CN1497749A - Magnetic inductor and its manufacturing method - Google Patents
Magnetic inductor and its manufacturing method Download PDFInfo
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- CN1497749A CN1497749A CNA2003101198613A CN200310119861A CN1497749A CN 1497749 A CN1497749 A CN 1497749A CN A2003101198613 A CNA2003101198613 A CN A2003101198613A CN 200310119861 A CN200310119861 A CN 200310119861A CN 1497749 A CN1497749 A CN 1497749A
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Abstract
A magnetic sensor comprises magnetoresistive elements (31) and permanent magnet films (32), which are combined together to form GMR elements (11-14, 21-24) formed on a quartz substrate (2) having a square shape, wherein the permanent magnet films are paired and connected to both ends of the magnetoresistive elements, so that an X-axis magnetic sensor and a Y-axis magnetic sensor are realized by adequately arranging the GMR elements relative to the four sides of the quartz substrate. Herein, the magnetization direction of the pinned layer (PD) of the magnetoresistive element forms a prescribed angle of 45 DEG relative to the longitudinal direction of the magnetoresistive element or relative to the magnetization direction of the permanent magnet film. Thus, it is possible to reliably suppress offset variations of bridge connections of the GMR elements even when an intense magnetic field is applied; and it is therefore possible to noticeably improve the resistant characteristics to an intense magnetic field.
Description
Technical field
The present invention relates to use the magnetic inductor of magnetoresistive element such as giant magnetoresistance (GMR) element.The invention still further relates to the manufacture method that is used to make magnetic inductor.
Background technology
Usually, use the dissimilar magnetic inductors of magnetoresistive element such as giant magnetoresistance (GMR) element developed gradually and use in practice.
The exemplary of GMR element comprises that the magnetization is pinned at pinned (pinned) layer of prescribed direction, and the free layer that changes according to the external magnetic field of the direction of magnetization.That is, when applying the external magnetic field, the relativeness of GMR element responds direction of magnetization between nailed layer and free layer and present impedance; Therefore, just can detect the external magnetic field by the impedance of measuring the GMR element.
In order to detect little external magnetic field with high precision, just need above-mentioned magnetic inductor to act under the condition of magnetic inductor in no external magnetic field, can stablize the direction of magnetization of its each magnetized spot of free layer of maintenance and the coupling of prescribed direction (hereinafter, being called inceptive direction).
Usually, the film free layer is that rectangle constitutes in plane graph, and the long limit of rectangle (for example major axis or vertically) direction is complementary with above-mentioned inceptive direction, thereby sets up the shape anisotropy that the wherein direction of magnetization and longitudinal direction are mated.By the application of shape anisotropy, the direction of magnetization of free layer magnetized spot is adjusted to the direction with the inceptive direction coupling.After disappearing when the external magnetic field, also can be for a long time recover and maintain on the inceptive direction the direction of magnetization of free layer magnetized spot is stable, the regulation magnetic field on the inceptive direction all is set at along the longitudinal direction free layer two ends with the corresponding magnetic bias film of permanent magnet, so that can be applied to free layer by magnetic bias film.
In the magneto-resistance effect element (being magnetoresistive element) of AMR type, must apply bias field to increase susceptibility.For example, in order bias field to be uniformly applied to four magnetoresistive elements, the predetermined angular that these magnetoresistive elements will be at 45 with respect to substrate tilting.Magnetoresistive element is disclosed among the Japanese Unexamined Patent Publication No Hei5-126577 with respect to the example of the magnetic inductor of substrate tilting (sees [0016] section and Fig. 5 (a)).
When having big relatively and less than the magnetic force of the coercive force of magnetic bias film, and its direction of magnetization external magnetic field opposite with inceptive direction be when putting on known magnetic inductor, and the direction of magnetization of each magnetized spot of free layer all changes; Thereafter, when the external magnetic field disappears, each magnetized spot of layer that just can't affranchise, and can't mate with inceptive direction.This has just reduced the accuracy of detection that the magnetic inductor induction puts on this magnetic field.
The magnetoresistive element that the two or more wherein nailed layer direction of magnetizations of formation intersect each other on a little substrate is just very difficult; Therefore, also do not develop and produce single chip with this type of configuration.That is, can't reduce the size of known magnetic inductor, simultaneously because the restriction of the nailed layer direction of magnetization is difficult to enlarge its range of application.
In order to address the above problem, can use GMR element exploitation a kind ofly to reduce size, and can enlarge the twin shaft magnetic inductor of range of application, this inductor has been disclosed among the Japanese patent application No. No.2001-281703.
Figure 26 shows the plane graph of the twin shaft magnetic inductor that uses the GMR element, and wherein magnetic inductor 101 comprises the quartz substrate 102 with approximate square and specific thickness, comprises X-axis GMR element 111 to 114 and Y-axis GMR element 121 to 124.Here, all X-axis GMR elements 111 to 114 all are formed on the quartz substrate 102, they are combined together to form the X-axis magnetic inductor in the magnetic field that is used to detect X-direction, and all Y-axis elements 121 to 124 all are formed on the quartz substrate 102, and they are combined together to form the Y-axis magnetic inductor that is used for the magnetic field of detecting the Y direction vertical with X-direction.
The two couples of X-axis GMR element 111-112 and 113-114 are separately positioned on the point midway near quartz substrate 102 both sides, and described both sides and X-axis are crossed as the right angle, so that the configuration parallel to each other of described GMR element.Similarly, the two couples of Y-axis GMR element 121-122 and 123-124 are separately positioned on the point midway near quartz substrate 102 both sides, and described both sides and Y-axis are crossed as the right angle, so that the configuration parallel to each other of described GMR element.
X-axis GMR element 111 to 114 and the setting of Y-axis GMR element 121 to 124 on quartz substrate 102 differ from one another, and the direction of magnetization of pinning is also inequality on its nailed layer.Except that these aspects, they have identical configuration.
Therefore, as example its structure is described with X-axis GMR element 111 below.
Shown in Figure 27 and 28, X-axis GMR element 111 comprises banded Spin Valve film 131 and the magnetic bias film 132 that is set parallel to each other, and each magnetic bias film is all corresponding with the hard iron magnetisable material film of being made up of CoCrPt etc. with high coercive force and high squareness ratio (squareness ratio).
Spin Valve film 131 in pairs, their two ends link together as follows by magnetic bias film 132, promptly magnetic bias film be arranged on one " to " end of Spin Valve film, another magnetic bias film is arranged on the other end of " phase adjacency pair " Spin Valve film.In brief, Spin Valve film 131 connects together with zigzag by magnetic bias film 132.
As shown in figure 29, Spin Valve film 131 forms the sequential cascade of each layer, that is: free layer F on quartz substrate 102; Comprise that the thickness of being made up of Cu is the conduction interval layer S of 2.4nm (or 24 ); The nailed layer PD that forms by CoFe; Pinning (pinning) the layer PN that forms by PtMn; And the top layer C that forms by the thin metallic film that comprises titanium (Ti), tantalum (Ta) etc.
Free layer F changes the direction of magnetization in response to the external magnetic-field direction that puts on it, it is by the CoZeNb amorphous state magnetosphere 131a with 8nm (or 80 ) thickness, the upper strata that is laminated on CoZrNb amorphous state magnetosphere 131a has the NiFe magnetosphere 131b of 3.3nm (or 33 ) thickness, and is laminated on NiFe magnetosphere 131b upper strata and has greatly about the CoFe layer 131c of the thickness of 1nm to 3nm (or 10 are to 30 ) scope and constitute.
As shown in figure 27, in order to keep the uniaxial anisotropy of free layer F, bias field is applied to free layer F by magnetic bias film 132 along Y direction.
Wall S is the thin metal film by Cu or Cu alloy composition.
CoZrNb amorphous state magnetosphere 131a and NiFe magnetosphere 131b are made of the soft iron magnetisable material.In addition, the diffusion of Cu among the diffusion of Ni and the wall S among the CoFe layer 131 obstruct NiFe magnetosphere 131b.
Nailed layer PD is that the CoFe magnetosphere 131d of 2.2nm (or 22 ) forms by thickness.The back side of CoFe magnetosphere 131d is the antiferromagnetic film 131e that is provided with the switch connected mode, so that the pinning (or grappling) of its direction of magnetization process X-axis negative direction, these contents will be described below.
Pinning layer PN is made up of the antiferromagnetic film 131e of the thickness 24nm that is laminated on CoFe magnetosphere 131d upper strata (or 240 ), and wherein antiferromagnetic film 131e is by the PtNm alloy composition that contains Pt amount 45-55mo1%.When the action of a magnetic field during in the X-axis negative direction, antiferromagnetic film 131e is changed and is ordered lattice.
Hereinafter, the combination with nailed layer PD and pinning layer PN is called spike dowel (pin) layer.
X-axis GMR element 112-114 that other are all and Y-axis GMR element 121-124 have the same configuration with above-mentioned X-axis GMR element 111; Therefore will omit its specific descriptions.
The magnetic property (or magnetic characteristic) of relevant X-axis GMR element 111 to 114 and Y-axis GMR element 121 to 124 is described below.
