CN1510727A - 防止电子器件氧化的导管 - Google Patents

防止电子器件氧化的导管 Download PDF

Info

Publication number
CN1510727A
CN1510727A CNA2003101184574A CN200310118457A CN1510727A CN 1510727 A CN1510727 A CN 1510727A CN A2003101184574 A CNA2003101184574 A CN A2003101184574A CN 200310118457 A CN200310118457 A CN 200310118457A CN 1510727 A CN1510727 A CN 1510727A
Authority
CN
China
Prior art keywords
conduit
electronic device
electronic devices
prevents oxidation
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CNA2003101184574A
Other languages
English (en)
Other versions
CN1296982C (zh
Inventor
叶玟g
叶玟鋑
胡健炜
段荣
关家胜
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ASMPT Singapore Pte Ltd
Original Assignee
ASM Technology Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ASM Technology Singapore Pte Ltd filed Critical ASM Technology Singapore Pte Ltd
Publication of CN1510727A publication Critical patent/CN1510727A/zh
Application granted granted Critical
Publication of CN1296982C publication Critical patent/CN1296982C/zh
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge clamping, e.g. clamping ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/6776—Continuous loading and unloading into and out of a processing chamber, e.g. transporting belts within processing chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by supporting substrates others than wafers, e.g. chips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67138—Apparatus for wiring semiconductor or solid state device
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/51—Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5136—Separate tool stations for selective or successive operation on work
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/51—Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5136—Separate tool stations for selective or successive operation on work
    • Y10T29/5137—Separate tool stations for selective or successive operation on work including assembling or disassembling station
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/51—Plural diverse manufacturing apparatus including means for metal shaping or assembling
    • Y10T29/5196—Multiple station with conveyor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Packaging Of Annular Or Rod-Shaped Articles, Wearing Apparel, Cassettes, Or The Like (AREA)

Abstract

本发明提供一种防止电子器件氧化的装置，该电子器件例如在半导体封装过程中的半导体基底，其包括：一大体封闭的导管，其具有至少一个规定通道的活动平台，该电子器件可穿越该通道；多个气体输出通道，其引入相对惰性气体进入该导管；传送装置，其用于处理和沿着该提供的导管移动该电子器件；一开口，其沿着部分导管以使得该传送装置和电子器件之间进行处理；驱动装置用于移动该活动平台，该通道的尺寸藉此可调以适合不同的电子器件。

