JP2010114342A - Ceramics electronic component and electronic equipment using the same - Google Patents

Ceramics electronic component and electronic equipment using the same Download PDF

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JP2010114342A
JP2010114342A JP2008287324A JP2008287324A JP2010114342A JP 2010114342 A JP2010114342 A JP 2010114342A JP 2008287324 A JP2008287324 A JP 2008287324A JP 2008287324 A JP2008287324 A JP 2008287324A JP 2010114342 A JP2010114342 A JP 2010114342A
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resin
dielectric
electronic component
ceramic electronic
external electrode
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Tomohiro Fujita
知宏 藤田
Tetsuo Shimamura
徹郎 島村
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Panasonic Corp
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Panasonic Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To suppress deterioration in frequency characteristics of a ceramics electronic component. <P>SOLUTION: The ceramics electronic component 8 includes: a dielectric 10 formed by stacking a plurality of dielectric layers 9 made of ceramics; an internal electrode 11 formed among the plurality of dielectric layers 9; an external electrode 12 formed on an outer surface of the dielectric 10; plating 13 formed on an outer surface of the external electrode 12; and resin 14 formed on the interface between the external electrode 12 and the dielectric 10, or on the interface between the internal electrode 11 and the dielectric layer. The resin 14 includes fluorine-based functional groups. The above configuration can suppress penetration of plating liquids into the interface between the external electrode 12 and the dielectric 10 or that between the internal electrode 11 and the dielectric layer 9 in a plating liquid dipping process. More specifically, there can be suppressed the deterioration in the frequency characteristics of the ceramics electronic component 8 caused by the penetration of plating liquids into the interfaces. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は、各種電子機器に用いられるセラミックス電子部品とこれを用いた電子機器に関する。   The present invention relates to a ceramic electronic component used in various electronic devices and an electronic device using the same.

従来から、携帯通信用や近距離無線通信用の高周波モジュールにセラミックス電子部品が搭載されている。図3に従来のセラミックス電子部品の構成を示す。   Conventionally, ceramic electronic components are mounted on a high-frequency module for portable communication or near field communication. FIG. 3 shows the configuration of a conventional ceramic electronic component.

図3において、従来のセラミックス電子部品1は、セラミックスからなる複数の誘電体層1aを積層して形成された誘電体と、複数の誘電体層1a間に形成された内部電極2と、誘電体の外面に形成された外部電極3とを備える。   In FIG. 3, a conventional ceramic electronic component 1 includes a dielectric formed by laminating a plurality of dielectric layers 1a made of ceramics, an internal electrode 2 formed between the plurality of dielectric layers 1a, and a dielectric. And an external electrode 3 formed on the outer surface.

なお、この出願に関する先行技術文献としては、例えば、特許文献1が知られている。
特開平9−205005号公報
As a prior art document related to this application, for example, Patent Document 1 is known.
JP-A-9-205005

このようなセラミックス電子部品1において、内部電極2の端部と誘電体層1a同士の界面との間には、内部電極2の厚みによって非常に大きな空隙(図示せず)が生じやすい。これにより、セラミックス電子部品1に亀裂が入りやすくなるという深刻な問題があった。   In such a ceramic electronic component 1, a very large gap (not shown) tends to occur between the end of the internal electrode 2 and the interface between the dielectric layers 1 a due to the thickness of the internal electrode 2. Thereby, there was a serious problem that the ceramic electronic component 1 is easily cracked.

そこで本発明は、セラミックス電子部品の生産性を向上することを目的とする。   Therefore, an object of the present invention is to improve the productivity of ceramic electronic components.

上記目的を達成するために、本発明のセラミックス電子部品は、セラミックスからなる複数の誘電体層を積層して形成された誘電体と、これら複数の誘電体層間に形成された内部電極と、この内部電極に電気的に接続されると共に誘電体の外面に形成された外部電極と、内部電極の端部と複数の誘電体層同士の界面との間に形成された樹脂を備え、この樹脂の弾性率は、前記誘電体層の弾性率より小さいことを特徴とする。   In order to achieve the above object, a ceramic electronic component of the present invention includes a dielectric formed by laminating a plurality of dielectric layers made of ceramics, an internal electrode formed between the plurality of dielectric layers, An external electrode electrically connected to the internal electrode and formed on the outer surface of the dielectric; and a resin formed between the end of the internal electrode and the interface between the plurality of dielectric layers. The elastic modulus is smaller than the elastic modulus of the dielectric layer.

このように、上記空隙にセラミックスからなる誘電体層より弾性率の小さい、即ち誘電体層よりやわらかい樹脂を形成することにより、セラミックス電子部品に亀裂が入ることを抑制することができるのである。これにより、セラミックス電子部品の生産性を向上することができる。   Thus, by forming a resin having a smaller elastic modulus than the dielectric layer made of ceramics, that is, softer than the dielectric layer, the ceramic electronic component can be prevented from cracking. Thereby, the productivity of ceramic electronic components can be improved.

(実施の形態1)
以下、実施の形態1のセラミックス電子部品について、図面を用いて説明する。図1は、実施の形態1のセラミックス電子部品の断面模式図である。
(Embodiment 1)
Hereinafter, the ceramic electronic component of the first embodiment will be described with reference to the drawings. FIG. 1 is a schematic cross-sectional view of the ceramic electronic component of the first embodiment.

図1において、セラミックス電子部品8は、セラミックスからなる複数の誘電体層9を積層して形成された誘電体10と、複数の誘電体層9間に形成された内部電極11と、誘電体10の外面に形成された外部電極12と、外部電極12の外面に形成されたメッキ13と、外部電極12と誘電体10との界面、若しくは内部電極11と誘電体層9との界面に形成された樹脂14を備える。   In FIG. 1, a ceramic electronic component 8 includes a dielectric 10 formed by laminating a plurality of dielectric layers 9 made of ceramics, an internal electrode 11 formed between the plurality of dielectric layers 9, and a dielectric 10 The external electrode 12 formed on the outer surface of the electrode, the plating 13 formed on the outer surface of the external electrode 12, and the interface between the external electrode 12 and the dielectric 10 or the interface between the internal electrode 11 and the dielectric layer 9 are formed. Resin 14 is provided.

尚、このセラミックス電子部品8を搭載した電子機器(図示せず)は、外部電極12に接続されて復調機能やデコード機能等を有する半導体集積回路(図示せず)と、この半導体集積回路に接続されたスピーカ、液晶画面等の再生部(図示せず)を備える。   An electronic device (not shown) on which the ceramic electronic component 8 is mounted is connected to the semiconductor integrated circuit (not shown) connected to the external electrode 12 and having a demodulation function, a decoding function, and the like. And a reproducing unit (not shown) such as a speaker and a liquid crystal screen.

誘電体10は、ガラスセラミックスなど1000℃までの低温で焼結できる材質から成るが、ガラスセラミックス以外のセラミックス材料でも構わない。ガラスセラミックスは、低温で焼結が可能で、内部電極11としてAgやCuなどの高周波特性の優れた金属を用いることができるという長所がある。また、ビアや配線パターンなどの内部電極11により、共振器、コンデンサ、インダクタなどの機能部品が誘電体10の内部に三次元的に構成される。さらに、この機能部品は、外部電極12により外部に接続される。この誘電体10は、一般的に、均一な組成のものを用いるが、一部の層に他の層より誘電率の高いものや透磁率の大きいものを用いても良い。   The dielectric 10 is made of a material that can be sintered at a low temperature up to 1000 ° C., such as glass ceramics, but may be a ceramic material other than glass ceramics. Glass ceramics can be sintered at a low temperature, and has an advantage that a metal having excellent high-frequency characteristics such as Ag and Cu can be used as the internal electrode 11. In addition, functional parts such as a resonator, a capacitor, and an inductor are three-dimensionally formed inside the dielectric 10 by the internal electrodes 11 such as vias and wiring patterns. Further, this functional component is connected to the outside by the external electrode 12. The dielectric 10 generally has a uniform composition, but some layers may have a higher dielectric constant or a higher magnetic permeability than other layers.

外部電極12は、半田を用いてマザーボード(図示せず)に電気的に接続される。この外部電極12の材料として、例えば、AgやCuといった低抵抗導体を用いる。外部電極12がAgやCuの場合、外部電極12の半田喰われ(電極材の半田への溶出)を防止するために、外部電極12の表面にメッキ13が形成される。   The external electrode 12 is electrically connected to a mother board (not shown) using solder. As a material of the external electrode 12, for example, a low resistance conductor such as Ag or Cu is used. When the external electrode 12 is Ag or Cu, the plating 13 is formed on the surface of the external electrode 12 in order to prevent the external electrode 12 from being eroded by solder (elution of the electrode material into the solder).

このメッキ13は、例えば、外部電極12の外面に半田喰われ防止の為に形成されたNi層と、このNi層の外面に半田濡れ性向上の為に形成されたAu層、又はSn層を有する。また、メッキ13は、Ni層とAu層との間にNi層とAu層の界面密着性を向上させる為に形成されたPd層を有しても良い。   The plating 13 includes, for example, an Ni layer formed on the outer surface of the external electrode 12 for preventing solder erosion, and an Au layer or Sn layer formed on the outer surface of the Ni layer for improving solder wettability. Have. Further, the plating 13 may have a Pd layer formed between the Ni layer and the Au layer in order to improve the interface adhesion between the Ni layer and the Au layer.

樹脂14は、内部電極11の端部と複数の誘電体層9同士の界面との間の空隙16にも形成される。図2は、セラミックス電子部品8におけるある誘電体層9の上面図である。図2は、外部電極12等を省略している。この樹脂14は、例えば、シリコン系樹脂、エポキシ系樹脂、アクリル系樹脂、ポリブタジエン系樹脂、フェノール系樹脂、アミド系樹脂を主成分とし、この樹脂14の弾性率は、セラミックスからなる誘電体層9の弾性率より小さいことを特徴とする。   The resin 14 is also formed in the gap 16 between the end of the internal electrode 11 and the interface between the plurality of dielectric layers 9. FIG. 2 is a top view of a certain dielectric layer 9 in the ceramic electronic component 8. In FIG. 2, the external electrode 12 and the like are omitted. The resin 14 is mainly composed of, for example, a silicon resin, an epoxy resin, an acrylic resin, a polybutadiene resin, a phenol resin, or an amide resin. The elastic modulus of the resin 14 is the dielectric layer 9 made of ceramics. It is smaller than the elastic modulus.

図1、図2に示すように、内部電極11の端部と誘電体層9同士の界面との間には、内部電極11の厚みによって非常に大きな空隙16が生じやすい。これにより、セラミックス電子部品8に亀裂が入りやすくなるという深刻な問題があった。そこで空隙16にセラミックスからなる誘電体層9より弾性率の小さい、即ち誘電体層9よりやわらかい樹脂14を形成することにより、セラミックス電子部品8に亀裂が入ることを抑制することができるのである。これにより、セラミックス電子部品8の生産性を向上することができる。   As shown in FIGS. 1 and 2, a very large gap 16 is likely to be generated between the end of the internal electrode 11 and the interface between the dielectric layers 9 depending on the thickness of the internal electrode 11. Thereby, there was a serious problem that the ceramic electronic component 8 is easily cracked. Therefore, by forming a resin 14 having a smaller elastic modulus than that of the dielectric layer 9 made of ceramics, that is, softer than the dielectric layer 9, cracks in the ceramic electronic component 8 can be suppressed. Thereby, the productivity of the ceramic electronic component 8 can be improved.

また、樹脂14は、フッ素系の官能基を有することが望ましい。このフッ素系の官能基により、樹脂14の表面自由エネルギーが低下し、樹脂14の撥水性を向上させることができる。このフッ素系の官能基を有する樹脂14を、外部電極12と誘電体10との界面、若しくは内部電極11と誘電体層9との界面に形成することにより、メッキ液浸漬工程において外部電極12と誘電体10との界面、若しくは内部電極11と誘電体層9との界面にメッキ液が浸入することを抑制する。即ち、誘電体10と外部電極12の界面、若しくは誘電体層9と外部電極12の界面近傍では、誘電体層9と電極11・12との焼成収縮挙動の違いや熱膨張係数の差異から生じる残留応力が内在する為、樹脂14がなければ、誘電体10と外部電極12の界面若しくは誘電体層9と内部電極11の界面近傍がメッキ液に侵食され、フィルタ通過帯域が大きくシフトし、所定のフィルタ特性が得られなくなってしまう。そこで、上記界面にフッ素系の官能基を有する樹脂14を形成することにより、これらの界面の密着性を良好に保つことができ、メッキ浸漬工程におけるメッキ液の浸入から生じるフィルタ特性の悪化を防止することができるのである。即ち、外部電極12と誘電体10の界面、若しくは内部電極11と誘電体層9の界面へのメッキ液浸入によりセラミックス電子部品の周波数特性が劣化することを抑制することができるのである。   The resin 14 preferably has a fluorine-based functional group. By this fluorine-based functional group, the surface free energy of the resin 14 is lowered, and the water repellency of the resin 14 can be improved. By forming this fluororesin-containing resin 14 at the interface between the external electrode 12 and the dielectric 10, or the interface between the internal electrode 11 and the dielectric layer 9, the external electrode 12 The plating solution is prevented from entering the interface with the dielectric 10 or the interface between the internal electrode 11 and the dielectric layer 9. In other words, in the vicinity of the interface between the dielectric 10 and the external electrode 12 or in the vicinity of the interface between the dielectric layer 9 and the external electrode 12, the dielectric layer 9 and the electrodes 11 and 12 are caused by a difference in firing shrinkage and a difference in thermal expansion coefficient. Since the residual stress is inherent, if there is no resin 14, the interface between the dielectric 10 and the external electrode 12 or the vicinity of the interface between the dielectric layer 9 and the internal electrode 11 is eroded by the plating solution, and the filter pass band is greatly shifted. The filter characteristics cannot be obtained. Therefore, by forming the resin 14 having a fluorine-based functional group at the interface, it is possible to maintain good adhesion at these interfaces, and to prevent deterioration of the filter characteristics caused by the penetration of the plating solution in the plating immersion process. It can be done. That is, it is possible to suppress deterioration of the frequency characteristics of the ceramic electronic component due to the penetration of the plating solution into the interface between the external electrode 12 and the dielectric 10 or the interface between the internal electrode 11 and the dielectric layer 9.

以下、本実施の形態1のセラミックス電子部品8の製造方法について説明する。   Hereinafter, a method for manufacturing the ceramic electronic component 8 of the first embodiment will be described.

誘電体層9を構成する第1成分であるガラスセラミックス作製の原料として、高純度(99重量%)のBaCO、Nd、TiOを用いる。ガラスセラミックスの組成をxBaO−yNd−zTiOで(x+y+z=100、x、y、zは各々モル比)で表した場合、13≦x≦17、13≦y≦17、68≦z≦72の組成範囲であることが好ましい。なお、ここでは希土類としてNdを使用したが、La、Sm等、他の希土類酸化物を使用してもよい。またNdの一部を他の希土類元素で置換することも可能である。上記粉末と純水とを、ボールミル中で18時間混合後、スラリーを乾燥し、アルミナ坩堝中、1200〜1400℃で2時間仮焼した。この仮焼粉末を解砕した後、ボールミルで粉砕、乾燥させ、第1成分の粉末とした。 High purity (99 wt%) BaCO 3 , Nd 2 O 3 , and TiO 2 are used as a raw material for producing glass ceramics, which is the first component constituting the dielectric layer 9. When the composition of the glass ceramic is represented by xBaO-yNd 2 O 3 -zTiO 2 (x + y + z = 100, x, y, and z are molar ratios), 13 ≦ x ≦ 17, 13 ≦ y ≦ 17, 68 ≦ z A composition range of ≦ 72 is preferred. Here, Nd 2 O 3 is used as the rare earth, but other rare earth oxides such as La 2 O 3 and Sm 2 O 3 may be used. It is also possible to substitute a part of Nd with another rare earth element. The powder and pure water were mixed in a ball mill for 18 hours, and then the slurry was dried and calcined at 1200 to 1400 ° C. for 2 hours in an alumina crucible. The calcined powder was crushed and then pulverized and dried with a ball mill to obtain a powder of the first component.

次に第2成分として上記仮焼粉末に添加する助剤成分について述べる。上記仮焼粉末に、ガラスおよび酸化物の焼結助剤粉末を添加、混合することで、1000℃以下の低温域で焼結可能なガラスセラミックス粉末を得た。添加したガラス粉末は、SiO−B−RO−La系ガラス(Rはアルカリ土類金属)であり、SiOが33〜46重量%、Bが2〜8重量%、RO(特にはBaO)が20〜40重量%、Laが8〜12重量%の組成であることが好ましい。上記以外にAl、ZnO、アルカリ金属酸化物等を含有してもよい。なお、ここでは一例として上記ガラス組成系を示したが、これ以外の組成系のガラス粉末であっても、類似の効果が得られるものであれば使用可能である。 Next, the auxiliary component added to the calcined powder as the second component will be described. By adding and mixing a sintering aid powder of glass and oxide to the calcined powder, a glass ceramic powder that can be sintered in a low temperature range of 1000 ° C. or lower was obtained. Glass powder added is, SiO 2 -B 2 O 3 -RO -La 2 O 3 based glass (R is an alkaline earth metal) is, SiO 2 is 33-46 wt%, B 2 O 3 is 2-8 It is preferable that the composition is 20% by weight, RO (particularly BaO) is 20 to 40% by weight, and La 2 O 3 is 8 to 12% by weight. In addition to the above, Al 2 O 3 , ZnO, alkali metal oxides and the like may be contained. In addition, although the said glass composition type | system | group was shown here as an example, even if it is a glass powder of a composition type | system | group other than this, if a similar effect is acquired, it can be used.

上記第1成分、第2成分よりなる混合粉砕粉末にポリビニルブチラールやアクリル樹脂等のバインダ、ジブチルフタレート等の可塑剤、および有機溶剤を加えて、混合、分散してスラリーとし、ドクターブレード法やダイコーティング法等によりPETフィルム等のベースフィルム上に前記スラリーを塗布することで誘電体層9となるセラミックスグリーンシートを作製した。上記セラミックスグリーンシート上にAgペーストをスクリーン印刷して所望の電極パターンを形成し、これらを所望枚数積層、熱圧着することで内層もしくは表層に内部電極11となる電極パターンを有するグリーンシート積層体を得た。この積層体を切断により個片化し、これを900〜940℃で焼成することによって、寸法が横2.0mm、縦1.25mm、厚み0.8mmのセラミックス積層体を作製した。この両端部にローラー転写等の手法を用いて、Agペーストを塗布し、更に850〜920℃で焼成することにより、外部電極12を形成し、セラミックス積層部品を得た。   Add a binder such as polyvinyl butyral or acrylic resin, a plasticizer such as dibutyl phthalate, and an organic solvent to the mixed pulverized powder composed of the first component and the second component, and mix and disperse to obtain a slurry. A ceramic green sheet to be the dielectric layer 9 was produced by applying the slurry onto a base film such as a PET film by a coating method or the like. On the ceramic green sheet, Ag paste is screen-printed to form a desired electrode pattern, and a desired number of these layers are laminated and thermocompression bonded to form a green sheet laminate having an electrode pattern that becomes the inner electrode 11 on the inner layer or surface layer. Obtained. This laminate was cut into pieces and fired at 900 to 940 ° C. to produce a ceramic laminate having dimensions of 2.0 mm in width, 1.25 mm in length, and 0.8 mm in thickness. An Ag paste was applied to both ends using a method such as roller transfer, and further fired at 850 to 920 ° C. to form the external electrode 12 and obtain a ceramic laminated part.

次に、上記セラミックス積層部品を真空チャンバに入れて、セラミックス積層部品内部に存在する気泡を除去し、その後、オクタメチルシクロテトラシロキサンを含有したシリコン系樹脂からなる含浸材に浸した。そして、大気圧の10倍以上の圧力を掛けながらセラミックス積層部品にこの樹脂からなる含浸剤を充填することにより、セラミックス積層部品の隙間、特に、内部電極11の端部と複数の誘電体層9同士の界面との間の空隙16までこの含浸剤を充填し、含浸後、150度から250度の温度でこのセラミックス積層部品内部の含浸材を硬化させ、この後に、セラミックス積層部品の表面に残った含浸材を水洗乾燥、研磨等により除去した。   Next, the ceramic laminated part was put in a vacuum chamber to remove bubbles existing inside the ceramic laminated part, and then immersed in an impregnating material made of silicon-based resin containing octamethylcyclotetrasiloxane. Then, by applying the impregnating agent made of this resin to the ceramic laminated part while applying a pressure of 10 times or more of the atmospheric pressure, the gap between the ceramic laminated parts, in particular, the end portion of the internal electrode 11 and the plurality of dielectric layers 9 are filled. The impregnating agent is filled up to the gap 16 between the interfaces, and after the impregnation, the impregnating material inside the ceramic laminated part is cured at a temperature of 150 to 250 degrees, and then remains on the surface of the ceramic laminated part. The impregnated material was removed by washing and drying, polishing and the like.

このセラミックス積層部品を、バレルメッキ槽にダミーボールと一緒に入れ、所定の前処理を行うことにより、脱脂、酸活性を行った。そして、これをNiメッキ浴に浸し、電解メッキによって外部電極12の外面にNiメッキを形成、その後、Snメッキ浴に浸し、電解メッキによってNiメッキの外面にSnメッキを形成し、最後に、Snの酸化を防止するため、第三りん酸Naによって酸化防止処理を行い、図1に示すセラミックス電子部品8を得た。   This ceramic laminated part was put in a barrel plating tank together with a dummy ball and subjected to a predetermined pretreatment to perform degreasing and acid activity. Then, this is immersed in a Ni plating bath, and Ni plating is formed on the outer surface of the external electrode 12 by electrolytic plating. Thereafter, it is immersed in a Sn plating bath, and Sn plating is formed on the outer surface of the Ni plating by electrolytic plating. In order to prevent oxidation, an anti-oxidation treatment was performed with sodium triphosphate to obtain a ceramic electronic component 8 shown in FIG.

本発明にかかるセラミックス電子部品は、周波数特性の劣化が抑制されるという効果を有し、携帯電話等の電子機器において有用である。   The ceramic electronic component according to the present invention has an effect of suppressing deterioration of frequency characteristics, and is useful in an electronic device such as a mobile phone.

本発明の実施の形態1におけるセラミックス電子部品の断面模式図Sectional schematic diagram of the ceramic electronic component according to Embodiment 1 of the present invention. 同セラミックス電子部品における誘電体層の上面模式図Schematic top view of the dielectric layer in the ceramic electronic component 従来のセラミックス電子部品の断面模式図Cross-sectional schematic diagram of conventional ceramic electronic components

符号の説明Explanation of symbols

8 セラミックス電子部品
9 誘電体層
10 誘電体
11 内部電極
12 外部電極
13 メッキ
14 樹脂
8 Ceramic Electronic Components 9 Dielectric Layer 10 Dielectric 11 Internal Electrode 12 External Electrode 13 Plating 14 Resin

Claims (4)

セラミックスからなる複数の誘電体層を積層して形成された誘電体と、
前記複数の誘電体層間に形成された内部電極と、
前記内部電極に電気的に接続されると共に前記誘電体の外面に形成された外部電極と、
前記内部電極の端部と前記複数の誘電体層同士の界面との間に形成された樹脂を備え、
前記樹脂の弾性率は、前記誘電体層の弾性率より小さいセラミックス電子部品。
A dielectric formed by laminating a plurality of dielectric layers made of ceramics;
Internal electrodes formed between the plurality of dielectric layers;
An external electrode electrically connected to the internal electrode and formed on the outer surface of the dielectric;
Comprising a resin formed between an end of the internal electrode and an interface between the plurality of dielectric layers;
A ceramic electronic component in which the elastic modulus of the resin is smaller than the elastic modulus of the dielectric layer.
前記樹脂は、シリコン系樹脂、エポキシ系樹脂、アクリル系樹脂、ポリブタジエン系樹脂、フェノール系樹脂、アミド系樹脂の少なくとも一種以上である請求項1に記載のセラミックス電子部品。 2. The ceramic electronic component according to claim 1, wherein the resin is at least one of a silicon resin, an epoxy resin, an acrylic resin, a polybutadiene resin, a phenol resin, and an amide resin. 前記樹脂は、フッ素系の官能基を有する請求項1に記載のセラミックス電子部品。 The ceramic electronic component according to claim 1, wherein the resin has a fluorine-based functional group. 請求項1に記載のセラミックス電子部品と、
前記セラミックス電子部品の外部電極に接続された半導体集積回路と、
前記半導体集積回路に接続された再生部とを備えた電子機器。
The ceramic electronic component according to claim 1;
A semiconductor integrated circuit connected to an external electrode of the ceramic electronic component;
An electronic apparatus comprising a reproducing unit connected to the semiconductor integrated circuit.
JP2008287324A 2008-11-10 2008-11-10 Ceramics electronic component and electronic equipment using the same Pending JP2010114342A (en)

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Publications (1)

Publication Number Publication Date
JP2010114342A true JP2010114342A (en) 2010-05-20

Family

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Country Link
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