CN1596039A - Active matrix electroluminescence device and method for fabricating the same - Google Patents
Active matrix electroluminescence device and method for fabricating the same Download PDFInfo
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- CN1596039A CN1596039A CNA200410064151XA CN200410064151A CN1596039A CN 1596039 A CN1596039 A CN 1596039A CN A200410064151X A CNA200410064151X A CN A200410064151XA CN 200410064151 A CN200410064151 A CN 200410064151A CN 1596039 A CN1596039 A CN 1596039A
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- 238000005401 electroluminescence Methods 0.000 title claims abstract description 36
- 238000000034 method Methods 0.000 title claims abstract description 30
- 239000011159 matrix material Substances 0.000 title claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 239000010410 layer Substances 0.000 claims description 84
- 230000004888 barrier function Effects 0.000 claims description 38
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000011241 protective layer Substances 0.000 claims description 20
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 15
- 239000010949 copper Substances 0.000 claims description 10
- 239000010931 gold Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 239000004411 aluminium Substances 0.000 claims description 9
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- 239000011651 chromium Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- 229910052779 Neodymium Inorganic materials 0.000 claims description 5
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- 239000003518 caustics Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052715 tantalum Inorganic materials 0.000 claims description 5
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 5
- 229910052719 titanium Inorganic materials 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052721 tungsten Inorganic materials 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 229910000838 Al alloy Inorganic materials 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical class [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 230000002708 enhancing effect Effects 0.000 abstract 1
- 238000009413 insulation Methods 0.000 description 13
- 230000003139 buffering effect Effects 0.000 description 10
- 239000011229 interlayer Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000007769 metal material Substances 0.000 description 5
- 239000012044 organic layer Substances 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
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- 239000011810 insulating material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
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- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 230000005283 ground state Effects 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B33/00—Electroluminescent light sources
- H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
Abstract
An active matrix electroluminescence device and a method for fabricating the same for enhancing electrical characteristics of a wire are disclosed. The method includes forming a wire on a non-emissive area of a substrate, and forming transistors on an emissive area of the substrate, forming an insulating layer on the substrate, the wire, and the transistors, and selectively removing the insulating layer, so as to expose the wire, forming a first electrode on the insulating layer in the emissive area, forming an electroluminous layer on the first electrode, and forming a second electrode on the electroluminous layer and the wire.
Description
The application requires in the rights and interests of the korean application No.P2003-062622 of application on September 8th, 2003, and it is combined in this as a reference as setting forth fully at this.
Technical field
The present invention relates to a kind of organic electroluminescence device, especially relate to a kind of active matrix electroluminescence device and manufacture method thereof.Though the present invention is suitable for a lot of application, it is particularly suitable for strengthening the electrical characteristic of wiring of the emitting area outside of this device.
Background technology
Electroluminescent device is because its wide visual angle, high aperture ratio and high chroma are being counted as flat-panel display device of future generation.More particularly, in organic electroluminescent (EL) device, when electric charge is injected into the organic luminous layer that into forms between hole injecting electrode and electron injection electrode, this electronics and exciton of this hole generation paired with each other, its excitation state drops to ground state, thus emission light.Therefore, compare with other display devices, this organic electroluminescence device (ELD) can be worked on lower voltage.
According to these motivational techniques, organic ELD can be divided into passivation ELD and active matrix ELD.This passivation ELD is by forming at organic electroluminescent layer on the transparency electrode on the transparent substrates, this transparency electrode and the negative electrode on this organic electroluminescent layer.Active matrix ELD be by a plurality of scan lines and data wire, electrical connection scan line and the data wire of determining pixel region on the substrate and control this electroluminescent device switching device, be electrically connected to the transparency electrode that forms in this switching device and the pixel region on this substrate (promptly, anode), form at the organic electro luminescent layer on this transparency electrode and the metal electrode on this organic electro luminescent layer (that is negative electrode).ELD is different with this passivation, and this active matrix ELD further comprises switching device, and it is a thin-film transistor (TFT).
In the active matrix electroluminescence device of association area, wiring and electrode in the emitting area outside do not have protective layer to cover, but are mainly covered by a tin indium oxide (ITO) layer.For example, an ITO layer forms in this wiring, makes and this common electrode (that is, negative electrode) contact that this ITO layer is a pixel electrode.Subsequently, this common electrode is formed on this ITO layer.
In this emission layer, because the layer of organic electroluminescent is formed between this pixel electrode and this common electrode, so the interfacial characteristics between pixel electrode and common electrode does not change.But, because this pixel electrode that forms in wiring is directly to contact mutually with this common electrode, so the interfacial characteristics between these two electrodes has changed.Therefore, the electric current between wiring and common electrode flows and has reduced, thereby has reduced product reliability.
Summary of the invention
Therefore, the present invention proposes a kind of active matrix electroluminescence device and manufacture method thereof, promptly eliminated one or more problems that cause owing to the restriction and the shortcoming of correlation technique basically.
An object of the present invention is to provide a kind of active matrix electroluminescence device and manufacture method thereof, it can strengthen the electrical characteristic in the wiring of emitting area outside.
To partly set forth other advantages of the present invention, purpose and characteristics in the following description, when consulting following content or can learn from the practice of the present invention, other advantages of the present invention, purpose and characteristics will become apparent for those this areas those skilled in the art.Structure by especially pointing out in the specification of book and claim herein and appended accompanying drawing can realize and obtain purpose of the present invention and other advantage.
In order to realize these purposes and other advantage, with consistent with purpose of the present invention, as implementing herein and describing widely, a kind of active matrix electroluminescence device comprises: the transistor that forms on the emitting area of substrate, the wiring that on the non-emitting area of substrate, forms, on the substrate and form and expose the insulating barrier of the part of this wiring on the transistor, first electrode that forms on the insulating barrier in emitting area, at the electroluminescence layer that forms on first electrode and second electrode that in this electroluminescence layer and this wiring, forms.
This wiring is connected to a pad portion and this wiring is by at least a formation the in molybdenum (Mo), aluminium (Al) and the neodymium (Nd).
This insulating barrier comprises a groove that is used to expose the part of this wiring on non-emitting area.
This first electrode is connected to the transistor of emitting area via the contact hole that penetrates this insulating barrier, and is formed by tin indium oxide (ITO).This second electrode is formed by aluminium (Al) or aluminium alloy.
In addition, this active matrix electroluminescence device further comprises: the metal level that forms in this wiring.Herein, this metal level is by at least a formation the in chromium (Cr), copper (Cu), tungsten (W), gold (Au), nickel (Ni), silver (Ag), titanium (Ti) and the tantalum (Ta).
In another aspect of the present invention, a kind of method that is used to make active matrix electroluminescence device comprises: form wiring on the non-emitting area of substrate, with on the emitting area of substrate, form transistor, on substrate, wiring and transistor, form insulating barrier, remove this insulating barrier selectively, so that expose this wiring, form first electrode on the insulating barrier in emitting area, form an electroluminescence layer on first electrode and in this electroluminescence layer and this wiring, forming second electrode.
Herein, this wiring and this transistorized source electrode and drain electrode are formed simultaneously.
And, make that when removing this insulating barrier selectively when exposing the part of this wiring, the contact hole that exposes this transistorized part is formed.
The method that is used to make this active matrix electroluminescence device further comprises: remove selectively this insulating barrier make expose this wiring after, in this wiring, form metal level.
And, forming first electrode on the insulating barrier in emitting area comprises: deposit tin indium oxide (ITO) layer and by using the corrosive agent that does not corrode this wiring to remove this indium tin oxide layer in non-emitting area selectively on the whole surface of this insulating barrier.
In another aspect of the present invention; a kind of method that is used to make active matrix electroluminescence device comprises: form wiring on the non-emitting area of substrate; with on the emitting area of substrate, form transistor; at substrate; form insulating barrier on wiring and the transistor; and remove this insulating barrier selectively; so that expose this wiring and this transistorized source electrode and drain electrode; in this wiring, form metal level; be connected to the electrode cable of each source electrode and drain electrode with formation; on the whole surface of this insulating barrier and this electrode cable, form protective layer; and remove this protective layer selectively; make and expose this metal level and this electrode cable; form first electrode on the insulating barrier in emitting area, forming an electroluminescence layer on first electrode and in this electroluminescence layer and this wiring, forming second electrode.
Herein, this wiring and this transistorized source electrode and drain electrode are formed simultaneously.
And this metal level and this electrode cable are formed by identical materials.
Should be understood that top general introduction and following detailed description of the present invention are exemplary and illustrative, and be used for providing further instruction the present invention for required protection.
Description of drawings
Included accompanying drawing is used for the invention provides further understanding, and this accompanying drawing is merged and constitute the part of this specification, is used to illustrate embodiments of the invention, and is used for explaining principle of the present invention in conjunction with explanation.In the accompanying drawings:
Fig. 1 illustrates the plane graph according to active matrix electroluminescence device of the present invention;
Fig. 2 A to 2E illustrates the drawing in side sectional elevation of the treatment step that shows the method that is used to make this active matrix electroluminescence device according to a first embodiment of the invention; With
Fig. 3 A to 3E illustrates the drawing in side sectional elevation of treatment step that is used to make the method for this active matrix electroluminescence device according to showing of second embodiment of the present invention.
Embodiment
To at length introduce the preferred embodiments of the present invention now, the accompanying drawing illustrated that its example is being followed.As possible, run through the identical reference number of this accompanying drawing and will be used to represent identical or similar part.
Fig. 1 illustrates the plane graph according to active matrix electroluminescence device of the present invention.
With reference to figure 1, emitting area and non-emitting area are limited on substrate 1.A plurality of emission pixels are formed in this emitting area.Pad portion 2, be connected to the common electrode contact wire 4d of this pad portion 2 and in this non-emitting area, formed such as the circuit of gate driver and data driver.In the present invention, when forming on wiring in this non-emitting area or the electrode, this pixel electrode (that is this ITO layer) and this common electrode (that is negative electrode) 16 do not form mutually directly contact.
First embodiment
Fig. 2 A to 2E illustrates the drawing in side sectional elevation of the treatment step that shows the method that is used to make this active matrix electroluminescence device according to a first embodiment of the invention.
With reference to figure 2A, in order in this emitting area, to form source electrode and drain electrode 4a and 4b and in this non-emitting area, to form the wiring 4d that is electrically connected this pad portion 2 and this common electrode, on glass substrate 1, form metal material layer, it is removed selectively then.This metal material layer is to be formed by any or its alloy in molybdenum (Mo), aluminium (Al) and the neodymium (Nd).
Subsequently, gate insulation layer 5 is formed on whole surface.More particularly, this gate insulation layer 5 is formed on this substrate 1, this source electrode and drain electrode 4a and 4b, raceway groove 4c and this wiring 4d, and then, gate electrode 6 is formed on the predetermined zone of this gate insulation layer 5 that aligns with raceway groove 4c.This source electrode and drain electrode 4a and 4b, this raceway groove 4c and this gate electrode 6 form the thin-film transistor that switches each pixel in this emitting area.
Interlayer dielectric 7 is formed on this gate insulation layer 5 and this gate electrode 6.Then, this gate insulation layer 5 and this gate electrode 6 are removed selectively, make to form a plurality of contact holes that expose the part surface of this source electrode and drain electrode 4a and 4b.At this moment, a groove is formed on this gate insulation layer 5 in this non-emitting area and this interlayer dielectric 7, is made and exposed this wiring 4d.Thereafter, this contact hole is full of metal, thereby forms a plurality of electrode cables 8, and each is electrically connected to this source electrode and drain electrode 4a and 4b.
Subsequently, such as SiN
xClass material or SiO
xThe insulating material of class material is deposited on the whole surface of this interlayer dielectric 7 and this electrode cable 8, so that form protective layer 9.Then, this protective layer 9 is removed selectively, thereby exposes this electrode cable 8 that is connected to this drain electrode 4b in emitting area.At this moment, the protective layer 9 that forms on wiring 4d also is removed.
With reference to figure 2B, in order to form pixel electrode 10 in this emitting area, metal material is deposited on this protective layer 9, and it is removed then selectively.In bottom emission ELD, this pixel electrode 10 is formed by transparent material, such as tin indium oxide (ITO).On the contrary, in top emission ELD, this pixel electrode is to be formed by the metal with high reflectance and work function.Because this bottom emission ELD is used as an example and provides in the present invention, this pixel electrode 10 is formed by the ITO layer.This ITO layer 10 only forms in the pixel region in emitting area, but this ITO layer 10 does not form on the wiring 4d of this non-emitting area.This corrosive agent is used to remove this ITO layer 10 on the wiring 4d that is deposited on non-emitting area.But the corrosive agent of Shi Yonging should not corrode the entity of wiring 4d herein.
