CN1601774A - Structure of LED and its mfg method - Google Patents
Structure of LED and its mfg method Download PDFInfo
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- CN1601774A CN1601774A CN 200410085823 CN200410085823A CN1601774A CN 1601774 A CN1601774 A CN 1601774A CN 200410085823 CN200410085823 CN 200410085823 CN 200410085823 A CN200410085823 A CN 200410085823A CN 1601774 A CN1601774 A CN 1601774A
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Abstract
Metal base plate with high conductivity and high reflectance is adopted in the invention instead of traditional extinctive gallium arsenide base plate, and after diodes are made, two adjacent LED are connected in series through semiconductor fabricating process. Mirror protective layer is adhibited in order to protect metal reflecting layer p and n poles, in which one is higher and the other is lower, of epitaxy chip of LED so as to form LED with p and n poles being at same side. Trench at joint place between two adjacent epitaxy chips of LED is etched out, and a dielectric layer is filled into the trench in order to protect sidewall of adjacent LED. The invention raises luminous efficiency of LED, and increases luminous intensity.
Description
Technical field:
The invention relates to a kind of light-emitting diode (Light Emitting Diode; LED) structure of wafer and manufacture method thereof.Particularly a kind of relevant p, n two electrodes AlGaInP (AlGaInP) and aluminum gallium arsenide light-emitting diode structure and manufacture method thereof in the same way.
Background technology:
Traditional AlGaInP light-emitting diode has a double-heterostructure (Double Heterostructure; DH), its structure as shown in Figure 5, be on n p type gallium arensidep (GaAs) substrate (Substrate) 3, to grow up an aluminium content at the active layer 5 of the following coating layer 4 of the n of 70%-100% type (AlxGa1-x) 0.5In0.5P, one (AlxGa1-x) 0.5In0.5P, an aluminium content last coating layer 6 at the p of 70%-100% type (AlxGa1-x) 0.5In0.5P, and the electric current dispersion layer of the high energy gap of a p type (Current Spreading Layer) 7, the material of this one deck can be gallium phosphide, gallium arsenide phosphide, InGaP or aluminum gallium arsenide etc.
Then utilize the composition that changes active layer 5, just can change the lumination of light emitting diode wavelength, make the wavelength of its generation from the 650nm redness to the pure green of 555nm.But this traditional light-emitting diode has a shortcoming, be exactly the light that active layer produces, when down being incident to GaAs substrate 3, because the energy gap of GaAs substrate 3 is less, therefore the light that is incident to GaAs substrate 3 will be absorbed, and can't generate high efficiency light-emitting diode.
For fear of the extinction of substrate 3, have some documents to expose the technology of LED traditionally, yet these technology all have its shortcoming and restriction.For example people such as Sugawara is published in [Appl.Phys Lett.Vol.61,1775-1777 (1992)] and has just disclosed a kind of utilization and add one deck and disperse Bragg reflecting layer (Distributed Bragg Reflector; DBR) on the GaAs substrate, use the light that is reflected into directive GaAs substrate, and reduce the absorption of GaAs substrate.
People such as Kish are published in the document of [Appl.Phys Lett.Vol.64, No.21,2839, (1994)], and name is called " Very high-efficiency semiconductor wafer-bonded transparent-substrate (Al
xGa
1-x)
0.5In
0.5P/GaP ", disclose the transparent mode substrate (Transparent-Substrate of a kind of adhesive wafer (Wafer bonding); TS) (Al
xGa
1-x)
0.5In
0.5The P/GaP light-emitting diode.This TS AlGaInP LED utilizes gas phase brilliant method (VPE) of heap of stone and P type gallium phosphide (GaP) window (Window) layer of formation thickness quite thick (about 50 μ m), and then with known chemical method for etching, optionally removes N p type gallium arensidep (GaAs) substrate.Then with this N type (Al that exposes
xGa
1-x)
0.5In
0.5Coating layer under the P is bonded on the N type gallium phosphide substrate that thickness is about 8-10mil.
Because this wafer bonding (Wafer Bonding) directly bonds together two kinds of III-V compound semiconductors, therefore will be under higher temperature, heating and pressurizing a period of time just can finish.With regard to luminosity, prepared by this way TS AlGaInP LED is than the absorption substrate (Absorbing-Substrate of tradition; AS) more than the big twice of the brightness of AlGaInP LED.Yet the shortcoming of this TS AlGaInP LED is exactly that manufacture process is too numerous and diverse, and can have the high-ohmic of a non-ohm contact at the joint interface usually.
Another kind of conventional art, for example people such as Horng is published in [Appl.Phys.Lett.Vol.75, No.20,3054 (1999) documents, name is called " AlGaInP light-emitting diodes with mirror substratesfabricated by wafer bonding "].People such as Horng have disclosed a kind of wafer integration technology of utilizing to form minute surface substrate (Mirror-Substrate; MS) AlGaInP/metal/silica/silicon LED.It uses AuBe/Au to use as sticky material and engages silicon substrate and LED epitaxial layer.
Summary of the invention:
The invention provides a kind of light emitting diode construction, its structure comprises the multilayer epitaxial structure with a luminescent layer, combines with silicon substrate by the metal pickup layer.The luminescent layer of this diode can be homostyructure (Homostructure), single heterojunction structure (Single heterostructure, SH), double-heterostructure (Double heterostructure, DH) or the multiple quantum trap structure (Multi quantum wells, MQWs).
Light emitting diode construction also comprises first ohmic contact metal electrode layer (P type ohmic contact metal electrode layer just) and the second ohmic contact metal electrode layer (N type ohmic contact metal electrode layer just).The first ohmic contact metal electrode layer (P type ohmic contact metal electrode layer just) is connected with the first peg line electrode layer by passage; the first peg line electrode layer is on the first conductivity type epitaxial layer; or first peg line electrode layer on metal connecting layer; the second peg line electrode layer is on the second ohmic contact metal electrode layer (N type ohmic contact metal electrode layer just); making win peg line electrode layer and the second peg line electrode layer is to be positioned at the same side with respect to substrate; via cutting, chemical etching or ion(ic) etching and protective layer are to form connection in series-parallel crystal grain.
In addition, the present invention more provides a kind of manufacturing method for LED.At first, on the light-emitting diode epitaxial layer, form the first ohmic contact metal electrode layer, and deposit mirror protection layer thereon, as the tin indium oxide (Indium tinoxide) of conductivity type, or the mirror protection layer of non-conductor type.Certainly if when adopting the mirror protection layer shape of non-conductor type, when desire utilizes metal pickup layer or electric-conductivity heat-conductivity high substrate to do electrode, must carry out etching, to form the passage that is connected with the first ohmic contact metal electrode layer to the mirror protection layer of non-conductor type.Then, on high thermal conductive substrate, form the protective layer of non-conductor type, by a metal pickup layer; as In, Au, Al; metals such as Ag combine this light-emitting diode epitaxial layer, and light emitting diode base plate are removed to the conductivity type etch stop layer with the high thermal conductive substrate that contains non-conductor type protective layer.
Secondly, divide two parts etching, so that can communicate with the first ohmic contact metal electrode layer.First partly, is etched to the first conductivity type epitaxial layer.Second portion by the first conductivity type epitaxial layer etching, one slope metal interface channel, and is etched to the first ohmic contact metal electrode layer.Next, form the first peg line electrode layer at the first conductivity type epitaxial layer, mat slope metal interface channel allows the first peg line electrode layer and the first ohmic contact metal electrode layer (P type ohmic contact metal electrode layer just) communicate.Form the second ohmic contact metal electrode layer (N type ohmic contact metal electrode layer just) and the second peg line electrode layer at last again.Therefore, the first peg line electrode layer and the second peg line electrode layer are to be positioned at the same side with respect to high thermal conductive substrate.Then, with cutting, chemical etching or ion(ic) etching separately two crystal grain, sidewall with etched district of dielectric layers fills and adjacent crystal grain, then, form again metal connecting layer on dielectric layer with the first ohmic contact metal electrode layer (P type ohmic contact metal electrode layer just) that connects first crystal grain and the second ohmic contact metal electrode layer (N type ohmic contact metal electrode layer just) of second crystal grain, to finish the crystal grain series connection.
