CN1599930A - 光存储系统、光存储介质及其使用 - Google Patents

光存储系统、光存储介质及其使用 Download PDF

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CN1599930A
CN1599930A CNA028241886A CN02824188A CN1599930A CN 1599930 A CN1599930 A CN 1599930A CN A028241886 A CNA028241886 A CN A028241886A CN 02824188 A CN02824188 A CN 02824188A CN 1599930 A CN1599930 A CN 1599930A
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R·J·A·范登奥特拉尔
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Abstract

本申请描述了包含光存储介质(1)和光学头设备(6)的光存储系统。所述介质具有基底(2)、记录叠层(3)和光透射保护涂覆叠层(4和5),所述保护涂覆叠层用于保护记录叠层不受光学头设备的碰撞。所述保护涂覆叠层至少包括以下涂层的多层(4和5):第一层(5),具有小于40nm的厚度以及低于1.5J/m2表面能量的表面;以及与第一层(5)相邻的第二层(4),具有小于10GPa而大于0.001Gpa杨氏模量E。涂层(4和5)的这种组合对于光学头设备机械碰撞所引起的损环有很强的抵抗力。而不需要润滑剂。

Description

光存储系统、光存储介质及其使用
本发明涉及一种包括光存储介质和光学头设备的光存储系统,所述介质包括一个基底,并在所述基底的至少一侧面上沉积有:
-记录叠层(recording stack),其具有至少一个使用聚焦辐射光束记录的记录层,所述聚焦辐射光束从所述光学头设备发出并具有预定波长和预定的数值孔径,
-保护涂覆叠层(coating stack),其置于记录叠层和光学头设备之间用于保护记录叠层免受光学头设备的碰撞。
本发明进一步涉及一种用于上述光存储系统的光存储介质。
本发明进一步涉及上述光存储介质的使用。
在开始段落中提及类型的光存储系统的实例可以从欧洲专利申请EP0971344 A1中获知。
光存储介质的数据容量方面的进一步增长需要在所述介质上进行更小数据标记的写入与读取,其反过来需要在光学头设备和介质(如磁盘)之间有非常小的空间。这是因为介质上数据标记尺寸的减小需要光学头设备的透镜系统具有相对高的数值孔径(NA),如>0.8。这种小的头盘(head-disk)间隔可以通过所谓的滑动触头技术或基于致动器的技术获得。在第一个技术中,如从硬磁盘驱动器中获知的滑动触头,典型地在存储介质的平坦表面上以辐射光束的几个波长λ或更小的高度飞行(flies)。光存储系统的滑动触头技术的使用意味着这样的光存储介质不再是真正非接触系统,也就是,在磁头和光记录介质之间会常常出现接触,如在开始的过程中。在硬磁盘驱动器中,使用润滑剂和记录层顶部上的硬涂层显著减少了磁头和磁盘之间的偶然接触。润滑剂薄膜被设置在硬磁盘介质上而具有多功能的目的:通过耗散部分硬磁盘碰撞能量而起到衬垫(cushion)的作用,有助于统化磁盘表面而防止污染以及最小化磨损。在上述欧洲专利申请中,起润滑剂作用的羧酸胺盐(carboxylicacid amine salt)以100nm的特定厚度被用在无机材料,如SiNx、SiOx或SiC的表面涂层的顶部。没有使用所述润滑剂,所述欧洲专利申请的介质表面在损坏测试之后示出了大而深的裂痕,在所述损坏测试中,以可控的方式故意引出光盘表面和光学头设备之间的碰撞。使用所述润滑剂,损坏被显著抵消并在所述测试之后看不到损坏或非常轻微的损坏。可是,由于光学部件的润滑剂在辐射光路中被污染,使得润滑剂的使用必定不适合光学记录。这是已知系统要求在介质表面设有润滑剂的不利方面。
因此,本发明的一个目的是提供一种在开始段落中所描述类型的光存储系统,其具有光学存储介质,所述存储介质表面能防止由于系统的光学头设备的碰撞所引起的损坏,但其表面不设有润滑剂或其他不耐用、容易被污染的涂层。
根据本发明,使用一种光存储系统获得上述目的,其特征在于,保护涂覆叠层至少包括以下涂层的多层:
-在离记录叠层最远处设置第一层,其具有小于40nm的厚度以及低于1.5J/m2表面能量的表面,
-与第一层相邻的第二层,其具有小于10GPa而大于0.001Gpa杨氏模量E。
多层保护涂覆叠层也称作顶盖(capping)叠层,其被设置在记录叠层的顶部。顶盖叠层至少具有两个涂层。第一层相对薄并因此具有低的机械应力,并与下面的第二层很好地适配。而且,第一层具有低表面能量,也就是钝化表面,以阻止光学头设备的吸附,如滑动触头的吸附,和/或对于光学介质表面的污染。所述第二层具有相对低的杨氏模量,也就是高弹性。进一步,第二层在记录涂层和光介质表面之间起到热障的作用,以便阻止辐射光束在读取和写入信息过程中所使用的光学(伺服)信号中引起热不稳定性。为了保护与磁盘接触过程中的磁头,磁盘表面可以覆盖有弹性涂层,其在碰撞过程中通过散除大部分的硬磁盘碰撞能量而起到衬垫的作用。可是,这种单一的弹性涂层很容易受到损坏。而且,弹性材料倾向于具有导致磁盘头吸附的更高表面能量。根据本发明,相对薄的第一层和弹性第二层的结合对于防止例如光学头设备的碰撞是非常耐用的,以非常小或没有损坏地来保护涂覆叠层和下面地记录叠层和/或基底。当第二层的杨氏模量比0.001GPa小时,第一层可被曝光产生过度的变形而导致第一层的损坏。因此,第一层的杨氏模量应当比0.001GPa大。
在一个优选实施例中,第一层的材料可以具有H或更硬的铅笔硬度。通过使用相对硬的层,能抵消第一层与光学头设备偶然接触过程中的表面损坏。在一个优选实施例中,第一层具有小于20nm大于10nm的厚度。相对薄的厚度产生具有低机械应力的非常适合的涂层,特别当使用硬涂层时特别有效,所述硬层具有相对大的厚度而容易破裂。因此,由于第二层能很容易地弹性变形,第一层相对的薄以限制对于该涂层在与光学头设备相碰撞过程中裂痕或其他损坏的形成。
在优选实施例中,第一层具有小于1013Ω/平方的电阻。低于这个电阻标准,所述层具有抗静电的特性并因为产生的静电荷被中和而减少灰尘微粒等的吸引力和粘附。
第二层优选地具有小于125μm的厚度。太大的厚度将很容易地引起聚焦辐射光束的光学偏差,所述偏差导致不正常的读取点或写入点。而且,辐射光束的高数值孔径(NA)的使用,在第二层过于大的厚度方面变得非常麻烦。
第二层优选具有小于1GPs的杨氏模量E。小于1GPs的杨氏模量具有优势,即该层的衬垫功能和机械能量散除能力能被进一步改善。
在具体实施例中,开第二层具有小于30μm的厚度。光学存储介质,例如,可以为磁光盘。如果第二层的厚度大于30μm,磁光记录层和读/写磁头中的磁场调制线圈之间产生的距离,要么导致记录层磁场的过度减少,或使线圈具有过高的自感应和阻抗而不能达到足够的数据速率。
在适合的实施例中,第二层包括紫外光可固化的丙烯酸树脂。可使用经常使用的并很容易实现的沉积技术——旋转涂覆技术形成这样一层。
第一层优选包括从氮化硅、二氧化硅、氧氮化硅和菱形碳(DLC)的组中选出的材料。这些材料具有良好的抗磨损特性,并与其他原子掺杂控制其表面传导率和表面能量。
优选地,第一层具有超过第二层的临界表面应力的表面应力。如果第一层的表面应力大于第二层的临界表面应力,则光存储介质的表面将变形而导致表面粗糙度的增加。太大的表面粗糙度将反过来影响来自光存储介质的光信号。可是,由于其导致在碰撞过程中,如光学头设备和介质表面之间接触面积的减少,所以轻微的表面粗糙度是有利的。因此,第一和第二层的表面应力能被调节以产生具有限定表面粗糙度的光存储介质。限定的表面粗糙度意指,来自光盘的光信号没有或仅受轻微地影响,同时在碰撞过程中能减少光学头设备和介质之间的接触面积。
根据本发明的光学存储介质的实例将参照附图1予以说明。应注意到,附图为示意性说明并没有依比例绘制。
附图1示出了光存储系统的实施例的截面图,所述光存储系统包括光盘、光学头设备和聚焦到光盘的记录叠层上的辐射光束。
