CN102881388A - Barium strontium calcium titanate annular piezoresistor with copper alloy electrodes and preparation method thereof - Google Patents

Barium strontium calcium titanate annular piezoresistor with copper alloy electrodes and preparation method thereof Download PDF

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CN102881388A
CN102881388A CN2012103326193A CN201210332619A CN102881388A CN 102881388 A CN102881388 A CN 102881388A CN 2012103326193 A CN2012103326193 A CN 2012103326193A CN 201210332619 A CN201210332619 A CN 201210332619A CN 102881388 A CN102881388 A CN 102881388A
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copper alloy
sensitive resistor
ceramic substrate
annular voltage
barium strontium
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周水明
王学钊
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Guangzhou Newlife Magnet Electricity Co Ltd
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Abstract

The invention discloses an annular piezoresistor which comprises a ceramic substrate of the annular piezoresistor and three or more electrodes connected to the upper end surface, the lower end surface or the side surface of the ceramic substrate of the annular piezoresistor, wherein the ceramic substrate of the annular piezoresistor is made of barium strontium calcium titanate (BSCT), and the electrodes are copper alloy electrodes. By adopting the copper alloy electrodes, which have good wettability together with lead-free Sn-Cu solder wires, Sn-Ag solder wires and the like, the annular piezoresistor has ideal weldability and inoxidizability. In addition, the invention also discloses a preparation method of the annular piezoresistor.

