CN1315154C - Control wafer recovery and regenerating method and control wafer structure thereof - Google Patents
Control wafer recovery and regenerating method and control wafer structure thereof Download PDFInfo
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- CN1315154C CN1315154C CNB2003101228892A CN200310122889A CN1315154C CN 1315154 C CN1315154 C CN 1315154C CN B2003101228892 A CNB2003101228892 A CN B2003101228892A CN 200310122889 A CN200310122889 A CN 200310122889A CN 1315154 C CN1315154 C CN 1315154C
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Abstract
The present invention relates to a method of recycling control wafers, which comprises the following steps: a SiN film is deposited on a control wafer; a control wafer coated with a film is dipped in mixed solution to remove the coated film; the mixed solution comprises HF, HNO3, DIW (deionized water), wherein the mixed solution has the components that HF: HNO3: DIW (deionized water) is equal to 1: 6: 4; the mixed solution comprises 49% of HF and 70% of HNO3; the control wafer is dipped for four minutes under the condition of 200% of over etching, and is dipped at the room temperature for operation. The present invention also relates to a control wafer structure for recycling control wafers, which comprises a substrate and a SiN film formed on the substrate, wherein a control wafer can be dipped in mixed solution to remove a coated film; the mixed solution comprises HF, HNO3, DIW (deionized water). The cost for recycling control wafers can be reduced by the method, and the speed can be increased.
Description
Technical field
The present invention and a kind of semiconductor fabrication, particularly a kind of by coating control sheet reclaiming (the reclaim control/dummy wafer) method of (pre-coated) silicon nitride (SiN) on wafer (wafer) in advance with and the control chip architecture.
Background technology
Semiconductor subassembly utilizes highdensity integrated circuit technique to have sizable progress.Utilize the exploitation of stepper, high-resolution little shadow (lithography) equipment and etching technique, make semiconductor more quicken evolution.Usually, the step of making integrated circuit includes the fabrication steps in hundreds of roads, therefore processing procedure process complexity not only, and how effectively group to appoint the workload of process work bench and job specification also be the work of a complexity with the utilization of promoting resource.In manufacture process, make bottleneck and often occur in the production capacity that has influence on processing procedure in many fabrication steps at any time, for example, processing procedure speed, capacity utilization, apparatus of load density or the like all are the factors that influences production capacity.
Multiple internal connecting lines (multi-level interconnection) also is one of structure important in the integrated circuit.By multiplex conductor connect make the transistor (transistor), capacitor (capcitor) and the resistance basic building blocks such as (resistor) that are configured in Semiconductor substrate (substrate) can electrical couplings (couple) to finish specific function.Aluminum metal contacts as electrical with the intraconnections that titanium is used for semiconductor technology at large, general aluminum or aluminum alloy is formed on the silicon film, and the contact-making surface of this aluminium-silicon, aluminium/silicon/copper (AlSiCu) alloy can be used to make the material of more low-resistance structure as intraconnections (interconnection).Utilize copper (Cu) to become possibility based on the exploitation of Progress in technique and CMP (chemical mechanical polishing) is feasible as intraconnections.Low and because of the impedance of copper to electromigration (electro-migration) patience height, so be that the Cu processing procedure of material develops and becomes important techniques in the deep-sub-micrometer with copper.The control sheet (control/dummywafer) that present copper metallization (Cu metallization) is adopted must use Ta/TaN as barrier layer (barrier layer).For reclaiming utilization control sheet (reclaim control/dummy wafer), the Ta/TaN barrier layer must be removed, and can cause the consume of silicon (Si) material in the removal process more usually.The main at present method that adopts two kinds of reclaiming utilization control sheets, a kind of is to adopt sulfuric acid solution mixing hydrofluoric acid solution to remove above-mentioned metal level, however it needs higher temperature and etch-rate slow.Another kind of mode is to adopt chemical mechanical milling method, and just CMP (chemical mechanical polishing) removes metal level, and then utilizes hydrofluoric acid solution to remove silicon dioxide.But the cost of the method is too high.
Therefore at present be badly in need of a kind of method that can reclaiming utilization control sheet (reclaim control/dummy wafer).