Thereafter, shown in Fig. 2 C, insulating barrier 13 is deposited on the whole surface of protective layer 9 and pixel electrode 10.Then, this insulating barrier 13 is removed selectively, so that expose the part of this pixel electrode 10 and this wiring 4d.Herein, the borderline region between the pixel region of this insulating barrier 13 in emitting area.
With reference to figure 2D, shadow mask (shadow mask) (not shown) is used to organic electro luminescent layer 15 of deposit on this pixel electrode 10.At this moment, this organic electro luminescent layer 15 is not formed on this non-emission layer.This organic electro luminescent layer 15 is divided into redness (R) organic electro luminescent layer, green (G) organic electro luminescent layer and blueness (B) organic electro luminescent layer according to the color of sending.And R, G and B organic electro luminescent layer sequentially are formed in the corresponding pixel region.Herein, this organic electro luminescent layer comprises the organic layer (not shown), is used for respectively the hole that provides from this pixel electrode 10 injected and is conveyed into the hole injection layer (not shown) and the hole transmission layer (not shown) of this organic layer and is used for respectively the electronics that provides from this common electrode being injected and being conveyed into the electron injecting layer (not shown) and the electron transfer layer (not shown) of this organic layer.
With reference to figure 2E, aluminium (Al) layer or aluminium alloy layer are deposited on the whole surface of this organic electro luminescent layer 15, so that form this common electrode 16.This common electrode 16 is formed on the organic electro luminescent layer 15 in the emitting area and is formed on the wiring 4d and insulating barrier 13 in the non-emitting area.Therefore, this common electrode 16 is directly to contact with this wiring 4d.
Though not shown in figures, in follow-up technology, the protective layer (not shown) is formed, so that prevent that this organic electro luminescent layer 15 is oxidized and moist.Then, sealant (not shown) and transparent substrates are used to form a protective cap.
Second embodiment
Fig. 3 A to 3E illustrates the drawing in side sectional elevation of treatment step of method that is used to make this active matrix electroluminescence device according to second embodiment of the present invention.
With reference to figure 3A, in order in this emitting area, to form source electrode and drain electrode 24a and 24b and in this non-emitting area, to form the wiring 24d that is electrically connected to this common electrode, on glass substrate 21, form metal material layer, it is removed selectively then.This metal material layer is to be formed by any one of molybdenum (Mo), aluminium (Al) and neodymium (Nd) or alloy.
Subsequently, gate insulation layer 25 is formed on whole surface.More particularly, this gate insulation layer 25 is formed on this substrate 21, this source electrode and drain electrode 24a and 24b, raceway groove 24c and this wiring 24d.Then, gate electrode 26 is formed on the predetermined zone of this gate insulation layer 25 that aligns with raceway groove 24c.This source electrode and drain electrode 24a and 24b, this raceway groove 24c and this gate electrode 26 form the thin-film transistor of each pixel of switch in this emitting area.
Interlayer dielectric 27 is formed on this gate insulation layer 25 and this gate electrode 26.Then, this gate insulation layer 25 and this gate electrode 26 are removed selectively, make formation expose a plurality of contact holes on the part surface of this source electrode and drain electrode 24a and 24b.At this moment, groove is formed on this interlayer dielectric 27 and this gate insulation layer 25 in this non-emitting area, makes and exposes this wiring 24d.
Thereafter, this contact hole is full of metal, thereby forms a plurality of electrode cables 28, and each is electrically connected to this source electrode and drain electrode 24a and 24b.In addition, buffering metal level 31 is formed on the wiring 24d in the non-emitting area.This buffering metal level 31 by or formation after forming electrode cable 28 and protective layer 29, when perhaps this electrode cable 28 is formed and form.When this buffer electrode layer 31 was formed simultaneously with this electrode cable 28, this buffering metal level 31 was by forming with these electrode cable 28 identical materials.Herein, this buffer electrode layer 31 is not by being formed by the corrosive metal of ITO, such as any one or its any alloy of chromium (Cr), copper (Cu), tungsten (W), gold (Au), nickel (Ni), silver (Ag), titanium (Ti) and tantalum (Ta).
Subsequently, such as SiN
xClass material or SiO
xThe insulating material of class material is deposited on the whole surface of this gate electrode 26, this interlayer dielectric 27 and this electrode cable 28, so that form protective layer 29.Then, this protective layer 29 is removed selectively, thereby exposes this electrode cable 28 of this drain electrode 24b that is connected in the emitting area.At this moment, when forming after this protective layer 29 is being formed this buffering metal level 31, this protective layer 29 that is formed on this buffering metal level 31 also is removed.
With reference to figure 3B, the ITO layer is formed on this protective layer 29, so that form this pixel electrode 30 in this emitting area, then, this ITO layer is removed selectively.The corrosive agent that is used to remove this ITO layer 30 can be corrosive for the material of wiring 24d, and it is deposited on this ITO layer 30 in this non-emitting area.Because this buffering metal level 31 is formed on the wiring 24d, this buffering metal level 31 can prevent that wiring 24d is corroded.This ITO layer 30 only is formed in the interior pixel region of emitting area, and is not formed in this non-emitting area.
In addition, shown in Fig. 3 C, after this insulating barrier 33 of deposit, this insulating barrier 33 is removed selectively on the whole surface of this protective layer 29 and pixel electrode 30, so that expose the part of this pixel electrode 30 and this buffering metal level 31.Form borderline region between the pixel region of this insulating barrier 33 in emitting area.
With reference to figure 3D, the shadow mask (not shown) is used to organic electro luminescent layer 35 of deposit on this pixel electrode 30.At this moment, this organic electro luminescent layer 35 is not formed on this non-emission layer.
With reference to figure 3E, common electrode 36 is formed on the whole surface of this organic electro luminescent layer 35.This common electrode 36 is formed on the organic electro luminescent layer 35 in the emitting area and is formed on this buffering metal level 31 and insulating barrier 33 in the non-emitting area.Therefore, this common electrode 36 does not directly contact with this wiring 24d.On the contrary, this common electrode 36 is electrically connected to wiring 24d via buffering metal level 31.
Though not shown in figures, in follow-up technology, the protective layer (not shown) is formed, so that protect this organic electro luminescent layer 35 oxidized and moist.Then, sealant (not shown) and transparent substrates are used to form a protective cap.
As mentioned above, in active matrix active matrix electroluminescence device and manufacture method thereof, perhaps this ITO layer is not formed on this wiring or the electrode, its contact is from the common electrode of the outside of this emission layer, perhaps alternatively, form another metal level, rather than this ITO layer, thereby prevent by the variation on the caused interfacial characteristics of this ITO layer.
Apparent for those skilled in the art, under the situation that does not break away from spirit of the present invention or scope, can modifications and variations of the present invention are.Therefore, this invention is intended to cover the modifications and variations of the present invention that provided within claims and its equivalency range.
Claims (22)
1. active matrix electroluminescence device comprises:
The transistor that on the emitting area of substrate, forms;
The wiring that on the non-emitting area of substrate, forms;
On substrate and transistor, form and expose the insulating barrier of the part of this wiring;
First electrode that forms on the insulating barrier in emitting area;
The electroluminescence layer that on first electrode, forms; With
Second electrode that in this electroluminescence layer and this wiring, forms.
2. according to the device of claim 1, wherein this insulating barrier comprises a groove that is used to expose the part of this wiring on non-emitting area.
3. according to the device of claim 1, further comprise: the metal level that in this wiring, forms.
4. according to the device of claim 3, wherein this metal level is to be formed by in chromium (Cr), copper (Cu), tungsten (W), gold (Au), nickel (Ni), silver (Ag), titanium (Ti) and the tantalum (Ta) at least one.
5. according to the device of claim 1, wherein this wiring is to be formed by in molybdenum (Mo), aluminium (Al) and the neodymium (Nd) at least one.
6. according to the device of claim 1, wherein this wiring is connected to a pad portion.
7. according to the device of claim 1, wherein this first electrode is formed by tin indium oxide (ITO).
8. according to the device of claim 1, wherein this first electrode is connected to the transistor of this emitting area via the contact hole that penetrates this insulating barrier.
