CN1622405A - Heat sink for coaxial packaging of surface-emitting laser - Google Patents
Heat sink for coaxial packaging of surface-emitting laser Download PDFInfo
- Publication number
- CN1622405A CN1622405A CN 200310118041 CN200310118041A CN1622405A CN 1622405 A CN1622405 A CN 1622405A CN 200310118041 CN200310118041 CN 200310118041 CN 200310118041 A CN200310118041 A CN 200310118041A CN 1622405 A CN1622405 A CN 1622405A
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- heat sink
- metal electrode
- emitting laser
- metallization via
- coaxial packaging
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- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The heat sink for coaxial package of surface emitting laser includes one heat sink, one first metal electrode and one second metal electrode made on the upper surface of the heat sink, one third metal electrode made on the lower surface of the heat sink, one first metallized through hole in the first metal electrode and one second metallized through hole in the second metal electrode.
Description
Technical field
The invention belongs to field of optoelectronic devices, it is heat sink that a kind of surface-emitting laser coaxial packaging of more specifically saying so is used.
Background technology
Vertical cavity surface emitting laser (VCSEL) all is a kind of attractive light source at numerous areas such as optical communication, optical interconnection and optical storages, and the VCSEL of coaxial packaging is widely used because of cost is low, easy to use.The heat sink direct carrier as the VCSEL chip that coaxial packaging is used mainly solves the heat radiation of chip and the connectivity problem of electrode.General VCSEL chip has P, N two coplanar electrodes not up and down, heat sink on also to two electrodes should be arranged.In the process of coaxial packaging, at first to be welded on the bottom electrode of VCSEL chip on the heat sink electrode, the top electrode of chip then is connected on another heat sink electrode by a spun gold, be welded on the TO seat heat sink then, with spun gold two pins of two electrodes on the heat sink electrode and TO pin coupled together respectively.Connect the spun gold of usefulness because be subjected to the restriction of VCSEL chip electrode size, general diameter less (φ＜25 μ m), inductive effect is apparent in view, approximately 1nh/mm.These inductance can influence the particularly modulating characteristic of high speed VCSEL of VCSEL, have limited the raising of device overall performance.Spun gold is many more, and the parasitic parameter of introducing is big more, and influence can be obvious more.
Summary of the invention
In order to overcome the above problems, the object of the present invention is to provide heat sink that a kind of surface-emitting laser coaxial packaging uses, use this heat sinkly can reduce spun gold quantity, reduce stray inductance influence that spun gold is introduced.
The technical scheme that the present invention solves its technical problem is:
It is heat sink that a kind of surface-emitting laser coaxial packaging of the present invention is used, it is characterized in that, comprising:
One is heat sink;
One first metal electrode and one second metal electrode, this first metal electrode and second metal electrode are produced on heat sink upper surface;
One the 3rd metal electrode, the 3rd metal electrode is produced on heat sink lower surface;
One first metallization via and one second metallization via are produced on first metal electrode and second metal electrode.
It is wherein heat sink that what adopt is diamond or aluminium nitride or beryllium oxide or carbofrax material.
Wherein handle through craft of gilding on the surface of first metal electrode, second metal electrode and the 3rd metal electrode.
Wherein the diameter of this first metallization via and the second metallization via equals 450 μ m.
Wherein this first metallization via and the second metallization via are step-like via.
Description of drawings
For further specifying technology contents of the present invention, the invention will be further described below in conjunction with drawings and Examples, wherein:
Fig. 1 is that the coaxial surface-emitting laser of the present invention encapsulates with heat sink vertical view
Fig. 2 is that the coaxial surface-emitting laser of the present invention encapsulates with heat sink upward view
Fig. 3 is the heat sink cross sectional side view of the coaxial surface-emitting laser encapsulation of the present invention.
Embodiment
See also Fig. 1, Fig. 2 and Fig. 3, it is heat sink that a kind of surface-emitting laser coaxial packaging of the present invention is used, comprising:
One heat sink 1, heat sink 1 what adopted is diamond or aluminium nitride or beryllium oxide or carbofrax material;
One first metal electrode 2 and one second metal electrode 3, this first metal electrode 2 and second metal electrode 3 are produced on heat sink 1 upper surface, and handle through craft of gilding on the surface of this first metal electrode 2 and second metal electrode 3;
One the 3rd metal electrode 6 is produced on heat sink 1 lower surface, and handle through craft of gilding on the surface of the 3rd metal electrode 6;
One first metallization via 4 and one second metallization via 5 lay respectively on first metal electrode 2 and second metal electrode 3, and the diameter of this first metallization via 4 and the second metallization via 5 equals 450 μ m; Wherein this first metallization via 4 and the second metallization via 5 are step-like via.
In the embodiment of Fig. 1, Fig. 2 and Fig. 3, the process of its making is: at first adopt the technology of digital control hole drilling or laser drilling to make the first metallization via 4 and the second metallization via 5 on heat sink 1; Realize the metallization of the first metallization via 4 and the second metallization via 5 then with electroless copper plating technology and electric plating of whole board technology; Use technologies such as photoetching and plating to make first metal electrode 2 and second metal electrode 3 at last at heat sink 1 upper surface, make the 3rd metal electrode 6 at heat sink 1 lower surface, and gold-plated processing is carried out on the surface of first metal electrode 2, second metal electrode 3 and the 3rd metal electrode 6.
Claims (5)
- What 1, a kind of surface-emitting laser coaxial packaging was used is heat sink, it is characterized in that, comprising:One is heat sink;One first metal electrode and one second metal electrode, this first metal electrode and second metal electrode are produced on heat sink upper surface;One the 3rd metal electrode, the 3rd metal electrode is produced on heat sink lower surface;One first metallization via and one second metallization via are produced on first metal electrode and second metal electrode.
- What 2, a kind of surface-emitting laser coaxial packaging as claimed in claim 1 was used is heat sink, it is characterized in that, wherein heat sink what adopt is diamond or aluminium nitride or beryllium oxide or carbofrax material.
- What 3, a kind of surface-emitting laser coaxial packaging as claimed in claim 1 was used is heat sink, it is characterized in that, wherein handle through craft of gilding on the surface of first metal electrode, second metal electrode and the 3rd metal electrode.
- What 4, a kind of surface-emitting laser coaxial packaging as claimed in claim 1 was used is heat sink, it is characterized in that, wherein the diameter of this first metallization via and the second metallization via equals 450 μ m.
- 5, as claim 1 or 4 described a kind of surface-emitting laser coaxial packaging use heat sink, it is characterized in that wherein this first metallization via and the second metallization via are step-like via.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101180412A CN1320710C (en) | 2003-11-24 | 2003-11-24 | Heat sink for coaxial packaging of surface-emitting laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB2003101180412A CN1320710C (en) | 2003-11-24 | 2003-11-24 | Heat sink for coaxial packaging of surface-emitting laser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1622405A true CN1622405A (en) | 2005-06-01 |
| CN1320710C CN1320710C (en) | 2007-06-06 |
Family
ID=34761046
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2003101180412A Expired - Fee Related CN1320710C (en) | 2003-11-24 | 2003-11-24 | Heat sink for coaxial packaging of surface-emitting laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1320710C (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720477A (en) * | 2016-02-29 | 2016-06-29 | 中国科学院半导体研究所 | Package structure applicable to different-surface electrode laser chip |
| WO2020088251A1 (en) * | 2018-10-29 | 2020-05-07 | 深圳市中光工业技术研究院 | Semiconductor laser device |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3082170B2 (en) * | 1995-04-26 | 2000-08-28 | ソニー株式会社 | Peltier element for wire bonding |
| CN1189000A (en) * | 1997-01-09 | 1998-07-29 | 日本电气株式会社 | Semiconductor laser module |
| US6791181B2 (en) * | 2000-11-29 | 2004-09-14 | Mitsubishi Chemical Corporation | Semiconductor light emitting device |
| CN1365169A (en) * | 2001-06-21 | 2002-08-21 | 中国科学院长春光学精密机械与物理研究所 | Active large passage diamond thick film heat sink and its preparation |
| CN1367556A (en) * | 2002-02-01 | 2002-09-04 | 中国科学院长春光学精密机械与物理研究所 | Back radiation active small channel heat sink |
| ES2191559B1 (en) * | 2002-02-18 | 2005-02-01 | Monocrom, S.L. | LASER MODULE |
-
2003
- 2003-11-24 CN CNB2003101180412A patent/CN1320710C/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105720477A (en) * | 2016-02-29 | 2016-06-29 | 中国科学院半导体研究所 | Package structure applicable to different-surface electrode laser chip |
| CN105720477B (en) * | 2016-02-29 | 2018-08-10 | 中国科学院半导体研究所 | Encapsulating structure applied to antarafacial electrode laser device chip |
| WO2020088251A1 (en) * | 2018-10-29 | 2020-05-07 | 深圳市中光工业技术研究院 | Semiconductor laser device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1320710C (en) | 2007-06-06 |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20070606 |