EP1494821A1 - Fluidunterstützte kryogene reinigung - Google Patents
Fluidunterstützte kryogene reinigungInfo
- Publication number
- EP1494821A1 EP1494821A1 EP03728337A EP03728337A EP1494821A1 EP 1494821 A1 EP1494821 A1 EP 1494821A1 EP 03728337 A EP03728337 A EP 03728337A EP 03728337 A EP03728337 A EP 03728337A EP 1494821 A1 EP1494821 A1 EP 1494821A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- cleaning
- vapor
- fluid
- contaminants
- cryogenic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 97
- 239000012530 fluid Substances 0.000 title claims abstract description 18
- 239000007788 liquid Substances 0.000 claims abstract description 67
- 238000000034 method Methods 0.000 claims abstract description 63
- 230000008569 process Effects 0.000 claims abstract description 57
- 239000000356 contaminant Substances 0.000 claims abstract description 47
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 239000007789 gas Substances 0.000 claims abstract description 40
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 229910052751 metal Inorganic materials 0.000 claims abstract description 9
- 239000002184 metal Substances 0.000 claims abstract description 9
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 18
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 15
- 239000000203 mixture Substances 0.000 claims description 11
- AKEJUJNQAAGONA-UHFFFAOYSA-N sulfur trioxide Chemical compound O=S(=O)=O AKEJUJNQAAGONA-UHFFFAOYSA-N 0.000 claims description 10
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 8
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 8
- TZIHFWKZFHZASV-UHFFFAOYSA-N methyl formate Chemical compound COC=O TZIHFWKZFHZASV-UHFFFAOYSA-N 0.000 claims description 8
- 239000006227 byproduct Substances 0.000 claims description 7
- 229910052757 nitrogen Inorganic materials 0.000 claims description 7
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 claims description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- RWRDLPDLKQPQOW-UHFFFAOYSA-N Pyrrolidine Chemical compound C1CCNC1 RWRDLPDLKQPQOW-UHFFFAOYSA-N 0.000 claims description 6
- XTLNYNMNUCLWEZ-UHFFFAOYSA-N ethanol;propan-2-one Chemical compound CCO.CC(C)=O XTLNYNMNUCLWEZ-UHFFFAOYSA-N 0.000 claims description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N nitrogen oxide Inorganic materials O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 claims description 6
- 238000007710 freezing Methods 0.000 claims description 5
- 230000008014 freezing Effects 0.000 claims description 5
- 230000000977 initiatory effect Effects 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims description 4
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 4
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- RDHPKYGYEGBMSE-UHFFFAOYSA-N bromoethane Chemical compound CCBr RDHPKYGYEGBMSE-UHFFFAOYSA-N 0.000 claims description 4
- 239000011737 fluorine Substances 0.000 claims description 4
- 229910052731 fluorine Inorganic materials 0.000 claims description 4
- 239000003999 initiator Substances 0.000 claims description 4
- INQOMBQAUSQDDS-UHFFFAOYSA-N iodomethane Chemical compound IC INQOMBQAUSQDDS-UHFFFAOYSA-N 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 150000003254 radicals Chemical class 0.000 claims description 4
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 claims description 3
- HRYZWHHZPQKTII-UHFFFAOYSA-N chloroethane Chemical compound CCCl HRYZWHHZPQKTII-UHFFFAOYSA-N 0.000 claims description 2
- 229960003750 ethyl chloride Drugs 0.000 claims description 2
- 239000001307 helium Substances 0.000 claims description 2
- 229910052734 helium Inorganic materials 0.000 claims description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 229910052754 neon Inorganic materials 0.000 claims description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 claims description 2
- 238000010926 purge Methods 0.000 claims description 2
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 claims description 2
- 150000002739 metals Chemical class 0.000 abstract description 3
- 239000002245 particle Substances 0.000 description 57
- 235000012431 wafers Nutrition 0.000 description 43
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 39
- 229910002092 carbon dioxide Inorganic materials 0.000 description 35
- 239000010408 film Substances 0.000 description 18
- 239000000463 material Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- 238000005507 spraying Methods 0.000 description 7
- 238000005411 Van der Waals force Methods 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 6
- 239000000443 aerosol Substances 0.000 description 5
- 238000009833 condensation Methods 0.000 description 5
- 230000005494 condensation Effects 0.000 description 5
- 239000001569 carbon dioxide Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 230000009977 dual effect Effects 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000013626 chemical specie Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 229920002313 fluoropolymer Polymers 0.000 description 2
- 239000004811 fluoropolymer Substances 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 230000009257 reactivity Effects 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000005591 charge neutralization Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010849 ion bombardment Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910052699 polonium Inorganic materials 0.000 description 1
- HZEBHPIOVYHPMT-UHFFFAOYSA-N polonium atom Chemical compound [Po] HZEBHPIOVYHPMT-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000007614 solvation Methods 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02101—Cleaning only involving supercritical fluids
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0064—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes
- B08B7/0092—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by temperature changes by cooling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24C—ABRASIVE OR RELATED BLASTING WITH PARTICULATE MATERIAL
- B24C1/00—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods
- B24C1/003—Methods for use of abrasive blasting for producing particular effects; Use of auxiliary equipment in connection with such methods using material which dissolves or changes phase after the treatment, e.g. ice, CO2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
- C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Definitions
- the International Technology Roadmap for Semiconductors indicates that the critical particle size is half of a DRAM 1/2 pitch [1].
