JP2004505357A - プログラミング可能な分子デバイス - Google Patents

プログラミング可能な分子デバイス Download PDF

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Publication number
JP2004505357A
JP2004505357A JP2002514735A JP2002514735A JP2004505357A JP 2004505357 A JP2004505357 A JP 2004505357A JP 2002514735 A JP2002514735 A JP 2002514735A JP 2002514735 A JP2002514735 A JP 2002514735A JP 2004505357 A JP2004505357 A JP 2004505357A
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Japan
Prior art keywords
molecular
programmable
nanocell
mmol
group
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Pending
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JP2002514735A
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English (en)
Japanese (ja)
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JP2004505357A5 (https=
Inventor
トゥア，ジェイムズ，エム．
ヴァン　ザント，ビル
ハズバンド，クリストファー
ハズバンド，サマー
Original Assignee
ダブリューエム・マーシュ・ライス・ユニバーシティー
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Publication of JP2004505357A publication Critical patent/JP2004505357A/ja
Publication of JP2004505357A5 publication Critical patent/JP2004505357A5/ja
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06N—COMPUTING ARRANGEMENTS BASED ON SPECIFIC COMPUTATIONAL MODELS
    • G06N3/00—Computing arrangements based on biological models
    • G06N3/002—Biomolecular computers, i.e. using biomolecules, proteins, cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/36—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using diodes, e.g. as threshold elements, i.e. diodes assuming a stable ON-stage when driven above their threshold (S- or N-characteristic)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
    • G11C13/0009—RRAM elements whose operation depends upon chemical change
    • G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
    • G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
    • G11C2213/70—Resistive array aspects
    • G11C2213/81—Array wherein the array conductors, e.g. word lines, bit lines, are made of nanowires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Mathematical Physics (AREA)
  • Computer Hardware Design (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • General Physics & Mathematics (AREA)
  • Biomedical Technology (AREA)
  • Organic Chemistry (AREA)
  • Artificial Intelligence (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Computational Linguistics (AREA)
  • Data Mining & Analysis (AREA)
  • Evolutionary Computation (AREA)
  • General Health & Medical Sciences (AREA)
  • Molecular Biology (AREA)
  • Health & Medical Sciences (AREA)
  • Software Systems (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Pyridine Compounds (AREA)
  • Logic Circuits (AREA)
  • Semiconductor Memories (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
JP2002514735A 2000-07-25 2001-07-25 プログラミング可能な分子デバイス Pending JP2004505357A (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US22079000P 2000-07-25 2000-07-25
US22364400P 2000-08-08 2000-08-08
US22408000P 2000-08-08 2000-08-08
US27338301P 2001-03-05 2001-03-05
PCT/US2001/023333 WO2002009117A1 (en) 2000-07-25 2001-07-25 Programmable molecular device

Publications (2)

Publication Number Publication Date
JP2004505357A true JP2004505357A (ja) 2004-02-19
JP2004505357A5 JP2004505357A5 (https=) 2005-03-03

Family

ID=27499200

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002514735A Pending JP2004505357A (ja) 2000-07-25 2001-07-25 プログラミング可能な分子デバイス

Country Status (7)

Country Link
EP (1) EP1319231A4 (https=)
JP (1) JP2004505357A (https=)
KR (1) KR100808966B1 (https=)
CN (1) CN1535466A (https=)
AU (1) AU2001280759A1 (https=)
CA (1) CA2417462A1 (https=)
WO (1) WO2002009117A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007537678A (ja) * 2004-05-10 2007-12-20 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． ナノメートルスケールの再構成可能な抵抗器クロスバースイッチを用いたコンピューティングのアーキテクチャ及び方法

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7479654B2 (en) * 2005-05-09 2009-01-20 Nantero, Inc. Memory arrays using nanotube articles with reprogrammable resistance
US11823032B2 (en) 2019-01-23 2023-11-21 International Business Machines Corporation Tuning local conductances of molecular networks: applications to artificial neural networks
EP4040489A1 (en) 2021-01-25 2022-08-10 Samsung Electronics Co., Ltd. Vertical nand flash memory device and method of manufacturing the same

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6569382B1 (en) 1991-11-07 2003-05-27 Nanogen, Inc. Methods apparatus for the electronic, homogeneous assembly and fabrication of devices
US6259277B1 (en) * 1998-07-27 2001-07-10 University Of South Carolina Use of molecular electrostatic potential to process electronic signals
US6128214A (en) 1999-03-29 2000-10-03 Hewlett-Packard Molecular wire crossbar memory
US6518156B1 (en) 1999-03-29 2003-02-11 Hewlett-Packard Company Configurable nanoscale crossbar electronic circuits made by electrochemical reaction
US6198655B1 (en) * 1999-12-10 2001-03-06 The Regents Of The University Of California Electrically addressable volatile non-volatile molecular-based switching devices

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007537678A (ja) * 2004-05-10 2007-12-20 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． ナノメートルスケールの再構成可能な抵抗器クロスバースイッチを用いたコンピューティングのアーキテクチャ及び方法

Also Published As

Publication number Publication date
EP1319231A4 (en) 2008-11-19
AU2001280759A1 (en) 2002-02-05
EP1319231A1 (en) 2003-06-18
KR20030064373A (ko) 2003-07-31
CN1535466A (zh) 2004-10-06
CA2417462A1 (en) 2002-01-31
WO2002009117A1 (en) 2002-01-31
KR100808966B1 (ko) 2008-03-04

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