CN1744239A - Thick-film resistor paste and thick-film resistor - Google Patents
Thick-film resistor paste and thick-film resistor Download PDFInfo
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- CN1744239A CN1744239A CN 200510106746 CN200510106746A CN1744239A CN 1744239 A CN1744239 A CN 1744239A CN 200510106746 CN200510106746 CN 200510106746 CN 200510106746 A CN200510106746 A CN 200510106746A CN 1744239 A CN1744239 A CN 1744239A
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Abstract
A thick-film resistor paste comprised of a resistor composition dispersed in an organic vehicle, the resistor composition containing at least one of RuO 2 and a Ru composite oxide as a conductive material, a glass composition, a titanate compound of an alkali earth metal, a metal material, and further optionally CuO and Cu 2 O as an additive, the formulation of the resistor composition optimized in accordance with the required resistance value, enabling realization of a thick-film resistor free of Pb and superior in temperature characterisic of the resistance value (TCR) and short time overload characteristic (STOL).
Description
Technical field
The present invention relates to be suitable for the thick-film resistor paste of thick-film resistor formation and the thick-film resistor that forms with this thick-film resistor paste.
Background technology
Thick-film resistor paste for example, generally constitutes glass composition, conductive material and organic carrier as main component.Glass composition contains for the modulability of giving resistance value and the cementability of slurry.Behind this thick-film resistor paste of printing on the substrate, by the thick-film resistor about sintering formation thickness 5～20 μ m.And, in this thick-film resistor paste (thick-film resistor), usually, use plumbous ru oxide etc. as conductive material, use lead oxide (PbO) class glass etc. as glass composition.
, warmly discuss environmental problem in recent years, for example, in welding material etc., required to remove delead.No exception in thick-film resistor paste and thick-film resistor, thereby, when considering environment, must avoid using plumbous ru oxide as conductive material with avoid using PbO class glass as described above as glass composition.
According to such situation, carry out the research of unleaded thick-film resistor paste and thick-film resistor in every respect.For example, patent documentation 1 (spy opens the 2003-197405 communique) has following record, and promptly resistance slurry preferably contains above 0vol%, CaTiO below the 13vol%
3Or surpass the following NiO of 0vol%, 12vol%, further preferably add additives such as CuO, ZnO, MgO simultaneously.The document is being put down in writing can provide thus and is being suitable for obtaining the unleaded resistance slurry that one side has the little resistance of the temperature characterisitic (TCR) of high resistance, one side resistance value and voltage-resistent characteristic (STOL).
, utilize the technology of above-mentioned patent documentation 1 record, can see the improvement of TCR and STOL really, substantially also disclose TCR at ± 100ppm with interior, STOL near zero sample.But, about TCR and STOL both, obtain sufficient characteristic, only be in very limited composition, at most composition,, also be the value more than 1% even STOL is little.
Like this,,, for example limit the degree of freedom relevant, the danger that causes fault is arranged in the design of resistance slurry with other characteristics if limit the composition that obtains fully good characteristic about TCR and STOL both.Thereby, wish further to improve.
Summary of the invention
Therefore, the present invention proposes in view of so former basic condition, and its purpose is to provide and can makes the temperature characterisitic (TCR) of resistance value and thick-film resistor paste and the thick-film resistor that voltage-resistent characteristic (STOL) becomes little value reliably not according to composition.
The present inventor is in order to finish above-mentioned purpose, repeat long-term and study intensively, the result obtains following opinion, promptly, by also using the titanium oxide that adds metal material (for example Ag) and alkaline-earth metal, can stably make TCR and STOL both become little value, can make STOL especially almost is value near zero.
The present invention finishes according to such opinion, that is, thick-film resistor paste of the present invention is to disperse resistance composition and the thick-film resistor slurry that constitutes in organic carrier, it is characterized in that above-mentioned resistance composition comprises RuO
2, the Ru composite oxides more than a kind or 2 kinds as conductive material, contain the titanium oxide and the metal material of glass composition, alkaline-earth metal simultaneously.
In the present invention, as additive, the combination of the titanium oxide of metal material and alkaline-earth metal is important, by adding with above-mentioned being combined in the thick-film resistor paste, the TCR of the thick-film resistor of formation is smooth significantly to be turned to ± 100pm in.And,, reach almost near zero the value of (± O.1% in) about STOL at the compositing range of broadness.
According to the present invention, in the thick-film resistor that obtains, can make the temperature characterisitic (TCR) of resistance value and voltage-resistent characteristic (STOL) become little value reliably not according to composition.
Embodiment
Below, the thick-film resistor paste that detailed description the present invention is suitable for and the execution mode of thick-film resistor.
Thick-film resistor paste of the present invention comprises glass composition, conductive material and additive (titanium oxide of metal material and alkaline-earth metal), is to be mixed by resistance composition and organic carrier that these compositions constitute.
Here, conductive material has the effect of giving as the thick-film resistor conductivity of structure by being dispersed in the glass composition as insulator, having.As conductive material, use the conductive material that contains Ru, for example, use RuO
2Or Ru composite oxides.As the Ru composite oxides, preferably from CaRuO
3, SrRuO
3, BaRuO
3, Bi
2Ru
2O
7More than a kind or 2 kinds of middle selection.
Glass composition, it is formed, and there is no particular limitation, but the present invention, aspect environmental protection, the lead-free substantially Nonlead glass composition of preferred use.In the present invention, so-called " not leaded substantially " is to mean not contain lead above impurity level, can contain the meaning of the amount (for example, the content in the glass composition is that about 0.05 quality % is following) of impurity level.Lead as unavoidable impurities, contains the degree of denier sometimes.
Glass composition when forming thick-film resistor, has the effect that makes conductive material and additive and substrate bonding in thick-film resistor.As glass composition, can use the modification oxide components, the mesh that mix as raw material to form oxide components etc. and vitrified.Especially,, preferably use the oxide of alkaline-earth metal, specifically use the so-called CaO class glass of from CaO, SrO, BaO, selecting more than a kind or 2 kinds as main modification oxide components.
Other compositions of above-mentioned glass composition form oxide components as mesh, can list B
2O
3And SiO
2
And, except above-mentioned main modification oxide components,, can use metal oxide arbitrarily as other modification oxide components.As concrete metal oxide, for example, can be ZrO
2, Al
2O
3, ZnO, CuO, NiO, CoO, MnO, Cr
2O
3, V
2O
5, MgO, Li
2O, Na
2O, K
2O, TiO
2, SnO
2, Y
2O
3, Fe
2O
3, MnO
2, Mn
3O
4Deng.Can use from more than a kind or 2 kinds of these selections.
Each composition of glass composition can be selected according to the resistance value of thick-film resistor.
The maximum of thick-film resistor paste of the present invention is characterised in that, comprises above-mentioned conductive material and the glass composition basic composition as resistance composition, and both of titanium oxide that comprise metal material and alkaline-earth metal are as additive.
In these additives, can use the alloy etc. of Ag such as elemental metals such as Ag and Pd, Ag-Pd and Pd, the particulate etc. of conductive metal arbitrarily as metal material.When special consideration was made up with titanium oxide described later, Ag was only.
