CN1608146A - Apparatus for the generation and supply of fluorine gas - Google Patents
Apparatus for the generation and supply of fluorine gas Download PDFInfo
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- CN1608146A CN1608146A CNA028261534A CN02826153A CN1608146A CN 1608146 A CN1608146 A CN 1608146A CN A028261534 A CNA028261534 A CN A028261534A CN 02826153 A CN02826153 A CN 02826153A CN 1608146 A CN1608146 A CN 1608146A
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B15/00—Operating or servicing cells
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B1/00—Electrolytic production of inorganic compounds or non-metals
- C25B1/01—Products
- C25B1/24—Halogens or compounds thereof
- C25B1/245—Fluorine; Compounds thereof
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25B—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES FOR THE PRODUCTION OF COMPOUNDS OR NON-METALS; APPARATUS THEREFOR
- C25B15/00—Operating or servicing cells
- C25B15/02—Process control or regulation
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- Chemical Kinetics & Catalysis (AREA)
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- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Automation & Control Theory (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
- Drying Of Semiconductors (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Abstract
Provided is an apparatus for fluorine gas generation and supply that is disposed in the gas supply system of a semiconductor processing system and that in the event of abnormalities in the apparatus enables back up by a safe and inexpensive structure. An apparatus 30 for the generation and supply of gas is disposed in the gas supply system of a semiconductor processing system. This apparatus 30 contains an electrolytic cell 34 that generates fluorine gas and a cylinder 62 that holds a substitute gas selected from the group consisting of nitrogen fluoride, sulfur fluoride, and chlorine fluoride. The electrolytic cell 34 and cylinder 62 are connected to a gas switching section 56 that selectively supplies a gas utilization section with fluorine gas from the electrolytic cell 34 or with substitute gas from the cylinder 62. A controller 40 controls the gas switching section 56 in such a manner that, upon detection of an abnormal state at the electrolytic cell 34 by an electrolytic cell detector 36, substitute gas is supplied from the cylinder 62 to the gas utilization section.
Description
Technical field
The present invention relates in a kind of gas supply system that is arranged on the semiconductor system of processing and produce and the equipment of supply fluorine gas." semiconductor machining " is meant in order go up to make semiconductor device and/or semiconductor device syndeton (interconnection line for example at the substrate of processing (target substrate) in this article, electrode) by in a particular manner at target substrate, for example forms the various processing that semi-conductor, isolator and conductor layer carry out on semiconductor wafer or the LCD substrate.
Background technology
When making semiconductor device, multiple semiconductor fabrication processes, for example film formation, etching and diffusion are for example carried out on semiconductor wafer or the LCD substrate all at target substrate.The semiconductor machining system that is used to carry out these processing adopts fluorine type gas as processing gas in various application occasions, for example be used for the etching of silicon film and silica membrane or in order to clean the inside of Processing Room, these application must not be confined to semi-conductive processing.
Fluorine type processing gas is usually as a kind of being filled in the fluorine cpd in the cylinder and can being obtained by the gas supply system of semiconductor system of processing of having got ready.Seldom from their basic precursor, for example the scene produces such gas in the fluorine gas.Its reason not merely relates to the integrity problem of gaseous fraction, is full of for example high pressure of fluorine gas (5kg/cm at least usually of strong oxidizer but also relate to one
2) cylinder is placed on the danger of the extreme that causes in the gas supply system of semiconductor system of processing.
On the other hand, U.S. Patent No. 5688384 discloses a kind of equipment of controlling the off/on switches of fluorine gas generation as required automatically.This equipment use one produces the electrolyzer of fluorine gas as its fluorine gas generation module by electrolysis of hydrogen fluoride.Because this electrolysis-type equipment can produce fluorine gas near under the barometric point on demand, so they can avoid the safety problem relevant with the installation of fluorine gas cylinder.
When above-mentioned fluorine gas being produced and supply equipment when being placed in the gas supply system of semiconductor system of processing, even unusual, also be necessary to provide a stand-by plant in order to prevent the disturbance in the operation of main processing units when in this fluorine gas generation and supply equipment, taking place.In a common scheme, two fluorine gas are produced and supply equipment is installed in the gas supply system and rotate as on-line unit and stand-by facilities and to move.But this alterant makes this gas supply system have high prime cost and high running cost.And, although the fluorine gas cylinder also can use as a stand-by plant, be placed on owing to the high-pressure fluorine cylinder in the gas supply system of semiconductor system of processing and cause safety problem.
Summary of the invention
Exploitation the present invention considers above-mentioned the problems of the prior art.The fluorine gas that the purpose of this invention is to provide in a kind of gas supply system that is arranged on the semiconductor system of processing produces and supply equipment, and occurs under the unusual situation by safety and inexpensive structure realization standby at this equipment.
Specific purposes of the present invention provide a kind of equipment that can on-the-spot can produce and supply fluorine gas again as required.Here used " scene " is meant and is used to produce and supplies the mechanism of fluorine gas and specific main processing units that for example the main processing units of semiconductor system of processing combines or assembles." as required " be meant that gas can follow the control of its necessary parts and respond the requirement of main processing units and regularly supply.
First aspect of the present invention is, a kind ofly produce and supply fluorine gas and be arranged on equipment in the gas supply system of semiconductor system of processing, described equipment is characterised in that to have with lower device: one produces the electrolyzer of fluorine gas by electrolysis of hydrogen fluoride in an electrolytic bath, and this electrolytic bath comprises the melting salt of fluorinated hydrogen; The cylinder of a kind of place of gas that one storage is selected from (gas) group of being made up of Nitrogen trifluoride, sulfur fluoride and Chlorine fluoride; One is connected on this electrolyzer and the cylinder and uses from the fluorine gas of this electrolyzer or supply the gas switch area in a gas utilization district from the place of gas of this cylinder selectively; One detects the electrolytic cell detector of the state of this electrolyzer; And one apply control so that supply with the controller of place of gas to gas utilization district from cylinder to the gas switch area when being detected the error state (ERST) of electrolyzer by this electrolytic cell detector.
Second aspect of the present invention is a kind of equipment with following supplementary features according to first aspect: this electrolytic cell detector detects a kind of state of the component of representing electrolytic bath.
The 3rd aspect of the present invention is a kind of equipment according to the following subordinate feature of having of second aspect: this electrolytic cell detector detects a kind of state of selecting from current characteristics, liquid level and the temperature of this electrolytic bath.
The 4th aspect of the present invention is, a kind of according to any one equipment in first to the 3rd aspect, it is characterized in that, this equipment also has one and can detect from the path detector of the error state (ERST) of electrolyzer in the gas feed lines of gas utilization district supply fluorine gas, and described controller applies control so that supply with place of gas from cylinder to gas utilization district to the gas switch area when being detected the error state (ERST) of electrolyzer by electrolytic cell detector or when the error state (ERST) that is detected by path detector in the gas feed lines.
The 5th aspect of the present invention is, a kind ofly produce and supply fluorine gas and be arranged on equipment in the gas supply system of semiconductor system of processing, described equipment is characterised in that to have: one produces the electrolyzer of fluorine gas by electrolysis of hydrogen fluoride in an electrolytic bath, and this electrolytic bath comprises the melting salt of fluorinated hydrogen; The cylinder of a kind of place of gas that one storage is selected from (gas) group of being made up of Nitrogen trifluoride, sulfur fluoride and Chlorine fluoride; One is connected on this electrolyzer and the cylinder and uses from the fluorine gas of this electrolyzer or supply the gas switch area in a gas utilization district from the place of gas of this cylinder selectively; One can detect from the path detector of the error state (ERST) of electrolyzer in the gas feed lines of gas utilization district supply fluorine gas; And one apply control so that supply with the controller of place of gas to gas utilization district from cylinder to the gas switch area when the error state (ERST) that is detected by path detector in the gas feed lines.
The 6th aspect of the present invention is, a kind of equipment according to the 4th or the 5th aspect, it is characterized in that, this gas feed lines have a control from electrolyzer to the pressure of the fluorine gas of gas switch area supply and the buffer zone of flow velocity, and this path detector has a buffering detector that detects the state of this buffer zone.
The 7th aspect of the present invention be, a kind of equipment according to the 6th aspect is characterized in that, this buffer zone has the compressor of a pair of fluorine gas pressurization from electrolyzer, and this buffering detector detects the operational stage of this compressor.
The 8th aspect of the present invention be, a kind of equipment according to the 6th aspect is characterized in that, this buffer zone has the dashpot of an interim storage from the fluorine gas of electrolyzer, and should the buffering detector detect the pressure in this dashpot.
The 9th aspect of the present invention is, a kind of equipment according to the 6th aspect, it is characterized in that, this buffer zone have one with specific flow velocity from the flow governor of electrolyzer to gas switch area supply fluorine gas, and should buffering detector detect fluorine gas flow velocity at described flow governor place.
The of the present invention ten aspect be, and be a kind of according to any one equipment in first to the 9th aspect, it is characterized in that this place of gas comprises Chlorine fluoride.
In addition, embodiments of the invention provide multiple embodiments of the present invention, and can obtain various embodiments of the present invention by the reasonable combination to a plurality of disclosed element.For example, when obtaining a some of them element from for the given a whole set of element of this embodiment during the embodiments of the invention of elliptical, these elliptical elements can obtain reasonable supplement by the conventional known technology in the real work of acquired embodiments of the invention.
Description of drawings
Fig. 1 comprises one and illustrates and produce with the fluorine gas of one embodiment of the invention and the synoptic diagram of the semiconductor system of processing that supply equipment combines.
Fig. 2 comprises a synoptic diagram that an example improvement of the semiconductor processing equipment that is used in combination with gas supply system shown in Figure 1 is shown.
Fig. 3 comprises one the fluorine gas generation of another embodiment of the present invention and the synoptic diagram of supply equipment is shown.
Fig. 4 comprises one the fluorine gas generation of another embodiment of the present invention and the synoptic diagram of supply equipment is shown.
Embodiment
Below with reference to the description of drawings embodiments of the invention.In the following description, those element with substantially identical 26S Proteasome Structure and Function are endowed a common reference number and only where necessary to its repeat specification.
Fig. 1 comprises one and illustrates and the synoptic diagram that is used to produce and supplies the semiconductor system of processing that an embodiment of the equipment of the present invention of fluorine gas combines.This semiconductor machining system comprises one and for example processes the semiconductor processing equipment 10 of for example film formation, etching or diffusion on semiconductor wafer or the LCD substrate at target substrate.
This semiconductor processing equipment 10 has and holds the Processing Room 12 that target substrate and semiconductor machining are finished therein.In this Processing Room 12, be provided with one not only as lower electrode but also as the erecting stage 14 (supporting member) that is used for the platform of installation targets substrate.One top electrode 16 also is arranged in this Processing Room 12 towards erecting stage 14.Can stride across two electrodes 14 and 16 from a RF power supply 15 and apply the electric RF field that in Processing Room 12, forms of RF (high frequency) to convert processing gas to plasma body.One exhaust system 18 is connected to the lower region of this Processing Room 12 so that the inner vacuum that also forms therein of this Processing Room of finding time.One gas supply system 20 is connected to the upper area of this Processing Room 12 so that the supply processing gas.
Fig. 2 comprises one the synoptic diagram that one of the semiconductor processing equipment that can be used in combination with gas supply system 20 shown in Figure 1 improves example 10x is shown.This semiconductor processing equipment 10x has the Processing Room 12 that holds target substrate and finish semiconductor machining therein.One erecting stage 14 (supporting member) is arranged in this Processing Room 12 so that the installation targets substrate.One exhaust system 18 is connected to the lower region of this Processing Room 12 so that the inner vacuum that also forms therein of this Processing Room of finding time.One remote plasma chamber 13 is connected to the upper area of this Processing Room 12 so that form plasma body.The outside surface of this remote plasma chamber 13 twines a coil antenna 17.Applying RF (high frequency) electricity from RF power supply 15 to coil antenna 17 makes in this remote plasma chamber 13 and to form an induction field so that convert processing gas to plasma body.One gas supply system 20 is connected to the upper area of this remote plasma chamber 13 so that the supply processing gas.
Refer again to Fig. 1, a mobile directorial area 22 is arranged in the gas supply system 20; This flow management section 22 can be with any specified gas, the processing gas that for example is used to carry out the processing gas of semiconductor machining or is used to clean the inside of Processing Room 12 supplies in the Processing Room 12 with specific flow velocity, and can also carry out the switching of selective gas.One gas storage section 24 is connected on this flow management section 22.This gas storage section 24 comprises a plurality of gas sources and stores various active and/or rare gas element.One gas by a kind of reaction process generation fluorine gas type processing gas produces district 26 and also is connected on this flow management section 22.
The equipment of the present invention 30 that is used to produce and supplies fluorine gas is connected to flow management section 22 in the present embodiment and gas produces district 26.More particularly, be somebody's turn to do (fluorine gas) generation and supply equipment 30 or directly supply fluorine gas, perhaps be used for producing district 26 and supply initial fluorine gas (switching valve is not shown) to gas to flow management section 22.This gas produces district 26 and can produce for example a kind of by initial fluorine gas and the another kind of halogen gas interhalogen fluorination compound gas that obtains of chlorine reaction for example.
(fluorine gas) produces and supply equipment 30 comprises one and produces fluorine gas (F by electrolysis of hydrogen fluoride in an electrolytic bath
2) electrolyzer 34, this electrolytic bath comprises the melting salt of fluorinated hydrogen.This melting salt comprises the mixture (KF/2HF) of a Potassium monofluoride (KF) and hydrogen fluoride (HF) or the mixture of hydrogen fluoride and Fremy ' s salt.Electrolyzer 34 is connected to a supply hydrogen fluoride, promptly takes place on the hydrogen fluoride source 32 of parent material of loss.One detector 36 is arranged in the electrolyzer 34 so that detect the current characteristics, liquid level, temperature etc. of the electrolytic bath of the state that changes as a kind of composition of representing electrolytic bath.The detected result that is produced by detector 36 sends a controller 40 to.The detected result that electrolyzer 34 produces according to detector 36 is replenished the parent material of hydrogen fluoride-promptly be consumed from hydrogen fluoride source 32---and use an amount threshold to control as standard by controller 40.
Cross a buffer zone 42 by the fluorine gas of electrolyzer 34 generations and supply to a gas switch area 56; The purpose of this buffer zone 42 is pressure and flow velocitys that control is present in the fluorine gas in the supply line 38.This buffer zone 42 has a compressor 44 so that the fluorine gas pressurization to producing with barometric point substantially in electrolyzer 34, one holds the dashpot 46 of fluorine gas temporarily, and one supplies with the flow governor 48 of fluorine gas from dashpot 46 to gas switch area 56 with specific flow velocity.One operations detector 50 is arranged on the compressor 44 so that detect the operational stage of compressor 44.One pressure detector 52 is arranged on the dashpot 46 so that detect pressure in this dashpot 46.One flow velocity detector 54 is arranged on the flow governor 48 so that detect the flow velocity of the fluorine gas in this flow governor 48.Be transmitted to controller 40 by these detectors 50,52 and 54 detected results that produce.
