CN1559981A - Composite material of glass ceramics cosintered by low temp - Google Patents
Composite material of glass ceramics cosintered by low temp Download PDFInfo
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- CN1559981A CN1559981A CNA2004100045047A CN200410004504A CN1559981A CN 1559981 A CN1559981 A CN 1559981A CN A2004100045047 A CNA2004100045047 A CN A2004100045047A CN 200410004504 A CN200410004504 A CN 200410004504A CN 1559981 A CN1559981 A CN 1559981A
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- glass
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- 239000002241 glass-ceramic Substances 0.000 title abstract description 5
- 239000002131 composite material Substances 0.000 title description 3
- 239000000463 material Substances 0.000 claims abstract description 25
- 230000003750 conditioning effect Effects 0.000 claims description 13
- 239000006112 glass ceramic composition Substances 0.000 claims description 10
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 6
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Inorganic materials O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 claims description 2
- YEAUATLBSVJFOY-UHFFFAOYSA-N tetraantimony hexaoxide Chemical compound O1[Sb](O2)O[Sb]3O[Sb]1O[Sb]2O3 YEAUATLBSVJFOY-UHFFFAOYSA-N 0.000 claims description 2
- 238000005245 sintering Methods 0.000 abstract description 15
- 239000003795 chemical substances by application Substances 0.000 abstract description 13
- 229910008332 Si-Ti Inorganic materials 0.000 abstract description 3
- 229910006749 Si—Ti Inorganic materials 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 15
- 239000011521 glass Substances 0.000 description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 8
- 150000001875 compounds Chemical class 0.000 description 8
- 229910052709 silver Inorganic materials 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 238000005516 engineering process Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 7
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- 239000012298 atmosphere Substances 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000010304 firing Methods 0.000 description 5
- 230000001590 oxidative effect Effects 0.000 description 5
- 230000002829 reductive effect Effects 0.000 description 5
- 238000000498 ball milling Methods 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- 238000005056 compaction Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 239000012467 final product Substances 0.000 description 3
- 238000005469 granulation Methods 0.000 description 3
- 230000003179 granulation Effects 0.000 description 3
- 238000000227 grinding Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011056 performance test Methods 0.000 description 3
- 229910052573 porcelain Inorganic materials 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000002791 soaking Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 2
- 229910002113 barium titanate Inorganic materials 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000032798 delamination Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000009766 low-temperature sintering Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000009740 moulding (composite fabrication) Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/066—Glass compositions containing silica with less than 40% silica by weight containing boron containing zinc
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/068—Glass compositions containing silica with less than 40% silica by weight containing boron containing rare earths
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/089—Glass compositions containing silica with 40% to 90% silica, by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/095—Glass compositions containing silica with 40% to 90% silica, by weight containing rare earths
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/076—Glass compositions containing silica with 40% to 90% silica, by weight
- C03C3/097—Glass compositions containing silica with 40% to 90% silica, by weight containing phosphorus, niobium or tantalum
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Organic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Compositions Of Oxide Ceramics (AREA)
- Inorganic Insulating Materials (AREA)
Abstract
The invention is a low-temperature cofired glass-ceramic combined material, based on Ba-B-Si-Ti system, adding regulating agent to reduce the sintering temperature of material to under 950 deg.C, and obtaining the glass-ceramic combined material with a dielectric constant between 4 and 50 (1GHz) and dielectric loss coefficient below 0.01. The combined material has the components in weight ratio as follows: BaO 10-30wt%, TiO2 20-60wt%, B2O3 6-10wt%, SiO2 5-50wt% and regulating agent 2-15wt%, and applies to make multilayer electronic parts, such as microwave resonators, filters, sheet inductors, capacitors, etc.
Description
Technical field
The invention belongs to electronic material manufacturing technology field.Be particularly related to a kind of low temperature co-fired glass-ceramic composition material.
Background technology
In recent years, the demand for development high-speed data of information technology and high current density transmission, electronic circuit develops to direction microminiaturized, integrated and high frequencyization day by day.This just to electronic component proposed that size is small, the requirement of high frequency, high reliability, cheap and high integration.
LTCC (Low Temperature Co-fired Ceramic) is the type material by Hughes Electronics's exploitation in nineteen eighty-two, and it adopts thick film technology, according to the structure that designs in advance, with disposable burning till such as electrode materials, substrate, electron devices.It is the technology that is used to realize high integration, high-performance electronic encapsulation.LTCC is widely used in the design of multilayer chiop line module.It all shows tempting glamour in wiring live width and distance between centers of tracks, low resistance metallization, the diversity of design and good aspects such as high frequency performance except the advantage aspect cost and integrated encapsulation.
According to the difference of batching, the specific inductivity of LTCC material can change within a large range, has increased the handiness of line design.For example relative permittivity is the design that 3.8 substrate is applicable to high-speed digital circuit; Relative permittivity is the design that 6～80 substrate can be finished HF link well; And, capacitive device is integrated in the multilayered structure up to the substrate of 20000 relative permittivitys.The height of passive device is integrated, has reduced the quantity of surface mount component, has improved wiring density; Reduced the number of lead-in wire connection, improved the reliability of circuit with solder joint.
The dielectric characteristics that the LTCC material plays a crucial role to microwave circuit performance is dielectric loss, specific inductivity, insulation resistance and dielectric strength.Low-loss needs for transmitting and receiving signal, and low-k is handled very important to high speed signal.Simultaneously, high insulation resistance and dielectric strength also are desired.These characteristics be chemical ingredients, technology and with the interactional function of electro-conductive material.
The low-temperature sintering low-k stupalith that uses can be divided into three major types at present: devitrified glass system; Glass adds compound system, the amorphous glass system of ceramic stopping composition.People have been developed a lot of sintering temperature and lows, low-k system to the focusing in the compound system and devitrified glass that glass adds ceramic stopping composition of research in recent years.
It generally is the glass reticulattion that is made of boron and silicon that glass adds ceramic systems, and the formation thing of these glass adds the reticulattion that the oxide-based element of reductive can be rebuild glass that is difficult to of unit price or two valency alkalescence.Owing to adopt the medium that is changeed crystal form by vitreous state, in the ceramic sintering process, conductor such as silver, copper and influencing each other of medium alleviate greatly; Therefore exploitation can be lower than the mixture of firing under the low melting point temperatures such as silver, copper by vitreous state commentaries on classics crystal form, and this is the essential characteristic of LTCC.Because the glass-ceramic tissue of firing has the structure that no porous links, avoided the silver-colored conductor that waits to infiltrate the glass-ceramic tissue in addition.
Many LTCC are based on preparation on the borosilicate glass basis, and the specific inductivity of these LTCC is generally lower; And have higher sintering temperature and specific inductivity based on the Solid solution of barium titanate ceramics.If,, can obtain the glass-ceramic composition material that dielectric properties are good, sintering temperature is lower by adding suitable conditioning agent with borosilicate glass and barium titanate based ceramic combination; This is one of the thinking that instructs of the present invention.Usually, laminated ceramic electronic component contains multiple substrate material, and these materials not only specific inductivity height are different, and physics, chemical compatibility also differs bigger, and therefore the thermal expansivity difference causes delamination, distortion etc. in sintering process because between the material.If but adopt same system is main material, just cause the dielectric properties difference owing to proportion of composing is different, physics between these material systems, chemical compatibility are good, thus lamination to burn the back altogether combinable fine, fundamentally eliminated dissimilar materials and burnt unmatched problem altogether.The present invention produces under the guidance of above-mentioned two thinkings.
Summary of the invention
The purpose of this invention is to provide glass ceramic material based on Ba-B one Si-Ti system, by adding conditioning agent, the sintering temperature of material is reduced to below 950 ℃, and obtained specific inductivity asking at 4-50 (1GHz), dielectric loss coefficient is characterized in that at a kind of low temperature co-fired glass-ceramic composition material below 0.01: its each component is by weight composed as follows:
BaO： 10-30wt％，
TiO
2：?20-60wt％，
B
2O
3：6-10wt％，
SiO
2： 5-50wt％；
Conditioning agent 2-15wt%.
Described conditioning agent comprises MnO
2, ZrO
2, TeO
2, CeO
2, CuO, ZnO, P
2O
5, Nb
2O
5, V
2O
5, La
2O
3, Sb2O3 or As
2O
3In one or more.
The LTCC that provides is provided, has the following advantages:
(1) sintering temperature is low, and according to the difference of forming proportioning, sintering temperature is between 750-950 ℃, and sintering atmosphere is an oxidizing atmosphere, and pressure condition is a normal pressure;
(2) specific inductivity can be regulated between 4-50 (1GHz), and dielectric loss coefficient is below 0.01; The specific inductivity of glass-ceramic composition material, thermal expansivity etc. can change by adding conditioning agent or adjusting the method for forming, satisfying on the basis of dielectric properties, make the thermal expansivity of different composition materials approaching as far as possible, reach disposable purpose of burning till;
(3) preparation technology is simple, cost is low, do not have toxic side effect, does not need to fire in advance, fusion, directly can use behind the ball mill mixing.
(4) can be used for preparing electron devices such as the ceramic substrate that is applied to high frequency circuit, integrability, resonator, wave filter, chip inductor, electric capacity and electronic package material etc.
Embodiment
The invention provides glass ceramic material based on Ba-B one Si-Ti system, by adding conditioning agent, the sintering temperature of material is reduced to below 950 ℃, and obtained specific inductivity between 4-50 (1GHz), dielectric loss coefficient is characterized in that at the glass-ceramic composition material below 0.01: it is composed as follows by each components by weight:
BaO： 10-30wt％，
TiO
2：?20-60wt％，
B
2O
3：6-10wt％，
SiO
2： 5-50wt％；
Conditioning agent 2-15wt%.
Only lifting following embodiment is further specified the present invention.
Embodiment 1: as follows by weight each component:
BaO： 28wt％，
TiO
2：?20wt％，
B
2O
3：8wt％，
SiO
2：?42wt％；
Conditioning agent MnO
2: 2wt%
Above-mentioned compound is placed ball grinder, add the ethanol 1.5-2.5 of compound gross weight (be about doubly), dry in baking oven after ball milling 12-24 hour, grinding is sieved; The powder of gained is added an amount of binding agent granulation, and make the base sheet through dry-pressing and cold isostatic compaction, burn till under 900 ℃, oxidizing atmosphere, soaking time is to get final product in 3 hours; With the ceramics behind the sintering by silver, can carry out electric performance test and be used to prepare ceramic inductance or electrical condenser etc. behind the silver ink firing.By the test to electrical property, the performance of this composition porcelain reaches following index:
Specific inductivity (1GHz) ε
rFor being 5, dielectric loss coefficient tg δ (1GHz) is 0.003.
Embodiment 2: as follows by weight each component:
BaO： 30wt％，
TiO
2：?25wt％，
B
2O
3：8wt％，
SiO
2：?30wt％；
Conditioning agent La
2O
3: 5wt%; ZrO
2: 2wt%
Above-mentioned compound is placed ball grinder, add the ethanol 1.5-2.5 of compound gross weight (be about doubly), dry in baking oven after ball milling 12-24 hour, grinding is sieved; The powder of gained is added an amount of binding agent granulation, and make the base sheet through dry-pressing and cold isostatic compaction, burn till under 900 ℃, oxidizing atmosphere, soaking time is to get final product in 3 hours; With the ceramics behind the sintering by silver, can carry out electric performance test and be used to prepare ceramic inductance or electrical condenser etc. behind the silver ink firing.By the test to electrical property, the performance of this composition porcelain reaches following index:
Specific inductivity (1GHz) ε
rBe 11.0, dielectric loss coefficient tg δ (1GHz) is 0.003.
Embodiment 3: as follows by weight each component:
BaO：?10wt％，
TiO
2：?60wt％，
B
2O
3：8wt％，
SiO
2：?5wt％；
Conditioning agent Sb
2O
3: 2wt%; TeO
2: 13wt%; MnO
2: 2wt%
Above-mentioned compound is placed ball grinder, add the ethanol 1.5-2.5 of compound gross weight (be about doubly), dry in baking oven after ball milling 12-24 hour, grinding is sieved; The powder of gained is added an amount of binding agent granulation, and make the base sheet through dry-pressing and cold isostatic compaction, burn till under 900 ℃, oxidizing atmosphere, soaking time is to get final product in 3 hours; With the ceramics behind the sintering by silver, can carry out electric performance test and be used to prepare ceramic inductance or electrical condenser etc. behind the silver ink firing.By the test to electrical property, the performance of this composition porcelain reaches following index:
Specific inductivity (1GHz) ε
rBe 50.0, dielectric loss coefficient tg δ (1GHz) is 0.004.
Embodiment 4: the composition material in embodiment 1 and 2 is prepared into cast sheet respectively, prints electrode after the film forming, lamination and cutting are burnt till under 900 ℃, oxidizing atmosphere then under proper condition, are incubated and can obtain multilayer device after 3 hours.Because the material composition in example 1 and the example 2 is basic identical, just form the proportioning difference, by adding thermal expansivity conditioning agent La
2O
3, make the thermal expansivity of the two approaching, sintering shrinks and reaches unanimity, and can not cause delamination at the interface, can form complete common burning body.
Claims (2)
1. low temperature co-fired glass-ceramic composition material is characterized in that: its each component is by weight composed as follows:
BaO：10-30wt％，
TiO
2：20-60wt％，
B
2O
3：6-10wt％，
SiO
2：5-50wt％；
Conditioning agent 2-15wt%.
2. according to the described low temperature co-fired glass-ceramic composition material of claim 1, it is characterized in that: described conditioning agent comprises MnO
2, ZrO
2, TeO
2, CeO
2, CuO, ZnO, P
2O
5, Nb
2O
5, V
2O
5, La
2O
3, Sb2O3 or As
2O
3In one or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410004504 CN1267376C (en) | 2004-02-19 | 2004-02-19 | Composite material of glass ceramics cosintered by low temp |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 200410004504 CN1267376C (en) | 2004-02-19 | 2004-02-19 | Composite material of glass ceramics cosintered by low temp |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1559981A true CN1559981A (en) | 2005-01-05 |
| CN1267376C CN1267376C (en) | 2006-08-02 |
Family
ID=34439579
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 200410004504 Expired - Fee Related CN1267376C (en) | 2004-02-19 | 2004-02-19 | Composite material of glass ceramics cosintered by low temp |
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| Country | Link |
|---|---|
| CN (1) | CN1267376C (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304335C (en) * | 2005-06-20 | 2007-03-14 | 清华大学 | Low temp. coburning ceramic and its preparation process |
| CN100351207C (en) * | 2005-09-01 | 2007-11-28 | 陕西科技大学 | Ceramic parts quick making method |
| CN102167578A (en) * | 2010-12-17 | 2011-08-31 | 深圳顺络电子股份有限公司 | Medium and low-dielectric constant low-temperature cofired ceramic material and preparation method thereof |
| CN102584233A (en) * | 2012-01-11 | 2012-07-18 | 深圳顺络电子股份有限公司 | Medium and high dielectric constant low temperature co-fired ceramic material and preparation method thereof |
| CN102603192A (en) * | 2012-02-29 | 2012-07-25 | 深圳光启创新技术有限公司 | Porous glass ceramic material, preparation method and prepared metamaterial substrate |
| CN104485502A (en) * | 2014-12-31 | 2015-04-01 | 清华大学 | Metamaterial harmonic oscillator based on dielectric resonator and application of metamaterial harmonic oscillator |
| CN106927792A (en) * | 2015-12-30 | 2017-07-07 | 上海晶材新材料科技有限公司 | The LTCC ceramic materials and preparation method of the nearly zero-temperature coefficient of low dielectric constant and low loss |
| CN107572827A (en) * | 2017-10-20 | 2018-01-12 | 桂林电子科技大学 | A kind of crystallite glass substrate material and preparation method thereof |
| CN108117262A (en) * | 2018-02-14 | 2018-06-05 | 桂林电子科技大学 | A kind of ultralow Jie low fever microcrystalline glass dielectric material and preparation method thereof |
| CN109734428A (en) * | 2019-03-05 | 2019-05-10 | 武汉理工大学 | A kind of low Jie's low-temperature co-burning ceramic material and preparation method thereof |
| CN111233460A (en) * | 2020-01-19 | 2020-06-05 | 深圳振华富电子有限公司 | Microwave dielectric ceramic material and preparation method thereof |
-
2004
- 2004-02-19 CN CN 200410004504 patent/CN1267376C/en not_active Expired - Fee Related
Cited By (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1304335C (en) * | 2005-06-20 | 2007-03-14 | 清华大学 | Low temp. coburning ceramic and its preparation process |
| CN100351207C (en) * | 2005-09-01 | 2007-11-28 | 陕西科技大学 | Ceramic parts quick making method |
| CN102167578A (en) * | 2010-12-17 | 2011-08-31 | 深圳顺络电子股份有限公司 | Medium and low-dielectric constant low-temperature cofired ceramic material and preparation method thereof |
| CN102167578B (en) * | 2010-12-17 | 2013-10-30 | 深圳顺络电子股份有限公司 | Medium and low-dielectric constant low-temperature cofired ceramic material and preparation method thereof |
| CN102584233A (en) * | 2012-01-11 | 2012-07-18 | 深圳顺络电子股份有限公司 | Medium and high dielectric constant low temperature co-fired ceramic material and preparation method thereof |
| CN102584233B (en) * | 2012-01-11 | 2013-12-25 | 深圳顺络电子股份有限公司 | Medium and high dielectric constant low temperature co-fired ceramic material and preparation method thereof |
| CN102603192A (en) * | 2012-02-29 | 2012-07-25 | 深圳光启创新技术有限公司 | Porous glass ceramic material, preparation method and prepared metamaterial substrate |
| CN102603192B (en) * | 2012-02-29 | 2014-04-16 | 深圳光启创新技术有限公司 | Porous glass ceramic material, preparation method and prepared metamaterial substrate |
| CN104485502A (en) * | 2014-12-31 | 2015-04-01 | 清华大学 | Metamaterial harmonic oscillator based on dielectric resonator and application of metamaterial harmonic oscillator |
| CN106927792A (en) * | 2015-12-30 | 2017-07-07 | 上海晶材新材料科技有限公司 | The LTCC ceramic materials and preparation method of the nearly zero-temperature coefficient of low dielectric constant and low loss |
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| CN107572827A (en) * | 2017-10-20 | 2018-01-12 | 桂林电子科技大学 | A kind of crystallite glass substrate material and preparation method thereof |
| CN107572827B (en) * | 2017-10-20 | 2020-06-02 | 桂林电子科技大学 | Microcrystalline glass substrate material and preparation method thereof |
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| CN108117262B (en) * | 2018-02-14 | 2019-11-12 | 桂林电子科技大学 | A kind of ultralow Jie low fever microcrystalline glass dielectric material and preparation method thereof |
| CN109734428A (en) * | 2019-03-05 | 2019-05-10 | 武汉理工大学 | A kind of low Jie's low-temperature co-burning ceramic material and preparation method thereof |
| CN109734428B (en) * | 2019-03-05 | 2022-03-11 | 武汉理工大学 | Low dielectric low temperature co-fired ceramic material and preparation method thereof |
| CN111233460A (en) * | 2020-01-19 | 2020-06-05 | 深圳振华富电子有限公司 | Microwave dielectric ceramic material and preparation method thereof |
| CN111233460B (en) * | 2020-01-19 | 2022-04-19 | 深圳振华富电子有限公司 | Microwave dielectric ceramic material and preparation method thereof |
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