As the titanium oxide of above-mentioned alkaline-earth metal, can be BaTiO
3, CaTiO
3, SrTiO
3, MgTiO
3Deng, these titanium oxides are preferably selected according to resistance, and, in this case, it is desirable to form also optimization separately.
Specifically, be in the thick-film resistor paste used of the thick-film resistor of 10k Ω/～25M Ω/ making resistance value, form as resistance, preferably make as the BaTiO in the titanium oxide of the Ag of metal material and alkaline-earth metal
3Combination.
At this moment the composition of resistance composition preferably,
Conductive material: 25～35 quality %,
Glass composition: 35～60 quality %,
BaTiO
3: 0～20 quality % (but, do not contain 0),
Metal material: 0～15 quality % (but, do not contain 0).
On the other hand, be in the thick-film resistor paste used of the thick-film resistor of 1k Ω/～500k Ω/ making resistance value, form as resistance, preferably make as the CaTiO in the titanium oxide of the Ag of metal material and alkaline-earth metal
3Or SrTiO
3Combination.
At this moment the composition of resistance composition preferably,
Conductive material: 15～30 quality %,
Glass composition: 50～65 quality %,
CaTiO
3, SrTiO
3More than a kind or 2 kinds: 0～15 quality % (but, do not contain 0),
Metal material: 0～20 quality % (but, do not contain 0).
Here, being used for making thick-film resistor and the resistance value that resistance value as described above is 10k Ω/～25M Ω/ is the thick-film resistor paste of the thick-film resistor of 1k Ω/～500k Ω/, glass composition, preferably comprise the CaO class glass of CaO, modify oxide components as other and preferably also comprise NiO as main modification oxide components.Specifically can list, comprise CaO, B
2O
3, SiO
2And ZrO
2Glass composition, comprise CaO, B
2O
3, SiO
2, ZrO
2With glass composition of NiO etc.
And, being used for making the thick-film resistor paste that resistance value is the thick-film resistor below 10k Ω/, preferably use specific glass composition, make the composition optimization of resistance composition simultaneously.
At this moment composition preferably,
Conductive material: 25～50 quality %,
Glass composition: 20～55 quality %,
BaTiO
3, CaTiO
3, SrTiO
3More than a kind or 2 kinds: 0～10 quality % (but, do not contain 0),
Metal material: 0～45 quality % (but, do not contain 0).
Resistance value is the thick-film resistor paste of the thick-film resistor below 10k Ω/ being used for making as mentioned above, and glass composition is preferably modified oxide components as other and comprised from MnO, Ta
2O
5Middle CaO class glass composition more than a kind or 2 kinds or the SrO class glass composition of selecting.Specifically, be to comprise CaO, B
2O
3, SiO
2With the glass composition of MnO, comprise CaO, B
2O
3, SiO
2, ZrO
2And Ta
2O
5Glass composition, comprise SrO, B
2O
3, SiO
2With the glass composition of MnO, comprise SrO, B
2O
3, SiO
2, ZrO
2And Ta
2O
5Glass composition etc.
Except electricity sun value, the composition with reference to TCR and STOL can determine above-mentioned resistance composition by being in above-mentioned scope, in resistance value separately, can make TCR and STOL become little value really.
Above-mentioned resistance composition becomes thick-film resistor paste by being dispersed in, but as the organic carrier that thick-film resistor paste is used, can use any one that can be used for this thick-film resistor paste in the organic carrier.For example, can mix resin glues such as using ethyl cellulose, polyvinyl butyral resin, methacrylic resin, butyl methacrylate and terpineol, butyl carbitol, acetate of butyl carbitol, acetic acid esters, toluene, various alcohol, dimethylbenzene equal solvent.At this moment, also can be according to purposes etc., suitably and with various dispersants and activating agent, plasticizer etc.
The cooperation ratio of above-mentioned organic carrier, the i.e. ratio (W2/W1) of the quality (W2) of quality of resistance composition (W1) and organic carrier, preferably 0.25～4 (W2: W1=1: 0.25～1: 4).More preferably, above-mentioned ratio (W2/W1) is 0.5～2.When not meeting above-mentioned ratio, have to obtain being suitable for forming the danger of the thick-film resistor paste of the viscosity of thick-film resistor at for example substrate.
Thick-film resistor paste of the present invention by adding the titanium oxide of above-mentioned metal material and alkaline-earth metal simultaneously, even without other additives, also can substantially improve TCR and STOL, but also can comprise other additives as required.As additive, can be metal oxide arbitrarily, especially by and with CuO, Cu
2O etc. can further improve STOL.About CuO, Cu
2O etc., according to resistance value, optimum range is also different, uses in the resistance composition at the thick-film resistor paste that the thick-film resistor of making 10k Ω/～25M Ω/ is used, and is preferably 0～4 quality %.Use in the resistance composition at the thick-film resistor paste that the thick-film resistor of making 1k Ω/～500k Ω/ is used, be preferably 0～5 quality %.
In the thick-film resistor paste that thick-film resistor below making 10k Ω/ is used, as additive, by and use from CuO, Cu
2Select among the O more than a kind or 2 kinds, can further improve STOL.At this moment CuO, Cu
2The optimum content of selecting among the O more than a kind or 2 kinds is below the 8 quality %.
And, making resistance value is in the thick-film resistor paste used of the thick-film resistor below 10k Ω/, except the titanium oxide and the metal material of above-mentioned electric conducting material, glass composition, alkaline-earth metal, preferably further contain as below the 5 quality % of additive from NiO, ZnO, MnO
2, Mn
3O
4More than a kind or 2 kinds of middle selection.Except basic composition, by and be used as additive from NiO, ZnO, MnO
2, Mn
3O
4More than a kind or 2 kinds of middle selection can make the TCR characteristic become better.
In order to form thick-film resistor, for example printing the thick-film resistor paste that (coating) comprises mentioned component on the substrate with methods such as silk screen printings, can be at about 850 ℃ sintering temperature.As substrate, can use Al
2O
3Substrate and BaTiO
3The dielectric base plate of substrate and low-temperature sintered ceramics substrate, AlN substrate etc.As the substrate form, also can be in single layer substrate, composite base plate, the multilager base plate any one.When multilager base plate, thick-film resistor also can form on the surface, also can form in inside.In established thick-film resistor, the composition of the resistance composition that above-mentioned thick-film resistor paste is contained also can be kept former state behind the sintering substantially.
When forming thick-film resistor, become the conductive pattern of electrode usually at substrate, this conductive pattern for example can comprise the electrocondution slurry formation of the excellent conductive material of the Ag class that comprises Ag and Pt, Pd etc. by printing.And, also can form diaphragms such as glass-film (outside be coated with glaze) on the thick-film resistor surface that forms.
Electronic unit as being suitable for thick-film resistor of the present invention is not particularly limited, and for example can be circuit substrate, chip resistor constant resistance device, isolated component, C-R composite component, module component of single or multiple lift etc.And, also can be applicable to electrode parts such as capacitors such as multi-layer chip capacitor and inductor.
Embodiment
Below, according to experimental result, specific embodiments of the invention are described.