Description

Copper alloy electrode barium strontium titanate annular voltage-sensitive resistor and preparation method thereof
Technical field
The invention belongs to the annular voltage-sensitive resistor preparation field, in particular, the present invention relates to a kind of with copper alloy as barium strontium titanate annular voltage-sensitive resistor of electrode and preparation method thereof.
Background technology
Annular voltage-sensitive resistor is mainly used on the electrical micro-machine, plays the effect that absorbs spark and abate the noise.Usually, annular voltage-sensitive resistor comprises ring resistance device ceramic substrate and the electrode more than three or three that is connected on the ring resistance device ceramic substrate, and electrode can be connected on upper surface, lower surface or the side of ring resistance device ceramic matrix.
At present, the electrode that uses on the annular voltage-sensitive resistor is mainly silver electrode, usually needs the two-layer silver slurry of printing, and wherein, bottom is ohm slurry, to guarantee the stability of voltage-dependent characteristic; The top layer is common silver slurry, to increase the weldability of silver electrode.
Because the key component Ag price of silver slurry is high, has brought very large cost pressure to producer, has limited to a great extent its extensive use.Therefore, industry begins to consider to replace silver electrode with the lower metal electrode of price such as the fine copper electrode.Adopt copper electrode to prepare annular voltage-sensitive resistor and not only can reduce production costs, and because copper slurry can be realized ohmic contact, technique is relatively simple in the process of silk-screen slurry.
At the end of the nineties in last century, Japanese TDK company has produced copper electrode strontium titanates annular voltage-sensitive resistor in batches, and its preparation method mainly adopts chemical plating, plating and heat treatment, still, does not provide concrete preparation parameter and complex process.In addition, in the application of reality, find: the easy oxidation of fine copper electrode, welding performance is relatively poor, and weld time is longer, causes the subsequent production cost to increase, and is unfavorable to the marketing of fine copper electrode annular voltage-sensitive resistor.
In view of this, necessaryly provide a kind of novel annular voltage-sensitive resistor, its electrode has good non-oxidizability and weldability.
Summary of the invention
The object of the invention is to: annular voltage-sensitive resistor of a kind of electrode with good oxidation resistance and weldability and preparation method thereof is provided.
In order to realize the foregoing invention purpose, the invention provides a kind of annular voltage-sensitive resistor, it comprises an annular voltage-sensitive resistor ceramic substrate and is connected in electrode on upper surface, lower surface or the side of annular voltage-sensitive resistor ceramic substrate more than three or three, wherein, the annular voltage-sensitive resistor ceramic substrate is made by barium strontium titanate, and electrode is copper alloy electrode.
A kind of improvement as annular voltage-sensitive resistor of the present invention, contain one or more in copper alloy and glass dust, silicate, boron oxide, the bismuth oxide in the described copper alloy electrode, wherein, the quality percentage composition of one or more in glass dust, silicate, boron oxide, the bismuth oxide is 2 ~ 28%, the quality percentage composition of copper alloy is 72 ~ 98%, is preferably 85 ~ 95%.
A kind of improvement as annular voltage-sensitive resistor of the present invention, described copper alloy is the alloy of one or more formation among Cu and Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni, wherein, the quality percentage composition of one or more among Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni is 0.1 ~ 40%, is preferably 0.5 ~ 30%.
In order to realize the foregoing invention purpose, the present invention also provides a kind of preparation method of annular voltage-sensitive resistor, and it may further comprise the steps:
(a) prepared the porcelain base of barium strontium titanate annular voltage-sensitive resistor by the barium strontium titanate porcelain;
(b) with the porcelain base that makes in the step (a) binder removal at high temperature;
(c) the porcelain base behind the binder removal that makes in the step (b) is reduced sintering in reducing atmosphere, make ceramic substrate;
(d) with the ceramic substrate that makes in the step (c) 700 ~ 1000 ℃ of lower oxidations;
(e) the copper alloy slurry is printed onto goes forward side by side dryly on the prepared ceramic substrate of step (d), form the copper alloy electrode pattern;
(f) with dried ceramic substrate burning infiltration copper alloy electrode in nitrogen or nitrogen and hydrogen mixture atmosphere, temperature is 600 ~ 900 ℃, makes copper alloy electrode barium strontium titanate annular voltage-sensitive resistor.
As a kind of improvement of the preparation method of annular voltage-sensitive resistor of the present invention, in the described step (b), the high temperature binder removal carries out under 1000 ~ 1300 ℃.
As a kind of improvement of the preparation method of annular voltage-sensitive resistor of the present invention, in the described step (c), reducibility gas is hydrogen or nitrogen and hydrogen mixture atmosphere, and the reduction sintering temperature is 1050 ~ 1450 ℃.
A kind of improvement as the preparation method of annular voltage-sensitive resistor of the present invention, in the described step (e), contain one or more in copper alloy and glass dust, silicate, boron oxide, the bismuth oxide in the copper alloy electrode, wherein, the quality percentage composition of one or more in glass dust, silicate, boron oxide, the bismuth oxide is 2 ~ 28%, the quality percentage composition of copper alloy is 72 ~ 98%, is preferably 85 ~ 95%.