In order to occur unusual in the supply line that prevents to extend at electrolyzer 34 (fluorine gas generator), from electrolyzer 34 gas utilization district or the fluorine gas feed lines (comprising buffer zone 42) spare area 60 is set.This spare area 60 has the cylinder 62 (or cylinder unit) that holds as the place of gas of fluorine gas surrogate.Adjust to a specific flow velocity and be supplied to gas switch area 56 by flow governor 66 from the place of gas that the valve 64 of cylinder 62 is discharged.
Place of gas is selected from (gas) group of being made up of Nitrogen trifluoride, sulfur fluoride and Chlorine fluoride.In these gases, because at room temperature low reactive of Nitrogen trifluoride and because it is a kind of gas of safety, thereby gas is especially satisfactory as an alternative to use Nitrogen trifluoride.When using Nitrogen trifluoride (NF
3) as an alternative during gas, need to set flow governor and make it automatically the flow velocity of Nitrogen trifluoride is being become 2/3rds of about fluorine gas flow velocity when fluorine gas switches to Nitrogen trifluoride.This setting can keep a constant working ability in the position of using place of gas.Preferred place of gas also can change with the type of processing and the character of semiconductor processing equipment.For example, Nitrogen trifluoride (NF
3) preferably under the situation of plasma cleaning, be used as place of gas, and Chlorine fluoride preferably is used as place of gas under the situation of thermal cleaning.
When detecting error state (ERST) with box lunch in electrolyzer 34 and/or in buffer zone 42, controller 40 pilot-gas switch areas 56 supply place of gas to gas utilization district (main processing units) from cylinder 62.Follow this gas in gas switch area 56 to switch, controller 40 also is adjusted in the state of the valve 64 on the cylinder 62 and regulates the opening/closing state of the operation (for example, the operation of compressor 44) of buffer zone 42.
Error state (ERST) in electrolyzer 34 detects by electrolytic cell detector 36.Specifically, detector 36 test example are as current characteristics, liquid level or temperature as a kind of electrolytic bath of state of the change of component of representing electrolytic bath, and send (detection) result to controller 40.Controller 40 compares detected value and a pre-set threshold and determines that electrolytic bath 34 is under the normal state or has entered an error state (ERST) then.
Equally, the error state (ERST) in buffer zone 42 is by constituting three detectors of buffering detector, and promptly operations detector 50, pressure detector 52 and flow rate detection device 54 detect.Specifically, these detectors 50,52 and 54 detect respectively in the operational stage, dashpot 46 of compressor 44 pressure and at the fluorine gas flow velocity at flow governor 48 places, and send its (detection) result to controller 40.This controller is with these detected values and pre-set threshold compares and determine that this buffer zone 42 is under the normal state or has entered an error state (ERST) then.
Therefore, detector 36,50,52 and 54 is separately positioned on that fluorine gas produces and each of supply side mainly formed in the member, this set make can by controller 40 be identified in (fluorine gas) produce and supply side on the position and the type of error state (ERST).This makes controller 40 carry out the multiple information processing relevant with the control of gas switch area 56 with type according to the position of abnormal conditions, comprise the time that gas switches of for example determining, each mainly forms the program of the state of member to carry out an inspection before gas switches, transmit the guard signal and a manually operated indication of the position etc. of this error state (ERST) of notifying operation person.
The cylinder that (fluorine gas) shown in Figure 1 produces and supply equipment 30 uses a place of gas is as its spare area, rather than provides from electrolyzer 34 and extend to and comprise the fluorine gas generation of buffer zone 42 and an additional repetition (structure) of Supply Structure.This makes the initial cost of gas supply system and operating cost all lower.(gas) formed from Nitrogen trifluoride, sulfur fluoride and Chlorine fluoride is provided although the place of gas of selecting the group is filled in the cylinder, can't produce the problem relevant with the high-pressure fluorine cylinder and thereby see it is preferred from the viewpoint of safety.
