CN218620343U - Device for processing two-dimensional material nanostructure array - Google Patents
Device for processing two-dimensional material nanostructure array Download PDFInfo
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- CN218620343U CN218620343U CN202222358593.1U CN202222358593U CN218620343U CN 218620343 U CN218620343 U CN 218620343U CN 202222358593 U CN202222358593 U CN 202222358593U CN 218620343 U CN218620343 U CN 218620343U
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Abstract
The utility model discloses a device for processing a two-dimensional material nanostructure array, which comprises a processing chamber, an inflatable structure, a bracket, a first displacement workbench, a second displacement workbench, a template and an electric field assembly, wherein the inflatable structure is communicated with the processing chamber and used for inputting a gas reaction medium; the bracket is arranged in the processing chamber, and a horizontal supporting table surface and a vertical supporting table surface which are mutually vertical are formed on the bracket; the first displacement workbench is arranged on the horizontal support table top and used for bearing a two-dimensional material sample; the second displacement workbench is arranged on the vertical support table surface; the template is arranged on one side of the second displacement workbench, which faces to the two-dimensional material sample, and is used for transferring the nanostructure array to the two-dimensional material sample; the template is provided with a convex structure which is used for inducing the surface oxidation of the two-dimensional material sample; one end of the electric field component is connected with the first displacement workbench, and the other end of the electric field component is connected with the template and used for applying an electric field. The application improves the operability of cross-scale processing.
Description
Technical Field
The utility model relates to a two-dimensional material processing technology field especially relates to a device of two-dimensional material nanostructure array processing.
Background
At present, two-dimensional materials are the hot spot of research in the materials community. The two-dimensional material has the size characteristic of atomic-scale thickness, has unique characteristics of electricity, magnetism, optics, mechanics and the like due to the structural advantages of the surface without dangling bonds and the characteristic of large specific surface area, and has important application value in the fields of electronics, optoelectronics, catalysis, energy storage, solar cells, sensors, biomedicine and the like. Therefore, advanced manufacturing techniques for two-dimensional material devices are important. The cross-scale processing of two-dimensional material surfaces according to current production processes also mainly refers to technical means commonly used in silicon processes, such as photolithography and chemical etching.
On one hand, however, the two-dimensional material is extremely sensitive to regulation and control of light and the like, and the electron transport capacity of the two-dimensional material is easily changed by irradiation in the photoetching stage; on the other hand, the polymer film coated on the surface of the two-dimensional material is easy to generate residues, and the generated interface seriously influences the heat dissipation condition of the device during working and the like; the above problems all affect the device performance of the two-dimensional material in the application process; in other words, the existing cross-scale processing technology is complex, complex to operate, and easy to cause adverse effects on the original surface and interface of a two-dimensional material, and a large-area nanostructure array is not easy to process, resulting in low operability of cross-scale processing.
Accordingly, there is a need for improvements and developments in the art.
SUMMERY OF THE UTILITY MODEL
In view of the above-mentioned prior art not enough, the utility model aims at providing a device of two-dimensional material nanometer structure array processing aims at solving current cross yardstick processing two-dimensional material's complex operation, appears harmful effects easily, the low problem of actual maneuverability.
The technical scheme of the utility model as follows:
the device for processing the two-dimensional material nanostructure array comprises a processing chamber, an inflatable structure, a bracket, a first displacement workbench, a second displacement workbench, a template and an electric field assembly, wherein the inflatable structure is communicated with the processing chamber and is used for inputting a gas reaction medium into the processing chamber; the bracket is arranged in the processing chamber, and a horizontal supporting table surface and a vertical supporting table surface which are mutually perpendicular are formed on the bracket; the first displacement workbench is arranged on the horizontal support table surface and is used for bearing a two-dimensional material sample; the second translation stage is disposed on the vertical support table and extends directly above the first translation stage; the template is arranged on one side, facing the two-dimensional material sample, of the second displacement workbench and used for transferring the nanostructure array to the two-dimensional material sample; the surface of the template, which faces the two-dimensional material sample, is provided with a convex structure, and the convex structure is used for inducing the surface oxidation of the two-dimensional material sample; and one end of the electric field component is connected with the first displacement workbench, and the other end of the electric field component is connected with the template and used for applying an electric field.
The device for processing the two-dimensional material nanostructure array is characterized in that the first displacement workbench comprises a first slide way, a first slide block, a second slide way, a second slide block and a substrate, and the first slide way is arranged on the horizontal support table surface; the first sliding block is slidably arranged on the first slide way; the second slide way is arranged on the first slide block; the second sliding block is slidably arranged on the second slide way; the substrate is arranged on the second sliding block, is connected with the electric field assembly and is used for bearing the two-dimensional material sample; the sliding direction of the first sliding block is perpendicular to the sliding direction of the second sliding block.
The device for processing the two-dimensional material nanostructure array comprises a first displacement workbench, a second displacement workbench, a third slide block and a gasket, wherein the first slide block is arranged on a vertical supporting table top; the third sliding block is slidably arranged on the third slide way; the gasket is arranged on the third sliding block and extends to the position right above the substrate; the template is arranged on one side of the gasket, which faces the substrate.
The device for processing the two-dimensional material nanostructure array is characterized in that the gasket is an insulating gasket.
The device for processing the two-dimensional material nanostructure array is characterized in that the second displacement workbench further comprises a force sensor, and the force sensor is arranged on one side, away from the horizontal supporting table surface, of the gasket and used for detecting the mechanical load of the template in contact with the surface of the two-dimensional material.
The device for processing the two-dimensional material nanostructure array comprises an electric field component, a voltage amplifier and a current meter, wherein the input end of the voltage amplifier is electrically connected with the external electric field; the output end of the voltage amplifier is connected with a first channel and a second channel, the first channel is electrically connected with the template, and the second channel is electrically connected with the first displacement workbench; the current meter is used for measuring the current value of the first path or the second path.
The device for processing the two-dimensional material nanostructure array further comprises a hygrometer and relative humidity adjusting equipment, wherein the hygrometer is used for measuring the humidity in the processing chamber; the relative humidity adjusting device is communicated with the processing chamber and used for adjusting the humidity in the processing chamber.
The device for processing the two-dimensional material nanostructure array further comprises a thermometer and a temperature adjusting device, wherein the thermometer is used for measuring the temperature in the processing chamber, and the temperature adjusting device is connected with the processing chamber and used for controlling the temperature in the processing chamber.
The device for processing the two-dimensional material nanostructure array, wherein the gas reaction medium comprises at least one of water vapor, oxygen plasma and ozone.
The device for processing the two-dimensional material nanostructure array is characterized in that the template is detachably arranged on the second displacement workbench.
Compared with the prior art, the embodiment of the utility model provides a have following advantage:
the utility model discloses a device for processing two-dimensional material nanostructure array fixes two-dimensional material sample in a processing chamber for processing, the specific processing flow is that the two-dimensional material sample is fixed on a first displacement workbench, then a template provided with nanostructure array to be transferred is selected to be fixed on a second displacement workbench, and the processing chamber is inflated, air is exhausted, gas reaction medium is input, and the template is moved to a proper position above the two-dimensional material sample for preparing for processing; and finally, applying an electric field between the template and the two-dimensional material by starting the electric field assembly so as to induce the surface of the two-dimensional material sample to generate an oxidation reaction, and further realizing the transfer printing of the cross-scale large-area nano structure array. Generally speaking, the utility model discloses in only need one process just can go out the nano-structure array of large tracts of land at the surface machining of two-dimensional material sample, simplified the process flow who strides yardstick processing, avoided technology complicacy, complex operation, interface to remain the scheduling problem, be favorable to improving the product yield that yardstick processing was striden by a large scale to the maneuverability of yardstick processing technology is striden in the increase.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an apparatus for processing a two-dimensional nanostructure array of a material according to the present invention;
fig. 2 is a schematic structural diagram of a template according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a template according to another embodiment of the present invention;
fig. 4 is a schematic structural diagram of a template according to another embodiment of the present invention.
100, a processing chamber; 200. an inflatable structure; 300. a support; 310. a horizontal support table top; 320. a vertical support table; 400. a first displacement stage; 410. a first slideway; 420. a first slider; 430. a second slideway; 440. a second slider; 450. a substrate; 500. a second displacement table; 510. a third slideway; 520. a third slider; 530. a gasket; 540. a force sensor; 600. a template; 610. an array of nanostructures; 700. an electric field assembly; 710. an external electric field is applied; 720. a voltage amplifier; 721. a first path; 722. a second path; 730. an ammeter; 800. a hygrometer; 900. a relative humidity adjusting device; 1000. a thermometer; 1100. a temperature regulating device.
