CN1665609A - 流体辅助低温清洗 - Google Patents

流体辅助低温清洗 Download PDF

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Publication number
CN1665609A
CN1665609A CN038103621A CN03810362A CN1665609A CN 1665609 A CN1665609 A CN 1665609A CN 038103621 A CN038103621 A CN 038103621A CN 03810362 A CN03810362 A CN 03810362A CN 1665609 A CN1665609 A CN 1665609A
Authority
CN
China
Prior art keywords
described method
fluid
steam
cleaning
low temperature
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN038103621A
Other languages
English (en)
Chinese (zh)
Inventor
S·巴那基
H·F·春
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Messer LLC
Original Assignee
BOC Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/324,221 external-priority patent/US6852173B2/en
Priority claimed from US10/403,147 external-priority patent/US6949145B2/en
Application filed by BOC Group Inc filed Critical BOC Group Inc
Publication of CN1665609A publication Critical patent/CN1665609A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
CN038103621A 2002-04-05 2003-04-03 流体辅助低温清洗 Pending CN1665609A (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US36985202P 2002-04-05 2002-04-05
US36985302P 2002-04-05 2002-04-05
US60/369,853 2002-04-05
US60/369,852 2002-04-05
US10/324,221 US6852173B2 (en) 2002-04-05 2002-12-19 Liquid-assisted cryogenic cleaning
US10,324,221 2002-12-19
US10/403,147 2003-03-31
US10/403,147 US6949145B2 (en) 2002-04-05 2003-03-31 Vapor-assisted cryogenic cleaning

Publications (1)

Publication Number Publication Date
CN1665609A true CN1665609A (zh) 2005-09-07

Family

ID=29255566

Family Applications (1)

Application Number Title Priority Date Filing Date
CN038103621A Pending CN1665609A (zh) 2002-04-05 2003-04-03 流体辅助低温清洗

Country Status (6)

Country Link
EP (1) EP1494821A4 (de)
JP (1) JP2005522056A (de)
KR (1) KR20040098054A (de)
CN (1) CN1665609A (de)
AU (1) AU2003233485A1 (de)
WO (1) WO2003086668A1 (de)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102476108A (zh) * 2010-11-23 2012-05-30 中国科学院微电子研究所 高温水蒸气和水混合射流清洗系统及方法
CN106269726A (zh) * 2016-09-13 2017-01-04 内蒙古蒙牛乳业（集团）股份有限公司 清洗蒸发光散射检测器漂移管的方法
CN106493121A (zh) * 2016-11-01 2017-03-15 武汉大学 一种基于活性液体和激光的纳米清洗方法
CN114042684A (zh) * 2022-01-12 2022-02-15 北京通美晶体技术股份有限公司 一种磷化铟晶片及其混合清洗工艺

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
US7264679B2 (en) 2004-02-11 2007-09-04 Applied Materials, Inc. Cleaning of chamber components
PT103951A (pt) * 2008-01-31 2009-07-31 Univ Nova De Lisboa Processamento de elementos eléctricos e/ou electrónicos em substratos de material celulósico
US9925639B2 (en) * 2014-07-18 2018-03-27 Applied Materials, Inc. Cleaning of chamber components with solid carbon dioxide particles
JP2016093870A (ja) * 2014-11-14 2016-05-26 株式会社東芝 処理装置
JP2016093871A (ja) * 2014-11-14 2016-05-26 株式会社東芝 処理装置およびノズル
DE102015003942A1 (de) * 2015-03-26 2016-09-29 Linde Aktiengesellschaft Entgraten von Formteilen, insbesondere Gummi-Formteile
TW202221789A (zh) * 2020-11-27 2022-06-01 南韓商Ｐｓｋ有限公司 處理基板之方法與設備

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631250A (en) * 1985-03-13 1986-12-23 Research Development Corporation Of Japan Process for removing covering film and apparatus therefor
US4695327A (en) * 1985-06-13 1987-09-22 Purusar Corporation Surface treatment to remove impurities in microrecesses
DE3612586A1 (de) * 1986-04-15 1987-10-29 Messer Griesheim Gmbh Verfahren zum entfernen von auf der oberflaeche von werkstuecken haftenden materialresten
JPH0349224A (ja) * 1989-07-17 1991-03-04 Mitsubishi Electric Corp 基板の処理方法
US5377705A (en) * 1993-09-16 1995-01-03 Autoclave Engineers, Inc. Precision cleaning system
US5417768A (en) * 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
US5931721A (en) * 1994-11-07 1999-08-03 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US6066032A (en) * 1997-05-02 2000-05-23 Eco Snow Systems, Inc. Wafer cleaning using a laser and carbon dioxide snow
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6332470B1 (en) * 1997-12-30 2001-12-25 Boris Fishkin Aerosol substrate cleaner

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102476108A (zh) * 2010-11-23 2012-05-30 中国科学院微电子研究所 高温水蒸气和水混合射流清洗系统及方法
CN106269726A (zh) * 2016-09-13 2017-01-04 内蒙古蒙牛乳业（集团）股份有限公司 清洗蒸发光散射检测器漂移管的方法
CN106493121A (zh) * 2016-11-01 2017-03-15 武汉大学 一种基于活性液体和激光的纳米清洗方法
CN114042684A (zh) * 2022-01-12 2022-02-15 北京通美晶体技术股份有限公司 一种磷化铟晶片及其混合清洗工艺
CN114042684B (zh) * 2022-01-12 2022-03-22 北京通美晶体技术股份有限公司 一种磷化铟晶片及其混合清洗工艺

Also Published As

Publication number Publication date
WO2003086668A1 (en) 2003-10-23
AU2003233485A1 (en) 2003-10-27
EP1494821A4 (de) 2009-11-25
EP1494821A1 (de) 2005-01-12
KR20040098054A (ko) 2004-11-18
JP2005522056A (ja) 2005-07-21

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