematech, Inc. Real time control of plasma etch utilizing multivariate statistical analysis
US5467013A (en) * 1993-12-07 1995-11-14 Sematech, Inc. Radio frequency monitor for semiconductor process control
US5442562A (en) * 1993-12-10 1995-08-15 Eastman Kodak Company Method of controlling a manufacturing process using multivariate analysis
US5556549A (en) * 1994-05-02 1996-09-17 Lsi Logic Corporation Power control and delivery in plasma processing equipment
JPH07326490A (ja) * 1994-05-31 1995-12-12 Sony Corp 放電検出機
US5474648A (en) * 1994-07-29 1995-12-12 Lsi Logic Corporation Uniform and repeatable plasma processing
US5576629A (en) * 1994-10-24 1996-11-19 Fourth State Technology, Inc. Plasma monitoring and control method and system
US5519399A (en) * 1994-12-05 1996-05-21 Alliedsignal Inc. Method for measuring the frequency of continuous wave and wide pulse RF signals
US5688357A (en) * 1995-02-15 1997-11-18 Applied Materials, Inc. Automatic frequency tuning of an RF power source of an inductively coupled plasma reactor
US5667701A (en) * 1995-06-07 1997-09-16 Applied Materials, Inc. Method of measuring the amount of capacitive coupling of RF power in an inductively coupled plasma
US5691642A (en) * 1995-07-28 1997-11-25 Trielectrix Method and apparatus for characterizing a plasma using broadband microwave spectroscopic measurements
JP3766991B2 (ja) * 1995-10-20 2006-04-19 株式会社日立製作所 プラズマ処理の終点検出方法及び装置、並びに本検出方法及び装置を用いた半導体製造方法及び装置
US6252354B1 (en) * 1996-11-04 2001-06-26 Applied Materials, Inc. RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control
JPH09266098A (ja) * 1996-03-29 1997-10-07 Seiko Epson Corp プラズマ状態検出装置及びその方法並びにエッチング終点検出装置及びその方法
US6051284A (en) * 1996-05-08 2000-04-18 Applied Materials, Inc. Chamber monitoring and adjustment by plasma RF metrology
US5770922A (en) * 1996-07-22 1998-06-23 Eni Technologies, Inc. Baseband V-I probe
US6178822B1 (en) * 1996-11-19 2001-01-30 Christopher J. Manning Method and device for multiplexed spectro-rheological measurements
US5862060A (en) * 1996-11-22 1999-01-19 Uop Llc Maintenance of process control by statistical analysis of product optical spectrum
TW396454B (en) * 1997-06-24 2000-07-01 Matsushita Electrics Corporati Semiconductor device and method for fabricating the same
US6027601A (en) * 1997-07-01 2000-02-22 Applied Materials, Inc Automatic frequency tuning of an RF plasma source of an inductively coupled plasma reactor
CN1186476C (zh) * 1997-09-17 2005-01-26 东京电子株式会社 检测并防止射频等离子体系统中电弧放电的装置和方法
US6129807A (en) * 1997-10-06 2000-10-10 Applied Materials, Inc. Apparatus for monitoring processing of a substrate
US6153115A (en) * 1997-10-23 2000-11-28 Massachusetts Institute Of Technology Monitor of plasma processes with multivariate statistical analysis of plasma emission spectra
WO2000068985A1 (fr) * 1999-05-06 2000-11-16 Tokyo Electron Limited Appareil de traitement au plasma
US6419846B1 (en) * 1999-09-08 2002-07-16 Advanced Micro Devices, Inc. Determining endpoint in etching processes using principal components analysis of optical emission spectra
US6657214B1 (en) * 2000-06-16 2003-12-02 Emc Test Systems, L.P. Shielded enclosure for testing wireless communication devices
US6963728B2 (en) * 2002-05-15 2005-11-08 Visteon Global Technologies, Inc. Low power, high speed data communications in vehicles

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102565785A (zh) * 2010-11-22 2012-07-11 通用电气公司 传感器组件和调整传感器的操作的方法
CN110520960A (zh) * 2017-03-31 2019-11-29 都柏林城市大学 用于远程感测等离子体的系统和方法

Also Published As

Publication number Publication date
TW200406860A (en) 2004-05-01
TWI246137B (en) 2005-12-21
AU2003263746A1 (en) 2004-01-23
WO2004006298A3 (fr) 2004-05-13
US20050183821A1 (en) 2005-08-25
AU2003263746A8 (en) 2004-01-23
JP2005531931A (ja) 2005-10-20
WO2004006298A2 (fr) 2004-01-15

Similar Documents

Publication Publication Date Title
KR100912748B1 (ko) 부분최소제곱을 사용한 종단점검출을 위한 방법 및 장치
JP6224085B2 (ja) 改良された質量分析データを取得するための方法および装置
KR100499229B1 (ko) 플라즈마를 사용하여 반도체웨이퍼를 처리하는플라즈마처리장치
CN1666316A (zh) 对半导体处理参数进行非侵入式测量和分析的方法和装置
KR20170086674A (ko) 플라즈마 프로세싱 시스템을 제어하는 방법 및 장치
TW200405766A (en) Method and system for data handling, storage and manipulation
CN1666315A (zh) 等离子体参数非侵入测量和分析的方法和装置
US10775456B2 (en) NMR probe
EP4047633A1 (fr) Dispositif de mesure de la densité ionique d'un plasma et appareil de diagnostic du plasma selon ce dispositif
US20060021970A1 (en) Method and apparatus for non-invasive measurement and analysis of semiconductor process parameters
Gottardi et al. Sensitivity of the spherical gravitational wave detector MiniGRAIL operating at 5 K
JP3653667B2 (ja) 異常放電検出装置、異常放電検出方法、及び、プラズマ処理装置
Medendorp et al. Acoustic-resonance spectrometry as a process analytical technology for rapid and accurate tablet identification
US7441446B2 (en) Method and apparatus for determining surface characteristics by using SPM techniques with acoustic excitation and real-time digitizing
KR102200662B1 (ko) 비침습형 플라즈마 공정 진단 방법 및 장치
KR20050019823A (ko) 플라즈마 파라미터들의 비-침입성 측정 및 분석을 위한장치 및 방법
KR20050021377A (ko) 반도체 플라즈마 파라미터들의 비-침입성 측정 및 분석을위한 장치 및 방법
KR20050018816A (ko) 반도체 처리 파라미터들의 비-침입성 측정 및 분석을 위한장치 및 방법
Sobolewski et al. Electrical measurements for monitoring and control of rf plasma processing
JP6503195B2 (ja) 磁気共鳴測定装置
CN109917253B (zh) 变压器内局部放电源定位方法、装置和服务器
Rietman et al. A study on/spl Rfr//sup m//spl rarr//spl Rfr//sup 1/maps: application to a 0.16-/spl mu/m via etch process endpoint
CN209878890U (zh) 电磁干扰检测系统
CN114993150A (zh) 一种单路交流信号解算多处位置信息的测量系统及方法
Martinez et al. Broadband RF process-state sensor for fault detection and classification

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication