CN102374918B - Micro-electromechanical Piezoresistive Pressure Sensor - Google Patents
Micro-electromechanical Piezoresistive Pressure Sensor Download PDFInfo
- Publication number
- CN102374918B CN102374918B CN201110190682.3A CN201110190682A CN102374918B CN 102374918 B CN102374918 B CN 102374918B CN 201110190682 A CN201110190682 A CN 201110190682A CN 102374918 B CN102374918 B CN 102374918B
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- Prior art keywords
- silicon
- diaphragm
- piezoresistance
- pressure
- silicon substrate
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- Expired - Fee Related
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- 229910052710 silicon Inorganic materials 0.000 claims abstract description 67
- 239000010703 silicon Substances 0.000 claims abstract description 66
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 62
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 36
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 36
- 238000000034 method Methods 0.000 claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 239000002184 metal Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 10
- 235000012239 silicon dioxide Nutrition 0.000 claims abstract description 5
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 22
- 239000004020 conductor Substances 0.000 claims description 14
- 238000000151 deposition Methods 0.000 claims description 11
- 238000001020 plasma etching Methods 0.000 claims description 8
- 150000003376 silicon Chemical class 0.000 claims description 7
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 5
- 238000004544 sputter deposition Methods 0.000 claims description 4
- 230000008021 deposition Effects 0.000 claims description 3
- 239000012212 insulator Substances 0.000 abstract description 6
- 239000012528 membrane Substances 0.000 abstract 3
- 238000001514 detection method Methods 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 8
- 238000005530 etching Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 4
- 238000009530 blood pressure measurement Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000002349 favourable effect Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 240000004859 Gamochaeta purpurea Species 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000003679 aging effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 230000005226 mechanical processes and functions Effects 0.000 description 1
- 238000005334 plasma enhanced chemical vapour deposition Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000013341 scale-up Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
- G01L9/0041—Transmitting or indicating the displacement of flexible diaphragms
- G01L9/0051—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance
- G01L9/0052—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements
- G01L9/0055—Transmitting or indicating the displacement of flexible diaphragms using variations in ohmic resistance of piezoresistive elements bonded on a diaphragm
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0627—Protection against aggressive medium in general
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L19/00—Details of, or accessories for, apparatus for measuring steady or quasi-steady pressure of a fluent medium insofar as such details or accessories are not special to particular types of pressure gauges
- G01L19/06—Means for preventing overload or deleterious influence of the measured medium on the measuring device or vice versa
- G01L19/0681—Protection against excessive heat
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
The sensor has a membrane arranged in a silicon substrate (1) i.e. silicon-on-insulator substrate. An electrical insulating layer (3) is arranged on a silicon carbide layer opposite side of the substrate. The membrane is arranged at the insulating layer opposite side to piezoresistors (4) and conductive paths (5) provided with metal contacts for piezoresistive detection of pressure-effected deformation of the membrane. The carbide layer has thickness in a range between 1 and 20 micrometer, and is made of polycrystalline silicon carbide. The insulating layer is made of silicon dioxide. An independent claim is also included for a method for manufacturing a piezoresistive pressure sensor.
Description
Technical field
The present invention relates to a kind of piezoresistance, pressure sensor and a kind of method for the manufacture of piezoresistance, pressure sensor.
Background technology
The known Mechatronic Systems (MEMS) implemented as acceleration transducer and pressure transducer.
Most of MEMS pressure sensor is according to identical basic action principle work, and the pressure differential wherein on diaphragm causes the distortion of this diaphragm.Pressure drag analytical proof detects the diaphragm deformation proportional with pressure differential with being applicable to measuring technique.Utilize the high piezoresistive effect of silicon at this, so as the piezoresistance on the mechanical tensioning state of diaphragm or diaphragm to be converted to can electrical way analyze amount.
Because piezoresistive effect is large in p doped silicon than in n doped silicon, so generally the p+ doped region of pressure drag as so-called n trap can be applied by doping.The running temperature of the frequent application of this sensor is arranged in the scope of about 150 DEG C.For higher temperature, such as, until about 500 DEG C, can use with SOI(Silicon on Insulator, silicon-on-insulator) technology manufacture piezoresistance, pressure sensor.At this, the diaphragm of the pressure transducer of micromechanics typically 10-100 μm thick.
