DE60007959D1 - Quantenkaskadierter Laser mit verteilter Rückkopplung für monomodigen Dauerstrichbetrieb - Google Patents

Quantenkaskadierter Laser mit verteilter Rückkopplung für monomodigen Dauerstrichbetrieb

Info

Publication number
DE60007959D1
DE60007959D1 DE60007959T DE60007959T DE60007959D1 DE 60007959 D1 DE60007959 D1 DE 60007959D1 DE 60007959 T DE60007959 T DE 60007959T DE 60007959 T DE60007959 T DE 60007959T DE 60007959 D1 DE60007959 D1 DE 60007959D1
Authority
DE
Germany
Prior art keywords
continuous wave
distributed feedback
wave operation
mode continuous
cascaded laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60007959T
Other languages
English (en)
Other versions
DE60007959T2 (de
Inventor
Federico Capasso
Alfred Yi Cho
Sung-Nee George Chu
Claire F Gmachl
Ruedeger Koehler
Deborah Lee Sivco
Alessandro Tredicucci
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nokia of America Corp
Original Assignee
Lucent Technologies Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lucent Technologies Inc filed Critical Lucent Technologies Inc
Publication of DE60007959D1 publication Critical patent/DE60007959D1/de
Application granted granted Critical
Publication of DE60007959T2 publication Critical patent/DE60007959T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3401—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers
    • H01S5/3402—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having no PN junction, e.g. unipolar lasers, intersubband lasers, quantum cascade lasers intersubband lasers, e.g. transitions within the conduction or valence bands
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/06216—Pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06209—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in single-section lasers
    • H01S5/0622—Controlling the frequency of the radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1046—Comprising interactions between photons and plasmons, e.g. by a corrugated surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1228—DFB lasers with a complex coupled grating, e.g. gain or loss coupling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1231—Grating growth or overgrowth details

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
DE60007959T 2000-02-25 2000-09-04 Quantenkaskadierter Laser mit verteilter Rückkopplung für monomodigen Dauerstrichbetrieb Expired - Lifetime DE60007959T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US512757 1983-07-11
US09/512,757 US6400744B1 (en) 2000-02-25 2000-02-25 Apparatus comprising a quantum cascade laser having improved distributed feedback for single-mode operation

Publications (2)

Publication Number Publication Date
DE60007959D1 true DE60007959D1 (de) 2004-03-04
DE60007959T2 DE60007959T2 (de) 2004-12-23

Family

ID=24040423

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60007959T Expired - Lifetime DE60007959T2 (de) 2000-02-25 2000-09-04 Quantenkaskadierter Laser mit verteilter Rückkopplung für monomodigen Dauerstrichbetrieb

Country Status (4)

Country Link
US (1) US6400744B1 (de)
EP (1) EP1137133B1 (de)
JP (1) JP3833463B2 (de)
DE (1) DE60007959T2 (de)

