DE60228974D1 - Ringlaser mit gekrümmtem wellenleiter - Google Patents

Ringlaser mit gekrümmtem wellenleiter

Info

Publication number
DE60228974D1
DE60228974D1 DE60228974T DE60228974T DE60228974D1 DE 60228974 D1 DE60228974 D1 DE 60228974D1 DE 60228974 T DE60228974 T DE 60228974T DE 60228974 T DE60228974 T DE 60228974T DE 60228974 D1 DE60228974 D1 DE 60228974D1
Authority
DE
Germany
Prior art keywords
straight
sections
cavity
curved
ringlaser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE60228974T
Other languages
English (en)
Inventor
Alex Behfar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BinOptics LLC
Original Assignee
BinOptics LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BinOptics LLC filed Critical BinOptics LLC
Application granted granted Critical
Publication of DE60228974D1 publication Critical patent/DE60228974D1/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1071—Ring-lasers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/94—Laser ablative material removal

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Lasers (AREA)
  • Laser Surgery Devices (AREA)
  • Optical Integrated Circuits (AREA)
DE60228974T 2001-08-01 2002-06-25 Ringlaser mit gekrümmtem wellenleiter Expired - Fee Related DE60228974D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/918,544 US6680961B2 (en) 2001-08-01 2001-08-01 Curved waveguide ring laser
PCT/US2002/016591 WO2003012369A2 (en) 2001-08-01 2002-06-25 Curved waveguide ring laser

Publications (1)

Publication Number Publication Date
DE60228974D1 true DE60228974D1 (de) 2008-10-30

Family

ID=25440553

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60228974T Expired - Fee Related DE60228974D1 (de) 2001-08-01 2002-06-25 Ringlaser mit gekrümmtem wellenleiter

Country Status (8)

Country Link
US (2) US6680961B2 (de)
EP (1) EP1413016B1 (de)
JP (1) JP2005518656A (de)
CN (1) CN100588055C (de)
AT (1) ATE408911T1 (de)
AU (1) AU2002316171A1 (de)
DE (1) DE60228974D1 (de)
WO (1) WO2003012369A2 (de)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6680961B2 (en) * 2001-08-01 2004-01-20 Binoptics, Inc. Curved waveguide ring laser
EP1609221A4 (de) 2003-03-19 2006-05-24 Binoptics Corp Unidirektionale geätzte laser mit hohem smsr und photonische einrichtung mit niedriger rückreflexion
JP2004287093A (ja) * 2003-03-20 2004-10-14 Fujitsu Ltd 光導波路、光デバイスおよび光導波路の製造方法
CN100437165C (zh) * 2003-03-31 2008-11-26 佐勒技术公司 监视与控制燃烧过程的方法与设备
CN100468891C (zh) * 2003-05-07 2009-03-11 普瑞玛工业股份有限公司 具有混合式非稳定环形谐振腔的激光器
JP2007534154A (ja) * 2003-10-20 2007-11-22 ビノプティクス・コーポレイション 表面放射入射光子デバイス
US7016587B2 (en) * 2004-01-20 2006-03-21 Xerox Corporation Low loss silicon waveguide and method of fabrication thereof
CN101160699A (zh) * 2005-02-18 2008-04-09 宾奥普迪克斯股份有限公司 高可靠性的蚀刻小面光子器件
US7502405B2 (en) * 2005-08-22 2009-03-10 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth
US20070153864A1 (en) * 2005-11-02 2007-07-05 Luminus Devices, Inc. Lasers and methods associated with the same
DE102007053296A1 (de) * 2007-09-11 2009-03-12 Osram Opto Semiconductors Gmbh Halbleitervorrichtung mit Winkelreflektor
US9014230B2 (en) * 2010-05-19 2015-04-21 The Trustees Of Princeton University Single-mode quantum cascade lasers having shaped cavities
CN105514800A (zh) * 2010-10-25 2016-04-20 宾奥普迪克斯股份有限公司 紧凑芯片中的长半导体激光腔
US11176962B1 (en) * 2020-09-10 2021-11-16 Seagate Technology Llc Heat-assisted magnetic recording laser with a curved facet
CN115864134B (zh) * 2023-02-17 2023-04-25 福建慧芯激光科技有限公司 一种多弯波导dfb激光器芯片

