CN1630184A - High frequency oscillator - Google Patents
High frequency oscillator Download PDFInfo
- Publication number
- CN1630184A CN1630184A CNA2004100859435A CN200410085943A CN1630184A CN 1630184 A CN1630184 A CN 1630184A CN A2004100859435 A CNA2004100859435 A CN A2004100859435A CN 200410085943 A CN200410085943 A CN 200410085943A CN 1630184 A CN1630184 A CN 1630184A
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- Prior art keywords
- electrode
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- voltage
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
- H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
- H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
- H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
- H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
- H03B2201/02—Varying the frequency of the oscillations by electronic means
- H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Provided is a high-frequency oscillator having a stable oscillation frequency with an excellent C/N characteristic. On the surface of a dielectric substrate 1, a plurality of lands on which IC chips 2 are mounted are formed in an array, and also a resonator electrode pattern 11 is formed. Further, on the rear face of the dielectric substrate 1, a grounding electrode 16 is formed on the substantially entire face. One end of the resonator electrode pattern 11 is connected to a land on which a resonator connection terminal (Res terminal) of the IC chip 2 is mounted. The other end of the resonator electrode pattern 11 is connected to a land on which a grounding terminal (GND1 terminal) of an oscillating transistor in the IC chip 2 is mounted. The land which the GND1 terminal is mounted on, and also the resonator electrode pattern is connected to, conducts to the grounding electrode 16 formed on the rear face, through a wiring electrode pattern 14 and a through hole 15.
Description
Technical field
The present invention relates to a kind of high-frequency generator of high-frequency signal of the regulation of vibrating, particularly a kind of major part of oscillating circuit forms the high-frequency generator that the resonator with the conducting of IC chip forms by the IC chipization and on the substrate of this IC chip of assembling.
Background technology
In the past, high-frequency generator, voltage-controlled oscillator for example is by by the resonator of the assigned frequency resonance by the control voltage decision that adds be connected the oscillating circuit that signal oscillating on this resonator, that amplify above-mentioned resonance frequency goes out and constitute.As the voltage-controlled oscillator of formation like this, have the circuit shown in the patent documentation 1 and constitute.
Structure as realizing that this circuit constitutes shown in patent documentation 2, has internal layer electrode or top and bottom electrode by multilager base plate to form the resonator electrode figure, simultaneously, carries the structure of each assembling parts that constitutes oscillating circuit on this substrate.In addition, shown in patent documentation 3, make resonator oscillating circuit IC chipization in addition in addition, on the substrate of this IC chip of assembling, form the structure of resonator electrode figure.
Below, with reference to Fig. 7, Fig. 8, illustrate to make so routine voltage-controlled oscillator of the resonator part IC chipization in addition of oscillator.
Fig. 7 is an oblique view of representing the summary formation of voltage-controlled oscillator in the past, (a) is the oblique view from IC chip assembling face one side, (b) is the oblique view from subtend face one side of (a).
In addition, Fig. 8 (a) is the vertical view of voltage-controlled oscillator shown in Figure 7, and Fig. 8 (b) is the upward view of this substrate.
In addition, below, for the purpose of simplifying the description, the face shown in Fig. 8 (a) is called the surface, the face shown in Fig. 8 (b) is called the back side.
As Fig. 7, shown in Figure 8, on the surface of dielectric substrate 1, form a plurality of island portion assembled IC chip 2, form the resonator electrode figure 11 of the regulation shape that constitutes by micro strip lines simultaneously.Resonator electrode figure 11, one ends from the surface via the electrode of side (the left inner face of Fig. 7 (a)), with grounding electrode 16 conductings at the back side, the other end and the island portion conducting that is assembled with the resonator splicing ear (Res terminal) of IC chip.In addition, on the surface of dielectric substrate 1, form grounding electrode figure 13, one ends from the electrode of this face via side (the right front face of Fig. 7 (a)), with grounding electrode 16 conductings at the back side, the island portion conducting of the splicing ear (GND2 terminal) of the other end and assembling IC chip 2.In addition, the middle part of resonator electrode figure 11 is by wiring electrode pattern 12, with the island portion conducting of the emitter splicing ear (Emi terminal) of the oscillation-use transistor of having assembled IC chip 2.In addition, the island portion of the oscillation-use transistor earth terminal (GND1 terminal) of assembling IC chip 2 is situated between by electrode pattern 14 and the through hole 15 with electric conductor, with connection electrode 16 conductings of quilt cover.
