CN1653566A - 具有高能量密度的电容器 - Google Patents
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- 239000003990 capacitor Substances 0.000 title claims abstract description 41
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910002113 barium titanate Inorganic materials 0.000 claims abstract description 13
- 238000005516 engineering process Methods 0.000 claims description 5
- 238000004146 energy storage Methods 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 238000001914 filtration Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 230000010363 phase shift Effects 0.000 claims description 2
- 230000001413 cellular effect Effects 0.000 claims 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 9
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 5
- 239000006185 dispersion Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000003985 ceramic capacitor Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000007772 electroless plating Methods 0.000 description 3
- 239000003792 electrolyte Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000001764 infiltration Methods 0.000 description 2
- 230000008595 infiltration Effects 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 1
- WGLPBDUCMAPZCE-UHFFFAOYSA-N Trioxochromium Chemical compound O=[Cr](=O)=O WGLPBDUCMAPZCE-UHFFFAOYSA-N 0.000 description 1
- 230000001476 alcoholic effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- RQPZNWPYLFFXCP-UHFFFAOYSA-L barium dihydroxide Chemical compound [OH-].[OH-].[Ba+2] RQPZNWPYLFFXCP-UHFFFAOYSA-L 0.000 description 1
- 229910001863 barium hydroxide Inorganic materials 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000003610 charcoal Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910000423 chromium oxide Inorganic materials 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910001416 lithium ion Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- UUCCCPNEFXQJEL-UHFFFAOYSA-L strontium dihydroxide Chemical compound [OH-].[OH-].[Sr+2] UUCCCPNEFXQJEL-UHFFFAOYSA-L 0.000 description 1
- 229910001866 strontium hydroxide Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/005—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/12—Ceramic dielectrics
- H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
- H01G4/1218—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates
- H01G4/1227—Ceramic dielectrics characterised by the ceramic dielectric material based on titanium oxides or titanates based on alkaline earth titanates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/16—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor
- H05K1/162—Printed circuits incorporating printed electric components, e.g. printed resistor, capacitor, inductor incorporating printed capacitors
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Electric Double-Layer Capacitors Or The Like (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Ceramic Capacitors (AREA)
Abstract
一种具有高能量密度的电容器，包括惰性多孔状体，在所述体积上施加有第一导电层、第二钛酸钡层、以及另一导电层。
Description
技术领域
本发明涉及包括惰性多孔状体的电容器，在所述体上施加有第一导电层、第二钛酸钡层以及另一导电层。
背景技术
电容器在信息技术和电能工程中发挥了很多作用。最近正在研制一种电容器，其具有高能量密度，并且可以用作电池，或用于满足短期高负载要求。
Electrochemica Acta 45(2000)，2483到2498页，公开了电气化学或双层电容器。这些装置，又称作超级电容器或超大电容器，在两个串联的电容器中存储电能，所述每个电容器在两个电极和电解液离子之间形成电双层。其中电荷隔开的距离只是几埃。在电解液中，使用内表面面积达到2500m2/g的多孔炭。电容公式为：
C＝E0·E·A/d
其中C是电容量，E0是绝对介电常数，E是电介质的介电常数，A是电容器的面积，以及d是电极间的距离，在大面积A和小间距d的情况下，电容量可能达到100F/cm3。
目前的这种双层电容器(超级电容器)，其能量密度达到了3到7Wh/kg或Wh/l，这是远小于常规电池的能量密度的(锂离子电池达到了150至200Wh/kg)。这是由于，电解液的电化学的稳定性限制了所加的最大可能电压值为约3.5V。
另一方面，存在可以在高压下工作的电容器，即，包括钛酸钡电介质的陶瓷电容器。
由于钛酸盐的高电介质击穿阻抗达到200V/0.1μm，包括钛酸钡电介质、并工作于高工作电压下的陶瓷电容器，在现有技术中是公知的。然而，陶瓷电容器的电容量相对较小。
发明内容
本发明的目的是改善上述缺点。
经研究，一种新的改进的电容器可以达到该目的，所述电容器包括惰性多孔状体，在所述体上施加有第一导电层、第二钛酸钡层、以及另一导电层。
具体实施方式
可如下制造本发明的电容器：
在第一步，可以对惰性多孔状体提供第一导电层，并可以给所述导电层提供接点。在第一层的上面可以施加第二钛酸钡层，以及，最后在该钛酸钡层的上面可以施加另一导电层，并可以给该导电层提供接点。可以将这样形成的电容器除电接点外都密封起来。
合适的多孔状体一般是催化剂载体材料，例如金属氧化物，如氧化铝、二氧化硅、二氧化钛、二氧化锆、氧化铬或其混合物，优选地是氧化铝、二氧化硅、二氧化钛、二氧化锆或其混合物，尤其优选地是氧化铝、二氧化锆或其混合物；或碳化物，优选炭化硅，其包括：BET表面积是0.1至20m2/g，优选地是0.5至10m2/g，尤其优选地是1至5m2/g；孔含量是体积的10至90％，优选地是体积的30至85％，尤其优选地是体积的50至80％；以及孔尺寸是0.01至100μm，优选地是0.1至30μm，尤其优选地是1至10μm。
成形体可以是任何形状，例如环形、球形、星形、车轮形、蜂窝形，优选地为一般任何尺寸(直径、最长边长度)的立方形、圆柱形、矩形或盒形。在用于信息技术的电容器中，例如，尺寸一般在1至10mm的范围内。在能源工程中需要更大的尺度。
为了在成形体上制造第一层导电层，可以施加任意厚度的金属层，例如铜、镍、铬或其混合物，层厚一般是10hm至1000nm，优选地是50nm至500nm，尤其优选地是100nm至200nm。
利用公知的方法，例如气相沉积、阴极溅射或无电电镀，优选为无电电镀，可以对成形体施加导电层。在无电电镀中，用合适的可购得的镀液渗透或浸渍成形体，并将其温度加热到100℃以下，以淀积金属。在淀积金属后，可以在升高的温度下和，如果希望，减小的压力下除去通常是水的液体。
也可以例如在铁或镍的情况下，通过在羰基铁或羰基镍蒸汽中加热成形体制造第一导电层。在铁的情况下，可以在150至200℃的温度加热成形体，在镍的情况下，在50到100℃的温度加热。
在优选实施例中，可以在惰性气体(例如氮气或氩气)中以50到100℃的升高的温度加热成形体，以制造均匀金属层。同样通过以合适的液体浸渍(见上述)施加结晶核将是有利的，所述核如基于铂金属的核。
最后，可以给第一金属层提供接点。例如，可以如下实施，在覆盖金属的成形体的区域上焊接金属片(制造第一个电极)。
然后，可以在最初制造的电极的上面施加电介质。这可以通过利用酒精中具有小于10nm的尺寸的钛酸盐晶体粒子的分散体，有利地实施。如在德国申请No.102 21 499.9(O.Z.0050/53537)中所述，通过烷氧基钛与氢氧化钡或氢氧化锶在酒精溶液中的反应，可以制备该分散体。
可以用这种分散体渗透或浸渍所述成形体，在分散体中可以包括占5到60重量％，优选地占10到40重量％的钛酸盐粒子，随后，通过将温度升高到30-100℃，优选地50-80℃，并且，如果希望，减小环境压力，以在第一电极上淀积钛粒子，从而除去酒精。
为制造均匀、稠密的电介质层，可以在惰性气体中将成形体加热到700到1200℃，优选地为900到1100℃，从而钛酸盐粒子烧结在一起而形成稠密的膜。
为增加层厚，可以重复几遍用钛酸盐分散体浸渍和烧结的过程。层厚一般从10到1000nm，优选地从20到500nm，尤其优选地从100到300nm。
最后，可以使用类似于在施加第一电极层时使用的方式，施加第二电极层。
在施加第二电极层后，可以在与第一接点相对的面上为第二电极层提供接点，从而制造电容器。可以将电容器密封，用于起到保护和绝缘的作用。
本发明的电容器在电能工程中适合作平滑电容器、能量分组电容器、或相移电容器，在信息技术中适合作耦合电容器、滤波电容器或小型能量存储电容器。
本发明的电容器可以如下所述：
比表面积(BET表面积)为2m2/g的多孔状体，在相对电介质常数为5000时，厚度为0.1μm的钛酸钡层(“The Effect of Grain Size on theDielectric Properties of Barium Titanate Ceramic”，A.J.Bell and A.J.Moulson，in Electrical Ceramics，British Ceramic Proceeding No.36，1985年10月，57-65页)，根据第1页，第29行的公式计算出，电容量大约为1F/cm3。该电容器可以通200V的电压，并且其能量密度是20000Ws/cm3或大约5.5k kWh/l。
Claims (6)
1.一种包括惰性多孔状体的电容器，在所述多孔状体上施加有第一导电层、第二钛酸钡层以及另一导电层。
2.根据权利要求1的电容器，由惰性多孔状体构成，在所述多孔状体上施加有第一导电层、第二钛酸钡层以及另一导电层。
3.根据权利要求1或2的电容器，其中惰性多孔状体的BET表面积是0.1到20m2/g。
4.根据权利要求1、2和3的任意一项的电容器，其中惰性多孔状体的孔含量是体积的10到90％。
5.一种制造根据权利要求1、2、3和4的任意一项的电容器的方法，包括：在惰性多孔状体积上施加具有接点的导电层，在所述导电层的上面施加钛酸钡层，以及在所述钛酸钡层的上面施加具有接点的导电层。
6.所述电容器在电能工程中用作平滑电容器、能量存储电容器、或相移电容器，在信息技术中用作耦合电容器、滤波电容器或小型能量存储电容器。
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE10221498.0 | 2002-05-14 | ||
| DE10221498A DE10221498A1 (de) | 2002-05-14 | 2002-05-14 | Kondensatoren hoher Energiedichte |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1653566A true CN1653566A (zh) | 2005-08-10 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA03810573XA Pending CN1653566A (zh) | 2002-05-14 | 2003-05-12 | 具有高能量密度的电容器 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US20030214776A1 (zh) |
| EP (1) | EP1506555A2 (zh) |
| JP (1) | JP2005525700A (zh) |
| KR (1) | KR20040106399A (zh) |
| CN (1) | CN1653566A (zh) |
| AU (1) | AU2003242534A1 (zh) |
| DE (1) | DE10221498A1 (zh) |
| TW (1) | TW200401314A (zh) |
| WO (1) | WO2003096362A2 (zh) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189945A (zh) * | 2010-11-11 | 2013-07-03 | 罗伯特·博世有限公司 | 用于制造电容性存储器元件的方法、存储器元件及其应用 |
| CN105161304A (zh) * | 2015-06-22 | 2015-12-16 | 广东明路电力电子有限公司 | 蜂窝电极电容器 |
| CN108666134A (zh) * | 2017-03-27 | 2018-10-16 | 三星电机株式会社 | 电容器组件 |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| ATE346825T1 (de) * | 2002-05-14 | 2006-12-15 | Basf Ag | Verfahren zur herstellung von barium- oder strontiumtitanat mit mittleren durchmessern kleiner als 10 nanometer |
| DE102004052086A1 (de) * | 2004-10-26 | 2006-04-27 | Basf Ag | Kondensatoren hoher Energiedichte |
| CN101432831A (zh) * | 2006-04-26 | 2009-05-13 | 巴斯夫欧洲公司 | 生产具有电介质的多孔、导电基质材料的涂层的方法和通过使用此方法生产高电容密度电容器的方法 |
| EP2392021A2 (en) * | 2009-02-02 | 2011-12-07 | Space Charge, LLC | Capacitors using preformed dielectric |
| US20100200393A1 (en) * | 2009-02-09 | 2010-08-12 | Robert Chow | Sputter deposition method and system for fabricating thin film capacitors with optically transparent smooth surface metal oxide standoff layer |
| WO2011050374A1 (de) | 2009-10-30 | 2011-05-05 | Franz Oberthaler | Elektrischer kondensator mit einer hohen energiedichte |
| WO2011000974A2 (en) | 2010-10-19 | 2011-01-06 | Phonak Ag | Hearing instrument comprising a rechargeable power source |
| US9396880B2 (en) | 2011-11-16 | 2016-07-19 | Martin A. Stuart | High energy density storage device |
| EP2780919B1 (en) * | 2011-11-16 | 2017-07-19 | Martin A. Stuart | High energy density storage device |
| US9287701B2 (en) | 2014-07-22 | 2016-03-15 | Richard H. Sherratt and Susan B. Sherratt Revocable Trust Fund | DC energy transfer apparatus, applications, components, and methods |
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| US4061584A (en) * | 1974-12-13 | 1977-12-06 | General Electric Company | High dielectric constant ink for thick film capacitors |
| EP0146284B1 (en) * | 1983-11-29 | 1988-06-29 | Sony Corporation | Methods of manufacturing dielectric metal titanates |
| JPH0653253B2 (ja) * | 1986-11-08 | 1994-07-20 | 松下電工株式会社 | セラミツク基板の粗化法 |
| US4766522A (en) * | 1987-07-15 | 1988-08-23 | Hughes Aircraft Company | Electrochemical capacitor |
| JP2787953B2 (ja) | 1989-08-03 | 1998-08-20 | イビデン株式会社 | 電子回路基板 |
| JP2536458B2 (ja) * | 1994-08-16 | 1996-09-18 | 日本電気株式会社 | ジスルホン酸化合物、それをド―パントとする導電性高分子、導電材およびそれを用いた固体電解コンデンサ |