Summary of the invention
Main purpose of the present invention provide a kind of by coating control sheet reclaiming (the reclaim control/dummy wafer) method of (pre-coated) silicon nitride (SiN) on wafer (wafer) in advance with and the control chip architecture.
A further object of the present invention is to provide a kind of control sheet reclaiming method that is applicable to copper wiring.
A kind of method of reclaiming utilization control sheet comprises: deposit a silicon nitride film (SiN film) on the control sheet; And the control sheet of coating film is soaked in the film that is beneficial to remove above-mentioned coating in the mixed solution, this mixed solution comprises HF, HNO
3, DIW (deionized water).Wherein above-mentioned mixed solution composition is HF: HNO
3: DIW (deionized water)=1: 6: 4, the HF concentration of mixed solution is 49%, HNO
3Concentration is 70%.The control sheet is immersed in and soaked four minutes under the condition of 200% over etching and the control sheet is immersed in operation at room temperature.
The control chip architecture of reclaiming utilization control sheet of the present invention comprises a substrate and a silicon nitride film (SiN film) and is formed on the substrate; And this control sheet can be soaked in the film that is beneficial to remove coating in the mixed solution, and this mixed solution comprises HF, HNO
3, DIW (deionized water).
Adopt said method can reduce the cost that the control sheet is recycled, improve recovery speed, and safer.
Description of drawings
Fig. 1 is a flow chart of the present invention.
Embodiment
The present invention for provide a kind of by coating control sheet reclaiming (the reclaim control/dummy wafer) method of (pre-coated) silicon nitride (SiN) on wafer (wafer) in advance with and the control chip architecture.Method of the present invention and structure are applicable to the recovery and the regeneration of the control sheet of copper wiring, and the effect of this method is not only with low cost and safer.
Consult Fig. 1, as controlling sheet (control/dummy wafer) substrate as an example, in order to limit the present invention, at first step 100 does not deposit a silicon nitride film (SiN film) on above-mentioned control sheet with chemical vapour deposition technique in boiler tube with a monocrystalline silicon.Follow the use of control sheet to carry out the thin film deposition (200) of main processing procedure subsequently.The film control that to grow up be can monitor by traditional using method of control sheet, monitoring program depositing of thin film or growth are beneficial to.
Finish after the main process thin film deposition, the reclaiming of control sheet can be utilized (reclaimcontrol/dummy wafer) usually, to save the cost expenditure.The present invention is that the control sheet with the coating film is soaked in the film that is beneficial to remove above-mentioned coating in the mixed acid solution.The present invention can be suitable for following structure, it must be appreciated that following parameter and aspect only do an explanation and a reference, and is non-in order to limit this
Scope of invention.
| With reference to aspect | Reference configuration | Reference thickness (kA) |
| B and S | SiN/PE-oxide/TaN/Ta SiN/PE-oxide/TaN/Ta/Cu | 1.15/4/0.15/1.2 1.15/4/0.15/1.2/10 |
| ECP | SiN/PE-oxide/TaN/Fa/Cu | 1.15/4/0.15/1.2/20 |
| CMP | SiN/PE-oxide/TaN/Ta/Cu | 1.15/4/0.15/1.2/100 |
The removal method that control sheet of the present invention (control and dummy wafer) is gone up the major metal layer is that it is immersed in the acid solution that mixes (300), and this acid solution comprises HF, HNO
3, DIW, HF: HNO
3: DIW (deionized water)=1: 6: 4, HF and HNO
3Concentration is respectively HF49%, HNO
370%.Under the condition of 200% over etching, soaked four minutes.Operation at room temperature.Above-mentioned solution also can corrode the SiN material, and approximately positive 100 dusts and the 200 dust back sides can be used the control sheet safely at least five times according to method of the present invention.
Claims (6)
1. the method for a reclaiming utilization control sheet is characterized in that comprising:
Deposit a silicon nitride film on the control sheet; And
The control sheet of coating film is soaked in the film that is beneficial to remove above-mentioned coating in the mixed solution, and this mixed solution comprises HF, HNO
3, DIW;
Wherein said mixed solution composition is HF: HNO
3: DIW:1: 6: 4;
The HF concentration of described mixed solution is 49%;
The HNO of described mixed solution
3Concentration is 70%.
2. the method for reclaiming utilization control sheet as claimed in claim 1, wherein above-mentioned control sheet are immersed under the condition of 200% over etching soaked four minutes.
3. the method for reclaiming utilization control sheet as claimed in claim 1, wherein above-mentioned control sheet is immersed under the room temperature to be operated.
4. the mixed solution of a reclaiming utilization control sheet is used to control the sheet immersion and is beneficial to remove batch film that covers, and it is characterized in that composition comprises HF, HNO
3, DIW.
Wherein said mixed solution composition is HF: HNO
3: DIW=1: 6: 4;
The HF concentration of described mixed solution is 49%;
The HNO of described mixed solution
3Concentration is 70%.
5. the mixed solution of reclaiming utilization control sheet as claimed in claim 4, wherein above-mentioned control sheet are immersed under the condition of 200% over etching and soaked four minutes.
6. the mixed solution of reclaiming utilization control sheet as claimed in claim 4, wherein above-mentioned control sheet is immersed under the room temperature to be operated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101228892A CN1315154C (en) | 2003-12-25 | 2003-12-25 | Control wafer recovery and regenerating method and control wafer structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101228892A CN1315154C (en) | 2003-12-25 | 2003-12-25 | Control wafer recovery and regenerating method and control wafer structure thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1632910A CN1632910A (en) | 2005-06-29 |
| CN1315154C true CN1315154C (en) | 2007-05-09 |
Family
ID=34844663
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101228892A Expired - Fee Related CN1315154C (en) | 2003-12-25 | 2003-12-25 | Control wafer recovery and regenerating method and control wafer structure thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1315154C (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102456543A (en) * | 2010-10-21 | 2012-05-16 | 上海华虹Nec电子有限公司 | Negative film recycling method applied to batch treatment ion implanter |
| CN104779135A (en) * | 2014-01-10 | 2015-07-15 | 上海华虹宏力半导体制造有限公司 | Method of eliminating influences of control wafer during batch polysilicon deposition process |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679212A (en) * | 1993-05-27 | 1997-10-21 | Shin-Etsu Handotai Co., Ltd. | Method for production of silicon wafer and apparatus therefor |
| CN1412820A (en) * | 2002-11-25 | 2003-04-23 | 中芯国际集成电路制造(上海)有限公司 | Method for recovering ion injection doping dose monitoring sheet |
| US6639312B2 (en) * | 2001-11-07 | 2003-10-28 | Matrix Semiconductor, Inc | Dummy wafers and methods for making the same |
| JP2003332292A (en) * | 2002-03-04 | 2003-11-21 | Toshiba Ceramics Co Ltd | Purifying method for silicon product |
-
2003
- 2003-12-25 CN CNB2003101228892A patent/CN1315154C/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5679212A (en) * | 1993-05-27 | 1997-10-21 | Shin-Etsu Handotai Co., Ltd. | Method for production of silicon wafer and apparatus therefor |
| US6639312B2 (en) * | 2001-11-07 | 2003-10-28 | Matrix Semiconductor, Inc | Dummy wafers and methods for making the same |
| JP2003332292A (en) * | 2002-03-04 | 2003-11-21 | Toshiba Ceramics Co Ltd | Purifying method for silicon product |
| CN1412820A (en) * | 2002-11-25 | 2003-04-23 | 中芯国际集成电路制造(上海)有限公司 | Method for recovering ion injection doping dose monitoring sheet |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1632910A (en) | 2005-06-29 |
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Owner name: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING Effective date: 20111123 |
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Effective date of registration: 20111123 Address after: 201203 No. 18 Zhangjiang Road, Shanghai Co-patentee after: Semiconductor Manufacturing International (Beijing) Corporation Patentee after: Semiconductor Manufacturing International (Shanghai) Corporation Address before: 201203 Shanghai Zhangjiang Road, Zhangjiang High Tech Park of Pudong New Area No. 18 Patentee before: Semiconductor Manufacturing International (Shanghai) Corporation |
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Granted publication date: 20070509 Termination date: 20181225 |
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