在附图1中,光存储系统包括具有基底2的光存储介质1。在基底的一侧面上沉积具有至少一个记录层的记录叠层3。具有预定波长和预定数值孔径的聚焦辐射光束7从光学头设备6发出。在记录叠层3和光学头设备6之间的光透射保护涂覆叠层4和5,保护记录叠层3免于光学头设备6的碰撞。所述保护涂覆叠层4和5包括具有9nm厚度的第一层5。第一层5由材料Si3N4制成并具有小于1.5J/m2表面能量的表面。所述Si3N4的铅笔硬度比H硬。第二层4由Dainippon Ink和Chemicals Inc制造的树脂材料Daicure Clear EX-860制成。所述第二层具有大约0.05GPa的杨氏模量E。使用本领域熟知的旋转涂覆方法以及和随后的紫外线固化方法形成具有15μm厚度的涂层4。本发明并不限于这种材料。可以使用其他具有小于10GPa杨氏模量的材料,例如聚合体或填充聚合体。也可通过将透明塑料薄片,例如配有压力敏感粘附(PSA)层的聚碳酸酯(PC)或聚甲基丙烯酸甲酯(PMMA)粘附到记录叠层3形成第二层4。第一层5通过喷溅方法形成在第二层4上。Si3N4的化学计量(stoichiometry)可由于喷溅条件方面的变化而轻微地偏离常规。可通过氢化降低层5的表面能量。其他可能用作第一层5的材料为具有良好的抗磨损特性的二氧化硅、氧氮化硅和菱形碳(DLC)。可是,本发明并不限于这些材料。
第一层5的材料的表面能量应当小于1.5J/m2,优选地小于0.75J/m2,更优选地小于0.1J/m2
基底2根据伺服预凹槽(servo pregroove)或信息信号而具有凹陷图案。基底2,例如,能通过树脂,典型为聚碳酸酯(PC)的喷射模塑法,或通过紫外线可固化树脂的喷射模塑法在玻璃层上制成。记录叠层3通过基底2的表面上沉积随后的涂层形成,例如通过喷溅随后的涂层形成,在所述基底2的表面上已形成凹陷图案。所述记录叠层3可以包括所所谓的相变记录层、磁光记录层或染色层。并不排除其他类型的记录层,例如荧光层。可以使用只读(ROM)型层,例如铝等金属。相位改变材料的实例可以是金属和包含一个或多个例如元素Ge、Sb、In、Ga、Ag和Te元素的合金。磁光材料的实例可以是包含例如Te、Ge、Fe和Co的合金。本发明也能运用磁畴扩展读取(domain expansion read-out)技术而用于磁光记录系统,如磁放大(magnetic amplifying)磁光系统(MAMMOS)或畴壁位移检测(DWDD)。
如果第一层5的表面应力比第二层4的临界表面应力大,光存储介质1的表面将会变形而导致表面粗糙度的增加。当由光学头设备6读取时,大的表面粗糙度反过来影响来自光存储介质1的光信号。可是,因为其在碰撞过程中导致磁头和滑动触点之间接触面积的减少,所以轻微的表面粗糙度是有利的。因此,涂层4和5的表面应力能被调节以产生具有有限表面粗糙度的光盘。有限的表面粗糙度意指,来自光盘1的光信号没有或仅受轻微地影响,同时在碰撞过程中能减少磁头和光盘之间的接触面积。
系统优选实施例对由于光学头设备6碰撞所造成的损坏的抵抗力,通过玻璃滑动触头例如6在光学存储介质1上的碰撞已被测试。如果不存在层4和5,则光存储介质1的表面由于玻璃滑动触头的碰撞而被严重损坏。如果仅不存在层5,玻璃滑动触头6的碰撞导致对于光存储介质1的表面的可见永久损坏,以及在光存储介质1的表面上产生滑块的强大的吸附性。如果不存在层4,子光存储介质1被碰撞时,玻璃滑动触头被明显损坏。如果层4和5都存在,碰撞时,在光存储介质1或玻璃滑动触头6上,观察不到不明显的可见损坏。
应当注意到,上述实施例是说明性的而不是对本发明的限定,并且本领域技术人员在不脱离所附权利要求的范围内能够设计一些可替换的实施例。在权利要求中,在括号中放置的任何参考标记不应被认为来限定权利要求。词语“包括”、“由…构成”、并不排除不同于权利要求中所列出的部件或步骤的存在。在一个元件或部件前面的“一个”并不排除多个这样的元件或部件的存在。仅有的事实是,多个不同的从属权利要求中叙述的一些方案,并不说明不能使用这些方案的组合来使发明具有优势。
根据本发明,提供了一种包括光存储介质和光学头设备的光存储系统。所述介质配有保护层,其对于没有使用润滑剂的情况下光学头设备的碰撞具有很强的抵抗力。

Claims (13)

1.一种光存储系统,包括光存储介质(1)和光学头设备(6),所述介质包括一个基底(2),并在所述基底的至少一侧面上沉积有:
-记录叠层(3),其具有至少一个通过聚焦辐射光束(7)记录的记录层,所述聚焦辐射光束(7)从光学头设备(6)发出并具有预定的波长以及预定的数值孔径,
-光透射保护涂覆叠层(4,5),其置于记录叠层(3)和光学头设备(6)之间,用于保护记录叠层(3)免受光学头设备(6)的碰撞,
其特征在于所述保护涂覆叠层(4,5)至少包括以下层的多层(4,5):
-在离记录叠层最远处设置第一层(5),其具有小于40nm的厚度以及低于1.5J/m2表面能量的表面,
-与第一层(5)相邻的第二层(4),所述第二层(4)具有小于10GPa而大于0.001Gpa杨氏模量E。
2.根据权利要求1所述的光存储系统,其中所述第一层(5)具有H或更硬的铅笔硬度。
3.根据权利要求1或2所述的光存储系统,其中所述第一层(5)具有小于20nm的厚度。
4.根据权利要求1或2所述的光存储系统,其中所述第一层(5)具有小于10nm的厚度。
5.根据权利要求1所述的光存储系统,其中所述第一层(5)的表面具有小于1013Q/平方的电阻。
6.根据权利要求1-5的任一所述的光存储系统,其中第二层(4)具有小于125μm的厚度。
7.根据权利要求1-6的任一所述的光存储系统,其中第二层(4)具有小于1Gpa的杨氏模量E。
8.根据权利要求6或7所述的光存储系统,其中第二层(4)具有小于30μm的厚度。
9.根据权利要求6所述的光存储系统,其中所述第二层(4)包括紫外光可固化的丙烯酸树脂。
10.根据权利要求1或6所述的光存储系统,其中所述第一层(5)包括从氮化硅、二氧化硅、氧氮化硅和菱形碳(DLC)的组中选出的材料。
11.根据权利要求1所述的光存储系统,其中所述第一层(5)具有超过第二层(4)的临界表面应力的表面应力。
12.一种根据前述任一权利要求的光存储系统中所述的光存储介质(1)。
13.根据权利要求1-11中任一所述的光存储系统中的光存储介质(1)在高密度光记录应用中的使用,其中在介质(1)中读取和写入的过程中,光学头设备(6)设置在与介质(1)表面小于0.2mm的距离处。
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