Detailed Description
In order to make the technical solution of the present invention better understood, the following figures in the embodiments of the present invention are combined to clearly and completely describe the technical solution in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to fig. 1, in an embodiment of the present invention, an apparatus for two-dimensional nanostructure array 610 is disclosed, which includes a processing chamber 100, an air-filled structure 200, a support 300, a first displacement table 400, a second displacement table 500, a template 600 and an electric field assembly 700, wherein the air-filled structure 200 is communicated with the processing chamber 100 for inputting a gas reaction medium into the processing chamber 100; the support 300 is arranged in the processing chamber 100, and a horizontal supporting table 310 and a vertical supporting table 320 which are perpendicular to each other are formed on the support 300; the first displacement table 400 is arranged on the horizontal support table 310 and is used for bearing a two-dimensional material sample; the second translation stage 500 is disposed on the vertical support table 320, and the second translation stage 500 extends directly above the first translation stage 400; the template 600 is disposed on a side of the second translation stage 500 facing the two-dimensional material sample for transferring the nanostructure array 610 onto the two-dimensional material sample; a raised structure is arranged on the surface of the template 600 facing the two-dimensional material sample, and the raised structure is used for inducing the surface oxidation of the two-dimensional material sample; one end of the electric field assembly 700 is connected to the first translation stage 400, and the other end is connected to the template 600, for applying an electric field.
The two-dimensional nanostructure array 610 of the present embodiment is disclosed as an apparatus for processing a two-dimensional sample of material held in a processing chamber 100, and the processing chamber 100 is sealed. The specific processing flow is that a two-dimensional material sample is fixed on a first displacement workbench 400, then a template 600 provided with a nanostructure array 610 to be transferred is selected and fixed on a second displacement workbench 500, the processing chamber 100 is inflated, air is exhausted, a gas reaction medium is input, and the template 600 is moved to a proper position above the two-dimensional material sample to prepare for processing; finally, an electric field is applied between the template 600 and the two-dimensional material by starting the electric field assembly 700, so that the surface of the two-dimensional material sample is induced to generate an oxidation reaction, and the transfer printing of the nano-structure array 610 with a cross-scale and large area is realized.
In summary, in the embodiment, an electric field is applied between the template 600 and the substrate 450, the nano-structure on the template 600 is transferred to the surface of the two-dimensional material, so that nano-micro-macro cross-scale processing is realized, a large-area nano-structure array 610 can be processed on the surface of the two-dimensional material sample by only one process, the process flow of the cross-scale processing is simplified, the processing efficiency is improved, the problems of complex process, complex operation, interface residue and the like are avoided, the yield of large-area cross-scale processing products is improved, and the operability of the cross-scale processing process is improved.
Specifically, the device of the two-dimensional material nanostructure array 610 disclosed in this embodiment meets the processing requirements of the nanostructure array 610 by controlling parameters such as mechanical loading and electric field form, can process different two-dimensional materials, and has the advantages of simple structure, high processing efficiency, wide applicable two-dimensional material range, simple operation, and low cost.
Specifically, the two-dimensional material sample disclosed in this embodiment has atomic-scale flatness on the surface, and is a single-layer or multi-layer material sample in which van der waals force acts between layers, such as a conductive graphene sample, a molybdenum disulfide sample, a non-conductive hexagonal boron nitride sample, a transition metal chalcogenide sample, and the like.
It should be noted that, in the present embodiment, only the type of the two-dimensional material sample is illustrated, but the protection scope of the present invention is not limited thereto, and other types of two-dimensional material samples should also be within the protection scope of the present invention as long as the two-dimensional material samples can achieve the technical effects disclosed in the present application.
As shown in fig. 2, fig. 3 and fig. 4, the nanostructure array 610 disclosed in this embodiment may be configured according to different requirements of the nanostructure array 610 on a two-dimensional material sample, such as a nanodot array, a nanobelt array, and the like, different forms of nanostructure arrays 610 are configured on the template 600, including but not limited to a nano grating, a triangular/rectangular pyramid, and the like, and the critical dimension parameters of the template 600 features may be designed according to the features of the two-dimensional material sample processed across the scale.
