JP4678127B2 - High frequency oscillator - Google Patents

High frequency oscillator Download PDF

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JP4678127B2
JP4678127B2 JP2003422873A JP2003422873A JP4678127B2 JP 4678127 B2 JP4678127 B2 JP 4678127B2 JP 2003422873 A JP2003422873 A JP 2003422873A JP 2003422873 A JP2003422873 A JP 2003422873A JP 4678127 B2 JP4678127 B2 JP 4678127B2
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terminal
oscillation
resonator
land
electrode
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JP2005184502A (en
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俊夫 秦
文俊 佐藤
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Murata Manufacturing Co Ltd
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Murata Manufacturing Co Ltd
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Priority to KR1020040107944A priority patent/KR100625455B1/en
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
    • H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
    • H03B5/1237—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator
    • H03B5/124—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance
    • H03B5/1243—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device comprising means for varying the frequency of the generator the means comprising a voltage dependent capacitance the means comprising voltage variable capacitance diodes
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
    • H03B5/18—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance
    • H03B5/1841—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator
    • H03B5/1847—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising distributed inductance and capacitance the frequency-determining element being a strip line resonator the active element in the amplifier being a semiconductor device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B2201/00—Aspects of oscillators relating to varying the frequency of the oscillations
    • H03B2201/02—Varying the frequency of the oscillations by electronic means
    • H03B2201/0208—Varying the frequency of the oscillations by electronic means the means being an element with a variable capacitance, e.g. capacitance diode

Description

この発明は、所定の高周波信号を発振する高周波発振器、特に、発振回路の主要部がＩＣチップ化され、該ＩＣチップが実装された基板にＩＣチップに導通する共振器が形成されてなる高周波発振器に関するものである。   The present invention relates to a high-frequency oscillator that oscillates a predetermined high-frequency signal, and in particular, a high-frequency oscillator in which a main part of an oscillation circuit is formed as an IC chip and a resonator that is connected to the IC chip is formed on a substrate on which the IC chip is mounted. It is about.

従来、高周波発振器、例えば電圧制御発振器は、印加されるコントロール電圧により決定される所定周波数で共振させるための共振器と、この共振器に接続し、前記共振周波数の信号を増幅して発振する発振回路とからなる。このような構成の電圧制御発振器としては特許文献１に示すような回路構成のものがある。   Conventionally, a high-frequency oscillator, for example, a voltage-controlled oscillator, is a resonator that resonates at a predetermined frequency determined by an applied control voltage, and an oscillation that oscillates by amplifying a signal of the resonance frequency connected to the resonator Circuit. As a voltage controlled oscillator having such a configuration, there is a circuit configuration as shown in Patent Document 1.

この回路構成を実現する構造としては、特許文献２に示すように、多層基板の内層電極や上下面電極で共振器電極パターンを形成するとともに、この基板上に発振回路を構成する各実装部品を搭載しているものがある。また、特許文献３に示すように、共振器以外の発振回路をＩＣチップ化し、このＩＣチップが実装される基板に共振器電極パターンを形成する構造もある。   As a structure for realizing this circuit configuration, as shown in Patent Document 2, a resonator electrode pattern is formed by inner layer electrodes and upper and lower surface electrodes of a multilayer substrate, and each mounting component constituting an oscillation circuit is formed on this substrate. Some are equipped. Further, as shown in Patent Document 3, there is a structure in which an oscillation circuit other than a resonator is formed as an IC chip, and a resonator electrode pattern is formed on a substrate on which the IC chip is mounted.

このような発振器の共振器を除く部分をＩＣチップ化した電圧制御発振器の一例を図７、図８を参照して説明する。
図７は従来の電圧制御発振器の概略構成を示す斜視図であり、（ａ）はＩＣチップ実装面側からの斜視図、（ｂ）は（ａ）の対向面側からの斜視図である。
また、図８（ａ）は図７に示す電圧制御発振器の基板の上面図であり、図８（ｂ）はこの基板の下面図である。
なお、以下では説明を簡単にするため、図８（ａ）に示す面を表面、図８（ｂ）に示す面を裏面と称す。 An example of such a voltage controlled oscillator in which the part other than the resonator of the oscillator is formed as an IC chip will be described with reference to FIGS.
7A and 7B are perspective views showing a schematic configuration of a conventional voltage controlled oscillator, wherein FIG. 7A is a perspective view from the IC chip mounting surface side, and FIG. 7B is a perspective view from the facing surface side of FIG.
8A is a top view of the substrate of the voltage controlled oscillator shown in FIG. 7, and FIG. 8B is a bottom view of this substrate.
In the following, for simplicity of explanation, the surface shown in FIG. 8A is referred to as the front surface, and the surface shown in FIG. 8B is referred to as the back surface.