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3503005A (en) * 1967-10-17 1970-03-24 Honeywell Inc Ring laser which is biased to permit two equal intensity transition frequencies to be generated in opposite directions
JPS5536902A (en) * 1978-09-04 1980-03-14 Fujitsu Ltd Semiconductor laser
JPS60148185A (ja) * 1984-01-12 1985-08-05 Sumitomo Electric Ind Ltd 半導体リングレ−ザジヤイロ
JPS6393181A (ja) * 1986-10-07 1988-04-23 Mitsubishi Electric Corp 半導体レ−ザ
US4924476A (en) * 1987-12-04 1990-05-08 Cornell Research Foundation, Inc. Traveling wave semi-conductor laser
US4851368A (en) * 1987-12-04 1989-07-25 Cornell Research Foundation, Inc. Method of making travelling wave semi-conductor laser
US5031190A (en) * 1990-05-17 1991-07-09 Cornell Research Foundation, Inc. Optical logic using semiconductor ring lasers
US5132983A (en) * 1990-05-17 1992-07-21 Cornell Research Foundation, Inc. Optical logic using semiconductor ring lasers
DE4135132A1 (de) * 1991-10-24 1993-04-29 Bodenseewerk Geraetetech Sensor, der einen nichtreziproken optischen effekt benutzt
US5327448A (en) * 1992-03-30 1994-07-05 The Board Of Trustees Of The University Of Illinois Semiconductor devices and techniques for controlled optical confinement
US5313488A (en) 1993-02-04 1994-05-17 Honeywell Inc. Ring laser discharge starting concept
DE69414208T2 (de) * 1993-08-31 1999-03-25 Fujitsu Ltd Optischer Halbleitervorrichtung und Herstellungsverfahren
US5349601A (en) 1993-09-20 1994-09-20 The United States Of America As Represented By The United States Department Of Energy Unidirectional ring lasers
US5878070A (en) * 1995-05-25 1999-03-02 Northwestern University Photonic wire microcavity light emitting devices
US5790583A (en) * 1995-05-25 1998-08-04 Northwestern University Photonic-well Microcavity light emitting devices
US5764681A (en) * 1995-11-03 1998-06-09 Cornell Research Foundation, Inc. Directional control method and apparatus for ring laser
JP3734900B2 (ja) * 1996-10-31 2006-01-11 古河電気工業株式会社 半導体光導波路構造、光デバイス、及び、それらの製造方法
JP3323844B2 (ja) * 1999-01-18 2002-09-09 キヤノン株式会社 ジャイロ
US6385224B1 (en) * 1999-03-29 2002-05-07 The Whitaker Corporation Regrown notch laser
DE60212755T2 (de) * 2001-04-18 2006-11-16 Nippon Telegraph And Telephone Corp. Optische Halbleitervorrichtung und Herstellungsverfahren
US6680961B2 (en) * 2001-08-01 2004-01-20 Binoptics, Inc. Curved waveguide ring laser

Also Published As

Publication number Publication date
EP1413016B1 (de) 2008-09-17
ATE408911T1 (de) 2008-10-15
WO2003012369A2 (en) 2003-02-13
EP1413016A4 (de) 2005-03-30
EP1413016A2 (de) 2004-04-28
WO2003012369A3 (en) 2003-10-16
US20030026317A1 (en) 2003-02-06
CN100588055C (zh) 2010-02-03
JP2005518656A (ja) 2005-06-23
AU2002316171A1 (en) 2003-02-17
US6680961B2 (en) 2004-01-20
US20030123510A1 (en) 2003-07-03
US6790689B2 (en) 2004-09-14
CN1537349A (zh) 2004-10-13

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee