CN1626691A - 一种氧化铝弥散强化铜引线框架材料及制备方法 - Google Patents

一种氧化铝弥散强化铜引线框架材料及制备方法 Download PDF

Info

Publication number
CN1626691A
CN1626691A CNA200310119001XA CN200310119001A CN1626691A CN 1626691 A CN1626691 A CN 1626691A CN A200310119001X A CNA200310119001X A CN A200310119001XA CN 200310119001 A CN200310119001 A CN 200310119001A CN 1626691 A CN1626691 A CN 1626691A
Authority
CN
China
Prior art keywords
copper
frame material
powder
alumina dispersion
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA200310119001XA
Other languages
English (en)
Other versions
CN1276984C (zh
Inventor
闵家源
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Institute of Metal Research of CAS
Original Assignee
Institute of Metal Research of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Institute of Metal Research of CAS filed Critical Institute of Metal Research of CAS
Priority to CNB200310119001XA priority Critical patent/CN1276984C/zh
Publication of CN1626691A publication Critical patent/CN1626691A/zh
Application granted granted Critical
Publication of CN1276984C publication Critical patent/CN1276984C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01024—Chromium [Cr]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/157—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2924/15738—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950 C and less than 1550 C
    • H01L2924/15747—Copper [Cu] as principal constituent

Abstract

本发明涉及微电子封装用金属材料，具体公开一种氧化铝弥散强化铜引线框架铜合金材料及制备方法。在铜粉合金中添加重量百分比为0.2～0.3的铬粉及1～3的氧化铝粉，充分混合后球磨，并在氢气环境中进行还原处理，再冷压成型、烧结、挤压，最后进行热处理使合金获得弥散强化和沉淀强化的双重强化效果，从而获得高强高导铜合金。采用本发明进一步提高了氧化铝弥散强化铜引线框架材料的抗拉强度，适用于集成电路或大规模集成电路。