Specifically, as an implementation manner of this embodiment, it is disclosed that the gaseous reaction medium includes at least one of water vapor, oxygen plasma, and ozone. In the device disclosed in this embodiment, an oxidation reaction occurs on the surface of the two-dimensional material, and then the nanostructure array 610 is transferred, so different types of gas reaction media, such as water molecules in water vapor, or oxygen plasma, ozone, and the like, are selected according to the type of the two-dimensional material sample, the reaction product of the oxidation etching process in the electric field environment, and the like, and the oxidation etching is performed in the electric field environment; for example, by varying the relative humidity of the environment by introducing the ratio of nitrogen and water vapor through the gas filled structure 200, a stable oxide etch process can be formed between the template 600 and the sample.
It should be noted that the protection scope of the present invention is not limited thereto, and other types of gas reaction media should also be within the protection scope of the present invention as long as they can achieve the technical effects disclosed in the present application.
As shown in fig. 1, as another embodiment of this embodiment, it is disclosed that the first displacement table 400 includes a first slide 410, a first slider 420, a second slide 430, a second slider 440, and a base 450, and the first slide 410 is disposed on the horizontal support table 310; the first sliding block 420 is slidably disposed on the first sliding channel 410; the second slide way 430 is arranged on the first slide block 420; the second sliding block 440 is slidably disposed on the second sliding channel 430; the substrate 450 is arranged on the second slider 440, connected with the electric field assembly 700, and used for carrying the two-dimensional material sample; the sliding direction of the first slider 420 is perpendicular to the sliding direction of the second slider 440.
The first displacement table 400 disclosed in this embodiment is provided with two mutually perpendicular slide ways, so that the first slider 420 and the second slider 440 can respectively slide along two mutually perpendicular directions on a horizontal plane, and the second slide way 430 is further provided on the first slider 420, that is, the sliding track of the second slider 440 is influenced by the first slider 420; in view of the movement tracks of two dimensions, the second slider 440 can move freely on the horizontal support table 310, so that the position of the substrate 450 on the horizontal support table 310 can be flexibly and accurately adjusted, the two-dimensional material sample and the template 600 can be conveniently aligned, and the transfer yield can be improved. In addition, for two-dimensional material samples with different specifications and templates 600 with different specifications, the position requirement is different during alignment, so that the position of the substrate 450 can be changed, different two-dimensional material samples can be processed conveniently, more production requirements can be met, and the service efficiency of the device can be improved.
As shown in fig. 1, as another embodiment of this embodiment, it is disclosed that the second displacement table 500 includes a third slide 510, a third slide 520, and a spacer 530, the third slide 510 is disposed on the vertical support table 320, and an extending direction of the third slide 510 is perpendicular to the horizontal support table 310; the third sliding block 520 is slidably disposed on the third sliding channel 510; the pad 530 is disposed on the third slider 520 and extends to a position right above the substrate 450; the template 600 is disposed on a side of the spacer 530 facing the substrate 450.
In this embodiment, the third slider 520 slides on the third slide 510 to drive the template 600 to move towards or away from the two-dimensional material sample, so that the mechanical contact state between the template 600 and the two-dimensional material sample can be adjusted in the preparation stage, and then transfer printing is performed, thereby improving the controllability in the processing process, making the process parameters of cross-scale processing more controllable, and being beneficial to improving the processing precision; moreover, when different two-dimensional material samples are processed, the requirements on mechanical load between the template 600 to be achieved are different, so that the third slide 510 and the third slide 520 are arranged to flexibly adjust the position of the template 600, which is beneficial to adapting to the processing flow of different two-dimensional material samples and further increasing the applicable process occasions of the cross-scale processing device.
In addition, the template 600 disclosed in this embodiment is fixed on the spacer 530 and can move up and down along with the spacer 530, so that when different two-dimensional material samples are processed, different templates 600 need to be fixed correspondingly, the processed template 600 is moved away from the two-dimensional material samples, and the spacer 530 and the template 600 can be moved to a position away from the horizontal support platform 310, so as to obtain a larger dismounting space and facilitate operation.
Specifically, in another embodiment of this embodiment, it is disclosed that the first slider 420, the second slider 440, and the third slider 520 can be controlled by a mechanical driving manner, for example, by a numerical control driving manner or an electromagnetic driving manner, which is beneficial to improving the automation degree and the control precision of the apparatus, and obtaining a better processing effect.
It should be noted that, in the present embodiment, the type of the mechanical driving of the first slider 420, the second slider 440 and the third slider 520 is only illustrated, but the protection scope of the present invention is not limited thereto, and other types of driving manners as long as the technical effects disclosed in the present application can be achieved should also be within the protection scope of the present application as equivalent alternatives to the present invention.
Specifically, as another implementation manner of this embodiment, it is disclosed that the spacers 530 are insulating spacers 530. The cross-scale processing apparatus disclosed in this embodiment applies an electric field between the mold plate 600 and the first translation stage 400 through the electric field assembly 700, and in order to prevent the current from being conducted to the third slider 520 and even to the horizontal support stage 310 through the spacer 530, the spacer 530 is provided as an insulating spacer 530, such as a rubber sheet, a plastic sheet, a ceramic sheet, etc., thereby improving safety when the electric field is applied and maintaining a stable operation state of the apparatus.
As shown in fig. 1, as another embodiment of this embodiment, it is disclosed that the second displacement table 500 further includes a force sensor 540, and the force sensor 540 is disposed on a side of the spacer 530 facing away from the horizontal support table 310, and is used for detecting a mechanical load of the template 600 contacting with the surface of the two-dimensional material. In this embodiment, the force sensor 540 is disposed on the spacer 530 and moves synchronously with the spacer 530, so that the mechanical load of the other side template 600 of the spacer 530 can be monitored in real time, the movement of the third slider 520 can be determined, and the control of the process parameters in the machining process can be increased according to the monitored data. In addition, by disposing the force sensor 540 on the side of the spacer 530 facing away from the stencil 600, electrical leakage through the stencil 600 can be avoided to keep the force sensor 540 working properly.
As shown in fig. 1, as another embodiment of the present embodiment, it is disclosed that the electric field assembly 700 includes an applied electric field 710, a voltage amplifier 720 and an ammeter 730, wherein an input end of the voltage amplifier 720 is electrically connected to the applied electric field 710; the output end of the voltage amplifier 720 is connected with a first path 721 and a second path 722, the first path 721 is electrically connected with the template 600, and the second path 722 is electrically connected with the first displacement table 400; the current meter 730 is used to measure the current value on the first path 721 or the second path 722.
The external electric field 710 disclosed in this embodiment is used to generate a direct current or an alternating current of any waveform, and the form of the electric field may be selected according to the two-dimensional material sample to be processed, the template 600, the processing effect, and other factors, and the electric field is output to the voltage amplifier 720, and the voltage peak is amplified by the voltage amplifier 720, and then is transmitted to the template 600 and the two-dimensional material sample, so that an electric field is generated between the two-dimensional material sample and the template 600, and etching processing is performed.
Specifically, in this embodiment, the ammeter 730 is further disposed on the first path 721 or the second path 722 to measure the current value of the path, and the ammeter 730 with high sensitivity can be used as the ammeter 730, so that the applied electric field 710 or the voltage amplifier 720 can be regulated and controlled according to the measured current value, and the main characteristic parameters of the electric field, such as the electric field strength, the frequency, and the like, can be controlled to generate a suitable electric field strength to induce the surface of the two-dimensional material sample to be oxidized; in addition, in the actual processing process, electric field parameters and other process parameters such as oxidation time, contact force and the like can be comprehensively regulated and controlled, a plurality of reaction factors are controlled, the edge of the oxidation structure on the surface of the two-dimensional material sample is continuously optimized, consistency and uniformity are realized, the most appropriate processing condition is achieved, and the processing resolution of the nanostructure array 610 is improved; it can be seen that the electric field assembly 700 disclosed in this embodiment can realize more accurate regulation and control of the electric field size in the machining process, improve the control degree of the machining process, and facilitate increasing the machining precision.
As another embodiment of this embodiment, as shown in fig. 1, the apparatus for two-dimensional material nanostructure array 610 further comprises a hygrometer 800 and a relative humidity adjustment device 900, wherein the hygrometer 800 is used for measuring the humidity in the processing chamber 100; the relative humidity adjusting apparatus 900 communicates with the process chamber 100 for adjusting the humidity inside the process chamber 100.
In this embodiment, the humidity in the processing chamber 100 is detected and controlled to increase the control of the process parameters of the processing process, so as to facilitate processing under more stable and suitable processing conditions, improve the uniformity of processing the nanostructure array 610, and further increase the operability of the cross-scale processing flow.
As shown in fig. 1, as another embodiment of this embodiment, it is disclosed that the apparatus of the two-dimensional material nanostructure array 610 further includes a thermometer 1000 and a temperature adjustment device 1100, the thermometer 1000 is used for measuring the temperature in the processing chamber 100, and the temperature adjustment device is connected to the processing chamber 100 and is used for controlling the temperature in the processing chamber 100.
In this embodiment, the temperature in the processing chamber 100 is detected and controlled to increase the control of the process parameters of the processing process and improve the accurate control of the environmental parameters, so as to facilitate the processing under more stable and suitable processing conditions, thereby increasing the operability of the cross-scale processing flow.
Specifically, in one embodiment of the present embodiment, it is disclosed that the inflatable structure 200, the electric field assembly 700, the force sensor 540, the hygrometer 800, the relative humidity adjustment device 900, the thermometer 1000, the temperature adjustment device 1100, and the like may be provided at the same time. The device disclosed by the embodiment can accurately regulate and control the process parameters of the cross-scale machining process from multiple dimensions so as to meet the production and machining requirements with better uniformity and repeatability; different from the traditional processing method, the method breaks through the limitation of single structural form and characteristic dimension when the template 600 method is used for preparing the nano structure on a large scale, and can realize the processing function of the nano structure array 610 with low cost, high speed and cross-scale.
In addition, by controlling multiple dimensions, the preparation of the size-controllable nanostructure array 610 can be achieved during the processing of a two-dimensional material sample according to the characteristic parameters of the template 600 size and the process parameters of the cross-scale processing process. The device disclosed in this embodiment does not need to spin a polymer film on the surface of a two-dimensional material sample and remove the photoresist, and does not need to remove or clean the template 600 on the premise of ensuring the processing range and the processing efficiency for cross-scale processing, and the template 600 can be reused, thereby reducing the processing cost of the preparation technology and preventing any damage to the processed nanostructure array 610 in the subsequent process treatment stage.
In addition, the cross-scale processing device disclosed in the embodiment can complete work in an atmospheric environment, does not need other etching methods for assistance in the processing process, does not produce any waste discharged into air or water, and is beneficial to environmental protection.
Specifically, as another embodiment of this embodiment, it is disclosed that the template 600 is detachably mounted on the second translation table 500. The template 600 and the second displacement workbench 500 which are disclosed in the embodiment can be detachably mounted, so that different two-dimensional material samples to be processed can be adapted through replacing different types of templates 600, different processing requirements can be met, and the applicability of the device is improved.
In summary, the present application discloses an apparatus for two-dimensional material nanostructure array 610, which comprises a processing chamber 100, an air-filled structure 200, a support 300, a first displacement stage 400, a second displacement stage 500, a template 600 and an electric field assembly 700, wherein the air-filled structure 200 is communicated with the processing chamber 100 for inputting a gas reaction medium into the processing chamber 100; the support 300 is arranged in the processing chamber 100, and a horizontal support table 310 and a vertical support table 320 which are perpendicular to each other are formed on the support 300; the first displacement stage 400 is disposed on the horizontal support stage 310 for carrying a two-dimensional material sample; the second translation stage 500 is disposed on the vertical support table 320, and the second translation stage 500 extends to just above the first translation stage 400; the template 600 is disposed on a side of the second translation stage 500 facing the two-dimensional material sample for transferring the nanostructure array 610 onto the two-dimensional material sample; a raised structure is arranged on the surface of the template 600 facing the two-dimensional material sample, and the raised structure is used for inducing the surface oxidation of the two-dimensional material sample; one end of the electric field assembly 700 is connected to the first translation stage 400, and the other end is connected to the template 600, for applying an electric field.
The two-dimensional material nanostructure array 610 device disclosed in this embodiment fixes a two-dimensional material sample in the processing chamber 100 for processing, and the specific processing flow is to fix the two-dimensional material sample on the first displacement table 400, then select the template 600 provided with the nanostructure array 610 to be transferred to be fixed on the second displacement table 500, and inflate the processing chamber 100, exhaust air, input a gas reaction medium, and move the template 600 to a proper position above the two-dimensional material sample to prepare for processing; finally, an electric field is applied between the template 600 and the two-dimensional material by starting the electric field assembly 700, so that the surface of the two-dimensional material sample is induced to generate an oxidation reaction, and the transfer printing of the nano-structure array 610 with a cross-scale and large area is realized. In summary, in this embodiment, a large area of the nanostructure array 610 can be processed on the surface of the two-dimensional material sample by only one process, so that the process flow of the cross-scale processing is simplified, the problems of complex process, complex operation, interface residue and the like are avoided, and the yield of the large-area cross-scale processed product is improved, so as to increase the operability of the cross-scale processing process.
