CN1537349A - 弯曲波导环形激光器 - Google Patents
弯曲波导环形激光器 Download PDFInfo
- Publication number
- CN1537349A CN1537349A CNA028151232A CN02815123A CN1537349A CN 1537349 A CN1537349 A CN 1537349A CN A028151232 A CNA028151232 A CN A028151232A CN 02815123 A CN02815123 A CN 02815123A CN 1537349 A CN1537349 A CN 1537349A
- Authority
- CN
- China
- Prior art keywords
- cavity
- laser
- facet
- sections
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000011218 segmentation Effects 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 22
- 238000005516 engineering process Methods 0.000 claims description 21
- 229920002120 photoresistant polymer Polymers 0.000 claims description 17
- 230000003287 optical effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 208000002925 dental caries Diseases 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 230000005540 biological transmission Effects 0.000 claims description 6
- 238000009413 insulation Methods 0.000 claims description 6
- 230000001902 propagating effect Effects 0.000 claims description 5
- 239000004065 semiconductor Substances 0.000 claims description 5
- 230000000644 propagated effect Effects 0.000 claims description 4
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000004888 barrier function Effects 0.000 claims 2
- 150000002739 metals Chemical class 0.000 claims 1
- 239000010410 layer Substances 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000011960 computer-aided design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003595 spectral effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003139 buffering effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 230000005328 spin glass Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1071—Ring-lasers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/94—Laser ablative material removal
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
- Laser Surgery Devices (AREA)
- Lasers (AREA)
- Optical Integrated Circuits (AREA)
Abstract
Description
Claims (29)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/918,544 US6680961B2 (en) | 2001-08-01 | 2001-08-01 | Curved waveguide ring laser |
US09/918,544 | 2001-08-01 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN1537349A true CN1537349A (zh) | 2004-10-13 |
CN100588055C CN100588055C (zh) | 2010-02-03 |
Family
ID=25440553
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN02815123A Expired - Lifetime CN100588055C (zh) | 2001-08-01 | 2002-06-25 | 弯曲波导环形激光器 |
Country Status (8)
Country | Link |
---|---|
US (2) | US6680961B2 (zh) |
EP (1) | EP1413016B1 (zh) |
JP (1) | JP2005518656A (zh) |
CN (1) | CN100588055C (zh) |
AT (1) | ATE408911T1 (zh) |
AU (1) | AU2002316171A1 (zh) |
DE (1) | DE60228974D1 (zh) |
WO (1) | WO2003012369A2 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105514800A (zh) * | 2010-10-25 | 2016-04-20 | 宾奥普迪克斯股份有限公司 | 紧凑芯片中的长半导体激光腔 |
CN115864134A (zh) * | 2023-02-17 | 2023-03-28 | 福建慧芯激光科技有限公司 | 一种多弯波导dfb激光器芯片 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6680961B2 (en) * | 2001-08-01 | 2004-01-20 | Binoptics, Inc. | Curved waveguide ring laser |
CN100524980C (zh) * | 2003-03-19 | 2009-08-05 | 宾奥普迪克斯股份有限公司 | 高smsr单向蚀刻激光器和低背反射光子器件 |
JP2004287093A (ja) * | 2003-03-20 | 2004-10-14 | Fujitsu Ltd | 光導波路、光デバイスおよび光導波路の製造方法 |
AU2004227359B2 (en) * | 2003-03-31 | 2009-07-30 | Zolo Technologies, Inc. | Method and apparatus for the monitoring and control of combustion |
JP4276182B2 (ja) * | 2003-05-07 | 2009-06-10 | プリマ インドゥストリー ソシエタ ペル アチオニ | ハイブリッド不安定リングレゾネータを備えたレーザ |
EP1680843A4 (en) * | 2003-10-20 | 2009-05-06 | Binoptics Corp | PHOTONIC EQUIPMENT WITH SURFACE EMISSION AND RECEPTION |
US7016587B2 (en) * | 2004-01-20 | 2006-03-21 | Xerox Corporation | Low loss silicon waveguide and method of fabrication thereof |