図７、図８に示すように、誘電体基板１の表面にはＩＣチップ２が実装される複数のランドが形成されるとともに、マイクロストリップラインからなる所定形状の共振器電極パターン１１が形成されている。共振器電極パターン１１は、一方端が表面から側面（図７（ａ）の左奥面）の電極を介して裏面の接地電極１６に導通され、他方端がＩＣチップ２の共振器接続端子（Ｒｅｓ端子）が実装されるランドに導通されている。また、誘電体基板１の表面には接地電極パターン１３が形成されており一方端がこの面から側面（図７（ａ）の右手前面）の電極を介して裏面の接地電極１６に導通され、他方端がＩＣチップ２の接地端子（ＧＮＤ２端子）が実装されるランドに導通されている。また、共振器電極パターン１１の途中部は、配線電極パターン１２によりＩＣチップ２の発振用トランジスタのエミッタ接続端子（Ｅｍｉ端子）が実装されるランドに導通されている。さらに、ＩＣチップ２の発振用トランジスタ接地端子（ＧＮＤ１端子）が実装されるランドは電極パターン１４および導電体を備えたスルーホール１５を介して裏面の接地電極１６に導通されている。   As shown in FIGS. 7 and 8, a plurality of lands on which the IC chip 2 is mounted are formed on the surface of the dielectric substrate 1, and a resonator electrode pattern 11 having a predetermined shape including a microstrip line is formed. ing. The resonator electrode pattern 11 is electrically connected to the ground electrode 16 on the back surface through an electrode on one side from the surface to the side surface (the left back surface in FIG. 7A), and the other end is connected to the resonator connection terminal ( Res terminal) is conducted to the land where it is mounted. Further, a ground electrode pattern 13 is formed on the surface of the dielectric substrate 1, and one end thereof is electrically connected from this surface to the ground electrode 16 on the back surface through the electrode on the side surface (the right hand front surface in FIG. 7A). The other end is electrically connected to a land on which the ground terminal (GND2 terminal) of the IC chip 2 is mounted. Further, the midway portion of the resonator electrode pattern 11 is electrically connected to the land on which the emitter connection terminal (Emi terminal) of the oscillation transistor of the IC chip 2 is mounted by the wiring electrode pattern 12. Further, the land on which the oscillation transistor ground terminal (GND1 terminal) of the IC chip 2 is mounted is electrically connected to the ground electrode 16 on the back surface through the electrode pattern 14 and the through hole 15 having a conductor.

また、誘電体基板１のＩＣチップ２が実装される面（表面）には、ＩＣチップ２を含み略全面を覆う金属ケース３が設置されている。
特開平１１−７４７２７号公報 特開２０００−３０７３４５公報 特開平８−２９３７２８号公報 In addition, a metal case 3 including the IC chip 2 and covering substantially the entire surface is provided on the surface (front surface) of the dielectric substrate 1 on which the IC chip 2 is mounted.
JP-A-11-74727 JP 2000-307345 A JP-A-8-293728

このような構造の電圧制御発振器では、図９に示すような回路が構成される。
図９は図７に示す電圧制御発振器の等価回路図である。
図７、図８に示す構造では、電圧制御発振器は誘電体基板１の側面（図７の右奥面）付近の電極で実質的に接地するため、図９に示すように、ＩＣチップ２の発振用トランジスタＴｒ１のエミッタ側接地端子（ＧＮＤ１端子）と共振器電極パターン１１（Ｌ１）の一方端との間に、配線電極パターン１４によるインダクタＬP と、スルーホール１５によるインダクタＬTHと、裏面の接地電極１６によるインダクタＬG とが直列接続される構造となる。 In the voltage controlled oscillator having such a structure, a circuit as shown in FIG. 9 is configured.
FIG. 9 is an equivalent circuit diagram of the voltage controlled oscillator shown in FIG.
In the structure shown in FIGS. 7 and 8, since the voltage controlled oscillator is substantially grounded by the electrode near the side surface (the right rear surface in FIG. 7) of the dielectric substrate 1, as shown in FIG. between one end of the emitter side ground terminal of the oscillation transistor Tr1 (GND1 terminals) and the resonator electrode patterns 11 (L1), an inductor L P by the wiring electrode patterns 14, the inductor L TH by the through hole 15, the back surface a structure in which an inductor L G by the ground electrode 16 are connected in series.

この電圧制御発振器は、発振用トランジスタＴｒ１とコンデンサＣ３，Ｃ６と共振器Ｌ１とからなるコルピッツ型の発振器であるが、前述の構造では、トランジスタＴｒ１のコレクタ−ベース間、すなわちコルピッツ発振器のＬ部に、共振器Ｌ１とインダクタＬP ，ＬTH，ＬG との直列接続による合成インダクタが接続されることとなる。 This voltage-controlled oscillator is a Colpitts type oscillator composed of an oscillation transistor Tr1, capacitors C3 and C6, and a resonator L1. , so that the resonators L1 and the inductor L P, L TH, synthetic inductor due to the series connection of the L G is connected.

ところで、このような電圧制御発振器に用いられるＩＣチップは小型化される傾向にあるが、ＩＣチップが小型化されると各端子間隔が短くなり、配線電極パターンの幅も狭くなる傾向になる。このため、前述のインダクタＬP の値は大きくなる。また、スルーホール１５は導体で形成されているためインダクタＬTHも或る程度の値を有し、さらに、裏面に設けられた接地電極１６は比較的広い面積を備えるが、スルーホール１５から端面の実質的な接地点までの距離が長いため、インダクタＬG も或る程度の値を有するようになる。 By the way, although the IC chip used for such a voltage controlled oscillator tends to be miniaturized, when the IC chip is miniaturized, the distance between the terminals is shortened and the width of the wiring electrode pattern tends to be narrowed. For this reason, the value of the aforementioned inductor L P becomes large. Further, since the through hole 15 is formed of a conductor, the inductor L TH also has a certain value, and the ground electrode 16 provided on the back surface has a relatively wide area. because the distance to the substantial ground point is long, the inductor L G also will have a value of some degree.

ここで、これらのインダクタは発振器の外形や回路パターンの構成上、或る程度の形状の制約を受けるので、前記インダクタの値を所定値に制御することが難しい。このため、コルピッツ発振器のＬ成分を一定にすることが難しく、発振周波数のバラツキの原因となっている。
また、基板の表面から裏面にかけて発振器の一部の配線パターンが形成されるので、配線パターンが長くなり導体損が生じてしまい、発振信号のＣ／Ｎ特性が劣化してしまう。 Here, since these inductors are restricted to a certain extent due to the external shape of the oscillator and the configuration of the circuit pattern, it is difficult to control the value of the inductor to a predetermined value. For this reason, it is difficult to keep the L component of the Colpitts oscillator constant, which causes variations in oscillation frequency.
In addition, since a part of the wiring pattern of the oscillator is formed from the front surface to the back surface of the substrate, the wiring pattern becomes long, conductor loss occurs, and the C / N characteristics of the oscillation signal deteriorate.

さらには、裏面側がこの電圧制御発振器を実装するモジュール基板に近接して実装されるので、接地電極とモジュール基板に形成された電極とにより電気的結合が生じ、コルピッツ発振器の定数が変化してしまい、発振周波数が変化する可能性がある。また、モジュール基板からのノイズが裏面の接地電極に伝搬されて発振信号に影響を及ぼす可能性がある。   Furthermore, since the back side is mounted close to the module substrate on which this voltage controlled oscillator is mounted, electrical coupling occurs between the ground electrode and the electrode formed on the module substrate, and the constant of the Colpitts oscillator changes. The oscillation frequency may change. In addition, noise from the module substrate may propagate to the ground electrode on the back surface and affect the oscillation signal.

このため、この発明の目的は、共振器電極を形成した基板上に、共振器を除く部分を備える発振器機能を有するＩＣチップを実装してなる構成を用いて、安定した発振周波数で優れたＣ／Ｎ特性を備える高周波発振器を提供することにある。   Therefore, an object of the present invention is to provide an excellent C with a stable oscillation frequency by using a configuration in which an IC chip having an oscillator function including a portion excluding a resonator is mounted on a substrate on which a resonator electrode is formed. The object is to provide a high-frequency oscillator having a / N characteristic.

この発明は、実装基板に実装され、少なくとも発振用トランジスタとバッファ用トランジスタとを備えたＩＣチップと、実装基板の表面に形成された発振周波数調整用の共振器電極とを備え、該共振器電極を前記ＩＣチップに導通させてなる高周波発振器において、ＩＣチップは、発振用トランジスタのベースにコンデンサを介して接続する共振器接続端子と、発振用トランジスタのエミッタにコンデンサを介して接続する発振回路用グランド端子と、発振用トランジスタのエミッタに第１の抵抗素子を介して接続する発振回路用エミッタ端子とを有し、実装基板は発振回路用グランド端子が接続されるランドと、共振器接続端子が接続されるランドと、発振回路用エミッタ端子が接続されるランドとを含む複数のランドを表面に有するとともに、発振回路用グランド端子が接続されるランドを起点として、該発振回路用グランド端子が接続されるランドと実装基板の端面との距離よりも短い位置に、スルーホールを有し、該スルーホールが実装基板の表面の発振回路用グランド端子が接続されるランドと実装基板の裏面に設けられたグランド電極とを電気的に接続し、実装基板の表面に形成される共振器電極は、一方端が共振器接続端子が接続されるランドに接続され、他方端が発振回路用グランド端子が接続されるランドに直接接続されるとともに、一方端と他方端との間の途中点が、実装基板に形成された分岐線路を介して、発振回路用エミッタ端子が接続されるランドへ接続されることを特徴としている。

The present invention includes an IC chip that is mounted on a mounting substrate and includes at least an oscillation transistor and a buffer transistor, and a resonator electrode for adjusting an oscillation frequency formed on the surface of the mounting substrate. In the high-frequency oscillator, the IC chip is connected to the base of the oscillation transistor via a capacitor, and the oscillation circuit is connected to the emitter of the oscillation transistor via a capacitor. An oscillation circuit emitter terminal connected to the emitter of the oscillation transistor via the first resistance element; the mounting substrate includes a land to which the oscillation circuit ground terminal is connected; and a resonator connection terminal. and lands are connected, to have a plurality of lands on a surface including a land emitter terminal oscillator circuit is connected DOO And a through hole at a position shorter than the distance between the land to which the oscillation circuit ground terminal is connected and the end face of the mounting board, starting from the land to which the oscillation circuit ground terminal is connected. Is electrically connected to the land connected to the ground terminal for the oscillation circuit on the surface of the mounting substrate and the ground electrode provided on the back surface of the mounting substrate, and the resonator electrode formed on the surface of the mounting substrate has one end Is connected to the land to which the resonator connection terminal is connected , the other end is directly connected to the land to which the ground terminal for the oscillation circuit is connected, and an intermediate point between one end and the other end is connected to the mounting substrate. It is characterized in that it is connected to a land to which the emitter terminal for an oscillation circuit is connected through the formed branch line.

この構成では、共振器の片端がＩＣチップの発振回路用グランド端子を介して接地される。ここで、発振回路用グランド端子とは発振回路の高周波的な接地点を接地するための端子である。このため、共振器が発振回路に直接接続されるので、発振回路用グランド端子と接地との間の電極が発振回路と接地との間のインダクタとなるとともに、共振器と接地との間のインダクタとなる。この結果、共振器と発振回路とからなる高周波信号伝送経路（コルピッツ型発振器のＬ部）にこれら不安定なインダクタが挿入されない。また、共振器とＩＣチップの共振器接続端子との間が短くなり、導体損が低下する。   In this configuration, one end of the resonator is grounded via the oscillation circuit ground terminal of the IC chip. Here, the oscillation circuit ground terminal is a terminal for grounding a high-frequency ground point of the oscillation circuit. For this reason, since the resonator is directly connected to the oscillation circuit, the electrode between the oscillation circuit ground terminal and the ground becomes an inductor between the oscillation circuit and the ground, and the inductor between the resonator and the ground. It becomes. As a result, these unstable inductors are not inserted into the high-frequency signal transmission path (the L portion of the Colpitts type oscillator) composed of the resonator and the oscillation circuit. Further, the gap between the resonator and the resonator connection terminal of the IC chip is shortened, and the conductor loss is reduced.

また、この発明は、実装基板が複数の層をなす内部電極を備える積層基板で構成され、共振器電極の少なくとも一部を内部電極で形成することを特徴としている。   Further, the present invention is characterized in that the mounting substrate is constituted by a laminated substrate including internal electrodes forming a plurality of layers, and at least a part of the resonator electrode is formed by the internal electrodes.

この構成では、共振器電極が実装基板内に形成されることにより、実装基板の表面積が小さくなる。   In this configuration, the resonator electrode is formed in the mounting substrate, thereby reducing the surface area of the mounting substrate.

この発明によれば、共振器とＩＣチップの発振回路とからなる高周波信号伝送経路に実装基板に設けられたパターン電極による不安定なインダクタやパターン電極抵抗が挿入されないので、安定した発振周波数で優れたＣ／Ｎ特性を備える優れた発振特性の高周波発振器を形成することができる。   According to the present invention, an unstable inductor or pattern electrode resistance due to the pattern electrode provided on the mounting substrate is not inserted into the high-frequency signal transmission path composed of the resonator and the oscillation circuit of the IC chip. In addition, it is possible to form a high-frequency oscillator having excellent oscillation characteristics and C / N characteristics.

また、この発明によれば、共振器電極を内層化することで、安定した発振周波数で優れたＣ／Ｎ特性を備える高周波発振器を小型に形成することができる。   Further, according to the present invention, by forming the resonator electrode as an inner layer, a high-frequency oscillator having excellent C / N characteristics at a stable oscillation frequency can be formed in a small size.

本発明の第１の実施形態に係る高周波発振器について図１〜図３を参照して説明する。なお、本実施形態では、高周波発振器の一例として電圧制御発振器について説明する。
図１は、本実施形態の電圧制御発振器の概略構成を示す斜視図であり、（ａ）はＩＣチップ実装面側からの斜視図、（ｂ）は（ａ）の対向面側からの斜視図である。
また、図２（ａ）は図１に示す電圧制御発振器の基板の上面図であり、図２（ｂ）はこの基板の下面図である。
また、図３は本実施形態の電圧制御発振器の等価回路図である。 A high-frequency oscillator according to a first embodiment of the present invention will be described with reference to FIGS. In the present embodiment, a voltage controlled oscillator will be described as an example of a high frequency oscillator.
1A and 1B are perspective views showing a schematic configuration of a voltage controlled oscillator according to the present embodiment, in which FIG. 1A is a perspective view from the IC chip mounting surface side, and FIG. 1B is a perspective view from the facing surface side of FIG. It is.
2A is a top view of the substrate of the voltage controlled oscillator shown in FIG. 1, and FIG. 2B is a bottom view of the substrate.
FIG. 3 is an equivalent circuit diagram of the voltage controlled oscillator of this embodiment.

なお、以下では説明を簡単にするため、図２（ａ）に示す面を誘電体基板１の表面、図２（ｂ）に示す面を誘電体基板１の裏面と称す。   In the following, for simplicity of explanation, the surface shown in FIG. 2A is referred to as the front surface of the dielectric substrate 1, and the surface shown in FIG.

図１、図２に示すように、誘電体基板１の表面と裏面とに電極が形成されており、表面にはＩＣチップ２が実装される複数のランドが配列形成され、裏面には略全面に接地電極１６が形成されている。   As shown in FIGS. 1 and 2, electrodes are formed on the front surface and the back surface of the dielectric substrate 1, and a plurality of lands on which the IC chip 2 is mounted are formed on the front surface. A ground electrode 16 is formed on the substrate.

ＩＣチップ２には、次に示すように前記複数のランドにそれぞれ実装される複数の端子が存在する。具体的には、コントロール電圧信号入力端子であるＶｃ端子、駆動電圧信号入力端子であるＶｂ端子、共振器接続端子であるＲｅｓ端子、発振用トランジスタのエミッタ接続端子であるＥｍｉ端子、発振用トランジスタの接地端子であるＧＮＤ１端子、駆動電圧信号入力端子であるＶｂ端子のコンデンサを介しての接地端子であるＧＮＤ２端子、発振信号出力端子であるＯＵＴ端子を備える。ここで、ＧＮＤ１端子は発振用トランジスタのコレクタをコンデンサを介して高周波的に接地するためのグランド端子であるので、本発明の「発振回路用グランド端子」に相当する。   The IC chip 2 has a plurality of terminals respectively mounted on the plurality of lands as shown below. Specifically, a control voltage signal input terminal Vc terminal, a drive voltage signal input terminal Vb terminal, a resonator connection terminal Res terminal, an oscillation transistor emitter connection terminal Emi terminal, and an oscillation transistor It has a GND1 terminal as a ground terminal, a GND2 terminal as a ground terminal through a capacitor of a Vb terminal as a drive voltage signal input terminal, and an OUT terminal as an oscillation signal output terminal. Here, since the GND1 terminal is a ground terminal for grounding the collector of the oscillation transistor at a high frequency via a capacitor, it corresponds to the “ground terminal for oscillation circuit” of the present invention.

また、誘電体基板１の表面には共振器電極パターン１１がマイクロストリップラインで形成されており、その一方端が前記複数のランドのうちのＲｅｓ端子用ランドに導通され、他方端がＧＮＤ１端子用ランドに導通されている。また、誘電体基板１の表面には共振器電極パターン１１の途中点とＥｍｉ端子用ランドとを導通させる配線電極パターン１２がマイクロストリップラインで形成されている。   A resonator electrode pattern 11 is formed by a microstrip line on the surface of the dielectric substrate 1, one end of which is electrically connected to the Res terminal land of the plurality of lands, and the other end of which is for the GND1 terminal. Conducted to the land. Further, a wiring electrode pattern 12 is formed on the surface of the dielectric substrate 1 by a microstrip line for electrically connecting the midpoint of the resonator electrode pattern 11 and the Emi terminal land.

また、誘電体基板１のＧＮＤ１端子用ランドの近傍には、誘電体基板１を貫通し内部に導電体が充填されたスルーホール１５が形成されており、ＧＮＤ１端子用ランドはマイクロストリップラインの配線電極パターン１４とスルーホール１５とを介して裏面の接地電極１６に導通されている。   Further, a through hole 15 penetrating through the dielectric substrate 1 and filled with a conductor is formed in the vicinity of the land for the GND1 terminal of the dielectric substrate 1, and the land for the GND1 terminal is a microstrip line wiring. The electrode pattern 14 and the through hole 15 are electrically connected to the ground electrode 16 on the back surface.

また、誘電体基板１の対向する所定の２端面（図１（ａ）における、右手前面と左奥面）には円弧状の切り欠き部が設けられており、この円弧状の切り欠き部の側面には電極が形成されており、この電極に導通するように誘電体基板１の表面の前記切り欠き部周辺にも電極が形成されている。そして、これらの電極は裏面の接地電極１６に導通されている。ここで、誘電体基板１の表面には、ＧＮＤ２端子用ランドと前記円弧状の切り欠き部周辺に形成された電極とを導通させる接地電極パターン１３が形成されている。   In addition, arc-shaped cutouts are provided on two opposing end surfaces of the dielectric substrate 1 (the front surface of the right hand and the left back surface in FIG. 1A). An electrode is formed on the side surface, and an electrode is also formed around the notch on the surface of the dielectric substrate 1 so as to be electrically connected to the electrode. These electrodes are electrically connected to the ground electrode 16 on the back surface. Here, a ground electrode pattern 13 is formed on the surface of the dielectric substrate 1 to connect the GND2 terminal land and the electrode formed around the arc-shaped cutout portion.

また、誘電体基板１の４つの角部のうちの３つにはコントロール電圧信号入力電極１０１、駆動電圧信号入力電極１０２、および発振信号出力電極１０３が形成されており、残りの角部はＮＣ端子となっている。   Further, a control voltage signal input electrode 101, a drive voltage signal input electrode 102, and an oscillation signal output electrode 103 are formed in three of the four corners of the dielectric substrate 1, and the remaining corners are NC. It is a terminal.

ＩＣチップ２は、前述の各端子が備えられるとともに、図３に示すように、共振器Ｌ１（図１、図２における共振器電極パターン１１）を除く、次に示す発振回路の各回路素子および回路パターンを備えている。具体的には、コンデンサＣ１の一方端には、可変容量ダイオードＶＤのカソードが接続されるとともに、インダクタＬ０を介してＶｃ端子が接続されている。可変容量ダイオードＶＤのアノードはＧＮＤ１端子に接続されており、Ｖｃ端子もコンデンサＣ０を介してＧＮＤ１端子に接続されている。コンデンサＣ１の他方端はコンデンサＣ２を介して発振用トランジスタＴｒ１のベースに接続されるとともにＲｅｓ端子に接続される。   The IC chip 2 is provided with the above-described terminals and, as shown in FIG. 3, except for the resonator L1 (resonator electrode pattern 11 in FIGS. 1 and 2), A circuit pattern is provided. Specifically, the cathode of the variable capacitance diode VD is connected to one end of the capacitor C1, and the Vc terminal is connected via the inductor L0. The anode of the variable capacitance diode VD is connected to the GND1 terminal, and the Vc terminal is also connected to the GND1 terminal via the capacitor C0. The other end of the capacitor C1 is connected to the base of the oscillation transistor Tr1 through the capacitor C2 and to the Res terminal.

発振用トランジスタＴｒ１のエミッタは抵抗素子Ｒ４を介してＥｍｉ端子に接続されるとともに、コンデンサＣ６を介してＧＮＤ１端子に接続されている。また、発振用トランジスタＴｒ１のエミッタはコンデンサＣ４を介してバッファ用トランジスタＴｒ２のベースに接続されている。また、発振用トランジスタＴｒ１のエミッタとベースとの間には帰還用コンデンサＣ３が接続されている。   The emitter of the oscillating transistor Tr1 is connected to the Emi terminal via the resistor element R4, and is connected to the GND1 terminal via the capacitor C6. The emitter of the oscillation transistor Tr1 is connected to the base of the buffer transistor Tr2 via the capacitor C4. A feedback capacitor C3 is connected between the emitter and base of the oscillation transistor Tr1.

発振用トランジスタＴｒ１のコレクタとバッファ用トランジスタＴｒ２のエミッタとはコンデンサＣ５を介してＧＮＤ１端子に接続されている。   The collector of the oscillation transistor Tr1 and the emitter of the buffer transistor Tr2 are connected to the GND1 terminal via the capacitor C5.

バッファ用トランジスタＴｒ２のコレクタは、インダクタＬ２を介して駆動電圧信号入力端子であるＶｂ端子に接続されるとともに、コンデンサＣ７を介して発振信号出力端子であるＯＵＴ端子に接続されている。   The collector of the buffer transistor Tr2 is connected to the Vb terminal that is the drive voltage signal input terminal via the inductor L2, and is also connected to the OUT terminal that is the oscillation signal output terminal via the capacitor C7.

Ｖｂ端子はコンデンサＣ８を介してＧＮＤ２端子に接続されている。また、Ｖｂ端子とＧＮＤ１端子との間には、抵抗素子Ｒ１，Ｒ２，Ｒ３が直列接続されており、この抵抗素子Ｒ１，Ｒ２の接続点がバッファ用トランジスタＴｒ２のベースに接続され、抵抗素子Ｒ２，Ｒ３の接続点が発振用トランジスタＴｒ１のベースに接続されている。   The Vb terminal is connected to the GND2 terminal via the capacitor C8. Further, resistance elements R1, R2, and R3 are connected in series between the Vb terminal and the GND1 terminal, and the connection point of the resistance elements R1, R2 is connected to the base of the buffer transistor Tr2, and the resistance element R2 , R3 is connected to the base of the oscillation transistor Tr1.

このようなＩＣチップ２が誘電体基板１に形成されたランドに実装される。   Such an IC chip 2 is mounted on a land formed on the dielectric substrate 1.

このような構成とすることで、共振器部を除く発振回路を備えたＩＣチップ２を、共振器電極パターン１１が形成された誘電体基板１に実装してなる電圧制御発振器が形成される。そして、この電圧制御発振器は、図３に示すように、発振用トランジスタＴｒ１のエミッタ−ベース間にコンデンサＣ３が接続され、エミッタ−コレクタ間にコンデンサＣ６が接続され、ベース−コレクタ間に共振器Ｌ１が接続されるので、これらの素子によりコルピッツ型の発振器が構成される。なお、コンデンサＣ５については実質的に非常にインピーダンスが低い状態になるので、接続関係の説明を省略している。   With such a configuration, a voltage-controlled oscillator is formed by mounting the IC chip 2 including the oscillation circuit excluding the resonator portion on the dielectric substrate 1 on which the resonator electrode pattern 11 is formed. In the voltage controlled oscillator, as shown in FIG. 3, a capacitor C3 is connected between the emitter and base of the oscillation transistor Tr1, a capacitor C6 is connected between the emitter and collector, and a resonator L1 is connected between the base and collector. Therefore, a Colpitts type oscillator is constituted by these elements. The capacitor C5 is substantially in a very low impedance state, so the description of the connection relationship is omitted.

このような構成の電圧制御発振器を他の機能回路が形成されたモジュール基板に実装する際には、このモジュール基板の接地電極に、誘電体基板１の側面および裏面の電極を半田等で接合し、電圧制御発振器の接地電位を確保する。そして、電圧制御発振器の前記Ｖｂ端子、Ｖｃ端子、ＯＵＴ端子を、モジュール基板のこれらが実装されるランドに電気的に接合させることで、電圧制御発振器に駆動電圧信号およびコントロール電圧信号が供給され、共振器と発振回路とで所定周波数の発振信号を出力する。   When the voltage controlled oscillator having such a configuration is mounted on a module substrate on which another functional circuit is formed, the electrodes on the side and back surfaces of the dielectric substrate 1 are joined to the ground electrode of the module substrate with solder or the like. Secure the ground potential of the voltage controlled oscillator. Then, the drive voltage signal and the control voltage signal are supplied to the voltage controlled oscillator by electrically joining the Vb terminal, the Vc terminal, and the OUT terminal of the voltage controlled oscillator to the land on which the module board is mounted. An oscillation signal having a predetermined frequency is output by the resonator and the oscillation circuit.

このような構成とすることで、前述のように共振器電極パターン１１の一方端が発振用トランジスタＴｒ１のエミッタと接地とに導通するＧＮＤ１端子用ランドに直接接続されるので、誘電体基板１の表面の配線電極パターン１４、スルーホール１５、および裏面の接地電極１６によるインダクタＬP ，ＬTH，ＬG がコルピッツ型の発振器を構成する発振用トランジスタＴｒ１のベース−コレクタ間に挿入されないので、これらのインダクタに影響されることなく、所望の発振周波数で安定して発振する電圧制御発振器を構成することができる。また、従来例のように電極パターン、スルーホール、接地電極からなる比較的長い経路を介して前記ベース−コレクタ間が接続されないので、これらの電極による導体損の発生を抑制することができ、Ｃ／Ｎ特性に優れる電圧制御発振器を構成することができる。 With this configuration, as described above, one end of the resonator electrode pattern 11 is directly connected to the GND1 terminal land that is electrically connected to the emitter of the oscillation transistor Tr1 and the ground. wiring electrode patterns 14 of the surface, the through hole 15, and the inductor L P by the rear surface of the ground electrode 16, L TH, L G is the base of the oscillation transistor Tr1 configuring the oscillator Colpitts - since it is not inserted between the collectors, these Thus, it is possible to configure a voltage controlled oscillator that oscillates stably at a desired oscillation frequency without being influenced by the inductor. In addition, since the base and the collector are not connected through a relatively long path including an electrode pattern, a through hole, and a ground electrode as in the conventional example, the occurrence of conductor loss due to these electrodes can be suppressed. A voltage-controlled oscillator having excellent / N characteristics can be configured.

また、このような構成とすることで、誘電体基板裏面の接地電極にモジュール基板からノイズが伝搬しても、発振回路および共振器電極が形成された誘電体基板表面にはノイズが殆ど伝搬されず安定した発振特性を備える電圧制御発振器を構成することができる。   In addition, with such a configuration, even if noise propagates from the module substrate to the ground electrode on the back surface of the dielectric substrate, almost no noise is propagated to the surface of the dielectric substrate on which the oscillation circuit and the resonator electrode are formed. Thus, a voltage controlled oscillator having stable oscillation characteristics can be configured.