Description

防止电子器件氧化的导管
技术领域
本发明涉及一种在半导体封装生产过程中防止电子器件，如半导体基底氧化的装置和方法。该装置尤其包括基底如铜合金基底的传输导管，其中，惰性气体被导入至该导管以抑制该基底的氧化。
背景技术
半导体基材用做制造特定半导体封装件的基底，在封装过程中的半导体元件或集成电路芯片附着于其上。一般地说，基底是由铁合金制造的。然而，随着对高性能小型化封装的不断需求，更多的活性金属特别是铜合金基底越来越广泛应用于半导体封装。铜合金基底比铁合金基底具有更大诱惑力的原因是由于其具有良好的散热性、良好的加工性和低成本。另一方面，铜合金的缺点是当在高温暴露于氧气中时易于氧化(即，铜与氧反应生成氧化铜)。这种氧化导致氧与基底表面上的原子形成弱的键连接，和脆性层和/或吸附氧化物。这样，氧化导致了半导体封装的可靠性问题。
在典型的半导体封装过程中，当导线键合接触半导体芯片和基底的表面形成导电连接时，氧化问题更加敏锐。在导线键合机(wire-bonding machine)中，基底通常被导入到加热盘(heating plate)上先进行预键合热处理(pre-bond heating)，然后，该基底被传送到键合区进行导线键合，完成导线键合后，需要将该基底传送出该导线键合机器。在完成实际的导线键合之前，该基底通常应预热至一特定温度，这种预键合热处理可在传送到键合位置(bond-site)时通过将该基底放置于加热盘上实现。其后，通常利用超声波转换器产生具有外部压力的机械振动来将导线键合到芯片和基底的表面，而完成实际的导线键合。然而，如果该基底没有防止空气中的氧气，那么，在该传送或实际导线键合过程中产生的热会氧化基底的表面，形成假粘或不可靠键合。
防止基底氧化的工业上的方法是导入大量的惰性气体，一般为氮气到基底。该氮气将减少基底邻近区域中的氧气数量，从而防止基底的氧化。因此，在上述过程中，通过充满氮气的导管将基底传送会更合适。
一种可以采取的方式是建立一种所谓的加热通道(heat-tunnel)，其中，基底通过充满氮气的封闭空间被传送，以便于该基底向空气的暴露尽量减少。但是，更详细的介绍请参阅如图1和图2所述，传统的加热通道存在不足，如图2所示，该加热通道包括：一作业夹具系统(workholder system)、通道盖(tunnel cover)和针定位机(pin indexer)，它们中每一个根据基底的特殊形状或大小来设计。如果使用不同的基底时，包含该加热通道在内的所有部件都必须改变，结果导致生产线的停工时间就更长，而那些变化产生了重复的设计工作和成本。需要技巧来机械地重新设置该系统。并且，由于不同尺寸的定位针(indexingpin)需要使用于基底上不同尺寸的相应定位孔，和考虑定位针移动的通道盖上的槽(slot)需要合适匹配基底的间距距离(pitchingdistance)是有疑问的，所以通过该加热通道采用定位针(indexing pin)来移动基底是不灵活的，
发明内容
因此，本发明的目的是克服现有技术的一些上述不足，提供一种改进的导管，以在半导体制造过程中，特别是关于导线键合过程中防止基底的氧化。
根据本发明的第一方面提供一种防止电子器件氧化的装置，包括：一大体封闭的导管，其具有至少一个规定通道的活动平台，该电子器件可穿越该通道；多个气体输出通道，其能够引入相对惰性气体进入该导管；传送装置，其用于处理和沿着该导管移动该电子器件；一开口，其沿着部分导管以使得该传送装置和电子器件之间进行处理；其中，该装置包含有用于移动该活动平台的驱动装置，该通道的尺寸藉此可调以适合不同的电子器件。
根据本发明的第二方面，提供一种防止电子器件氧化的方法，包括以下步骤：提供一大体封闭的导管，其具有至少一个规定通道的活动平台，该电子器件可穿越该通道；通过多个气体输出通道引入相对惰性气体进入该导管；通过沿着部分导管的开口将传送装置和电子器件进行处理，藉此沿着该导管移动电子器件；其中，通过驱动该活动平台调整该通道的大小，以适合不同尺寸的电子器件。
参阅描述本发明的实施例的附图，来描述本发明是很方便的。附图和相关的描述不能理解成是对本发明的限制，本发明的特点限定在权利要求书中。
附图说明
附图1是现有技术中的加热通道的平面图；
附图2是沿着图1中A-A剖面的该加热通道的截面图；
附图3是根据本发明实施例，包含有用于防止基底氧化的导管的典型导线键合机的不同区域的平面布置示意图；
附图4是根据本发明实施例，在预键合位置中沿着图3中A1-A1剖面的该导管的截面图；
附图5是根据本发明实施例，沿着图3中A2-A2剖面的键合区的截面图；
附图6是在预键合位置中导管内氮气的流向示意图；
附图7是沿着图6中设定为B的端部的该系统的侧视图，其表述了该系统的顶部和底部的导向壁。
具体实施方式
图1是现有技术中的加热通道(heat-tunnel)100的平面图，其可与导线键合机一起使用。一被键合的电子器件或基底102放置于由通道盖(tunnel cover)104覆盖的加热通道中，一芯片(未示)已经附着于该基底102上，该基底102为导线键合准备就绪。当该基底102加热以进行导线键合作业时，该加热通道100减少了该基底102在空气中的暴露。为了沿着该加热通道100移动该基底102，一定位针(indexingpin)106通过该通道盖104上形成的槽108凸伸入该基底102上的孔洞中，当该定位针106移动时，其沿着该加热通道100推动基底102。
在键合位置(bond-site)处的通道盖104上设有开口110(opening)，其和导线键合机的键合销(bond-tip，未示)位置相匹配，在该处完成该基底102的导线键合。