In addition, on the face (surface) of the IC chip 2 of assembling dielectric substrate 1, setting comprises IC chip 2 ground and covers roughly comprehensively metal shell 3.
Patent documentation 1: the spy opens flat 11-74727 communique
Patent documentation 2: the spy opens the 2000-307345 communique
Patent documentation 3: the spy opens flat 8-293728 communique
In the voltage-controlled oscillator that so constitutes, constitute circuit shown in Figure 9.
Fig. 9 is the equivalent circuit figure of voltage-controlled oscillator shown in Figure 7.
In Fig. 7, structure shown in Figure 8, because voltage-controlled oscillator is the ground connection by near the electrode the side (the right inner face of Fig. 7) of dielectric substrate 1 basically, therefore, as shown in Figure 9, between an end of emitter side earth terminal (GND1 terminal) the resonator electrode pattern 11 (L1) of the oscillation-use transistor Tr1 of IC chip 2, the inductance L that is connected in series and forms by wiring electrode pattern 14
P, the inductance L that forms by through hole 15
TH, the inductance L that forms by the grounding electrode 16 at the back side
G
This voltage-controlled oscillator, it is the oscillator of the Colpitts type that constitutes by oscillation-use transistor Tr1, capacitor C3, C6 resonator L1, but in above-mentioned structure, between the collector-base of transistor Tr 1, promptly in the L portion of Colpitts type oscillator, connect by resonator L1 and inductance L
P, L
TH, L
GThe combination inductance that is connected in series and forms.
, be used for the trend that IC chip of voltage-controlled oscillator so has miniaturization, if but make the miniaturization of IC chip, the tendency that each terminal intervals shortens, the width of wiring electrode pattern also narrows down is then arranged.Therefore, increase above-mentioned inductance L
PValue.In addition, because through hole 15 forms inductance L by conductor
THAlso have value to a certain degree, and the connection electrode 16 that is located at the back side has bigger area, but because the distance of the earth point of the essence from through hole 15 to end face, so inductance L
GAlso has value to a certain degree.
Here, because these inductance are subjected to the restriction of shape to a certain degree, so be difficult to the value of above-mentioned inductance is controlled at setting on the formation of the profile of oscillator or circuitous pattern.Therefore, be difficult to make the L composition of Colpitts type oscillator constant, become the reason of frequency of oscillation deviation.
In addition, owing to form the part wiring electrode pattern of oscillator towards ground, the back side from the surface of substrate, so the wiring figure prolongation, produce the conductor damage, the C/N characteristic of deterioration oscillator signal.
And, because rear side is assembled near the module group substrates ground of assembling voltage-controlled oscillator, so, produce electric coupling by grounding electrode and the electrode that is formed on the module group substrates, after the constant of Colpitts type oscillator changes, the possibility that has frequency of oscillation to change.In addition, pass to the grounding electrode at the back side, the possibility of influential oscillator signal from the noise (noise) of module group substrates.
Summary of the invention
For this reason, the purpose of this invention is to provide a kind of high-frequency generator with stable frequency of oscillation, good C/N characteristic, it adopts and is being formed with on the substrate of resonator electrode the formation that IC chip that assembling has oscillator function forms, and this IC chip has the part except that resonator.
The present invention, have: be assembled on the assembling substrates and comprise high-frequency oscillating circuits the part except that resonator portion the IC chip and be formed on resonator electrode on the assembling substrates, make resonator electrode and the conducting of IC chip, in the high-frequency generator that so forms, it is characterized in that: an end of resonator electrode is connected on the resonator splicing ear of IC chip, the other end directly is connected the oscillating circuit of IC chip with on the earth terminal.
