CN102270652A - LED (light-emitting diode) module with cross-over electrode and manufacturing method thereof - Google Patents
LED (light-emitting diode) module with cross-over electrode and manufacturing method thereof Download PDFInfo
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Abstract
The invention provides an LED (light-emitting diode) module with a cross-over electrode and a manufacturing method thereof. The LED module comprises a substrate, two LEDs, an insulating layer and the cross-over electrode, wherein the two LEDs are spaced apart on the substrate and the opposite surfaces of the two LEDs are stepped surfaces; the insulating layer is covered on the stepped surfaces, thus the insulating layer is also in a stepped thin film state; and the cross-over electrode is covered on the surface of the insulating layer and two sides of the cross-over electrode are respectively connected with the n electrode of one LED and the p electrode of the other LED. In the LED module, by designing the stepped surfaces, the thinner insulating layer covers the cross-over electrode, thus increasing the emergent light proportion of the LEDs in a side direction and the overall light-emitting efficiency.
Description
Technical field
The present invention relates to a kind of light emitting diode module and manufacture method thereof, particularly a kind of light emitting diode module and manufacture method thereof with cross-over electrode.
Background technology
Existing light-emitting diode (LED) module comprises the light-emitting diode that a plurality of arrays are arranged, and utilizes cross-over electrode to connect the electrode of adjacent light-emitting diode, makes each light-emitting diode can form electrical connection.Because the design of the bridge circuit between adjacent light-emitting diode is all identical, thus following explain at wherein two light-emitting diodes in the module.
As shown in Figure 1, two light-emitting diodes 12 on light emitting diode module 1 substrate 11 all comprise: a luminous body 121 and a p electrode 122 and a n electrode 123 of being positioned at the surface of this luminous body 121.The side in opposite directions 124 of described two light-emitting diodes 12 defines a channel 120 jointly with an end face 111 of this substrate 11, fill up an insulating barrier 13 in this channel 120, cross-over electrode 14 of the surperficial coating of this insulating barrier 13, this cross-over electrode 14 is electrically connected two light-emitting diodes 12 in order to be electrically connected wherein the n electrode 123 of a light-emitting diode 12 and the p electrode 122 of another light-emitting diode 12.
This insulating barrier 13 is to utilize SOG (spin on glass) processing procedure to form, and mainly is (to be generally SiO with containing dielectric material
2) liquid solvent be filled in this channel 120 in rotary coating (spin coating) mode, make solvent evaporates through Overheating Treatment again, make in this channel 120 the only remaining SiO that solidifies
2The insulating barrier 13 that dielectric material is made.
The reason that this insulating barrier 13 will fill up this channel 120 is as follows: because the side 124 of described light-emitting diode 12 is for extending up and down, the top and bottom of side 124 forms bigger difference in height, to extend up and down and surface that extended distance is long coating rete and being not easy equably at one, so if this insulating barrier 13 ' is made into as shown in Figure 2 film like, this insulating barrier 13 ' is positioned at position on the described side 124 with inhomogeneous, and the upright position of this cross-over electrode 14 ' also is difficult to evenly be coated on this insulating barrier 13 ', when causing light-emitting diode 12 to operate in little electric current, cross-over electrode 14 ' may just can't bear and rupture.
In the case, insulating barrier 13 just must fill up this channel 120 as shown in Figure 1, makes the height fall at each position of this cross-over electrode 14 less, coating more equably.And these insulating barrier 13 thickness that fill up channel 120 are about several microns (μ m), the SiO of this thickness
2The penetrance of the light of insulating barrier 13 about for wavelength 455 nanometers (nm) is about 25% to 45%, the side direction light extraction efficiency of light-emitting diode 12 is reduced, and then reduce the whole lighting efficiency of light-emitting diode 12.
In addition, this insulating barrier 13 must utilize the moulding of rotary coating mode and can not adopt sputter, evaporation equal vacuum plated film mode, because the speed of vacuum coating is slower, if plate the rete of several micron thickness, will expend the too much time.Though the film forming speed of rotary coating is very fast, but shortcoming is a thickness can't do accurate control, follow-up also the needs by cmp (Chemical Mechanical Polishing, be called for short CMP) insulating barrier 13 excessive outstanding positions are polished, and the CMP equipment manufacturing cost is high, therefore produces the high disappearance of equipment cost.
Summary of the invention
The object of the present invention is to provide a kind of luminous efficiency that promotes, and reduce the light emitting diode module with cross-over electrode and the manufacture method thereof of equipment cost.
The present invention has the light emitting diode module of cross-over electrode, comprise: a substrate, be positioned at one first light-emitting diode and one second light-emitting diode on this substrate at each interval, an insulating barrier and a cross-over electrode, this first light-emitting diode and this second light-emitting diode all comprise a luminous body, a n electrode and a p electrode, one first block and one second block of being connected about described luminous body comprises, and second block of contiguous this second light-emitting diode of first block of this first light-emitting diode, described first block all comprises a n side end face, and described second block all comprises a p side end face.
First block of this first light-emitting diode also comprises first cascaded surface that is extended towards this substrate by an end of this n side end face, this first cascaded surface has two from top to bottom gradually towards first inclined plane part of the oblique extension of direction of this second light-emitting diode, and one be connected first between described first inclined plane part and connect facial, second block of this second light-emitting diode also comprises second cascaded surface that is extended towards this substrate by an end of this p side end face, this second cascaded surface has at least two from top to bottom gradually towards second inclined plane part of the oblique extension of direction of this first light-emitting diode, and at least one is connected second between described second inclined plane part and connects facially, and described n electrode and described p electrode are separately positioned on described n side end face and the described p side end face.
This insulating barrier is along the step-like surface of described first cascaded surface and second cascaded surface and coating, and the both sides of this insulating barrier contact the n electrode of this first light-emitting diode and the p electrode of this second light-emitting diode respectively, this cross-over electrode is coated on the surface of this insulating barrier, and the both sides of this cross-over electrode connect the n electrode of this first light-emitting diode and the p electrode of second light-emitting diode respectively.
Light emitting diode module with cross-over electrode of the present invention, the angle between described first inclined plane part and horizontal plane is θ 1, and 15 degree≤θ, 1≤58 degree, the angle between described second inclined plane part and horizontal plane is θ 2, and 15 degree≤θ, 2≤58 degree.
Light emitting diode module with cross-over electrode of the present invention, the height of described p side end face is greater than the height of described n side end face, the quantity of described second inclined plane part is three, and described second connects facial quantity is two and is connected between the second adjacent inclined plane part.
Manufacture method with light emitting diode module of cross-over electrode of the present invention comprises: step 1: make an initial body on this substrate; Step 2: this initial body is made etch processes, make this initial body form the connection block that top side location is lower, and two left and right sides and top side location block with higher that are connected to this connection block, these two end face block with higher become second block of this first light-emitting diode and first block of this second light-emitting diode respectively; This manufacture method with light emitting diode module of cross-over electrode also comprises:
Step 3: the part etching at the top of connection block that will this initial body removes, and forming one of them first inclined plane part of this first light-emitting diode, and one of them second inclined plane part of this second light-emitting diode and this second connects facial;
Step 4: the part etching that will connect block once again removes, the local surfaces of this substrate is exposed, this initial body so form described two between left and right every luminous body, and first inclined plane part that is positioned at the below that forms this first light-emitting diode first is connected face with this, and second inclined plane part below being positioned at of this second light-emitting diode;
Step 5: utilize the vacuum coating mode to deposit this insulating barrier; And
Step 6: the n electrode, p electrode and this cross-over electrode that form this first light-emitting diode and second light-emitting diode.
Manufacture method with light emitting diode module of cross-over electrode of the present invention, angle between described first inclined plane part and horizontal plane is θ 1, and 15 degree≤θ, 1≤58 degree, the angle between described second inclined plane part and horizontal plane is θ 2, and 15 degree≤θ, 2≤58 degree.
Manufacture method with light emitting diode module of cross-over electrode of the present invention, step 5 are the insulating barriers that utilizes plasma-assisted chemical vapour deposition mode deposition of silica to make.
Beneficial effect of the present invention is: by this first cascaded surface and this second cascaded surface, make this substrate to being stepped progressive rising design between the end face of this first light-emitting diode and this second light-emitting diode, this insulating barrier and this cross-over electrode also all are stepped design, to promote the coating uniformity of cross-over electrode.And this thickness of insulating layer as thin as a wafer, and minimizing is blocked for lateral light, promotes the bright dipping ratio of lateral light, and then promote the luminous efficiency of light emitting diode module integral body.Also because this thickness of insulating layer is thin, it is just passable to utilize vacuum coating mode (sharp as evaporation, sputter) to form, and can not cause the long plated film time.The benefit of vacuum coating is precisely to control thickness, after this insulating barrier coating is finished, does not need to polish by cmp (CMP) in addition, can avoid using expensive device, and then reduces equipment cost.
Description of drawings
Fig. 1 is a kind of schematic diagram of existing light emitting diode module;
Fig. 2 is the schematic diagram of another kind of light emitting diode module;
Fig. 3 is the schematic diagram of a preferred embodiment of the light emitting diode module of the present invention with cross-over electrode;
Fig. 4 is the flow chart of steps of a preferred embodiment of the manufacture method of the light emitting diode module of the present invention with cross-over electrode;
Fig. 5 is the schematic flow sheet of each step of this manufacture method when carrying out.
Embodiment
The present invention is described in detail below in conjunction with drawings and Examples, is noted that in the following description content, and similar elements is to represent with identical numbering.
Consult Fig. 3, the present invention has the preferred embodiment of the light emitting diode module of cross-over electrode, be applicable to the LED module of dc powered, also be applicable to exchange electrically driven (operated) LED module, and comprise: substrate 2, be positioned at one first light-emitting diode 3 and one second light-emitting diode 4, an insulating barrier 5 and a cross-over electrode 6 on this substrate 2 every ground between left and right each other.
The substrate 2 of present embodiment is sapphire (Al
2O
3) substrate 2, but be not limited thereto.The structure of described first light-emitting diode 3 and described second light-emitting diode 4 is all identical, and all comprise a luminous body 31, a n electrode 32 and a p electrode 33, described luminous body 31 comprises multilayer stacked epitaxial loayer up and down, described epitaxial loayer is meant layer bodies such as p type semiconductor layer that general LED structure has, n type semiconductor layer, luminescent layer, because improvement of the present invention does not lie in the variation of epitaxial loayer, no longer illustrates at this.One first block 34 and one second block 35 of being connected about the luminous body 31 of described first light-emitting diode 3 and described second light-emitting diode 4 all comprises, and second block 35 of first block, 34 contiguous these second light-emitting diodes 4 of first light-emitting diode 3.The top of described first block 34 is that n N-type semiconductor N material is made, and comprise a n side end face 341, the top of this second block 35 is that p N-type semiconductor N material is made, and has a p side end face 351, and the height of this p side end face 351 is greater than the height of this n side end face 341.
Wherein, first block 34 of this first light-emitting diode 3 comprises that also one is extended and towards first cascaded surface 342 of this second light-emitting diode 4 towards this substrate 2 by an end of this n side end face 341, this first cascaded surface 342 has first inclined plane part 343 of two upper and lower settings and first connection facial 344 that a level is connected 343 of described first inclined plane parts, described first inclined plane part 343 all is from top to bottom gradually towards the oblique extension of the direction of this second light-emitting diode 4, preferably, angle between first inclined plane part 343 and horizontal plane (refers to the acute angle angle, hereinafter referred to as the slope angle) be θ 1, and 15 degree≤θ, 1≤58 degree.
The n electrode 32 and the p electrode 33 of described first light-emitting diode 3 and described second light-emitting diode 4 all are to be made by conductive metal material, and be separately positioned on n side end face 341 and the p side end face 351, n electrode 32 is respectively applied for p electrode 33 and is electrically connected n type semiconductor layer and p type semiconductor layer, n electrode 32 must not limit with the material of p electrode 33, as long as can inject this luminous body 31 and flow to this n electrode 32 just passable to form current circuit by this p electrode 33 for foreign current.
The material of this insulating barrier 5 is silicon dioxide (SiO
2), and be positioned on described first cascaded surface 342 and described second cascaded surface 41, and then be connected across 4 of first light-emitting diode 3 and second light-emitting diodes with stepped kenel, the left and right sides of insulating barrier 5 lays respectively on the p side end face 351 of the n side end face 341 of this first light-emitting diode 3 and second light-emitting diode 4, and contact the n electrode 32 of first light-emitting diode 3 and the p electrode 33 of second light-emitting diode 4 respectively, insulating barrier 5 is used for 33 exposed surfaces of p electrode of the n electrode 32 of this first light-emitting diode 3 and second light-emitting diode 4 are covered fully, and the thickness of the insulating barrier 5 of present embodiment is about 4000 dusts
And its thickness range can be 4000 dusts ± 300 dusts, but along with the operating voltage difference of LED, the thickness of this insulating barrier 5 can be done suitable change in design.
This cross-over electrode 6 is along the step-like surface of this insulating barrier 5 and coating is connected across 4 of first light-emitting diode 3 and second light-emitting diodes, and the left and right sides of cross-over electrode 6 connects the n electrode 32 of this first light-emitting diode 3 respectively and the p electrode 33 of second light-emitting diode 4 is electrically connected to form.
Consult Fig. 3, Fig. 4, Fig. 5, the present invention has the manufacture method of the light emitting diode module of cross-over electrode, comprising:
(1) carry out step 71: provide this substrate 2, and by epitaxial manufacture process on this substrate 2 coating multilayer stacked on top the layer body, described layer body includes p type semiconductor layer, n type semiconductor layer and luminescent layer, initial body 81 of the common formation of described layer body, this moment, the end face of this initial body 81 was a horizontal plane.
(2) carry out step 72: this initial body 81 is made local etch processes, make this initial body 81 form the connection block 811 that top side location is lower, and two left and right sides and top side location block with higher that are connected to this connection block 811, these two top side location block with higher become second block 35 of this first light-emitting diode 3 and second block 35 of this second light-emitting diode 4 respectively.
(3) carry out step 73: this step is primary cascaded surface etch processes, the part etching at the top of this connection block 811 is removed, forming one of them first inclined plane part 343 of this first light-emitting diode 3, and wherein two second inclined plane parts 411 of this second light-emitting diode 4 and one of them second connects facial 412.
(4) carry out step 74: this step is secondary cascaded surface etch processes, the part etching of this connection block 811 is removed, the local surfaces of this substrate 2 is exposed, and therefore will this initial body 81 distinguish between left and right every luminous body 31, first inclined plane part 343 that is positioned at the below of described first light-emitting diode 3 with this first is connected facial 344, and second light-emitting diode 4 be positioned at that second inclined plane part 411 and another second connection face 412 of below also form simultaneously in this step.
In other words, by above-mentioned twice cascaded surface etch processes, be used to form between left and right every luminous body 31, and mold described first cascaded surface 342 and second cascaded surface 41.Cascaded surface etch processes of the present invention all is to utilize the etching mode of suitable light shield design collocation inductive couple plasma (Inductively Coupled Plasma is called for short ICP) to carry out.
(5) carry out step 75: utilize plasma-assisted chemical vapour deposition (Plasma-Enhanced CVD is called for short PECVD) mode to deposit this SiO
2Insulating barrier 5 makes SiO
2Be coated on the part of the n side end face 341 of described first cascaded surface 342, second cascaded surface 41, first light-emitting diode 3, and the part of the p side end face 351 of second light-emitting diode 4.Utilize the CVD mode to deposit this insulating barrier 5, can reach the thickness of required insulating barrier 5 the plated film time by control, quite convenient for the control of thickness.
(6) carry out step 76: utilize suitable light shield design, can be once n electrode 32, p electrode 33 and this cross-over electrode 6 of coating first light-emitting diode 3 and second light-emitting diode 4 simultaneously, make this cross-over electrode 6 along the step-like surface of this insulating barrier 5 and coating.It is noted that, though being the connection with the cross-over electrode 6 between two light-emitting diodes, present embodiment is designed to example, but in fact, general module includes a plurality of adjacent light-emitting diodes all around, electrode cross-over connection design between adjacent in twos light-emitting diode can utilize structure of the present invention and mode to reach.
The present invention is by first cascaded surface 342 and second cascaded surface 41, make this substrate 2 to being stepped progressive rising design between the end face of described first light-emitting diode 3, second light-emitting diode 4, as long as this insulating barrier 5 is just passable along described stepped surfaces coating straticulation, make this cross-over electrode 6 can be along the stepped surfaces of insulating barrier 5 and coating, be to relax and form difference in height gradually between the bottommost of this cross-over electrode 6 and top, can promote the coating uniformity of cross-over electrode 6 on the inclined-plane.
And the thickness of this insulating barrier 5 is below 1 micron (μ m), the film grade that is about hundreds of nanometer (nm), minimizing is blocked lateral light, penetrance for the light of wavelength 455nm can be up to 88%, can promote the bright dipping ratio of lateral light, and then promote the luminous efficiency of light emitting diode module integral body.Also because these insulating barrier 5 thin thickness, utilize vacuum coating mode (sharp) to form just passable as evaporation, sputter, can not cause the long plated film time, the benefit of vacuum coating mode is precisely to control thickness, after these insulating barrier 5 coatings are finished, do not need to polish by cmp (CMP) in addition, can avoid using expensive device, and then reduce equipment cost.
Confirm the lifting of luminous efficiency of the present invention by a comparative example at this, described comparative example and specification of the present invention are roughly the same, all be formed with 7 * 7 led array (7 rows and 7 row, 49 light-emitting diodes are altogether just arranged), single LEDs chip area is 4.1mm
2, and the area of whole light emitting diode module is 30.08mm
2, but the design of the cross-over electrode 6 of comparative example is the structure that adopts Fig. 1.In 155 volts of operating voltages (V), under the operating condition of electric current 17 milliamperes (mA), optical output power of the present invention is 247 milliwatts (mW), and the optical output power of comparative example has only 216mW, the present invention has promoted [(247-216)/216] * 100%=14.35% with respect to the optical output power of this comparative example.
In addition, consult Fig. 3 and table 1, can obtain the optimum range of the slope angle of the present invention's first inclined plane part 343 and second inclined plane part 411 by the experimental result of table 1, first inclined plane part 343 of present embodiment is identical with the slope angle of second inclined plane part 411, but is not limited to when implementing identical.The structure of four experimental examples of the present invention in the table 1 and three comparative examples is roughly the same, and different places is the width of slope angle and cross-over electrode 6.In this explanation earlier, under identical vacuum coating condition and adopt the shade of identical live width to come coating cross-over electrode 6, width at the cross-over electrode 6 of a smooth surface and coating on an inclined-plane can be not identical, because the gradient on inclined-plane can be influential for the adhesive force of Coating Materials.Four experimental examples of the present invention and three comparative examples all adopt the shade of 6 μ m live widths, make that the cross-over electrode 6 that forms by this shade can be not wide, can reduce the ratio that LED forward lighting area is blocked.
As seen from Table 1, the slope angle is less than or equal to the sample (experimental example 1 to 3) at 40 degree angles, because the influence that its surface slope causes is also little, so the cross-over electrode 6 that forms all approximates 6 μ m; And the slope angle is greater than the sample at 40 degree angles, along with the slope angle is bigger, represent the inclined-plane steeper, the width of the cross-over electrode 6 that can form is littler, also therefore the breakdown current of cross-over electrode 6 is diminished, described breakdown current is meant the current value in the time of can making cross-over electrode 6 fractures.
With electrical power 5W, voltage 110V is an example, maximum current flow is about 45mA, because 5W/110V=45.45mA, that is to say, be applied to the light-emitting diode of 5W, the breakdown current of its cross-over electrode 6 should just enough use greater than 45mA, and the electric current that experimental example 1 to 4 of the present invention can bear more than the 55mA meets demand.Comparative example 1 to 3 causes the width of the cross-over electrode 6 that can form too little because bevel angle is too big, the electric current that can bear also descends, and is respectively 36mA, 18mA, 12mA, all can't reach the above requirement of breakdown current 45mA.
So the present invention limits 15 degree≤θ, 1≤58 degree, 15 degree≤θ, 2≤58 degree, when reason is that the slope angle is too big, the width of cross-over electrode 6 will be too little, anti-breakdown current is big inadequately, can't use, the slope angle too hour can't be applicable to the LED structural design, because also need to consider specifications such as the spacing design between two adjacent LED.
Table 1
| Sample | Experimental example 1 | Experimental example 2 | Experimental example 3 | Experimental example 4 | Comparative example 1 | Comparative example 2 | Comparative example 3 |
| Slope angle (degree) | 15 | 23 | 40 | 53 | 63 | 75 | 84 |
| Cross-over electrode width (μ m) | 6 | 6 | 6 | 5.2 | 4.4 | 2.2 | 0.5 |
| Breakdown current (mA) | 58 | 58 | 58 | 55 | 36 | 18 | 12 |
In sum, design by first cascaded surface 342 and second cascaded surface 41, make insulating barrier 5 can be the rete of thinner thickness, promote the lateral light bright dipping ratio and the whole lighting efficiency of light-emitting diode, and the slope angle needs certain scope, make the width of cross-over electrode 6 be unlikely too small, to meet the requirement of anti-breakdown current.And the present invention gives up traditional SOG and the CMP processing procedure forms this insulating barrier 5, but before forming this insulating barrier 5, form this first cascaded surface 342 and second cascaded surface 41 by twice etching, it is just passable to make 5 needs of insulating barrier of the present invention form film like by the vacuum coating mode, and sizable progress is arranged on the processing procedure.
Claims (6)
1. light emitting diode module with cross-over electrode, comprise: a substrate, be positioned at one first light-emitting diode and one second light-emitting diode on this substrate at each interval, an insulating barrier and a cross-over electrode, this first light-emitting diode and this second light-emitting diode all comprise a luminous body, a n electrode and a p electrode, one first block and one second block of being connected about described luminous body comprises, and first block of this first light-emitting diode is adjacent to second block of this second light-emitting diode, described first block all comprises a n side end face, described second block all comprises a p side end face, it is characterized in that
First block of this first light-emitting diode also comprises first cascaded surface that is extended towards this substrate by an end of this n side end face, this first cascaded surface has two from top to bottom gradually towards first inclined plane part of the oblique extension of direction of this second light-emitting diode, and one be connected first between described first inclined plane part and connect facial, second block of this second light-emitting diode also comprises second cascaded surface that is extended towards this substrate by an end of this p side end face, this second cascaded surface has at least two from top to bottom gradually towards second inclined plane part of the oblique extension of direction of this first light-emitting diode, and at least one is connected second between described second inclined plane part and connects facially, and described n electrode and described p electrode are separately positioned on described n side end face and the described p side end face;
This insulating barrier is along the step-like surface of this first cascaded surface and this second cascaded surface and coating, and the both sides of this insulating barrier contact the n electrode of this first light-emitting diode and the p electrode of this second light-emitting diode respectively, this cross-over electrode is coated on the surface of this insulating barrier, and the both sides of this cross-over electrode connect the n electrode of this first light-emitting diode and the p electrode of this second light-emitting diode respectively.