US8787419B2 (en) * | 2005-02-18 | 2014-07-22 | Binoptics Corporation | High reliability etched-facet photonic devices |
US7502405B2 (en) * | 2005-08-22 | 2009-03-10 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth |
US20070153864A1 (en) * | 2005-11-02 | 2007-07-05 | Luminus Devices, Inc. | Lasers and methods associated with the same |
DE102007053296A1 (de) * | 2007-09-11 | 2009-03-12 | Osram Opto Semiconductors Gmbh | Halbleitervorrichtung mit Winkelreflektor |
US9014230B2 (en) * | 2010-05-19 | 2015-04-21 | The Trustees Of Princeton University | Single-mode quantum cascade lasers having shaped cavities |
US11176962B1 (en) * | 2020-09-10 | 2021-11-16 | Seagate Technology Llc | Heat-assisted magnetic recording laser with a curved facet |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3503005A (en) * | 1967-10-17 | 1970-03-24 | Honeywell Inc | Ring laser which is biased to permit two equal intensity transition frequencies to be generated in opposite directions |
JPS5536902A (en) * | 1978-09-04 | 1980-03-14 | Fujitsu Ltd | Semiconductor laser |
JPS60148185A (ja) * | 1984-01-12 | 1985-08-05 | Sumitomo Electric Ind Ltd | 半導体リングレ−ザジヤイロ |
JPS6393181A (ja) * | 1986-10-07 | 1988-04-23 | Mitsubishi Electric Corp | 半導体レ−ザ |
US4924476A (en) * | 1987-12-04 | 1990-05-08 | Cornell Research Foundation, Inc. | Traveling wave semi-conductor laser |
US4851368A (en) * | 1987-12-04 | 1989-07-25 | Cornell Research Foundation, Inc. | Method of making travelling wave semi-conductor laser |
US5031190A (en) * | 1990-05-17 | 1991-07-09 | Cornell Research Foundation, Inc. | Optical logic using semiconductor ring lasers |
US5132983A (en) * | 1990-05-17 | 1992-07-21 | Cornell Research Foundation, Inc. | Optical logic using semiconductor ring lasers |
DE4135132A1 (de) * | 1991-10-24 | 1993-04-29 | Bodenseewerk Geraetetech | Sensor, der einen nichtreziproken optischen effekt benutzt |
US5327448A (en) * | 1992-03-30 | 1994-07-05 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and techniques for controlled optical confinement |
US5313488A (en) | 1993-02-04 | 1994-05-17 | Honeywell Inc. | Ring laser discharge starting concept |
EP0641049B1 (en) * | 1993-08-31 | 1998-10-28 | Fujitsu Limited | An optical semiconductor device and a method of manufacturing the same |
US5349601A (en) | 1993-09-20 | 1994-09-20 | The United States Of America As Represented By The United States Department Of Energy | Unidirectional ring lasers |
US5790583A (en) * | 1995-05-25 | 1998-08-04 | Northwestern University | Photonic-well Microcavity light emitting devices |
US5878070A (en) * | 1995-05-25 | 1999-03-02 | Northwestern University | Photonic wire microcavity light emitting devices |
US5764681A (en) * | 1995-11-03 | 1998-06-09 | Cornell Research Foundation, Inc. | Directional control method and apparatus for ring laser |
JP3734900B2 (ja) * | 1996-10-31 | 2006-01-11 | 古河電気工業株式会社 | 半導体光導波路構造、光デバイス、及び、それらの製造方法 |
JP3323844B2 (ja) * | 1999-01-18 | 2002-09-09 | キヤノン株式会社 | ジャイロ |
US6385224B1 (en) * | 1999-03-29 | 2002-05-07 | The Whitaker Corporation | Regrown notch laser |
DE60212755T2 (de) * | 2001-04-18 | 2006-11-16 | Nippon Telegraph And Telephone Corp. | Optische Halbleitervorrichtung und Herstellungsverfahren |
US6680961B2 (en) * | 2001-08-01 | 2004-01-20 | Binoptics, Inc. | Curved waveguide ring laser |
-
2001
- 2001-08-01 US US09/918,544 patent/US6680961B2/en not_active Expired - Lifetime
-
2002
- 2002-06-25 EP EP02746451A patent/EP1413016B1/en not_active Expired - Lifetime
- 2002-06-25 WO PCT/US2002/016591 patent/WO2003012369A2/en active Application Filing
- 2002-06-25 AU AU2002316171A patent/AU2002316171A1/en not_active Abandoned
- 2002-06-25 CN CN02815123A patent/CN100588055C/zh not_active Expired - Lifetime
