CN1632910A - Control wafer recovery and regenerating method and control wafer structure thereof - Google Patents
Control wafer recovery and regenerating method and control wafer structure thereof Download PDFInfo
- Publication number
- CN1632910A CN1632910A CN 200310122889 CN200310122889A CN1632910A CN 1632910 A CN1632910 A CN 1632910A CN 200310122889 CN200310122889 CN 200310122889 CN 200310122889 A CN200310122889 A CN 200310122889A CN 1632910 A CN1632910 A CN 1632910A
- Authority
- CN
- China
- Prior art keywords
- control sheet
- mixed solution
- mentioned
- hno
- reclaiming utilization
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Landscapes
- Weting (AREA)
Abstract
It is a recycling controllable slice method, which comprises the following steps: first to deposit SiN film on the control slice; to dip the coating film control slice into one mixture to remove the above coating film, wherein the mixture liquid comprises HF,HNO#-[3],DIW. It is a recycling control slice structure, which comprises one underlay and one SiN film and one mixture liquid with HF,HNO#-[3], DIW.
Description
Technical field
The present invention and a kind of semiconductor fabrication, particularly a kind of by coating control sheet reclaiming (the reclaim control/dummy wafer) method of (pre-coated) silicon nitride (SiN) on wafer (wafer) in advance with and the control chip architecture.
Background technology
Semiconductor subassembly utilizes highdensity integrated circuit technique to have sizable progress.Utilize the exploitation of stepper, high-resolution little shadow (lithography) equipment and etching technique, make semiconductor more quicken evolution.Usually, the step of making integrated circuit includes the fabrication steps in hundreds of roads, therefore processing procedure process complexity not only, and how effectively group to appoint the workload of process work bench and job specification also be the work of a complexity with the utilization of promoting resource.In manufacture process, make bottleneck and often occur in the production capacity that has influence on processing procedure in many fabrication steps at any time, for example, processing procedure speed, capacity utilization, apparatus of load density or the like all are the factors that influences production capacity.
Multiple internal connecting lines (multi-level interconnection) also is one of structure important in the integrated circuit.By multiplex conductor connect make the transistor (transistor), capacitor (capcitor) and the resistance basic building blocks such as (resistor) that are configured in Semiconductor substrate (substrate) can electrical couplings (couple) to finish specific function.Aluminum metal contacts as electrical with the intraconnections that titanium is used for semiconductor technology at large, general aluminum or aluminum alloy is formed on the silicon film, and the contact-making surface of this aluminium-silicon, aluminium/silicon/copper (AlSiCu) alloy can be used to make the material of more low-resistance structure as intraconnections (interconnection).Utilize copper (Cu) to become possibility based on the exploitation of Progress in technique and CMP (chemical mechanical polishing) is feasible as intraconnections.Low and because of the impedance of copper to electromigration (electro-migration) patience height, so be that the Cu processing procedure of material develops and becomes important techniques in the deep-sub-micrometer with copper.The control sheet (control/dummywafer) that present copper metallization (Cu metallization) is adopted must use Ta/TaN as barrier layer (barrier layer).For reclaiming utilization control sheet (reclaim control/dummy wafer), the Ta/TaN barrier layer must be removed, and can cause the consume of silicon (Si) material in the removal process more usually.The main at present method that adopts two kinds of reclaiming utilization control sheets, a kind of is to adopt sulfuric acid solution mixing hydrofluoric acid solution to remove above-mentioned metal level, however it needs higher temperature and etch-rate slow.Another kind of mode is to adopt chemical mechanical milling method, and just CMP (chemical mechanical polishing) removes metal level, and then utilizes hydrofluoric acid solution to remove silicon dioxide.But the cost of the method is too high.
Therefore at present be badly in need of a kind of method that can reclaiming utilization control sheet (reclaim control/dummy wafer).
Summary of the invention
Main purpose of the present invention provide a kind of by coating control sheet reclaiming (the reclaim control/dummy wafer) method of (pre-coated) silicon nitride (SiN) on wafer (wafer) in advance with and the control chip architecture.
A further object of the present invention is to provide a kind of control sheet reclaiming method that is applicable to copper wiring.
A kind of method of reclaiming utilization control sheet comprises: deposit a silicon nitride film (SiN film) on the control sheet; And the control sheet of coating film is soaked in the film that is beneficial to remove above-mentioned coating in the mixed solution, this mixed solution comprises HF, HNO
3, DIW (deionized water).Wherein above-mentioned mixed solution composition is HF: HNO
3: DIW (deionized water)=1: 6: 4, the HF concentration of mixed solution is 49%, HNO
3Concentration is 70%.The control sheet is immersed in and soaked four minutes under the condition of 200% over etching and the control sheet is immersed in operation at room temperature.
The control chip architecture of reclaiming utilization control sheet of the present invention comprises a substrate and a silicon nitride film (SiN film) and is formed on the substrate; And this control sheet can be soaked in the film that is beneficial to remove coating in the mixed solution, and this mixed solution comprises HF, HNO
3, DIW (deionized water).
Adopt said method can reduce the cost that the control sheet is recycled, improve recovery speed, and safer.
Description of drawings
Fig. 1 is a flow chart of the present invention.
Embodiment
The present invention for provide a kind of by coating control sheet reclaiming (the reclaim control/dummy wafer) method of (pre-coated) silicon nitride (SiN) on wafer (wafer) in advance with and the control chip architecture.Method of the present invention and structure are applicable to the recovery and the regeneration of the control sheet of copper wiring, and the effect of this method is not only with low cost and safer.
Consult Fig. 1, as controlling sheet (control/dummy wafer) substrate as an example, in order to limit the present invention, at first step 100 does not deposit a silicon nitride film (SiN film) on above-mentioned control sheet with chemical vapour deposition technique in boiler tube with a monocrystalline silicon.Follow the use of control sheet to carry out the thin film deposition (200) of main processing procedure subsequently.The film control that to grow up be can monitor by traditional using method of control sheet, monitoring program depositing of thin film or growth are beneficial to.
Finish after the main process thin film deposition, the reclaiming of control sheet can be utilized (reclaimcontrol/dummy wafer) usually, to save the cost expenditure.The present invention is that the control sheet with the coating film is soaked in the film that is beneficial to remove above-mentioned coating in the mixed acid solution.The present invention can be suitable for following structure, it must be appreciated that following parameter and aspect only do an explanation and a reference, and is non-in order to limit this
Scope of invention.
| With reference to aspect | Reference configuration | Reference thickness (kA) |
| ???B?and?S | ??????SiN/PE-oxide/TaN/Ta ??????SiN/PE-oxide/TaN/Ta/Cu | ?????????1.15/4/0.15/1.2 ?????????1.15/4/0.15/1.2/10 |
| ???ECP | ??????SiN/PE-oxide/TaN/Ta/Cu | ?????????1.15/4/0.15/1.2/20 |
| ???CMP | ??????SiN/PE-oxide/TaN/Ta/Cu | ?????????1.15/4/0.15/1.2/100 |
The removal method that control sheet of the present invention (control and dummy wafer) is gone up the major metal layer is that it is immersed in the acid solution that mixes (300), and this acid solution comprises HF, HNO
3, DIW, HF: HNO
3: DIW (deionized water)=1: 6: 4, HF and HNO
3Concentration is respectively HF 49%, HNO
370%.Under the condition of 200% over etching, soaked four minutes.Operation at room temperature.Above-mentioned solution also can corrode the SiN material, and approximately positive 100 dusts and the 200 dust back sides can be used the control sheet safely at least five times according to method of the present invention.
Claims (18)
1. the method for a reclaiming utilization control sheet is characterized in that comprising:
Deposit a silicon nitride film on the control sheet; And
The control sheet of coating film is soaked in the film that is beneficial to remove above-mentioned coating in the mixed solution, and this mixed solution comprises HF, HNO
3, DIW.
2. the method for reclaiming utilization control sheet as claimed in claim 1, wherein above-mentioned mixed solution composition is HF: HNO
3: DIW=1: 6: 4.
3. the method for reclaiming utilization control sheet as claimed in claim 2, wherein the HF concentration of above-mentioned mixed solution is 49%.
4. the method for reclaiming utilization control sheet as claimed in claim 2, the wherein HNO of above-mentioned mixed solution
3Concentration is 70%.
5. the method for reclaiming utilization control sheet as claimed in claim 1, wherein above-mentioned control sheet are immersed under the condition of 200% over etching soaked four minutes.
6. the method for reclaiming utilization control sheet as claimed in claim 1, wherein above-mentioned control sheet is immersed under the room temperature to be operated.
7. the mixed solution of a reclaiming utilization control sheet is characterized in that composition comprises HF, HNO
3, DIW.
8. the mixed solution of reclaiming utilization control sheet as claimed in claim 7, wherein above-mentioned mixed solution composition is HF: HNO
3: DIW=1: 6: 4,
9. the mixed solution of reclaiming utilization control sheet as claimed in claim 7, wherein the HF concentration of above-mentioned mixed solution is 49%.
10. the mixed solution of reclaiming utilization control sheet as claimed in claim 7, the wherein HNO of above-mentioned mixed solution
3Concentration is 70%.
11. being immersed under the condition of 200% over etching, the mixed solution of reclaiming utilization control sheet as claimed in claim 7, wherein above-mentioned control sheet soaked four minutes.
12. the mixed solution of reclaiming utilization control sheet as claimed in claim 7, wherein above-mentioned control sheet is immersed under the room temperature to be operated.
13. the control chip architecture of a reclaiming utilization control sheet is characterized in that comprising: a substrate and a silicon nitride film are formed on the substrate; And this control sheet can be soaked in the film that is beneficial to remove coating in the mixed solution, and this mixed solution comprises HF, HNO
3, DIW.
