EP1494821A1 - Fluidunterstützte kryogene reinigung - Google Patents

Fluidunterstützte kryogene reinigung

Info

Publication number
EP1494821A1
EP1494821A1 EP03728337A EP03728337A EP1494821A1 EP 1494821 A1 EP1494821 A1 EP 1494821A1 EP 03728337 A EP03728337 A EP 03728337A EP 03728337 A EP03728337 A EP 03728337A EP 1494821 A1 EP1494821 A1 EP 1494821A1
Authority
EP
European Patent Office
Prior art keywords
cleaning
vapor
fluid
contaminants
cryogenic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP03728337A
Other languages
English (en)
French (fr)
Other versions
EP1494821A4 (de
Inventor
Souvik Banerjee
Harlan Forrest Chung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOC Inc
Original Assignee
BOC Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/324,221 external-priority patent/US6852173B2/en
Priority claimed from US10/403,147 external-priority patent/US6949145B2/en
Application filed by BOC Inc filed Critical BOC Inc
Publication of EP1494821A1 publication Critical patent/EP1494821A1/de
Publication of EP1494821A4 publication Critical patent/EP1494821A4/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02101—Cleaning only involving supercritical fluids
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04—Cleaning involving contact with liquid
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
    • B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
    • B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
    • B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Definitions

  • the International Technology Roadmap for Semiconductors indicates that the critical particle size is half of a DRAM 1/2 pitch [1].
  • the critical particle size is 65 nm. Therefore, particles larger than 65 nm size must be removed to ensure a defect-free device.
  • C c is the Cunningham slip correction factor given as in equation (2)
  • Cc 1 + 1.246( ⁇ /a) + 0.42( ⁇ /a)exp[-0.87(a/ ⁇ )] (2)
  • Equation 1 shows that the relaxation time decreases with particle size. Therefore, the smaller-sized particles will not be able to arrive at the wafer surface with sufficient velocity to effectively clean the inside walls of the submicron vias and trenches.
  • a reactive gas or reactive vapor of a liquid may be used to aid in the removal of contaminants.
  • the reactive gas or vapor is selected according to its reactivity with the contaminants on the substrate surface.
  • Reactive gases or vapors are generally used to remove organic photoresist and fluoropolymer etch residue inside features on the substrate surface.
  • the gas/vapor After reacting with the contaminants, the gas/vapor preferably produces byproducts in a gaseous form.
  • references to reactive gas may include reactive vapors of a liquid and references to reactive vapors may include reactive gases.
EP03728337A 2002-04-05 2003-04-03 Fluidunterstützte kryogene reinigung Withdrawn EP1494821A4 (de)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US403147 1982-07-29
US36985202P 2002-04-05 2002-04-05
US36985302P 2002-04-05 2002-04-05
US369853P 2002-04-05
US369852P 2002-04-05
US324221 2002-12-19
US10/324,221 US6852173B2 (en) 2002-04-05 2002-12-19 Liquid-assisted cryogenic cleaning
US10/403,147 US6949145B2 (en) 2002-04-05 2003-03-31 Vapor-assisted cryogenic cleaning
PCT/US2003/010354 WO2003086668A1 (en) 2002-04-05 2003-04-03 Fluid assisted cryogenic cleaning

Publications (2)

Publication Number Publication Date
EP1494821A1 true EP1494821A1 (de) 2005-01-12
EP1494821A4 EP1494821A4 (de) 2009-11-25

Family

ID=29255566

Family Applications (1)

Application Number Title Priority Date Filing Date
EP03728337A Withdrawn EP1494821A4 (de) 2002-04-05 2003-04-03 Fluidunterstützte kryogene reinigung

Country Status (6)

Country Link
EP (1) EP1494821A4 (de)
JP (1) JP2005522056A (de)
KR (1) KR20040098054A (de)
CN (1) CN1665609A (de)
AU (1) AU2003233485A1 (de)
WO (1) WO2003086668A1 (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040029494A1 (en) * 2002-08-09 2004-02-12 Souvik Banerjee Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
US7264679B2 (en) 2004-02-11 2007-09-04 Applied Materials, Inc. Cleaning of chamber components
PT103951A (pt) * 2008-01-31 2009-07-31 Univ Nova De Lisboa Processamento de elementos eléctricos e/ou electrónicos em substratos de material celulósico
CN102476108A (zh) * 2010-11-23 2012-05-30 中国科学院微电子研究所 高温水蒸气和水混合射流清洗系统及方法
US9925639B2 (en) * 2014-07-18 2018-03-27 Applied Materials, Inc. Cleaning of chamber components with solid carbon dioxide particles
JP2016093871A (ja) * 2014-11-14 2016-05-26 株式会社東芝 処理装置およびノズル
JP2016093870A (ja) * 2014-11-14 2016-05-26 株式会社東芝 処理装置
DE102015003942A1 (de) * 2015-03-26 2016-09-29 Linde Aktiengesellschaft Entgraten von Formteilen, insbesondere Gummi-Formteile
CN106269726B (zh) * 2016-09-13 2018-09-04 内蒙古蒙牛乳业（集团）股份有限公司 清洗蒸发光散射检测器漂移管的方法
CN106493121B (zh) * 2016-11-01 2017-10-03 武汉大学 一种基于活性液体和激光的纳米清洗方法
TW202221789A (zh) * 2020-11-27 2022-06-01 南韓商Ｐｓｋ有限公司 處理基板之方法與設備
CN114042684B (zh) * 2022-01-12 2022-03-22 北京通美晶体技术股份有限公司 一种磷化铟晶片及其混合清洗工艺

