CN1629986A - Copper electrode strontium titanate annular piezoresistor and method for making same - Google Patents
Copper electrode strontium titanate annular piezoresistor and method for making same Download PDFInfo
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- CN1629986A CN1629986A CN 200310117432 CN200310117432A CN1629986A CN 1629986 A CN1629986 A CN 1629986A CN 200310117432 CN200310117432 CN 200310117432 CN 200310117432 A CN200310117432 A CN 200310117432A CN 1629986 A CN1629986 A CN 1629986A
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- Prior art keywords
- electrode
- sensitive resistor
- copper
- ceramic substrate
- strontium titanates
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- 239000010949 copper Substances 0.000 title claims abstract description 54
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 49
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 47
- 238000000034 method Methods 0.000 title claims abstract description 12
- VEALVRVVWBQVSL-UHFFFAOYSA-N strontium titanate Chemical compound [Sr+2].[O-][Ti]([O-])=O VEALVRVVWBQVSL-UHFFFAOYSA-N 0.000 title abstract 2
- 239000002002 slurry Substances 0.000 claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000919 ceramic Substances 0.000 claims abstract description 23
- 238000001035 drying Methods 0.000 claims abstract description 11
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 229910052712 strontium Inorganic materials 0.000 claims description 33
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 33
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000012298 atmosphere Substances 0.000 claims description 15
- 229910052573 porcelain Inorganic materials 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 239000001257 hydrogen Substances 0.000 claims description 8
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 7
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000428 dust Substances 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 238000005245 sintering Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- BPQQTUXANYXVAA-UHFFFAOYSA-N Orthosilicate Chemical compound [O-][Si]([O-])([O-])[O-] BPQQTUXANYXVAA-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000004111 Potassium silicate Substances 0.000 claims description 2
- 239000004115 Sodium Silicate Substances 0.000 claims description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims description 2
- 229910052810 boron oxide Inorganic materials 0.000 claims description 2
- 235000012241 calcium silicate Nutrition 0.000 claims description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims description 2
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 2
- 235000013312 flour Nutrition 0.000 claims description 2
- 229910000464 lead oxide Inorganic materials 0.000 claims description 2
- HCWCAKKEBCNQJP-UHFFFAOYSA-N magnesium orthosilicate Chemical compound [Mg+2].[Mg+2].[O-][Si]([O-])([O-])[O-] HCWCAKKEBCNQJP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000391 magnesium silicate Substances 0.000 claims description 2
- 235000019792 magnesium silicate Nutrition 0.000 claims description 2
- 229910052919 magnesium silicate Inorganic materials 0.000 claims description 2
- 239000012299 nitrogen atmosphere Substances 0.000 claims description 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims description 2
- NNHHDJVEYQHLHG-UHFFFAOYSA-N potassium silicate Chemical compound [K+].[K+].[O-][Si]([O-])=O NNHHDJVEYQHLHG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052913 potassium silicate Inorganic materials 0.000 claims description 2
- 235000019353 potassium silicate Nutrition 0.000 claims description 2
- 238000007650 screen-printing Methods 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- 235000019795 sodium metasilicate Nutrition 0.000 claims description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical group [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 claims description 2
- 229910052911 sodium silicate Inorganic materials 0.000 claims description 2
- 238000007639 printing Methods 0.000 abstract description 4
- 229910052709 silver Inorganic materials 0.000 description 19
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 18
- 239000004332 silver Substances 0.000 description 18
- 239000002904 solvent Substances 0.000 description 4
- 229920002472 Starch Polymers 0.000 description 3
- 235000019698 starch Nutrition 0.000 description 3
- 239000008107 starch Substances 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 229910002367 SrTiO Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000008246 gaseous mixture Substances 0.000 description 2
- 150000002431 hydrogen Chemical class 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- BSWGGJHLVUUXTL-UHFFFAOYSA-N silver zinc Chemical compound [Zn].[Ag] BSWGGJHLVUUXTL-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Abstract
This invention discloses circular piezoresistor and making method thereof, which consists of a circular resistor substrate and three or more than three electrodes wherein the substrate is made of strontium titanate and the electrode is a copper electrode located on upper end face, lower end face or outside face of substrate. The making process contains ceramic cog preparation, printing and drying of copper slurry and deacidizing of copper electrode.
Description
Technical field
The present invention relates to a kind of preparation method and products obtained therefrom of strontium titanates annular voltage-sensitive resistor, more particularly, the present invention relates to a kind of with the preparation method and the products obtained therefrom of copper as the strontium titanates annular voltage-sensitive resistor of electrode.
Technical background
The strontium titanates annular voltage-sensitive resistor is a kind of electronic component that is mainly used on the DC micromotor, plays absorption spark and the effect of abating the noise.
Existing strontium titanates annular voltage-sensitive resistor mainly is to adopt silver as electrode, and the manufacture craft of this varistor is: earlier with silk-screen brush ground floor silver slurry, and dry under 100 ℃～200 ℃ temperature; Starch with silk screen printing second layer silver again, and under 100 ℃～200 ℃ temperature, dry; At last ground floor silver slurry and second layer silver slurry are reduced under 550 ℃～650 ℃ temperature.Its reason that need carry out twice printed silver slurry is: the silver slurry is a kind of slurry that does not have ohm property, and after the semiconductor of a printed silver slurry had born the pulse voltage impact of certain altitude, can show resistance value had the phenomenon that descends by a relatively large margin.Therefore, before the printed silver slurry, need to print earlier the slurry (for example Ag-Zn slurry) that one deck has ohm property; And this ohm slurry itself has solderability hardly, so also need to republish one deck silver slurry.As seen, when adopting silver, exist the shortcoming that preparation technology is loaded down with trivial details, cost is higher, solderability is relatively poor as electrode.
Chinese patent application CN 02114902.x and Chinese patent CN 02225950.3 disclose a kind of multielectrode ring voltage-sensitive resistor, it comprises annular electro resistance body and the electrode that is connected on the annular electro resistance body, its electrode includes both ends of the surface electrode and side electrode, and both ends of the surface electrode and side electrode link together.CN 02114902.x and CN 02225950.3 disclose its annular electro resistance body simultaneously by ZnO, SrTiO
3, TiO
2, SiC and SnO
2One or more doping in the material are fired and are formed, and its electrode is made by among Ag, Cu, Au, Al, Ni, Pt, Sn, Zn, In-Ga, Pd and the Cd one or more, but it does not indicate specially and uses SrTiO
3As the annular electro resistance body, do not indicate the advantage of Cu electrode than Ag electrode yet, the preparation method of copper electrode strontium titanates annular voltage-sensitive resistor is not more disclosed.
Summary of the invention
The purpose of this invention is to provide a kind of copper electrode strontium titanates annular voltage-sensitive resistor, this resistor can be avoided " waving silver " phenomenon of silver electrode annular voltage-sensitive resistor.
Annular voltage-sensitive resistor of the present invention comprises the resistance ceramic substrate and the electrode more than three or three of an annular; Ring resistance device ceramic substrate is made by strontium titanates, and electrode is a copper electrode, and copper electrode is connected on the ring resistance device ceramic substrate, and is positioned on upper surface, lower surface or the lateral surface of ring resistance device ceramic substrate.
Adopt the advantage of copper electrode to be among the present invention: the electrode that the copper slurry is made has solderability preferably, and the copper slurry itself is exactly a kind of ohm of slurry, and the method that prepare copper electrode is simple relatively, replaces silver to starch if use copper to starch, and only prints one deck and gets final product.
In above-mentioned annular voltage-sensitive resistor, the weight percentage of copper generally is controlled between the 70-95% in the copper electrode.
Among the present invention, copper electrode can also contain 5-30%, be selected from a kind of material in glass dust, silicate, silica flour, boron oxide, lead oxide and the bismuth oxide or the mixture of several materials.Above-mentioned silicate is preferably selected from a kind of material or several material in sodium metasilicate, potassium silicate, magnesium silicate and calcium silicates.
On the other hand, the present invention also provides a kind of method of making the strontium titanates annular voltage-sensitive resistor, and this method may further comprise the steps:
(1) the strontium titanates porcelain prepares the porcelain base of strontium titanates annular voltage-sensitive resistor;
(2) the porcelain base with preparation in the step (1) at high temperature carries out binder removal;
(3) the porcelain base behind the binder removal of preparation in the step (2) is reduced sintering in reducing atmosphere, make ceramic substrate;
(4) with the prepared ceramic substrate of step (3) 800 ℃ of-1000 ℃ of following oxidations;
(5) copper slurry is printed onto on the resulting ceramic substrate of step (4), and carries out drying, form copper electrode;
(6), promptly make the strontium titanates annular voltage-sensitive resistor at blanket of nitrogen or nitrogen and hydrogen mixture atmosphere, under 700 ℃-900 ℃, the copper electrode of gained in the step (5) is reduced.
In the said method, the high temperature binder removal of step (2) normally carries out under 500-800 ℃, preferably carries out under 580-720 ℃.
Among the present invention, the reducing atmosphere of step (3) is generally nitrogen atmosphere or nitrogen and hydrogen mixture atmosphere, can certainly be other suitable reducing atmosphere.The temperature of reduction sintering is generally 800-1500 ℃, is preferably 1100-1450 ℃.
The printing of copper slurry can use silk screen or other can play the utensil of printing effect in the step (5).The mesh size of silk screen should be selected according to the character of slurry, makes slurry can be printed onto the ceramic substrate surface equably.Preferred 180～300 purpose silk screens that use.The copper slurry that uses in the printing is that copper content is 60%-90%, is preferably 70%-85%, can also contain other in the copper slurry and can make copper electrode be printed onto composition on the ceramic substrate.For example, can contain the glass dust of 9%-20% and the solvent of 1%-10%.Drying means in this step is air dry, blowing drying or bake drying, and the temperature of bake drying is generally 70-220 ℃, and preferred temperature range is 100-200 ℃.
In step (6), the reply copper electrode reduce fully, the time of reduction is not particularly limited, but preferably at several minutes to a few hours, more preferably in 10-30 minute.
Copper electrode strontium titanates annular voltage-sensitive resistor of the present invention has overcome that the silver electrode annular voltage-sensitive resistor raises owing to welding temperature or welding times increases the silver layer that occurs and consumes phenomenon, promptly so-called " waving silver ".Simultaneously, this copper electrode strontium titanates annular voltage-sensitive resistor has better soldering resistance energy than silver electrode annular voltage-sensitive resistor, can bear 480 ℃ of flatiron welding more than 10 seconds.
Description of drawings
Fig. 1 is positioned at the strontium titanates annular voltage-sensitive resistor of upper surface for copper electrode.
Fig. 2 is positioned at the strontium titanates annular voltage-sensitive resistor of side end face for copper electrode.
Among the figure, l------upper surface copper electrode (dash area)
2------side end face copper electrode (dash area)
3------annular voltage-sensitive resistor body
Embodiment
Embodiment 1
Adopt crowded mold forming legal system to get ring-type base sheet the special-purpose porcelain of strontium titanates annular voltage-sensitive resistor, and behind binder removal under 650 ℃ the temperature, after going out semiconductive ceramic with 1350 ℃ temperature sintering in the atmosphere furnace of nitrogenous hydrogen gaseous mixture, obtain strontium titanates annular voltage-sensitive resistor ceramic substrate through 900 ℃ of oxidations.To contain Cu amount and be 80% (weight percentage), glass dust content and be 15%, solvent is 5% copper slurry, is screen-printed on this substrate (and 150 ℃ of oven dry down) by 200 purposes; And be to obtain copper electrode strontium titanates annular voltage-sensitive resistor after 800 ℃ the atmosphere furnace reduction of nitrogenous hydrogen gaseous mixture through excess temperature, can get through estimating, the solderability of annular strontium titanates is better.
Adopt crowded mold forming legal system to get ring-type base sheet the special-purpose porcelain of strontium titanates annular voltage-sensitive resistor, and behind binder removal under 600 ℃ the temperature, after going out semiconductive ceramic with 1200 ℃ temperature sintering in the atmosphere furnace of hydrogen, obtain strontium titanates annular voltage-sensitive resistor ceramic substrate through 800 ℃ of oxidations.To contain the Cu amount is 70%, and glass dust content is 20%, and solvent is 10% copper slurry, is screen-printed on this substrate (and drying under 100 ℃ temperature) by 180 purposes; And be to obtain copper electrode strontium titanates annular voltage-sensitive resistor after 700 ℃ the atmosphere furnace reduction of nitrogen through excess temperature, can get through estimating, the solderability of annular strontium titanates is better.
Embodiment 3
Adopt dry pressing to make ring-type base sheet the special-purpose porcelain of strontium titanates annular voltage-sensitive resistor, and behind binder removal under 750 ℃ the temperature, after going out semiconductive ceramic with 1400 ℃ temperature sintering in the atmosphere furnace of hydrogen, obtain strontium titanates annular voltage-sensitive resistor ceramic substrate through 1000 ℃ of oxidations.To contain the Cu amount is 85%, and glass dust content is 9%, and solvent is 6% copper slurry, is screen-printed on this substrate (and drying under 200 ℃ temperature) by 300 purposes; And be to obtain copper electrode strontium titanates annular voltage-sensitive resistor after 900 ℃ the atmosphere furnace reduction of nitrogen through excess temperature, can get through estimating, the solderability of annular strontium titanates is better.
Claims (10)
1, a kind of annular voltage-sensitive resistor comprises the resistance ceramic substrate and the electrode more than three or three of an annular it is characterized in that described ring resistance device ceramic substrate is made by strontium titanates that described electrode is a copper electrode; Described electrode is connected on the described ring resistance device ceramic substrate, and is positioned on upper surface, lower surface or the lateral surface of described ring resistance device ceramic substrate.
2, annular voltage-sensitive resistor as claimed in claim 1 is characterized in that, the weight percentage of copper is 60-95% in the described copper electrode.
3, annular voltage-sensitive resistor as claimed in claim 2 is characterized in that, contain in the described copper electrode 5-30%, be selected from a kind of material in glass dust, silicate, silica flour, boron oxide, lead oxide and the bismuth oxide or the mixture of several materials.
4, annular voltage-sensitive resistor as claimed in claim 2 is characterized in that, described silicate is a kind of material or several material that is selected from sodium metasilicate, potassium silicate, magnesium silicate and the calcium silicates.
5, a kind of method of making the strontium titanates annular voltage-sensitive resistor is characterized in that, described method may further comprise the steps:
(1) prepares the porcelain base of strontium titanates annular voltage-sensitive resistor by the strontium titanates porcelain;
(2) the porcelain base with preparation in the step (1) at high temperature carries out binder removal;
(3) the porcelain base behind the binder removal of preparation in the step (2) is reduced sintering in reducing atmosphere, make ceramic substrate;
(4) with the prepared ceramic substrate of step (3) 800 ℃ of-1000 ℃ of following oxidations;
(5) copper slurry is printed onto on the resulting ceramic substrate of step (4), and carries out drying, form copper electrode;
(6), promptly make the strontium titanates annular voltage-sensitive resistor at blanket of nitrogen or nitrogen and hydrogen mixture atmosphere, under 700 ℃-900 ℃, the copper electrode of gained in the step (5) is reduced.
