CN1520533A - 用于制造二元光掩模坯料的离子束沉积方法 - Google Patents

用于制造二元光掩模坯料的离子束沉积方法 Download PDF

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Publication number
CN1520533A
CN1520533A CNA028123751A CN02812375A CN1520533A CN 1520533 A CN1520533 A CN 1520533A CN A028123751 A CNA028123751 A CN A028123751A CN 02812375 A CN02812375 A CN 02812375A CN 1520533 A CN1520533 A CN 1520533A
Authority
CN
China
Prior art keywords
ion
gas
film
target
deposition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CNA028123751A
Other languages
English (en)
Chinese (zh)
Inventor
彼得・弗朗西斯・卡西亚
彼得·弗朗西斯·卡西亚
・戴乌
劳伦特·戴乌
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
EIDP Inc
Original Assignee
EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of CN1520533A publication Critical patent/CN1520533A/zh
Pending legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
    • C23C14/0052—Bombardment of substrates by reactive ion beams
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/46—Sputtering by ion beam produced by an external ion source
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials
    • G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50

Landscapes

  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Physical Vapour Deposition (AREA)
CNA028123751A 2001-04-19 2002-04-19 用于制造二元光掩模坯料的离子束沉积方法 Pending CN1520533A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US28483101P 2001-04-19 2001-04-19
US60/284,831 2001-04-19

Publications (1)

Publication Number Publication Date
CN1520533A true CN1520533A (zh) 2004-08-11

Family

ID=23091685

Family Applications (1)

Application Number Title Priority Date Filing Date
CNA028123751A Pending CN1520533A (zh) 2001-04-19 2002-04-19 用于制造二元光掩模坯料的离子束沉积方法

Country Status (7)

Country Link
EP (1) EP1386198A2 (ja)
JP (1) JP2004530923A (ja)
KR (1) KR20040030589A (ja)
CN (1) CN1520533A (ja)
AU (1) AU2002252701A1 (ja)
TW (1) TW578206B (ja)
WO (1) WO2002086622A2 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102654730A (zh) * 2005-07-21 2012-09-05 信越化学工业株式会社 光掩模坯、光掩模及其制作方法
CN1900819B (zh) * 2005-07-21 2014-01-22 信越化学工业株式会社 光掩模坯、光掩模及其制作方法
CN103930593A (zh) * 2011-11-11 2014-07-16 威科仪器有限公司 氟基光学薄膜的离子束沉积
CN106222623A (zh) * 2016-08-31 2016-12-14 北京埃德万斯离子束技术研究所股份有限公司 氮化物半导体薄膜及制备方法
CN106282917A (zh) * 2016-08-31 2017-01-04 北京埃德万斯离子束技术研究所股份有限公司 氮化镓半导体薄膜、氮化镓基发光二极管及制备方法

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7671349B2 (en) * 2003-04-08 2010-03-02 Cymer, Inc. Laser produced plasma EUV light source
JP2008203373A (ja) * 2007-02-16 2008-09-04 Clean Surface Gijutsu:Kk ハーフトーンブランクス及びハーフトーンブランクスの製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2744069B2 (ja) * 1989-06-06 1998-04-28 三洋電機株式会社 薄膜の形成方法
GB9519546D0 (en) * 1995-09-25 1995-11-29 Gec Marconi Avionics Holdings Depositing optical coatings
US6274280B1 (en) * 1999-01-14 2001-08-14 E.I. Du Pont De Nemours And Company Multilayer attenuating phase-shift masks

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102654730A (zh) * 2005-07-21 2012-09-05 信越化学工业株式会社 光掩模坯、光掩模及其制作方法
CN1900819B (zh) * 2005-07-21 2014-01-22 信越化学工业株式会社 光掩模坯、光掩模及其制作方法
CN103809369A (zh) * 2005-07-21 2014-05-21 信越化学工业株式会社 光掩模坯、光掩模及其制作方法
CN102654730B (zh) * 2005-07-21 2015-04-22 信越化学工业株式会社 光掩模坯、光掩模及其制作方法
CN103809369B (zh) * 2005-07-21 2017-03-01 信越化学工业株式会社 光掩模坯、光掩模及其制作方法
CN103930593A (zh) * 2011-11-11 2014-07-16 威科仪器有限公司 氟基光学薄膜的离子束沉积
CN106222623A (zh) * 2016-08-31 2016-12-14 北京埃德万斯离子束技术研究所股份有限公司 氮化物半导体薄膜及制备方法
CN106282917A (zh) * 2016-08-31 2017-01-04 北京埃德万斯离子束技术研究所股份有限公司 氮化镓半导体薄膜、氮化镓基发光二极管及制备方法

Also Published As

Publication number Publication date
KR20040030589A (ko) 2004-04-09
AU2002252701A1 (en) 2002-11-05
WO2002086622A2 (en) 2002-10-31
WO2002086622A3 (en) 2003-09-12
TW578206B (en) 2004-03-01
JP2004530923A (ja) 2004-10-07
EP1386198A2 (en) 2004-02-04

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