9. according to the device of claim 1, wherein this second electrode is by a kind of formation the in aluminium (Al) and the aluminium alloy.
10. method that is used to make active matrix electroluminescence device, it comprises:
Form transistor forming on wiring and the emitting area on the non-emitting area of substrate at this substrate;
On substrate, wiring and transistor, form an insulating barrier and remove this insulating barrier selectively, so that expose this wiring;
Form first electrode on the insulating barrier in emitting area; On first electrode, form an electroluminescence layer; With formation second electrode in this electroluminescence layer and this wiring.
11. according to the method for claim 10, wherein this wiring and this transistorized source electrode and drain electrode form simultaneously.
12. according to the method for claim 11, wherein this wiring and this source electrode and drain electrode are to be formed by in molybdenum (Mo), aluminium (Al) and the neodymium (Nd) at least one.
13., wherein form first electrode on the insulating barrier in emitting area and comprise according to the method for claim 10:
A tin indium oxide of deposit (ITO) layer on the whole surface of this insulating barrier; With by using the corrosive agent do not corrode this wiring to remove this indium tin oxide layer in non-emitting area selectively.
14. according to the method for claim 10, wherein ought remove this insulating barrier selectively and make when exposing the part of this wiring, form the contact hole that exposes this transistorized part.
15. the method according to claim 10 further comprises: remove selectively this insulating barrier make expose this wiring after, in this wiring, form metal level.
16. according to the method for claim 15, wherein this metal level is to be formed by in chromium (Cr), copper (Cu), tungsten (W), gold (Au), nickel (Ni), silver (Ag), titanium (Ti) and the tantalum (Ta) at least one.
17. according to the method for claim 10, wherein this second electrode is by a kind of formation the in aluminium (Al) and the aluminium alloy.
18. a method that is used to make active matrix electroluminescence device, it comprises:
Form transistor forming on wiring and the emitting area on the non-emitting area of substrate at this substrate;
On substrate, wiring and transistor, form an insulating barrier, and remove this insulating barrier selectively, so that expose this wiring and this transistorized source electrode and drain electrode;
In this wiring, form metal level and form the electrode cable that is connected to each source electrode and drain electrode;
On the whole surface of this insulating barrier and this electrode cable, form protective layer, and remove this protective layer selectively, make and expose this metal level and this electrode cable;
Form first electrode on the insulating barrier in emitting area; On first electrode, form an electroluminescence layer; With formation second electrode in this electroluminescence layer and this wiring.
19. according to the method for claim 18, wherein this wiring and this transistorized source electrode and drain electrode form simultaneously.
20. according to the method for claim 18, wherein this metal level and this electrode cable form simultaneously.
21. according to the method for claim 18, wherein this metal level and this electrode cable are formed by identical materials.
22. according to the method for claim 21, wherein this metal level and this electrode cable are to be formed by in chromium (Cr), copper (Cu), tungsten (W), gold (Au), nickel (Ni), silver (Ag), titanium (Ti) and the tantalum (Ta) at least one.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020030062622A KR100546668B1 (en) | 2003-09-08 | 2003-09-08 | Method for Organic electroluminescence display pannel fabrication |
| KR62622/2003 | 2003-09-08 |
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| CN1596039A true CN1596039A (en) | 2005-03-16 |
| CN100536193C CN100536193C (en) | 2009-09-02 |
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| EP (3) | EP3098856B1 (en) |