- 2002-06-25 JP JP2003517517A patent/JP2005518656A/ja active Pending
- 2002-06-25 DE DE60228974T patent/DE60228974D1/de not_active Expired - Fee Related
- 2002-06-25 AT AT02746451T patent/ATE408911T1/de not_active IP Right Cessation
- 2002-12-23 US US10/326,084 patent/US6790689B2/en not_active Expired - Lifetime
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN105514800A (zh) * | 2010-10-25 | 2016-04-20 | 宾奥普迪克斯股份有限公司 | 紧凑芯片中的长半导体激光腔 |
CN115864134A (zh) * | 2023-02-17 | 2023-03-28 | 福建慧芯激光科技有限公司 | 一种多弯波导dfb激光器芯片 |
CN115864134B (zh) * | 2023-02-17 | 2023-04-25 | 福建慧芯激光科技有限公司 | 一种多弯波导dfb激光器芯片 |
Also Published As
Publication number | Publication date |
---|---|
US20030123510A1 (en) | 2003-07-03 |
AU2002316171A1 (en) | 2003-02-17 |
CN100588055C (zh) | 2010-02-03 |
JP2005518656A (ja) | 2005-06-23 |
US6790689B2 (en) | 2004-09-14 |
WO2003012369A2 (en) | 2003-02-13 |
US6680961B2 (en) | 2004-01-20 |
ATE408911T1 (de) | 2008-10-15 |
WO2003012369A3 (en) | 2003-10-16 |
US20030026317A1 (en) | 2003-02-06 |
DE60228974D1 (de) | 2008-10-30 |
EP1413016A2 (en) | 2004-04-28 |
EP1413016B1 (en) | 2008-09-17 |
EP1413016A4 (en) | 2005-03-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100588055C (zh) | 弯曲波导环形激光器 | |
KR910002028A (ko) | 반도체 장치 및 그 제조방법 | |
CN106170898A (zh) | 具有光束形状和光束方向修改的激光器 | |
GB2230381A (en) | Superluminescent diode | |
TW541725B (en) | Semiconductor-chip for an optoelectronics and its production method | |
JP2005518656A5 (zh) | ||
JPH07112100B2 (ja) | オプトエレクトロニク半導体装置及びその製造方法 | |
US5396511A (en) | Semiconductor laser apparatus with curved waveguide | |
JPH0846292A (ja) | 半導体レーザ素子及びその製造方法 | |
EP0895323A1 (en) | Distributed feedback laser with loss coupling | |
JPH11214745A (ja) | モード・エキスパンダを有するエレクトロルミネセンス・ダイオード | |
US4837775A (en) | Electro-optic device having a laterally varying region | |
CN114552366B (zh) | 一种soi基单片集成半导体激光器及其制作方法 | |
US20010003529A1 (en) | Semiconductor laser | |
JPS5984577A (ja) | 半導体レ−ザ | |
TWI290402B (en) | Edge-emitting laser with circular beam | |
JPS62282483A (ja) | 半導体レ−ザアレイ装置 | |
JPH0335555A (ja) | 光半導体装置 | |
CN114024209B (zh) | 一种氮化镓基微米线激光器及其制备方法 | |
CN113540979B (zh) | 一种垂直腔面发射激光器 | |
JPS59172286A (ja) | 半導体レ−ザ装置 | |
JP2676771B2 (ja) | 半導体レーザの製造方法および半導体レーザ | |
JPH03268380A (ja) | 半導体レーザ装置 | |
KR200341731Y1 (ko) | 표면 방출형 레이저 다이오드 | |
CN115275779A (zh) | 垂直腔面发射激光器及其形成方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
C56 | Change in the name or address of the patentee | ||
CP02 | Change in the address of a patent holder |
Address after: Massachusetts, USA Patentee after: BINOPTICS Corp. Address before: American New York Patentee before: BINOPTICS Corp. |
|
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: Bin O Purdy Kors LLC Address before: Massachusetts, USA Patentee before: BINOPTICS Corp. |
|
C41 | Transfer of patent application or patent right or utility model | ||
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: MACOM Technology Solutions Holdings Ltd. Address before: Massachusetts, USA Patentee before: M/A-COM technology solutions Holdings Ltd. |
|
TR01 | Transfer of patent right |
Effective date of registration: 20160829 Address after: Massachusetts, USA Patentee after: M/A-COM technology solutions Holdings Ltd. Address before: Massachusetts, USA Patentee before: Bin O Purdy Kors LLC |
|
C56 | Change in the name or address of the patentee | ||
CP01 | Change in the name or title of a patent holder |
Address after: Massachusetts, USA Patentee after: Magnesium Microwave Technology Co.,Ltd. Address before: Massachusetts, USA Patentee before: MACOM Technology Solutions Holdings Ltd. |
|
CX01 | Expiry of patent term | ||
CX01 | Expiry of patent term |
Granted publication date: 20100203 |