WO2002086622A2 - Ion-beam deposition process for manufacturing binary photomask blanks - Google Patents
Ion-beam deposition process for manufacturing binary photomask blanks Download PDFInfo
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- WO2002086622A2 WO2002086622A2 PCT/US2002/012542 US0212542W WO02086622A2 WO 2002086622 A2 WO2002086622 A2 WO 2002086622A2 US 0212542 W US0212542 W US 0212542W WO 02086622 A2 WO02086622 A2 WO 02086622A2
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- ion
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3435—Applying energy to the substrate during sputtering
- C23C14/3442—Applying energy to the substrate during sputtering using an ion beam
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
- C23C14/0036—Reactive sputtering
- C23C14/0047—Activation or excitation of reactive gases outside the coating chamber
- C23C14/0052—Bombardment of substrates by reactive ion beams
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/46—Sputtering by ion beam produced by an external ion source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/50—Mask blanks not covered by G03F1/20 - G03F1/34; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/54—Absorbers, e.g. of opaque materials
- G03F1/58—Absorbers, e.g. of opaque materials having two or more different absorber layers, e.g. stacked multilayer absorbers
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
Definitions
- This invention relates to manufacture of binary photomask blanks in photolithography, using the ion-beam deposition technique. These masks can be used with short wavelength (i.e., ⁇ 400 nanometer) light. Additionally, this invention relates to binary photomask blanks with single or multi-layered coating of chromium, molybdenum, tungsten, or tantalum metal and/or its compounds or combinations thereof, on the blanks.
- Microlithography is the process of transferring microscopic circuit patterns or images, usually through a photomask, on to a silicon wafer.
- the image of an electronic circuit is projected, usually with an electromagnetic wave source, through a mask or stencil on to a photosensitive layer or resist applied to the silicon wafer.
- the mask is a layer of "chrome” patterned with these circuit features on a transparent quartz substrate.
- a "chrome” mask transmits imaging radiation through the pattern where "chrome” has been removed. The radiation is blocked in regions where the "chrome” layer is present.
- the electronics industry seeks to extend optical lithography for manufacture of high-density integrated circuits to critical dimensions of less than 100 nanometer (nm).
- resolution for imaging the minimum feature size on the wafer with a particular wavelength of light is limited by the diffraction of light. Therefore, shorter wavelength light, i.e. less than 400 nm are required for imaging finer features.
- Wavelengths targeted for succeeding optical lithography generations include 248 nm (KrF laser wavelength), 193 nm (ArF laser wavelength), and 157 nm (F 2 laser wavelength) and lower.
- the planar magnetron sputtering configuration consists of two parallel plate electrodes: one electrode holds the material to be deposited by sputtering and is called the cathode; while the second electrode or anode is where the substrate to be coated is placed.
- An electric potential either RF or DC, applied between the negative cathode and positive anode in the presence of a gas (e.g., Ar) or mixture of gases (e.g., Ar + O2) creates a plasma discharge (positively ionized gas species and negatively charged electrons) from which ions migrate and are accelerated to the cathode, where they sputter or deposit the target material on to the substrate.
- a gas e.g., Ar
- mixture of gases e.g., Ar + O2
- the presence of a magnetic field in the vicinity of the cathode intensifies the plasma density and consequently the rate of sputter deposition.
- the sputtering target is a metal such as chromium (Cr)
- sputtering with an inert gas such as Ar will produce metallic films of Cr on the substrate.
- the discharge contains reactive gases, such as O , N 2 , CO 2 , or CH 3 , they combine with the target or at the growing film surface to form a thin film of oxide, nitride, carbide, or combination thereof, on the substrate.
- reactive gases such as O , N 2 , CO 2 , or CH 3 , they combine with the target or at the growing film surface to form a thin film of oxide, nitride, carbide, or combination thereof, on the substrate.
- the chemical composition of a binary mask is complex and often, the chemistry is graded or layered through the film thickness.
- a "chrome" binary mask is usually comprised of a chrome oxy-carbo-nitride (CrO x C y N z ) composition that is oxide-rich at the film's top surface and more nitride-rich within the depth of the film.
- the oxide-rich top surface imparts anti-reflection character, and chemically grading the film provides attractive anisotropic wet etch properties, while the nitride-rich composition contributes high optical absorption.
- IBD ion-beam deposition
- the plasma discharge is contained in a separate chamber (ion "gun” or source) and ions are extracted and accelerated by an electric potential impressed on a series of grids at the "exit port” of the gun (ion extraction schemes that are gridless, are also possible).
- the IBD process provides a cleaner process (fewer added particles) at the growing film surface, as compared to planar magnetron sputtering because the plasma, that traps and transports charged particles to the substrate, is not in the proximity of the growing film as in sputtering.
- the need to make blanks with fewer defects is imperative for next generation lithographies where critical circuit features will shrink below 0.1 micron.
- the IBD process operates at a total gas pressure at least ten times lower than traditional magnetron sputtering processes (a typical pressure for IBD is ⁇ 10 -4 Torr.). This results in reduced levels of chemical contamination. For example, a nitride film with minimum or no oxide content can be deposited by this process.
- the IBD process has the ability to independently control the deposition flux and the reactive gas ion flux (current) and energy, which are coupled and not independently controllable in planar magnetron sputtering.
- the capability to grow oxides or nitrides or other chemical compounds with a separate ion gun that bombards the growing film with a low energy, but high flux of oxygen or nitrogen ions is unique to the IBD process and offers precise control of film chemistry and other film properties over a broad process range.
- the angles between the target, the substrate, and the ion guns can be adjusted to optimize for film uniformity and film stress, whereas the geometry in magnetron sputtering is constrained to a parallel plate electrode system.
- This invention concerns an ion-beam deposition process for preparing a binary photo mask blank for lithographic wavelengths less than 400 nanometer, the process comprising depositing at least one layer of a MO x C y N z compound, where M is selected from the group consisting of chromium, molybdenum, tungsten, or tantalum or a combination thereof, on a substrate by ion beam deposition of chromium, molybdenum, tungsten, or tantalum and/or a compound thereof by ions from a group of gases; wherein: x ranges from about 0.00 to about 3.00; y ranges from about 0.00 to about 1.00; and z ranges from about 0.00 to about 2.00.
- this invention concerns a dual ion-beam deposition process for preparing a binary photo mask blank for lithographic wavelengths less than 400 nanometer, the process comprising depositing at least one layer of a MO x C y N z compound, where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof, on a substrate;
- photomask or the term “photomask blank” is used herein in the broadest sense to include both patterned and UN-patterned photomask blanks.
- multilayers is used to refer to photomask blanks comprised of layers of films deposited with distinct boundaries between the two layers or a distinct change in at least one optical property between two regions.
- the layers can be ultra-thin (1-2 monolayers) or much thicker.
- the layering controls optical and etch properties of the photomask blank.
- Optical density of the binary blank is defined as the logarithm of the base of 10 of the ratio of the intensity of the incident light to the intensity of the transmitted light.
- FIG. 2 A typical configuration for a single ion beam deposition process is shown in Figure 2. It is understood that this system is in a chamber with atmospheric gases evacuated by vacuum pumps.
- an energized beam of ions (usually neutralized by an electron source) is directed from a deposition gun (1) to a target material (2) supported by target holder (3) which is sputtered when the bombarding ions have energy above a sputtering threshold energy for that specific material, typically -50 eV.
- the ions from the deposition-gun (1) are usually from an inert gas source such as He, Ne, Ar, Kr, Xe, although reactive gases such as O 2 , N 2 , CO 2 , F 2 , CH , or combinations thereof, can also be used.
- the target material is sputtered and then deposits as a film on the substrate (4), shown with substrate holder (5).
- these ions can combine with target material (2) and the product of this chemical combination is what is sputtered and deposited as a film on the substrate (4).
- the bombarding ions should have energies of several hundred eV - a range of 200 eV to 10 KeV being preferred.
- the ion flux or current should be sufficiently high (> 10 13 ions/cm 2 /s) to maintain practical deposition rates (> 0.1 nm/min).
- the process pressure is about 10" 4 Torr, with a preferred range 10" 3 -1 O -5 Torr.
- the target material can be elemental, such as Cr,, Mo, Ta, W, or it can be multi-component such as Mo x Cr y , or it can be a compound such as CrN.
- the substrate can be positioned at a distance and orientation to the target that optimize film properties such as thickness uniformity, minimum stress, etc.
- the process window or latitude for achieving one film property can be broadened with the dual ion-beam deposition process. Also, one particular film property can be changed independently of other set of properties with the dual ion-beam process.
- Dual Ion-Beam Deposition Process Dual Ion-Beam Deposition Process
- the ion-beam process embodies in photomask manufacture a process with fewer added (defect) particles, greater film density with superior opacity, and superior smoothness with reduced optical scattering, especially critical for lithographic wavelength ⁇ 400 nm.
- the dual ion gun configuration is shown schematically in Figure 1.
- an energetic beam of ions (usually neutralized by an electron source) is directed from a deposition gun (1) to a target (2) which is sputtered when the bombarding ions have energy above a sputtering threshold, typically -50 eV.
- the ions from the deposition-gun are usually from an inert gas source such as He, Ne, Ar, Kr, Xe, although reactive gases such as O 2 , N 2 , CO 2 , F 2 , CH 3 , or combinations thereof, can also be used.
- an inert gas source such as He, Ne, Ar, Kr, Xe
- reactive gases such as O 2 , N 2 , CO 2 , F 2 , CH 3 , or combinations thereof, can also be used.
- these ions are from an inert gas source they sputter the target material (2), e.g. Cr metal, which deposits as a film on the substrate (4).
- a reactive source e.g. oxygen
- they can chemically combine at the target surface and then the product of this chemical combination is what is sputtered and deposited as a film on the substrate.
- energetic ions from a second gun or assist source bombard the substrate.
- ions from the assist gun (6) are selected from the group of reactive gases such as, but not restricted to O 2 , N 2 , CO 2 , F 2 , CH 3 , or combinations thereof, which chemically combine at the substrate with the flux of material sputtered from the target (2). Therefore, if Ar ions from the deposition gun (1 ) are used to sputter a Cr target while oxygen ions from the assist source bombard the growing film, the Cr flux will chemically combine with energetic oxygen ions at the substrate, forming a film of chrome oxide. Commonly, the bombarding ions from the deposition source should have energies of several hundred eV - a range of 200 eV to 10 KeV being preferred.
- the ion flux or current should be sufficiently high (> 10 13 ions/cm 2 /s) to maintain practical deposition rates (> 0.1 nm/min).
- the process pressure is about 10 -4 Torr, with a preferred range 10" 3 -10" 5 Torr.
- the preferred target materials of this invention are elemental Cr, Mo, W, Ta or their compounds.
- the substrate can be positioned at a distance and orientation to the target that optimize film properties such as thickness uniformity, minimum stress, etc.
- the energy of ions from the assist gun (6) is usually lower than the deposition gun (1).
- the assist gun provides an adjustable flux of low energy ions that react with the sputtered atoms at the growing film surface.
- the "assist" ions lower energy typically ⁇ 500 eV is preferred, otherwise the ions may cause undesirable etching or removal of the film. In the extreme case of too high a removal rate, film growth is negligible because the removal rate exceeds the accumulation or growth rate. However, in some cases, higher assist energies may impart beneficial properties to the growing film, such as reduced stress, but the preferred flux of these more energetic ions is usually required to be less than the flux of depositing atoms.
- the gas ion source for the deposition process is preferably selected from the group of inert gases including, but not restricted to He, Ne, Ar, Kr, Xe or combinations thereof, while the gas ion source for the assist bombardment is preferably selected from the group of reactive gases including, but not restricted to O 2 , N 2 , CO , F 2 , CH 3 , or combinations thereof.
- the deposition gas source may also contain a proportion of a reactive gas, especially when formation of a chemical compound at the target is favorable for the process.
- the assist gas source is comprised of a proportion of an inert gas, especially when energetic bombardment of the growing film is favorable for modifying film properties, such as reducing internal film stress.
- the capability to grow oxides or nitrides or other chemical compounds with a separate assist ion gun that bombards the growing film with a low energy, but high flux of oxygen or nitrogen ions is unique to the IBD process and offers precise control of film chemistry and other film properties over a broad process range.
- the angles between the target, the substrate, and the ion guns can be adjusted to optimize for film uniformity and film stress, whereas the geometry in magnetron sputtering is constrained to a parallel plate electrode system.
- any of these deposition operations can be combined to make more complicated structures.
- a CrO x /CrNy layered stack can be made by depositing from elemental Cr target as the film is successively bombarded first by reactive nitrogen ions from the assist gun, followed by bombardment with oxygen ions.