- the critical particle size is 65 nm. Therefore, particles larger than 65 nm size must be removed to ensure a defect-free device.
- C c is the Cunningham slip correction factor given as in equation (2)
- Cc 1 + 1.246( ⁇ /a) + 0.42( ⁇ /a)exp[-0.87(a/ ⁇ )] (2)
- Equation 1 shows that the relaxation time decreases with particle size. Therefore, the smaller-sized particles will not be able to arrive at the wafer surface with sufficient velocity to effectively clean the inside walls of the submicron vias and trenches.
- a reactive gas or reactive vapor of a liquid may be used to aid in the removal of contaminants.
- the reactive gas or vapor is selected according to its reactivity with the contaminants on the substrate surface.
- Reactive gases or vapors are generally used to remove organic photoresist and fluoropolymer etch residue inside features on the substrate surface.
- the gas/vapor After reacting with the contaminants, the gas/vapor preferably produces byproducts in a gaseous form.
- references to reactive gas may include reactive vapors of a liquid and references to reactive vapors may include reactive gases.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
Applications Claiming Priority (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36985302P | 2002-04-05 | 2002-04-05 | |
US36985202P | 2002-04-05 | 2002-04-05 | |
US369853P | 2002-04-05 | ||
US369852P | 2002-04-05 | ||
US10/324,221 US6852173B2 (en) | 2002-04-05 | 2002-12-19 | Liquid-assisted cryogenic cleaning |
US324221 | 2002-12-19 | ||
US10/403,147 US6949145B2 (en) | 2002-04-05 | 2003-03-31 | Vapor-assisted cryogenic cleaning |
US403147 | 2003-03-31 | ||
PCT/US2003/010354 WO2003086668A1 (en) | 2002-04-05 | 2003-04-03 | Fluid assisted cryogenic cleaning |
Publications (2)
Publication Number | Publication Date |
---|---|
EP1494821A1 true EP1494821A1 (de) | 2005-01-12 |
EP1494821A4 EP1494821A4 (de) | 2009-11-25 |
Family
ID=29255566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP03728337A Withdrawn EP1494821A4 (de) | 2002-04-05 | 2003-04-03 | Fluidunterstützte kryogene reinigung |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1494821A4 (de) |
JP (1) | JP2005522056A (de) |
KR (1) | KR20040098054A (de) |
CN (1) | CN1665609A (de) |
AU (1) | AU2003233485A1 (de) |
WO (1) | WO2003086668A1 (de) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040029494A1 (en) * | 2002-08-09 | 2004-02-12 | Souvik Banerjee | Post-CMP cleaning of semiconductor wafer surfaces using a combination of aqueous and CO2 based cryogenic cleaning techniques |
US7264679B2 (en) | 2004-02-11 | 2007-09-04 | Applied Materials, Inc. | Cleaning of chamber components |
PT103951A (pt) * | 2008-01-31 | 2009-07-31 | Univ Nova De Lisboa | Processamento de elementos eléctricos e/ou electrónicos em substratos de material celulósico |
CN102476108A (zh) * | 2010-11-23 | 2012-05-30 | 中国科学院微电子研究所 | 高温水蒸气和水混合射流清洗系统及方法 |
US9925639B2 (en) * | 2014-07-18 | 2018-03-27 | Applied Materials, Inc. | Cleaning of chamber components with solid carbon dioxide particles |
JP2016093871A (ja) * | 2014-11-14 | 2016-05-26 | 株式会社東芝 | 処理装置およびノズル |
JP2016093870A (ja) * | 2014-11-14 | 2016-05-26 | 株式会社東芝 | 処理装置 |
DE102015003942A1 (de) * | 2015-03-26 | 2016-09-29 | Linde Aktiengesellschaft | Entgraten von Formteilen, insbesondere Gummi-Formteile |
CN106269726B (zh) * | 2016-09-13 | 2018-09-04 | 内蒙古蒙牛乳业(集团)股份有限公司 | 清洗蒸发光散射检测器漂移管的方法 |
CN106493121B (zh) * | 2016-11-01 | 2017-10-03 | 武汉大学 | 一种基于活性液体和激光的纳米清洗方法 |
TW202221789A (zh) * | 2020-11-27 | 2022-06-01 | 南韓商Psk有限公司 | 處理基板之方法與設備 |
CN114042684B (zh) * | 2022-01-12 | 2022-03-22 | 北京通美晶体技术股份有限公司 | 一种磷化铟晶片及其混合清洗工艺 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4631250A (en) * | 1985-03-13 | 1986-12-23 | Research Development Corporation Of Japan | Process for removing covering film and apparatus therefor |