In this constituted, an end of resonator was used earth terminal ground connection via the oscillating circuit of IC chip.Here, so-called oscillating circuit earth terminal is the terminal of earth point ground connection that makes the high frequency of oscillating circuit.Therefore, because resonator directly is connected on the oscillating circuit,, form the inductance between resonator and the ground connection simultaneously so oscillating circuit forms inductance between oscillating circuit and the ground connection with the electrode between earth terminal and the ground connection.As a result, in the high-frequency signal transfer path that constitutes by resonator and oscillating circuit (the L portion of Colpitts type oscillator), do not insert these unsettled inductance.In addition, the distance between the resonator splicing ear of resonator and IC chip shortens, and the damage of conductor reduces.
In addition, the present invention is characterized in that: assembling substrates is made of the multilayer board of the internal electrode with the multilayer of forming, and is formed at least a portion of resonator electrode by internal electrode.
In this constitutes,, can reduce the surface area of assembling substrates by in assembling substrates, forming resonator electrode.
If employing the present invention, owing in the high-frequency signal transfer path that the oscillating circuit by resonator and IC chip constitutes, do not insert and be located at unsettled inductance or the pattern electrodes resistance that the pattern electrodes on the assembling substrates forms, thus can form have stable frequency of oscillation, the good high-frequency generator of oscillating characteristic of good C/N characteristic.
In addition, if adopt the present invention, have stable frequency of oscillation by making stratification in the resonator electrode, can making, the high-frequency generator miniaturization of good C/N characteristic.
Description of drawings
Fig. 1 is the oblique view that the summary of the voltage-controlled oscillator of expression the 1st execution mode constitutes.
Fig. 2 is the vertical view and the upward view of the substrate of voltage-controlled oscillator shown in Figure 1.
Fig. 3 is the equivalent circuit figure of voltage-controlled oscillator shown in Figure 1.
Fig. 4 is the oblique view that the summary of the voltage-controlled oscillator of expression the 2nd execution mode constitutes.
Fig. 5 is the vertical view of the substrate of voltage-controlled oscillator shown in Figure 4.
Fig. 6 is the equivalent circuit figure of voltage-controlled oscillator shown in Figure 4.
Fig. 7 is an oblique view of representing the summary formation of voltage-controlled oscillator in the past.
Fig. 8 is the vertical view and the upward view of the substrate of voltage-controlled oscillator shown in Figure 7.
Fig. 9 is the equivalent circuit figure of voltage-controlled oscillator shown in Figure 7.
Among the figure: 1-dielectric substrate, 2-IC chip, 3-metal shell, the 4-resistive element, 11-resonator electrode, the 12-electrode pattern that connects up, 13-grounding electrode figure, the 14-electrode pattern that connects up, the 15-through hole, 16-grounding electrode, 101-control voltage signal input electrode, 102-drive voltage signal input electrode, 103-oscillator signal output electrode.
Embodiment
Below, with reference to Fig. 1～Fig. 3, the high-frequency generator of the 1st execution mode of the present invention is described.In addition, in the present embodiment, as an example of high-frequency generator, account for voltage control generator.
Fig. 1 is the oblique view that the summary of the voltage-controlled oscillator of expression present embodiment constitutes, and (a) is the oblique view from IC chip assembling face one side, (b) is the oblique view from subtend face one side of (a).
In addition, Fig. 2 (a) is the vertical view of the substrate of voltage-controlled oscillator shown in Figure 1, and Fig. 2 (b) is the upward view of this substrate.
In addition, Fig. 3 is the equivalent circuit figure of the voltage-controlled oscillator of present embodiment.
In addition, below, for the purpose of simplifying the description, the face shown in Fig. 2 (a) is called the surface of dielectric substrate 1, the face shown in Fig. 2 (b) is called the back side of dielectric substrate 1.
As shown in Figure 1 and Figure 2, form electrode, arrange a plurality of island portion that is formed for assembling IC chip 2 from the teeth outwards, roughly form grounding electrode 16 overleaf all sidedly on the surface of dielectric substrate 1 and the back side.
At IC chip 2, as shown below, there are a plurality of terminals be assembled in respectively in the portion of above-mentioned a plurality of island.Specifically have: control voltage signal input terminal is that Vc terminal, drive voltage signal input terminal are that Vb terminal, resonator splicing ear are that the emitter splicing ear of Res terminal, oscillation-use transistor is that the earth terminal of Emi terminal, oscillation-use transistor is the GND1 terminal, is that GND2 terminal, oscillator signal lead-out terminal are the OUT terminal via the earth terminal as the capacitor of the Vb terminal of drive voltage signal input terminal.Here, because the GND1 terminal is via capacitor, with the earth terminal of the collector electrode high frequency earthing of oscillation-use transistor, so be equivalent to " oscillating circuit earth terminal " of the present invention.