- the layers in a stack alternate from an oxide to a nitride as in CrOx CrNy
- dual ion beam deposition with a single Cr target offers significant advantage over traditional magnetron sputtering techniques.
- the assist source in dual IBD can be rapidly switched between O 2 and N 2 as Cr atoms are deposited
- reactive magnetron sputtering produces an oxide layer on the target surface that must be displaced before forming a nitride- rich surface for sputtering a nitride layer.
- This invention relates to the dual ion beam deposition process for depositing a single layer or multiple layers of chromium, molybdenum, tungsten, or tantalum compounds of the general formula of, MO x C y N z where M is chromium, molybdenum, tungsten, or tantalum on quartz or glass substrate for manufacturing opaque photomask blanks.
- This invention provides a novel deposition technique of single or multiple layer film for photomask blanks for incident wavelengths less than 400 nm.
- the substrate can be any mechanically stable material, which is transparent to the wavelength of incident light used.
- Substrates such as quartz, CaF 2 , and fused silica (glass) are preferred for availability and cost.
- This invention provides dual ion-beam deposition of a single layer with a high optical density or opacity material where the chemistry is graded in the film thickness direction.
- this invention embodies dual ion-beam deposition of single or multiple layers of MO x C y N z , where M is selected from chromium, molybdenum, tungsten, or tantalum or combination thereof , where x ranges from about 0.00 to about 3.00, y ranges from about 0.00 to about 1.00, and z ranges from about 0.00 to 2.00.
- this invention embodies photomask blanks of the MO x C y N z type, where the optical density is more than about two units.
- optical properties index of refraction, "n” and extinction coefficient, "k" were determined from variable angle spectroscopic ellipsometry at three incident angles from 186-800 nm, corresponding to an energy range of 1.5-6.65 eV, in combination with optical reflection and transmission data. From knowledge of the spectral dependence of optical properties, the film thickness , optical transmissivity, and reflectivity can be calculated. See generally, O. S. Heavens, Optical Properties of Thin Solid Films, pp 55-62, Dover, NY, 1991 , incorporated herein by reference. BRIEF DESCRIPTION OF THE DRAWINGS
- Figure 1 Schematic for the dual ion-beam deposition process.
- Figure 2 Representation of single ion beam deposition process for silicon nitride, using silicon (Si) target with sputtered by nitrogen and argon ions from a single ion source or "gun".
- EXAMPLE Opaque "Chrome" Mask CrC x O y N z films, commonly used as a mask in traditional photolithography, were made by dual ion beam deposition in a commercial tool (Veeco IBD-210) from a Cr target. During deposition from the Cr target, the chemistry of the growing film was tailored by bombarding it with low energy ions derived from a gas mixture of CO 2 and N 2 diluted with Ar. The deposition ion beam source was operated at a voltage of 1500 V at a beam current of 200 mA, using 4 seem of Xe. The assist source with 18 seem of N , 4 seem of CO 2 and 2 seem of Ar was operated at 100 V and a current of 150 mA.
- the substrate was a five-inch square quartz plate, 0.09 inch thick.
- the deposition was continued for 15 min and yielded a film about 238 nm thick with an optical density measured at 248 nm of greater than 3, adequate for binary mask application in photolithography.
- a depth profile of the chemical composition of the film obtained by X-ray photoelectron spectroscopy revealed a Cr content of about 60%, a nitrogen content of about 21%, an oxygen content of 19%, and a carbon content of less than 1 %.
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/474,220 US20040106049A1 (en) | 2002-04-19 | 2002-04-19 | Ion-beam deposition process for manufacturing binary photomask blanks |
AU2002252701A AU2002252701A1 (en) | 2001-04-19 | 2002-04-19 | Ion-beam deposition process for manufacturing binary photomask blanks |
JP2002584086A JP2004530923A (en) | 2001-04-19 | 2002-04-19 | Ion beam evaporation method for manufacturing binary photomask blanks |
KR10-2003-7013675A KR20040030589A (en) | 2001-04-19 | 2002-04-19 | Ion-beam deposition process for manufacturing binary photomask blanks |
EP02721791A EP1386198A2 (en) | 2001-04-19 | 2002-04-19 | Ion-beam deposition process for manufacturing binary photomask blanks |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US28483101P | 2001-04-19 | 2001-04-19 | |
US60/284,831 | 2001-04-19 |
Publications (2)
Publication Number | Publication Date |
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WO2002086622A2 true WO2002086622A2 (en) | 2002-10-31 |
WO2002086622A3 WO2002086622A3 (en) | 2003-09-12 |
Family
ID=23091685
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2002/012542 WO2002086622A2 (en) | 2001-04-19 | 2002-04-19 | Ion-beam deposition process for manufacturing binary photomask blanks |
Country Status (7)
Country | Link |
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EP (1) | EP1386198A2 (en) |
JP (1) | JP2004530923A (en) |
KR (1) | KR20040030589A (en) |
CN (1) | CN1520533A (en) |
AU (1) | AU2002252701A1 (en) |
TW (1) | TW578206B (en) |
WO (1) | WO2002086622A2 (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
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US7671349B2 (en) * | 2003-04-08 | 2010-03-02 | Cymer, Inc. | Laser produced plasma EUV light source |
DE602006021102D1 (en) * | 2005-07-21 | 2011-05-19 | Shinetsu Chemical Co | Photomask blank, photomask and their manufacturing process |
JP4933753B2 (en) * | 2005-07-21 | 2012-05-16 | 信越化学工業株式会社 | Phase shift mask blank, phase shift mask, and manufacturing method thereof |
JP2008203373A (en) * | 2007-02-16 | 2008-09-04 | Clean Surface Gijutsu:Kk | Halftone blank and method for manufacturing halftone blank |
CN103930593A (en) * | 2011-11-11 | 2014-07-16 | 威科仪器有限公司 | Ion beam deposition of fluorine-based optical films |
CN106282917B (en) * | 2016-08-31 | 2018-04-27 | 北京埃德万斯离子束技术研究所股份有限公司 | Gallium nitride based light emitting diode and preparation method |
CN106222623A (en) * | 2016-08-31 | 2016-12-14 | 北京埃德万斯离子束技术研究所股份有限公司 | Nitride semiconductor thin film and preparation method |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0310074A (en) * | 1989-06-06 | 1991-01-17 | Sanyo Electric Co Ltd | Formation of thin film |
GB2305440A (en) * | 1995-09-25 | 1997-04-09 | Marconi Gec Ltd | Depositing multiple layer optical coatings using an ion beam source and atom sources |
WO2000042473A1 (en) * | 1999-01-14 | 2000-07-20 | E.I. Du Pont De Nemours And Company | Multilayer attenuating phase-shift masks |
-
2002
- 2002-04-19 EP EP02721791A patent/EP1386198A2/en not_active Withdrawn
- 2002-04-19 JP JP2002584086A patent/JP2004530923A/en active Pending
- 2002-04-19 AU AU2002252701A patent/AU2002252701A1/en not_active Abandoned
- 2002-04-19 WO PCT/US2002/012542 patent/WO2002086622A2/en not_active Application Discontinuation
- 2002-04-19 TW TW091108097A patent/TW578206B/en not_active IP Right Cessation
- 2002-04-19 KR KR10-2003-7013675A patent/KR20040030589A/en not_active Application Discontinuation
- 2002-04-19 CN CNA028123751A patent/CN1520533A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0310074A (en) * | 1989-06-06 | 1991-01-17 | Sanyo Electric Co Ltd | Formation of thin film |
GB2305440A (en) * | 1995-09-25 | 1997-04-09 | Marconi Gec Ltd | Depositing multiple layer optical coatings using an ion beam source and atom sources |
WO2000042473A1 (en) * | 1999-01-14 | 2000-07-20 | E.I. Du Pont De Nemours And Company | Multilayer attenuating phase-shift masks |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 015, no. 126 (C-0817), 27 March 1991 (1991-03-27) & JP 03 010074 A (SANYO ELECTRIC CO LTD), 17 January 1991 (1991-01-17) * |
Also Published As
Publication number | Publication date |
---|---|
TW578206B (en) | 2004-03-01 |
KR20040030589A (en) | 2004-04-09 |
CN1520533A (en) | 2004-08-11 |
AU2002252701A1 (en) | 2002-11-05 |
JP2004530923A (en) | 2004-10-07 |
WO2002086622A3 (en) | 2003-09-12 |
EP1386198A2 (en) | 2004-02-04 |
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