なお、図１に示すように、本実施形態の電圧制御発振器ではＩＣチップ２が実装された誘電体基板１の表面側には、この表面およびＩＣチップ２を覆うように金属ケース３が設置されている。この金属ケース３は前記誘電体基板１の側面に形成された電極に導通しているので、誘電体基板１に形成された電圧制御発振器が外部回路からの信号の影響を受けることが抑制される。これにより、さらに発振特性に優れる電圧制御発振器を構成することができる。   As shown in FIG. 1, in the voltage controlled oscillator of this embodiment, a metal case 3 is installed on the surface side of the dielectric substrate 1 on which the IC chip 2 is mounted so as to cover the surface and the IC chip 2. ing. Since the metal case 3 is electrically connected to the electrode formed on the side surface of the dielectric substrate 1, the voltage controlled oscillator formed on the dielectric substrate 1 is suppressed from being affected by the signal from the external circuit. . As a result, a voltage controlled oscillator having further excellent oscillation characteristics can be configured.

次に、第２の実施形態に係る電圧制御発振器について、図４〜図６を参照して説明する。
図４は本実施形態の電圧制御発振器の概略構成を示す斜視図である。また、図５は図１に示す電圧制御発振器の基板の上面図である。また、図６は本実施形態の電圧制御発振器の等価回路図である。 Next, a voltage controlled oscillator according to a second embodiment will be described with reference to FIGS.
FIG. 4 is a perspective view showing a schematic configuration of the voltage controlled oscillator of the present embodiment. FIG. 5 is a top view of the substrate of the voltage controlled oscillator shown in FIG. FIG. 6 is an equivalent circuit diagram of the voltage controlled oscillator of this embodiment.

図４、図５に示す電圧制御発振器は、図１、図２に示した電圧制御発振器の配線電極パターン１２の途中点に抵抗素子４を挿入したものであり、他の構成は図１、図２に示した電圧制御発振器と同じである。抵抗素子４を等価回路図上でＲ５とし、これを等価回路図で表すと、図６に示す等価回路図となる。図６の等価回路図に示すように、本実施形態の電圧制御発振器は発振用トランジスタＴｒ１のエミッタと共振器Ｌ１の途中点と間に抵抗素子Ｒ４と抵抗素子Ｒ５が直列接続されたものであり、他の構成は第１の実施形態に示した電圧制御発振器と同じである。ここで、抵抗素子Ｒ５はＩＣチップ２内に形成されるものではなく、誘電体基板１表面に実装されるので、この抵抗素子Ｒ５の抵抗値を変化させることで、発振回路に流れる電流を調整することができる。   The voltage controlled oscillator shown in FIGS. 4 and 5 has a resistance element 4 inserted in the middle of the wiring electrode pattern 12 of the voltage controlled oscillator shown in FIGS. 1 and 2, and other configurations are shown in FIGS. This is the same as the voltage controlled oscillator shown in FIG. If the resistance element 4 is R5 on the equivalent circuit diagram, and this is represented by the equivalent circuit diagram, the equivalent circuit diagram shown in FIG. 6 is obtained. As shown in the equivalent circuit diagram of FIG. 6, the voltage controlled oscillator according to the present embodiment has a resistance element R4 and a resistance element R5 connected in series between the emitter of the oscillation transistor Tr1 and the midpoint of the resonator L1. The other configurations are the same as those of the voltage controlled oscillator shown in the first embodiment. Here, the resistance element R5 is not formed in the IC chip 2, but is mounted on the surface of the dielectric substrate 1, so that the current flowing through the oscillation circuit is adjusted by changing the resistance value of the resistance element R5. can do.

したがって、このような構成とすることにより、１種類の発振用ＩＣチップで複数種類の消費電流量や出力レベルを得ることができる。すなわち、１種類のＩＣチップで複数種類の電圧制御発振器を形成することができる。   Therefore, with such a configuration, a plurality of types of current consumption and output levels can be obtained with one type of oscillation IC chip. That is, a plurality of types of voltage controlled oscillators can be formed with one type of IC chip.

なお、前述の各実施形態では、共振器電極を誘電体基板の表面に形成したが、多層誘電体基板を用いて、内層電極で共振器電極を形成してもよい。このような構造とすることで、誘電体基板表面にＩＣチップを実装し、その下層（内層）に共振器電極を形成することが可能となり、電圧制御発振器の形状を小さくすることができる。   In each of the above-described embodiments, the resonator electrode is formed on the surface of the dielectric substrate. However, the resonator electrode may be formed of an inner layer electrode using a multilayer dielectric substrate. With such a structure, an IC chip can be mounted on the surface of the dielectric substrate, and a resonator electrode can be formed in the lower layer (inner layer), thereby reducing the shape of the voltage controlled oscillator.

また、前述の各実施形態では電圧制御発振器を例に説明したが、共振器とこの共振器以外の部分からなる発振回路を備えたＩＣチップとからなる高周波発振器であれば、前述の構成を適用でき、前述の効果を奏することができる。   In each of the above-described embodiments, the voltage-controlled oscillator has been described as an example. However, if the high-frequency oscillator includes a resonator and an IC chip including an oscillation circuit other than the resonator, the above-described configuration is applied. And the effects described above can be achieved.

第１の実施形態の電圧制御発振器の概略構成を示す斜視図The perspective view which shows schematic structure of the voltage controlled oscillator of 1st Embodiment. 図１に示す電圧制御発振器の基板の上面図および下面図Top view and bottom view of the substrate of the voltage controlled oscillator shown in FIG. 図１に示す電圧制御発振器の等価回路図1 is an equivalent circuit diagram of the voltage controlled oscillator shown in FIG. 第２の実施形態の電圧制御発振器の概略構成を示す斜視図The perspective view which shows schematic structure of the voltage controlled oscillator of 2nd Embodiment. 図４に示す電圧制御発振器の基板の上面図Top view of the substrate of the voltage controlled oscillator shown in FIG. 図４に示す電圧制御発振器の等価回路図4 is an equivalent circuit diagram of the voltage controlled oscillator shown in FIG. 従来の電圧制御発振器の概略構成を示す斜視図A perspective view showing a schematic configuration of a conventional voltage controlled oscillator 図７に示す電圧制御発振器の基板の上面図および下面図The top view and bottom view of the substrate of the voltage controlled oscillator shown in FIG. 図７に示す電圧制御発振器の等価回路図7 is an equivalent circuit diagram of the voltage controlled oscillator shown in FIG.