Summary of the invention
Theme of the present invention is a kind of piezoresistance, pressure sensor, comprise silicon substrate, this silicon substrate is furnished with the silicon carbide layer of structure diaphragm, wherein also on that side relative with silicon carbide layer of silicon substrate, be furnished with electric insulation layer, that side relative with diaphragm of electric insulation layer is furnished with the distortion that piezoresistance causes for the pressure detecting diaphragm in pressure drag mode with the printed conductor with Metal contacts.
Therefore silicon substrate arranged according to the present invention, makes also to give pressure transducer enough stability as matrix when high temperature.Silit (SiC) layer is used as diaphragm, and this silicon carbide layer is arranged on substrate.Therefore substrate has vacancy, and in this vacancy, silicon carbide layer is as diaphragm elastically deformable, to react pressure.
According to the silicon carbide layer of piezoresistance, pressure sensor of the present invention with the thickness that can be used as diaphragm and use until also show as flexible more than 1000 DEG C.Therefore the silit sensor of the serviceability temperature allowed far above 500 DEG C can be manufactured.Because not there is electrical functions according to silit of the present invention but only there is mechanical function, single crystal silicon carbide wafer costly therefore can be abandoned.Because the wafer expense of monocrystalline silicon carbide is such as about 200 times high of silicon.
Therefore the advantage that pressure transducer according to the present invention provides is that it may be used for numerous applications of pressure transducer, in particular for requiring the application in the motor vehicle of very operation at high temperature.Such as at cylinder pressure measurement or be this situation in the pressure survey of waste gas section, it may be necessary for satisfied following emissions standards.The temperature here existed at pressure sensor component place reaches the value of about 600 DEG C for cylinder pressure measurement and even reaches 1100 DEG C for the pressure survey at exhaust manifold place.
Also almost leakage current is avoided completely by the electric insulation layer below piezoresistance.This insulation course does not damage at this or only damages the deformability of diaphragm minutely.
The advantage that the diaphragm that setting is made up of silit has also has: compared with pure silicon, and silit shows the aging effect obviously reduced.The durability of diaphragm and sensor can significantly improve thus.
Therefore utilize and can manufacture micro-electromechanical pressure transducer for low far above cost of use during 500 DEG C of temperature according to piezoresistance, pressure sensor of the present invention.
In the scope of a preferred extension, silicon carbide layer has the thickness of 1 μm to 20 μm.With this thickness, silicon carbide layer has enough stability, even if also not have less desirable distortion when high temperature or otherwise adversely to suffer damage.In addition, elastic deformation, in whole temperature range, especially until the environment temperature of 1000 DEG C is possible, makes diaphragm be fully responsive.Preferably can use in the pressure limit of 1 bar to 5000 bar according to pressure transducer of the present invention like this.
In the scope of another favourable expansion scheme, silicon carbide layer is constructed by polycrystal carborundum (poly-SiC).This layer such as with CVD method expense very low manufacture.
In the scope of another preferred expansion scheme, the silicon structure that piezoresistance and printed conductor are adulterated by p+.Thus, the piezoresistive effect of resistance is extra high.Such as, in the silicon that adulterates at p of piezoresistive effect than high in the silicon of n doping.P+ doping within the scope of the invention means, foreign atom or lattice imperfection (Stoerstellen) are especially introduced in silicon crystal lattice with the amount between 0.1ppb and 100ppm.These foreign atoms change the feature of original material targetedly.When the silicon of p+ doping, triad, so-called acceptor to be introduced in silicon crystal lattice and to replace tetravalence silicon atom for this reason.Therefore produce positive space, it is also referred to as hole or hole.
According to the present invention also advantageously, electric insulation layer is by silicon dioxide (SiO
2) structure.Silicon dioxide is also suitable insulator when high temperature and therefore effectively can reduces or Leakage prevention electric current in the temperature range of whole expectation.
The invention still further relates to a kind of method for the manufacture of piezoresistance, pressure sensor, comprise step:
-using silicon substrate, this silicon substrate is separated with silicon fiml by electric insulation layer;
-structuring is carried out to generate piezoresistance and printed conductor to silicon fiml;
-partly remove silicon substrate until electric insulation layer is to generate diaphragm geometry;
-on diaphragm geometry depositing silicon carbide layers;
-on printed conductor, arrange Metal contacts.
Utilize and can manufacture piezoresistance, pressure sensor especially simply according to method of the present invention, the sensor manufactured by utilizing can be obtained according to of the present invention and about the advantage described in this sensor.
At this particularly advantageously, the structuring of silicon fiml is undertaken by reactive ion etching (RIE).When reactive ion etching, light plasma by etching gas in a vacuum by high frequency between two electrodes.The silicon being exposed to plasma is etched by Ions Bombardment.Etching gas can also be utilized to carry out the chemical reaction of silicon.These two etching parts can targetedly for the control of etching process.
In the scope of another expansion scheme according to the inventive method, carried out the removal of silicon substrate by KOH etching.When this anisotropic etching process, silicon is separated out as hydroxo complex from substrate, wherein can realize the very uniform process with high rate of etch.
In the scope of another expansion scheme according to the inventive method, carried out the deposition of silicon carbide layer by PECVD depositing SiC.Chemical vapor deposition (the plasma enhanced chemical vapour deposition that this plasma is supported, PECVD) be can in particular for the method for depositing silicon carbide, utilize the method very high accuracy and uniform thickness can carry out depositing silicon carbide layers.
Also advantageously, to the structure of Metal contacts by sputtering, such as utilize the sputtering of mask to carry out.Therefore depositing metal film on printed conductor, wherein the geometry of Metal contacts controls by mask.Can plated metal on silicon especially equably by the method.
Accompanying drawing explanation
To be shown by accompanying drawing according to the additional advantage of theme of the present invention and advantageous extension scheme and set forth in the following description.It should be noted that accompanying drawing only has descriptive characteristic and should not be considered at this and limit the present invention by any way.Wherein:
Fig. 1 illustrates the initial product for the manufacture of pressure transducer according to the present invention;
Fig. 2 illustrates the interstage with structurized silicon layer;
Fig. 3 illustrates another interstage of the diaphragm geometry with definition;
Fig. 4 illustrates another interstage of the silicon carbide layer with deposition;
Fig. 5 illustrate complete according to piezoresistance, pressure sensor of the present invention.
Embodiment
For piezoresistance, pressure sensor according to the present invention, particularly preferred manufacturing method according to the invention is shown in the drawings.Often kind of application can be used according to pressure transducer of the present invention.Pressure transducer according to the present invention is particularly useful for performing pressure survey very accurately when high temperature, such as in road vehicle application, such as, in cylinder head or in exhaust pipe, or also in industrial measurement technique.Utilize and such as can carry out relative pressure measurement and absolute pressure measurement according to sensor of the present invention.
Initial product for the manufacture of piezoresistance, pressure sensor according to the present invention shown in Figure 1.As the initial product for the manufacture of pressure transducer according to the present invention, silicon substrate or silicon substrate 1 are set.Silicon substrate 1 is constructed to SOI substrate (Silicon on Insulator, silicon-on-insulator).Draw shorter switching time and especially less power consumption thus.Therefore this is especially favourable in current situations, because power consumption is also little in leakage current.
Silicon substrate 1 can be made up of common unadulterated silicon and have the thickness of such as 700 μm.Silicon substrate 1 both when low temperature (such as in environment temperature), also according to the present invention possible until operation at high temperature more than 1000 DEG C time give sensor enough stability.
Except such silicon substrate 1 is to be outside equipped with soi film, especially silicon fiml 2.Silicon fiml 2 preferably adulterates, and especially p+ adulterates.Particularly preferred piezoresistive effect can be reached thus in the pressure transducer completed.Silicon fiml 2 can have >=thickness of 0.5 to≤20 μm.Particularly preferably, this film has the >=thickness of 1 to≤10 μm.Determine in the silicon of doping in semiconductor through being everlasting doping, such as, piezoresistive effect is just obvious especially when high temperature, therefore when high temperature, such as being particularly advantageous higher than application when 500 DEG C.Scale-up factor that can regulate in manufacture process in wide spectrum, that determine between the stretching, extension of diaphragm and the resistance variations of semiconductor resistor to the degree of silicon doping at this.