Fig. 3 comprises the fluorine gas generation of another embodiment of the present invention and the synoptic diagram of supply equipment.Controller 40 is only with reference to detecting from the detector of the error state (ERST) of electrolyzer 34 to the gas feed lines of gas utilization district supply fluorine gas in this embodiment, and particularly only with reference to produce by detector 50,52 and 54 to the status detection result of buffer zone 42 and pilot-gas switch area 56.The detected result to the liquid level of electrolytic bath that is produced by detector 36 does not send controller 40 to, but is used for replenishing hydrogen fluoride from hydrogen fluoride source 32 to electrolyzer 34 by a controller 70.
The error state (ERST) at electrolyzer 34 places generally also causes the state of the fluorine gas that produces unusual or disturbance to occur.As a result, pilot-gas switch area 56 necessary essential informations can be by detecting from the error state (ERST) of electrolyzer 34 to the gas feed lines of gas utilization district supply fluorine gas, for example, and the error state (ERST) of the fluorine gas in buffer zone 42 downstreams and obtaining.But, in this case, need make an independent detection and irrelevant to the control of gas switch area 56 to any error state (ERST) of electrolyzer 34.
Fig. 4 comprises the fluorine gas generation of another embodiment of the present invention and the synoptic diagram of supply equipment.This embodiment is not used in the detector of the error state (ERST) of compressor 44, dashpot 46 and the flow governor 48 of detection in buffer zone 42.Provide one to detect the pressure in gas supply pipe and the detector 72 of flow velocity, this detector 72 is as detecting from the detector of the unusual condition of electrolyzer 34 in gas utilization district supplies with the gas feed lines of fluorine gas.Controller 40 is not only with reference to the status detection result of the electrolyzer 34 that is provided by detector 36, and with reference to provide by detector 72 to the detected result of pressure in the fluorine gas supply line and flow velocity and pilot-gas switch area 56.Shown in the long and short dash line among Fig. 4, detector 72 also can be arranged on the downstream of gas switch area 56.
Error state (ERSTies in the buffer zone 42 generally also can cause the pressure in the fluorine gas supply line and the error state (ERST) or the situation of flow velocity.As a result, pilot-gas switch area 56 necessary essential informations can obtain by detecting the pressure in the fluorine gas supply line in buffer zone 42 downstreams and the error state (ERST) of flow velocity.
Although those skilled in the art can design multiple modification and change within the technical scope of thought of the present invention, should be understood that these modification and change also within the scope of the invention.
As explained in detail above, the fluorine gas that the invention provides in a kind of gas supply system that is arranged on the semiconductor system of processing produces and supply equipment, and occurs under the unusual situation by safety and inexpensive structure realization standby at this equipment.
Claims (10)
1. produce and supply fluorine gas and be arranged on equipment in the gas supply system of semiconductor system of processing, described equipment is characterised in that to have:
One by comprising that one electrolysis of hydrogen fluoride in the electrolytic bath of melting salt of fluorinated hydrogen produces the electrolyzer of fluorine gas,
The cylinder of a kind of place of gas that one storage is selected from the group of being made up of Nitrogen trifluoride, sulfur fluoride and Chlorine fluoride,
One is connected on this electrolyzer and the cylinder and uses from the fluorine gas of this electrolyzer or from the place of gas of this cylinder and supply the gas switch area in a gas utilization district selectively,
One detects the electrolytic cell detector of the state of this electrolyzer, and
One applies control so that supply with the controller of this place of gas to this gas utilization district from this cylinder to this gas switch area when this electrolytic cell detector detects an error state (ERST) of this electrolyzer.
2. the equipment that is used to produce and supply fluorine gas according to claim 1 is characterized in that, this electrolytic cell detector detects a kind of state of the component of representing this electrolytic bath.