14. the control chip architecture of reclaiming utilization control sheet as claimed in claim 13, wherein above-mentioned mixed solution composition is HF: HNO
3: DIW=1: 6: 4,
15. the control chip architecture of reclaiming utilization control sheet as claimed in claim 13, wherein the HF concentration of above-mentioned mixed solution is 49%.
16. the control chip architecture of reclaiming utilization control sheet as claimed in claim 13, the wherein HNO of above-mentioned mixed solution
3Concentration is 70%.
17. being immersed under the condition of 200% over etching, the control chip architecture of reclaiming utilization control sheet as claimed in claim 13, wherein above-mentioned control sheet soaked four minutes.
18. the control chip architecture of reclaiming utilization control sheet as claimed in claim 13, wherein above-mentioned control sheet is immersed under the room temperature to be operated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101228892A CN1315154C (en) | 2003-12-25 | 2003-12-25 | Control wafer recovery and regenerating method and control wafer structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101228892A CN1315154C (en) | 2003-12-25 | 2003-12-25 | Control wafer recovery and regenerating method and control wafer structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1632910A true CN1632910A (en) | 2005-06-29 |
| CN1315154C CN1315154C (en) | 2007-05-09 |
Family
ID=34844663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101228892A Expired - Fee Related CN1315154C (en) | 2003-12-25 | 2003-12-25 | Control wafer recovery and regenerating method and control wafer structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1315154C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456543A (en) * | 2010-10-21 | 2012-05-16 | 上海华虹Nec电子有限公司 | Negative film recycling method applied to batch treatment ion implanter |
| CN104779135A (en) * | 2014-01-10 | 2015-07-15 | 上海华虹宏力半导体制造有限公司 | Method of eliminating influences of control wafer during batch polysilicon deposition process |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2894153B2 (en) * | 1993-05-27 | 1999-05-24 | 信越半導体株式会社 | Method and apparatus for manufacturing silicon wafer |
| US6639312B2 (en) * | 2001-11-07 | 2003-10-28 | Matrix Semiconductor, Inc | Dummy wafers and methods for making the same |
| JP3997310B2 (en) * | 2002-03-04 | 2007-10-24 | コバレントマテリアル株式会社 | Silicon product purification method |
| CN1412820A (en) * | 2002-11-25 | 2003-04-23 | 中芯国际集成电路制造(上海)有限公司 | Method for recovering ion injection doping dose monitoring sheet |
-
2003
- 2003-12-25 CN CNB2003101228892A patent/CN1315154C/en not_active Expired - Fee Related
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456543A (en) * | 2010-10-21 | 2012-05-16 | 上海华虹Nec电子有限公司 | Negative film recycling method applied to batch treatment ion implanter |
| CN104779135A (en) * | 2014-01-10 | 2015-07-15 | 上海华虹宏力半导体制造有限公司 | Method of eliminating influences of control wafer during batch polysilicon deposition process |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1315154C (en) | 2007-05-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20030062068A1 (en) | Method of and system for cleaning a semiconductor wafer simultaneously using electrolytically ionized water and diluted hydrofluoric acid | |
| CN1181532C (en) | Method for producing semiconductor apparatus | |
| Contolini et al. | Electrochemical planarization for multilevel metallization | |
| EP0812011A2 (en) | Cleaning agent | |
| JP2005520044A (en) | Flat metal electrical treatment | |
| CN1137510C (en) | Method for making semi-conductor device | |
| US20030186544A1 (en) | Method of manufacturing a semiconductor device | |
| US20050148292A1 (en) | Method and apparatus for polishing a copper layer and method for forming a wiring structure using copper | |
| CN1231969C (en) | Semiconductor device with embedded electric conducting layer and producing method thereof | |
| CN1203531C (en) | Cleaning liquid component and cleaning process crystal wafer | |
| CN1315154C (en) | Control wafer recovery and regenerating method and control wafer structure thereof | |
| Contolini et al. | Electrochemical planarization of ULSI copper | |
| JP2001508944A (en) | Metallization layer passivation method | |
| CN100561681C (en) | Improve the method for defect of insulation dielectric layer and formation dual-damascene structure | |
| CN1533602A (en) | Dopant interface formaton of interconnect | |
| CN113186543B (en) | Post-chemical mechanical polishing cleaning solution and preparation method thereof | |
| CN1296973C (en) | Method for cleaning wave pattern structure of semiconductor wafer in mfg. semiconductor device | |
| CN1228472C (en) | Method for wet cleaning metal copper back | |
| CN1610078A (en) | Method for removing stripping of wafer edge | |
| TW424002B (en) | A cleaning method after finishing polishing process of Cu interconnection | |
| US20030221974A1 (en) | Electrolytic solution formulation for electropolishing process | |
| WO2010133550A1 (en) | Method for coating a semiconductor substrate by electrodeposition | |
| CN1554736A (en) | Pre cleaning solution recipe for deposit side wall medium of flash memory control grid stack structure | |
| CN1674215A (en) | Method for producing blocking-layer | |
| KR100434700B1 (en) | Method for forming copper of semiconductor device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| ASS | Succession or assignment of patent right |
Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070509 Termination date: 20181225 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |