CN1588794A - Radio frequency band low temperature low noise amplifier - Google Patents
Radio frequency band low temperature low noise amplifier Download PDFInfo
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- CN1588794A CN1588794A CN 200410074736 CN200410074736A CN1588794A CN 1588794 A CN1588794 A CN 1588794A CN 200410074736 CN200410074736 CN 200410074736 CN 200410074736 A CN200410074736 A CN 200410074736A CN 1588794 A CN1588794 A CN 1588794A
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Abstract
This invention relates to RF range low-temp.l low-noise amplifier. According the connections of the feet of transistors, the types of the amplifier circuits are: input matching network, output matching network and negative feed-back network. This ivnented product can reduce noise of front part of the super-conduction receiver and to realize high sensitivity of the front part of the super-conduction receiver. It has advantages of small standing-wave retio (SWR), small size, long term stable working, e.g. when used ni CDMA, the SWR of input voltage <1.3, the output SWR<2.5, noise coefficient <0.3 dB, and long period working under 72K.
Description
Technical field
The invention belongs to the amplifier region in the radio-frequency technique, particularly a kind of radio frequency low temperature low noise amplifier.
Background technology
Amplifying circuit is a kind of main microwave circuit, and it realizes amplifying needed microwave signal from noise with disturbing, and send late-class circuit to handle.Processing gain is an important indicator of amplifying circuit, must reduce the useless composition that is mingled in the signal simultaneously as far as possible.Noise is a kind of time domain statistical indicator, and noise factor is defined as the ratio of input signal-to-noise ratio and output signal-to-noise ratio in order to the index of tolerance circuit additive noise in the ratio of overall noise.Noise factor generally is a relative value dB scale.Good amplifying circuit needs extremely low noise factor, and realizing does not have the amplification of making an uproar.Present existing amplifying circuit is for normal temperature environment designs, owing to can vary with temperature in the S of amplifier pipe parameter, causes amplifier to depart from the working point at low temperatures and cisco unity malfunction.
Summary of the invention
The objective of the invention is to be issued to a kind of radio frequency low temperature low noise amplifier of utmost point low-noise factor and low input standing-wave ratio at the superconduction environment in order to realize the hypersensitivity of high-temperature superconductor receiver front end system.It is characterized in that: described amplifier adopts the microstrip line of an end ground connection to be connected to transistor source as source negative feedback circuit 2, improves the stability of amplifier, makes circuit have low noise and input vswr simultaneously.Constitute T type network 1 by electric capacity 21 and inductance 22 and be connected to the transistor controls utmost point, match circuit for the input-output circuit of amplifier, play the input noise matching effect, under the situation of input optimum noise coupling, the noise minimum of amplifier, be the lowest noise of pipe, the lowest noise of pipe can significantly reduce at low temperatures simultaneously, thereby makes amplifier that very low noise be arranged.Simultaneously, inductance 22, electric capacity 23 and resistance 24 play the effect that increases low-frequency stability; Adopt the inductance coil of lumped parameter, make the circuit size minimization, reduce the refrigeration power consumption, strengthened frequency bandwidth simultaneously.Forms jointly with resistance 44,47 by electric capacity 41,43,45 and inductance 42,46 and to diminish output coupling T type network 3 and be connected to the transistor collection, make amplifier have better output standing wave, be convenient to the resonance-amplifier gain simultaneously, and do not influence the frequency bandwidth characteristics of amplifier.Adopt the method for fine setting dc point.Can simplify the adjustment work of amplifier under the low-temperature condition, relax the requirement that the microwave transistor parameter is changed simultaneously, what make amplifier has an optimum performance when low temperature, improved rate of finished products simultaneously.
The invention has the beneficial effects as follows the overall noise that can reduce the superconduction receiver front end, realize the high sensitivity of superconduction receiver front end, and under whole frequency low temperature steady operation.The present invention simultaneously is far smaller than conventional amplifying circuit on noise, CDMA frequency range amplifier index of the present invention is: standing wave ratio of input voltage＜1.3, output voltage standing-wave ratio＜2.5, noise factor＜0.3dB, and under 72K long-term stable operation.The noise factor of this circuit is than the low 1-3dB of custom circuit, and it is little to have standing-wave ratio, and volume is little, characteristics such as vacuum and low temperature long-term stable operation.
Description of drawings
Fig. 1 is a radio frequency low temperature low noise amplifier schematic diagram.
Fig. 2 is 1 a part schematic diagram among Fig. 1.
Fig. 3 is 2 part schematic diagrams among Fig. 1.
Fig. 4 is 3 part schematic diagrams among Fig. 1.
Embodiment
The present invention is in order to realize the hypersensitivity of high-temperature superconductor receiver front end system, to be issued to a kind of radio frequency low temperature low noise amplifier of utmost point low-noise factor and low input standing-wave ratio at the superconduction environment.Figure 1 shows that radio frequency low temperature low noise amplifier schematic diagram, its amplifying circuit is divided into input matching network 1, output matching network 3, negative feedback network 2 according to connecting transistorized different pins.Wherein 13,14,16,, the earth point of 17,19,111 indication circuits; 11, the signaling point of each networks connection of 12,15,18,110 expressions.
This amplifier adopts the microstrip line of an end ground connection as source negative feedback circuit 2 (as shown in Figure 3), improves the stability of amplifier, makes circuit have low noise and input vswr simultaneously.Constitute T type network 1 by electric capacity 21 and inductance 22, input-output Circuit Matching circuit for amplifier, play the input noise matching effect, under the situation of input optimum noise coupling, the noise minimum of amplifier, be the lowest noise of pipe, the lowest noise of pipe can significantly reduce at low temperatures simultaneously, thereby makes amplifier that very low noise be arranged.Simultaneously, 22 and 23,24 play the effect (as shown in Figure 2) that increases low-frequency stability; Adopt the inductance coil of lumped parameter, make the circuit size minimization, reduce the refrigeration power consumption, strengthened frequency bandwidth simultaneously.Forms jointly with resistance 44,47 by electric capacity 41,43,45 and inductance 42,46 and to diminish output and mate 3 (as shown in Figure 4) of T type network.Make amplifier have better output standing wave, be convenient to the resonance-amplifier gain simultaneously, and do not influence the frequency bandwidth characteristics of amplifier.Adopt the method for fine setting dc point.Can simplify the adjustment work of amplifier under the low-temperature condition, relax the requirement that the microwave transistor parameter is changed simultaneously, what make amplifier has an optimum performance when low temperature, improved rate of finished products simultaneously.
Claims (1)
1. radio frequency low temperature low noise amplifier, it is characterized in that: described amplifier comprises that the microstrip line of an end ground connection is connected to transistor source as source negative feedback circuit (2), improve the stability of amplifier, make circuit have low noise and input vswr simultaneously; Constitute T type network (1) by electric capacity (21) and inductance (22) and be connected to the transistor controls utmost point, match circuit for the input-output circuit of amplifier, play the input noise matching effect, under the situation of input optimum noise coupling, the noise minimum of amplifier is the lowest noise of pipe, and the lowest noise of pipe can significantly reduce at low temperatures simultaneously, thereby make amplifier that very low noise be arranged, inductance (22), electric capacity (23) and resistance (24) play the effect that increases low-frequency stability simultaneously; Adopt the inductance coil of lumped parameter, make the circuit size minimization, reduce the refrigeration power consumption, strengthened frequency bandwidth simultaneously; Forms jointly by electric capacity (41), (43), (45) and inductance (42), (46) same resistance (44), (47) and to diminish output and mate T type network (3) and be connected to the transistor collector, make amplifier have better output standing wave, be convenient to the resonance-amplifier gain simultaneously, and do not influence the frequency bandwidth characteristics of amplifier.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410074736XA CN100428625C (en) | 2004-09-14 | 2004-09-14 | Radio frequency band low temperature low noise amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200410074736XA CN100428625C (en) | 2004-09-14 | 2004-09-14 | Radio frequency band low temperature low noise amplifier |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1588794A true CN1588794A (en) | 2005-03-02 |
| CN100428625C CN100428625C (en) | 2008-10-22 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200410074736XA Expired - Fee Related CN100428625C (en) | 2004-09-14 | 2004-09-14 | Radio frequency band low temperature low noise amplifier |
Country Status (1)
| Country | Link |
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| CN (1) | CN100428625C (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751962A (en) * | 2012-07-13 | 2012-10-24 | 哈尔滨工程大学 | Broadband active matching method and matching circuit for electronically small receiving antenna based on negative impedance conversion |
| CN103117711A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Monolithic integrated radio frequency high-gain low-noise amplifier |
| CN104113288A (en) * | 2013-04-22 | 2014-10-22 | 中国科学技术大学 | Low-temperature low-noise amplifier |
| CN104883138A (en) * | 2015-06-23 | 2015-09-02 | 中国科学技术大学 | Broadband low-noise amplifier double used in indoor temperature and extremely low temperature |
| CN114024514A (en) * | 2021-10-25 | 2022-02-08 | 电子科技大学 | Over-neutralization amplifier structure with series lossy embedded network |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5994891A (en) * | 1994-09-26 | 1999-11-30 | The Boeing Company | Electrically small, wideband, high dynamic range antenna having a serial array of optical modulators |
| US6288609B1 (en) * | 2000-02-29 | 2001-09-11 | Motorola, Inc. | Gain controllable low noise amplifier with automatic linearity enhancement and method of doing same |
-
2004
- 2004-09-14 CN CNB200410074736XA patent/CN100428625C/en not_active Expired - Fee Related
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102751962A (en) * | 2012-07-13 | 2012-10-24 | 哈尔滨工程大学 | Broadband active matching method and matching circuit for electronically small receiving antenna based on negative impedance conversion |
| CN103117711A (en) * | 2013-01-29 | 2013-05-22 | 天津大学 | Monolithic integrated radio frequency high-gain low-noise amplifier |
| CN103117711B (en) * | 2013-01-29 | 2015-05-20 | 天津大学 | Monolithic integrated radio frequency high-gain low-noise amplifier |
| CN104113288A (en) * | 2013-04-22 | 2014-10-22 | 中国科学技术大学 | Low-temperature low-noise amplifier |
| CN104883138A (en) * | 2015-06-23 | 2015-09-02 | 中国科学技术大学 | Broadband low-noise amplifier double used in indoor temperature and extremely low temperature |
| CN104883138B (en) * | 2015-06-23 | 2018-01-30 | 中国科学技术大学 | The dual-purpose broadband low-noise amplifier of a kind of room temperature, extremely low temperature |
| CN114024514A (en) * | 2021-10-25 | 2022-02-08 | 电子科技大学 | Over-neutralization amplifier structure with series lossy embedded network |
| CN114024514B (en) * | 2021-10-25 | 2023-10-24 | 电子科技大学 | Over-neutralization amplifier structure with series lossy embedded network |
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| Publication number | Publication date |
|---|---|
| CN100428625C (en) | 2008-10-22 |
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| C14 | Grant of patent or utility model | ||
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Granted publication date: 20081022 Termination date: 20200914 |