It should be noted that, in the present application, the embodiments and features of the embodiments may be combined with each other without conflict.
It should be noted that the present invention is described with reference to the device for processing two-dimensional nanostructure array, but the present invention is not limited to the device for processing two-dimensional nanostructure array, and can also be applied to the production and use of other similar workpieces.
It will be understood that the invention is not limited to the precise arrangements described above and shown in the drawings and that various modifications and changes may be made without departing from the scope thereof. The scope of the present invention is limited only by the appended claims.
The above description is only for the preferred embodiment of the present invention, and is not intended to limit the present invention, and any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention should be included within the protection scope of the present invention.
Claims (10)
1. An apparatus for processing a two-dimensional nanostructure array of a material, comprising:
a processing chamber;
the gas filling structure is communicated with the processing chamber and is used for inputting a gas reaction medium into the processing chamber;
the support is arranged in the processing chamber, and a horizontal supporting table surface and a vertical supporting table surface which are mutually perpendicular are formed on the support;
the first displacement workbench is arranged on the horizontal support table surface and is used for bearing a two-dimensional material sample;
a second translation stage disposed on the vertical support deck and extending directly above the first translation stage;
the template is arranged on one side, facing the two-dimensional material sample, of the second displacement workbench and used for transferring the nanostructure array onto the two-dimensional material sample; the surface of the template facing the two-dimensional material sample is provided with a convex structure, and the convex structure is used for inducing the surface oxidation of the two-dimensional material sample;
and one end of the electric field component is connected with the first displacement workbench, and the other end of the electric field component is connected with the template and used for applying an electric field.
2. The apparatus of claim 1, wherein the first displacement stage comprises:
the first slideway is arranged on the horizontal support table-board;
the first sliding block is slidably arranged on the first slide way;
the second slide way is arranged on the first slide block;
the second sliding block can be arranged on the second slide way in a sliding way;
the substrate is arranged on the second sliding block, is connected with the electric field assembly and is used for bearing the two-dimensional material sample;
the sliding direction of the first sliding block is perpendicular to that of the second sliding block.
3. The apparatus for processing a two-dimensional nanostructure array of material as claimed in claim 2, wherein the second displacement stage comprises;
the third slide way is arranged on the vertical supporting table board, and the extending direction of the third slide way is vertical to the horizontal supporting table board;
the third sliding block is slidably arranged on the third slide way;
the gasket is arranged on the third sliding block and extends to the position right above the substrate; the template is arranged on one side of the gasket, which faces the substrate.
4. The apparatus of claim 3, wherein the spacer is an insulating spacer.
5. The apparatus of claim 3, wherein the second stage further comprises a force sensor disposed on a side of the pad facing away from the horizontal support table for detecting a mechanical load of the template contacting the surface of the two-dimensional material.
6. The apparatus of claim 1, wherein the electric field assembly comprises:
an external electric field is applied;
the input end of the voltage amplifier is electrically connected with the external electric field; the output end of the voltage amplifier is connected with a first path and a second path, the first path is electrically connected with the template, and the second path is electrically connected with the first displacement workbench;
and the current meter is used for measuring the current value on the first path or the second path.
7. The apparatus for processing a two-dimensional nanostructure array of material as claimed in claim 1, further comprising a hygrometer for measuring the humidity in the processing chamber and a relative humidity adjusting device; the relative humidity adjusting device is communicated with the processing chamber and used for adjusting the humidity in the processing chamber.
8. The apparatus of claim 1, further comprising a temperature gauge for measuring a temperature within the processing chamber and a temperature regulating device coupled to the processing chamber for controlling the temperature within the processing chamber.
9. The apparatus of claim 1, wherein the gaseous reaction medium comprises at least one of water vapor, oxygen plasma, and ozone.
10. The apparatus of claim 1, wherein the template is removably mounted on the second translation stage.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202222358593.1U CN218620343U (en) | 2022-09-05 | 2022-09-05 | Device for processing two-dimensional material nanostructure array |
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