CN1535466A - 可编程分子装置 - Google Patents

可编程分子装置 Download PDF

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Publication number
CN1535466A
CN1535466A CNA018152295A CN01815229A CN1535466A CN 1535466 A CN1535466 A CN 1535466A CN A018152295 A CNA018152295 A CN A018152295A CN 01815229 A CN01815229 A CN 01815229A CN 1535466 A CN1535466 A CN 1535466A
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CN
China
Prior art keywords
int
molecular
mycell
void
programmable
Prior art date
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Pending
Application number
CNA018152295A
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English (en)
Chinese (zh)
Inventor
ղķ˹��M��������˹
詹姆斯·M·图尔
比尔·范·灿特
и
克里斯托弗·赫斯本德
萨默·赫斯本德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
William Marsh Rice University
Original Assignee
William Marsh Rice University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by William Marsh Rice University filed Critical William Marsh Rice University
Publication of CN1535466A publication Critical patent/CN1535466A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/002—Biomolecular computers, i.e. using biomolecules, proteins, cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Organic Chemistry (AREA)
  • Artificial Intelligence (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Software Systems (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pyridine Compounds (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
CNA018152295A 2000-07-25 2001-07-25 可编程分子装置 Pending CN1535466A (zh)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
US22079000P 2000-07-25 2000-07-25
US60/220,790 2000-07-25
US22364400P 2000-08-08 2000-08-08
US22408000P 2000-08-08 2000-08-08
US60/224,080 2000-08-08
US60/223,644 2000-08-08
US27338301P 2001-03-05 2001-03-05
US60/273,383 2001-03-05

Publications (1)

Publication Number Publication Date
CN1535466A true CN1535466A (zh) 2004-10-06

Family

ID=27499200

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA018152295A Pending CN1535466A (zh) 2000-07-25 2001-07-25 可编程分子装置

Country Status (7)

Country Link
EP (1) EP1319231A4 (https=)
JP (1) JP2004505357A (https=)
KR (1) KR100808966B1 (https=)
CN (1) CN1535466A (https=)
AU (1) AU2001280759A1 (https=)
CA (1) CA2417462A1 (https=)
WO (1) WO2002009117A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102280139A (zh) * 2005-05-09 2011-12-14 南泰若股份有限公司 使用具有可重新编程电阻的纳米管制品的存储器阵列

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7203789B2 (en) * 2004-05-10 2007-04-10 Hewlett-Packard Development Company, L.P. Architecture and methods for computing with reconfigurable resistor crossbars
US11823032B2 (en) 2019-01-23 2023-11-21 International Business Machines Corporation Tuning local conductances of molecular networks: applications to artificial neural networks
EP4040489A1 (en) 2021-01-25 2022-08-10 Samsung Electronics Co., Ltd. Vertical nand flash memory device and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569382B1 (en) 1991-11-07 2003-05-27 Nanogen, Inc. Methods apparatus for the electronic, homogeneous assembly and fabrication of devices
US6259277B1 (en) * 1998-07-27 2001-07-10 University Of South Carolina Use of molecular electrostatic potential to process electronic signals
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6518156B1 (en) 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102280139A (zh) * 2005-05-09 2011-12-14 南泰若股份有限公司 使用具有可重新编程电阻的纳米管制品的存储器阵列
CN102280139B (zh) * 2005-05-09 2014-09-24 南泰若股份有限公司 使用具有可重新编程电阻的纳米管制品的存储器阵列

Also Published As

Publication number Publication date
JP2004505357A (ja) 2004-02-19
EP1319231A4 (en) 2008-11-19
AU2001280759A1 (en) 2002-02-05
EP1319231A1 (en) 2003-06-18
KR20030064373A (ko) 2003-07-31
CA2417462A1 (en) 2002-01-31
WO2002009117A1 (en) 2002-01-31
KR100808966B1 (ko) 2008-03-04

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