| EP0714108B1 (en) * | 1994-11-25 | 1999-11-03 | Nec Corporation | Solid electrolytic capacitor having two solid electrolyte layers and method of manufacturing the same |
| US5600535A (en) * | 1994-12-09 | 1997-02-04 | The United States Of America As Represented By The Secretary Of The Army | Amorphous thin film electrode materials from hydrous metal oxides |
| US5790368A (en) * | 1995-06-27 | 1998-08-04 | Murata Manufacturing Co., Ltd. | Capacitor and manufacturing method thereof |
| US5825611A (en) * | 1997-01-29 | 1998-10-20 | Vishay Sprague, Inc. | Doped sintered tantalum pellets with nitrogen in a capacitor |
| JP3391269B2 (ja) * | 1998-01-20 | 2003-03-31 | 株式会社村田製作所 | 誘電体セラミックおよびその製造方法、ならびに、積層セラミック電子部品およびその製造方法 |
| DE19943103A1 (de) * | 1999-09-09 | 2001-03-15 | Wacker Chemie Gmbh | Hochgefüllte SiO2-Dispersion, Verfahren zu ihrer Herstellung und Verwendung |
| US6519136B1 (en) * | 2002-03-29 | 2003-02-11 | Intel Corporation | Hybrid dielectric material and hybrid dielectric capacitor |
-
2002
- 2002-05-14 DE DE10221498A patent/DE10221498A1/de not_active Withdrawn
-
2003
- 2003-05-12 WO PCT/EP2003/004928 patent/WO2003096362A2/de active Application Filing
- 2003-05-12 EP EP03749884A patent/EP1506555A2/de not_active Withdrawn
- 2003-05-12 AU AU2003242534A patent/AU2003242534A1/en not_active Abandoned
- 2003-05-12 US US10/435,081 patent/US20030214776A1/en not_active Abandoned
- 2003-05-12 CN CNA03810573XA patent/CN1653566A/zh active Pending
- 2003-05-12 KR KR10-2004-7017255A patent/KR20040106399A/ko not_active Application Discontinuation
- 2003-05-12 JP JP2004504248A patent/JP2005525700A/ja active Pending
- 2003-05-12 US US10/513,361 patent/US7023687B2/en not_active Expired - Fee Related
- 2003-05-13 TW TW092112940A patent/TW200401314A/zh unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103189945A (zh) * | 2010-11-11 | 2013-07-03 | 罗伯特·博世有限公司 | 用于制造电容性存储器元件的方法、存储器元件及其应用 |
| CN103189945B (zh) * | 2010-11-11 | 2016-06-29 | 罗伯特·博世有限公司 | 用于制造电容性存储器元件的方法、存储器元件及其应用 |
| US9583263B2 (en) | 2010-11-11 | 2017-02-28 | Robert Bosch Gmbh | Method for manufacturing a capacitive storage element, storage element and its use |
| CN105161304A (zh) * | 2015-06-22 | 2015-12-16 | 广东明路电力电子有限公司 | 蜂窝电极电容器 |
| CN108666134A (zh) * | 2017-03-27 | 2018-10-16 | 三星电机株式会社 | 电容器组件 |
| CN108666134B (zh) * | 2017-03-27 | 2021-03-09 | 三星电机株式会社 | 电容器组件 |
Also Published As
| Publication number | Publication date |
|---|---|
| AU2003242534A1 (en) | 2003-11-11 |
| WO2003096362A3 (de) | 2004-08-26 |
| WO2003096362A2 (de) | 2003-11-20 |
| AU2003242534A8 (en) | 2003-11-11 |
| KR20040106399A (ko) | 2004-12-17 |
| DE10221498A1 (de) | 2003-12-04 |
| US20050152090A1 (en) | 2005-07-14 |
| TW200401314A (en) | 2004-01-16 |
| EP1506555A2 (de) | 2005-02-16 |
| US7023687B2 (en) | 2006-04-04 |
| US20030214776A1 (en) | 2003-11-20 |
| JP2005525700A (ja) | 2005-08-25 |
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