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JP4599700B2 (ja) * 2000-10-03 2010-12-15 富士通株式会社 分布帰還型半導体レーザ
US20020097471A1 (en) * 2001-01-22 2002-07-25 Bethea Clyde George Data transmission via direct modulation of a mid-IR laser
US6690699B2 (en) * 2001-03-02 2004-02-10 Lucent Technologies Inc Quantum cascade laser with relaxation-stabilized injection
EP1283571B1 (de) 2001-08-06 2015-01-14 nanoplus GmbH Nanosystems and Technologies Laser mit schwach gekoppeltem Gitterbereich
US7248611B2 (en) * 2001-10-31 2007-07-24 William Marsh Rice University Frequency scanning pulsed laser having synchronously set subthreshold current
US6891870B2 (en) * 2001-11-09 2005-05-10 Corning Lasertron, Inc. Distributed feedback laser for isolator-free operation
US6650675B2 (en) * 2001-11-09 2003-11-18 Corning Lasertron, Incorporated Tunable laser device for avoiding optical mode hops
ATE361565T1 (de) * 2002-03-08 2007-05-15 Nanoplus Gmbh Nanosystems And Ein halbleiterlaserarray mit seitlicher gratingstruktur
GB0217900D0 (en) * 2002-08-02 2002-09-11 Qinetiq Ltd Optoelectronic devices
US6865198B2 (en) 2002-09-27 2005-03-08 Battelle Memorial Institute Cavity ringdown spectroscopy system and method
GB2400233B (en) * 2003-04-01 2006-05-10 Agilent Technologies Inc Distributed feedback laser device
US20050169342A1 (en) * 2003-10-30 2005-08-04 Bookham Technology Plc DFB grating with dopant induced refractive index change
US7301977B2 (en) * 2004-06-10 2007-11-27 Nanoplus Gmbh Tuneable unipolar lasers
EP1617471A1 (de) * 2004-07-13 2006-01-18 Alpes Lasers S.A. Halbleiterlaservorrichtung
US7535656B2 (en) 2005-06-15 2009-05-19 Daylight Solutions, Inc. Lenses, optical sources, and their couplings
US7492806B2 (en) * 2005-06-15 2009-02-17 Daylight Solutions, Inc. Compact mid-IR laser
US20100243891A1 (en) * 2005-06-15 2010-09-30 Timothy Day Compact mid-ir laser
US7369242B2 (en) * 2006-03-17 2008-05-06 Honeywell International Inc. Cavity ring-down spectrometer for semiconductor processing
CN100405681C (zh) * 2006-09-08 2008-07-23 中国科学院上海微系统与信息技术研究所 可调谐分布反馈量子级联激光器的波导与光栅的结构及所述光栅的制备方法
US7424042B2 (en) 2006-09-22 2008-09-09 Daylight Solutions, Inc. Extended tuning in external cavity quantum cascade lasers
US7920608B2 (en) * 2007-03-12 2011-04-05 Daylight Solutions, Inc. Quantum cascade laser suitable for portable applications
FR2916092B1 (fr) * 2007-05-11 2009-08-07 Thales Sa Laser semi-conducteur a contre-reaction repartie forte
US20090028197A1 (en) * 2007-07-25 2009-01-29 Daylight Solutions Inc Fixed wavelength mid infrared laser source with an external cavity
JP5372349B2 (ja) * 2007-08-23 2013-12-18 浜松ホトニクス株式会社 量子カスケードレーザ素子
JP5127430B2 (ja) * 2007-12-25 2013-01-23 キヤノン株式会社 レーザ素子
US7848382B2 (en) 2008-01-17 2010-12-07 Daylight Solutions, Inc. Laser source that generates a plurality of alternative wavelength output beams
KR100928333B1 (ko) 2008-04-28 2009-11-26 재단법인서울대학교산학협력재단 표면 플라즈몬파 변조 방법 및 장치
US8565275B2 (en) 2008-04-29 2013-10-22 Daylight Solutions, Inc. Multi-wavelength high output laser source assembly with precision output beam
US9086375B2 (en) 2008-04-29 2015-07-21 Daylight Solutions, Inc. Laser source with a large spectral range
US8774244B2 (en) 2009-04-21 2014-07-08 Daylight Solutions, Inc. Thermal pointer
JP2011076774A (ja) * 2009-09-29 2011-04-14 Sony Corp 発光装置および表示装置
WO2011156033A2 (en) * 2010-03-15 2011-12-15 Daylight Solutions, Inc. Laser source that generates a rapidly changing output beam
US8335413B2 (en) 2010-05-14 2012-12-18 Daylight Solutions, Inc. Optical switch
US8467430B2 (en) 2010-09-23 2013-06-18 Daylight Solutions, Inc. Continuous wavelength tunable laser source with optimum orientation of grating and gain medium
US9225148B2 (en) 2010-09-23 2015-12-29 Daylight Solutions, Inc. Laser source assembly with thermal control and mechanically stable mounting
US9042688B2 (en) 2011-01-26 2015-05-26 Daylight Solutions, Inc. Multiple port, multiple state optical switch
US9059562B2 (en) 2011-06-23 2015-06-16 Daylight Solutions, Inc. Control system for directing power to a laser assembly
US9093813B2 (en) 2011-10-11 2015-07-28 Daylight Solutions, Inc. Mounting base for a laser system
US9496674B2 (en) 2012-08-28 2016-11-15 Daylight Solutions, Inc. Rapidly tunable laser assembly
US9077137B2 (en) 2013-03-08 2015-07-07 Daylight Solutions, Inc. Laser assembly with package beam pointing registration
US9147995B2 (en) 2013-03-15 2015-09-29 Daylight Solutions, Inc. Rapidly tunable laser source assembly with long stroke grating mover
US9791113B2 (en) 2013-10-23 2017-10-17 Daylight Solutions, Inc. Light source assembly with multiple, disparate light sources
US10208902B2 (en) 2013-10-23 2019-02-19 Daylight Solutions, Inc. Light source assembly with multiple, disparate light sources
US11009217B2 (en) 2013-10-23 2021-05-18 Daylight Solutions, Inc. Light source assembly with multiple, disparate light sources
CN104267503B (zh) * 2014-09-30 2016-08-17 中国科学院半导体研究所 一种改善面发射半导体激光器慢轴远场的金属天线结构
KR102360025B1 (ko) 2014-10-16 2022-02-08 삼성전자주식회사 비정질 탄소원자층의 형성방법 및 비정질 탄소원자층을 포함하는 전자소자
KR102446410B1 (ko) 2015-09-17 2022-09-22 삼성전자주식회사 광전소자 및 이를 포함하는 전자장치
KR102384228B1 (ko) 2015-09-30 2022-04-07 삼성전자주식회사 반도체 레이저 공진기 및 이를 포함하는 반도체 레이저 소자
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Also Published As

Publication number Publication date
JP3833463B2 (ja) 2006-10-11
US6400744B1 (en) 2002-06-04
EP1137133B1 (de) 2004-01-28
EP1137133A1 (de) 2001-09-26
JP2001244559A (ja) 2001-09-07
DE60007959T2 (de) 2004-12-23

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