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631250A (en) * 1985-03-13 1986-12-23 Research Development Corporation Of Japan Process for removing covering film and apparatus therefor
US4695327A (en) * 1985-06-13 1987-09-22 Purusar Corporation Surface treatment to remove impurities in microrecesses
EP0241749A1 (de) * 1986-04-15 1987-10-21 Messer Griesheim Gmbh Verfahren zum Entfernen von auf der Oberfläche von Werkstücken haftenden Materialresten
US5081068A (en) * 1989-07-17 1992-01-14 Mitsubishi Denki Kabushiki Kaisha Method of treating surface of substrate with ice particles and hydrogen peroxide
US5377705A (en) * 1993-09-16 1995-01-03 Autoclave Engineers, Inc. Precision cleaning system
US5417768A (en) * 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US5931721A (en) * 1994-11-07 1999-08-03 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6332470B1 (en) * 1997-12-30 2001-12-25 Boris Fishkin Aerosol substrate cleaner

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6066032A (en) * 1997-05-02 2000-05-23 Eco Snow Systems, Inc. Wafer cleaning using a laser and carbon dioxide snow

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4631250A (en) * 1985-03-13 1986-12-23 Research Development Corporation Of Japan Process for removing covering film and apparatus therefor
US4695327A (en) * 1985-06-13 1987-09-22 Purusar Corporation Surface treatment to remove impurities in microrecesses
EP0241749A1 (de) * 1986-04-15 1987-10-21 Messer Griesheim Gmbh Verfahren zum Entfernen von auf der Oberfläche von Werkstücken haftenden Materialresten
US5081068A (en) * 1989-07-17 1992-01-14 Mitsubishi Denki Kabushiki Kaisha Method of treating surface of substrate with ice particles and hydrogen peroxide
US5377705A (en) * 1993-09-16 1995-01-03 Autoclave Engineers, Inc. Precision cleaning system
US5417768A (en) * 1993-12-14 1995-05-23 Autoclave Engineers, Inc. Method of cleaning workpiece with solvent and then with liquid carbon dioxide
US5931721A (en) * 1994-11-07 1999-08-03 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
US6203406B1 (en) * 1994-11-07 2001-03-20 Sumitomo Heavy Industries, Ltd. Aerosol surface processing
US5908510A (en) * 1996-10-16 1999-06-01 International Business Machines Corporation Residue removal by supercritical fluids
US6306564B1 (en) * 1997-05-27 2001-10-23 Tokyo Electron Limited Removal of resist or residue from semiconductors using supercritical carbon dioxide
US6332470B1 (en) * 1997-12-30 2001-12-25 Boris Fishkin Aerosol substrate cleaner

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of WO03086668A1 *

Also Published As

Publication number Publication date
CN1665609A (zh) 2005-09-07
EP1494821A4 (de) 2009-11-25
WO2003086668A1 (en) 2003-10-23
KR20040098054A (ko) 2004-11-18
JP2005522056A (ja) 2005-07-21
AU2003233485A1 (en) 2003-10-27

Similar Documents

Publication Publication Date Title
US6949145B2 (en) Vapor-assisted cryogenic cleaning
US6852173B2 (en) Liquid-assisted cryogenic cleaning
US8197603B2 (en) Method and apparatus for treating a substrate with dense fluid and plasma
US4806171A (en) Apparatus and method for removing minute particles from a substrate
US6080529A (en) Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
EP0461476B1 (de) Reinigung einer Oberfläche mittels eines kryogenen Aerosols
TWI383436B (zh) 將保護性塗料濺鍍於半導體基材上之方法
WO2019043448A1 (en) CHEMICAL COMPOSITIONS FOR THE ETCHING OF STACKED MULTIPLE LAYERS
US10748789B2 (en) Systems and methods for treating substrates with cryogenic fluid mixtures
WO2003086668A1 (en) Fluid assisted cryogenic cleaning
KR20160041023A (ko) 극저온 유체 혼합물로 기판을 처리하는 시스템 및 방법
US20040029494A1 (en) Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques
JP2001137797A (ja) クラスタを利用した乾式洗浄装置及びその方法
US20050217706A1 (en) Fluid assisted cryogenic cleaning
US20060105683A1 (en) Nozzle design for generating fluid streams useful in the manufacture of microelectronic devices
WO2000024048A1 (en) Method of etching patterned layers useful as masking during subsequent etching or for damascene structures
TWI278927B (en) Fluid assisted cryogenic cleaning
US20100167552A1 (en) Methods for particle removal during integrated circuit device fabrication
Banerjee Cryoaerosol cleaning of particles from surfaces
JPH04343430A (ja) 過フッ化炭化水素ポリマ膜を基板に接着する方法および基板
McDermott et al. Cleaning using argon/nitrogen cryogenic aerosols
JP3254678B2 (ja) 半導体装置の製造方法
Banerjee et al. Cryogenic aerosols and supercritical fluid cleaning
TW201801163A (zh) 以低溫流體混合物處理基板之系統及方法

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20041014

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LI LU MC NL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL LT LV MK

A4 Supplementary search report drawn up and despatched

Effective date: 20091028

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/02 20060101ALI20091022BHEP

Ipc: B08B 3/00 20060101AFI20031029BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20100127