CN1595175A - Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof - Google Patents
Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof Download PDFInfo
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- CN1595175A CN1595175A CN 200410041050 CN200410041050A CN1595175A CN 1595175 A CN1595175 A CN 1595175A CN 200410041050 CN200410041050 CN 200410041050 CN 200410041050 A CN200410041050 A CN 200410041050A CN 1595175 A CN1595175 A CN 1595175A
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Abstract
This invention discloses an apparatus and its measurement method to provide additional home position mechanical stress in the measurement of thin film electrical property, which comprises micrometer screw gage, rack and metal knife edge, wherein, there is located with an opening in the rack and the micrometer screw gage is fixed on the rack and is located on one side of the edge; the other edge side of the opening is located with a clamper to fix the film and underlay; the metal edge is fixed on the movable bar of the micrometer screw gage. When in measurement, It fixes one end of the film and underlay on the clamper of the apparatus and exposes the other end of the electrode on the metal edge and exerts different expansion and pressing stress on the thin film through adjusting the screw nut of the micrometer screw gage. This invention can be widely used in the study of impact of different thin film on electric property.
Description
One, technical field
The present invention relates in a kind of Physical Experiment and the membrane stress effect study to the film electricity performance measurement provides device and the using method that adds the original position mechanical stress, specifically a kind of can add that machinery is opened, the device of in site measurement film electric property and the using method of this device under the compressive stress situation.
Two, background technology
Electric property is the important parameter of thin film physics performance, comprise dielectric, ferroelectric, electricity is led, capacitance-voltage curve or the like, different materials has different emphasis.And the factors such as integrated encapsulation of substrate mismatch, thermal treatment and thin-film device all can be introduced the stress of MPa magnitude in film in the film preparation process, this stress has a significant impact the film various aspects of performance, even can have influence on device reliability and serviceable life.Thereby the variation of research film performance is particularly important under the stress.The ferroelectric thin-flim materials that for example is used for storer, ferroelectric properties are its principal characters, comprise ferroelectric hysteresis loop, fatigue, switching time and the switch-charge etc. of film.The thin-film ferroelectric performance is in applied stress and do not add the stress situation very big difference is arranged again, by comparing in the situation that has under the applied stress effect and do not add under the external carbuncle effect, can obtain the data of the ferroelectric properties of film under stress state, its result provides the reference of usefulness for the improvement of the relevant nature of analysed film and further performance.Thereby the change of measuring property of thin film under stress easily just seems and is even more important.Can open at present, " original position " ferroelectric properties (residual polarization under the compressive stress, coercive field, fatigue) instrument of test has only the U.S. to have according to our understanding, its usefulness be the circular sample of large scale (2-3 inch), with the lid of sample strip itself as the small size vacuum chamber, need to connect vacuum pump or source of the gas, make the wafer sample center to lower recess or upwards bloat by vacuum chamber being bled or inflating, to reach the purpose that applies pressure or tension stress to surperficial face, the size of concrete power also needs by calculating, the shortcoming of this metering system is: complex structure, operating difficulties, required sample size is big.
Three, summary of the invention
A kind of simple in structure, easy to operate device and measuring method that adds in-situ stress that provide in the film electricity performance measurement is provided, this device solves be difficult for for a long time film is applied mechanical external carbuncle and then the research stress difficult problem to the influence of film performance.
The objective of the invention is to be achieved through the following technical solutions:
Provide the device that adds in-situ stress in a kind of film electricity performance measurement, it is characterized in that: it comprises micrometer caliper, support and the metal edge of a knife, on support, be provided with an opening, micrometer caliper is rack-mount, and being positioned at a side of opening, the opposite side support of opening is provided with and is used for fixing the clamper of film together with substrate; Film growth is on substrate, and the metal edge of a knife is fixed on the movable bar of micrometer caliper.In the present invention, micrometer caliper can be vertically rack-mount, and film can be horizontally fixed on the clamper, and the metal edge of a knife can be horizontally fixed on the movable bar of micrometer caliper.
Among the present invention, support can be a rectangular frame, and the middle part on this long limit of rectangular frame is provided with opening.The distance of the bare terminal end and the metal edge of a knife should be less than the length of film together with substrate, and film is positioned at opening part during measurement.Support also can adopt other form, can be the annular that has opening, also can be made up of jointly two supports that separate, and an end support fixed film is together with substrate, and other end support is micrometer caliper fixedly.
A kind of utilization provides the measuring method that adds the in-situ stress device in the film electricity performance measurement, it is characterized in that: it comprises the steps:
A) with film growth on strip substrate with bottom electrode (as the used bottom electrode of film electrical measurement), an end bottom electrode is exposed, and with the end substrate back preparing conductive layer; Among the present invention, bottom electrode exposes can be more than the 2mm width, and the conductive layer width can adopt to be coated with elargol oven dry or the preparation of other way more than 2mm.