The making of＜glass composition 〉
With ormal weight weighing frit oxide (is CaCO during Ca
3, be SrCO during Sr
3), after the ball mill mixing, drying.In platinum crucible, put into the powder that obtains, be warming up to 1300 ℃, after this temperature keeps 1 hour, put into chilling in the water, carry out vitrifying with 5 ℃/minute speed.Pulverize the vitrification that obtains with ball mill, obtain the glass composition powder.The glass composition powder of having made is following 6 kinds.
Glass composition 1=CaO: B
2O
3: SiO
2: ZrO
2=35: 35: 25: 5 (mol%),
Glass composition 2=CaO: B
2O
3: SiO
2: ZrO
2: NiO=35: 35: 25: 5: 2 (mol%),
Glass composition 3=CaO: B
2O
3: SiO
2: MnO=32: 35: 23: 10 (mol%),
Glass composition 4=CaO: B
2O
3: SiO
2: ZrO
2: Ta
2O
5=35: 35: 24: 5: 1 (mol%),
Glass composition 5=SrO: B
2O
3: SiO
2: MnO=32: 35: 23: 10 (mol%),
Glass composition 6=SrO: B
2O
3: SiO
2: ZrO
2: Ta
2O
5=35: 35: 24: 5: 1 (mol%).
The making of＜organic carrier 〉
Use ethyl cellulose as binding agent, use terpinol as organic solvent, the limit adds the thermal agitation organic solvent, and dissolving binding agent in limit is made into organic carrier.
The making of＜thick-film resistor paste 〉
Form weighing conductive material, glass composition powder, additive and organic carrier by each, mix, obtain thick-film resistor paste with 3 rollers mill.Total quality with conductive material, glass composition powder and additive is mixed 1: 0.25～1: 4 scope with the ratio of organic carrier quality, so that the resistance slurry that obtains becomes the suitable viscosity of silk screen printing, is made into resistance slurry.
The making of＜resistance 〉
Behind the shape silk screen printing Ag-Pt conductor paste with regulation on the aluminum oxide substrate of purity 96%, drying.The ratio of Ag is 95 quality % in the Ag-Pt conductor paste, and the ratio of Pt is 5 quality %.This aluminum oxide substrate is put into band oven, carry out the figure sintering of discharging 1 hour from putting into.At this moment sintering temperature is 850 ℃, is 10 minutes in this following retention time of temperature.
Forming on the aluminum oxide substrate of conductor like this, use silk screen print method, apply thick-film resistor paste, the drying of making previously with the figure of stipulating shape (1mm * 1mm's is square).Then, the condition sintered thick film resistance slurry with identical with the conductor sintering obtains thick-film resistor.
The evaluating characteristics of＜resistance 〉
(1) resistance value
Goods number 34401A with Agilent Technologies corporate system measures.Ask several 24 mean value of sample.
(2)TCR
As benchmark, obtain the resistance change rate of temperature when changing for-55 ℃ and 125 ℃ with 25 ℃ of room temperatures.Be several 10 mean value of sample.If-55 ℃, 25 ℃, 125 ℃ resistance value is R-55, R25, R125 (during Ω/), is TCR (ppm/ ℃)=[(R-55-R25)/R25/80] * 1000000 or TCP (ppm/ ℃)=[(R125-R25)/R25/100] * 1000000.Be the TCR value if numerical value is big among both.
(3) STOL (short time overload)
To thick-film resistor apply 5 second test voltage, obtain the resistance change before and after it.Be several 10 mean value of sample.Test voltage=2.5 * rated voltage, rated voltage=√ (R/4), R are resistance value (Ω/).For the resistance of the test voltage with calculating above the resistance value of 400V, test voltage is 400V.
＜sample 1～sample 29 〉
When making above-mentioned thick-film resistor paste, when using glass composition powder 1, as additive from BaTiO
3, select among Ag, the CuO to use, make resistance according to the record that above-mentioned resistance is made.In addition, in sample 21, use Cu
2O, replaced C uO.
＜sample 3～sample 36 〉
When making above-mentioned thick-film resistor paste, when using glass composition powder 2, as additive from BaTiO
3, select among Ag, the CuO to use, make resistance according to the record that above-mentioned resistance is made.In addition, in sample 32, use Cu
2O, replaced C uO.
Table 1 shows the composition and the evaluating characteristics result of the resistance composition of these each samples.In addition, the composition (quality %) of each composition of numeric representation in the table.In sample 10～sample 36 of suitably setting this resistance composition composition, obtain surpassing the high resistance of 10k Ω/, realize that simultaneously TCR ± 100ppm is with in interior, STOL ± 0.1%.In contrast, at BaTiO
3, Ag, CuO addition not in the sample 5～sample 9 of proper range, particularly the STOL value becomes big, for surpassing-1%.And, in the inappropriate sample 1～sample 4 of the ratio of conductive material and glass composition, the deterioration that also can see TCR and STOL.
Table 1
| Test piece number (Test pc No.) | Conductive material | Glass composition | BaTiO3 | Ag | CuO | R | TCR | STOL(ΔR) | ||
| Kind | Form | Kind | Form | |||||||
| 1 | CaRuO3 | *20 | 1 | 57 | 15 | 5 | 3 | 8.5M | ±467 | -0.02％ |
| 2 | CaRuO3 | *40 | 1 | 40 | 15 | 5 | 3 | 13.3k | ±903 | -0.05％ |
| 3 | CaRuO3 | 35 | 1 | *34 | 15 | 12 | 4 | 390k | ±98 | -5.60％ |
| 4 | CaRuO3 | 25 | 1 | *65 | 5 | 1 | 4 | 10.1M | ±348 | -6.89％ |
| 5 | CaRuO3 | 30 | 1 | 59 | *0 | 5 | 3 | 9.5k | ±45 | -3.98％ |
| 6 | CaRuO3 | 30 | 1 | 40 | *23 | 5 | 2 | 2.5M | ±251 | -1.56％ |
| 7 | CaRuO3 | 30 | 1 | 52 | 15 | *0 | 3 | 167k | ±447 | -3.60％ |
| 8 | CaRuO3 | 30 | 1 | 40 | 15 | *20 | 3 | 483k | ±50 | -5.78％ |
| 9 | CaRuO3 | 30 | 1 | 45 | 15 | 5 | *5 | 67k | ±78 | -8.90％ |
