CN1614371A - Pressure sensor of optical fiber micro-electromechanic system - Google Patents
Pressure sensor of optical fiber micro-electromechanic system Download PDFInfo
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- CN1614371A CN1614371A CN 200410064904 CN200410064904A CN1614371A CN 1614371 A CN1614371 A CN 1614371A CN 200410064904 CN200410064904 CN 200410064904 CN 200410064904 A CN200410064904 A CN 200410064904A CN 1614371 A CN1614371 A CN 1614371A
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Abstract
A transducer consists of base, a single crystal silicon flat, Fabry-Perot cavity, a groove, diaphragm and optical fibre. Its preparing method includes using Pyrex backing as base, bonding Pyrex anode with single crystal silicon flat having etched groove in thin cylindrical shape at bottom surface to form Fabry-Perot cavity carrying out deep corrosion on top surface for forming groove and finally for forming diaphragm of single crystal silicon, placing optical fibre end at bottom of Pyrex backing and connecting the two with photocureably epoxy.
Description
Technical field
The present invention relates to use monocrystalline silicon membrane as pressure sensitive film, have anti-electromagnetic interference (EMI), can form optical fiber MEMS (MEMS (micro electro mechanical system)) pressure transducer of performances such as distribution pressure Measurement Network and preparation method thereof.
Background technology
In the middle of at present normally used absolute, the relative pressure sensor structure, Fabry-Perot interference of light chamber is to adopt following technology to realize.At first with Pyrex photoetching making good pattern; With the BOE corrosive liquid Pyrex that do not use photoresist masking are corroded then, corrosion obtains the cavity of desired thickness; Use anode linkage technology that Pyrex and silicon chip tightening key are lumped together at last, make Fabry-Perot interference of light chamber.If the making relative pressure sensor, then before silicon chip and Pyrex bonding, necessary first perforate is as the introducing port of relative pressure.
Yet in the middle of such device, there is following problem:
(1) difficulty of the quantitative degree of depth corrosion of Pyrex is bigger, and the surfaceness after the corrosion is very big, and is bigger for the optical fiber MEMS pressure transducer Effect on Performance of utilizing interference of light generation transducing signal.
(2) because interference of light cavity is to use corrosion and anode linkage technology to Pyrex to obtain, and silicon chip degree of depth corrosion pattern is by photoetching on silicon chip, shelter then that corrosion forms, two difficulty of aiming at of glass and silicon chip are just very big like this, are not easy realization.
(3) because optical fiber and glass are bonded together by photo-curing epoxy resin, therefore the perforate of reference pressure is easy to be stopped up by epoxy resin in above-mentioned relative pressure sensor.
Summary of the invention
Technical matters: the present invention is intended to address the above problem provides a kind of precision and sensitivity good, and anti-electromagnetic interference (EMI) can be formed optical fiber MEMS pressure transducer of distribution measuring network and preparation method thereof.
Technical scheme: in the past under the situation that guarantees the corrosion surface flatness, be difficult to the cell body of etching desired thickness on silicon chip.Yet along with the continuous development and the improvement of MEMS processing technology in recent years, smooth corrosion surface and the accurate double-sided alignment technology of acquisition has become possibility when deep etch.
To achieve these goals, the optical fiber MEMS sensor that is used for gaging pressure of the present invention is substrate with the Pyrex substrate, is provided with a monocrystalline silicon piece on the Pyrex substrate; Be provided with Fabry-Perot cavity between the lower surface central authorities of this monocrystalline silicon piece and the Pyrex substrate; The monocrystalline silicon piece upper face center is provided with a groove, and the central authorities of monocrystalline silicon piece are the monocrystalline silicon diaphragm; Below the Pyrex substrate, be provided with optical fiber.
For lower surface and the Fabry Pyrex substrate between-Perot cavity other input channel that also be provided with a reference pressure of relative pressure sensor at monocrystalline silicon piece, on the Pyrex substrate, be provided with the transmission hole of a reference pressure, one end of the transmission hole of this reference pressure is communicated with the input channel of reference pressure, the other end is communicated with outside, forms relative pressure sensor.