Description

一种氧化铝弥散强化铜引线框架材料及制备方法
技术领域
本发明涉及微电子封装用金属材料，具体地说是一种集成电路或大规模集成电路用的氧化铝弥散强化铜引线框架铜合金材料及制备方法。
背景技术
在现有技术中用于集成电路或大规模集成电路的合金主要为Fe-Ni42合金，该合金其它性能尚好，只是导电率和导热率较低，其导电率仅为3％IACS(国际退火铜导电率标准)，近期的引线框架材料已大量采用铜合金，如Cu-2.3Fe-0.1Zn-0.03P和Cu-3Ni-0.7Si等合金，这些合金的抗拉强度在450～500MPa之间，导电率在50～60％IACS之间，软化温度在425～450℃之间，已有中国发明专利技术公开一种更高强度和更高导电率的铜合金，即氧化物弥散强化铜合金，(专利号：ZL94112582.3)其强度可以达到520MPa，导电率可达到75～78％ IACS，软化温度可达750～780℃之间，但这种合金主要作为电阻焊电极材料。
发明内容
为了进一步提高氧化铝弥散强化铜引线框架材料的抗拉强度，本发明的目的在于提供一种含铬的氧化铝弥散强化铜引线框架材料及制备方法。
为了实现上述目的，本发明的技术方案如下：
氧化铝弥散强化铜引线框架材料：按重量百分比计，其成份为0.2～0.3％的铬粉，1～3％的氧化铝粉，铜粉为余量；
其中：铬粉粒度小于300目，氧化铝粉粒度小于1微米，铜粉粒度为200～300目。
其制备方法：将气雾化的铜粉(粒度200～300目)与1～3wt％的氧化铝粉(粒度小于1微米)和0.2～0.3wt％铬粉(粒度小于300目)，在混料机中进行充分的混合，然后在高能球磨机中进行球磨(转速为600～800转/分，时间为1～2小时)，球磨后在氢气炉中进行还原处理，处理温度为400～500℃，时间为1.5～2小时，将处理后的混合粉在模具中冷压成型，压制压力为4～6吨/厘米2，一般为圆柱形坯体，该坯体在氢气保护下进行烧结，烧结温度为800～850℃时间为2～3小时，烧结后的圆柱体坯体进行挤压，挤压成方形型材，挤压温度为800～840℃，压力为7～8吨/厘米2；然后进行热处理使合金获得弥散强化和沉淀强化的双重强化效果，从而获得高强高导铜合金，具体是：先进行固溶处理，将该型材加热至950～1020℃，保温1～2小时并进行水淬；再冷轧并进行时效处理，冷轧成0.2～0.3mm的带材，其中当轧至1.5～2.0mm和0.8～1.2mm小时，分别在450～480℃温度下进行2～3小时时效处理。得到的带材可具有抗拉强度540～580MPa，导电率为73～76％ IACS和软化温度为750～780℃的优良特性。
本发明具有如下优点：
1.具有优良的材料特性。本发明在氧化铝弥散强化铜材料中添加了0.2～0.3％的铬，经过适当的热处理工艺，可进一步提高材料的强度，使其抗拉强度可以达到540～580MPa之间，导电率为73～76％ IACS，软化温度为750～780℃之间(该指标适合作引线框架材料)。
2.采用本发明方法制备的氧化铝弥散强化铜引线框架材料适用于集成电路或大规模集成电路。
具体实施方式
实施例1
将粒度为200目以下的气雾化铜粉与重量百分比为1％的氧化铝粉(粒度小于0.8微米)和重量百分比0.2％的铬粉(粒度小于300目)在混料机中进行充分混合，混粉时间为12小时，将混合后的粉放入搅拌式高能球磨机中球磨，搅拌机转速为600转/分，搅拌时间为2小时。球磨后的粉在氢气炉中进行还原处理，处理温度400℃，还原时间2小时。将还原后的粉放入冷压模中进行冷压，压制压力为4吨/厘米2，压坯为直径Φ80mm，高度为150mm的圆柱体，然后将圆柱体在氢气炉中烧结2小时，烧结温度为800℃，该圆柱体被热挤压成5×40mm的方型板坯，挤压温度为800℃，挤压压力为7吨/厘米2。
将该板材加热到950℃保温1小时，然后进行水淬。将水淬后的板材冷轧到1.5mm厚的带材，该带材在热处理炉中在450℃的温度下进行2小时的时效处理，然后再冷轧到0.8mm厚的带材，该带材在450℃温度下进行二次时效2小时，然后再冷轧到0.25mm的薄带。该带材的抗拉强度为540MPa，导电率为76％ IACS，软化温度为750℃。
实施例2
将粒度为200目以下的气雾化铜粉与重量百分比为3.0％的氧化铝粉(粒度小于0.6微米)和重量百分比0.3％的铬粉(粒度小于300目)在混料机中进行充分混合，混粉时间为24小时，将混合后的粉放入搅拌式高能球磨机中球磨，搅拌机转速为800转/分，搅拌时间为1小时。球磨后的粉在氢气炉中进行还原处理，处理温度为500℃，还原时间为1.5小时，将还原后的粉放入冷压模中进行冷压，压制压力为6吨/厘米2，压坯为直径Φ80mm，高140mm的圆柱体，然后将圆柱体在氢气炉中烧结3小时，烧结温度为850℃，该圆柱体被热挤压成5×40mm的方型板坯，挤压温度为840℃，挤压压力为8吨/厘米2。将该板材加热到1020℃保温1小时然后水淬。将水淬后的板材冷轧到2.0mm厚的带材，该带材在热处理炉中在480℃温度下进行时效3小时，然后再冷轧到1.2mm厚，该带材在480℃温度下进行二次时效3小时，最后冷轧到0.28mm的薄带。该带材的抗拉强度为560MPa，导电率为74％ IACS，软化温度为780℃。该指标特别适合作为引线框架材料。

Claims (10)