| 10 | CaRuO3 | 25 | 1 | 52 | 15 | 5 | 3 | 9.6M | ±80 | -0.08％ |
| 11 | CaRuO3 | 35 | 1 | 42 | 15 | 5 | 3 | 870k | ±76 | -0.05％ |
| 12 | CaRuO3 | 33 | 1 | 40 | 15 | 9 | 3 | 1.1M | ±56 | -0.02％ |
| 13 | CaRuO3 | 25 | 1 | 60 | 7 | 5 | 3 | 9.3M | ±94 | -0.04％ |
| 14 | CaRuO3 | 35 | 1 | 55 | 5 | 12 | 3 | 5.6M | ±84 | -0.03％ |
| 15 | CaRuO3 | 25 | 1 | 42 | 20 | 10 | 3 | 6.3M | ±56 | -0.05％ |
| 16 | CaRuO3 | 35 | 1 | 46 | 15 | 1 | 3 | 8.4M | ±67 | -0.08％ |
| 17 | CaRuO3 | 25 | 1 | 42 | 15 | 15 | 3 | 3.4M | ±80 | -0.03％ |
| 18 | CaRuO3 | 35 | 1 | 44 | 15 | 5 | 1 | 1.5M | ±60 | -0.02％ |
| 19 | CaRuO3 | 25 | 1 | 51 | 15 | 5 | 4 | 5.5M | ±86 | -0.03％ |
| 20 | CaRuO3 | 35 | 1 | 55 | 15 | 5 | 0 | 7.4M | ±98 | -0.01％ |
| 21 | CaRuO3 | 25 | 1 | 52 | 15 | 5 | 3(Cu2O) | 9.3M | ±80 | -0.09％ |
| 22 | RuO2 | 25 | 1 | 52 | 15 | 5 | 3 | 10.5k | ±86 | -0.06％ |
| 23 | RuO2 | 35 | 1 | 44 | 15 | 5 | 1 | 11.4k | ±82 | -0.05％ |
| 24 | SrRuO3 | 25 | 1 | 52 | 15 | 5 | 3 | 9.8M | ±80 | -0.06％ |
| 25 | SrRuO3 | 35 | 1 | 44 | 15 | 5 | 1 | 1.3M | ±70 | -0.04％ |
| 26 | BaRuO3 | 25 | 1 | 52 | 15 | 5 | 3 | 11.2M | ±85 | -0.02％ |
| 27 | BaRuO3 | 35 | 1 | 44 | 15 | 5 | 1 | 3.9M | ±88 | -0.02％ |
| 28 | Bi2Ru2O7 | 25 | 1 | 52 | 15 | 5 | 3 | 19.3M | ±50 | -0.06％ |
| 29 | Bi2Ru2O7 | 35 | 1 | 44 | 15 | 5 | 1 | 6.5M | ±80 | -0.05％ |
| 30 | CaRuO3 | 35 | 2 | 55 | 15 | 5 | 0 | 5.2M | ±46 | -0.01％ |
| 31 | CaRuO3 | 35 | 2 | 42 | 15 | 5 | 3 | 505k | ±22 | -0.01％ |
| 32 | CaRuO3 | 25 | 2 | 52 | 15 | 5 | 3(Cu2O) | 8.6M | ±90 | -0.05％ |
| 33 | RuO2 | 35 | 2 | 55 | 15 | 5 | 0 | 19.3k | ±85 | -0.09％ |
| 34 | SrRuO3 | 35 | 2 | 55 | 15 | 5 | 0 | 11.9M | ±95 | -0.05％ |
| 35 | BaRuO3 | 35 | 2 | 55 | 15 | 5 | 0 | 15.6M | ±90 | -0.03％ |
| 36 | Bi2Ru2O7 | 35 | 2 | 55 | 15 | 5 | 0 | 20.2M | ±83 | -0.04％ |
＜sample 37～sample 56 〉
When making above-mentioned thick-film resistor paste, when using glass composition powder 1, as additive from CaTiO
3, select among Ag, the CuO to use, make resistance according to the record that above-mentioned resistance is made.
＜sample 57～sample 58 〉
When making above-mentioned thick-film resistor paste, when using glass composition powder 2, from CaTiO3, Ag, CuO, select to use as additive, make the record of item according to above-mentioned resistance and make resistance.
＜sample 59～sample 60 〉
When making above-mentioned thick-film resistor paste, when using glass composition powder 2, as additive from SrTiO
3, select among Ag, the CuO to use, make resistance according to the record that above-mentioned resistance is made.
Table 2 shows the composition and the evaluating characteristics result of the resistance composition of these each samples.The composition (quality %) of each composition of numeric representation in the table.Suitably setting in the sample 46～sample 60 of resistance composition composition, obtain the almost high resistance in 5k Ω/～500k Ω/ scope, realize that simultaneously TCR ± 100ppm is with in interior, STOL ± 0.1%.In contrast, at CaTiO
3, SrTiO
3, Ag, CuO addition not in the sample 41～sample 45 of proper range, TCR surpasses ± 100ppm, STOL surpass-1%, value is big.And, in the inappropriate sample 37～sample 40 of the ratio of conductive material and glass composition, the deterioration that also can see TCR and STOL.
Table 2
| Test piece number (Test pc No.) | Conductive material | Glass composition | CaTiO3 | SrTiO3 | Ag | CuO | R | TCR | STOL(ΔR) | ||
| Kind | Form | Kind | Form | ||||||||
| 37 | CaRuO3 | *10 | 1 | 65 | 15 | 0 | 5 | 5 | 508k | ±389 | -0.03％ |
| 38 | CaRuO3 | *35 | 1 | 50 | 5 | 0 | 5 | 5 | 4k | ±705 | -3.98％ |
| 39 | CaRuO3 | 30 | 1 | *45 | 15 | 0 | 5 | 5 | 5k | ±290 | -3.83％ |
| 40 | CaRuO3 | 15 | 1 | *70 | 5 | 0 | 5 | 5 | 580k | ±588 | -1.38％ |
| 41 | CaRuO3 | 30 | 1 | 60 | *0 | 0 | 5 | 5 | 34k | ±280 | -6.91％ |
| 42 | CaRuO3 | 20 | 1 | 50 | *20 | 0 | 5 | 5 | 490k | ±509 | -0.04％ |
| 43 | CaRuO3 | 30 | 1 | 50 | 15 | 0 | *0 | 5 | 205k | ±853 | -0.05％ |
| 44 | CaRuO3 | 15 | 1 | 50 | 5 | 0 | *25 | 5 | 17k | ±235 | -8.99％ |
| 45 | CaRuO3 | 20 | 1 | 50 | 15 | 0 | 5 | *10 | 2k | ±109 | -20.08％ |
| 46 | CaRuO3 | 15 | 1 | 60 | 15 | 0 | 5 | 5 | 451k | ±89 | -0.08％ |
| 47 | CaRuO3 | 30 | 1 | 55 | 5 | 0 | 5 | 5 | 22k | ±76 | -0.05％ |
| 48 | CaRuO3 | 30 | 1 | 50 | 15 | 0 | 5 | 5 | 34k | ±55 | -0.03％ |
| 49 | CaRuO3 | 15 | 1 | 65 | 10 | 0 | 5 | 5 | 280k | ±76 | -0.02％ |
| 50 | CaRuO3 | 29 | 1 | 60 | 1 | 0 | 5 | 5 | 13k | ±94 | -0.04％ |
| 51 | CaRuO3 | 29 | 1 | 50 | 15 | 0 | 1 | 5 | 53k | ±65 | -0.07％ |
| 52 | CaRuO3 | 25 | 1 | 54 | 15 | 0 | 1 | 5 | 338k | ±77 | -0.06％ |
| 53 | CaRuO3 | 15 | 1 | 50 | 10 | 0 | 20 | 5 | 4k | ±80 | -0.05％ |
| 54 | CaRuO3 | 25 | 1 | 55 | 15 | 0 | 5 | 0 | 88k | ±58 | -0.05％ |
| 55 | CaRuO3 | 29 | 1 | 60 | 5 | 0 | 5 | 1 | 5k | ±55 | -0.03％ |
| 56 | CaRuO3 | 25 | 1 | 53 | 12 | 0 | 5 | 5 | 4.3k | ±40 | -0.04％ |
| 57 | CaRuO3 | 15 | 2 | 60 | 15 | 0 | 5 | 5 | 109k | ±40 | -0.01％ |
| 58 | CaRuO3 | 29 | 2 | 60 | 1 | 0 | 5 | 5 | 5k | ±53 | -0.01％ |
| 59 | CaRuO3 | 15 | 2 | 60 | 0 | 15 | 5 | 5 | 110k | ±55 | -0.03％ |
| 60 | CaRuO3 | 29 | 2 | 60 | 0 | 1 | 5 | 5 | 7k | ±60 | -0.02％ |
＜sample 61～sample 118 〉
In sample 61～sample 118, use as glass composition contain MnO glass (glass composition powder 3 or glass composition powder 5) in, as additive from BaTiO
3, CaTiO
3, SrTiO
3, select among Ag, the CuO etc. to use, make resistance according to the record that above-mentioned resistance is made.In addition, in sample 80, use Cu
2O, replaced C uO.
