CN1643655A - 使用内存字线硬掩膜延伸部的集成电路制造方法 - Google Patents
使用内存字线硬掩膜延伸部的集成电路制造方法 Download PDFInfo
- Publication number
- CN1643655A CN1643655A CNA038063220A CN03806322A CN1643655A CN 1643655 A CN1643655 A CN 1643655A CN A038063220 A CNA038063220 A CN A038063220A CN 03806322 A CN03806322 A CN 03806322A CN 1643655 A CN1643655 A CN 1643655A
- Authority
- CN
- China
- Prior art keywords
- hard mask
- integrated circuit
- deposition
- word line
- patterned
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/109,516 | 2002-03-27 | ||
US10/109,516 US6479348B1 (en) | 2002-03-27 | 2002-03-27 | Method of making memory wordline hard mask extension |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1643655A true CN1643655A (zh) | 2005-07-20 |
CN100343955C CN100343955C (zh) | 2007-10-17 |
Family
ID=22328091
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB038063220A Expired - Lifetime CN100343955C (zh) | 2002-03-27 | 2003-01-21 | 使用内存字线硬掩膜延伸部的集成电路制造方法 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6479348B1 (zh) |
JP (1) | JP2005522029A (zh) |
KR (1) | KR100987505B1 (zh) |
CN (1) | CN100343955C (zh) |
AU (1) | AU2003217233A1 (zh) |
DE (1) | DE10392314B4 (zh) |
GB (1) | GB2409573B (zh) |
TW (1) | TWI261338B (zh) |
WO (1) | WO2003083916A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621033B (zh) * | 2008-07-04 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 刻蚀闪存中介电存储层的方法 |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6653190B1 (en) * | 2001-12-15 | 2003-11-25 | Advanced Micro Devices, Inc. | Flash memory with controlled wordline width |
US6706595B2 (en) * | 2002-03-14 | 2004-03-16 | Advanced Micro Devices, Inc. | Hard mask process for memory device without bitline shorts |
US6620717B1 (en) * | 2002-03-14 | 2003-09-16 | Advanced Micro Devices, Inc. | Memory with disposable ARC for wordline formation |
US6720133B1 (en) * | 2002-04-19 | 2004-04-13 | Advanced Micro Devices, Inc. | Memory manufacturing process using disposable ARC for wordline formation |
US6853035B1 (en) * | 2002-06-28 | 2005-02-08 | Synopsys, Inc. | Negative differential resistance (NDR) memory device with reduced soft error rate |
US7291013B2 (en) * | 2002-06-28 | 2007-11-06 | Zimmer Dental, Inc. | Organic shaped interface for dental implant devices |
US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
US7026170B1 (en) | 2003-06-11 | 2006-04-11 | Advanced Micro Devices, Inc. | Methods of controlling optical properties of a capping insulating layer on memory devices, and system for performing same |
US7153744B2 (en) * | 2003-12-03 | 2006-12-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of forming self-aligned poly for embedded flash |
US7906418B2 (en) * | 2003-12-03 | 2011-03-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device having substantially planar contacts and body |
US6962849B1 (en) | 2003-12-05 | 2005-11-08 | Advanced Micro Devices, Inc. | Hard mask spacer for sublithographic bitline |
US6958272B2 (en) * | 2004-01-12 | 2005-10-25 | Advanced Micro Devices, Inc. | Pocket implant for complementary bit disturb improvement and charging improvement of SONOS memory cell |
US6872609B1 (en) | 2004-01-12 | 2005-03-29 | Advanced Micro Devices, Inc. | Narrow bitline using Safier for mirrorbit |
US7018868B1 (en) * | 2004-02-02 | 2006-03-28 | Advanced Micro Devices, Inc. | Disposable hard mask for memory bitline scaling |
US7160773B2 (en) * | 2004-05-05 | 2007-01-09 | Spansion Llc | Methods and apparatus for wordline protection in flash memory devices |
US6989320B2 (en) * | 2004-05-11 | 2006-01-24 | Advanced Micro Devices, Inc. | Bitline implant utilizing dual poly |
US7176113B1 (en) | 2004-06-07 | 2007-02-13 | Spansion Llc | LDC implant for mirrorbit to improve Vt roll-off and form sharper junction |