3. the equipment that is used to produce and supply fluorine gas according to claim 2 is characterized in that, this electrolytic cell detector detects a kind of state of selecting from current characteristics, liquid level and the temperature of this electrolytic bath.
4. according to any one described equipment that is used to produce and supply fluorine gas in the claim 1 to 3, it is characterized in that, this equipment also has one and can detect from the path detector of the error state (ERST) of this electrolyzer in the gas feed lines of this gas utilization district supply fluorine gas, and described controller applies control so that supply with this place of gas from this cylinder to this gas utilization district to this gas switch area when this electrolytic cell detector detects an error state (ERST) of this electrolyzer or during the error state (ERST) in this path detector detects this gas feed lines.
5. produce and supply fluorine gas and be arranged on equipment in the gas supply system of semiconductor system of processing, described equipment is characterised in that to have:
One by comprising that one electrolysis of hydrogen fluoride in the electrolytic bath of melting salt of fluorinated hydrogen produces the electrolyzer of fluorine gas,
The cylinder of a kind of place of gas that one storage is selected from the group of being made up of Nitrogen trifluoride, sulfur fluoride and Chlorine fluoride,
One is connected on this electrolyzer and the cylinder and uses from the fluorine gas of this electrolyzer or from the place of gas of this cylinder and supply the gas switch area in a gas utilization district selectively,
One can detect from the path detector of the error state (ERST) of this electrolyzer in the gas feed lines of this gas utilization district supply fluorine gas, and
During one a error state (ERST) in this path detector detects this gas feed lines this gas switch area is applied control so that supply with the controller of this place of gas to this gas utilization district from this cylinder.
6. according to claim 4 or the 5 described equipment that are used to produce and supply fluorine gas, it is characterized in that, this gas feed lines have a control from this electrolyzer to the pressure of the fluorine gas of this gas switch area supply and the buffer zone of flow velocity, and this path detector has a buffering detector that detects the state of this buffer zone.
7. the equipment that is used to produce and supply fluorine gas according to claim 6 is characterized in that, this buffer zone has a pair of compressor that pressurizes from the fluorine gas of this electrolyzer, and this buffering detector detects the operational stage of this compressor.
8. the equipment that is used to produce and supply fluorine gas according to claim 6 is characterized in that, this buffer zone has the dashpot of an interim storage from the fluorine gas of this electrolyzer, and should the pressure of buffering detector detection in this dashpot.
9. the equipment that is used to produce and supply fluorine gas according to claim 6, it is characterized in that, this buffer zone have one from this electrolyzer with the flow governor of a specific flow velocity to this gas switch area supply fluorine gas, and should buffering detector detect fluorine gas flow velocity at described flow governor place.
10. according to any one described equipment that is used to produce and supply fluorine gas in the claim 1 to 9, it is characterized in that this place of gas comprises Chlorine fluoride.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP397278/2001 | 2001-12-27 | ||
| JP2001397278A JP3725822B2 (en) | 2001-12-27 | 2001-12-27 | Fluorine gas generation and supply equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1608146A true CN1608146A (en) | 2005-04-20 |