A kind of improvement as the preparation method of annular voltage-sensitive resistor of the present invention, in the described step (e), copper alloy is the alloy of one or more formation among Cu and Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni, wherein, the quality percentage composition of one or more among Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni is 0.1 ~ 40%, is preferably 0.5 ~ 30%.
As a kind of improvement of the preparation method of annular voltage-sensitive resistor of the present invention, in the described step (e), the silk screen printing of copper alloy slurry is on ceramic substrate, and meshcount is 150 ~ 350, and baking temperature is 80 ~ 200 ℃, is preferably 100 ~ 150 ℃.
As a kind of improvement of the preparation method of annular voltage-sensitive resistor of the present invention, in the described step (a), barium strontium titanate porcelain base is by SrCO 3, BaCO 3, CaCO 3With TiO 2Batch mixing is behind 1000 ~ 1350 ℃ of lower synthetic barium strontium titanate powders, with Nb 2O 5, La 2O 3, Ta 2O 5In one or more materials and SiO 2, MnCO 3Mixing, drying, compacting form.
With respect to prior art, copper alloy electrode barium strontium titanate annular voltage-sensitive resistor of the present invention adopts copper alloy electrode, copper alloy electrode and unleaded Sn-Cu solder stick, Sn-Ag solder stick etc. have good wettability, the relative copper electrode of weldability is significantly improved: the relative copper electrode of welding temperature can reduce by 5 ~ 20 ℃, and welding efficiency can improve 10%.In addition, copper alloy has sintering under lower temperature, can realize better ohmic contact and better antioxygenic property, can prolong the useful life of annular voltage-sensitive resistor, and electrical property also can reach the level suitable with the silver electrode annular voltage-sensitive resistor.
Description of drawings
Below in conjunction with the drawings and specific embodiments, the present invention and useful technique effect thereof are elaborated, wherein:
Fig. 1 is the structural representation that copper alloy electrode is positioned at the barium strontium titanate ring varistor of end face.
Fig. 2 is the structural representation that copper alloy electrode is positioned at the barium strontium titanate ring varistor of side.
Wherein, 10 is barium strontium titanate annular voltage-sensitive ceramic substrate, and 20 is copper alloy electrode.
Embodiment
Below in conjunction with drawings and Examples, annular voltage-sensitive resistor of the present invention and preparation method thereof is elaborated.But, being understandable that, embodiments of the invention are not limited to this.
Embodiment 1
The first step is at first with SrCO 3, BaCO 3, CaCO 3With TiO 2In molar ratio 1:1 weighing mixes, at 1050 ℃ of lower synthetic barium strontium titanate powders, wherein, SrCO 3, BaCO 3And CaCO 3Mol ratio be (0.30 ~ 0.60): (0.20 ~ 0.50): (0.15 ~ 0.50);
Second step is with barium strontium titanate powder and the Nb that makes 2O 5, La 2O 3, Ta 2O 5In one or more and SiO 2, MnCO 3Be mixed together, dry, the porcelain base that makes the barium strontium titanate annular voltage-sensitive resistor, gained porcelain base carries out the high temperature binder removal under 1250 ℃, wherein, Nb 2O 5, La 2O 3, Ta 2O 5In the molar content of one or more materials be 0.1% ~ 5%, SiO 2With MnCO 3Molar content be respectively 0.02% ~ 7% and 0.01% ~ 3%;
The 3rd step, the porcelain base behind the binder removal is reduced sintering in reducing atmosphere, concrete grammar is to pass through NH 3Decompose the nitrogen and hydrogen mixture atmosphere that obtains, the reduction sintering temperature is 1400 ℃;
The 4th step produced voltage-sensitive effect in order to make potsherd, adopted the high temperature air stove at 850 ℃ the pottery behind the reduction sintering to be carried out oxidation processes;
The 5th step, adopt silk-screen printing technique to prepare the Cu-Sn alloy electrode, wherein, the prescription of Cu-Sn alloy pulp is as follows: the quality percentage composition of copper powder is 60%, the quality percentage composition of Sn powder is 5%, the quality percentage composition of B-Bi-Si glass frit is 8%, the quality percentage composition of ethyl cellulose is 2.5%, solvent is the terpinol of quality percentage composition 10% and 14.5% citric acid dibutyl ester, Cu-Sn alloy electrode slurry is adopted on the ceramic substrate after 200 purposes are screen-printed to oxidation, mode with one-step print is printed off 3 electrodes at the end face of barium strontium titanate annular voltage-sensitive ceramic substrate, and the potsherd that will be printed with afterwards the copper alloy electrode slurry carries out drying under 100 ℃;
The 6th step, with dried potsherd burning infiltration copper alloy electrode in nitrogen atmosphere, temperature is 650 ℃, make copper alloy electrode barium strontium titanate annular voltage-sensitive resistor of the present invention, its concrete structure comprises barium strontium titanate annular voltage-sensitive ceramic substrate 10 and the copper alloy electrode 20 that is connected on the barium strontium titanate annular voltage-sensitive ceramic substrate 10 as shown in Figure 1.According to other execution modes of the present invention, copper alloy electrode 20 also can be connected on the side of barium strontium titanate annular voltage-sensitive ceramic substrate 10, sees also shown in Figure 2.
Experiment detects proof, can be 320 ℃ of lower welding according to the copper alloy electrode barium strontium titanate annular voltage-sensitive resistor that embodiment 1 makes, be 0.5s the weld time of each electrode, and the annular voltage-sensitive resistor of copper electrode wants 340 ℃ just can reach same welded condition.
Embodiment 2
The first step: at first with SrCO 3, BaCO 3, CaCO 3With TiO 2In molar ratio 1:1 weighing batch mixing, at 1200 ℃ of lower synthetic barium strontium titanate powders, wherein, SrCO 3, BaCO 3And CaCO 3Mol ratio be (0.30 ~ 0.60): (0.20 ~ 0.50): (0.15 ~ 0.50);