符号の説明Explanation of symbols

１−誘電体基板
２−ＩＣチップ
３−金属ケース
４−抵抗素子
１１−共振器電極
１２−配線電極パターン
１３−接地電極パターン
１４−配線電極パターン
１５−スルーホール
１６−接地電極
１０１−コントロール電圧信号入力電極
１０２−駆動電圧信号入力電極
１０３−発振信号出力電極 1-dielectric substrate 2-IC chip 3-metal case 4-resistance element 11-resonator electrode 12-wiring electrode pattern 13-ground electrode pattern 14-wiring electrode pattern 15-through hole 16-ground electrode 101-control voltage signal Input electrode 102-driving voltage signal input electrode 103-oscillation signal output electrode

Claims (3)

実装基板に実装され、少なくとも発振用トランジスタとバッファ用トランジスタとを備えたＩＣチップと、前記実装基板の表面に形成された発振周波数調整用の共振器電極とを備え、該共振器電極を前記ＩＣチップに導通させてなる高周波発振器において、
前記ＩＣチップは、前記発振用トランジスタのベースにコンデンサを介して接続する共振器接続端子と、前記発振用トランジスタのエミッタにコンデンサを介して接続する発振回路用グランド端子と、前記発振用トランジスタのエミッタに第１の抵抗素子を介して接続する発振回路用エミッタ端子とを有し、
前記実装基板は、前記発振回路用グランド端子が接続されるランドと、前記共振器接続端子が接続されるランドと、前記発振回路用エミッタ端子が接続されるランドとを含む複数のランドを表面に有するとともに、前記発振回路用グランド端子が接続されるランドを起点として、該発振回路用グランド端子が接続されるランドと前記実装基板の端面との距離よりも短い位置に、スルーホールを有し、該スルーホールが前記実装基板の表面の前記発振回路用グランド端子が接続されるランドと前記実装基板の裏面に設けられたグランド電極とを電気的に接続し、
前記実装基板の表面に形成される前記共振器電極は、一方端が前記共振器接続端子が接続されるランドに接続され、他方端が前記発振回路用グランド端子が接続されるランドに直接接続されるとともに、前記一方端と前記他方端との間の途中点が、前記実装基板に形成された分岐線路を介して、前記発振回路用エミッタ端子が接続されるランドへ接続されることを特徴とする高周波発振器。 An IC chip that is mounted on a mounting substrate and includes at least an oscillation transistor and a buffer transistor, and an oscillation frequency adjusting resonator electrode formed on the surface of the mounting substrate, the resonator electrode being the IC In a high-frequency oscillator that is connected to the chip,
The IC chip includes a resonator connection terminal connected to the base of the oscillation transistor via a capacitor, an oscillation circuit ground terminal connected to the emitter of the oscillation transistor via a capacitor, and an emitter of the oscillation transistor And an emitter terminal for an oscillation circuit connected via a first resistance element,
The mounting substrate has a plurality of lands including a land to which the oscillation circuit ground terminal is connected, a land to which the resonator connection terminal is connected, and a land to which the oscillation circuit emitter terminal is connected on the surface. And having a through hole at a position shorter than the distance between the land to which the oscillation circuit ground terminal is connected and the end surface of the mounting board, starting from the land to which the oscillation circuit ground terminal is connected, The through hole electrically connects a land to which the oscillation circuit ground terminal on the surface of the mounting substrate is connected and a ground electrode provided on the back surface of the mounting substrate,
The resonator electrode formed on the surface of the mounting substrate has one end connected to the land to which the resonator connection terminal is connected , and the other end directly connected to the land to which the oscillation circuit ground terminal is connected. And an intermediate point between the one end and the other end is connected to a land to which the oscillator circuit emitter terminal is connected via a branch line formed on the mounting substrate. High frequency oscillator. 前記共振器電極は、全てが前記実装基板の表面に形成されている請求項１に記載の高周波発振器。   The high-frequency oscillator according to claim 1, wherein all the resonator electrodes are formed on a surface of the mounting substrate. 前記分岐線路上には、前記共振器電極と前記発振回路用エミッタ端子との間に直列接続される抵抗として、第２の抵抗素子が実装されている請求項１または請求項２に記載の高周波発振器。 3. The high frequency device according to claim 1, wherein a second resistance element is mounted on the branch line as a resistor connected in series between the resonator electrode and the oscillator circuit emitter terminal . 4. Oscillator.
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JP2000114874A (en) * 1998-10-01 2000-04-21 Seiko Epson Corp Saw oscillator
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JP2000312113A (en) * 1999-04-27 2000-11-07 Matsushita Electric Ind Co Ltd Oscillator
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JPH05259720A (en) * 1992-03-12 1993-10-08 Ngk Insulators Ltd Printed circuit board incorporated with microwave resonator
JP2000114874A (en) * 1998-10-01 2000-04-21 Seiko Epson Corp Saw oscillator
JP2000216485A (en) * 1999-01-25 2000-08-04 Sanyo Electric Co Ltd Semiconductor device
JP2000312113A (en) * 1999-04-27 2000-11-07 Matsushita Electric Ind Co Ltd Oscillator
JP2001244741A (en) * 2000-02-29 2001-09-07 Matsushita Electric Ind Co Ltd Voltage-controlled oscillator

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