Table 3 and table 4 show the composition and the evaluating characteristics result of the resistance composition of these each samples.The composition (quality %) of each composition of numeric representation in the table.Table 3 shows that the titanium oxide as alkaline-earth metal uses BaTiO
3The evaluation result of resistance, table 4 shows that the titanium oxide as alkaline-earth metal uses CaTiO
3Or SrTiO
3The evaluation result of resistance.
As known from Table 3, the titanium oxide as alkaline-earth metal uses BaTiO
3, in the sample 70～sample 92 of the composition of suitably setting resistance composition, obtain the following resistance value of 10 Ω/, realize that simultaneously TCR ± 100ppm is with in interior, STOL ± 0.1%.In contrast, at BaTiO
3, Ag, CuO addition not in the sample 65～sample 69 of proper range, TCR surpasses ± 100ppm, STOL surpass 1%, value is big.And, in the inappropriate sample 61～sample 64 of the ratio of conductive material and glass composition, the deterioration that also can see TCR and STOL.
In addition, as known from Table 4, as the titanium oxide use CaTiO of alkaline-earth metal
3Or SrTiO
3The time, also show and BaTiO
3Same result.
Table 3
| Test piece number (Test pc No.) | Conductive material | Glass composition | BaTiO3 | Ag | CuO | Other additives | R | TCR | STOL(ΔR) | |||
| Kind | Form | Kind | Form | Kind | Form | |||||||
| 61 | RuO2 | *55 | 3 | 25.6 | 0.2 | 18 | 1.2 | - | 0 | 3 | ±1097 | 2.20％ |
| 62 | RuO2 | *20 | 3 | 38.6 | 0.2 | 40 | 1.2 | - | 0 | 47 | ±860 | 2.90％ |
| 63 | RuO2 | 25 | 3 | *70.6 | 0.2 | 3 | 1.2 | - | 0 | 207 | ±801 | 3.70％ |
| 64 | RuO2 | 40 | 3 | *15.6 | 0.2 | 43 | 1.2 | - | 0 | 18 | ±367 | 1.80％ |
| 65 | RuO2 | 30 | 3 | 40.8 | *15 | 13 | 1.2 | - | 0 | 168 | ±590 | 2.60％ |
| 66 | RuO2 | 35 | 3 | 28.8 | *0 | 35 | 1.2 | - | 0 | 10 | ±106 | 3.90％ |
| 67 | RuO2 | 25 | 3 | 23.6 | 0.2 | *50 | 1.2 | - | 0 | 6 | ±911 | 2.40％ |
| 68 | RuO2 | 40 | 3 | 58.6 | 0.2 | *0 | 1.2 | - | 0 | 93 | ±765 | 1.30％ |
| 69 | RuO2 | 30 | 3 | 29.8 | 0.2 | 30 | *10 | - | 0 | 2 | ±1324 | 0％ |
| 70 | RuO2 | 35 | 3 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 9 | ±56 | 0％ |
| 71 | RuO2 | 25 | 3 | 23.8 | 5 | 45 | 1.2 | - | 0 | 33 | ±86 | 0％ |
| 72 | RuO2 | 45 | 3 | 23.8 | 5 | 25 | 1.2 | - | 0 | 5 | ±94 | 0％ |
| 73 | RuO2 | 50 | 3 | 28.8 | 0.2 | 20 | 1.2 | - | 0 | 4 | ±90 | 0％ |
| 74 | RuO2 | 45 | 3 | 20 | 0.2 | 33.5 | 1.2 | - | 0 | 8 | ±86 | 0％ |
| 75 | RuO2 | 30 | 3 | 65 | 0.2 | 3.6 | 1.2 | - | 0 | 27 | ±80 | 0％ |
| 76 | RuO2 | 40 | 3 | 38.8 | 10 | 10 | 1.2 | - | 0 | 34 | ±91 | 0％ |
| 77 | RuO2 | 40 | 3 | 31.8 | 0.2 | 20 | 8 | - | 0 | 9 | ±84 | 0％ |
| 78 | CaRuO3 | 38 | 3 | 53 | 6 | 1.5 | 1.5 | - | 0 | 111 | ±76 | 0％ |
| 79 | SrRuO3 | 38 | 3 | 53 | 6 | 1.5 | 1.5 | - | 0 | 105 | ±66 | 0％ |
| 80 | RuO2 | 35 | 3 | 31.6 | 0.2 | 32 | 1.2(Cu2O) | - | 0 | 8 | ±62 | 0％ |
| 81 | RuO2 | 35 | 3 | 29.6 | 0.2 | 32 | 1.2 | NiO | 2 | 13 | ±75 | 0％ |
| 82 | RuO2 | 35 | 3 | 29.6 | 0.2 | 32 | 1.2 | ZnO | 2 | 7 | ±85 | 0％ |
| 83 | RuO2 | 35 | 3 | 29.6 | 0.2 | 32 | 1.2 | Mn3O4 | 2 | 5 | ±89 | 0％ |
| 84 | RuO2 | 35 | 3 | 27.6 | 0.2 | 32 | 1.2 | NiO | 2 | 15 | ±80 | 0％ |
| ZnO | 2 | |||||||||||
| 85 | RuO2 | 35 | 3 | 27.6 | 0.2 | 32 | 1.2 | NiO | 2 | 21 | ±75 | 0％ |
| MnO2 | 2 | |||||||||||
| 86 | RuO2 | 35 | 3 | 27.6 | 0.2 | 32 | 1.2 | ZnO | 2 | 34 | ±88 | 0％ |
| MnO2 | 2 | |||||||||||
| 87 | BaRuO3 | 35 | 3 | 29.6 | 0.2 | 32 | 1.2 | Mn3O4 | 2 | 2006 | ±58 | 0％ |
| 88 | Bi2Ru2O7 | 35 | 3 | 29.6 | 0.2 | 32 | 1.2 | NiO | 2 | 3500 | ±70 | 0％ |
| 89 | RuO2 | 35 | 5 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 13 | ±74 | 0％ |
| 90 | SrRuO3 | 35 | 5 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 1098 | ±74 | 0％ |
| 91 | BaRuO3 | 35 | 5 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 2155 | ±80 | 0％ |