The method for making that is used for the optical fiber MEMS sensor of gaging pressure of the present invention is: this sensor with Pyrex as substrate, by lower surface etched the monocrystalline silicon piece and the Pyrex anode linkage of shallow cylindrical cell body form Fabry-Perot cavity, upper surface from monocrystalline silicon piece carries out deep etch formation groove again, form the monocrystalline silicon diaphragm at last, the end of optical fiber is connected on the bottom of Pyrex substrate, by photo-curing epoxy resin optical fiber is connected with the Pyrex substrate.Utilization litho pattern and RIE (reactive ion etching) technology form shallow cylindrical cell body in the monocrystalline silicon surface etching, and by anode linkage technology Pyrex and the monocrystalline silicon piece bonding that etches figure are got up to form at last light Fa Buli-Perot cavity.Obtain the monocrystalline silicon piece of desired thickness by deep etch technology etching.
It is characterized in that concrete step of making is:
(a) silicon dioxide of making of thermal oxide, the silicon nitride of making of PECVD (plasma enhanced chemical vapor deposition) technology is as monocrystalline silicon＜100〉the deep etch masking layer in crystal orientation,
(b) make shallow cylindrical cell body with reactive ion etching process at monocrystalline silicon sheet surface,
(c) with anode linkage technology etching is formed the monocrystalline silicon piece and the roc silex glass bonding of shallow cylindrical cell body, makes Fabry-Perot cavity,
(d) the monocrystalline silicon membrane making is to adopt KOH solution deep etch and the meticulous etching process combined of reactive ion etching,
(e) in super-clean bench, will be bonded together by photo-curing epoxy resin by the optical fiber and the chip of optical-fibre precise adjusting bracket control;
(f) the utilization via process is opened the transmission hole of a reference pressure in the relative pressure sensor on the Pyrex substrate, so that will introduce in the reference pressure chamber with reference to air pressure.
Beneficial effect: utilization deep etch and RIE technology are made and are obtained monocrystalline silicon membrane, and following advantage is arranged:
A, such cell pressure sensitive membrane that obtains of making have the high sensitivity and the linearity.
B, make monocrystalline silicon membrane or the polysilicon film obtain with epitaxy technique and compare, avoided extension to form the unrelieved stress instability that silicon fiml has, the silicon fiml that made obtains does not have unrelieved stress, have stable, high-precision MEASUREMENTS OF THIN.
Therefore,, can realize constituting by monocrystalline silicon membrane that deep etch and RIE technology are made if by the present invention, the precision height, highly sensitive, the optical fiber MEMS pressure transducer of good reliability.
Description of drawings
Fig. 1 is an optical fiber MEMS absolute pressure transducer structural representation among the present invention.
Fig. 2 is an optical fiber MEMS relative pressure sensor structural representation among the present invention.
Fig. 3 is an optical fiber MEMS absolute pressure transducer processing and fabricating step synoptic diagram among the present invention.
Fig. 4 is an optical fiber MEMS relative pressure sensor processing and fabricating step synoptic diagram among the present invention.
Fig. 5 is the three-dimensional deformation synoptic diagram after optical fiber MEMS pressure transducer monocrystalline silicon membrane is under pressure among the present invention.
Among the above figure monocrystalline silicon piece 1 is arranged, Pyrex substrate 2, optical fiber 3, monocrystalline silicon membrane 4, Fabry-Perot cavity 5, photo-curing epoxy resin 6, P are represented the pressure on top.
Embodiment
The optical fiber MEMS sensor that is used for gaging pressure of the present invention is substrate with Pyrex substrate 2, is provided with a monocrystalline silicon piece 1 on Pyrex substrate 2; Be provided with Fabry-Perot cavity 5 between the lower surface central authorities of this monocrystalline silicon piece 1 and the Pyrex substrate 2; Monocrystalline silicon piece 1 upper face center is provided with a groove 11, and the central authorities of monocrystalline silicon piece 1 are monocrystalline silicon diaphragm 4; Below Pyrex substrate 2, be provided with optical fiber 3.For relative pressure sensor, lower surface and the 5 other input channels 25 that also are provided with a reference pressure of the Fabry-Perot cavity between the Pyrex substrate 2 at monocrystalline silicon piece 1, on Pyrex substrate 2, be provided with the transmission hole 24 of a reference pressure, one end of the transmission hole 24 of this reference pressure is communicated with the input channel 25 of reference pressure, the other end is communicated with outside, forms relative pressure sensor.