Figure 30 is relevant impedance variation chart with respect to external magnetic field (Oe) size that is applied to X-axis GMR element 111.Here, the hysteresis characteristic that " solid line " representative changes with respect to the X-direction external magnetic field, its middle impedance and external magnetic field in prescribed limit-HK and+HK between roughly proportional variation, but keep constant substantially in the extraneous impedance of overshoot.In addition, " dotted line " representative is with respect to the characteristic of the external magnetic field variation of Y direction, and its middle impedance keeps constant substantially.
Arrow has represented to be suitable for the direction of magnetization of the nailed layer of X-axis GMR element 111-114 and Y-axis GMR element 121-124 among Figure 26, and direction is opposite each other for they.
That is, X-axis GMR element 111 and 112 has the identical direction of magnetization along the X-axis negative direction by the nailed layer of pinning layer pinning.
X-axis GMR element 113 and 114 has the identical direction of magnetization along the X-axis positive direction by the nailed layer of pinning layer pinning.
In addition, Y- axis GMR element 121 and 122 has the identical direction of magnetization along the Y-axis positive direction by the nailed layer of pinning layer pinning.
Y- axis GMR element 123 and 124 has the identical direction of magnetization along the Y-axis negative direction by the nailed layer of pinning layer pinning.
As described in Figure 31, connect and constitute above-mentioned X-axis magnetic inductor by X-axis GMR element 111-114 being arranged to full-bridge type, wherein the arrow in the square is represented the direction of magnetization by the nailed layer of pinning layer pinning.In said structure, use DC power supply so that voltage Vxin+ at one end to be provided (as 5V), provide voltage Vxin-(as 0V) at the other end, thus, Vxout+ occurs at the terminal H that draws from the junction between X-axis GMR element 111 and 113, Vxout-appears in the terminal L that draws from the junction between X-axis GMR element 112 and 114.Here, can extract electrical potential difference (or voltage difference) (Vxout+Vxout-) as output voltage V xout.
In brief, shown in the solid line of Figure 32, the X-axis magnetic inductor represents with respect to the characteristic of external magnetic field along the variation of X-axis, output voltage V xout prescribed limit-HK and+Hk between with the proportional substantially variation in external magnetic field, outside prescribed limit, keep constant substantially.
In addition, shown in the dotted line of Figure 32, output voltage V out maintains 0V substantially with respect to the variation of external magnetic field in Y-axis.
As shown in figure 33, similar to above-mentioned X-axis magnetic inductor, connect and constitute the Y-axis magnetic inductor by Y-axis GMR element 121-124 being arranged to full-bridge type.In said structure, use DC power supply that voltage Vyin+ at one end is provided (as 5V), provide voltage Vyin-(as 0V) at the other end, thus, Y- axis GMR element 122 and 124 terminals H place output Vyout+, Y- axis GMR element 121 and 123 terminals L place output Vyout-.Therefore, can extract electrical potential difference (Vyout+Vyout-) as output voltage V yout.
In brief, shown in the dotted line of Figure 34, the Y-axis magnetic inductor is described the hysteresis characteristic that changes with respect to the external magnetic field on Y-axis, wherein output voltage V yout prescribed limit-HK and+Hk between with the proportional substantially variation in external magnetic field, outside prescribed limit, keep constant substantially.
In addition, shown in the solid line of Figure 34, output voltage V yout maintains 0V substantially with respect to the variation of external magnetic field on Y-axis.
Below, with the manufacture method of describing about magnetic inductor 101.
As shown in figure 35, a plurality of island formula zone corresponding with film M is formed on quartz glass 141 surfaces of rectangle, and wherein film M is used to form independently GMR element.When quartz glass 141 through cutting process when cut-off rule B is divided into independently quartz substrate 102, film M is positional alignment according to the rules, so as with X-axis GMR element 111-114 and Y-axis GMR element 121-124 element coupling.In addition, collimating marks (being telltale mark) 142 is arranged on four angles of quartz glass 141, wherein forms each collimating marks with the approximate rectangular shape of removing the cross shaped head zone.
Below, shown in Figure 36 and 37, being provided with a plurality of rectangular metal plate 144, each metallic plate has the clear opening 143 of a plurality of square aperture, and they form and proper alignment in the trellis mode.In addition, the sectional view of the permanent magnet 145 of each rectangular parallelepiped protrusion part shape opening shape basic and each clear opening 143 is complementary, permanent magnet 145 inserts clear opening 143 respectively, the feasible upper end face that inserts the permanent magnet 145 of clear opening 143 respectively all is arranged on the same plane substantially parallel with metallic plate 144 surfaces, and wherein the polarity of " adjacent " permanent magnet 145 differs from one another.
Below, as shown in figure 38 be by the plate 151 that is constituted with the essentially identical transparency silica glass of metallic plate 144 shapes.In addition, the collimating marks of cross shaped head (or telltale mark) 152 is arranged on four angles of plate 151, with above-mentioned quartz glass 141 on collimating marks 142 cooperation, thereby set up location between quartz glass 141 and the plate 151.In addition, with each of a plurality of collimating marks 153 of the contour shape of each permanent magnet 145 coupling, all be formed on the position that conforms to clear opening 143 on the metallic plate 144.
By using the regulation adhesive that the upper end face of the lower surface of plate 151 and permanent magnet 145 is bonding.Simultaneously, by using collimating marks 153 between metallic plate 144 (supporting permanent magnet 145) and plate 151, to set up the location of regulation.
Then, below metallic plate 144 slave plates 151, remove.This just can produce the magnet array that disposes permanent magnet 145 on plate 151 by the trellis mode, and wherein polarity is different each other for " adjacent " permanent magnet.
As shown in figure 40, the method for the upper surface by using above-mentioned film M contact plate 151 contacts quartz glass 141 and plate 151.Here, the regulation that is based upon between quartz glass 141 and the plate 151 by mutual coupling collimating marks 142 and collimating marks 152 is located.Then, use fixed part 155 such as chip that quartz glass 141 and plate 151 are secured together.
In the above-mentioned situation as shown in figure 41, magnetic force direction is to point to the S utmost point of adjacent permanent 145 from the N utmost point of a permanent magnet 145.Therefore, as shown in figure 42, magnetic force puts on the film M of a permanent magnet 145 arrangements with four direction, i.e. Y-axis positive direction, X-axis positive direction, Y-axis negative direction and X-axis negative direction.
The quartz glass 141 and the plate 151 that are fixed together by fixed part 155, the temperature range of regulation such as 250 ℃ to 280 ℃ in through heat treated four hours.The pinning layer of GMR element and the nailed layer of pinning GMR element like this can sort.Quartz glass 141 and plate 151 are separated from one another, form the passivating film and the polyimide film that shield; Then, quartz glass 141 is cut apart according to cut-off rule B.So just produce magnetic inductor 101.
Compare with known magnetic inductor, the magnetoresistive element of AMR type is with respect to substrate tilting angle at 45, but above-mentioned twin shaft magnetic inductor has just other advantage of magnetic measurement earth magnetism level of the bias field do not used; Yet, when being applied in high-intensity magnetic field, the magnetized state variation abnormality, thus cause the unnecessary skew of the bridge construction of GMR element.
In order to solve above-mentioned shortcoming, can suppress the offset variation that the high-intensity magnetic field influence causes by permanent magnet is brought in attached to two of GMR element.Specifically, will be applied to the GMR element along the longitudinal direction greater than the big relatively magnetic field of the coercive force Hc of permanent magnet, promptly on the longitudinal direction of free layer so that when adhering to permanent magnet the initialization free layer, thereby produce magnetization.Here, can use above-mentioned magnet array in the method, be used for the orderly heat treated of spike dowel layer.
Yet in said method,, need on the longitudinal direction of GMR element, apply the magnetic field identical simultaneously with this permanent magnet magnetic force must on the direction vertical, applying magnetic field in the heat treated in order with GMR element longitudinal direction.Here, the magnetic field that in above-mentioned steps, needs different directions.
In the orderly heat treated of magnet array, it is consistent that each permanent magnet all will be configured to the center of each unit (cell) on its earth gravity center and the quartz glass, and when arranging each permanent magnet when causing magnetization, will move it the position so that on its earth gravity center and the quartz glass each of four angles consistent.This may produce position deviation, produces the change of inceptive direction thereupon, therefore will worsen certainty of measurement.When using above-mentioned magnetic inductor under the influence that high-intensity magnetic field is being arranged, skew just is easy to change.
As mentioned above, above-mentioned twin shaft magnetic field has the advantage of the hysteresis characteristic that reduces the GMR element under the low-intensity magnetic field influence; Yet this can not fully help the stability that is offset.
The magnetized state of change unexpectedly under high-intensity magnetic field influence can return to initial condition by applying the initial magnetic field, is embedded in film rolling under the GMR element with formation.Yet this method can not fully help the stability that is offset.
Summary of the invention
An object of the present invention is to provide that a kind of high-intensity magnetic field that is not applied influences and can controlled magnetic inductor in offset variation, to improve magnetic characteristic about this high-intensity magnetic field.
Another object of the present invention provides a kind of manufacture method that is used to make above-mentioned magnetic inductor.