2. the light emitting diode module with cross-over electrode according to claim 1, it is characterized in that the angle between described first inclined plane part and horizontal plane is θ 1, and 15 degree≤θ, 1≤58 degree, angle between described second inclined plane part and horizontal plane is θ 2, and 15 degree≤θ, 2≤58 degree.
3. the light emitting diode module with cross-over electrode according to claim 1, it is characterized in that, the height of described p side end face is greater than the height of described n side end face, the quantity of described second inclined plane part is three, and described second connects facial quantity is two and is connected between the second adjacent inclined plane part.
4. manufacture method with light emitting diode module of cross-over electrode as claimed in claim 1 comprises:
Step 1: on this substrate, make an initial body;
Step 2: this initial body is made etch processes, make this initial body form the connection block that top side location is lower, and two left and right sides and top side location block with higher that are connected to this connection block, described top side location block with higher becomes second block of this first light-emitting diode and first block of this second light-emitting diode respectively; It is characterized in that this manufacture method with light emitting diode module of cross-over electrode also comprises:
Step 3: the part etching at the top of connection block that will this initial body removes, and connects facial with one of them second inclined plane part of one of them first inclined plane part of forming this first light-emitting diode and this second light-emitting diode and this second;
Step 4: the part etching that will connect block once again removes, the local surfaces of this substrate is exposed, this initial body so form two between left and right every described luminous body, and first inclined plane part that is positioned at the below that forms this first light-emitting diode first is connected face with this, and second inclined plane part below being positioned at of this second light-emitting diode;
Step 5: utilize the vacuum coating mode to deposit this insulating barrier; And
Step 6: the n electrode, p electrode and this cross-over electrode that form this first light-emitting diode and this second light-emitting diode.
5. the manufacture method with light emitting diode module of cross-over electrode according to claim 4, it is characterized in that, angle between described first inclined plane part and horizontal plane is θ 1, and 15 degree≤θ, 1≤58 degree, angle between described second inclined plane part and horizontal plane is θ 2, and 15 degree≤θ, 2≤58 degree.
6. the manufacture method with light emitting diode module of cross-over electrode according to claim 4 is characterized in that, step 5 is the insulating barrier that utilizes plasma-assisted chemical vapour deposition mode deposition of silica to make.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010088929A (en) * | 2001-08-08 | 2001-09-29 | 유태경 | AlGaInN LED device and their fabrication method |
| CN1601774A (en) * | 2004-10-20 | 2005-03-30 | 国联光电科技股份有限公司 | Structure of LED and its mfg method |
| US20070090488A1 (en) * | 2005-10-24 | 2007-04-26 | Tyntek Corporation | High-efficiency matrix-type LED device |
| CN201066689Y (en) * | 2007-07-19 | 2008-05-28 | 东莞高埗佰鸿电子厂 | Improved luminescent thermoelectric effect chip |
-
2010
- 2010-06-07 CN CN 201010194668 patent/CN102270652B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20010088929A (en) * | 2001-08-08 | 2001-09-29 | 유태경 | AlGaInN LED device and their fabrication method |
| CN1601774A (en) * | 2004-10-20 | 2005-03-30 | 国联光电科技股份有限公司 | Structure of LED and its mfg method |
| US20070090488A1 (en) * | 2005-10-24 | 2007-04-26 | Tyntek Corporation | High-efficiency matrix-type LED device |
| CN201066689Y (en) * | 2007-07-19 | 2008-05-28 | 东莞高埗佰鸿电子厂 | Improved luminescent thermoelectric effect chip |
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