| 92 | Bi2Ru2O7 | 35 | 5 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 3920 | ±90 | 0％ |
Table 4
| Test piece number (Test pc No.) | Conductive material | Glass composition | CaTiO3 | SrTiO3 | Ag | CuO | R | TCR | STOL(ΔR) | ||
| Kind | Form | Kind | Form | ||||||||
| 93 | CaRuO3 | *55 | 3 | 25.6 | 0 | 0.2 | 18 | 1.2 | 1034 | ±1109 | 1.80％ |
| 94 | CaRuO3 | *20 | 3 | 38.6 | 0 | 0.2 | 40 | 1.2 | 578 | ±934 | 2.20％ |
| 95 | CaRuO3 | 25 | 3 | *70.6 | 0 | 0.2 | 3 | 1.2 | 55 | ±765 | 1.90％ |
| 96 | CaRuO3 | 40 | 3 | *15.6 | 0 | 0.2 | 43 | 1.2 | 774 | ±559 | 1.30％ |
| 97 | CaRuO3 | 30 | 3 | 40.8 | 0 | *15 | 13 | 1.2 | 2730 | ±1230 | 2.10％ |
| 98 | CaRuO3 | 35 | 3 | 28.8 | 0 | *0 | 35 | 1.2 | 408 | ±760 | 2.00％ |
| 99 | CaRuO3 | 25 | 3 | 23.6 | 0 | 0.2 | *50 | 1.2 | 410 | ±570 | 1.50％ |
| 100 | CaRuO3 | 40 | 3 | 58.6 | 0 | 0.2 | *0 | 1.2 | 289 | ±348 | 1.40％ |
| 101 | CaRuO3 | 30 | 3 | 24.8 | 0 | 0.2 | 30 | *15 | 500 | ±890 | 1.90％ |
| 102 | CaRuO3 | 25 | 3 | 43.8 | 0 | 0.2 | 30 | 1.2 | 289 | ±98 | 0％ |
| 103 | CaRuO3 | 50 | 3 | 38.5 | 0 | 0.2 | 10 | 1.2 | 824 | ±87 | 0％ |
| 104 | CaRuO3 | 40 | 3 | 20 | 0 | 0.2 | 38.6 | 1.2 | 170 | ±85 | 0％ |
| 105 | CaRuO3 | 25 | 3 | 65 | 0 | 0.2 | 8.6 | 1.2 | 450 | ±93 | 0％ |
| 106 | CaRuO3 | 40 | 3 | 23.8 | 0 | 10 | 25 | 1.2 | 167 | ±95 | 0％ |
| 107 | CaRuO3 | 30 | 3 | 23.6 | 0 | 0.2 | 45 | 1.2 | 431 | ±64 | 0％ |
| 108 | CaRuO3 | 40 | 3 | 58.5 | 0 | 0.2 | 0.1 | 1.2 | 553 | ±88 | 0％ |
| 109 | CaRuO3 | 30 | 3 | 41 | 0 | 1 | 26 | 8 | 354 | ±73 | 0％ |
| 110 | RuO2 | 35 | 3 | 31.6 | 0 | 0.2 | 32 | 1.2 | 10 | ±65 | 0％ |
| 111 | RuO2 | 35 | 3 | 33.6 | 0.2 | 0 | 30 | 1.2 | 16 | ±50 | 0％ |
| 112 | RuO2 | 35 | 5 | 31.6 | 0 | 0.2 | 32 | 1.2 | 13 | ±76 | 0％ |
| 113 | RuO2 | 35 | 5 | 31.6 | 0.2 | 0 | 32 | 1.2 | 7 | ±89 | 0.02％ |
| 114 | SrRuO3 | 35 | 5 | 31.6 | 0 | 0.2 | 32 | 1.2 | 1220 | ±66 | 0％ |
| 115 | BaRuO3 | 35 | 5 | 31.6 | 0 | 0.2 | 32 | 1.2 | 3820 | ±88 | 0％ |
| 116 | BaRuO3 | 35 | 5 | 31.6 | 0.2 | 0 | 32 | 1.2 | 3545 | ±75 | 0％ |
| 117 | Bi2Ru2O7 | 35 | 5 | 31.6 | 0 | 0.2 | 32 | 1.2 | 5908 | ±80 | 0％ |
| 118 | Bi2Ru2O7 | 35 | 5 | 31.6 | 0 | 0.2 | 32 | 1.2 | 5536 | ±76 | 0％ |
＜sample 119～sample 178 〉
In sample 119～sample 178, contain Ta using as the glass composition powder
2O
5In the time of glass (glass composition powder 4 or glass composition powder 6), as additive from BaTiO
3, CaTiO
3, SrTiO
3, select among Ag, the CuO etc. to use, make according to the record that above-mentioned resistance is made.In addition, in sample 138, use Cu
2O, replaced C uO.
Table 5 and table 6 show the composition and the evaluating characteristics result of the resistance composition of these each samples.In addition, the composition (quality %) of each composition of numeric representation in the table.The titanium oxide that is displayed in Table 5 as alkaline-earth metal uses BaTiO
3The evaluation result of resistance, the titanium oxide that is displayed in Table 6 as alkaline-earth metal uses CaTiO
3Or SrTiO
3The evaluation result of resistance.
As known from Table 5, suitably setting in the sample 128～sample 150 of resistance composition composition, obtaining the following resistance value of 10 Ω/, TCR, STOL also all obtain good result simultaneously.In contrast, at BaTiO
3, Ag, CuO addition not in the sample 123～sample 127 of proper range, TCR and STOL become big value.In addition, in the inappropriate sample 119～sample 122 of the ratio of conductive material and glass composition, the deterioration that also can see TCR and STOL.
In addition, as known from Table 6, as the titanium oxide use CaTiO of alkaline-earth metal
3Or SrTiO
3The time, also represent and BaTiO
3Same result.
As implied above, contain Ta even use
2O
5The occasion of glass (glass composition powder 4 or 6) also can obtain and contain the same result of MnO glass (glass composition powder 3 or 5).