Monocrystalline silicon membrane 4 is to be made by KOH corrosion and reflection ion etching process combined; Fabry-Perot cavity 5, the utilization reactive ion etching process etches shallow cylindrical cell body earlier, by anode linkage technology silicon chip and glass is bonded together again, forms Fabry-Perot cavity; Photo-curing epoxy resin since Pyrex and monocrystalline silicon piece be bonded together by vacuum anode linkage technology, therefore the air pressure inside of Fabry-Perot cavity equals the indoor ambient pressure of vacuum anode linkage, therefore can be used as the reference pressure of absolute pressure transducer.
In above structure, light enters Fabry-Perot cavity by optical fiber, monocrystalline silicon membrane with come back reflective with the upper surface of Pyrex, form multiple-beam interference.When monocrystalline silicon membrane is subjected to counterpressure deflection will take place, interference light intensity and back light phase place all change, and by measuring the variation of interference light intensity or phase place, just can measure the testing pressure that monocrystalline silicon membrane is subjected to.
The detailed processing technology step of optical fiber MEMS absolute pressure transducer, as described below:
(a) silicon dioxide that two-sided thermal oxide one deck of monocrystalline silicon piece that will＜100〉crystal orientation is 1 micron,
(b) deposit the silicon nitride of 0.3 micron of one deck again in the silicon chip front,
(c) masking layer is made with thick photoresist in the front, with the BHF corrosive liquid silicon dioxide at the back side is removed again, removes the front photoresist with acetone then,
(d) make required pattern by lithography in silicon chip back, and with the monocrystalline silicon that reactive ion etching process (RIE) etching is not sheltered, etch the shallow cylindrical cell body of desired depth,
(e) remove silicon chip back side photoresist with acetone,
(f) utilization anode linkage technology is bonded together the silicon chip back side of Pyrex and the good shallow cylindrical cell body of etching,
(g) in the front of said structure, make required figure by lithography, respectively silicon nitride and silicon dioxide are etched away with RIE technology then,
(h) with the photoresist on the acetone removal silicon chip back side,
(i) with the KOH etchant solution monocrystalline silicon of not sheltering is carried out deep etch, and measures the corrosion depth of silicon chip, thereby obtain corrosion speed and etching time in corrosive liquid with the step instrument,
(j) when eroding to certain thickness, with the meticulous etching of RIE technology, obtain the monocrystalline silicon membrane of desired thickness,
(k) optical fiber and the sensor head with the end face polishing is glued together by ultraviolet curing process;
If the making relative pressure sensor, as long as make an amendment above-mentioned technology as follows:
(1) in step (d), uses the relative pressure sensor mask.
(2) in step (j), obtain structure utilization laser ablation technology and etch an aperture, as the through hole of reference pressure on glass.
In the sensor procedure of processing, all patterns all form on monocrystalline silicon piece, have so just avoided silicon chip and the problem of fine registration when all pattern being arranged on glass.
Wherein the reference pressure through hole is after monocrystalline silicon membrane corrosion forms, form by laser ablation technology, therefore: a, corresponding above the through hole is the thick monocrystalline silicon piece of corrosion not, so monocrystalline silicon membrane can not sustain damage.If the b through hole is that etching forms before the corrosion silicon fiml, then in ensuing monocrystalline silicon deep etch technology, must avoid corrosive liquid to enter in the Fabry Perot chamber with adhesive tape etc. with the through hole sealing.And the silicon deep etch needs at least 6 hours, and protection is difficulty quite.Via etch process is placed on after silicon fiml forms, has avoided this problem preferably.
As test example of the present invention, for example, can obtain the monocrystalline silicon diaphragm of 600 microns of diameters, 20 microns of thickness, absolute pressure measurement can reach the optical fiber MEMS pressure transducer of 2.5Mpa.
Therefore, if by the present invention, can use the MEMS processing technology to make and obtain precision, sensitivity is good, reliability height, anti-electromagnetic interference (EMI) can be measured the optical fiber MEMS pressure transducer of distribution pressure.