Second step: adopt the porcelain base of barium strontium titanate preparation barium strontium titanate annular voltage-sensitive resistor, the porcelain base carries out the high temperature binder removal under 1150 ℃, wherein, and Nb 2O 5, La2O 3, Ta 2O 5In the molar content of one or more materials be 0.1% ~ 5%, SiO 2With MnCO 3Molar content be respectively 0.02% ~ 7% and 0.01% ~ 3%;
The 3rd step: the porcelain base behind the binder removal is reduced sintering in hydrogen atmosphere, sintering temperature is 1300 ℃;
The 4th step: produce voltage-sensitive effect for making potsherd, adopt the high temperature air stove at 880 ℃ the pottery behind the reduction sintering to be carried out oxidation processes;
The 5th step, adopt silk-screen printing technique to prepare Cu-brass alloys electrode, wherein, the prescription of Cu-brass alloys slurry is as follows: the quality percentage composition of copper powder is 50%, the quality percentage composition of brass powder is 20%, the quality percentage composition of B-Bi-Si glass frit is 5%, the quality percentage composition of ethyl cellulose is 3%, solvent is the terpineol of quality percentage composition 10% and 12% diethylene glycol butyl ether, the copper alloy electrode slurry is adopted on the ceramic substrate after 250 purposes are screen-printed to oxidation, adopt the mode of twice printing to print off 5 electrodes at the end face of barium strontium titanate annular voltage-sensitive ceramic substrate, the potsherd that is printed with the copper alloy electrode slurry is carried out drying under 120 ℃;
In the 6th step, with dried potsherd burning infiltration copper alloy electrode in the nitrogen and hydrogen mixture atmosphere, temperature is 750 ℃, makes the embodiment of the invention 2 copper alloy electrode barium strontium titanate annular voltage-sensitive resistors.
Embodiment 3
The first step is at first with SrCO 3, BaCO 3, CaCO 3With TiO 2In molar ratio 1:1 weighing batch mixing, at 1320 ℃ of lower synthetic barium strontium titanate powders, wherein, SrCO 3, BaCO 3And CaCO 3Mol ratio be (0.30 ~ 0.60): (0.20 ~ 0.50): (0.15 ~ 0.50);
Second step, the porcelain base of employing barium strontium titanate preparation barium strontium titanate annular voltage-sensitive resistor, gained porcelain base carries out the high temperature binder removal under 1080 ℃, wherein, Nb 2O 5, La 2O 3, Ta 2O 5In the molar content of one or more materials be 0.1% ~ 5%, SiO 2With MnCO 3Molar content be respectively 0.02% ~ 7% and 0.01% ~ 3%;
The 3rd step, the porcelain base behind the binder removal is reduced sintering in reducing atmosphere, concrete grammar is to pass through NH 3Decompose the nitrogen and hydrogen mixture atmosphere that obtains, the reduction sintering temperature is 1320 ℃;
The 4th step produced voltage-sensitive effect for making potsherd, adopted the high temperature air stove at 950 ℃ the pottery behind the reduction sintering to be carried out oxidation processes;
The 5th step, adopt silk-screen printing technique to prepare the Cu-Sn-Ag alloy electrode, wherein, the prescription of Cu-Sn-Ag alloy pulp is as follows: the quality percentage composition of copper powder is 58%, the quality percentage composition of Sn powder is 5%, the quality percentage composition of Ag powder is 2%, the quality percentage composition of B-Bi-Si glass frit is 10%, the quality percentage composition of ethyl cellulose is 3%, solvent is the terpineol of quality percentage composition 10% and 12% diethylene glycol butyl ether, the copper alloy electrode slurry is adopted on the ceramic substrate after 180 purposes are screen-printed to oxidation, adopt on the side that is printed on barium strontium titanate annular voltage-sensitive ceramic substrate for twice and print off 3 electrodes, the potsherd that will be printed on the copper alloy electrode slurry carries out drying under 140 ℃;
In the 6th step, with dried potsherd burning infiltration copper alloy electrode in nitrogen atmosphere, temperature is 720 ℃, makes copper alloy electrode barium strontium titanate annular voltage-sensitive resistor.
After testing, with respect to prior art, copper alloy electrode barium strontium titanate annular voltage-sensitive resistor of the present invention adopts copper alloy electrode, copper alloy electrode and unleaded Sn-Cu solder stick, Sn-Ag solder stick etc. have good wettability, the relative copper electrode of weldability is significantly improved: the relative copper electrode of welding temperature can reduce by 5 ~ 20 ℃, and welding efficiency can improve approximately 10%.
In addition, copper alloy can be under lower temperature sintering, can realize better ohmic contact (as shown in the table, only compare with embodiment 1 copper alloy electrode and fine copper electrode in the table, embodiment 2,3 copper alloy electrodes and embodiment 1 copper alloy electrode are similar, repeat no more).The copper electrode sample is placed existing slight oxidation in 10 days under the normal temperature state, and the copper alloy electrode sample is placed 30 days still non-oxidation phenomenons, therefore, copper alloy electrode has better antioxygenic property, can prolong the useful life of annular voltage-sensitive resistor, electrical property also can reach the level suitable with the silver electrode annular voltage-sensitive resistor.
Figure BDA00002114759400071
The according to the above description announcement of book and instruction, those skilled in the art in the invention can also carry out suitable change and modification to above-mentioned execution mode.Therefore, the embodiment that discloses and describe above the present invention is not limited to also should fall in the protection range of claim of the present invention modifications and changes more of the present invention.In addition, although used some specific terms in this specification, these terms do not consist of any restriction to the present invention just for convenience of description.

Claims (10)

1. annular voltage-sensitive resistor, comprise an annular voltage-sensitive resistor ceramic substrate and be connected in electrode on upper surface, lower surface or the side of annular voltage-sensitive resistor ceramic substrate more than three or three, it is characterized in that: described annular voltage-sensitive resistor ceramic substrate is made by barium strontium titanate, and described electrode is copper alloy electrode.
2. annular voltage-sensitive resistor according to claim 1, it is characterized in that: contain one or more in copper alloy and glass dust, silicate, boron oxide, the bismuth oxide in the described copper alloy electrode, wherein, the quality percentage composition of one or more in glass dust, silicate, boron oxide, the bismuth oxide is 2 ~ 28%, the quality percentage composition of copper alloy is 72 ~ 98%, is preferably 85 ~ 95%.
3. annular voltage-sensitive resistor according to claim 2, it is characterized in that: described copper alloy is the alloy of one or more formation among Cu and Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni, wherein, the quality percentage composition of one or more among Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni is 0.1 ~ 40%, is preferably 0.5 ~ 30%.
4. the preparation method of an annular voltage-sensitive resistor is characterized in that, may further comprise the steps:
(a) prepared the porcelain base of barium strontium titanate annular voltage-sensitive resistor by the barium strontium titanate porcelain;
(b) with the porcelain base that makes in the step (a) binder removal at high temperature;
(c) the porcelain base behind the binder removal that makes in the step (b) is reduced sintering in reducing atmosphere, make ceramic substrate;
(d) with the ceramic substrate that makes in the step (c) 700 ~ 1000 ℃ of lower oxidations;
(e) the copper alloy slurry is printed onto on the prepared ceramic substrate of step (d) and drying, forms the copper alloy electrode pattern;
(f) with dried ceramic substrate burning infiltration copper alloy electrode in nitrogen or nitrogen and hydrogen mixture atmosphere, temperature is 600 ~ 900 ℃, makes copper alloy electrode barium strontium titanate annular voltage-sensitive resistor.
5. preparation method according to claim 4 is characterized in that, the high temperature binder removal in the described step (b) carries out under 1000 ~ 1300 ℃.
6. preparation method according to claim 4 is characterized in that, the reducibility gas in the described step (c) is hydrogen or nitrogen and hydrogen mixture atmosphere, and the reduction sintering temperature is 1050 ~ 1450 ℃.
7. preparation method according to claim 4, it is characterized in that, contain one or more in copper alloy and glass dust, silicate, boron oxide, the bismuth oxide in the copper alloy electrode in the described step (e), wherein, the quality percentage composition of one or more in glass dust, silicate, boron oxide, the bismuth oxide is 2 ~ 28%, the quality percentage composition of copper alloy is 72 ~ 98%, is preferably 85 ~ 95%.
8. preparation method according to claim 4, it is characterized in that, copper alloy in the described step (e) is the alloy of one or more formation among Cu and Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni, wherein, the quality percentage composition of one or more among Sn, Ag, Au, brass, bronze, Zn, Be, Al, the Ni is 0.1 ~ 40%, is preferably 0.5 ~ 30%.
9. preparation method according to claim 4 is characterized in that, in the described step (e), the silk screen printing of copper alloy slurry is on ceramic substrate, and meshcount is 150 ~ 350, and baking temperature is 80 ~ 200 ℃, is preferably 100 ~ 150 ℃.
10. each described preparation method in 9 according to claim 4 is characterized in that, in the described step (a), barium strontium titanate porcelain base is by SrCO 3, BaCO 3, CaCO 3With TiO 2Batch mixing is behind 1000 ~ 1350 ℃ of lower synthetic barium strontium titanate powders, with Nb 2O 5, La 2O 3, Ta 2O 5In one or more materials and SiO 2, MnCO 3Mixing, drying, compacting form.
CN2012103326193A 2012-09-07 2012-09-07 Barium strontium calcium titanate annular piezoresistor with copper alloy electrodes and preparation method thereof Pending CN102881388A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103319172A (en) * 2013-06-14 2013-09-25 广东风华高新科技股份有限公司 Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof
CN103319171A (en) * 2013-06-14 2013-09-25 广东风华高新科技股份有限公司 Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof
WO2015096932A1 (en) * 2013-12-24 2015-07-02 Epcos Ag Method for fabricating a varistor device and varistor device
WO2017041549A1 (en) * 2015-09-11 2017-03-16 成都铁达电子有限责任公司 Electrode material and electrode manufacturing method requiring low cost
CN106825559A (en) * 2017-01-07 2017-06-13 东莞易力禾电子有限公司 resistor copper electrode sintering process