Magnetic inductor of the present invention comprises magnetoresistive element and permanent magnet film, and they combine the GMR element that forms on the square quartz substrate to be formed on, and wherein said permanent magnet film is connected to the two ends of magnetoresistive element in pairs.That is to say that the size that magnetic inductor detects applied external magnetic field on biaxially oriented so that by suitably disposing the GMR element with respect to the quartz substrate four edges, realizes X-axis magnetic inductor and Y-axis magnetic inductor.Specifically, the invention is characterized in that the longitudinal direction of the direction of magnetization of nailed layer of magnetoresistive element and magnetoresistive element forms the miter angle of regulation.Perhaps, the direction of magnetization of the nailed layer of magnetoresistive element can become the miter angle of regulation with the direction of magnetization of permanent magnet film.Like this, even be applied under the high-intensity magnetic field situation, also can reliably suppress the offset variation that the bridging of GMR element connects; Therefore can improve impedance operator significantly to high-intensity magnetic field.
Magnetic inductor manufacture method of the present invention is characterised in that: realize orderly heat treated by the substrate that is configured on the magnet array, wherein dispose the different each other a plurality of permanent magnets of adjacent permanent polarity in magnet array, wherein permanent magnet is placed on respectively or selectively on four angles of the unit (corresponding with quartz substrate) in the substrate that heats then.Perhaps, by arranging substrate so that the direction of magnetization of the nailed layer of magnetoresistive element be complementary with the substrate diagonal that heats then, realize orderly heat treated, wherein by using the different each other magnet array of adjacent permanent polarity fully to magnetize described permanent magnet film.
Like this, the processing by simple and flexible just can generate magnetic inductor, and wherein the direction of magnetization of the nailed layer of magnetoresistive element becomes the miter angle of regulation with respect to the direction of magnetization of permanent magnet film.
Description of drawings
To describe above-mentioned and other purposes, aspect and embodiment of the present invention in detail according to following accompanying drawing, wherein:
Fig. 1 is the plane graph according to the magnetic inductor of the use GMR element of first embodiment of the invention;
Fig. 2 is the quartz substrate plane graph of GMR element that has been used for configuration that magnetic inductor makes among first embodiment;
Fig. 3 is the partial plan layout that is used for the metallic plate of magnetic inductor making among first embodiment;
Fig. 4 is the partial plan layout that is used to make the metallic plate of conventional magnetic inductor;
Fig. 5 is relevant X-axis and the induction direction F1 of Y-axis GMT element and the plane graph of F2 that magnetic inductor merges among first embodiment;
Fig. 6 is the disposition-plan that is used to make GMR element and permanent magnet on the quartz substrate of magnetic inductor among first embodiment;
Fig. 7 schematically illustrates the block diagram that the bridging of setting up connects in X-axis GMR element;
Fig. 8 schematically illustrates the block diagram that the bridging of setting up connects in Y-axis GMR element;
Fig. 9 is the chart of the magnetic characteristic of magnetic inductor merges among first embodiment X-axis and Y-axis GMR element;
Figure 10 is a chart of forming the magnetic characteristic of the X-axis of conventional magnetic inductor and Y-axis GMR element;
Figure 11 A is used to support the substrate of permanent magnet and the sectional view that metallic plate combines in magnetic inductor is made;
Figure 11 B is the sectional view that wherein uses fixed part that substrate and metallic plate are fixed together;
Figure 12 is the plane graph according to the magnetic inductor of second embodiment of the invention;
Figure 13 is the plane graph of the magnet array that is used for magnetic inductor of second embodiment of a plurality of bar magnets of wherein being arranged in parallel;
Figure 14 A is in the improvement example of the magnet array that uses in making the second embodiment magnetic inductor, has the silicon substrate sectional view of the groove of formation parallel to each other.
Figure 14 B is the sectional view that bar magnet inserts the magnet array in the silicon substrate groove respectively;
Figure 15 is the fragmentary, perspective view that the different bar magnet of polarity inserts the cross section of the configuration in the silicon substrate groove.
The plane graph that Figure 16 shows the different bar magnet of polarity and concerns from position between the isolated quartz substrate of quartz glass;
Figure 17 A is in the improvement example of the magnet array that uses in making the second embodiment magnetic inductor, has the cross-sectional view of substrate of the groove of formation parallel to each other;
Figure 17 B is the cross-sectional view that bar magnet inserts the magnet array in the groove of substrate respectively;
Figure 18 is the fragmentary, perspective view of cross section of configuration that is inserted into the bar magnet of the same magnetic in the substrate groove;
Figure 19 is the plane graph of position relation between the bar magnet of same magnetic and quartz substrate;
Figure 20 is the quartz glass plane graph that GMR element and bar magnet are set in making according to the magnetic inductor of second embodiment of the invention;
Figure 21 is the plane graph of the GMR element of magnetic inductor among second embodiment about the arrangement of X-axis and Y-axis induction direction;
Figure 22 is used for the permanent magnet plane graph of the making of the second embodiment magnetic inductor with respect to the GMR element arrangements that forms on the quartz substrate;
Figure 23 is the plane graph according to the magnetic inductor in the fourth embodiment of the invention;
Figure 24 is the plane graph of the GMR arrangements of components on the quartz glass in the magnetic inductor of the 4th embodiment is made;
Figure 25 is the plane graph by the induction direction of the magnetic inductor realization of the 4th embodiment;
Figure 26 is to use the plane graph of the twin shaft magnetic inductor of GMR element;
Figure 27 is the disposition-plan that is used for the GMR element of twin shaft magnetic inductor;
Figure 28 is the sectional view along A-A line among Figure 27;
Figure 29 is the graphic cross-sectional view of composition that is used for the Spin Valve film that uses in Figure 27 GMR element;
Figure 30 shows the chart of the magnetic characteristic of GMR element;
Figure 31 is the block diagram that schematically illustrates the full-bridge connection of the GMR element that adapts to the X-axis magnetic inductor;
Figure 32 shows the chart of the magnetic characteristic of X-axis magnetic inductor;
Figure 33 is the block diagram that schematically illustrates the full-bridge connection of the GMR element that adapts to the Y-axis magnetic inductor;
Figure 34 shows the chart of the magnetic characteristic of Y-axis magnetic inductor;
Figure 35 shows the formation plane graph of the GMR element film on quartz glass that uses in making the twin shaft magnetic inductor;
Figure 36 is the plane graph of metallic plate that is used to make the configuration permanent magnet of twin shaft magnetic inductor;
Figure 37 is the sectional view along B-B line among Figure 36;
Figure 38 is the plane graph that is used to make the transparency silica glass plate of twin shaft magnetic inductor;
Figure 39 is the sectional view of the permanent magnet of magnet array attached to the transparency silica glass plate;
Figure 40 is the sectional view that fixes the transparency silica glass plate of quartz glass and support permanent magnet by fixed part;
Figure 41 is the diagram perspective drawing that applies magnetic force direction between the permanent magnet of arrangement adjacent one another are in the magnet array;
Figure 42 is the plane graph that magnetizes the method for thin magnet film in making the twin shaft magnetic inductor under the permanent magnet influence; With
Figure 43 is the form corresponding to the experimental result that contrasts between all embodiment of twin shaft magnetic inductor and comparative example.
Embodiment
Below by the more detailed description the present invention of example reference accompanying drawing.
1. first embodiment
Fig. 1 is the plane graph that uses the twin shaft magnetic inductor of GMR element according to first embodiment of the invention.
That is to say, magnetic inductor 1 comprises the quartz substrate 2 with specific thickness and approximate square shape, thereby X-axis GMR element 11 to 14 is arranged on the X-axis magnetic inductor that is formed for detecting X1 direction of principal axis magnetic field on the quartz substrate 2, thereby Y-axis GMR element 21 to 24 is arranged on and is formed for the Y-axis magnetic inductor of detection of vertical in the axial Y1 direction of principal axis of X1 magnetic field on the quartz substrate 2.Specifically, the induction direction of X-axis magnetic inductor is the X1 direction of principal axis that becomes miter angle with X-direction, and the magnetic induction direction of Y-axis magnetic inductor is the Y1 direction of principal axis that becomes miter angle with Y direction.
Above, can use silicon to substitute the material of quartz substrate 2.
Among Fig. 1, X-axis GMR element 11 to 14 disposes in pairs, near the parallel each other point midway that is separately positioned on perpendicular to two limits of the quartz substrate 2 of X-axis.Similarly, Y-axis GMR element 21 to 24 disposes in pairs, near the parallel each other point midway that is separately positioned on perpendicular to two limits of the quartz substrate 2 of Y-axis.
Each X-axis GMR element 11-14 and Y-axis GMR element 21-24 are made up of a plurality of banded magnetoresistive elements 31 and a plurality of permanent magnet film 32, wherein banded magnetoresistive element 31 is made up of the Spin Valve film that is arranged in parallel with each other, permanent magnet film 32 is connected to the two ends of magnetoresistive element 31 along the longitudinal direction, and permanent magnet film 32 is made up of hard iron magnetic material with high coercive force and high squareness ratio such as the film of CoCrPt, wherein forms the miter angle of regulation between magnetoresistive element 31 longitudinal directions and adjacent permanent film 32 longitudinal directions.
In addition, each magnetoresistive element 31 is provided with respect to the miter angle that the near side (ns) of quartz substrate 2 forms regulation according to its longitudinal direction.In addition, each permanent magnet film 32 is parallel to the near side (ns) of quartz substrate 2 according to its longitudinal direction and is provided with, and the permanent magnet film 32 that wherein is arranged on magnetoresistive element 31 1 ends and another permanent magnet film 32 that is arranged on magnetoresistive element 31 other ends are on the distance of measuring the near side (ns) apart from quartz substrate 2 and different.
