JP2010123647A - Ceramics electronic component, and electronic apparatus using the same - Google Patents

Ceramics electronic component, and electronic apparatus using the same Download PDF

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JP2010123647A
JP2010123647A JP2008294123A JP2008294123A JP2010123647A JP 2010123647 A JP2010123647 A JP 2010123647A JP 2008294123 A JP2008294123 A JP 2008294123A JP 2008294123 A JP2008294123 A JP 2008294123A JP 2010123647 A JP2010123647 A JP 2010123647A
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electronic component
external electrode
ceramic electronic
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Tomohiro Fujita
知宏 藤田
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Panasonic Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To stabilize electrical connection between an external electrode and an internal electrode of a ceramics electronic component. <P>SOLUTION: This ceramics electronic component 8 includes a metal layer 14 formed between a side face of the internal electrode 11 having an end and the external electrode 12, and the external electrode 12 contains a resin and metal particles. The average particle diameter of the metal constituting the metal layer 14 is smaller than that of the metal constituting the external electrode 12, and the electrical connection between the external electrode 12 and the internal electrode 11 can be stabilized. Since the external electrode 12 containing the resin and the metal particles can be formed by being hardened at low temperature of 150-300°C, damage to the ceramics electronic component due to high temperature can be reduced while improving an electric characteristic between the internal electrode 11 and the external electrode 12. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、高周波用のセラミックス電子部品と、これを用いた電子機器に関するものである。   The present invention relates to a ceramic electronic component for high frequency and an electronic device using the same.

近年、携帯電話やワイヤレスLANなどで使用されるマイクロ波領域の電磁波を利用する通信技術の発展に伴い、セラミックス電子部品が、例えば、ノイズ除去フィルタとして高周波モジュールに搭載されている。図3に従来のセラミックス電子部品1の断面模式図を示す。   In recent years, with the development of communication technology using electromagnetic waves in the microwave region used in mobile phones and wireless LANs, ceramic electronic components are mounted on high-frequency modules as, for example, noise removal filters. FIG. 3 shows a schematic cross-sectional view of a conventional ceramic electronic component 1.

図3において、従来のセラミックス電子部品1は、セラミックスからなる複数の誘電体層2を積層して形成された誘電体3と、複数の誘電体層2の間に形成された内部電極4と、層状に露出した内部電極4の表面を被覆した内部メッキ層7と、内部電極4の端部を有する側面に形成された外部電極5と、その外部電極5の表面に形成された外部メッキ層6とを備える。更に、外部電極5は、金属粒子をエポキシ系の樹脂やポリイミド系の樹脂に混合分散して作製した樹脂系の導電性ペーストを使用し、この導電性ペーストを誘電体3の外面に塗布して150℃以上300℃以下の温度で硬化させたものである。   In FIG. 3, a conventional ceramic electronic component 1 includes a dielectric 3 formed by laminating a plurality of dielectric layers 2 made of ceramics, an internal electrode 4 formed between the plurality of dielectric layers 2, An internal plating layer 7 covering the surface of the internal electrode 4 exposed in layers, an external electrode 5 formed on the side surface having the end of the internal electrode 4, and an external plating layer 6 formed on the surface of the external electrode 5 With. Further, the external electrode 5 uses a resin-based conductive paste prepared by mixing and dispersing metal particles in an epoxy-based resin or a polyimide-based resin, and this conductive paste is applied to the outer surface of the dielectric 3. Cured at a temperature of 150 ° C. or higher and 300 ° C. or lower.

このように、従来のセラミックス電子部品1は、セラミックス電子部品1の側面に露出した内部電極4の露出面に無電解メッキにより内部メッキ層7を形成させることによって、外部電極5と内部電極4との電気的接続の安定化を図っていた。   As described above, the conventional ceramic electronic component 1 has the external electrode 5 and the internal electrode 4 formed by forming the internal plating layer 7 on the exposed surface of the internal electrode 4 exposed on the side surface of the ceramic electronic component 1 by electroless plating. The electrical connection of was aimed at stabilization.