6, method as claimed in claim 5 is characterized in that, the high temperature binder removal described in the step (2) carries out under 500-800 ℃.
7, method as claimed in claim 5 is characterized in that, the reducing atmosphere described in the step (3) is nitrogen atmosphere or nitrogen and hydrogen mixture atmosphere.
8, method as claimed in claim 5 is characterized in that, the copper slurry described in the step (5) is printed as silk screen printing.
9, method as claimed in claim 5 is characterized in that, the Cu content of used copper slurry is 60%-90% in the step (5).
10, method as claimed in claim 5 is characterized in that, the drying means in the step (5) is the dry or bake drying under 70-220 ℃ of air dry, blowing.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310117432 CN1629986B (en) | 2003-12-18 | 2003-12-18 | Copper electrode strontium titanate annular piezoresistor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200310117432 CN1629986B (en) | 2003-12-18 | 2003-12-18 | Copper electrode strontium titanate annular piezoresistor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1629986A true CN1629986A (en) | 2005-06-22 |
| CN1629986B CN1629986B (en) | 2010-04-28 |
Family
ID=34843579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200310117432 Expired - Fee Related CN1629986B (en) | 2003-12-18 | 2003-12-18 | Copper electrode strontium titanate annular piezoresistor |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1629986B (en) |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102013292A (en) * | 2010-10-22 | 2011-04-13 | 广东风华高新科技股份有限公司 | Welded circular piezoresistor as well as preparation method and application thereof |
| CN102324265A (en) * | 2011-07-20 | 2012-01-18 | 彩虹集团公司 | Single-layer silver paste for annular varistor and method for preparing single-layer silver paste |
| CN102354597A (en) * | 2011-06-27 | 2012-02-15 | 广东风华高新科技股份有限公司 | Manufacturing method of miniature annular piezoresistor and special device thereof |
| CN102855959A (en) * | 2012-09-13 | 2013-01-02 | 上海交通大学 | Surface-layer silver paste for SrTiO3 piezoresistor and preparation method of surface-layer silver paste |
| CN102881388A (en) * | 2012-09-07 | 2013-01-16 | 广州新莱福磁电有限公司 | Barium strontium calcium titanate annular piezoresistor with copper alloy electrodes and preparation method thereof |
| CN102915816A (en) * | 2012-09-28 | 2013-02-06 | 广东风华高新科技股份有限公司 | Anti-jamming and overvoltage and overcurrent protection sheet type component and manufacturing method thereof |
| CN103319170A (en) * | 2013-06-14 | 2013-09-25 | 广东风华高新科技股份有限公司 | Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof |
| CN103400673A (en) * | 2013-07-31 | 2013-11-20 | 广东风华高新科技股份有限公司 | Preparation system for side circumferential segmented-electrode annular voltage dependent resistor |
| WO2014169514A1 (en) * | 2013-04-17 | 2014-10-23 | 隆科电子(惠阳)有限公司 | Base metal combination electrode of electronic ceramic element and preparation method therefor |
| CN106825559A (en) * | 2017-01-07 | 2017-06-13 | 东莞易力禾电子有限公司 | resistor copper electrode sintering process |
| CN108494209A (en) * | 2018-04-24 | 2018-09-04 | 深圳市精锐昌科技有限公司 | A kind of long-life minitype speed reducing motor |
| CN112768163A (en) * | 2021-01-06 | 2021-05-07 | 肇庆市鼎湖正科集志电子有限公司 | Bismuth-doped copper electrode of strontium titanate annular piezoresistor and preparation method thereof |
| CN113161092A (en) * | 2021-04-01 | 2021-07-23 | 肇庆市鼎湖正科集志电子有限公司 | Method for manufacturing strontium titanate annular piezoresistor copper-tin electrode |