The direction of magnetization of magnetoresistive element 31 free layers is its longitudinal direction, and the direction of magnetization of permanent magnet film 32 is similarly its longitudinal direction.Therefore, between the direction of magnetization of the free layer of magnetoresistive element 31 and permanent magnet film 32 direction of magnetizations, form the miter angle of regulation.
In addition, the direction of magnetization that is pinned at nailed layer of magnetoresistive element 31 becomes miter angle with the longitudinal direction of magnetoresistive element 31.That is, the magnetic direction that is applied in the orderly heat treated becomes miter angle with the longitudinal direction of magnetoresistive element 31.
And the direction of magnetization that is pinned at nailed layer of magnetoresistive element 31 is identical with the direction of magnetization of permanent magnet film 32.That is, the magnetic direction that is applied in the orderly heat treated is identical with the magnetic direction that is applied to magnetize this magnetoresistive element 31.
The Spin Valve membrane structure of magnetoresistive element 31 is identical with aforementioned Spin Valve film 131 structures that are applied to X-axis GMR element 111-114 and Y-axis GMR element 121-124; Therefore omitting its details at this describes.
Present embodiment is characterised in that each X-axis GMR element 11-14 and Y-axis GMR element 21-24 define the direction of magnetization of the nailed layer PD of magnetoresistive element 31, so that identical with the direction of magnetization of permanent magnet film 32.
In addition, magnetoresistive element 31 connects together with the mode that the longitudinal direction of permanent magnet film 32 is inclined to miter angle with the longitudinal direction of permanent magnet film 32 by free layer F.
To describe the manufacture method of magnetic inductor 1 below in detail.
Similar aforementioned magnetic inductor 101 is provided with and is formed on the surface of rectangle quartz glass 41 with a plurality of island-shaped areas territory corresponding to permanent magnet film 32 that the GMR element is connected respectively.As shown in Figure 2, the film N definition of corresponding permanent magnet film 32 is provided with the regional M of GMR element, with convenient quartz glass 41 in cutting procedure when cut-off rule B is divided into independently quartz substrate 2, alignment area M is so that the assigned position of itself and X-axis GMR element 11-14 and Y-axis GMR element 21-24 coupling.
In addition, the collimating marks (not shown) is formed on four angles of quartz glass 41.After permanent magnet film 32 forms, the monofilm (or multimembrane) that is used to form the GMR element is formed on all surfaces of quartz glass 41.
Next, as shown in Figure 3, provide and wherein formed the metallic plate 44 that each has a plurality of clear openings 43 of square openings in the trellis mode.Each has a plurality of permanent magnets 45 that the opening of rectangular parallelepiped protrusion part and cross sectional shape and clear opening 43 mates substantially and is aligned in substantially on the face on the surface that is parallel to metallic plate 44 according to its upper end face, and the different each other mode of the polarity of " adjacent " permanent magnet 45 is inserted into clear opening 43 respectively.
Below, that be made up of transparency silica glass and plates metallic plate 44 basic identical shapes are provided.Similar to aforementioned panels 151 shown in Figure 38, form collimating marks 153 at the assigned position corresponding with clear opening 43.
Above for setting up the assigned position between quartz glass 41 and plate, on four angles of plate, form aforesaid collimating marks 152, wherein with present embodiment that previous examples shown in Figure 38 is compared in, on X-axis negative direction and Y-axis negative direction, all be shifted half of an edge lengths of quartz substrate 2 of the position of each collimating marks 152, in other words, collimating marks 152 has been offset half pitch-row (pitch).Certainly form the collimating marks of the such alignment mark 152 and half pitch-row that has been shifted onboard.
Form magnet array by the permanent magnet of arranging in the trellis mode 45, wherein the upper end face of permanent magnet 45 by the adhesive that uses regulation attached to the lower surface of plate.At this moment, by using such alignment mark 153 between permanent magnet 45 and plate, to set up the location of regulation.
Next, remove metallic plate 44, so that generate magnet array, wherein arrange permanent magnet 45 in the trellis mode, polarity is different each other to make adjacent permanent 45.
Make up quartz glass 41 and plate by the upper surface that film M is contacted this plate.Here, the collimating marks of collimating marks by half pitch-row that this plate has been shifted and aforementioned quartz glass 41 matches each other and is based upon regulation location between quartz glass 41 and the plate.Therefore just 4 angles of quartz substrate 2 can be consistent with the earth gravity center of permanent magnet 45 respectively, wherein quartz substrate 2 forms the independent unit that obtains from quartz substrate 41.Then, quartz glass 41 and plate are secured together such as clip by using a plurality of fixed parts.
Next, the pinning layer PN of magnetoresistive element 31 is carried out orderly heat treated, simultaneously nailed layer PD is also carried out pinning.
As shown in Figure 2, under the condition that quartz glass 41 and plate have been fixed together, permanent magnet 45 is arranged on four angles of the quartz substrate of cutting apart in subsequently the dividing processing 2, thereby polarity is different each other for adjacent permanent.Therefore, the magnetic direction of generation arrives the S utmost point of another " adjacent " permanent magnet 45 along the N utmost point of permanent magnet 45, and wherein magnetic direction is parallel to every limit of quartz substrate 2.That is, magnetic field is according to becoming the directive effect of miter angle on each film M with the longitudinal direction of the spike dowel layer of magnetoresistive element 31.
Below, under vacuum state, carrying out heat treated in 250 ℃ to 280 ℃ scopes of set point of temperature by quartz glass 41 and the plate that uses fixed part to be fixed together.
Therefore just can finish orderly heat treated to the pinning layer PN in the spike dowel layer of the magnetoresistive element 31 that belongs to each X-axis GMR element 11-14 and Y-axis GMR element 21-24.Here, nailed layer PD carries out pinning with the switch ways of connecting.
Above-mentioned X-axis GMR element 11-14 and Y-axis GMR element 21-24 carry out pattern and form, thereby pattern in accordance with regulations is provided with, and wherein permanent magnet 32 is fully connected together in the zigzag mode.
As shown in Figure 5, aforementioned magnetic inductor 1 has about the X-axis induction direction F1 of the spike dowel layer of magnetoresistive element 31 and Y-axis induction direction F2, wherein X-axis induction direction F1 becomes miter angle with a limit of quartz substrate 2, and Y-axis induction direction F2 becomes miter angle with another limit of quartz substrate 2.
Below, use identical magnet array as shown in Figure 6 and do not change its position, so that under permanent magnet 45 is arranged to its earth gravity center and condition that four angles of quartz substrate 2 conform to respectively, arrange permanent magnet film 32 to begin magnetization.Here, the direction of magnetization of permanent magnet 32 is arranged to identical with the direction of magnetization of the nailed layer PD of magnetoresistive element 31.Therefore, the nailed layer PD of magnetoresistive element 31 can effectively carry out pinning; Thereby can generate the magnetic inductor 1 that influenced by permanent magnet 32 magnetization.
Fig. 7 shows the bridging of setting up between the X-axis GMR element 11-14 of the X-axis magnetic inductor in forming magnetic inductor 1 and connects, wherein reference marker X
1Represent X-axis GMR element 11 and 12, X
2Represent X-axis GMR element 13 and 14.Aforementioned X-axis induction direction F1 shown in all induction directions of X-axis GMR element 11-14 and Fig. 5 is complementary; Therefore, when the external magnetic field acts on the opposite direction of X-axis induction direction F1, the electromotive force of terminals " L " will be higher than another terminals " H ".
Fig. 8 shows the bridging of setting up between the Y-axis GMR element 21-24 of the Y-axis magnetic inductor in forming magnetic inductor 1 and connects, wherein reference marker Y
1Represent Y- axis GMR element 21 and 22, Y
2Represent Y-axis GMR element 23 and 24.Aforementioned Y-axis induction direction F2 shown in all induction directions of Y-axis GMR element 21-24 and Fig. 5 is complementary; Therefore, when the external magnetic field acts on the opposite direction of Y-axis induction direction F2, the electromotive force of terminals " L " will be higher than another terminals " H ".
Fig. 9 shows the X-axis GMR element 11-14 of composition magnetic inductor 1 and the magnetic characteristic of Y-axis GMR element 21-24, and Figure 10 shows the X-axis GMR element 111-114 of the aforementioned magnetic inductor 101 of composition and the magnetic characteristic of Y-axis GMR element 121-124.Here, solid line is represented the magnetic characteristic of GMR element senses direction, and dotted line is represented the magnetic characteristic of the non-induction direction of GMR element.
As shown in Figure 9, can see magnetic hysteresis loop about the induction direction of GMR element 11-14 and 21-24.In addition, can see magnetic hysteresis loop equally about the non-induction direction of GMR element 11-14 and 21-24, yet, arrive or during near " 0 " value in magnetic field magnetic hysteresis disappear; Thereby can improve impedance operator to high-intensity magnetic field.
Shown magnetic hysteresis loop among Figure 10, wherein, magnetic hysteresis loop near " 0 " value in magnetic field the time, occurred about the non-induction direction of aforementioned GMR element 111-114 and 121-124; Therefore, the necessary impedance operator that reduces high-intensity magnetic field.