なお、この出願に関する先行技術文献としては、例えば、下記特許文献1が知られている。
特開2000−306763号公報
As a prior art document related to this application, for example, the following Patent Document 1 is known.
JP 2000-306763 A

しかし、このような従来のセラミックス電子部品1は、内部電極4と外部電極5との電気的接続を向上するために、低温で形成可能な無電解メッキによって、層状に露出された内部電極4の露出面に内部メッキ層7を形成させた。その結果、メッキ液が、誘電体層2同士の界面、または内部電極4と誘電体層2との界面に侵入し、電気特性が悪化する問題があった。   However, in the conventional ceramic electronic component 1, in order to improve the electrical connection between the internal electrode 4 and the external electrode 5, the internal electrode 4 exposed in layers is formed by electroless plating that can be formed at a low temperature. An internal plating layer 7 was formed on the exposed surface. As a result, there is a problem that the plating solution enters the interface between the dielectric layers 2 or the interface between the internal electrode 4 and the dielectric layer 2 to deteriorate the electrical characteristics.

そこで本発明は、セラミックス電子部品の電気特性を向上することを目的とする。   Accordingly, an object of the present invention is to improve the electrical characteristics of ceramic electronic components.

上記目的を達成するために、本発明のセラミックス電子部品は、内部電極の端部を有する側面と外部電極との間に形成された金属層を備え、この金属層を構成する金属粒子の平均粒子径は、外部電極を構成する金属粒子の平均粒子径より小さいことを特徴とする。   In order to achieve the above object, a ceramic electronic component of the present invention includes a metal layer formed between a side surface having an end portion of an internal electrode and an external electrode, and an average particle of metal particles constituting the metal layer The diameter is smaller than the average particle diameter of the metal particles constituting the external electrode.

金属層の平均粒子径は外部電極の平均粒子径よりも小さいので、金属層と誘電体層との上記側面の反応表面積、及び金属層と内部電極の端面との反応表面積が広くなる。その結果、セラミックス電子部品を低温で焼成することができると共に、外部電極と内部電極との電気的接続の信頼性を高めることができる。   Since the average particle size of the metal layer is smaller than the average particle size of the external electrode, the reaction surface area of the side surface of the metal layer and the dielectric layer and the reaction surface area of the metal layer and the end surface of the internal electrode are increased. As a result, the ceramic electronic component can be fired at a low temperature, and the reliability of electrical connection between the external electrode and the internal electrode can be increased.

従って、従来の技術において、セラミックス電子部品の側面に露出した内部電極の表面に内部メッキ層を設ける際に、メッキ液が、内部電極と誘電体層の界面等に侵入し、セラミックス電子部品の電気特性を悪化させる問題を解決することができる。   Therefore, in the prior art, when an internal plating layer is provided on the surface of the internal electrode exposed on the side surface of the ceramic electronic component, the plating solution penetrates into the interface between the internal electrode and the dielectric layer, etc. The problem of deteriorating characteristics can be solved.

(実施の形態1)
以下、実施の形態1のセラミックス電子部品8について、図面を用いて説明する。
(Embodiment 1)
Hereinafter, the ceramic electronic component 8 according to the first embodiment will be described with reference to the drawings.

図1は、実施の形態1のセラミックス電子部品8の断面模式図である。セラミックス電子部品8は、セラミックスからなる複数の誘電体層9を積層して形成された誘電体10と、複数の誘電体層9の間に形成された内部電極11と、内部電極11に電気的に接続されると共に、誘電体10の外面に形成された外部電極12と、外部電極12の外面に形成されたメッキ層13と、内部電極11の端部を有する側面と外部電極12との界面に形成された金属層14とを備える。また、上記外部電極12は、樹脂と金属粒子とを含み、上記金属層14を構成する金属粒子の平均粒子径は、外部電極12を構成する金属粒子の平均粒子径より小さい。   FIG. 1 is a schematic cross-sectional view of a ceramic electronic component 8 according to the first embodiment. The ceramic electronic component 8 includes a dielectric 10 formed by laminating a plurality of dielectric layers 9 made of ceramics, an internal electrode 11 formed between the plurality of dielectric layers 9, and an electrical connection to the internal electrode 11. The external electrode 12 formed on the outer surface of the dielectric 10, the plating layer 13 formed on the outer surface of the external electrode 12, and the interface between the side surface having the end of the internal electrode 11 and the external electrode 12 And a metal layer 14 formed on the substrate. The external electrode 12 includes a resin and metal particles, and the average particle diameter of the metal particles constituting the metal layer 14 is smaller than the average particle diameter of the metal particles constituting the external electrode 12.