US20070111449A1 (en) * | 2005-11-16 | 2007-05-17 | Hsu-Sheng Yu | Non-volatile memory cell and method for manufacturing the same |
KR100753083B1 (ko) * | 2006-04-28 | 2007-08-31 | 주식회사 하이닉스반도체 | 반도체소자의 리세스채널 형성 방법 |
JP2008166528A (ja) * | 2006-12-28 | 2008-07-17 | Spansion Llc | 半導体装置およびその製造方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5488579A (en) * | 1994-04-29 | 1996-01-30 | Motorola Inc. | Three-dimensionally integrated nonvolatile SRAM cell and process |
EP0731501A1 (en) * | 1995-03-08 | 1996-09-11 | International Business Machines Corporation | Method for plasma etching an oxide/polycide structure |
DE19603810C1 (de) * | 1996-02-02 | 1997-08-28 | Siemens Ag | Speicherzellenanordnung und Verfahren zu deren Herstellung |
TW336351B (en) * | 1997-10-08 | 1998-07-11 | Winbond Electronics Corp | Metal wire structure and process for producing the same |
US6081456A (en) * | 1999-02-04 | 2000-06-27 | Tower Semiconductor Ltd. | Bit line control circuit for a memory array using 2-bit non-volatile memory cells |
JP3895069B2 (ja) * | 1999-02-22 | 2007-03-22 | 株式会社東芝 | 半導体装置とその製造方法 |
US6538270B1 (en) * | 2000-05-16 | 2003-03-25 | Advanced Micro Devices, Inc. | Staggered bitline strapping of a non-volatile memory cell |
US6269023B1 (en) * | 2000-05-19 | 2001-07-31 | Advanced Micro Devices, Inc. | Method of programming a non-volatile memory cell using a current limiter |
JP3573691B2 (ja) * | 2000-07-03 | 2004-10-06 | シャープ株式会社 | 不揮発性半導体記憶装置およびその製造方法 |
DE10038877A1 (de) * | 2000-08-09 | 2002-02-28 | Infineon Technologies Ag | Speicherzelle und Herstellungsverfahren |
TW471024B (en) * | 2001-01-20 | 2002-01-01 | United Microelectronics Corp | Lithography etching method |
US6403417B1 (en) * | 2001-03-13 | 2002-06-11 | United Microelectronics Corp. | Method for in-situ fabrication of a landing via and a strip contact in an embedded memory |
-
2002
- 2002-03-27 US US10/109,516 patent/US6479348B1/en not_active Expired - Lifetime
-
2003
- 2003-01-21 CN CNB038063220A patent/CN100343955C/zh not_active Expired - Lifetime
- 2003-01-21 DE DE10392314T patent/DE10392314B4/de not_active Expired - Lifetime
- 2003-01-21 AU AU2003217233A patent/AU2003217233A1/en not_active Abandoned
- 2003-01-21 KR KR1020047014841A patent/KR100987505B1/ko not_active IP Right Cessation
- 2003-01-21 GB GB0419978A patent/GB2409573B/en not_active Expired - Fee Related
- 2003-01-21 JP JP2003581243A patent/JP2005522029A/ja active Pending
- 2003-01-21 WO PCT/US2003/001851 patent/WO2003083916A1/en active Application Filing
- 2003-03-24 TW TW092106472A patent/TWI261338B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101621033B (zh) * | 2008-07-04 | 2011-06-15 | 中芯国际集成电路制造(上海)有限公司 | 刻蚀闪存中介电存储层的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN100343955C (zh) | 2007-10-17 |
US6479348B1 (en) | 2002-11-12 |
AU2003217233A1 (en) | 2003-10-13 |
GB2409573A (en) | 2005-06-29 |
GB2409573B (en) | 2005-12-07 |
WO2003083916A1 (en) | 2003-10-09 |
KR20050002876A (ko) | 2005-01-10 |
JP2005522029A (ja) | 2005-07-21 |
KR100987505B1 (ko) | 2010-10-13 |
TWI261338B (en) | 2006-09-01 |
DE10392314B4 (de) | 2008-08-14 |
TW200305979A (en) | 2003-11-01 |
DE10392314T5 (de) | 2005-05-12 |
GB0419978D0 (en) | 2004-10-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C41 | Transfer of patent application or patent right or utility model | ||
TR01 | Transfer of patent right |
Effective date of registration: 20160411 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: Delaware Patentee before: SPANSION LLC |
|
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20220623 Address after: California, USA Patentee after: Infineon Technology Co.,Ltd. Address before: California, USA Patentee before: CYPRESS SEMICONDUCTOR Corp. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20071017 |