B) diverse location prepares discrete serial point-like electrode above film, and this point-like electrode contacts upper and lower electrode respectively with the conducting probe that connects the electrical performance testing instrument and carries out electrical performance testing as the used top electrode of electrical measurement.Among the present invention, can on film, prepare the point-like electrode by the method that adds mask.
C) other end of film together with substrate is fixed on the clamper of support, an end that exposes bottom electrode is free end and places in the metal edge of a knife.
D) apply tension stress; Nut on the rotating screw mircrometer gauge, driving the metal edge of a knife moves down, two joints of multimeter are distinguished the bottom electrode of the contacting metal edge of a knife and film, it when multimeter just begins to show resistance the equilibrium position, continue the rotation nut metal edge of a knife is descended, the falling head that records with respect to the equilibrium position is the side-play amount y that applies tension stress
Open max
E) apply compressive stress; Nut on the rotating screw mircrometer gauge, driving the metal edge of a knife moves up, two joints of multimeter are distinguished the contacting metal edge of a knife and substrate back conductive layer, it when multimeter just begins to show resistance the equilibrium position, continue the rotation nut metal edge of a knife is risen, the lifting height that records with respect to the equilibrium position is the side-play amount y that applies compressive stress
Press max
F) the effective length l of MEASUREMENTS OF THIN; Distance between the carrier openings place clamper and the metal edge of a knife is the effective length of film.
G) measuring position amount x; Top electrode center that conducting probe contacted and the distance between the metal edge of a knife are position quantity x.
H) MEASUREMENTS OF THIN is together with the thickness d of substrate.
I) by side-play amount y
Max, film effective length l, position quantity x and thickness d, calculate on the film length direction stress value F that determines the position according to formula.
In the present invention, above-mentioned steps D) and step e) order interchangeable.
The present invention is simple in structure, easy to operate, has solved to be difficult for that for a long time film is applied mechanical external carbuncle and to study the difficult problem of stress to the film performance influence.Can change at an easy rate and calculate the stress intensity that is applied on the film by the present invention, thereby further measure film in the variation that adds ferroelectric propertiess such as ferroelectric hysteresis loop, fatigue, switching time and switch-charge under the mechanical stress situation and other electric properties.Concrete Stress calculation formula is as follows:
See Fig. 2, the displacement of any point on the film on the Y direction can be expressed as:
In the formula, x is a position quantity, and l is the effective length of film, y
MaxFor the x=0 point is the side-play amount of film in the Y of metal knife-edge part direction.The radius-of-curvature of any point can be calculated by following formula:
Y ', y in the formula " be respectively single order and the second order difference quotient of y to x.Solve R value that above (1), (2) formula draw radius-of-curvature for this middle layer (film is on the surface, and the centre is a substrate slice).See Fig. 3, the deformation quantity of surface film when the length difference in upper surface or lower surface and middle layer is exactly stress application
D is the thickness of film together with substrate in the formula.Can obtain the stress value of this point by (3):
F=Δ * E
Film(4)
E in the formula
FilmDeformation modulus for film.
Four, description of drawings
Fig. 1 is a structural representation of the present invention;
Fig. 2 is an applied stress form synoptic diagram of the present invention;
Fig. 3 is a film deformation quantity synoptic diagram of the present invention;
Fig. 4 is the Bi that apparatus of the present invention record
4-xNd
xTi
3O
12(BNT) ferroelectric hysteresis loop of film is at the variation diagram that adds under the stress condition;
Fig. 5 is the Bi that apparatus of the present invention record
4-xNd
xTi
3O
12(BNT) the normalized residual polarization of film (being Pr/Pro, the residual polarization when Pro represents not add stress) is with the variation diagram of stress.
Five, embodiment
A kind of device that adds in-situ stress that provides in the film electricity performance measurement comprises micrometer caliper 1, support 2 and the metal edge of a knife 3, and support 2 is a rectangular frame, and the middle part on this long limit of rectangular frame is provided with opening.Micrometer caliper 1 vertically is installed on the support 2, and is positioned at a side of opening, and the opposite side support 1 of opening is provided with and is used for the clamper 4 of horizontal fixed film together with substrate; Film growth or be coated on the substrate, the metal edge of a knife 3 is horizontally fixed on the movable bar of micrometer caliper 1.
Among the present invention, the distance of the bare terminal end and the metal edge of a knife should be less than the length of film together with substrate, and film is positioned at opening part during measurement.Support also can adopt other form, can be the annular that has opening, also can be made up of jointly two supports that separate, and an end support fixed film is together with substrate, and other end support is micrometer caliper fixedly.