In addition, on the surface of dielectric substrate 1, form resonator electrode figure 11 by micro strip lines, the Res terminal in one end and the above-mentioned a plurality of island portion is with the conducting of island portion, the other end and the conducting of GND1 terminal usefulness island portion.In addition, on the surface of dielectric substrate 1, form the INTRM intermediate point that makes resonator electrode figure 11 and Emi terminal wiring electrode pattern 12 with the conducting of island portion by micro strip lines.
In addition, the GND1 of dielectric substrate 1 terminal with island portion near, form connect dielectric substrate 1 and to inner filling the through hole 15 of electric conductor, GND1 terminal island portion, Jie is by the wiring electrode pattern 14 and the through hole 15 of micro strip lines, with grounding electrode 16 conductings at the back side.
In addition, dielectric substrate 1 relatively to 2 end faces (right front and left back face among Fig. 1 (a)) of regulation circular-arc notch part is set, side at this circular-arc notch part forms electrode, also forms electrode with the above-mentioned notch part periphery of this electrode conduction ground on the surface of dielectric substrate 1.And, grounding electrode 16 conductings at these electrodes and the back side.Here, on the surface of dielectric substrate 1, form and to make the GND2 terminal with the grounding electrode figure 13 of island portion with the electrode conduction that is formed on above-mentioned circular-arc notch part periphery.
In addition, on 3 angles in 4 angles of dielectric substrate 1, form control voltage signal input electrode 101, drive voltage signal input electrode 102 and oscillator signal output electrode 103, remaining bight forms the NC terminal.
The emitter of oscillation-use transistor Tr1 is connected on the Emi terminal, is connected on the GND1 terminal via capacitor C6 simultaneously via resistive element R4.In addition, the emitter of oscillation-use transistor Tr1 is connected buffering with on the base stage of transistor Tr 2 via capacitor C4.In addition, between the emitter of oscillation-use transistor Tr1 and base stage, connect feedback electricity consumption container C 3.
The collector electrode of oscillation-use transistor Tr1 and buffering, are connected on the GND1 terminal via capacitor C5 with the emitter of transistor Tr 2.
The buffering collector electrode of transistor Tr 2, via inductance L 2, being connected the drive voltage signal input terminal is on the Vb terminal, simultaneously via capacitor C7, being connected the oscillator signal lead-out terminal is on the OUT terminal.
The Vb terminal via capacitor C8, is connected on the GND2 terminal.In addition, resistive element R1, R2, R3 are connected in series between Vb terminal and GND1 terminal, the tie point of this resistive element R1, R2 is connected buffering with on the base stage of transistor Tr 2, and the tie point of resistive element R2, R3 is connected on the base stage of oscillation-use transistor Tr1.
Constitute by forming so, can form voltage-controlled oscillator, and this voltage-controlled oscillator is that the IC chip 2 that will have the oscillating circuit except that resonator portion is assembled on the dielectric substrate 1 that is formed with resonator electrode figure 11 and forms.And, this voltage-controlled oscillator, as shown in Figure 3, owing between emitter-base stage of oscillation-use transistor Tr1, connect capacitor C3, between emitter-collector electrode, connect capacitor C6, between base stage-collector electrode, connect resonator L1, so can constitute the oscillator of Colpitts type.In addition, about capacitor C5,, omit the explanation of annexation owing to form the low-down state of impedance in fact.
In the voltage-controlled oscillator that assembling so constitutes on the module group substrates that is forming other functional circuits, on the grounding electrode of this module group substrates, engage the side of dielectric substrate 1 and the electrode at the back side, guarantee the earthing potential of voltage-controlled oscillator with slicken solder.In addition, by above-mentioned Vb terminal, Vc terminal, OUT terminal with voltage-controlled oscillator, electricity is bonded in the island portion of the above-mentioned terminal of assembling of module group substrates, supply with drive voltage signal and control voltage signal to voltage-controlled oscillator, by resonator and oscillating circuit, the oscillator signal of output assigned frequency.