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| KR100782457B1 (en) | 2005-10-20 | 2007-12-05 | 삼성에스디아이 주식회사 | The Organic Light Emitting Display Device |
| US8026513B2 (en) * | 2006-01-05 | 2011-09-27 | Konica Minolta Holdings, Inc. | Bottom emission type organic electroluminescent panel |
| KR100875103B1 (en) | 2007-11-16 | 2008-12-19 | 삼성모바일디스플레이주식회사 | Organic light emitting display |
| KR101764272B1 (en) | 2010-12-02 | 2017-08-16 | 삼성디스플레이 주식회사 | Organic light emitting display device and manufacturing method thereof |
| KR101802523B1 (en) * | 2011-08-02 | 2017-11-28 | 엘지디스플레이 주식회사 | Organic light emitting display device and manufacturing method of the same |
| KR102568518B1 (en) * | 2016-10-25 | 2023-08-18 | 엘지디스플레이 주식회사 | Ultra High Density Flat Display Having High Aperture Ratio |
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| JP3306923B2 (en) | 1992-10-09 | 2002-07-24 | セイコーエプソン株式会社 | Liquid crystal device manufacturing method |
| JPH06337440A (en) | 1993-05-28 | 1994-12-06 | Seiko Epson Corp | Mim type nonlinear element and manufacture thereof |
| JP3318652B2 (en) * | 1996-12-17 | 2002-08-26 | 三菱電機株式会社 | Liquid crystal display device and method of manufacturing TFT array substrate used therein |
| JP3097841B2 (en) * | 1997-11-20 | 2000-10-10 | 松下電器産業株式会社 | Method of manufacturing photomask and active element array substrate |
| JP3423232B2 (en) * | 1998-11-30 | 2003-07-07 | 三洋電機株式会社 | Active EL display |
| JP3346324B2 (en) | 1999-02-26 | 2002-11-18 | 日本電気株式会社 | Etching method |
| JP4075028B2 (en) * | 1999-06-14 | 2008-04-16 | セイコーエプソン株式会社 | Circuit board, display device, and electronic device |
| JP2001102169A (en) * | 1999-10-01 | 2001-04-13 | Sanyo Electric Co Ltd | El display |
| JP2001281698A (en) | 2000-03-30 | 2001-10-10 | Advanced Display Inc | Production method for optoelectronic element |
| TW493282B (en) * | 2000-04-17 | 2002-07-01 | Semiconductor Energy Lab | Self-luminous device and electric machine using the same |
| JP2001337619A (en) * | 2000-05-25 | 2001-12-07 | Toshiba Corp | Method for manufacturing array substrate |
| KR100715943B1 (en) * | 2001-01-29 | 2007-05-08 | 삼성전자주식회사 | Liquid crystal display device and method for manufacturing the same |
| JP3608614B2 (en) | 2001-03-28 | 2005-01-12 | 株式会社日立製作所 | Display device |
| KR100600844B1 (en) | 2001-04-04 | 2006-07-14 | 삼성에스디아이 주식회사 | Method for fabricating OELD device |
| KR100682377B1 (en) * | 2001-05-25 | 2007-02-15 | 삼성전자주식회사 | Organic electroluminescence device and method for fabricating thereof |
| JP2003059939A (en) * | 2001-08-08 | 2003-02-28 | Advanced Display Inc | Thin film transistor array substrate and production method therefor |
| KR100743105B1 (en) | 2001-10-22 | 2007-07-27 | 엘지.필립스 엘시디 주식회사 | Organic Electro-Luminescence Display Device and Fabricating Method Thereof |
| US7042024B2 (en) | 2001-11-09 | 2006-05-09 | Semiconductor Energy Laboratory Co., Ltd. | Light emitting apparatus and method for manufacturing the same |
| TW582182B (en) * | 2003-02-19 | 2004-04-01 | Au Optronics Corp | AM-OLED display |
| US7057208B2 (en) * | 2003-03-25 | 2006-06-06 | Semiconductor Energy Laboratory Co., Ltd. | Display device and manufacturing method thereof |
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2003
- 2003-09-08 KR KR1020030062622A patent/KR100546668B1/en active IP Right Grant
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2004
- 2004-07-29 JP JP2004221860A patent/JP4702519B2/en not_active Expired - Fee Related
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| US20090153047A1 (en) | 2009-06-18 |
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| EP2161753A3 (en) | 2010-07-14 |
| US7518308B2 (en) | 2009-04-14 |
| JP2010153388A (en) | 2010-07-08 |
| CN100536193C (en) | 2009-09-02 |
| EP3098856B1 (en) | 2022-04-06 |
| JP5413745B2 (en) | 2014-02-12 |
| JP5083677B2 (en) | 2012-11-28 |
| JP4702519B2 (en) | 2011-06-15 |
| EP1513196A2 (en) | 2005-03-09 |
| JP2011100120A (en) | 2011-05-19 |
| EP3098856A1 (en) | 2016-11-30 |
| KR20050025786A (en) | 2005-03-14 |
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