Generally, compare with the GMR element that merges in the aforementioned magnetic inductor 101, each permanent magnet film 32 forms the miter angle of stipulating with the longitudinal direction of each magnetoresistive element 31 in the present embodiment, can significantly improve the impedance operator to high-intensity magnetic field of the GMR element that merges in the magnetic inductor 1 of present embodiment.
As mentioned above, present embodiment is by being provided with X-axis GMR element 11-14 and Y-axis GMR element 21-24 makes magnetic inductor 1 on quartz substrate 2, wherein magnetoresistive element 31 each direction of magnetization of being made as nailed layer PD becomes the regulation miter angle with each direction of magnetization of free layer F.Therefore,, can reliably suppress the offset variation of bridge, thereby significantly improve impedance operator high-intensity magnetic field even when strong magnetic field action.
Make the method for magnetic inductor 1 according to present embodiment, permanent magnet 45 is set on four angles of the quartz substrate 2 of being separated in the dividing processing subsequently, make that the polarity of adjacent permanent 45 is different each other, wherein magnetic field acts on each permanent magnet film M in a longitudinal direction; Therefore, even when strong magnetic field action, can reliably suppress the offset variation of bridgt circuit.Generally speaking, can generate the magnetic inductor 1 that can significantly improve by quick-reading flow sheets to the impedance operator of high-intensity magnetic field.
Compare with the clear opening 143 that aforementioned wherein each collimating marks is offset half pitch-row, the plate that present embodiment uses has the clear opening 43 that need not to change shape and spacing.Certainly, can use each clear opening wherein to be offset other plate of half pitch-row.In addition, can use such alignment mark and new collimating marks all to be offset the plate of half pitch-row.
The magnet array that is fit to present embodiment needn't be restricted to permanent magnet 45 attached to the plate of being made by aforementioned quartz glass 44.That is, shown in Figure 11 A, can use by Ni
42Fe
58The substrate 46 that alloy constitutes, and the metallic plate 47 that wherein forms a plurality of clear openings 43 that conform to permanent magnet 45 external shape that constitutes by tungsten (W), so that substrate 46 and metallic plate 47 can be attached together, thereby permanent magnet 45 can be inserted into respectively in the clear opening 43.
Shown in Figure 11 B, with the magnetic inductor 101 similar (seeing Figure 40) that aforementioned use fixed part 155 is fixed together quartz glass 141 and plate 151 as clip, quartz glass 41 fixes by fixed part 155.
Ni in the aforementioned magnet array
42Fe
58The thermal coefficient of expansion of alloy and tungsten (W) is all approaching with silicon (Si); Therefore, even, between substrate 46 and metallic plate 47, can not produce position deviation adding when pining for thermal expansion occurring; Therefore can improve the positional precision of magnet array.Here, metallic plate 47 need not to remove as the part of magnet array; Therefore the support precision of permanent magnet 45 can be improved, thereby magnetic inductor 1 can be easily made.
2. second embodiment
Figure 12 shows the plane graph according to the magnetic inductor 50 of second embodiment of the invention, and wherein the GMR element is arranged along the four edges of quartz substrate 2, and each GMR element is made of magnetoresistive element 31 and permanent magnet film 32.The difference of the magnetic inductor 50 of second embodiment and the magnetic inductor 1 of first embodiment is that the longitudinal direction of each magnetoresistive element 31 all is parallel to the near side (ns) of quartz substrate 2.
Specifically, magnetic inductor 2 comprises the quartz substrate 2 of " roughly square " with specific thickness and X-axis GMR element 51-54 and the Y-axis GMR element 61-64 that forms on this quartz substrate 2, wherein X-axis GMR element 51-54 is formed for detecting the X-axis magnetic inductor in X-direction magnetic field, and Y-axis GMR element 61-64 is formed for detecting the Y-axis magnetic inductor in Y direction magnetic field.
Above-mentioned X-axis GMR element 51-54 is provided with in pairs, and is separately positioned on the point midway that approaches perpendicular to quartz substrate 2 both sides of X-axis in two pairs of modes parallel to each other.Similarly, Y-axis GMR element 61-64 is provided with in pairs, and is arranged on the point midway on both sides in addition of the quartz substrate 2 that approaches the vertical Y axle in two pairs of modes that are arranged in parallel with each other.
Each X-axis GMR element 51-54 and Y-axis GMR element 61-64 are by approximate parallelogram and comprise that the magnetoresistive element 31 of the banded Spin Valve film that is arranged in parallel with each other forms, each the permanent magnet film 32 that is connected to magnetoresistive element 31 two ends at longitudinal direction is all formed by having the approximate foursquare film that hard iron magnetic material high coercive force and high squareness ratio such as CoCrPt constitute, and it is consistent each other that wherein magnetoresistive element 31 and permanent magnet film 32 are arranged as longitudinal direction.
Form each magnetoresistive element 31, make its longitudinal direction parallel with the near side (ns) of quartz substrate 2.In addition, form each permanent magnet film 32, make that the near side (ns) of its longitudinal direction and quartz substrate 2 is parallel, the near side (ns) of " in pairs " the permanent magnet film 32 that wherein is connected to same magnetoresistive element 31 two ends and quartz substrate 2 equidistantly is provided with.
The longitudinal direction of the direction of magnetization of above-mentioned nailed layer and magnetoresistive element 31 is inclined to miter angle, yet the direction of magnetization of permanent magnet film 32 is along the longitudinal direction of permanent magnet film 32.That is, the direction of magnetization of the nailed layer of magnetoresistive element 31 becomes the miter angle of regulation with the direction of magnetization of permanent magnet film 32.
Be similar to the magnetic inductor 1 of first embodiment, the structure that is suitable for each X-axis GMR element 51-54 and the Spin Valve film of each Y-axis GMR element 61-64 is identical with the structure of aforementioned Spin Valve film 131 in being suitable for each X-axis GMR element 111-114 and each Y-axis GMR element 121-124; Therefore, the detailed description of relevant Spin Valve membrane structure will be omitted.
In each X-axis GMR element 51-54 and each Y-axis GMR element 61-64, the longitudinal direction of the nailed layer PD of magnetoresistive element 31 and the longitudinal direction of permanent magnet film 32 are complementary.Here the direction of magnetization of nailed layer PD becomes miter angle with the longitudinal direction of magnetoresistive element 31.That is, the direction of magnetization of the nailed layer PD of magnetoresistive element 31 becomes the miter angle of regulation with the direction of magnetization of permanent magnet film 32.
Describe the manufacture method of magnetic inductor 50 below in detail.
Second embodiment is characterised in that and uses two class magnet arrays.That is, be similar to the magnetic inductor 1 of first embodiment, on the rectangle quartz glass, form the Spin Valve film, so that form permanent magnet film 32 and independent GMR element.
Below, as shown in figure 13, prepared first metallic plate 67 of rectangle, the clear opening 43 inclination miter angles of a plurality of rectangular apertures and being arranged in parallel with each other wherein, wherein a plurality of bar magnets 68 that rectangle-the parallelepiped permanent magnet is formed that mate clear opening 43 opening shapes substantially by shape of cross section are inserted into clear opening 43 in such a way respectively, be that its upper surface is arranged on the surperficial substantially parallel same plane with first metallic plate 67, and adjacent bar magnet 68 polarity is different each other.
Then, similar with first embodiment, first plate of the basic form fit with first metallic plate 67 of the shape be made up of transparency silica glass is provided, and wherein the upper surface of bar magnet 68 is arranged in parallel with each other in the magnet array, and the adhesive attachment by regulation is at the lower surface of this first plate.At this moment, the regulation of using collimating marks to set up between this first plate and the bar magnet 68 is located.
Next, remove first metallic plate 67, thereby produce the magnet array that bar magnet 68 is arranged in parallel with each other, polarity is different each other for adjacent bar magnet 68.
Quartz substrate is set to contact the upper surface of first plate.That is, by match each other they collimating marks and between the aforementioned quartz glass 41 and first plate, set up the location of regulation.Below, use a plurality of fixed parts such as clip that the quartz glass 41 and first plate are secured together.
Wherein the aforementioned magnet array that is arranged in parallel with each other of bar magnet 68 has high accuracy, even this is that their direction of magnetization can not depart from yet because they produce the skew of unforeseen position and spacing, so can not spread in the heat treated in order.
Similar with first embodiment, second embodiment is designed to and can provides by Ne
42Fe
58The substrate that alloy is formed, with the metallic plate that comprises that wherein a plurality of clear openings of being made up of tungsten (W) conform to the external shape of bar magnet 68, wherein substrate and metallic plate are attached together so that bar magnet 68 can insert clear opening respectively.
Except above-mentioned magnet array type, magnet array can use various magnet array types, as following every:
(1) each has the magnet array that the bar magnet of opposed polarity is alternately arranged.
Shown in Figure 14 A, dicing saw 72 is used at a plurality of grooves 73 with prescribed distance that are set parallel to each other of the last formation of silicon (Si) substrate 71 surfaces (or first type surface) 71a.The Rack of each groove 73 equals to insert the width of bar magnet 68 wherein substantially, equals the width of dicing saw 72 simultaneously substantially.Similar with aforementioned magnet array, the spacing of adjacent slot 72 is set to half of quartz substrate 2 catercorner lengths.