Table 5
| Test piece number (Test pc No.) | Conductive material | Glass composition | BaTiO3 | Ag | CuO | Other additives | R | TCR | STOL(ΔR) | |||
| Kind | Form | Kind | Form | Kind | Form | |||||||
| 119 | RuO2 | *55 | 4 | 25.6 | 0.2 | 18 | 1.2 | - | 0 | 10 | ±785 | 1.20％ |
| 120 | RuO2 | *20 | 4 | 38.6 | 0.2 | 40 | 1.2 | - | 0 | 49 | ±680 | 2.60％ |
| 121 | RuO2 | 25 | 4 | *70.6 | 0.2 | 3 | 1.2 | - | 0 | 498 | ±573 | 1.80％ |
| 122 | RuO2 | 40 | 4 | *15.6 | 0.2 | 43 | 1.2 | - | 0 | 34 | ±200 | 2.00％ |
| 123 | RuO2 | 30 | 4 | 40.8 | *15 | 13 | 1.2 | - | 0 | 287 | ±491 | 1.30％ |
| 124 | RuO2 | 35 | 4 | 28.8 | *0 | 35 | 1.2 | - | 0 | 10 | ±230 | 2.40％ |
| 125 | RuO2 | 25 | 4 | 23.6 | 0.2 | *50 | 1.2 | - | 0 | 17 | ±1075 | 2.30％ |
| 126 | RuO2 | 40 | 4 | 58.6 | 0.2 | *0 | 1.2 | - | 0 | 114 | ±450 | 1.00％ |
| 127 | RuO2 | 30 | 4 | 29.8 | 0.2 | 30 | *10 | - | 0 | 5 | ±987 | 2.00％ |
| 128 | RuO2 | 35 | 4 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 34 | ±76 | 0％ |
| 129 | RuO2 | 25 | 4 | 23.8 | 5 | 45 | 1.2 | - | 0 | 67 | ±56 | 0％ |
| 130 | RuO2 | 45 | 4 | 23.8 | 5 | 25 | 1.2 | - | 0 | 18 | ±89 | 0％ |
| 131 | RuO2 | 50 | 4 | 37 | 1 | 10 | 2 | - | 0 | 9 | ±43 | 0％ |
| 132 | RuO2 | 45 | 4 | 20 | 3 | 31 | 1 | - | 0 | 11 | ±96 | 0％ |
| 133 | RuO2 | 25 | 4 | 65 | 5 | 2 | 3 | - | 0 | 77 | ±100 | 0％ |
| 134 | RuO2 | 30 | 4 | 39 | 10 | 20 | 1 | - | 0 | 154 | ±87 | 0％ |
| 135 | RuO2 | 30 | 4 | 40 | 2 | 20 | 8 | - | 0 | 8 | ±90 | 0％ |
| 136 | CaRuO3 | 38 | 4 | 53 | 6 | 1.5 | 1.5 | - | 0 | 432 | ±50 | 0％ |
| 137 | SrRuO3 | 38 | 4 | 53 | 6 | 1.5 | 1.5 | - | 0 | 515 | ±69 | 0％ |
| 138 | RuO2 | 35 | 4 | 31.6 | 0.2 | 32 | 1.2(Cu2O) | - | 0 | 24 | ±88 | 0％ |
| 139 | RuO2 | 35 | 4 | 29.6 | 0.2 | 32 | 1.2 | NiO | 2 | 42 | ±103 | 0％ |
| 140 | RuO2 | 35 | 4 | 29.6 | 0.2 | 32 | 1.2 | ZnO | 2 | 32 | ±111 | 0％ |
| 141 | RuO2 | 35 | 4 | 29.6 | 0.2 | 32 | 1.2 | Mn3O4 | 2 | 21 | ±80 | 0％ |
| 142 | RuO2 | 35 | 4 | 27.6 | 0.2 | 32 | 1.2 | NiO | 2 | 48 | ±45 | 0％ |
| ZnO | 2 | 32 | ||||||||||
| 143 | RuO2 | 35 | 4 | 27.6 | 0.2 | 32 | 1.2 | NiO | 2 | 19 | ±50 | 0％ |
| MnO2 | 2 | 33 | ||||||||||
| 144 | RuO2 | 35 | 4 | 27.6 | 0.2 | 32 | 1.2 | ZnO | 2 | 76 | ±52 | 0％ |
| MnO2 | 2 | 80 | ||||||||||
| 145 | RuO2 | 35 | 6 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 11 | ±60 | 0％ |
| 146 | SrRuO3 | 35 | 6 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 389 | ±70 | 0％ |
| 147 | BrRuO3 | 35 | 6 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 593 | ±75 | 0％ |
| 148 | BaRuO3 | 35 | 6 | 29.6 | 0.2 | 32 | 1.2 | ZnO | 2 | 418 | ±70 | 0％ |
| 149 | Bi2Ru2O7 | 35 | 6 | 31.6 | 0.2 | 32 | 1.2 | - | 0 | 743 | ±81 | 0％ |
| 150 | Bi2Ru2O7 | 35 | 6 | 29.6 | 0.2 | 32 | 1.2 | MnO2 | 2 | 587 | ±59 | 0％ |
Table 6
| Test piece number (Test pc No.) | Conductive material | Glass composition | CaTiO3 | SrTiO3 | Ag | CuO | R | TCR | STOL(ΔR) | ||
| Kind | Form | Kind | Form | ||||||||
| 151 | CaRuO3 | *55 | 4 | 25.6 | 0 | 0.2 | 18 | 1.2 | 3876 | ±887 | 1.50％ |
| 152 | CaRuO3 | *20 | 4 | 38.6 | 0 | 0.2 | 40 | 1.2 | 1875 | ±1232 | 1.80％ |
| 153 | CaRuO3 | 25 | 4 | *70.6 | 0 | 0.2 | 3 | 1.2 | 439 | ±759 | 2.50％ |
| 154 | CaRuO3 | 40 | 4 | *15.6 | 0 | 0.2 | 43 | 1.2 | 1090 | ±465 | 2.20％ |
| 155 | CaRuO3 | 30 | 4 | 40.8 | 0 | *15 | 13 | 1.2 | 5356 | ±870 | 1.30％ |
| 156 | CaRuO3 | 35 | 4 | 28.8 | 0 | *0 | 35 | 1.2 | 459 | ±1009 | 2.00％ |
| 157 | CaRuO3 | 25 | 4 | 23.6 | 0 | 0.2 | *50 | 1.2 | 879 | ±760 | 1.90％ |
| 158 | CaRuO3 | 40 | 4 | 58.6 | 0 | 0.2 | *0 | 1.2 | 400 | ±487 | 2.40％ |
| 159 | CaRuO3 | 30 | 4 | 24.8 | 0 | 0.2 | 30 | *15 | 703 | ±530 | 2.90％ |
| 160 | CaRuO3 | 25 | 4 | 43.8 | 0 | 0.2 | 30 | 1.2 | 590 | ±109 | 0％ |
| 161 | CaRuO3 | 50 | 4 | 38.6 | 0 | 0.2 | 10 | 1.2 | 1320 | ±66 | 0％ |
| 162 | CaRuO3 | 50 | 4 | 20 | 0 | 10 | 15 | 5 | 4670 | ±100 | 0％ |
| 163 | CaRuO3 | 21 | 4 | 65 | 0 | 7 | 5 | 2 | 7144 | ±98 | 0％ |
| 164 | CaRuO3 | 30 | 4 | 50 | 0 | 10 | 5 | 5 | 4007 | ±106 | 0％ |
| 165 | CaRuO3 | 37 | 4 | 45 | 0 | 3 | 10 | 8 | 1022 | ±74 | 0％ |
| 166 | CaRuO3 | 30 | 4 | 23.6 | 0 | 0.2 | 45 | 1.2 | 558 | ±116 | 0％ |
| 167 | CaRuO3 | 40 | 4 | 58.5 | 0 | 0.2 | 0.1 | 1.2 | 804 | ±109 | 0％ |
| 168 | CaRuO3 | 38 | 4 | 53 | 0 | 6 | 1.5 | 1.5 | 333 | ±80 | 0％ |
| 169 | SrRuO3 | 38 | 4 | 53 | 0 | 6 | 1.5 | 1.5 | 419 | ±75 | 0％ |
| 170 | RuO2 | 35 | 4 | 31.6 | 0 | 0.2 | 32 | 1.2 | 110 | ±88 | 0％ |
| 171 | RuO2 | 35 | 4 | 31.6 | 0.2 | 0 | 32 | 1.2 | 56 | ±76 | 0.04％ |
| 172 | RuO2 | 35 | 6 | 31.6 | 0 | 0.2 | 32 | 1.2 | 13 | ±72 | 0％ |
| 173 | RuO2 | 35 | 6 | 31.6 | 0.2 | 0 | 32 | 1.2 | 10 | ±90 | 0％ |
| 174 | SrRuO3 | 35 | 6 | 31.6 | 0 | 0.2 | 32 | 1.2 | 401 | ±56 | 0％ |
| 176 | BaRuO3 | 35 | 6 | 31.6 | 0 | 0.2 | 32 | 1.2 | 611 | ±76 | 0％ |
| 176 | BaRuO3 | 35 | 6 | 31.6 | 0.2 | 0 | 32 | 1.2 | 598 | ±55 | 0％ |
| 177 | Bi2Ru2O7 | 35 | 6 | 31.6 | 0 | 0.2 | 32 | 1.2 | 843 | ±50 | 0％ |
| 178 | Bi2Ru2O7 | 35 | 6 | 31.6 | 0.2 | 0 | 32 | 1.2 | 913 | ±76 | 0％ |
Claims (23)
1. thick-film resistor paste, the thick-film resistor paste for disperseing resistance composition to constitute in organic carrier is characterized in that,
Above-mentioned resistance composition contains RuO
2, the Ru composite oxides more than a kind or 2 kinds as conductive material, contain the titanium oxide and the metal material of glass composition, alkaline-earth metal simultaneously.