Claims (4)
1, a kind of optical fiber MEMS sensor that is used for gaging pressure is characterized in that this sensor is substrate with Pyrex substrate (2), is provided with a monocrystalline silicon piece (1) on Pyrex substrate (2); Be provided with Fabry-Perot cavity (5) between lower surface central authorities of this monocrystalline silicon piece (1) and the Pyrex substrate (2); Monocrystalline silicon piece (1) upper face center is provided with a groove (11), and the central authorities of monocrystalline silicon piece (1) are monocrystalline silicon diaphragm (4); Below Pyrex substrate (2), be provided with optical fiber (3).
2, the optical fiber MEMS sensor that is used for gaging pressure according to claim 1, it is characterized in that lower surface and the other input channel (25) that also is provided with a reference pressure of the Fabry-Perot cavity (5) between the Pyrex substrate (2) at monocrystalline silicon piece (1), on Pyrex substrate (2), be provided with the transmission hole (24) of a reference pressure, one end of the transmission hole of this reference pressure (24) is communicated with the input channel (25) of reference pressure, the other end is communicated with outside, forms relative pressure sensor.
3, a kind of method for making that is used for the optical fiber MEMS sensor of gaging pressure as claimed in claim 1, it is characterized in that this sensor with Pyrex as substrate, by lower surface etched the monocrystalline silicon piece of shallow cylindrical cell body (1) form Fabry-Perot cavity (5) with the Pyrex anode linkage, upper surface from monocrystalline silicon piece (1) carries out deep etch formation groove (11) again, form monocrystalline silicon diaphragm (4) at last, the end of optical fiber (3) is connected on the bottom of Pyrex substrate (2), by photo-curing epoxy resin (6) optical fiber (3) is connected with Pyrex substrate (2).
4, the method for making that is used for the optical fiber MEMS sensor of gaging pressure according to claim 3 is characterized in that concrete step of making is:
(a) silicon dioxide of making of thermal oxide, the silicon nitride of making of PECVD (plasma enhanced chemical vapor deposition) technology is as monocrystalline silicon＜100〉the deep etch masking layer in crystal orientation,
(b) make shallow cylindrical cell body with reactive ion etching process at monocrystalline silicon sheet surface,
(c) with anode linkage technology etching is formed the monocrystalline silicon piece and the roc silex glass bonding of shallow cylindrical cell body, makes Fabry-Perot cavity,
(d) the monocrystalline silicon membrane making is to adopt KOH solution deep etch and the meticulous etching process combined of RIE (reactive ion etching),
(e) in super-clean bench, will be bonded together by photo-curing epoxy resin by the optical fiber and the chip of optical-fibre precise adjusting bracket control;
(f) the utilization via process is opened the transmission hole of a reference pressure in the relative pressure sensor on the Pyrex substrate, so that will introduce in the reference pressure chamber with reference to air pressure.
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| Application Number | Priority Date | Filing Date | Title |
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| CN 200410064904 CN1280616C (en) | 2004-10-11 | 2004-10-11 | Pressure sensor of optical fiber micro-electromechanic system |
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| CN 200410064904 CN1280616C (en) | 2004-10-11 | 2004-10-11 | Pressure sensor of optical fiber micro-electromechanic system |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034028B (en) * | 2007-02-09 | 2010-05-19 | 南京师范大学 | Fabry-Perotw fiber-optic pressure sensor and manufacture method therefor |
| CN103528735A (en) * | 2013-10-31 | 2014-01-22 | 南京信息工程大学 | Miniature optical fiber Fabry-Perot pressure sensor and manufacturing method thereof |