Then, as shown in Figure 14B, bar magnet 68 is with in the different each other mode difference insertion groove 73 of the polarity of adjacent bar magnet 68.Like this, the surperficial 71a of silicon substrate 71 is arranged and be exposed to bar magnet 68 according to the different each other mode of adjacent bar magnet 68 polarity among Figure 15, and its Semi-polarity is according to N, S, N ... utmost point sequence arrangement.As mentioned above, can generate the magnet array that each bar magnet with opposed polarity 68 is alternately arranged on silicon substrate 71.
In aforementioned magnet array, the spacing of adjacent bar magnet 68 is set to half of catercorner length of quartz substrate 2.Therefore, as shown in figure 16, when magnet array is arranged on the quartz glass 41, thereby when arranging single bar magnet 68 to be complementary with the diagonal with each individual unit 75 (, the zone corresponding with quartz substrate 2 divided at cutting procedure subsequently), its " adjacent " bar magnet 68 is positioned on the diagonal angle of unit 75, to reach the diagonal symmetry.
(2) bar magnet of the identical polar magnet array that is arranged in parallel with each other and forms
Shown in Figure 17 A, dicing saw 72 is used at Ni
42Fe
58The groove 73 that a plurality of spacings in accordance with regulations of the last formation of the surface of alloy substrate 77 (or first type surface) 77a are arranged in parallel with each other, wherein groove 73 have roughly be provided with the consistent Rack of width that inserts bar magnet 68 wherein.The spacing basic setup of " adjacent " groove 73 is the catercorner length that equals quartz substrate 2.
Below, shown in Figure 17 B, bar magnet 68 inserts respectively in the groove 73 of substrate 77 according to the mode that all adjacent bar magnets 68 have identical polarity.Like this, the bar magnet 68 of all identical polars is arranged in Ni
42Fe
58On the surperficial 77a of alloy substrate 77, wherein same pole " N " order appears at surperficial 77a as shown in figure 18.
Ni between the adjacent bar magnet 68 that has same pole " N " on the surperficial 77a
42Fe
58The mid portion of alloy substrate 77 has opposite polarity, i.e. polarity " S ".That is to say, along with equaling half prescribed distance of the quartz substrate 2 catercorner lengths bar magnet 68 that be arranged in parallel substantially according to having, different magnetic poles N clearly as if, S, N ... be set in sequence on the parallel prescribed direction (that is, among Figure 18 from left to right direction).
As mentioned above, can generate wherein have identical polar bar magnet 68 at Ni
42Fe
58The magnet array that is arranged in parallel with each other on the alloy substrate 77.
In the aforementioned magnet array, the spacing of adjacent bar magnet 68 is set to equal quartz substrate 2 cornerwise length.Promptly, when magnet array the mode on the diagonal of individual unit 75 of being arranged in according to single bar magnet 68 as shown in figure 19 is installed on the quartz glass 41, all mate the line segment 76 of drawing from the position of five equilibrium adjacent bar magnet 68 spacings along each angle of the unit 75 of diagonal symmetric arrays.Here, each line segment 76 all intersects with the diagonal angle of unit 75 respectively, and 75 diagonal symmetry is drawn along the unit, and the position of line segment 76 is corresponding to the magnetic pole different with the magnetic pole " N " of bar magnet 68 (i.e. " S " utmost point).That is, can obviously see having magnetic pole the magnet of " S " is arranged on the angle of unit 75.
Aforementioned magnet array can effectively stop bar magnet to attract each other, drop or unforeseen self rotation.Therefore, can fix the bar magnet 68 that uses metal sheet to fix at assigned position easily and accurately.
Subsequently, the pinning layer PN in the magnetoresistive element 31 spike dowel layers is carried out orderly heat treated.
At first, as shown in figure 20, three bar magnets 68 according to adjacent bar magnet 68 each other the different mode of polarity be arranged to become miter angle with prescribed distance with the regulation limit of quartz glass 41.
In this case, set up the magnetic field of regulation along direction from an adjacent bar magnet 68 to another adjacent bar magnet, wherein magnetic field becomes miter angle with the regulation limit of quartz substrate 2, thereby becomes the direction of miter angle to apply magnetic field along the longitudinal direction with each spin film M.
Below, quartz glass 41 and aforementioned panels are fixed together by fixed part, and carry out four hours heat treated in 250 ℃ to 280 ℃ scopes of set point of temperature under vacuum state.
Therefore can carry out orderly heat treated to each the pinning layer of magnetoresistive element 31 of forming X-axis GMR element 51-54 and Y-axis GMR element 61-64.Then, similar to first embodiment, spin valve layer is carried out pattern form.Wherein X-axis induction direction F1 and Y-axis that the result just can generate are as shown in figure 21 responded to the magnetic inductor 50 that direction F2 is positioned at the nailed layer P of magnetoresistive element 31.
Then, as shown in figure 22, use it to constitute the magnet array similar and magnetize permanent magnet film 32 to the formation of the magnet array that uses among first embodiment.
More than similar to first embodiment, permanent magnet 45 is set to the on four angles of the quartz substrate 2 of separating in the cutting procedure subsequently, so that adjacent permanent 45 polarity is different each other, thereby set up from the magnetic field of the another one permanent magnet 45 of a permanent magnet 45 to the S utmost points of the N utmost point.This action of a magnetic field is parallel to every limit of quartz substrate 2; Therefore, set up magnetic field on the direction that can mate substantially at longitudinal direction with each permanent magnet film 32.
As mentioned above, can generate magnetic inductor 50, wherein the free layer F of the spike dowel layer of magnetoresistive element 31 is initialised in magnetization, and permanent magnet film 32 is fully magnetized.
The magnetic inductor 50 of second embodiment uses the bridging identical with magnetic inductor 1 among first embodiment to connect.In brief, second embodiment can provide the identical effect with aforementioned first embodiment.
3. the 3rd embodiment
Second embodiment uses the identical magnet array of magnet array structure that uses among its structure and first embodiment, so that fully adhere to permanent magnet 45 and magnetization permanent magnet film 32.Here, can realize the magnetization of permanent magnet film 32 by the magnet array that is used for orderly heat treated among aforementioned second embodiment of direct use, and not need to change the arrangement position of magnet.
In magnetization, set up the magnetic field that becomes miter angle with a limit of quartz substrate 2 along the diagonal of the quartz substrate 2 of in cutting procedure subsequently, separating.Therefore, magnetic field becomes at the longitudinal direction with permanent magnet 32 on the direction of miter angle to affact on the permanent magnet film 32, and wherein the longitudinal direction of this permanent magnet film 32 parallels with a limit of quartz substrate 2.
Like this, the terminal of free layer F is initialized to identical with the direction of magnetization of permanent magnet film 32.Usually, because shape anisotropy, the inceptive direction of free layer F just is aligned in longitudinal direction.Based on this reason, each GMR element is initialized to the longitudinal direction that be arranged in parallel along the regulation limit with quartz substrate 2 in magnetization.
As mentioned above, can generate the magnetic inductor of the 3rd embodiment, wherein the free layer F of magnetoresistive element 31 is initialised in magnetization, and permanent magnet film 32 is fully magnetized.
The 3rd embodiment allows a small amount of loss of the terminal of free layer F, compares the slight desensitization of this meeting with second embodiment; Yet, design the 3rd embodiment so that the direction of magnetization is set to first embodiment similar; Therefore, even when strong external magnetic field acts on magnetic inductor, also can significantly reduce offset variation.
4. the 4th embodiment
Figure 23 shows that wherein similar to previous embodiment, the magnetic inductor 81 of the 4th embodiment is made up of the GMR element and the permanent magnet film that are arranged on the quartz substrate 2 according to the plane graph of the magnetic inductor of fourth embodiment of the invention.Here, magnetic inductor 81 is different with the magnetic inductor 50 among second embodiment, the former X-axis GMR element 51-52 is set parallel to each other near the point midway on a limit of the quartz substrate 2 that is positioned at the X-axis negative direction, Y-axis GMR element 63-64 is set parallel to each other near the point midway on another limit of the quartz substrate 2 that is positioned at the Y-axis negative direction, thereby eliminate the sensitivity that is caused by X-axis GMR element 51-52 and Y-axis GMR element 63-64, they are substantially disposed in quartz substrate 2 centers and become miter angle with the regulation limit of quartz substrate 2.
In the making of magnetic inductor 81, pinning layer to magnetoresistive element 31 carries out orderly heat treated, wherein quartz glass 41 set point of temperature under vacuum state for example heated four hours in 250 ℃ to 280 ℃ scopes, and wherein the action of a magnetic field is in the direction of paralleled by X axis GMR element 51-52 and Y-axis GMR element 63-64.That is, as shown in figure 24, preferably from the lower-left to upper right direction along X-axis GMR element 51-52 and the longitudinal direction of Y-axis GMR element 63-64 apply magnetic field with same intensity.
Similar to previous embodiment, magnetic inductor 81 magnetizes by quartz glass and plate are secured together.
As mentioned above, can initialization form the free layer F of the magnetoresistive element 31 of X-axis GMR element 51-54 and Y-axis GMR element 61-64, and fully magnetize permanent magnet film 32.Therefore, can generate magnetic inductor 81, wherein the nailed layer PD of magnetoresistive element 31 and permanent magnet film 32 are fully magnetized.