Silicon fiml 2 is arranged on electric insulation layer 3, and this electric insulation layer 3 is by silicon fiml 2 and silicon substrate 1 electrical isolation.This electric insulation layer 3 is preferably silicon dioxide (SiO
2) layer and be also referred to as buried oxide (BOX).But other electrically insulating materials, such as sapphire are also possible.Electric insulation layer 3 can have >=thickness of 50nm to≤2 μm.This layer particularly preferably have >=thickness of 100nm to≤1 μm.Almost leakage current can be avoided completely by arranging electric insulation layer 3.
The first method step for the manufacture of piezoresistance, pressure sensor according to the present invention shown in Figure 2.In the method step, structuring is carried out to silicon fiml 2.This means, generate piezoresistance 4 and printed conductor 5.So they are arranged especially in this wise, so that the distortion that the pressure detecting the diaphragm that will generate after a while in pressure drag mode causes.Therefore resistance 4 and printed conductor 5 are the component parts of the resistance meausring bridge of electricity.They such as can be arranged according to the principle of Wheatstone bridge.
The structuring of silicon fiml 2 such as can pass through reactive ion etching (Reactive Ion Etching(RIE, reactive ion etching)) or reactive ion dry ecthing (deep reactive ion etching(DRIE, deep reactive ion etch)) carry out.By this method, the microstructure with the ratio of extraordinary form ratio, the i.e. degree of depth and width in silicon layer 2 is possible, wherein can reach suitable constructional depth.
Another intermediate steps according to the inventive method shown in Figure 3.The removal silicon substrate 1 of part in the method step.The method step can particularly preferably be etched by KOH carries out.Therefore guide on silicon substrate 1 by moisture aqueous slkali, silicon is incorporated in solution as hydroxo complex by this aqueous slkali.Can wash off from basic structure and therefore remove silicon in this way.
Partly removal silicon substrate is within the scope of the present invention interpreted as, is only removed until electric insulation layer 3 completely in the x direction by silit.Produce vacancy 6 in a silicon substrate in this way.The diaphragm geometry being applicable to diaphragm well can be generated thus.Such as can produce the vacancy 6 of the channel-shaped turned as diaphragm geometry, vacancy 6 is constructed to circular at its trench bottom.But often kind that expect, be all possible for the geometry that the diaphragm applied in method step is after a while favourable.
According in the other method step of Fig. 4, depositing silicon carbide layers 7 on the diaphragm geometry produced according to Fig. 3.The layer that this silicon carbide layer is here especially made up of polycrystal carborundum (poly-SiC).This can be realized by often kind of possible method.Here particularly preferably PECVD deposits, i.e. the chemical vapor deposition of plasma support.Thus can with the thickness coating silicon carbide layer 7 without problems expected.Silicon carbide layer 7 especially has the thickness of 1 μm to 20 μm.
By generating the diaphragm geometry of expectation according to Fig. 3, silicon carbide layer 7 is now such as at the trench bottom structure diaphragm 8 of vacancy 6.Diaphragm 8 has until very high temperature, such as until 1000 DEG C or even higher than the stability that this temperature does not also reduce fatefully.The measurement pressure of the maximum possible allowed here can be affected by diaphragm thickness.The maximum measurement pressure of 5000 bar such as can be realized by 20 μm of thick diaphragms 8.
According in the last method step of Fig. 5, especially by utilizing the sputtering of mask to apply Metal contacts 9 on the printed conductor 5 generated according to Fig. 2.This Metal contacts 9, for being electrically connected with current source or analytic unit by sensor, is measured therefore can perform piezoresistive pressure.
Therefore manufacture shown in Figure 5 complete according to piezoresistance, pressure sensor of the present invention.