A kind of utilization provides the measuring method that adds the in-situ stress device in the film electricity performance measurement, it can be used for studying the influence of stress to film performance, comprises the steps:
A) film growth exposes more than the 2mm width end bottom electrode on the strip substrate with electrode (as the used bottom electrode of film electrical measurement), and adopts at the substrate back with end and to be coated with elargol oven dry or other way and to prepare conductive layer more than the 2mm width;
B) the film top prepares discrete serial point-like electrode by the method that adds mask at diverse location, as the used top electrode of electrical measurement, contacts upper and lower electrode respectively with the conducting probe that connects the electrical performance testing instrument and can carry out electrical performance testing.
C) other end of film together with substrate is fixed on the clamper 4 of support 2, an end that exposes bottom electrode is free end and places in the metal edge of a knife 3;
D) apply tension stress; Nut on this moment rotating screw mircrometer gauge 1, driving the metal edge of a knife 3 moves down, two joints of multimeter are distinguished the bottom electrode of the contacting metal edge of a knife 3 and film, it when multimeter just begins to show resistance the equilibrium position, continue the rotation nut, the metal edge of a knife 3 is descended, record falling head, be the side-play amount y that applies tension stress with respect to the equilibrium position
Open max
E) apply compressive stress; Nut on this moment rotating screw mircrometer gauge 1, driving the metal edge of a knife 3 moves up, two joints of multimeter are distinguished the contacting metal edge of a knife 3 and substrate back conductive layer, it when multimeter just begins to show resistance the equilibrium position, continue the rotation nut, the metal edge of a knife 3 is risen, record lifting height, be the side-play amount y that applies compressive stress with respect to the equilibrium position
Press max
F) the effective length l of MEASUREMENTS OF THIN; Distance between the carrier openings place clamper 4 and the metal edge of a knife 3 is the effective length of film;
G) measuring position amount x; Top electrode center that conducting probe contacted and the distance between the metal edge of a knife 3 are position quantity x;
H) MEASUREMENTS OF THIN is together with the thickness d of substrate;
I) by side-play amount y
Max, film effective length l, position quantity x and thickness d, can be according to formula (1), (2), (3), (4) calculate on the film length direction stress value F that determines the position.
Below be the Bi4-xNdxTi that uses apparatus of the present invention to record
3O
12(BNT) ferroelectric hysteresis loop of film is in the situation of change that adds under the stress condition.See Fig. 4, wherein, (+117.7MPa) positive sign is represented to add tension stress to film, and (70.7MPa) negative sign is represented to add compressive stress to film, and (0MPa) the expression film is in not afterburning state.
Fig. 5 (is Pr/Pro for the normalized residual polarization of film, Pr when Pro represents not add stress) with the situation of change of stress, wherein, horizontal ordinate is represented the size to the film stress application, tension stress represented in positive sign, negative sign is represented compressive stress, and ordinate is represented normalized residual polarization (being Pr/Pro).
Stress intensity is drawn by computing formula among Fig. 5, and partial data point is as shown in the table: get E during calculating
Film=16.5 * 10
11Dyn/cm
2(deformation modulus of BNT film).
| ?x(cm) | y(cm) | ?l(cm) | ?d(cm) | ?f(MPa-Stress) | ?Pr(μC/cm 2) | ?Pr/Pr0 |
| ?1.730 | ?-0.360 | ?1.806 | ?0.030 | ?-70.6 | ?31.183 | ?0.98637 |
| ?1.730 | ?-0.060 | ?1.806 | ?0.030 | ?-11.8 | ?31.272 | ?0.98918 |
| ?1.730 | ?0 | ?1.806 | ?0.030 | ?0 | ?31.614 | ?1.00000 |
| ?1.730 | ?0.060 | ?1.806 | ?0.030 | ?11.8 | ?31.720 | ?1.00335 |
| ?1.730 | ?0.360 | ?1.806 | ?0.030 | ?70.6 | ?32.752 | ?1.03600 |
| ?1.730 | ?0.600 | ?1.806 | ?0.030 | ?117.7 | ?33.535 | ?1.06076 |
As can be seen from the above table, the residual polarization Pr of film changes with the variation of stress.
Claims (4)
1, provides the device that adds in-situ stress in a kind of film electricity performance measurement, it is characterized in that: it comprises micrometer caliper (1), support (2) and the metal edge of a knife (3), on support (2), be provided with an opening, micrometer caliper (1) is installed on the support (2), and being positioned at a side of opening, the opposite side support (2) of opening is provided with and is used for fixing the clamper (4) of film together with substrate; The metal edge of a knife (3) is fixed on the movable bar of micrometer caliper (1).
2, provide the device that adds in-situ stress in the film electricity performance measurement according to claim 1, it is characterized in that: described support (2) is a rectangular frame, and the middle part on this long limit of rectangular frame is provided with opening.