As shown in figure 25, except that basic setup in the supercentral GMR element 51-52 and the magnetoresistive element 31 among the 63-64 of quartz substrate 2, aforementioned magnetic inductor 81 has with respect to the X-axis of the nailed layer PD of magnetoresistive element 31 induction direction F1 and Y-axis induction direction F2.
The bridging of forming the GMR element of magnetic inductor 81 connects identical with the magnetic inductor 1 of first embodiment.Therefore, the 4th embodiment can provide the effect similar to first embodiment.
5. the 5th embodiment
The 5th embodiment and the 4th embodiment are basic identical, it is characterized in that not using aforementioned magnet array and have used balanced magnetic field, so that to magnetize permanent magnet film 32 with the similar mode of aforementioned orderly heat treated.
Here, the magnetization of permanent magnet film 32 will be described in detail.
That is, similar with aforementioned orderly heat treated as shown in figure 24, from the lower-left to the upper right direction the balanced magnetic field of using strength equilibrium.
X-axis GMR element 53-54 that be arranged in parallel as for a limit and the Y-axis GMR element 61-62 that be arranged in parallel with another limit of quartz glass 41 with quartz glass 41, on quartz substrate 2 diagonal that the action of a magnetic field separates in cutting procedure subsequently, its direction becomes miter angle with every limit of quartz substrate 2.That is, the action of a magnetic field is parallel to each permanent magnet film 32 on quartz substrate 2 regulation limits at its longitudinal direction, and its direction becomes miter angle with the longitudinal direction of each permanent magnet film 32.
The terminal initial direction of free layer F is identical with the direction of magnetization of permanent magnet 32, wherein because shape anisotropy, free layer F magnetizes at longitudinal direction so that along the longitudinal direction of corresponding GMR element, promptly along the regulation limit of quartz glass 41, and in magnetization initialization free layer F.
The 5th embodiment allows a small amount of loss of the terminal of free layer F, compares with the sensitivity of the second embodiment magnetic inductor, and this loss is desensitization slightly; Yet the 5th embodiment is designed to realize the direction of magnetization identical with first embodiment; Therefore, even when strong external magnetic field acts on magnetic inductor, can significantly reduce offset variation.
Figure 43 shows the comparing result between magnetic inductor of the present invention (being embodiment 1-5) and the aforementioned magnetic inductor (being comparative example), and wherein embodiment 1 is corresponding to the magnetic inductor among first embodiment 1; Embodiment 2 is corresponding to the magnetic inductor among second embodiment 50; Embodiment 3 is corresponding to the magnetic inductor among the 3rd embodiment; Embodiment 4 is corresponding to the magnetic inductor among the 4th embodiment 81; Embodiment 5 is corresponding to the magnetic inductor among the 5th embodiment.
Figure 43 illustrates that all magnetic inductors among the embodiment 1-5 compare with comparative example and have the superior impedance operator to high-intensity magnetic field.In each the embodiment 1-5 that compares with comparative example, after applying (exposure) 100Oe magnetic field, just can reduce offset variation, this has represented the impedance operator to high-intensity magnetic field.
Intersect with the direction of magnetization of the nailed layer of realizing in heat treated in order with the longitudinal direction of GMR element wherein and to compare for the comparative example at right angle, each embodiment 1-5 can reduce susceptibility; Yet, can think that each embodiment 1-5 shows the good impedance operator to high-intensity magnetic field.
In addition, the direction of magnetization of the nailed layer of realizing in the direction of magnetization of permanent magnet film and the orderly heat treated among the embodiment 2 and 4 is different, and the direction of magnetization that realizes in the direction of magnetization of permanent magnet film and the orderly heat treated among the embodiment 1,3 and 5 is identical, compare with 4 with embodiment 2, embodiment 1,3 and 5 can provide the good impedance operator to high-intensity magnetic field.
In each of the direction of magnetization of permanent magnet film and the unmatched embodiment 1,3 of the longitudinal direction of GMR element (being the longitudinal direction of free layer) and 5, the free layer terminal is magnetized on the direction of magnetization of permanent magnet film; Therefore a small amount of loss of slight desensitising can appear.Yet, because its " good " is very little about the variation ratio of susceptibility to the impedance operator of high-intensity magnetic field.
As mentioned above, the present invention has multinomial effect and technical characterstic, will be described below.
(1) magnetic inductor of the present invention is characterised in that the direction of magnetization of the nailed layer of magnetoresistive element becomes the miter angle of regulation with the longitudinal direction of magnetoresistive element; Therefore, even when applying high-intensity magnetic field, can reliably suppress the offset variation that the GMR member bridge connects; Therefore, can significantly improve impedance operator to high-intensity magnetic field.
(2) in addition, the direction of magnetization that the magnetoresistive element nailed layer can be set becomes miter angle improving magnetic inductor with the direction of magnetization of permanent magnet film, even like this when applying high-intensity magnetic field, can effectively suppress the offset variation of GMR member bridge connection; Therefore, can significantly improve impedance operator to high-intensity magnetic field.
(3) manufacture method of magnetic inductor according to the present invention, use magnet array to carry out orderly heat treated, a plurality of permanent magnets in the magnet array according to adjacent permanent each other the different mode of polarity arrange, a substrate wherein is set on magnet array so as permanent magnet to be arranged to respectively or selectively with substrate in four angles couplings of unit, heat then.Here, by not changing relative position relation between them on the magnet array substrate being set with regard to the described permanent magnet film of magnetizable; Therefore, free layer that can the initialization magnetoresistive element and easily magnetize described permanent magnet film.As a result, can easily generate magnetic inductor by quick-reading flow sheets, wherein the direction of magnetization of magnetoresistive element becomes the regulation angle of 45 degree with the direction of magnetization of permanent magnet film.
(4) substrate that the direction of magnetization that can be by heating its nailed layer and the diagonal of the unit in the substrate are complementary carries out the mode of orderly heat treated and improves this manufacture method, wherein by substrate being set with regard to this permanent magnet film of magnetizable on the different magnet array of magnetic pole each other in adjacent permanent, thereby free layer that can the initialization magnetoresistive element, and easily magnetize this permanent magnet film.Like this, just can be easy to generate magnetic inductor by quick-reading flow sheets, wherein the direction of magnetization of the nailed layer of magnetoresistive element becomes the regulation angle of 45 degree with the direction of magnetization of permanent magnet film.
(5) substrate that the diagonal of unit is complementary in the direction of magnetization that can also be by heating its nailed layer and the substrate carries out the mode of orderly heat treated and further improves this manufacture method, wherein, substrate magnetizes this permanent magnet film so that the diagonal of the direction of magnetization of nailed layer and unit mates substantially by being set, thereby free layer that can the initialization magnetoresistive element, and easily magnetize this permanent magnet film.Thereby, just can easily generate magnetic inductor by quick-reading flow sheets, wherein the direction of magnetization of the nailed layer of magnetoresistive element becomes the regulation angle of 45 degree with the direction of magnetization of permanent magnet film.
Under the situation that does not break away from its spirit or essential feature, can realize the present invention by various forms, therefore described embodiment has been the effect that illustrates and do not have restricted, because invention scope defines according to appended claims, rather than define according to the specification of front, so claim is intended to comprise and falls in claim border and the scope or all changes of the equivalence of described border and scope.
The application requires the priority of Japanese patent application No.2002-304392 and Japanese patent application No.2003-65200, at this in conjunction with its content for your guidance.
Claims (17)
1. magnetic inductor comprises:
Substrate (2);
At least one magnetoresistive element (31) that on this substrate, forms; And
At least one pair of the permanent magnet film (32) that connects described magnetoresistive element two ends, so that can detect the intensity of external magnetic field according to the magneto resistance effect of described magnetoresistive element,
The direction of magnetization of the nailed layer of wherein said magnetoresistive element (PD) and the longitudinal direction of described magnetoresistive element regulation angle at 45.
2. magnetic inductor comprises:
Substrate (2);
At least one magnetoresistive element (31) that on this substrate, forms; And
At least one pair of the permanent magnet film (32) that connects described magnetoresistive element two ends, so that can detect the intensity of external magnetic field according to the magneto resistance effect of described magnetoresistive element,
The direction of magnetization of the nailed layer of wherein said magnetoresistive element (PD) and the direction regulation angle at 45 of magnetizing described permanent magnet film.
3. magnetic inductor as claimed in claim 1, wherein basic identical by the direction of magnetization of the permanent magnet film after the direction of magnetization of the nailed layer of pinning layer (PN) pinning and the magnetization in the orderly heat treated of magnetoresistive element.
4. magnetic inductor as claimed in claim 2, wherein basic identical by the permanent magnet film direction of magnetization after the direction of magnetization of the nailed layer of pinning layer (PN) pinning and the magnetization in the orderly heat treated of magnetoresistive element.
5. as claim 1 or 3 described magnetic inductors, wherein the longitudinal direction of the free layer (F) of the direction of magnetization of the permanent magnet film after the magnetization and this magnetoresistive element is basic identical.
6. as claim 2 or 4 described magnetic inductors, wherein the longitudinal direction of the free layer (F) of the direction of magnetization of the permanent magnet film after the magnetization and this magnetoresistive element is basic identical.
7. magnetic inductor comprises:
Quartz substrate (2) with approximate square shape;
The first X-axis GMR element (11,12), it is arranged on perpendicular near first limit of the quartz substrate of X-axis, and this first limit is inclined to predetermined angular relatively;
The second X-axis GMR element (13,14), it be arranged on relative with this first limit and second limit perpendicular to the quartz substrate of X-axis near, and this second limit is inclined to predetermined angular relatively;
The first Y-axis GMR element (21,22), it is arranged near the 3rd limit perpendicular to the quartz substrate of Y-axis, and becomes predetermined angular with the 3rd limit;
The second Y-axis GMR element (23,24), it be arranged on relative with the 3rd limit and the 4th limit perpendicular to the quartz substrate of Y-axis near, and become predetermined angular with the 4th limit;
First pair of permanent magnet film (32) is connected to the two ends of this first X-axis GMR element, and arranges with the first limit parallel longitudinal direction of this quartz substrate;
Second pair of permanent magnet film (32) is connected to the two ends of this second X-axis GMR element, and arranges with the second limit parallel longitudinal direction of this quartz substrate;
The 3rd pair of permanent magnet film (32) is connected to the two ends of this first Y-axis GMR element, and arranges with the 3rd limit parallel longitudinal direction of this quartz substrate; And
The 4th pair of permanent magnet film (32) is connected to the two ends of this second Y-axis GMR element, and arranges with the 4th limit parallel longitudinal direction of this quartz substrate.
8. magnetic inductor as claimed in claim 7, wherein this predetermined angular is set to 45 °.
9. magnetic inductor comprises:
Quartz substrate (2) with approximate square shape;
The first X-axis GMR element (51,52), be arranged near with first limit that is parallel to the quartz substrate vertical with X-axis;
The second X-axis GMR element (53,54), be arranged near with second limit that is parallel to the quartz substrate relative and vertical with X-axis with this first limit;
The first Y-axis GMR element (61,62), be arranged near with the 3rd limit that is parallel to the quartz substrate vertical with Y-axis;
The second Y-axis GMR element (23,24), be arranged near with the 4th limit that is parallel to relative with the 3rd limit and vertical quartz substrate with Y-axis;
First pair of permanent magnet film (32) connects the two ends of this first X-axis GMR element and arranges with the first limit parallel longitudinal direction of this quartz substrate;
Second pair of permanent magnet film (32) connects the two ends of this second X-axis GMR element and arranges with the second limit parallel longitudinal direction of this quartz substrate;
The 3rd pair of permanent magnet film (32) connects the two ends of this first Y-axis GMR element and arranges with the 3rd limit parallel longitudinal direction of this quartz substrate; And
The 4th pair of permanent magnet film (32) connects the two ends of this second Y-axis GMR element and arranges with the 4th limit parallel longitudinal direction of this quartz substrate.
10. magnetic inductor comprises:
Quartz substrate (2) with approximate square shape;
X-axis GMR element (53,54), be arranged near with first limit that is parallel to the quartz substrate vertical with X-axis;
Y-axis GMR element (61,62), be arranged near with second limit that is parallel to the quartz substrate vertical with Y-axis;
First pair of permanent magnet film (32) connects the two ends of this X-axis GMR element and be arranged in parallel with first limit of this quartz substrate; With
Second pair of permanent magnet film (32) connects the two ends of this Y-axis GMR element and be arranged in parallel with second limit of this quartz substrate.
11. magnetic inductor as claimed in claim 7, wherein by using at least four permanent magnets (45) to magnetize described permanent magnet film, described four permanent magnets are set to conform to four angles of this quartz substrate so that adjacent permanent polarity is different each other.
12. magnetic inductor as claimed in claim 9, wherein by using at least three permanent magnets (68) to magnetize described permanent magnet film, described three permanent magnets are arranged on the diagonal and two diagonal angles of quartz substrate so that adjacent permanent polarity is different each other.
13. magnetic inductor as claimed in claim 9, wherein magnetize described permanent magnet film by at least three permanent magnets (68) that use identical polar, one of them permanent magnet is arranged on the diagonal of this quartz substrate, other two permanent magnets have certain distance with two diagonal angles of this quartz substrate respectively, so that the distance between the adjacent permanent is set to equal the catercorner length of this quartz substrate.
14. magnetic inductor as claimed in claim 10 wherein magnetizes this permanent magnet film by the magnetic field along the diagonal effect of this quartz substrate.
15. the manufacture method of a magnetic inductor comprises step:
Go up formation a plurality of permanent magnet films (32) at substrate (41);
Form a plurality of Spin Valve films that each is made up of pinning layer (PN), nailed layer (PD) and free layer (F);
Pinning layer is carried out orderly heat treated;
Pattern forms described a plurality of spin valve layer to form a plurality of magnetoresistive elements (31), wherein arrange described a plurality of magnetoresistive element so that described a plurality of permanent magnet film in pairs and be connected respectively to the two ends of described magnetoresistive element; And
Magnetize described a plurality of water magnet film of a specified duration,
Wherein use magnet array to carry out orderly heat treated, a plurality of permanent magnets (45) in the magnet array are set to respectively conform to four angles of substrate unit (2) so that adjacent permanent polarity is different each other, heated substrate then, and
Wherein do not change the relative position of each other concerns and magnetizes described a plurality of permanent magnet film by on magnet array substrate being set.
16. the manufacture method of a magnetic inductor comprises step:
Go up formation a plurality of permanent magnet films (32) at substrate (41);
Form a plurality of Spin Valve films that each is made up of pinning layer (PN), nailed layer (PD) and free layer (F);
Pinning layer is carried out orderly heat treated;
Pattern forms a plurality of spin valve layers to form a plurality of magnetoresistive elements (31), wherein arrange described a plurality of magnetoresistive element so that described a plurality of permanent magnet film in pairs and be connected respectively to the two ends of described magnetoresistive element; And
Magnetize described a plurality of permanent magnet film,
Wherein, heat the method for this substrate then and carry out orderly heat treated by arranging substrate so that the direction of magnetization is mated the diagonal of substrate unit (2) substantially, and
Wherein magnetize described a plurality of permanent magnet film by substrate is set on magnet array, a plurality of permanent magnets (68) in the described magnet array are provided so that adjacent permanent, and polarity is different each other.
17. the manufacture method of a magnetic inductor comprises step:
Go up formation a plurality of permanent magnet films (32) at substrate (41);
Form a plurality of Spin Valve films that each is made up of pinning layer (PN), nailed layer (PD) and free layer (F);
Pinning layer is carried out orderly heat treated;
Pattern forms a plurality of spin valve layers to form a plurality of magnetoresistive elements (31), wherein arrange described a plurality of magnetoresistive element so that described a plurality of permanent magnet film in pairs and be connected respectively to the two ends of described magnetoresistive element; And
Magnetize described a plurality of permanent magnet film,
Wherein by arranging this substrate so that the direction of magnetization is mated the diagonal of substrate unit (2) substantially, heat the method for this substrate then and carry out orderly heat treated, and
Wherein by arranging this substrate so that the direction of magnetization is mated the diagonal of substrate unit substantially, magnetize described a plurality of permanent magnet film.
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002304392 | 2002-10-18 | ||
| JP304392/02 | 2002-10-18 | ||
| JP304392/2002 | 2002-10-18 | ||
| JP065200/03 | 2003-03-11 | ||
| JP065200/2003 | 2003-03-11 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200710007269.2A Division CN101034730A (en) | 2002-10-18 | 2003-10-16 | Manufacturing method for magnetic sensor |
| CN200710007270.5A Division CN101034731A (en) | 2002-10-18 | 2003-10-16 | Magnetic sensor |
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| Publication Number | Publication Date |
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| CN1497749A true CN1497749A (en) | 2004-05-19 |
| CN100429799C CN100429799C (en) | 2008-10-29 |
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| CN200710007269.2A Pending CN101034730A (en) | 2002-10-18 | 2003-10-16 | Manufacturing method for magnetic sensor |
| CN200710007270.5A Pending CN101034731A (en) | 2002-10-18 | 2003-10-16 | Magnetic sensor |
| CNB2003101198613A Expired - Fee Related CN100429799C (en) | 2002-10-18 | 2003-10-16 | Magnetic inductor and its manufacturing method |
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| CN200710007269.2A Pending CN101034730A (en) | 2002-10-18 | 2003-10-16 | Manufacturing method for magnetic sensor |
| CN200710007270.5A Pending CN101034731A (en) | 2002-10-18 | 2003-10-16 | Magnetic sensor |
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| JP2000149228A (en) * | 1998-11-05 | 2000-05-30 | Tdk Corp | Manufacturing method for thin film magnetic head |
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2003
- 2003-10-16 CN CN200710007269.2A patent/CN101034730A/en active Pending
- 2003-10-16 CN CN200710007270.5A patent/CN101034731A/en active Pending
- 2003-10-16 CN CNB2003101198613A patent/CN100429799C/en not_active Expired - Fee Related
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| CN100587993C (en) * | 2006-12-26 | 2010-02-03 | 中国科学院合肥物质科学研究院 | Giant magnetoresistance magnetic sensor and its preparation method |
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Also Published As
| Publication number | Publication date |
|---|---|
| CN101034730A (en) | 2007-09-12 |
| CN100429799C (en) | 2008-10-29 |
| CN101034731A (en) | 2007-09-12 |
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