CN1628358A - 电荷注入方法 - Google Patents
电荷注入方法 Download PDFInfo
- Publication number
- CN1628358A CN1628358A CNA028272501A CN02827250A CN1628358A CN 1628358 A CN1628358 A CN 1628358A CN A028272501 A CNA028272501 A CN A028272501A CN 02827250 A CN02827250 A CN 02827250A CN 1628358 A CN1628358 A CN 1628358A
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- Prior art keywords
- programming
- volts
- memory cell
- bit
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000002347 injection Methods 0.000 title description 3
- 239000007924 injection Substances 0.000 title description 3
- 230000015654 memory Effects 0.000 claims abstract description 120
- 238000000034 method Methods 0.000 claims abstract description 96
- 230000009977 dual effect Effects 0.000 claims abstract description 15
- 238000003860 storage Methods 0.000 claims description 87
- 230000008859 change Effects 0.000 claims description 31
- 108010032595 Antibody Binding Sites Proteins 0.000 claims description 24
- 238000003491 array Methods 0.000 claims 1
- 230000000593 degrading effect Effects 0.000 abstract 1
- 239000000725 suspension Substances 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- 229920005591 polysilicon Polymers 0.000 description 13
- 230000000295 complement effect Effects 0.000 description 11
- 150000004767 nitrides Chemical class 0.000 description 11
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000008569 process Effects 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000004064 recycling Methods 0.000 description 6
- 230000005684 electric field Effects 0.000 description 5
- 238000013459 approach Methods 0.000 description 4
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- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 3
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- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000005689 Fowler Nordheim tunneling Effects 0.000 description 1
- 235000004240 Triticum spelta Nutrition 0.000 description 1
- 230000006399 behavior Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
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- 239000002784 hot electron Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
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- 101150018075 sel-2 gene Proteins 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
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Images
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
- G11C16/3409—Circuits or methods to recover overerased nonvolatile memory cells detected during erase verification, usually by means of a "soft" programming step
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5657—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using ferroelectric storage elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3436—Arrangements for verifying correct programming or erasure
- G11C16/344—Arrangements for verifying correct erasure or for detecting overerased cells
- G11C16/3445—Circuits or methods to verify correct erasure of nonvolatile memory cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/10—Programming or data input circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
Abstract
Description
作业 | 存储单元 | 栅极 | 位线0 | 位线1 | 注释 |
读取 | C0 | Vcc | 0伏 | 1.2伏 | 额外行 |
读取 | C1 | Vcc | 1.2伏 | 0伏 | 正常行 |
编程 | C0 | 9.25至9.5伏 | 5至5.5伏 | 0伏 | 热电子 |
编程 | C1 | 9.25至9.5伏 | 0伏 | 5至5.5伏 | 热电子 |
单端擦除 | C0 | -3至-6伏 | 5至6伏 | 浮接 | 热电子注入 |
单端擦除 | C1 | -3至-6伏 | 浮接 | 5至6伏 | 热电子注入 |
两端擦除 | C1,C0 | -3至-6伏 | 5至6伏 | 5至6伏 | 热电子注入 |
存储单元 | WL | A | B | C | sel0 | sel 1 | sel 2 | Sel 3 | BL 0 | BL 1 | BL 2 |
C0 | Vgate | H | L | x | L | H | L | L | GND | VD | X |
C1 | Vgate | L | H | x | L | H | L | L | VD | GND | X |
C2 | Vgate | H | L | x | H | L | L | L | GND | VD | X |
C3 | Vgate | L | H | x | H | L | L | L | VD | GND | X |
C4 | Vgate | x | H | L | L | L | L | H | X | GND | VD |
C5 | Vgate | x | L | H | L | L | L | H | X | VD | GND |
C6 | Vgate | x | H | L | L | L | H | L | X | GND | VD |
C7 | Vgate | x | L | H | L | L | H | L | X | VD | GND |
Claims (10)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/050,483 US6567303B1 (en) | 2001-01-31 | 2002-01-16 | Charge injection |
US10/050,483 | 2002-01-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1628358A true CN1628358A (zh) | 2005-06-15 |
CN100433193C CN100433193C (zh) | 2008-11-12 |
Family
ID=27609070
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNB028272501A Expired - Lifetime CN100433193C (zh) | 2002-01-16 | 2002-12-17 | 电荷注入方法 |
Country Status (8)
Country | Link |
---|---|
JP (1) | JP2005516330A (zh) |
KR (1) | KR20040071322A (zh) |
CN (1) | CN100433193C (zh) |
AU (1) | AU2002367512A1 (zh) |
DE (1) | DE10297641T5 (zh) |
GB (1) | GB2400709B (zh) |
TW (1) | TWI260639B (zh) |
WO (1) | WO2003063167A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809672B (zh) * | 2007-08-21 | 2014-03-19 | 美光科技公司 | 电荷损失补偿方法和设备 |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6967873B2 (en) * | 2003-10-02 | 2005-11-22 | Advanced Micro Devices, Inc. | Memory device and method using positive gate stress to recover overerased cell |
US7307878B1 (en) | 2005-08-29 | 2007-12-11 | Spansion Llc | Flash memory device having improved program rate |
US7957204B1 (en) | 2005-09-20 | 2011-06-07 | Spansion Llc | Flash memory programming power reduction |
US8358543B1 (en) | 2005-09-20 | 2013-01-22 | Spansion Llc | Flash memory programming with data dependent control of source lines |
US7433228B2 (en) | 2005-09-20 | 2008-10-07 | Spansion Llc | Multi-bit flash memory device having improved program rate |
KR100666223B1 (ko) * | 2006-02-22 | 2007-01-09 | 삼성전자주식회사 | 메모리셀 사이의 커플링 노이즈를 저감시키는 3-레벨불휘발성 반도체 메모리 장치 및 이에 대한 구동방법 |
CN111863086B (zh) * | 2019-04-29 | 2022-07-05 | 北京兆易创新科技股份有限公司 | 一种控制编程性能的方法和装置 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5675537A (en) * | 1996-08-22 | 1997-10-07 | Advanced Micro Devices, Inc. | Erase method for page mode multiple bits-per-cell flash EEPROM |
US5870335A (en) * | 1997-03-06 | 1999-02-09 | Agate Semiconductor, Inc. | Precision programming of nonvolatile memory cells |
US6768165B1 (en) * | 1997-08-01 | 2004-07-27 | Saifun Semiconductors Ltd. | Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping |
US6044022A (en) * | 1999-02-26 | 2000-03-28 | Tower Semiconductor Ltd. | Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays |
US6396741B1 (en) * | 2000-05-04 | 2002-05-28 | Saifun Semiconductors Ltd. | Programming of nonvolatile memory cells |
US6456533B1 (en) * | 2001-02-28 | 2002-09-24 | Advanced Micro Devices, Inc. | Higher program VT and faster programming rates based on improved erase methods |
US6307784B1 (en) * | 2001-02-28 | 2001-10-23 | Advanced Micro Devices | Negative gate erase |
US6512701B1 (en) * | 2001-06-21 | 2003-01-28 | Advanced Micro Devices, Inc. | Erase method for dual bit virtual ground flash |
-
2002
- 2002-12-17 DE DE10297641T patent/DE10297641T5/de not_active Withdrawn
- 2002-12-17 GB GB0417770A patent/GB2400709B/en not_active Expired - Fee Related
- 2002-12-17 JP JP2003562936A patent/JP2005516330A/ja active Pending
- 2002-12-17 CN CNB028272501A patent/CN100433193C/zh not_active Expired - Lifetime
- 2002-12-17 AU AU2002367512A patent/AU2002367512A1/en not_active Abandoned
- 2002-12-17 KR KR10-2004-7011031A patent/KR20040071322A/ko not_active Application Discontinuation
- 2002-12-17 WO PCT/US2002/040775 patent/WO2003063167A2/en active Application Filing
-
2003
- 2003-01-08 TW TW092100296A patent/TWI260639B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101809672B (zh) * | 2007-08-21 | 2014-03-19 | 美光科技公司 | 电荷损失补偿方法和设备 |
Also Published As
Publication number | Publication date |
---|---|
TWI260639B (en) | 2006-08-21 |
GB0417770D0 (en) | 2004-09-15 |
GB2400709B (en) | 2005-12-28 |
DE10297641T5 (de) | 2005-01-05 |
JP2005516330A (ja) | 2005-06-02 |
WO2003063167A3 (en) | 2003-12-04 |
CN100433193C (zh) | 2008-11-12 |
WO2003063167A2 (en) | 2003-07-31 |
GB2400709A (en) | 2004-10-20 |
KR20040071322A (ko) | 2004-08-11 |
AU2002367512A1 (en) | 2003-09-02 |
TW200302486A (en) | 2003-08-01 |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SPANSION CO.,LTD. Free format text: FORMER OWNER: ADVANCED MICRO DEVICES INC. Effective date: 20070413 Owner name: SPANSION CO., LTD. Free format text: FORMER OWNER: SPANSION CO.,LTD. Effective date: 20070413 |
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Effective date of registration: 20070413 Address after: California, USA Applicant after: Spanson Co. Address before: California, USA Applicant before: ADVANCED MICRO DEVICES, Inc. Effective date of registration: 20070413 Address after: California, USA Applicant after: SPANSION LLC Address before: California, USA Applicant before: Spanson Co. |
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Effective date of registration: 20160411 Address after: California, USA Patentee after: CYPRESS SEMICONDUCTOR Corp. Address before: California, USA Patentee before: SPANSION LLC |
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Granted publication date: 20081112 |