Constitute by forming so, as previously mentioned, since by with the GND1 terminal of the emitter of oscillation-use transistor Tr1 and earth-continuity with island portion on, directly be connected an end of resonator electrode figure 11, so the inductance L that insertion is formed by the grounding electrode 16 at wiring electrode pattern 14, through hole 15 and the back side on the surface of dielectric substrate 1 between base stage-collector electrode of the oscillation-use transistor Tr1 of the oscillator that constitutes the Colpitts type not
P, L
TH, L
G, therefore be not subjected to the influence of these inductance, can constitute voltage-controlled oscillator with desired frequency of oscillation stable oscillation stationary vibration.In addition, owing to unlike routine in the past, be situated between, connect between aforementioned base-collector electrode by the long path that constitutes by electrode pattern, through hole and grounding electrode, so can suppress the generation of the conductor damage that these electrodes cause, can constitute the voltage-controlled oscillator of C/N characteristic good.
In addition, constitute by forming so, even noise is from the grounding electrode transmission of module group substrates to the dielectric substrate back, noise also transmits to the dielectric substrate surface that forms oscillating circuit and resonator electrode hardly, can constitute the voltage-controlled oscillator with stable oscillating characteristic.
In addition, as shown in Figure 1, in the voltage-controlled oscillator of present embodiment,, metal shell 3 is set in order to cover this surface and IC chip 2 in the face side of the dielectric substrate 1 of having assembled the IC chip.Because the electrode conduction on this metal shell 3 and the side that is formed on above-mentioned dielectric substrate 1, be subjected to influence from the signal of external circuit so can suppress to be formed on voltage-controlled oscillator on the dielectric substrate 1.Thus, can constitute the better voltage-controlled oscillator of oscillating characteristic.
Below, with reference to Fig. 4～Fig. 6, the voltage-controlled oscillator of the 2nd execution mode is described.
Fig. 4 is the oblique view that the summary of the voltage-controlled oscillator of expression the 2nd execution mode constitutes.In addition, Fig. 5 is the vertical view of the substrate of voltage-controlled oscillator shown in Figure 1.In addition, Fig. 6 is the equivalent circuit figure of the voltage-controlled oscillator of present embodiment.
Fig. 4, voltage-controlled oscillator shown in Figure 5 are that the INTRM intermediate point of the wiring electrode pattern 12 of the voltage-controlled oscillator shown in Fig. 1, Fig. 2 inserts resistive element 4, and other formation and Fig. 1, voltage-controlled oscillator shown in Figure 2 are identical.On equivalent circuit figure, resistive element 4 is set at R5, if represent it with equivalent circuit figure, then is equivalent circuit figure shown in Figure 6.Shown in the equivalent circuit figure of Fig. 6, the voltage-controlled oscillator of present embodiment, between the INTRM intermediate point of the emitter resonator L1 of oscillation-use transistor Tr1, be connected in series resistive element R4 and resistive element R5, other formation is identical with the voltage-controlled oscillator shown in the 1st execution mode.Here, because resistive element R5 is not formed in the IC chip 2, but be assembled in the surface of dielectric substrate 1, so, can be adjusted at the electric current that oscillating circuit flows by changing the resistance value of this resistive element R5.
Therefore, constitute, can enough a kind of vibrations obtain multiple current sinking amount or output level with the IC chip by forming so.That is, can obtain the multiple voltage control generator by enough a kind of IC chips.
In addition, in the respective embodiments described above, form resonator electrode on the surface of dielectric substrate, but also can adopt multilayer dielectric substrate, form resonator electrode by internal layer electrode.Constitute by forming so, can on the dielectric substrate surface, assemble the IC chip, form resonator electrode, the shape that can dwindle voltage-controlled oscillator in its lower floor (internal layer).
In addition, in the respective embodiments described above, for example understand voltage-controlled oscillator, but so long as by resonator with have a high-frequency generator that the oscillating circuit IC chip that is made of the part beyond this resonator is formed, just above-mentioned formation can be adopted, just above-mentioned effect can be accessed.