尚、このセラミックス電子部品8を搭載した電子機器は、外部電極12に接続されて復調機能やデコード機能等を有する半導体集積回路(図示せず)と、この半導体集積回路に接続されたスピーカ又は液晶画面等の再生部(図示せず)を備える。   The electronic device on which the ceramic electronic component 8 is mounted includes a semiconductor integrated circuit (not shown) connected to the external electrode 12 and having a demodulation function, a decoding function, etc., and a speaker or a liquid crystal connected to the semiconductor integrated circuit. A playback unit (not shown) such as a screen is provided.

誘電体層9は、Li2O、B23、及びZnO等が添加されたSi−アルカリ土類金属−La−O系のガラス成分にxBaO−yNd23−zTiO2−wBiO3等のフィラーを含ませたガラスセラミックスから構成されている。このガラスセラミックスは1000℃までの低温で焼結できる材質である。 The dielectric layer 9, Li 2 O, B 2 O 3, and Si- alkaline earth or the like is added ZnO metal -La-O-based xBaO-yNd 2 in glass components of O 3 -zTiO 2 -wBiO 3 etc. It is comprised from the glass ceramics which included the filler of this. This glass ceramic is a material that can be sintered at a low temperature up to 1000 ° C.

内部電極11は、例えば、AgやCuなどの高周波特性が優れた金属であり、容量やインダクタンス等の機能部品を構成する。   The internal electrode 11 is a metal having excellent high frequency characteristics such as Ag and Cu, and constitutes functional parts such as a capacity and an inductance.

外部電極12は、例えば、平均粒子径が1mm以上20mm以下のNi、Cu、Pd、Ag、Pt、Auのうち少なくとも一種以上の金属粒子をエポキシ樹脂やポリイミド樹脂等の合成樹脂に分散して硬化させた樹脂によって構成される。   For example, the external electrode 12 is cured by dispersing at least one kind of metal particles among Ni, Cu, Pd, Ag, Pt, and Au having an average particle diameter of 1 mm or more and 20 mm or less in a synthetic resin such as epoxy resin or polyimide resin. It is comprised by the made resin.

メッキ層13は、例えば、外部電極12の外面に半田喰われ防止の為に形成されたNi層と、このNi層の外面に半田濡れ性を向上する為に形成されたAu層、またはSn層から構成される。また、メッキ層13は、Ni層とAu層との間に界面の密着性を向上させるために形成されたPd層を有しても良い。   The plating layer 13 includes, for example, an Ni layer formed on the outer surface of the external electrode 12 to prevent solder erosion, and an Au layer or Sn layer formed on the outer surface of the Ni layer to improve solder wettability. Consists of Moreover, the plating layer 13 may have a Pd layer formed in order to improve adhesion at the interface between the Ni layer and the Au layer.

次に、金属層14について、図2を用いて詳述する。図2は、図1における破線で囲まれた領域15の拡大図である。この金属層14は、平均粒子径が4nm以上20nm以下のNi、Cu、Pd、Ag、Pt、Auのうち少なくとも一種以上である、金属粒子から形成されている。尚、その金属粒子の平均粒子径が4nm以上100nm以下でも同様の効果を得ることができる。金属層14の平均粒子径は外部電極12の平均粒子径よりも小さいので、金属層14と誘電体層9との上記側面の反応表面積、及び金属層14と内部電極11との端面との反応表面積が広くなる。その結果、セラミックス電子部品8を低温で焼成することができると共に、外部電極12と内部電極11の電気的接続の信頼性を高めることができる。   Next, the metal layer 14 will be described in detail with reference to FIG. FIG. 2 is an enlarged view of a region 15 surrounded by a broken line in FIG. The metal layer 14 is formed of metal particles that are at least one of Ni, Cu, Pd, Ag, Pt, and Au having an average particle diameter of 4 nm to 20 nm. In addition, the same effect can be acquired even if the average particle diameter of the metal particles is 4 nm or more and 100 nm or less. Since the average particle diameter of the metal layer 14 is smaller than the average particle diameter of the external electrode 12, the reaction surface area of the side surface of the metal layer 14 and the dielectric layer 9 and the reaction between the end surface of the metal layer 14 and the internal electrode 11. Increases surface area. As a result, the ceramic electronic component 8 can be fired at a low temperature, and the reliability of electrical connection between the external electrode 12 and the internal electrode 11 can be increased.