Therefore piezoresistance, pressure sensor according to the present invention comprises silicon substrate 1 as supporting mass, and this silicon substrate 1 is furnished with the silicon carbide layer 7 of structure diaphragm 8.Therefore silicon carbide layer 7 constructs diaphragm 8 with the form selected by method step shown in Figure 4.Face or on diaphragm 8 on substrate 1, namely on that side relative with silicon carbide layer 7 of silicon substrate 1, is furnished with electric insulation layer 3.This electric insulation layer 3 is in particular for avoiding leakage current and therefore increasing the accuracy of measurement.On electric insulation layer 3, namely on that side relative with diaphragm 8 of insulation course 3, be furnished with the distortion that piezoresistance 4 causes for the pressure detecting diaphragm 8 in pressure drag mode with the printed conductor 5 with Metal contacts 9.Piezoresistance 4 is especially arranged in the fringe region place of diaphragm 8.
If apply pressure on a sensor or on diaphragm 8, then diaphragm 8 is out of shape due to this pressure.In this edge at diaphragm 8, distortion nature is the most obvious.Due to the distortion of diaphragm 8, mechanical stress is applied on piezoresistance 4.Stress in piezoresistance 4 causes the resistance variations according to piezoresistive effect.By the preferred arrangements of piezoresistance 4 in the edge of diaphragm 8, therefore in resistance 4, realize mechanical stress strong especially, make the change triggered by piezoresistive effect of resistance value strong especially.Therefore, the king-sized sensitivity of this sensor is possible.
Resistance variations can with proportional pressure ground, reversibly and electronically analyze.At the measuring bridge place constructed by piezoresistance 4 and printed conductor 5, voltage that is especially constant, several volt (such as 5V) can be applied, to obtain good measurement result via Metal contacts 9.
Claims (10)
1. piezoresistance, pressure sensor, comprise silicon substrate (1), this silicon substrate (1) is furnished with the silicon carbide layer (7) of structure diaphragm (8), wherein also on that side relative with silicon carbide layer (7) of silicon substrate (1), be furnished with electric insulation layer (3), the distortion that the printed conductor (5) that side relative with diaphragm (8) of electric insulation layer (3) being furnished with piezoresistance (4) and having Metal contacts (9) causes for the pressure detecting diaphragm (8) in pressure drag mode.
2. pressure transducer according to claim 1, is characterized in that, silicon carbide layer (7) has the thickness of 1 μm to 20 μm.
3. pressure transducer according to claim 1 and 2, is characterized in that, silicon carbide layer (7) is constructed by polycrystal carborundum.
4. pressure transducer according to claim 1 and 2, is characterized in that, the silicon structure that piezoresistance (4) and printed conductor (5) are adulterated by p+.
5. pressure transducer according to claim 1 and 2, is characterized in that, electric insulation layer (3) is constructed by silicon dioxide.
6., for the manufacture of the method for piezoresistance, pressure sensor, comprise step:
-using silicon substrate (1), this silicon substrate is separated with silicon fiml (2) by electric insulation layer (3);
-structuring is carried out to generate piezoresistance (4) and printed conductor (5) to this silicon fiml (2);
-partly remove silicon substrate (1) until this electric insulation layer (3) is to generate diaphragm geometry;
-on diaphragm geometry depositing silicon carbide layers (7);
-on printed conductor (5), arrange Metal contacts (9).
7. method according to claim 6, is characterized in that, the structuring of this silicon fiml (2) is undertaken by reactive ion etching.
8. the method according to claim 6 or 7, is characterized in that, removal silicon substrate (1) is etched by KOH to be carried out.
9. the method according to claim 6 or 7, is characterized in that, the deposition of this silicon carbide layer (7) is undertaken by PECVD depositing SiC.
10. the method according to claim 6 or 7, is characterized in that, the structure of this Metal contacts (9) is undertaken by sputtering.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102010031197.9 | 2010-07-09 | ||
| DE201010031197 DE102010031197A1 (en) | 2010-07-09 | 2010-07-09 | Micro-electromechanical piezoresistive pressure sensor for use in motor car, has membrane arranged at insulating layer opposite side to piezoresistors and conductive paths that include metal contacts for detecting deformation of membrane |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102374918A CN102374918A (en) | 2012-03-14 |
| CN102374918B true CN102374918B (en) | 2015-06-17 |
Family
ID=44898766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110190682.3A Expired - Fee Related CN102374918B (en) | 2010-07-09 | 2011-07-08 | Micro-electromechanical Piezoresistive Pressure Sensor |
Country Status (4)
| Country | Link |
|---|---|
| CN (1) | CN102374918B (en) |
| DE (1) | DE102010031197A1 (en) |
| FR (1) | FR2962540A1 (en) |
| IT (1) | ITMI20111240A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102749167B (en) * | 2012-06-20 | 2014-11-05 | 北京大学 | Pressure sensor encapsulation structure containing silicon through holes |
| CN102980712B (en) * | 2012-12-10 | 2014-12-24 | 厦门大学 | Chip-type single-resistor piezoresistive pressure sensor with self-package structure |
| GB2532806A (en) * | 2014-11-25 | 2016-06-01 | Continental Automotive Systems Us Inc | Piezoresistive pressure sensor device |
| DE102014018268B4 (en) * | 2014-12-12 | 2018-12-20 | Tdk-Micronas Gmbh | contacting |
| DE102017212875A1 (en) | 2017-07-26 | 2019-01-31 | Robert Bosch Gmbh | Micromechanical device and method for producing a micromechanical device |
| CN108328568B (en) * | 2018-02-09 | 2019-07-05 | 中北大学 | A kind of SiC piezoresistance type acceleration sensor preparation method being adapted to hot environment |
| DE102020105210A1 (en) * | 2020-02-27 | 2021-09-02 | Tdk Electronics Ag | Sensor and method of manufacturing a sensor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0207450A2 (en) * | 1985-07-03 | 1987-01-07 | Mitsuboshi Belting Ltd. | Pressure-sensitive conductive rubber material |
| CN1657401A (en) * | 2004-02-17 | 2005-08-24 | 罗伯特·博世有限公司 | Differential pressure sensor |
| JP2006105624A (en) * | 2004-09-30 | 2006-04-20 | Sumitomo Osaka Cement Co Ltd | Diaphragm chip, pressure sensor using it, and method for manufacturing diaphragm chip |
| CN1790735A (en) * | 2004-11-08 | 2006-06-21 | 株式会社电装 | Silicon carbide semiconductor device and method for manufacturing the same |
| CN101017807A (en) * | 2006-02-08 | 2007-08-15 | 松下电器产业株式会社 | Semiconductor device and manufacture method thereof |
| CN101440481A (en) * | 2007-11-21 | 2009-05-27 | 中国科学院半导体研究所 | Method for preparing low-resistance silicon carbide on silicon oxide |
-
2010
- 2010-07-09 DE DE201010031197 patent/DE102010031197A1/en not_active Withdrawn
-
2011
- 2011-07-04 IT ITMI20111240 patent/ITMI20111240A1/en unknown
- 2011-07-07 FR FR1156148A patent/FR2962540A1/en not_active Withdrawn
- 2011-07-08 CN CN201110190682.3A patent/CN102374918B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0207450A2 (en) * | 1985-07-03 | 1987-01-07 | Mitsuboshi Belting Ltd. | Pressure-sensitive conductive rubber material |
| CN1657401A (en) * | 2004-02-17 | 2005-08-24 | 罗伯特·博世有限公司 | Differential pressure sensor |
| JP2006105624A (en) * | 2004-09-30 | 2006-04-20 | Sumitomo Osaka Cement Co Ltd | Diaphragm chip, pressure sensor using it, and method for manufacturing diaphragm chip |
| CN1790735A (en) * | 2004-11-08 | 2006-06-21 | 株式会社电装 | Silicon carbide semiconductor device and method for manufacturing the same |
| CN101017807A (en) * | 2006-02-08 | 2007-08-15 | 松下电器产业株式会社 | Semiconductor device and manufacture method thereof |
| CN101440481A (en) * | 2007-11-21 | 2009-05-27 | 中国科学院半导体研究所 | Method for preparing low-resistance silicon carbide on silicon oxide |
Non-Patent Citations (1)
| Title |
|---|
| 孙金坛,邱德润.掺硼对非晶碳化硅膜的影响.《材料科学与工艺》.1994,第02卷(第01期),28-32. * |
Also Published As
| Publication number | Publication date |
|---|---|
| FR2962540A1 (en) | 2012-01-13 |
| DE102010031197A1 (en) | 2012-01-12 |
| ITMI20111240A1 (en) | 2012-01-10 |
| CN102374918A (en) | 2012-03-14 |
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