Family
ID=19189170
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNA028261534A Pending CN1608146A (en) | 2001-12-27 | 2002-12-20 | Apparatus for the generation and supply of fluorine gas |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US20050161321A1 (en) |
| EP (1) | EP1461475A2 (en) |
| JP (1) | JP3725822B2 (en) |
| KR (1) | KR20040075034A (en) |
| CN (1) | CN1608146A (en) |
| AU (1) | AU2002367093A1 (en) |
| TW (1) | TWI252214B (en) |
| WO (1) | WO2003056066A2 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3569277B1 (en) * | 2003-05-28 | 2004-09-22 | 東洋炭素株式会社 | Current control method and current control device for gas generator |
| JP3725145B2 (en) * | 2003-07-14 | 2005-12-07 | 東洋炭素株式会社 | Molten salt electrolytic bath control device and control method thereof |
| JP4018726B2 (en) | 2006-02-07 | 2007-12-05 | 東洋炭素株式会社 | Semiconductor manufacturing plant |
| JP5659491B2 (en) * | 2009-01-30 | 2015-01-28 | セントラル硝子株式会社 | Semiconductor manufacturing equipment including fluorine gas generator |
| KR20120098683A (en) * | 2009-10-16 | 2012-09-05 | 솔베이 플루오르 게엠베하 | High-purity fluorine gas, the production and use thereof, and a method for monitoring impurities in a fluorine gas |
| US20130017644A1 (en) * | 2011-02-18 | 2013-01-17 | Air Products And Chemicals, Inc. | Fluorine Based Chamber Clean With Nitrogen Trifluoride Backup |
| TWI458843B (en) * | 2011-10-06 | 2014-11-01 | Ind Tech Res Inst | Evaporation apparatus and method of forminf organic film |
| CN104651873A (en) * | 2014-12-22 | 2015-05-27 | 四川聚核科技有限公司 | Intelligentized container modularized middle-temperature electrolytic fluorine-preparing device |
| JP2016134569A (en) * | 2015-01-21 | 2016-07-25 | 株式会社東芝 | Semiconductor manufacturing equipment |
| FR3111133A1 (en) * | 2020-06-04 | 2021-12-10 | Université du Mans | AUTOMATED CHEMICAL TREATMENT PROCESS OF A SOLID SUBSTRATE BY A FLUORATION LINE |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AU543291B2 (en) * | 1981-01-06 | 1985-04-18 | Medishield Corp. Ltd. | Gas switching device |
| US5421957A (en) * | 1993-07-30 | 1995-06-06 | Applied Materials, Inc. | Low temperature etching in cold-wall CVD systems |
| GB9418598D0 (en) * | 1994-09-14 | 1994-11-02 | British Nuclear Fuels Plc | Fluorine cell |
| WO2000014782A1 (en) * | 1998-09-03 | 2000-03-16 | Nippon Sanso Corporation | Feed device for large amount of semiconductor process gas |
| JP2001267241A (en) * | 2000-03-10 | 2001-09-28 | L'air Liquide | Method and apparatus for cleaning, and method and apparatus for etching |
| WO2001077412A1 (en) * | 2000-04-07 | 2001-10-18 | Toyo Tanso Co., Ltd. | Apparatus for generating fluorine gas |
-
2001
- 2001-12-27 JP JP2001397278A patent/JP3725822B2/en not_active Expired - Fee Related
-
2002
- 2002-12-20 CN CNA028261534A patent/CN1608146A/en active Pending
- 2002-12-20 WO PCT/EP2002/014909 patent/WO2003056066A2/en not_active Application Discontinuation
- 2002-12-20 KR KR10-2004-7010078A patent/KR20040075034A/en not_active Application Discontinuation
- 2002-12-20 US US10/500,406 patent/US20050161321A1/en not_active Abandoned
- 2002-12-20 EP EP02805785A patent/EP1461475A2/en not_active Withdrawn
- 2002-12-20 AU AU2002367093A patent/AU2002367093A1/en not_active Abandoned
- 2002-12-23 TW TW091136993A patent/TWI252214B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI252214B (en) | 2006-04-01 |
| AU2002367093A8 (en) | 2003-07-15 |
| US20050161321A1 (en) | 2005-07-28 |
| KR20040075034A (en) | 2004-08-26 |
| EP1461475A2 (en) | 2004-09-29 |
| WO2003056066A2 (en) | 2003-07-10 |
| JP2003193278A (en) | 2003-07-09 |
| WO2003056066A3 (en) | 2004-03-25 |
| JP3725822B2 (en) | 2005-12-14 |
| TW200306950A (en) | 2003-12-01 |
| AU2002367093A1 (en) | 2003-07-15 |
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