1.一种氧化铝弥散强化铜引线框架材料，其特征在于：按重量百分比计，其成份为0.2～0.3％的铬，1～3％的氧化铝粉，铜粉为余量。
2.按照权利要求1所述氧化铝弥散强化铜引线框架材料，其特征在于：其中：铬粉粒度小于300目，氧化铝粉粒度小于1微米，铜粉粒度为200～300目。
3.一种氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：在铜粉合金中添加重量百分比为0.2～0.3的铬粉及1～3的氧化铝粉，充分混合后球磨，在氢气环境中进行还原处理，再将还原处理后的混合粉冷压成型、烧结、挤压；然后进行热处理使合金获得弥散强化和沉淀强化的双重强化效果，从而获得高强高导铜合金，具体是：先进行固熔处理，将坯体加热至950～1020℃，保温1～2小时后水淬，再冷轧并进行时效处理即可。
4.按照权利要求3所述氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：所述铜粉为气雾化、粒度为200～300目的铜粉；氧化铝粉粒度小于1微米，铬粉粒度小于300目。
5.按照权利要求3所述氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：所述球磨的转速为600～800转/分，时间为1～2小时。
6.按照权利要求3所述氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：所述还原处理温度为400～500℃，时间为1.5～2小时。
7.按照权利要求3所述氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：其中冷压成型所用压制压力为4～6吨/厘米2。
8.按照权利要求3所述氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：其中冷压成型后的坯体在氢气保护下进行烧结，烧结温度为800～850℃，时间为2～3小时。
9.按照权利要求3所述氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：挤压是将烧结后的坯体挤压成型材，挤压温度为800～840℃，压力为7～8吨/厘米2。
10.按照权利要求3所述氧化铝弥散强化铜引线框架材料的制备方法，其特征在于：其中所述冷轧后的热处理过程中将坯体冷轧成0.2～0.3mm的带材，进行时效处理；其中：当轧至1.5～2.0mm和0.8～1.2mm时，分别在450～480℃温度下进行2～3小时时效处理。
CNB200310119001XA 2003-12-09 2003-12-09 一种氧化铝弥散强化铜引线框架材料的制备方法 Expired - Fee Related CN1276984C (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB200310119001XA CN1276984C (zh) 2003-12-09 2003-12-09 一种氧化铝弥散强化铜引线框架材料的制备方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB200310119001XA CN1276984C (zh) 2003-12-09 2003-12-09 一种氧化铝弥散强化铜引线框架材料的制备方法

Publications (2)

Publication Number Publication Date
CN1626691A true CN1626691A (zh) 2005-06-15
CN1276984C CN1276984C (zh) 2006-09-27

Family

ID=34761267

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB200310119001XA Expired - Fee Related CN1276984C (zh) 2003-12-09 2003-12-09 一种氧化铝弥散强化铜引线框架材料的制备方法

Country Status (1)

Country Link
CN (1) CN1276984C (zh)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100417736C (zh) * 2006-10-20 2008-09-10 西安理工大学 一种制备氧化铝弥散强化铜基复合材料的方法
CN100436634C (zh) * 2005-09-30 2008-11-26 中南大学 零烧氢膨胀纳米弥散强化Cu－Al2O3合金及其制备方法
CN100443619C (zh) * 2006-10-20 2008-12-17 西安理工大学 一种氧化铬和铬弥散强化铜基复合材料的制备方法
CN101831566A (zh) * 2010-06-10 2010-09-15 吉林大学 一种提高集成电路铜引线抗氧化复合膜的制备方法
CN107523708A (zh) * 2017-07-25 2017-12-29 广东省材料与加工研究所 一种Al2O3弥散强化铜‑铌合金的制备方法
CN109530705A (zh) * 2019-01-02 2019-03-29 广东省材料与加工研究所 一种氧化铝弥散强化铜基扩散合金粉的制备方法
CN109576529A (zh) * 2019-01-22 2019-04-05 中南大学 高性能弥散铜合金及其制备方法
CN109722561A (zh) * 2019-01-21 2019-05-07 中南大学 高性能Cu-Cr合金及制备方法
CN109957739A (zh) * 2017-12-14 2019-07-02 宜兴安纳西智能机械设备有限公司 一种电池输送装置用进端框架材料
CN110042270A (zh) * 2019-04-24 2019-07-23 宁波金田铜业(集团)股份有限公司 超细晶铜钛合金线材的制备方法
CN110565045A (zh) * 2019-10-14 2019-12-13 郁杨 一种高表面精度铜合金带材及其制备方法
CN110809805A (zh) * 2017-07-10 2020-02-18 株式会社协成 使用铜银合金的导电性部件、触头引脚以及装置
CN116043052A (zh) * 2023-01-16 2023-05-02 中南大学 一种纳米弥散强化铜合金及其制备方法与应用