2. as the thick-film resistor paste of claim 1 record, it is characterized in that,
The titanium oxide of above-mentioned alkaline-earth metal is BaTiO
3, the composition of above-mentioned resistance composition is,
Conductive material: 25～35 quality %,
Glass composition: 35～60 quality %,
BaTiO
3: 0～20 quality %, but, do not contain 0,
Metal material: 0～15 quality %, but, do not contain 0.
3. as the thick-film resistor paste of claim 2 record, it is characterized in that above-mentioned metal material is Ag.
4. as the thick-film resistor paste of claim 2 or 3 records, it is characterized in that,, contain from CuO, Cu with the ratio below the 4 quality % as additive
2Select among the O more than a kind or 2 kinds.
5. as the thick-film resistor paste of claim 2 or 3 records, it is characterized in that above-mentioned glass composition is a CaO class glass composition.
6. as the thick-film resistor paste of claim 2 or 3 records, it is characterized in that above-mentioned glass composition contains NiO.
7. as the thick-film resistor paste of claim 2 or 3 records, it is characterized in that above-mentioned Ru composite oxides are from CaRuO
3, SrRuO
3, BaRuO
3, Bi
2Ru
2O
7More than a kind or 2 kinds of middle selection.
8. as the thick-film resistor paste of claim 1 record, it is characterized in that,
The titanium oxide of above-mentioned alkaline-earth metal is CaTiO
3, SrTiO
3More than a kind or 2 kinds, the composition of above-mentioned resistance composition is,
Conductive material: 15～30 quality %,
Glass composition: 50～65 quality %,
CaTiO
3, SrTiO
3More than a kind or 2 kinds: 0～15 quality %, but, do not contain 0,
Metal material: 0～20 quality %, but, do not contain 0.
9. as the thick-film resistor paste of claim 8 record, it is characterized in that above-mentioned metal material is Ag.
10. as the thick-film resistor paste of claim 8 or 9 records, it is characterized in that,, contain from CuO, Cu with the ratio below the 5 quality % as additive
2Select among the O more than a kind or 2 kinds.
11. the thick-film resistor paste as claim 8 or 9 records is characterized in that above-mentioned glass composition is a CaO class glass composition.
12. the thick-film resistor paste as claim 8 or 9 records is characterized in that above-mentioned glass composition contains NiO.
13. the thick-film resistor paste as claim 8 or 9 records is characterized in that above-mentioned Ru composite oxides are from CaRuO
3, SrRuO
3, BaRuO
3, Bi
2Ru
2O
7More than a kind or 2 kinds of middle selection.
14. the thick-film resistor paste as claim 1 record is characterized in that,
Above-mentioned glass composition contains from MnO, Ta
2O
5More than a kind or 2 kinds of middle selection, the titanium oxide of above-mentioned alkaline-earth metal is from BaTiO
3, CaTiO
3, SrTiO
3In select more than a kind or 2 kinds, the composition of above-mentioned resistance composition is,
Conductive material: 25～50 quality %,
Glass composition: 20～65 quality %,
From BaTiO
3, CaTiO
3, SrTiO
3More than a kind or 2 kinds of middle selection: 0～10 quality %, but, do not contain 0,
Metal material: 0～45 quality %, but, do not contain 0.
15. the thick-film resistor paste as claim 14 record is characterized in that above-mentioned metal material is Ag.
16. the thick-film resistor paste as claim 14 or 15 records is characterized in that, as additive, contains from CuO, Cu with the ratio below the 8 quality %
2Select among the O more than a kind or 2 kinds.
17. the thick-film resistor paste as claim 14 or 15 records is characterized in that, as additive, contains from NiO, ZnO, MnO with the ratio below the 5 quality %
2, Mn
3O
4More than a kind or 2 kinds of middle selection.
18. the thick-film resistor paste as claim 14 or 15 records is characterized in that above-mentioned glass composition is CaO class glass composition or SrO class glass composition.
19. the thick-film resistor paste as claim 14 or 15 records is characterized in that above-mentioned Ru composite oxides are from CaRuO
3, SrRuO
3, BaRuO
3, Bi
2Ru
2O
7More than a kind or 2 kinds of middle selection.
20. a thick-film resistor is characterized in that, with the thick-film resistor paste formation of each record in the claim 1,2,3,8,9,14,15.
21. the thick-film resistor as claim 20 record is characterized in that, with the thick-film resistor paste formation of claim 2 or 3 records, resistance value is 10k Ω/～25M Ω/.
22. the thick-film resistor as claim 20 record is characterized in that, with the thick-film resistor paste formation of claim 8 or 9 records, resistance value is 1k Ω/～500k Ω/.
23. the thick-film resistor as claim 20 record is characterized in that, with the thick-film resistor paste formation of claim 14 or 15 records, resistance value is below 10k Ω/.
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|---|---|---|---|
| JP2004254199 | 2004-09-01 | ||
| JP254199/04 | 2004-09-01 | ||
| JP067192/05 | 2005-03-10 |
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| CN100511496C CN100511496C (en) | 2009-07-08 |
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