Claims (2)
1. high-frequency generator, have: be assembled on the assembling substrates and possess high-frequency oscillating circuits the part except that resonator portion the IC chip and be formed on resonator electrode on the above-mentioned assembling substrates, and make above-mentioned resonator electrode and the conducting of above-mentioned IC chip, it is characterized in that:
Above-mentioned resonator electrode, an end are connected on the resonator splicing ear of above-mentioned IC chip, the other end directly is connected the oscillating circuit of above-mentioned IC chip with on the earth terminal.
2. high-frequency generator as claimed in claim 1, wherein: above-mentioned assembling substrates is made of the multilayer board of the internal electrode with the multilayer of forming, and at least a portion of above-mentioned resonator electrode is above-mentioned internal electrode.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003422873 | 2003-12-19 | ||
| JP2003422873A JP4678127B2 (en) | 2003-12-19 | 2003-12-19 | High frequency oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1630184A true CN1630184A (en) | 2005-06-22 |
| CN100495905C CN100495905C (en) | 2009-06-03 |
Family
ID=34783605
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2004100859435A Active CN100495905C (en) | 2003-12-19 | 2004-10-25 | High frequency oscillator |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP4678127B2 (en) |
| KR (1) | KR100625455B1 (en) |
| CN (1) | CN100495905C (en) |
| TW (1) | TW200522503A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102098046A (en) * | 2010-12-02 | 2011-06-15 | 苏州云芯微电子科技有限公司 | Common-mode controlled inductance-capacitance voltage-controlled oscillator |
| CN102355225A (en) * | 2011-08-02 | 2012-02-15 | 台晶(宁波)电子有限公司 | Low-temperature co-fired ceramic entire flat substrate pedestal for quartz crystal resonator |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5814542B2 (en) * | 2010-12-06 | 2015-11-17 | 株式会社東芝 | Oscillator circuit |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05259720A (en) * | 1992-03-12 | 1993-10-08 | Ngk Insulators Ltd | Printed circuit board incorporated with microwave resonator |
| JP3876552B2 (en) * | 1998-10-01 | 2007-01-31 | セイコーエプソン株式会社 | SAW oscillator |
| JP2000216485A (en) * | 1999-01-25 | 2000-08-04 | Sanyo Electric Co Ltd | Semiconductor device |
| JP2000312113A (en) * | 1999-04-27 | 2000-11-07 | Matsushita Electric Ind Co Ltd | Oscillator |
| JP2001244741A (en) * | 2000-02-29 | 2001-09-07 | Matsushita Electric Ind Co Ltd | Voltage-controlled oscillator |
-
2003
- 2003-12-19 JP JP2003422873A patent/JP4678127B2/en not_active Expired - Lifetime
-
2004
- 2004-09-20 TW TW093128367A patent/TW200522503A/en unknown
- 2004-10-25 CN CNB2004100859435A patent/CN100495905C/en active Active
- 2004-12-17 KR KR1020040107944A patent/KR100625455B1/en active IP Right Grant
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102098046A (en) * | 2010-12-02 | 2011-06-15 | 苏州云芯微电子科技有限公司 | Common-mode controlled inductance-capacitance voltage-controlled oscillator |
| CN102098046B (en) * | 2010-12-02 | 2012-08-01 | 李云初 | Common-mode controlled inductance-capacitance voltage-controlled oscillator |
| CN102355225A (en) * | 2011-08-02 | 2012-02-15 | 台晶(宁波)电子有限公司 | Low-temperature co-fired ceramic entire flat substrate pedestal for quartz crystal resonator |
| CN102355225B (en) * | 2011-08-02 | 2014-07-02 | 台晶(宁波)电子有限公司 | Low-temperature co-fired ceramic entire flat substrate pedestal for quartz crystal resonator |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4678127B2 (en) | 2011-04-27 |
| KR20050062434A (en) | 2005-06-23 |
| TW200522503A (en) | 2005-07-01 |
| TWI318045B (en) | 2009-12-01 |
| CN100495905C (en) | 2009-06-03 |
| KR100625455B1 (en) | 2006-09-18 |
| JP2005184502A (en) | 2005-07-07 |
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