US4695327A (en) * | 1985-06-13 | 1987-09-22 | Purusar Corporation | Surface treatment to remove impurities in microrecesses |
EP0241749A1 (de) * | 1986-04-15 | 1987-10-21 | Messer Griesheim Gmbh | Verfahren zum Entfernen von auf der Oberfläche von Werkstücken haftenden Materialresten |
US5081068A (en) * | 1989-07-17 | 1992-01-14 | Mitsubishi Denki Kabushiki Kaisha | Method of treating surface of substrate with ice particles and hydrogen peroxide |
US5377705A (en) * | 1993-09-16 | 1995-01-03 | Autoclave Engineers, Inc. | Precision cleaning system |
US5417768A (en) * | 1993-12-14 | 1995-05-23 | Autoclave Engineers, Inc. | Method of cleaning workpiece with solvent and then with liquid carbon dioxide |
US5908510A (en) * | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
US5931721A (en) * | 1994-11-07 | 1999-08-03 | Sumitomo Heavy Industries, Ltd. | Aerosol surface processing |
US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
US6332470B1 (en) * | 1997-12-30 | 2001-12-25 | Boris Fishkin | Aerosol substrate cleaner |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6066032A (en) * | 1997-05-02 | 2000-05-23 | Eco Snow Systems, Inc. | Wafer cleaning using a laser and carbon dioxide snow |
-
2003
- 2003-04-03 CN CN038103621A patent/CN1665609A/zh active Pending
- 2003-04-03 WO PCT/US2003/010354 patent/WO2003086668A1/en active Application Filing
- 2003-04-03 KR KR10-2004-7015867A patent/KR20040098054A/ko not_active Application Discontinuation
- 2003-04-03 EP EP03728337A patent/EP1494821A4/de not_active Withdrawn
- 2003-04-03 AU AU2003233485A patent/AU2003233485A1/en not_active Abandoned
- 2003-04-03 JP JP2003583667A patent/JP2005522056A/ja active Pending
Patent Citations (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4631250A (en) * | 1985-03-13 | 1986-12-23 | Research Development Corporation Of Japan | Process for removing covering film and apparatus therefor |
US4695327A (en) * | 1985-06-13 | 1987-09-22 | Purusar Corporation | Surface treatment to remove impurities in microrecesses |
EP0241749A1 (de) * | 1986-04-15 | 1987-10-21 | Messer Griesheim Gmbh | Verfahren zum Entfernen von auf der Oberfläche von Werkstücken haftenden Materialresten |
US5081068A (en) * | 1989-07-17 | 1992-01-14 | Mitsubishi Denki Kabushiki Kaisha | Method of treating surface of substrate with ice particles and hydrogen peroxide |
US5377705A (en) * | 1993-09-16 | 1995-01-03 | Autoclave Engineers, Inc. | Precision cleaning system |
US5417768A (en) * | 1993-12-14 | 1995-05-23 | Autoclave Engineers, Inc. | Method of cleaning workpiece with solvent and then with liquid carbon dioxide |
US5931721A (en) * | 1994-11-07 | 1999-08-03 | Sumitomo Heavy Industries, Ltd. | Aerosol surface processing |
US6203406B1 (en) * | 1994-11-07 | 2001-03-20 | Sumitomo Heavy Industries, Ltd. | Aerosol surface processing |
US5908510A (en) * | 1996-10-16 | 1999-06-01 | International Business Machines Corporation | Residue removal by supercritical fluids |
US6306564B1 (en) * | 1997-05-27 | 2001-10-23 | Tokyo Electron Limited | Removal of resist or residue from semiconductors using supercritical carbon dioxide |
US6332470B1 (en) * | 1997-12-30 | 2001-12-25 | Boris Fishkin | Aerosol substrate cleaner |
Non-Patent Citations (1)
Title |
---|
See also references of WO03086668A1 * |
Also Published As
Publication number | Publication date |
---|---|
EP1494821A4 (de) | 2009-11-25 |
WO2003086668A1 (en) | 2003-10-23 |
JP2005522056A (ja) | 2005-07-21 |
CN1665609A (zh) | 2005-09-07 |
KR20040098054A (ko) | 2004-11-18 |
AU2003233485A1 (en) | 2003-10-27 |
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