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| CN1367498A (en) * | 2002-02-27 | 2002-09-04 | 广州新莱福磁电有限公司 | Multielectrode ring voltage-sensitive resistor |
| CN2550884Y (en) * | 2002-02-27 | 2003-05-14 | 广州新莱福磁电有限公司 | Multiple electrode circular piezo-dependent resistor |
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- 2003-12-18 CN CN 200310117432 patent/CN1629986B/en not_active Expired - Fee Related
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| CN102013292A (en) * | 2010-10-22 | 2011-04-13 | 广东风华高新科技股份有限公司 | Welded circular piezoresistor as well as preparation method and application thereof |
| CN102354597A (en) * | 2011-06-27 | 2012-02-15 | 广东风华高新科技股份有限公司 | Manufacturing method of miniature annular piezoresistor and special device thereof |
| CN102354597B (en) * | 2011-06-27 | 2013-03-13 | 广东风华高新科技股份有限公司 | Manufacturing method of miniature annular piezoresistor and special device thereof |
| CN102324265A (en) * | 2011-07-20 | 2012-01-18 | 彩虹集团公司 | Single-layer silver paste for annular varistor and method for preparing single-layer silver paste |
| CN102881388A (en) * | 2012-09-07 | 2013-01-16 | 广州新莱福磁电有限公司 | Barium strontium calcium titanate annular piezoresistor with copper alloy electrodes and preparation method thereof |
| CN102855959B (en) * | 2012-09-13 | 2015-07-08 | 上海交通大学 | Surface-layer silver paste for SrTiO3 piezoresistor and preparation method of surface-layer silver paste |
| CN102855959A (en) * | 2012-09-13 | 2013-01-02 | 上海交通大学 | Surface-layer silver paste for SrTiO3 piezoresistor and preparation method of surface-layer silver paste |
| CN102915816B (en) * | 2012-09-28 | 2015-10-28 | 广东风华高新科技股份有限公司 | Anti-interference with overvoltage, overcurrent protection chip component and manufacture method thereof |
| CN102915816A (en) * | 2012-09-28 | 2013-02-06 | 广东风华高新科技股份有限公司 | Anti-jamming and overvoltage and overcurrent protection sheet type component and manufacturing method thereof |
| WO2014169514A1 (en) * | 2013-04-17 | 2014-10-23 | 隆科电子(惠阳)有限公司 | Base metal combination electrode of electronic ceramic element and preparation method therefor |
| CN103319170B (en) * | 2013-06-14 | 2014-07-16 | 广东风华高新科技股份有限公司 | Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof |
| CN103319170A (en) * | 2013-06-14 | 2013-09-25 | 广东风华高新科技股份有限公司 | Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof |
| CN103400673A (en) * | 2013-07-31 | 2013-11-20 | 广东风华高新科技股份有限公司 | Preparation system for side circumferential segmented-electrode annular voltage dependent resistor |
| CN103400673B (en) * | 2013-07-31 | 2016-07-06 | 广东风华高新科技股份有限公司 | Side circumferential sectors electrode ring varistor preparation system |
| CN106825559A (en) * | 2017-01-07 | 2017-06-13 | 东莞易力禾电子有限公司 | resistor copper electrode sintering process |
| CN108494209A (en) * | 2018-04-24 | 2018-09-04 | 深圳市精锐昌科技有限公司 | A kind of long-life minitype speed reducing motor |
| CN112768163A (en) * | 2021-01-06 | 2021-05-07 | 肇庆市鼎湖正科集志电子有限公司 | Bismuth-doped copper electrode of strontium titanate annular piezoresistor and preparation method thereof |
| CN113161092A (en) * | 2021-04-01 | 2021-07-23 | 肇庆市鼎湖正科集志电子有限公司 | Method for manufacturing strontium titanate annular piezoresistor copper-tin electrode |
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| Publication number | Publication date |
|---|---|
| CN1629986B (en) | 2010-04-28 |
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