Advantage of the present invention can be carried out chip attach for a kind of simple LED chip attach structure is provided under lower temperature, reduce the problem that V group element volatilizees in the bonding process; The present invention connects by passage can obtain preferable photoelectric characteristic, decides under the electric current less and stable voltage is arranged identical, and preferable CURRENT DISTRIBUTION, depresses in same electrical, can obtain preferable luminous intensity; The present invention adopts a metal pickup layer, engages light-emitting diode and silicon substrate, therefore, even if light-emitting diode epi-wafer surface irregularity also can utilize adhesive linkage that it closely is bonded together; Among the present invention two nail line electrodes the same side and III-V nitrogen family (as GaN, InGaN) identical, be easy to three colors of RGB and encapsulate simultaneously, simultaneously, but connection in series-parallel is used; The present invention via cutting, chemical etching or ion(ic) etching each intercrystalline metal separately fills etched district with protective layer, is connected to form series connection with metal again, in parallel or and the crystal grain of connecting.
Description of drawings:
The present invention is further detailed explanation below in conjunction with the drawings and specific embodiments:
Fig. 1 to Fig. 5 is the manufacturing process schematic diagram of the light-emitting diode of a preferred embodiment of the present invention;
Fig. 6 is traditional light-emitting diode structure schematic diagram.
Figure number is to as directed:
2: substrate ohmic contact electrode layer
3: substrate
4: following coating layer
5: active layer
6: go up coating layer
7: high energy gap electric current dispersion layer
8: brilliant ohmic contact metal electrode layer of heap of stone
9: peg line electrode layer
10: high thermal conductive substrate
12: non-conductor type protective layer
14: the metal pickup layer
16:P type ohmic contact epitaxial layer
Coating layer on the 18:P type AlGaInP
20: the AlGaInP active layer
Coating layer under the 22:N type AlGaInP
24: etch stop layer
26:N p type gallium arensidep substrate
28:P type ohmic contact metal electrode layer
30: mirror protection layer
30A: the electric connection passage of insulated type mirror protection layer
31: interface channel
32:N type ohmic contact metal electrode layer
34: peg line electrode layer
36: dielectric layer
38: connect metal level
Embodiment:
The present invention has disclosed a kind of light emitting diode construction and manufacture method thereof.
Shown in Figure 1A, the epitaxial structure of light-emitting diode of the present invention comprises N p type gallium arensidep (GaAs) substrate 26, etch stop layer (Etching Stop Layer) 24, following coating (Cladding) layer 22 of N type AlGaInP (AlxGa1-x) 0.5In0.5P and active layer (Active Layer) 20, the last coating layer 18 of P type AlGaInP (AlxGa1-x) 0.5 In0.5P and P type ohmic contact epitaxial layer (Ohmic ContactEpitaxial Layer) (the ohmic contact epitaxial layer) 16 of AlGaInP (AlxGa1-x) 0.5In0.5P that stacks in regular turn.Then, on P type ohmic contact epitaxial layer 16, form P type ohmic contact metal electrode layer (the first ohmic contact metal electrode layer) 28 with conventional art.Subsequently; deposit mirror protection layer 30 thereon again, above-mentioned mirror protection layer 30 materials are to be selected from a kind of among tin indium oxide (Indium tin oxide), indium oxide (Indiumoxide), tin oxide (Tin oxide), zinc oxide (Zinc oxide), magnesium oxide (Magnesium oxide), aluminium oxide (Al2O3), silicon dioxide (SiO2) or the silicon nitride (SiNx).Because aluminium oxide (Al2O3), silicon dioxide (SiO2) or silicon nitride (SiNx) are insulating barrier.And among the present invention except using the first ohmic contact metal electrode layer (P type ohmic contact metal electrode layer just) 28 as the electrode; can also be with follow-up metallic reflector as electrode; therefore; in the case; just need form interface channel 30A to mirror protection layer 30 with little shadow and etching technique; interface channel 30A can provide the injection of metal pickup layer 14 and form electric connection with the first ohmic contact metal electrode layer (P type ohmic contact metal electrode layer just) 28, and its result is with reference to Figure 1B.The material of P type ohmic contact epitaxial layer 16 can be aluminum gallium arsenide, AlGaInP or gallium arsenide phosphide, as long as its energy gap is greater than active layer 20, can not absorb the light that active layer produces, and has high carrier concentration, be beneficial to form ohmic contact, just can select candidate as P type ohmic contact epitaxial layer 16.Above-mentioned active layer 20, the scope of its aluminium content is in x=0 ~ 0.45, and its aluminium content of upper and lower coating layer is controlled at x=0.5 ~ 1.0 approximately, when the aluminium content x=0 of active layer 20, the composition of active layer is Ga0.5In0.5P, and the wavelength X d of light-emitting diode is at 635nm approximately.
The ratio of above-claimed cpd, for example active layer (AlxGa1-x) 0.5In0.5P only is to enumerate a preferred example, is not that the present invention is equally applicable to other ratio in order to restriction the present invention.In addition in the present invention, the structure of AlGaInP active layer 20 can be to adopt traditional homostyructure (Homostructure), single heterojunction structure (SingleHeterostructure), double-heterostructure (Double Heterostructure; DH) or multiple quantum trap (MultipleQuantum Well; MQW).So-called double-heterostructure (DH) promptly comprises coating layer 22 and AlGaInP (AlxGa1-x) 0.5In0.5P active layer 20, the last coating layer 18 of P type AlGaInP (AlxGa1-x) 0.5In0.5P under N type AlGaInP (AlxGa1-x) 0.5In0.5P shown in 1A figure and the 1B figure, and wherein this preferred thickness of three layers is about 0.5 ~ 3.0,0.5 ~ 2.0,0.5 ~ 3.0 μ m respectively.
In the present invention, the material of etch stop layer 24 can be the compound semiconductor of any III-V family element,, its lattice constant produces difference row as long as can being complementary with GaAs substrate 26, and etch-rate is the substrate of being formed far below by the GaAs material 26, just can be used as etch stop layer 24.
The preferable material of etch stop layer 24 can be InGaP (InGaP) or aluminum gallium arsenide (AlGaAs) in the present invention.In the present embodiment under the N type AlGaInP etch-rate of coating layer 22 also far below GaAs substrate 26.Therefore, as long as its thickness is thicker, also can not need the different epitaxial layer of another layer composition to be used as etch stop layer.
Structure as shown in Figure 2, this structure comprises metal pickup layer 14, employed material can be In, Au, Al, metals such as Ag.And substrate 10 can adopt high thermal conductance substrate such as silicon (Si) wafer; carborundum (SiC) wafer, gallium phosphide (GaP) wafer or Au; Al; Cu metal etc.; non-conductor type protective layer 12 can be aluminium oxide (Al2O3), silicon dioxide (SiO2), silicon nitride dielectric materials such as (SiNx) or spin-on glasses (SOG), silicones (Silicone), BCB (B-stagedbisbenzo cyclo-butene), epoxy resin (Epoxy), Polyimide protective layers such as (Polyimide).
Then; with Figure 1A and Figure 1B has formed the LED wafer of P type ohmic contact metal electrode layer 28 and mirror protection layer 30 and non-conductor type protective layer 12 and the high thermal conductive substrate 10 of Fig. 2 sticks together by metal pickup layer 14, the process of adhesion is to finish the high-temperature pressurizing heating a period of time about 200 ℃ ~ 600 ℃.Allow metal pickup layer 14 that light-emitting diode chip shown in Figure 1A and high thermal conductive substrate 10 are bonded together closely.
The wafer of heap of stone that adhesion is good then with corrosive liquid (as 5H3PO4:3H2O2:3H2O or 1NH4OH:35H2O2) corrosion, is removed lighttight N p type gallium arensidep substrate 26.If etch stop layer 24 adopts InGaP or AlGaAs still can absorb the light that active layer 20 produces.Therefore, also must remove fully with corrosive liquid.Then, little in two stages shadow technology and dry-etching method, for example RIE carries out etching.
Shown in Fig. 3 A and Fig. 3 B, at first, utilization is with coating layer 18 on coating layer 22, AlGaInP active layer 20, the P type AlGaInP under the N type AlGaInP, and part P type ohmic contact epitaxial layer 16 from top to bottom etchings in regular turn, to expose the etching platform of ohmic contact epitaxial layer 16.Then, carry out the second stage etching with little shadow and etching technique again, etching ohmic contact epitaxial layer 16 is to expose the interface channel of P type ohmic contact metal electrode layer 28.
Then, form photoresistance pattern (not shown) on coating layer 22 under the N type AlGaInP with definition N type ohmic contact metal electrode layer (the second ohmic contact metal electrode layer) 32.Please note that the photoresistance pattern only has opening with definition N type ohmic contact metal electrode layer 32 positions on coating layer 22 under the N type AlGaInP.Remainder is all covered by the photoresistance pattern.Form N type ohmic contact metal electrode layer 32 subsequently again.At last, remove the metal level be formed on the photoresistance and photoresistance again with definition N type Ohm contact electrode 32.
Subsequently, for another example with the method that forms N type Ohm contact electrode 32, with the position (comprising the opening of exposed N type Ohm contact electrode 32 and the opening of exposed interface channel 31) of two peg line electrodes of photoresistance pattern definition layer 34.Photoresistance pattern openings at P type ohmic contact epitaxial layer 16 can be a bit larger tham interface channel 31.Be formed on the photoresistance with the nail line metal level that is selected from aluminium or gold more subsequently, and the opening that fills up the photoresistance pattern is removed nail line metal level and photoresistance pattern on the photoresistance at last again to connect P type ohmic contact metal electrode layer 28 and to be formed on the N type Ohm contact electrode 32.Therefore shown in Fig. 3 A and Fig. 3 B, two peg line electrode layers 34 have been formed, all at the light emitting diode construction of the same side with respect to high thermal conductive substrate.
Then; with cutting; chemical etching or ion(ic) etching are each intercrystalline metal separately; again with dielectric layer 36; aluminium oxide (Al2O3) for example; silicon dioxide (SiO2); silicon nitride dielectric material or spin-on glasses (SOG) such as (SiNx); silicones (Silicone); BCB (B-staged bisbenzo cyclo-butene); epoxy resin (Epoxy); Polyimide protective layers such as (Polyimide); fill etched district; the second ohmic contact metal electrode layer (N type ohmic contact metal electrode layer just) 32 that connects the first ohmic contact metal electrode layer (P type ohmic contact metal electrode layer just), 28 and second crystal grain of first crystal grain again with metal level 38; form series connection crystal grain, shown in Fig. 5 A.Fig. 5 B is depicted as a series connection crystal grain circuit diagram.Except that series connection, also can be in parallel, or multiple combination such as connection in series-parallel.
Because the structure of foregoing invention is by metal pickup layer 14 non-conductor type protective layer 12 and high thermal conductive substrate 10 to be sticked together with the light-emitting diode epi-wafer that comprises mirror protection layer 30.Therefore, the present invention also can do following variation, shown in Fig. 4 A, as the 1st stage etching method as described in first embodiment, by coating layer 22 etching in regular turn down, stops at metal pickup layer 14.Then; form nail line metal level 34 and dielectric layer 36 with the described method of first embodiment for another example; end product is shown in Fig. 4 A (mirror protection layer 30 is conductivity types) or Fig. 4 B (mirror protection layer 30 is non-conductivity types); two peg line electrode layers 34 have been formed with respect to high thermal conductive substrate, all at the light emitting diode construction of the same side.
Then; as previously mentioned with cutting; chemical etching or ion(ic) etching are adjacent each intercrystalline metal separately; form the sidewall that a dielectric layer 36 is filled etched district and protected adjacent crystal grain again; at last again with lift off (peeling off) technology; form to connect metal level 38 with the first ohmic contact metal electrode layer that connects first crystal grain and the second ohmic contact metal electrode layer of second crystal grain, to constitute series connection crystal grain, the circuit shown in Fig. 5 B.
The present invention is not limited to only be applicable to high brightness AlGaInP light-emitting diode, and the present invention also goes for other light LED material, as aluminum gallium arsenide redness and infrared light-emitting diode.
Claims (10)
1, a kind of light-emitting diode is characterized in that: comprise two multilayer AlGaInP stacked crystal layer structures and isolated with a dielectric layer, and constitute first crystal grain and second crystal grain; One metal level is formed on the dielectric layer and with each opposite electrical electrode of described two multilayer AlGaInP stacked crystal layer structures and connects, to constitute cascaded structure; Described each stacked crystal layer structure comprises: coating layer on, an active layer and coating layer once; One ohmic contact epitaxial layer is formed at described going up on the coating layer; One first ohmic contact metal electrode layer is formed on the ohmic contact epitaxial layer; One mirror protection layer is formed on this ohmic contact epitaxial layer, and coats this first ohmic contact metal electrode layer; One metal pickup layer; One high thermal conductive substrate; One non-conductor type protective layer is formed on the high thermal conductive substrate, and is bonded on the mirror protection layer with the metal pickup layer; One second ohmic contact metal electrode layer is formed on this time coating layer; Each multilayer AlGaInP comprises a connection channel in wherein, in order to electrically connect this first ohmic contact metal electrode layer; One peg line electrode layer is formed on the first exposed ohmic contact metal electrode layer and reaches on this second ohmic contact metal electrode layer.
2, a kind of light-emitting diode as claimed in claim 1 is characterized in that: described mirror protection layer is a kind of among aluminium oxide, silicon dioxide or the silicon nitride of the tin indium oxide, indium oxide, tin oxide, zinc oxide, magnesium oxide or the non-conductor type that are selected from the conductor type.
3, a kind of light-emitting diode as claimed in claim 1; it is characterized in that: described mirror protection layer is when being selected from the mirror protection layer of non-conductor type; more comprise at least one interface channel, connect the first ohmic contact metal electrode layer via this interface channel in order to the metal pickup layer to be provided.
4, a kind of light-emitting diode as claimed in claim 1 is characterized in that: described high thermal conductive substrate is to be selected from wherein a kind of and combination such as metals such as Au, Al, Cu, silicon, gallium phosphide or carborundum.
5, a kind of light-emitting diode as claimed in claim 1; it is characterized in that: described non-conductor type protective layer is to be selected from aluminium oxide, silicon dioxide, silicon nitride, spin-on glasses, silicones, BCB (B-staged bisbenzo cyclo-butene), epoxy resin, and one of them of the group that forms of Polyimide and mixing thereof.
6, a kind of manufacturing method for LED is characterized in that: comprising provides a temporary substrate; Form an etch stop layer, a multilayer AlGaInP stacked crystal layer structure in regular turn on described temporary substrate, described stacked crystal layer structure comprises coating layer, an active layer, coating layer on; Forming an ohmic contact epitaxial layer goes up on the coating layer in described; Form one first ohmic contact metal electrode layer on this ohmic contact epitaxial layer; Form a mirror protection layer in described ohmic contact epitaxial layer and coat the described first ohmic contact metal electrode layer; A high thermal conductive substrate is provided; Form a non-conductor type protective layer on high thermal conductive substrate; Provide a metal pickup layer, in order to bonding this non-conductor type protective layer and mirror protection layer; Remove described temporary substrate and described etch stop layer; With this structure after bonding of little shadow and etching technique etching, originate in this time coating layer and end at described metal pickup layer forming two first passages, these two first passages are at a distance of with a LED crystal particle distance; Form one second ohmic contact metal electrode layer on this time coating layer; Form a peg line electrode layer in described ohmic contact metal electrode layer and described metal pickup layer, to form four electrodes that four peg line electrode layers connect this light-emitting diode respectively; Form an isolation trenches, this isolation trenches is positioned at the edge of described each first passage, in order to this light-emitting diode is divided into two; Form dielectric layer to fill up this isolation trenches and to be formed on the sidewall of the other first passage of isolation trenches; And form a metal level on dielectric layer, in order to the peg line electrode layer on first electrode to the second electrode that connects described isolation trenches both sides respectively.
7, a kind of manufacturing method for LED as claimed in claim 6 is characterized in that: described mirror protection layer is tin indium oxide, indium oxide, tin oxide, zinc oxide, the magnesium oxide that is selected from the conductor type.
8, a kind of manufacturing method for LED as claimed in claim 6; it is characterized in that: described mirror protection layer is a kind of among aluminium oxide, silicon dioxide or the silicon nitride that is selected from the non-conductor type; at this moment; more comprise and form an interface channel at least among described mirror protection layer, connect the described first ohmic contact metal electrode layer via this interface channel in order to described metal pickup layer to be provided.
9, a kind of manufacturing method for LED as claimed in claim 6, it is characterized in that: described high thermal conductive substrate is to be selected among metal, silicon, gallium phosphide or the carborundum such as Au, Al, Cu a kind ofly, and the material of metal pickup layer then is selected from and comprises In, Au, a kind of metal wherein such as Ag, Al etc.
10, a kind of manufacturing method for LED as claimed in claim 6, it is characterized in that: described clear adhesive engages the step on described high thermal conductive substrate and described light-emitting diode epitaxial layer surface, is to pressurize and heat to form in 200 ℃ ~ 600 ℃ scopes.
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