3, a kind of utilization in the described film electricity performance measurement of claim 1 provides the measuring method that adds the in-situ stress device, and it is characterized in that: it comprises the steps:
A) film growth is had on the strip substrate of bottom electrode, an end bottom electrode is exposed, and preparing conductive layer at substrate back with end;
B) diverse location prepares discrete serial point-like electrode above film, and this point-like electrode contacts upper and lower electrode respectively with the conducting probe that connects the electrical performance testing instrument and carries out electrical performance testing as the used top electrode of electrical measurement;
C) film is fixed on together with the other end of substrate on the clamper (4) of support (2), an end that exposes bottom electrode is free end and places in the metal edge of a knife (3);
D) apply tension stress; Nut on the rotating screw mircrometer gauge (1), driving the metal edge of a knife (3) moves down, two joints of multimeter are distinguished the bottom electrode of the contacting metal edge of a knife and film, it when multimeter just begins to show resistance the equilibrium position, continue the rotation nut metal edge of a knife is descended, the falling head that records with respect to the equilibrium position is the side-play amount y that applies tension stress
Open max
E) apply compressive stress; Nut on the rotating screw mircrometer gauge (1), driving the metal edge of a knife (3) moves up, two joints of multimeter are distinguished the contacting metal edge of a knife and substrate back conductive layer, it when multimeter just begins to show resistance the equilibrium position, continue the rotation nut metal edge of a knife is risen, the lifting height that records with respect to the equilibrium position is the side-play amount y that applies compressive stress
Press max
F) effective length 1 of MEASUREMENTS OF THIN, the distance between support (2) the opening part clamper (4) and the metal edge of a knife (3) is the effective length of film;
G) measuring position amount x, the distance between the top electrode center that conducting probe contacted and the metal edge of a knife (3) is position quantity x;
H) MEASUREMENTS OF THIN is together with the thickness d of substrate;
I) by side-play amount y
Max, film effective length 1, position quantity x and thickness d, calculate on the film length direction stress value F that determines the position according to formula.
4, provide the measuring method that adds the in-situ stress device in the film electricity performance measurement according to claim 3, it is characterized in that: step D) and step e) order interchangeable.
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| CN 200410041050 CN1273809C (en) | 2004-06-22 | 2004-06-22 | Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof |
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| CN 200410041050 CN1273809C (en) | 2004-06-22 | 2004-06-22 | Apparatus for providing externally applied in-situ stress in thin film electrical property measurement and measuring method thereof |
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| CN1595175A true CN1595175A (en) | 2005-03-16 |
| CN1273809C CN1273809C (en) | 2006-09-06 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102564944A (en) * | 2011-12-09 | 2012-07-11 | 中国空间技术研究院 | Device for accurately bending printed circuit board |
| CN102914391A (en) * | 2012-10-19 | 2013-02-06 | 东南大学 | Device for supplying additional in-situ stress to film and measuring method for stress value thereof |
| TWI410639B (en) * | 2011-01-28 | 2013-10-01 | 私立中原大學 | Method for measuring net charge density of membrane and device thereof |
| CN105118796A (en) * | 2015-08-19 | 2015-12-02 | 西安电子科技大学 | Dual-axis stress applying device and method for testing output characteristic of strain MOS chip |
| CN105116313A (en) * | 2015-08-19 | 2015-12-02 | 西安电子科技大学 | Uniaxial stress applying device and method for testing output characteristic of strain MOS chip |
| CN105911400A (en) * | 2016-06-17 | 2016-08-31 | 电子科技大学 | Novel strain generation device |
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2004
- 2004-06-22 CN CN 200410041050 patent/CN1273809C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI410639B (en) * | 2011-01-28 | 2013-10-01 | 私立中原大學 | Method for measuring net charge density of membrane and device thereof |
| CN102564944A (en) * | 2011-12-09 | 2012-07-11 | 中国空间技术研究院 | Device for accurately bending printed circuit board |
| CN102914391A (en) * | 2012-10-19 | 2013-02-06 | 东南大学 | Device for supplying additional in-situ stress to film and measuring method for stress value thereof |
| CN102914391B (en) * | 2012-10-19 | 2015-01-28 | 东南大学 | Device for supplying additional in-situ stress to film and measuring method for stress value thereof |
| CN105118796A (en) * | 2015-08-19 | 2015-12-02 | 西安电子科技大学 | Dual-axis stress applying device and method for testing output characteristic of strain MOS chip |
| CN105116313A (en) * | 2015-08-19 | 2015-12-02 | 西安电子科技大学 | Uniaxial stress applying device and method for testing output characteristic of strain MOS chip |
| CN105911400A (en) * | 2016-06-17 | 2016-08-31 | 电子科技大学 | Novel strain generation device |
| CN105911400B (en) * | 2016-06-17 | 2018-06-19 | 电子科技大学 | A kind of strain generation device |
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| CN1273809C (en) | 2006-09-06 |
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