图2是沿着图1中A-A剖面的该加热通道100的截面图；该基底102位于一作业夹具(work holder)112上，该作业夹具通常设计成U形以形成便于该基底102移动通过的凹部(depression)或者通道(tunnel)，当该基底102在该通道中时，其通常以加热方式进行加热以提升其温度，而为导线键合作准备。该通道盖104覆盖于所述的通道，定位针106穿过该通道盖104凸伸以移动或定位(index)该基底102穿越该通道。惰性气体如氮气，被吹入该通道100中，以减少氧气的存在和防止该基底氧化。
图3是根据本发明实施例，包含有用于防止电子器件，如半导体基底16氧化的导管的典型导线键合机的不同区域的平面布置示意图。该系统包含有位于窗口夹具(window clamp)30两侧边的导管盖12、12a，而该窗口夹具30位于该导线键合机的中央附近。该两个导管盖12、12a安装在加热该基底16和为键合作准备的预键合位置(这两个预键合位置使得基底能够从左侧或右侧进入)，而窗口夹具30安装在进行基底16导线键合的键合位置。位于导线键合区31两侧的导管通向或引离该键合区，键合导线在该键合区中附加于该基底16上。为了将该基底16移动穿越该导线键合机的不同区域，使用诸如夹持定位机(clamp indexer)22、22a形式的传送装置取代定位针来夹持和移动该基底16。
图4是根据本发明实施例，在预键合位置中沿着图3中A1-A1剖面的导管的截面图。该基底16位于支撑体(support)或平台(platform)上，其可包含有用于基底16预键合加热的加热盘14。该基底16的一部分位于一凹部内，该凹部形成于该平台的加热盘14的上表面，而该基底16的另一部分通过一开口延伸于该加热盘14和导管封闭体(conduitenclosure)之外，以使其能够通过夹持定位机(clamp indexer)22移动和定位(indexing)，这样基底在空气中的暴露会更大。所示的基底16为Z形基底，但是其他形状的基底也可适用于本发明。当该基底16沿着导管移动通过预键合位置时，该加热盘14在加热区域C中加热该基底16至一期望温度，以便于导线键合。
该加热盘14和平台通过以第一驱动器(first actuator)18形式存在的驱动装置(actuating means)连接于一侧，该第一驱动器是可调整的以调整该加热盘14的位置。该驱动装置在与该加热盘14相对的基底16的一端的平台上，可包含有与该平台相连的第二驱动器(secondactuator)20，该平台此处设有容置该基底16端缘的洞口。该第二驱动器20的位置也是可调整的，值得注意的是，在第一驱动器18和第二驱动器20之间的相对运动使得该导管可容置不同宽度的基底16。因此，如现有技术中所需的制作一新的作业夹具(work holder)来配合不同尺寸的基底16是没有必要的。该加热盘14下面的叠置板体(overlapping plates)24也用来限制氮气流溢出该导管之外。
该导管由一恰好安装在该加热盘14上面的导管盖12所封闭，该导管盖12和该加热盘14共同创造了一大体封闭的通道，以供基底16通过；在该加热盘14和导管盖12之间整齐地形成有一开口(opening)或间隙(gap)，以供该基底16的一部分伸出该导管之外。这样，使得该基底16的端缘能够被夹持定位机(clamp indexer)22所处理(engaged)，这样该夹持定位机22能够沿着该导管移动该基底16，但是，该间隙应该被设计得尽可能小，以限制导管中惰性气体如氮气的逃离。
氮气可通过沿着该导管中的一个或多个表面上分布的气体输出通道引入至该导管，该气体输出通道可以是以形成于该导管盖12中的喷嘴26和形成于该加热盘14中的喷嘴28的形式存在。更好地说，该氮气应在尽可能宽的区域扩展开来，这样例如在键合区域D中的导管盖12和加热盘14之间的开口中包含有喷嘴29，以将氮气引入到和该开口相邻的该基底局部。这对键合区域D中的该基底局部防止氧化而言，是非常重要的。
而且，图4的区域E位于该加热区域C之外，通过在区域E形成有凹陷以避免那一部分基底16和加热盘14在区域E的接触，因此该部分基底16的加热会被减少，从而在区域E中该基底16氧化的暴露会减少。
图5是根据本发明实施例，沿着图3中A2-A2剖面的键合区的截面图；该基底16已沿着导管从预键合位置移动到键合区。在键合区，基底16由窗口夹具30固定就位，氮气可通过形成于窗口夹具30本体中的气体输出通道32被引入，以防止基底16氧化。而且，氮气可从该基底16的底面通过在作业夹具(work holder，未示)中形成的一个或多个气体输出通道被引入。在导线键合过程中，为了进一步从普通空气中保护基底16，在导线夹具(wire clamp)30上方恰好设置有移动盖34，以覆盖键合区域31。为了使键合销(bond tip，未示)可到达该基底16，在移动盖34上形成有足够大小的孔洞供该键合销凸伸穿过。
图6是在预键合位置中导管内氮气的流向示意图，氮气的一些典型流动路径的大体方向如箭头F所示。值得注意的是，氮气在导管中的不同位置被引入，并假设向各个方向运动。假设氮气从暴露区域G和导管设定为B的一端逃离该导管，该暴露区域G安装有夹持定位机22。和B端相对的一端问题较少，因为其和键合区相邻，氮气也可在此处被引入至导管。对以设定为F的X-方向流动的氮气而言，顶部和底部导向壁40、42很重要地阻止氮气在B端逃离，相反，该顶部和底部导向壁40、42使得氮气转向，以致B端获得足够的氮气而防止基底16在该端的氧化。
图7是沿着图6中设定为B的端部的该系统的侧视图，其表述了该系统的顶部和底部的导向壁40、42。该顶部导向壁40从该导管盖12的底面延伸，而该底部导向壁42从该加热盘14的顶面延伸。顶部和底部导向壁40、42的这种设计以便于阻止尽可能多的氮气离开该导管，而且同时为基底16从导管的一侧传送入导管留下空间。
本发明在所具体描述的内容基础上很容易产生变化、修正和补充，可以理解的是所有这些变化、修正和补充都包括在本发明的上述描述的精神和范围内。

Claims (18)

1、一种防止电子器件氧化的装置，包括：
一大体封闭的导管，其具有至少一个规定通道的活动平台，该电子器件可穿越该通道；
多个气体输出通道，其能够引入相对惰性气体进入该导管；
传送装置，其用于处理和沿着该导管移动该电子器件；
一开口，其沿着部分导管以使得该传送装置和电子器件之间进行处理；
其中，该装置包含有用于移动该活动平台的驱动装置，该通道的尺寸藉此可调以适合不同的电子器件。
2、如权利要求1所述的防止电子器件氧化的装置，其中设计该导管以便于电子器件的局部延伸于该导管之外，以使得该传送装置能够处理。
3、如权利要求2所述的防止电子器件氧化的装置，其中该活动平台包含有与之相连的加热盘，从而在位于该导管中的电子器件的加热区内，加热电子器件的局部。
4、如权利要求1所述的防止电子器件氧化的装置，其中该传送装置为定位夹具。
5、如权利要求1所述的防止电子器件氧化的装置，其中，该气体输出通道沿着该大体封闭的导管内的一个或多个表面配置，以引入该惰性气体至该导管。
6、如权利要求5所述的防止电子器件氧化的装置，其中，该装置包含有位于该沿着导管的开口处的气体输出通道，以引入该惰性气体至和该开口相邻的电子器件局部上。
7、如权利要求1所述的防止电子器件氧化的装置，其中，该装置包含有位于该导管一端的导向壁，以在所述导管一端主要阻止惰性气体逃离。
8、如权利要求1所述的防止电子器件氧化的装置，其中，该导管通向或离开将键合导线附加到电子器件上的键合区。
9、如权利要求8所述的防止电子器件氧化的装置，其中，该装置包含有位于键合区的窗口夹具，以在导线键合过程中固定电子器件；该窗口夹具包含有气体输出通道，以在导线键合过程引入惰性气体到由该窗口夹具暴露的电子器件的区域。
10、一种防止电子器件氧化的方法，包括以下步骤：
提供一大体封闭的导管，其具有至少一个规定通道的活动平台，该电子器件可穿越该通道；
通过多个气体输出通道引入相对惰性气体进入该导管；
通过沿着部分导管的开口将传送装置和电子器件进行处理，藉此沿着该导管移动电子器件；
其中，通过驱动该活动平台调整该通道的大小，以适合不同尺寸的电子器件。
11、如权利要求10所述的防止电子器件氧化的方法，其中该方法包含有：将电子器件局部延伸于该导管之外，以使得该传送装置能够处理。
12、如权利要求10所述的防止电子器件氧化的方法，其中该方法包含有：当传送电子器件时，在位于该导管中的电子器件的加热区内加热电子器件局部。
13、如权利要求10所述的防止电子器件氧化的方法，其中该传送装置为定位夹具。
14、如权利要求10所述的防止电子器件氧化的方法，其中，该方法包含有：通过气体输出通道引入该惰性气体至该导管，该气体输出通道沿着该大体封闭的导管内的一个或多个表面配置。
15、如权利要求14所述的防止电子器件氧化的方法，其中，该方法包含有：引入该惰性气体至和该开口相邻的电子器件局部。
16、如权利要求10所述的防止电子器件氧化的方法，其中，该方法包含有：提供一位于该导管端部的导向壁，以在所述导管端部主要阻止惰性气体逃离。
17、如权利要求10所述的防止电子器件氧化的方法，其中，该导管通向或离开将键合导线附加到电子器件上的键合区。
18、如权利要求17所述的防止电子器件氧化的方法，其中，该方法包含有：在键合区夹持基底的一区域，以在导线键合过程中固定电子器件；并且在导线键合过程引入惰性气体到电子器件的暴露区域。
CNB2003101184574A 2002-12-17 2003-12-17 防止电子器件加热时氧化的导管 Expired - Lifetime CN1296982C (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/324,643 2002-12-17
US10/324,643 US7103959B2 (en) 2002-12-17 2002-12-17 Conduit for preventing oxidation of a electronic device

Publications (2)

Publication Number Publication Date
CN1510727A true CN1510727A (zh) 2004-07-07
CN1296982C CN1296982C (zh) 2007-01-24

Family

ID=32507324

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2003101184574A Expired - Lifetime CN1296982C (zh) 2002-12-17 2003-12-17 防止电子器件加热时氧化的导管

Country Status (3)

Country Link
US (1) US7103959B2 (zh)
CN (1) CN1296982C (zh)
SG (1) SG148882A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114373704A (zh) * 2022-01-17 2022-04-19 揭阳市科和电子实业有限公司 半导体三极管引线支架氧化保护装置

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7614538B2 (en) * 2006-05-15 2009-11-10 Kulicke And Soffa Industries, Inc. Device clamp for reducing oxidation in wire bonding
SG146606A1 (en) * 2007-05-04 2008-10-30 Asm Tech Singapore Pte Ltd Temperature control of a bonding stage
US7578423B1 (en) * 2008-06-06 2009-08-25 Asm Technology Singapore Pte Ltd. Assembly for reducing oxidation of semiconductor devices
US8066170B2 (en) * 2008-06-10 2011-11-29 Kulicke And Soffa Industries, Inc. Gas delivery system for reducing oxidation in wire bonding operations

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6245189B1 (en) * 1994-12-05 2001-06-12 Nordson Corporation High Throughput plasma treatment system
US5609290A (en) * 1995-04-20 1997-03-11 The University Of North Carolina At Charlotte Fluxless soldering method
US5899737A (en) * 1996-09-20 1999-05-04 Lsi Logic Corporation Fluxless solder ball attachment process
KR100339020B1 (ko) * 1999-08-02 2002-05-31 윤종용 반도체칩 패키징 시스템 및 이를 이용한 반도체칩 패키징 방법
US6186392B1 (en) * 2000-01-21 2001-02-13 Micron Technology, Inc. Method and system for forming contacts on a semiconductor component by aligning and attaching ferromagnetic balls

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114373704A (zh) * 2022-01-17 2022-04-19 揭阳市科和电子实业有限公司 半导体三极管引线支架氧化保护装置
CN114373704B (zh) * 2022-01-17 2022-07-05 揭阳市科和电子实业有限公司 半导体三极管引线支架氧化保护装置

Also Published As

Publication number Publication date
US7103959B2 (en) 2006-09-12
SG148882A1 (en) 2009-01-29
US20040115959A1 (en) 2004-06-17
CN1296982C (zh) 2007-01-24

Similar Documents

Publication Publication Date Title
US8365385B2 (en) Processing apparatus and method
US10529656B2 (en) Semiconductor device
EP1126507B1 (en) Apparatus for positioning a thin plate
CN1649085A (zh) 用于减少电子器件氧化的系统
US6196445B1 (en) Method for positioning the bond head in a wire bonding machine
CN1296982C (zh) 防止电子器件加热时氧化的导管
US6866182B2 (en) Apparatus and method to prevent oxidation of electronic devices
CN111727494A (zh) 包含还原气体的使用的将半导体元件焊接到基板的方法及相关焊接机
US20080314964A1 (en) Wire bonding apparatus and process
US20030164394A1 (en) Installation device
KR101128536B1 (ko) 반도체 장착 장치
JP2020178026A (ja) 組立冶具セットおよび半導体モジュールの製造方法
US7578423B1 (en) Assembly for reducing oxidation of semiconductor devices
EP4057333A2 (en) Method of bonding of semiconductor elements to substrates
TWI237297B (en) Apparatus for mounting semiconductors
CN116190281A (zh) 一种半导体固晶机工艺处理运输轨道
JP3475801B2 (ja) 電子部品のボンディング装置
US20030190574A1 (en) Apparatus for transporting substrates in an oven
US20220139724A1 (en) Semiconductor device and a method of manufacturing a semiconductor device
US4975050A (en) Workpiece heating and feeding device
JPH02273949A (ja) テープボンデイング装置
JP2004074359A (ja) Ｘｙテーブル
JP2519829B2 (ja) 加熱装置およびそれを用いた実装方法
JP4128321B2 (ja) バンプボンディング装置
WO2003015158A1 (en) Die bonder and method for detecting misaligned workpieces

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CX01 Expiry of patent term

Granted publication date: 20070124

CX01 Expiry of patent term