| CN104122015A (en) * | 2013-04-25 | 2014-10-29 | 三美电机株式会社 | Physical quantity detection device and physical quantity detector |
| CN106052915A (en) * | 2016-07-22 | 2016-10-26 | 南京信息工程大学 | MEMS fiber pressure sensor and manufacturing method thereof |
| CN106197782A (en) * | 2015-05-31 | 2016-12-07 | 成都凯天电子股份有限公司 | Miniature extrinsic Fabry-perot optical fiber pressure transducer |
| CN107014691A (en) * | 2017-04-01 | 2017-08-04 | 天津大学 | A kind of chip bonding strength meter and method |
| CN107664548A (en) * | 2017-11-03 | 2018-02-06 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of EFPI fibre optic compression sensors and preparation method thereof |
| CN107917775A (en) * | 2017-11-01 | 2018-04-17 | 集安市盛程水利水电建设公司 | Pressure transducer based on Fabry Perot interference with strut buckling principle |
| CN108489645A (en) * | 2017-02-21 | 2018-09-04 | 意法半导体股份有限公司 | Micro electronmechanical scalable direct plugging-in pressure resistance/pressure sensor |
| CN110044803A (en) * | 2019-04-23 | 2019-07-23 | 蚌埠中光电科技有限公司 | A method of the measurement glass etching performance of resistance to HF |
| CN110332981A (en) * | 2019-07-10 | 2019-10-15 | 西北工业大学 | A kind of MEMS fibre optic hydrophone and preparation method thereof |
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2004
- 2004-10-11 CN CN 200410064904 patent/CN1280616C/en not_active Expired - Fee Related
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101034028B (en) * | 2007-02-09 | 2010-05-19 | 南京师范大学 | Fabry-Perotw fiber-optic pressure sensor and manufacture method therefor |
| CN104122015B (en) * | 2013-04-25 | 2019-04-19 | 三美电机株式会社 | Physical quantity detection element and measuring physical |
| CN104122015A (en) * | 2013-04-25 | 2014-10-29 | 三美电机株式会社 | Physical quantity detection device and physical quantity detector |
| CN103528735A (en) * | 2013-10-31 | 2014-01-22 | 南京信息工程大学 | Miniature optical fiber Fabry-Perot pressure sensor and manufacturing method thereof |
| CN103528735B (en) * | 2013-10-31 | 2015-11-18 | 南京信息工程大学 | A kind of Miniature optical fiber Fabry-Perot pressure sensor and preparation method thereof |
| CN106197782A (en) * | 2015-05-31 | 2016-12-07 | 成都凯天电子股份有限公司 | Miniature extrinsic Fabry-perot optical fiber pressure transducer |
| CN106197782B (en) * | 2015-05-31 | 2019-05-28 | 成都凯天电子股份有限公司 | Miniature extrinsic Fabry-perot optical fiber pressure sensor |
| CN106052915A (en) * | 2016-07-22 | 2016-10-26 | 南京信息工程大学 | MEMS fiber pressure sensor and manufacturing method thereof |
| CN106052915B (en) * | 2016-07-22 | 2019-02-01 | 南京信息工程大学 | A kind of production method of MEMS fibre optic compression sensor |
| CN108489645A (en) * | 2017-02-21 | 2018-09-04 | 意法半导体股份有限公司 | Micro electronmechanical scalable direct plugging-in pressure resistance/pressure sensor |
| US10724909B2 (en) | 2017-02-21 | 2020-07-28 | Stmicroelectronics S.R.L. | Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor |
| US11009412B2 (en) | 2017-02-21 | 2021-05-18 | Stmicroelectronics S.R.L. | Microelectromechanical scalable bulk-type piezoresistive force/pressure sensor |
| CN108489645B (en) * | 2017-02-21 | 2021-06-04 | 意法半导体股份有限公司 | Micro-electromechanical scalable direct-insertion piezoresistance/pressure sensor |
| CN107014691A (en) * | 2017-04-01 | 2017-08-04 | 天津大学 | A kind of chip bonding strength meter and method |
| CN107917775A (en) * | 2017-11-01 | 2018-04-17 | 集安市盛程水利水电建设公司 | Pressure transducer based on Fabry Perot interference with strut buckling principle |
| CN107664548A (en) * | 2017-11-03 | 2018-02-06 | 中国航空工业集团公司北京长城计量测试技术研究所 | A kind of EFPI fibre optic compression sensors and preparation method thereof |
| CN110044803A (en) * | 2019-04-23 | 2019-07-23 | 蚌埠中光电科技有限公司 | A method of the measurement glass etching performance of resistance to HF |
| CN110332981A (en) * | 2019-07-10 | 2019-10-15 | 西北工业大学 | A kind of MEMS fibre optic hydrophone and preparation method thereof |
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