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CN1629986A (en) * 2003-12-18 2005-06-22 广东风华高新科技集团有限公司 Copper electrode strontium titanate annular piezoresistor and method for making same
CN1706773A (en) * 2000-11-15 2005-12-14 Tdk株式会社 Voltage-dependent nonlinear resistor ceramic, voltage-dependent nonlinear resistor with the ceramic, and method of manufacturing voltage-dependent nonlinear resistor ceramic

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CN1706773A (en) * 2000-11-15 2005-12-14 Tdk株式会社 Voltage-dependent nonlinear resistor ceramic, voltage-dependent nonlinear resistor with the ceramic, and method of manufacturing voltage-dependent nonlinear resistor ceramic
JP2003209002A (en) * 2002-01-15 2003-07-25 Tdk Corp Ring varistor
CN1629986A (en) * 2003-12-18 2005-06-22 广东风华高新科技集团有限公司 Copper electrode strontium titanate annular piezoresistor and method for making same

Cited By (9)

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Publication number Priority date Publication date Assignee Title
CN103319172A (en) * 2013-06-14 2013-09-25 广东风华高新科技股份有限公司 Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof
CN103319171A (en) * 2013-06-14 2013-09-25 广东风华高新科技股份有限公司 Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof
CN103319172B (en) * 2013-06-14 2014-10-15 广东风华高新科技股份有限公司 Annular piezoresistor ceramic and preparation method thereof, and annular piezoresistor and preparation method thereof
WO2015096932A1 (en) * 2013-12-24 2015-07-02 Epcos Ag Method for fabricating a varistor device and varistor device
JP2017504967A (en) * 2013-12-24 2017-02-09 エプコス アクチエンゲゼルシャフトEpcos Ag Varistor device manufacturing method and varistor device
US9934892B2 (en) 2013-12-24 2018-04-03 Epcos Ag Method for fabricating a varistor device and varistor device
WO2017041549A1 (en) * 2015-09-11 2017-03-16 成都铁达电子有限责任公司 Electrode material and electrode manufacturing method requiring low cost
CN106531379A (en) * 2015-09-11 2017-03-22 成都铁达电子有限责任公司 Electrode material and low-cost electrode manufacturing method
CN106825559A (en) * 2017-01-07 2017-06-13 东莞易力禾电子有限公司 resistor copper electrode sintering process

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