CN1523403A - 显示器件的电极衬底 - Google Patents

显示器件的电极衬底 Download PDF

Info

Publication number
CN1523403A
CN1523403A CNA2004100055443A CN200410005544A CN1523403A CN 1523403 A CN1523403 A CN 1523403A CN A2004100055443 A CNA2004100055443 A CN A2004100055443A CN 200410005544 A CN200410005544 A CN 200410005544A CN 1523403 A CN1523403 A CN 1523403A
Authority
CN
China
Prior art keywords
contact hole
electrode
signal wire
pixel
pixel electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2004100055443A
Other languages
English (en)
Other versions
CN1285963C (zh
Inventor
高桥英幸
ƽ
永山耕平
����һ
古田守
河村真一
二之宫利博
相马功儿
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Display Central Inc
Japan Display Inc
Original Assignee
Toshiba Matsushita Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Matsushita Display Technology Co Ltd filed Critical Toshiba Matsushita Display Technology Co Ltd
Publication of CN1523403A publication Critical patent/CN1523403A/zh
Application granted granted Critical
Publication of CN1285963C publication Critical patent/CN1285963C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

在用于液晶显示器件的电极衬底中，为了通过减少相邻的像素电极之间的短路而提高产量，一个用于将信号线连接到像素薄膜晶体管的漏极的接触孔被设置在和像素电极重叠的位置上。通过这种构型，在两个相邻的像素电极之间的边界不存在接触孔。因此，像素电极不受到保留在接触孔的凹进处的电极材料的影响，从而能防止相邻的像素电极之间的短路。

Description

显示器件的电极衬底
相关申请的交互引用
本申请基于申请于2003年2月17日的申请号为2003-38572的日本专利申请并要求对该申请的优先权；该申请的全部内容通过引用而结合在本文中。
技术领域
本发明涉及显示器件的电极衬底，更具体地涉及用于有源矩阵液晶显示器件的阵列衬底的结构。
背景技术
近年来，有源矩阵液晶显示器件因其高对比度，小串话干扰，高传输显示图象的能力，以及大显示屏幕等而成为平面显示器件的主流。日本专利公开公报No.2002-296619中揭示了一种已知的该类型的液晶显示器件。
图1是显示在常规的液晶显示器件中的像素的示意构型的平面图。同时，图2是取自图1的I-I-I线的剖面图，图3是取自图1的II-II线的剖面图。
液晶显示器件包括一个阵列衬底100和一个相对衬底200，两者相面对设置，液晶层300形成于该两个衬底之间的间隔中。
阵列衬底100包括扫描线102，在同一平面上设置成和扫描线平面平行的附属电容器线130，和设置成通过一个绝缘薄膜160和扫描线102和附属电容器线130平面垂直的信号线101，所有这些部分都形成在一个玻璃衬底105上。
作为像素开关元件的像素TFT 110形成在信号线101和扫描线102的交点上。保护薄膜170形成在该像素TFT 110的表面。还有，彩色滤波器180和像素电极120形成在由信号线101和附属电容器线130包围的一个区域(图1中由黑体线指出的区域)中。像素TFT 110包括一个半导体层111，一个连接到扫描线102的栅极112，一个连接到信号线101的漏极113和一个连接到像素电极120的源极114。
这里，图2中的参考数字140指出了一个连接像素TFT 110的漏极113和像素电极120的外伸线，参考数字150指出了一个栅绝缘薄膜，参考数字190指出了一个形成在像素电极120表面的对准薄膜。偏振板195附接到玻璃衬底105的外面。
相对衬底200包括在玻璃衬底220上顺序形成的相对电极210和调整薄膜230。此外，偏振板240附加到玻璃衬底220的外侧。
如图2和图3所示，用于提供视频信号的信号线101和像素TFT 110的漏极113通过一个接触孔115互相连接，该接触孔115设置成穿透绝缘薄膜160和栅绝缘薄膜150。通常，接触孔115设置在相邻的像素电极120之间，相邻的像素电极的各端由一个在接触孔115的孔径部分处的恒定的尺寸分开。
但是，在上述构型的阵列衬底100中，从接触孔115的底到像素电极120的端部的水平尺寸A可以因形成像素电极时的制造误差而变得短于接触孔115的锥体部分的水平尺寸B。在这种情况下，在形成像素电极120时，诸如ITO的电极材料往往会保留在由图3中的箭头指出的接触孔115的凹进部分。因此，就存在在相邻的像素电极120之间因保留电极材料而发生短路的危险。当相邻的像素电极发生如上所述的短路时，这些像素因为保持原始的写入电压的能力的丧失而最终成为缺陷像素。因此，这样的短路将构成产量下降的问题。
本发明的一个目的就是提供一种显示器件的电极衬底，该种衬底能因减少相邻的像素电极之间的短路而达到高产量地制造液晶显示器件的结果。
发明内容
本发明的第一实施例的显示器件的电极衬底包括设置成互相相交的众多扫描线和众多信号线，设置在各个交点上的众多像素电极，设置在各个交点上的开关元件和设置在和每个像素电极重叠的每个位置上的接触孔，每个开关元件被构型成通过提供到扫描线的栅信号的指令使信号线和像素电极之间导电，从而将提供到信号线的视频信号写入到像素电极，每个接触孔被构型成连接信号线和开关元件的一个电极。
本发明的第二实施例是显示器件的一个电极衬底，其中两个互相相邻又和信号线相交的像素电极中的一个像素电极的一端设置在和接触孔的一部分重叠的位置，该两个像素电极的另一个像素电极的一端与接触孔的孔径边缘相隔一个长于该接触孔的锥体部分的水平尺寸的距离。
本发明的第三实施例的显示器件的电极衬底包括设置成互相相交的众多扫描线和众多信号线，设置在各个交点上的众多像素电极，设置在各个交点上的开关元件和设置在和每个信号线重叠的每个位置上的接触孔，每个开关元件被构型成通过提供到扫描线的栅信号的指令使信号线和像素电极之间导电，从而将提供到信号线的视频信号写入到像素电极，每个接触孔被构型成连接信号线和开关元件的一个电极，其中两个互相相邻又和信号线相交的像素电极的各端各自距接触孔的孔径边缘一个长于该接触孔的锥体部分的水平尺寸的距离。
附图说明
图1是显示常规液晶显示器件中的像素的示意构型的平面图。
图2是显示该示意构型的取自图1的I-I-I线的剖面图。
图3是显示该示意构型的取自图1的II-II线的剖面图。
图4是显示根据第一实施例的液晶显示器件的构型的透视装配图。
图5是显示根据第一实施例的阵列衬底的示意构型的平面图。
图6是显示根据第一实施例的液晶显示器件的每个像素的示意构型的平面图。
图7是显示该示意构型的取自图6的III-III线的剖面图。
图8是显示根据第二实施例的液晶显示器件的每个像素的示意构型的平面图。
图9是显示该示意构型的取自图8的IV-IV线的剖面图。
图10是显示根据第三实施例的液晶显示器件的每个像素的示意构型的平面图。
具体实施方式
第一实施例
现在叙述将根据第一实施例的电极衬底应用到液晶显示器件的情况。这里，在各个附图中，相当于图1到图3中说明的相同的元件由相同的参考数字指示。
如图4所示，该液晶显示器件采用了这样的构型，阵列衬底100和相对衬底200互相相对设置，该两衬底的四周用密封部件400密封，液晶层通过从形成在密封部件400上的入口向其内灌注液晶材料而形成在阵列衬底100和相对衬底200之间的间隔中。在该实施例中，阵列衬底相应于电极衬底。
如图5所示，在阵列衬底100上形成一个构成显示区域的像素区域196，一个用于从外界输入视频信号和控制信号等的OLB区197，一个用于向信号线101提供视频信号的X驱动器(信号线驱动电路)198和一个用于向扫描线102提供栅信号的Y驱动器(扫描线驱动电路)199。
众多信号线101和众多扫描线102在像素区域196中安排成矩阵的形式而互相相交，附属的电容器线130被安排成和扫描线102平行。还有，作为开关元件的像素TFT 110和相应于该像素TFT 110的像素电极设置在每个交点上。图5中由虚线包围的区域相应于一个像素。应注意的是，为了方便，图5中仅画出一个信号线101和一个扫描线102。
作为像素TF-T 110的控制电极的栅极112被连接到每一行的扫描线102，主电极之一的漏极113被连接到每一列的信号线101。还有，另一个主电极的源极114被连接到像素电极120和附属电容器元件131。附属电容器元件131在像素电极120和附属电容器线130之间形成一个附属电容器(Cs)。还有，给出的附属电容器电压从未画出的外部电路提供到附属电容器线130。
同时电气上和像素电极120相反的相对电极设置在相对衬底200的侧面。相反的电压从未画出的外部电路提供到该相对电极。
这里，X驱动器198和Y驱动器199的像素TFT 110的开关元件由多晶硅TFT制成，这些开关元件以相同的工艺形成在阵列衬底100上。
下面叙述上述构型的阵列衬底100上的像素的结构。如图6所示，在该实施例中，用于连接信号线101和像素TFT 110的漏极113的接触孔115设置在和像素电极120a重叠的位置上。
为了更精确，如图7所示，接触孔115设置成穿透绝缘薄膜160和栅绝缘薄膜150，信号线101通过该接触孔115被连接到漏极113。信号线101被置于相应于接触孔115的凹进处。
保护薄膜170形成在信号线101上，彩色滤波器180形成在该薄膜上。像素电极120a形成在该彩色滤波器180上，和由接触孔115凹进的位置重叠。
像素电极120a和像素电极120b之间的间隔由在彩色滤波器180上的平面部分的给定的尺寸分开。应注意的是，为了方便，设置在信号线101两侧的两个相邻的像素电极120被指示为像素电极120a和120b。
下面将简短叙述该液晶显示器件的工作。当栅信号从Y驱动器199提供到每个扫描线102时，连接到相应扫描线102的像素TFT 110导通，其源漏两极导电，以便允许写入视频信号。当视频信号从X驱动器198和栅信号同步提供到每个信号线101时，视频信号在像素TFT 110的源漏两极导电时被写入像素电极120。该视频信号被保留在像素电极120和相对电极210之间作为信号电压。在该期间，液晶层300响应信号电压的数量作出反应，以及对每个像素的未画出的背光的传输数量受到控制。在一个帧的周期内对所有的像素进行这样的操作，从而显示了一个满屏轰击的传输图象。
因此，根据该实施例，在相邻的像素电极120a和120b之间的边界不存在接触孔115，像素电极120a和120b的各端121a和121b以给定的尺寸分开形成在彩色滤波器180的平面部分。以这样的方式，即使像素电极120的位置因形成像素电极时的制造误差发生改变，也可以防止相邻的像素电极因电极材料保留在接触孔115的凹进处而构成短路。
第二实施例
如图8所示，在该实施例中，接触孔115的一部分被设置成和像素电极120a的端部重叠。图9显示了形成像素电极120a的端部121a以达到接触孔115的凹进处的底部的实例。但是，也可能形成像素电极120a的端部121a以达到锥体部分。同时，假设接触孔115的锥体部分的水平尺寸为C，相邻的像素电极120b的端部121b形成在离开接触孔115的孔径边缘达不小于尺寸C的尺寸D的位置。至于其他，相当于图6和图7中说明的元件由相同的参考数字指示，在这里重复的解释将省略。
根据本实施例，像素电极120a的端部121a设置在和一部分接触孔115重叠的位置，像素电极120b的端部121b形成在距接触孔115的孔径边缘达尺寸D的位置。以这样的方式，即使像素电极120的位置因形成像素电极时的制造误差发生改变，也可以防止相邻的像素电极120a和120b的各个端部121a和121b因电极材料保留在接触孔115的底部而构成短路。
还有，根据本发明，和图6比较，接触孔115设置在被改变到信号线101一侧的位置。因此，有可能增加比第一实施例更大的像素电极120a的孔径比。
第三实施例
如图10所示，在该实施例中，和图1相似，接触孔115设置在和信号线101重叠的位置。还有，互相相邻同时和信号线101相交的像素电极120a和120b的各个端部121a’和121b’形成在距接触孔115的孔径边缘达尺寸D(＞C)的位置。这里，虽然图10中未指出尺寸D和C，但这些尺寸指用图9在第二实施例中叙述的同一个尺寸。至于其他，相当于图6中说明的元件由相同的参考数字指示，在这里重复的解释将省略。
根据本实施例，虽然接触孔115形成在和信号线101重叠的位置，但相邻的像素电极120a和120b的各个端部121a’和121b’形成在距接触孔115的孔径边缘达尺寸D的位置。以这样的方式，即使像素电极120的位置因形成像素电极时的制造误差发生改变，也可以防止相邻的像素电极120a和120b的各个端部121a’和121b’因电极材料保留在接触孔115的凹进处而构成短路。
如上所述，根据每个实施例的显示器件的电极衬底，可以在形成像素电极时防止相邻的像素电极的短路，不受到保留在接触孔的凹进处的电极材料的影响。以这样的方式可以减少缺陷像素的发生。
因此，通过将本发明的电极衬底应用到液晶显示器件的阵列衬底上就可以以更高的产量制造液晶显示器件。

Claims (3)

1.一种显示器件的电极衬底包括：
设置成互相相交的众多扫描线和众多信号线；
设置在各个交点上的众多像素电极；
设置在各个交点上的开关元件，每个开关元件都被构型成通过提供到扫描线的栅信号的指令而允许信号线和像素电极之间的导电，从而将提供到信号线的视频信号写入到像素电极；和
设置在和每个像素电极重叠的每个位置上的接触孔，每个接触孔都被构型成连接信号线和开关元件的一个电极。
2.如权利要求1所述的电极衬底，其特征在于，
其中互相相邻同时和信号线相交的两个像素电极中的一个像素电极的一个端部设置在和接触孔的一部分重叠的位置，和
该两个像素电极中的另一个像素电极的一个端部形成在与接触孔的孔径边缘相距一个长于接触孔的锥形部分的水平尺寸的距离。
3.一种显示器件的电极衬底包括：
设置成互相相交的众多扫描线和众多信号线；
设置在各个交点上的众多像素电极；
设置在各个交点上的开关元件，每个开关元件都被构型成通过提供到扫描线的栅信号的指令而允许信号线和像素电极之间的导电，从而将提供到信号线的视频信号写入到像素电极；和
设置在和每个信号线重叠的每个位置上的接触孔，每个接触孔都被构型成连接信号线和开关元件的一个电极，
其中，两个互相相邻同时和信号线相交的像素电极的各端各自与接触孔的孔径边缘相距一个长于该接触孔的锥体部分的水平尺寸的距离。
CNB2004100055443A 2003-02-17 2004-02-17 显示器件的电极衬底 Expired - Fee Related CN1285963C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003038572 2003-02-17
JP2003038572A JP4198485B2 (ja) 2003-02-17 2003-02-17 表示装置用電極基板

Publications (2)

Publication Number Publication Date
CN1523403A true CN1523403A (zh) 2004-08-25
CN1285963C CN1285963C (zh) 2006-11-22

Family

ID=32844459

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2004100055443A Expired - Fee Related CN1285963C (zh) 2003-02-17 2004-02-17 显示器件的电极衬底

Country Status (5)

Country Link
US (1) US7173681B2 (zh)
JP (1) JP4198485B2 (zh)
KR (1) KR100592005B1 (zh)
CN (1) CN1285963C (zh)
TW (1) TWI280433B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100410788C (zh) * 2005-01-19 2008-08-13 友达光电股份有限公司 像素结构
CN100433337C (zh) * 2006-06-23 2008-11-12 北京京东方光电科技有限公司 一种防止dgs的像素电极结构及其制造方法
CN113097272A (zh) * 2021-03-29 2021-07-09 鄂尔多斯市源盛光电有限责任公司 显示背板及其制作方法、显示装置

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101689000B (zh) * 2007-06-27 2012-07-18 夏普株式会社 液晶显示装置
JP5450516B2 (ja) 2011-06-20 2014-03-26 株式会社ジャパンディスプレイ 液晶表示装置
JP2013007769A (ja) 2011-06-22 2013-01-10 Japan Display Central Co Ltd 液晶表示装置
KR20140062286A (ko) 2012-11-14 2014-05-23 삼성디스플레이 주식회사 액정 표시 장치 및 그 제조 방법
WO2019064523A1 (ja) * 2017-09-29 2019-04-04 シャープ株式会社 表示装置および画素回路
CN110554544B (zh) * 2018-06-01 2023-04-14 山力科技有限公司 微开关电子书写板

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3024661B2 (ja) * 1990-11-09 2000-03-21 セイコーエプソン株式会社 アクティブマトリクス基板及びその製造方法
JP3114372B2 (ja) * 1992-07-14 2000-12-04 セイコーエプソン株式会社 アクティブマトリクス表示パネル
JP2776378B2 (ja) * 1996-06-27 1998-07-16 日本電気株式会社 薄膜トランジスタアレイ基板およびその製造方法
TWI250337B (en) * 1998-02-09 2006-03-01 Seiko Epson Corp An electro-optical apparatus and electronic appliances
JP2001083547A (ja) * 1999-07-14 2001-03-30 Sanyo Electric Co Ltd 反射型液晶表示装置
JP3783500B2 (ja) 1999-12-28 2006-06-07 セイコーエプソン株式会社 電気光学装置及び投射型表示装置
JP2002014373A (ja) 2000-06-30 2002-01-18 Toshiba Corp 液晶表示装置
US6542205B2 (en) * 2000-08-04 2003-04-01 Semiconductor Energy Laboratory Co., Ltd. Display device
JP2002091340A (ja) * 2000-09-14 2002-03-27 Toshiba Corp マトリクスアレイ基板
JP4109413B2 (ja) * 2000-12-12 2008-07-02 セイコーエプソン株式会社 基板装置の製造方法
JP2002296619A (ja) 2001-03-30 2002-10-09 Sanyo Electric Co Ltd アクティブマトリクス型表示装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100410788C (zh) * 2005-01-19 2008-08-13 友达光电股份有限公司 像素结构
CN100433337C (zh) * 2006-06-23 2008-11-12 北京京东方光电科技有限公司 一种防止dgs的像素电极结构及其制造方法
CN113097272A (zh) * 2021-03-29 2021-07-09 鄂尔多斯市源盛光电有限责任公司 显示背板及其制作方法、显示装置
CN113097272B (zh) * 2021-03-29 2023-09-22 鄂尔多斯市源盛光电有限责任公司 显示背板及其制作方法、显示装置

Also Published As

Publication number Publication date
KR100592005B1 (ko) 2006-06-22
JP4198485B2 (ja) 2008-12-17
US7173681B2 (en) 2007-02-06
KR20040074931A (ko) 2004-08-26
TWI280433B (en) 2007-05-01
US20040160543A1 (en) 2004-08-19
CN1285963C (zh) 2006-11-22
JP2004246284A (ja) 2004-09-02
TW200426429A (en) 2004-12-01

Similar Documents

Publication Publication Date Title
US8102496B2 (en) Distortion resistant array substrate and touch-sensitive display panel having the same
US8830411B2 (en) Array substrate and method of manufacturing the same
US8169559B2 (en) Array substrate and method of manufacturing the same
CN101452171B (zh) 液晶显示单元及其制造方法
CN1808188A (zh) 滤色器阵列面板和具有其的液晶显示器
CN1873484A (zh) 液晶显示装置
CN1530724A (zh) 四色液晶显示器及用于该液晶显示器的面板
CN1834758A (zh) 共平面开关模式液晶显示器件及其制造方法
CN1991965A (zh) 液晶显示器件及其驱动方法
CN1991461A (zh) 液晶显示器件及其驱动方法
CN1625711A (zh) 液晶显示器
CN1991550A (zh) 液晶显示器件
US11009758B2 (en) Display panel and display device
CN1285963C (zh) 显示器件的电极衬底
CN1932957A (zh) 液晶显示器及其驱动方法
WO2023283976A1 (zh) 显示面板和显示装置
CN1573485A (zh) 面内切换模式液晶显示器件及其制造方法
CN1645202A (zh) 上基板以及具有该上基板的液晶显示装置
CN1197047C (zh) 显示面板和显示设备
CN1621926A (zh) 面内切换模式液晶显示器件
CN100335950C (zh) 安装有芯片的薄膜封装
US20080042956A1 (en) Display panel and method thereof
US20200029437A1 (en) Display device with angular flexible circuit film
CN1719321A (zh) 垂直配向型液晶显示装置
CN1797138A (zh) 液晶显示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
C56 Change in the name or address of the patentee

Owner name: JAPAN DISPLAY MIDDLE INC.

Free format text: FORMER NAME: TOSHIBA MOBILE DISPLAY CO., LTD.

Owner name: TOSHIBA MOBILE DISPLAY CO., LTD.

Free format text: FORMER NAME: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY LTD.

CP01 Change in the name or title of a patent holder

Address after: Saitama Prefecture, Japan

Patentee after: JAPAN DISPLAY Inc.

Address before: Saitama Prefecture, Japan

Patentee before: Toshiba Mobile Display Co.,Ltd.

CP03 Change of name, title or address

Address after: Saitama Prefecture, Japan

Patentee after: Toshiba Mobile Display Co.,Ltd.

Address before: Tokyo, Japan

Patentee before: TOSHIBA MATSUSHITA DISPLAY TECHNOLOGY Co.,Ltd.

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20061122

Termination date: 20210217