従って、従来の技術において、セラミックス電子部品1の側面に露出した内部電極4の表面に内部メッキ層7を設ける際に、メッキ液が、内部電極4と誘電体層2の界面等に侵入し、セラミックス電子部品1の電気特性を悪化させる問題を解決することができる。   Therefore, in the prior art, when the internal plating layer 7 is provided on the surface of the internal electrode 4 exposed on the side surface of the ceramic electronic component 1, the plating solution enters the interface between the internal electrode 4 and the dielectric layer 2, and the like. The problem of deteriorating the electrical characteristics of the ceramic electronic component 1 can be solved.

以下、本実施の形態1のセラミックス電子部品8の製造工程について説明する。   Hereinafter, the manufacturing process of the ceramic electronic component 8 of the first embodiment will be described.

第1成分は、誘電体層9を構成するガラスセラミックス作製の原料として、高純度(99重量%)のBaCO3、Nd23及びTiO2を用いる。ガラスセラミックスの組成をxBaO−yNd23−zTiO2で(x+y+z=100、x、y、zは各々モル比)で表した場合、13≦x≦17、13≦y≦17、68≦z≦72の組成範囲であることが好ましい。なお、ここでは希土類としてNd23を使用したがNd以外の酸化物であるLa23、Sm23等、他の希土類酸化物を使用してもよい。またNdの一部を他の希土類元素で置換することも可能である。上記粉末と純水とを、ボールミル中で18時間混合後、スラリーを乾燥し、アルミナ坩堝中、1200℃以上1400℃以下で2時間仮焼した。この仮焼粉末を解砕した後、ボールミルで粉砕、乾燥させ、第1成分の粉末とした。 As the first component, high-purity (99 wt%) BaCO 3 , Nd 2 O 3 and TiO 2 are used as raw materials for producing the glass ceramics constituting the dielectric layer 9. When the composition of the glass ceramic is expressed by xBaO-yNd 2 O 3 -zTiO 2 (x + y + z = 100, x, y, and z are molar ratios), 13 ≦ x ≦ 17, 13 ≦ y ≦ 17, 68 ≦ z A composition range of ≦ 72 is preferred. Although Nd 2 O 3 is used as the rare earth here, other rare earth oxides such as La 2 O 3 and Sm 2 O 3 which are oxides other than Nd may be used. It is also possible to substitute a part of Nd with another rare earth element. The powder and pure water were mixed in a ball mill for 18 hours, and then the slurry was dried and calcined in an alumina crucible at 1200 ° C. to 1400 ° C. for 2 hours. The calcined powder was crushed and then pulverized and dried with a ball mill to obtain a powder of the first component.

次に第2成分は、SiO2、H3BO3、Al(OH)3、MgO、BaCO3、CaCO3、SrCO3、La23、Li2CO3、ZnOのうち少なくとも1種からなる原料を用いた。原料の純度補正を行った後、所定の組成となるように称量した。これらの粉体をVブレンダーにより混合した後、白金または白金ロジウム坩堝に入れ、1400℃以上1600℃以下の温度で溶融し、ツインローラーにより急冷を行い、ガラスカレットを作製した。得られたガラスカレットをボールミルで8時間粉砕し、乾燥後、第2成分の粉末とした。上記第1成分の仮焼粉末に、第2成分のガラス粉末および酸化物の焼結助剤粉末を添加、混合することで、1000℃以下の低温域で焼結可能なガラスセラミックス粉末を得ることができる。添加したガラス粉末は、SiO2−B23−RO−La23系ガラス(Rはアルカリ土類金属)であり、SiO2が33重量%以上46重量%以下、B23が2重量%以上8重量%以下、RO(特にはBaO)が20重量%以上40重量%以下、La23が8重量%以上12重量%以下の組成であることが好ましい。上記以外にAl23、ZnO、アルカリ金属酸化物等を含有してもよい。なお、ここでは一例として上記ガラス組成系を示したが、これ以外の組成系のガラス粉末であっても、類似の効果が得られるものであれば使用可能である。 Next, the second component is composed of at least one of SiO 2 , H 3 BO 3 , Al (OH) 3 , MgO, BaCO 3 , CaCO 3 , SrCO 3 , La 2 O 3 , Li 2 CO 3 , and ZnO. The raw material was used. After correcting the purity of the raw material, it was named so as to have a predetermined composition. These powders were mixed by a V blender, put in a platinum or platinum rhodium crucible, melted at a temperature of 1400 ° C. or higher and 1600 ° C. or lower, and rapidly cooled by a twin roller to prepare a glass cullet. The obtained glass cullet was pulverized with a ball mill for 8 hours, dried, and used as the second component powder. A glass ceramic powder that can be sintered in a low temperature range of 1000 ° C. or lower is obtained by adding and mixing the second component glass powder and the oxide sintering aid powder to the first component calcined powder. Can do. The added glass powder is SiO 2 —B 2 O 3 —RO—La 2 O 3 glass (R is an alkaline earth metal), SiO 2 is 33 wt% or more and 46 wt% or less, and B 2 O 3 is It is preferable that the composition is 2 to 8% by weight, RO (particularly BaO) is 20 to 40% by weight, and La 2 O 3 is 8 to 12% by weight. In addition to the above, Al 2 O 3 , ZnO, alkali metal oxides and the like may be contained. In addition, although the said glass composition type | system | group was shown here as an example, even if it is a glass powder of a composition type | system | group other than this, if a similar effect is acquired, it can be used.

上記第1成分、第2成分よりなる混合粉砕粉末にポリビニルブチラールやアクリル樹脂等のバインダ、ジブチルフタレート等の可塑剤、および有機溶剤を加えて、混合、分散してスラリーとし、ドクターブレード法やダイコーティング法等によりPETフィルム等のベースフィルム上に前記スラリーを塗布することで誘電体層9となるセラミックスグリーンシートを作製した。上記セラミックスグリーンシート上にAgペーストをスクリーン印刷して所望の電極パターンを形成し、これらを所望枚数積層、熱圧着することで内層もしくは表層に内部電極11となる電極パターンを有するグリーンシート積層体を得た。この積層体を切断により個片化し、これを900℃以上940℃以下で焼成することによって、寸法が横2.0mm、縦1.25mm、厚み0.8mmの誘電体10を作製した。   Add a binder such as polyvinyl butyral or acrylic resin, a plasticizer such as dibutyl phthalate, and an organic solvent to the mixed pulverized powder composed of the first component and the second component, and mix and disperse to obtain a slurry. A ceramic green sheet to be the dielectric layer 9 was produced by applying the slurry onto a base film such as a PET film by a coating method or the like. On the ceramic green sheet, Ag paste is screen-printed to form a desired electrode pattern, and a desired number of these layers are laminated and thermocompression bonded to form a green sheet laminate having an electrode pattern that becomes the inner electrode 11 on the inner layer or surface layer. Obtained. The laminated body was cut into individual pieces and fired at 900 ° C. or higher and 940 ° C. or lower to produce a dielectric 10 having dimensions of 2.0 mm in width, 1.25 mm in length, and 0.8 mm in thickness.