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100436634C (zh) * 2005-09-30 2008-11-26 中南大学 零烧氢膨胀纳米弥散强化Cu－Al2O3合金及其制备方法
CN100443619C (zh) * 2006-10-20 2008-12-17 西安理工大学 一种氧化铬和铬弥散强化铜基复合材料的制备方法
CN100417736C (zh) * 2006-10-20 2008-09-10 西安理工大学 一种制备氧化铝弥散强化铜基复合材料的方法
CN101831566A (zh) * 2010-06-10 2010-09-15 吉林大学 一种提高集成电路铜引线抗氧化复合膜的制备方法
CN110809805A (zh) * 2017-07-10 2020-02-18 株式会社协成 使用铜银合金的导电性部件、触头引脚以及装置
CN107523708A (zh) * 2017-07-25 2017-12-29 广东省材料与加工研究所 一种Al2O3弥散强化铜‑铌合金的制备方法
CN109957739A (zh) * 2017-12-14 2019-07-02 宜兴安纳西智能机械设备有限公司 一种电池输送装置用进端框架材料
CN109530705A (zh) * 2019-01-02 2019-03-29 广东省材料与加工研究所 一种氧化铝弥散强化铜基扩散合金粉的制备方法
CN109722561A (zh) * 2019-01-21 2019-05-07 中南大学 高性能Cu-Cr合金及制备方法
CN109576529A (zh) * 2019-01-22 2019-04-05 中南大学 高性能弥散铜合金及其制备方法
CN110042270A (zh) * 2019-04-24 2019-07-23 宁波金田铜业(集团)股份有限公司 超细晶铜钛合金线材的制备方法
CN110565045A (zh) * 2019-10-14 2019-12-13 郁杨 一种高表面精度铜合金带材及其制备方法
CN116043052A (zh) * 2023-01-16 2023-05-02 中南大学 一种纳米弥散强化铜合金及其制备方法与应用

Also Published As

Publication number Publication date
CN1276984C (zh) 2006-09-27

Similar Documents

Publication Publication Date Title
CN1276984C (zh) 一种氧化铝弥散强化铜引线框架材料的制备方法
CN101586198B (zh) 一种高强度高导电性氧化铝弥散强化铜的制备工艺
CN100417736C (zh) 一种制备氧化铝弥散强化铜基复合材料的方法
CN105609155B (zh) 一种高导电率硬铝导线单丝及其制备方法
CN101531149B (zh) 一种超长Cu-Cr-Zr合金接触线的制备方法
CN101265536A (zh) 高强高导铜合金及其制备方法
CN105506329B (zh) 一种高Al2O3浓度Cu‑Al2O3纳米弥散强化合金的制备方法
CN108057732B (zh) 一种弥散强化铜与无氧铜复合棒材的制备方法
CN100436634C (zh) 零烧氢膨胀纳米弥散强化Cu－Al2O3合金及其制备方法
CN110144480B (zh) 一种电缆用石墨烯/铝复合材料单丝的制备方法
CN101202168A (zh) 新型银氧化锌触头材料制备工艺
CN109576529B (zh) 高性能弥散铜合金及其制备方法
CN111218589A (zh) 一种高导热压铸铝合金材料及其制备方法
CN109207766A (zh) 一种组织可控高铝含量Cu-Al2O3纳米弥散铜合金制备工艺
CN108559877A (zh) 充电桩导电零件用6系铝合金中厚板的加工工艺
CN103469007B (zh) 高级端子连接器用铜合金及其制备方法和应用
CN101709401A (zh) 硼、银、稀土元素添加Cu-Cr原位复合材料及其制备方法
CN106756205A (zh) 一种引线框架用铜合金材料及其制备方法
CN101456122A (zh) 高导电率高硅铝基合金及其制备方法
CN102864325A (zh) 多元稀土银电接点及其制备方法和用途
CN1844426A (zh) 弥散强化铜合金材料生产工艺方法
CN109957677A (zh) 一种Cu-Cr-Ag合金线材及其制备加工方法
CN109593981B (zh) 一种改善锭坯烧结性的银氧化锡触头材料的制备方法
CN111910101B (zh) 一种高纯度高强高导铜基靶材及其制备方法
CN108615633A (zh) 一种真空开关触头的制造方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C19 Lapse of patent right due to non-payment of the annual fee
CF01 Termination of patent right due to non-payment of annual fee