この誘電体10において、内部電極11の端部を有する側面の全体に金属層14を形成する。その製造工程は、4nm以上20nm以下のAg金属粒子をバインダに分散させたAgペーストを用意し、ローラー転写の手法を用いて、上記Agペーストを内部電極11の端部を有する誘電体10の側面全体に塗布する。その後、150℃以上300℃以下で焼成を行い、金属粒子からなる金属層14が形成される。それにより、金属層14と誘電体層9との上記側面の反応表面積、及び金属層14と内部電極11の端面との反応表面積が広くなる。その結果、セラミックス電子部品8を低温で焼成することができると共に、外部電極12と内部電極11との電気的接続の信頼性を高めることができる。ここで、金属層14の金属粒子としてAgを使用したが平均粒子径が4nm以上20nm以下のAg以外の高融点金属Ni、Cu、Pd、Pt、またはAu等の金属粒子を使用しても良い。   In the dielectric 10, the metal layer 14 is formed on the entire side surface having the end of the internal electrode 11. The manufacturing process prepares an Ag paste in which Ag metal particles of 4 nm or more and 20 nm or less are dispersed in a binder, and uses the roller transfer technique to apply the Ag paste to the side surface of the dielectric 10 having the end of the internal electrode 11. Apply to the whole. Thereafter, firing is performed at 150 ° C. or more and 300 ° C. or less, and the metal layer 14 made of metal particles is formed. Thereby, the reaction surface area of the side surface of the metal layer 14 and the dielectric layer 9 and the reaction surface area of the metal layer 14 and the end surface of the internal electrode 11 are increased. As a result, the ceramic electronic component 8 can be fired at a low temperature, and the reliability of electrical connection between the external electrode 12 and the internal electrode 11 can be increased. Here, Ag is used as the metal particles of the metal layer 14, but metal particles such as refractory metals Ni, Cu, Pd, Pt, or Au other than Ag having an average particle diameter of 4 nm to 20 nm may be used. .

外部電極12は、平均粒子径が1mm以上20mm以下の、Ag、またはCuなどの金属粒子をエポキシ樹脂、またはポリイミド樹脂に混合分散して作った樹脂系の導電性ペーストを、空気中の150℃以上300℃以下で焼成することにより、金属層14を覆うようにその外面に形成される。そこで、外部電極12は、150℃以上300℃以下の低温で焼成できるので、高温焼成した場合に発生する内部電極11の金属が誘電体層9に拡散し、セラミックス電子部品8の電気特性を劣化する問題を解決することができる。   The external electrode 12 is a resin-based conductive paste made by mixing and dispersing metal particles such as Ag or Cu having an average particle diameter of 1 mm or more and 20 mm or less in an epoxy resin or a polyimide resin at 150 ° C. in air. By baking at 300 ° C. or lower, the metal layer 14 is formed on the outer surface so as to cover it. Therefore, since the external electrode 12 can be fired at a low temperature of 150 ° C. or more and 300 ° C. or less, the metal of the internal electrode 11 generated when firing at a high temperature diffuses into the dielectric layer 9 and deteriorates the electrical characteristics of the ceramic electronic component 8. Can solve the problem.

上記の工程にて得られた製品を、バレルメッキ槽にダミーボールと一緒に入れ、所定の前処理を行うことにより、脱脂、酸活性を行った。そして、これをNiメッキ浴に浸し、電解メッキによって外部電極12の外面にNiメッキ層を形成、その後、Snメッキ浴に浸し、電解メッキによってNiメッキ層の外面にSnメッキ層を形成し、最後に、Snの酸化を防止するため、第三リン酸Naによって酸化防止処理を行い、図1に示すセラミックス電子部品8を得た。   The product obtained in the above process was put in a barrel plating tank together with a dummy ball and subjected to a predetermined pretreatment to perform degreasing and acid activity. Then, this is immersed in a Ni plating bath, and an Ni plating layer is formed on the outer surface of the external electrode 12 by electrolytic plating. Thereafter, it is immersed in an Sn plating bath, and an Sn plating layer is formed on the outer surface of the Ni plating layer by electrolytic plating. Further, in order to prevent the oxidation of Sn, an anti-oxidation treatment was performed with sodium triphosphate to obtain a ceramic electronic component 8 shown in FIG.

本発明のセラミックス電子部品は、外部電極と内部電極との電気的接続の安定化を向上することができるという効果を有し、携帯電話等の電子機器において有用である。   The ceramic electronic component of the present invention has an effect of improving the stability of electrical connection between the external electrode and the internal electrode, and is useful in electronic devices such as mobile phones.

本発明の一実施形態におけるセラミックス電子部品の断面模式図1 is a schematic cross-sectional view of a ceramic electronic component according to an embodiment of the present invention. 本発明の一実施形態におけるセラミックス電子部品の金属層近傍の拡大模式図The enlarged schematic diagram of the metal layer vicinity of the ceramic electronic component in one Embodiment of this invention 先行例の一実施形態におけるセラミックス電子部品の断面模式図Cross-sectional schematic diagram of ceramic electronic component in one embodiment of the preceding example

符号の説明Explanation of symbols

8 セラミックス電子部品
9 誘電体層
10 誘電体
11 内部電極
12 外部電極
13 メッキ層
14 金属層
8 Ceramic Electronic Components 9 Dielectric Layer 10 Dielectric 11 Internal Electrode 12 External Electrode 13 Plating Layer 14 Metal Layer

Claims (6)

セラミックスからなる複数の誘電体層を積層して形成された誘電体と、
前記複数の誘電体層の間に形成された内部電極と、
前記内部電極に電気的に接続されると共に、前記誘電体の外面に形成された外部電極と、
前記外部電極の外面に形成されたメッキ層と、
前記内部電極の端部を有する側面と前記外部電極との間に形成された金属層とを備え、
前記外部電極は樹脂と金属粒子とを含み、
前記金属層を構成する金属粒子の平均粒子径は、前記外部電極を構成する金属粒子の平均粒子径より小さいセラミックス電子部品。
A dielectric formed by laminating a plurality of dielectric layers made of ceramics;
An internal electrode formed between the plurality of dielectric layers;
An external electrode electrically connected to the internal electrode and formed on the outer surface of the dielectric;
A plating layer formed on the outer surface of the external electrode;
A metal layer formed between a side surface having an end of the internal electrode and the external electrode;
The external electrode includes a resin and metal particles,
A ceramic electronic component in which an average particle diameter of metal particles constituting the metal layer is smaller than an average particle diameter of metal particles constituting the external electrode.
前記金属層は、前記側面の全体に形成された請求項1に記載のセラミックス電子部品。 The ceramic electronic component according to claim 1, wherein the metal layer is formed on the entire side surface. 前記金属層は、Ni、Cu、Pd、Ag、Pt、Auのうち少なくとも一種以上である請求項1に記載のセラミックス電子部品。 The ceramic electronic component according to claim 1, wherein the metal layer is at least one of Ni, Cu, Pd, Ag, Pt, and Au. 前記樹脂は、エポキシ樹脂、ポリイミド樹脂のうち少なくとも一種以上である請求項1に記載のセラミックス電子部品。 The ceramic electronic component according to claim 1, wherein the resin is at least one of an epoxy resin and a polyimide resin. 前記金属粒子は、Ni、Cu、Pd、Ag、Pt、Auのうち少なくとも一種以上である請求項1に記載のセラミックス電子部品。 The ceramic electronic component according to claim 1, wherein the metal particles are at least one of Ni, Cu, Pd, Ag, Pt, and Au. 請求項1に記載のセラミックス電子部品と、
前記セラミックス電子部品の外部電極に接続された半導体集積回路と、前記半導体集積回路に接続された再生部とを備えた電子機器。
The ceramic electronic component according to claim 1;
An electronic apparatus comprising: a semiconductor integrated circuit connected to an external electrode of the ceramic electronic component; and a reproducing unit connected to the semiconductor integrated circuit.
JP2008294123A 2008-11-18 2008-11-18 Ceramics electronic component, and electronic apparatus using the same Pending JP2010123647A (en)

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CN105431917A (en) * 2013-08-13 2016-03-23 埃普科斯股份有限公司 Multilayer component comprising an external contact and method for producing a multilayer component comprising an external contact
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JP2016032091A (en) * 2014-07-25 2016-03-07 サムソン エレクトロ−メカニックス カンパニーリミテッド. Multilayer ceramic electronic component
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