CN100587993C - Giant magnetoresistance magnetic sensor and its preparation method - Google Patents
Giant magnetoresistance magnetic sensor and its preparation method Download PDFInfo
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- CN100587993C CN100587993C CN200610155973A CN200610155973A CN100587993C CN 100587993 C CN100587993 C CN 100587993C CN 200610155973 A CN200610155973 A CN 200610155973A CN 200610155973 A CN200610155973 A CN 200610155973A CN 100587993 C CN100587993 C CN 100587993C
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Abstract
The invention discloses a giant magnetoresistance magnetic sensor and a preparation method thereof. The sensor comprises a substrate (1), an insulating layer (2) on the substrate and a ferromagnetic layer (4) wrapped with a conductive layer (5), particularly, a coil (3) is sleeved outside the ferromagnetic layer (4) wrapped with the conductive layer (5), and the coil (3) and the ferromagnetic layer (4) are wrapped by the insulating layer (2); the method comprises the steps of respectively and repeatedly using a mask, photoetching or ion etching, direct-current magnetron sputtering, radio-frequency magnetron sputtering or plasma enhanced chemical vapor deposition and semiconductor film processing technologies to etch and sputter on a substrate to generate a coil lower layer lead, a lower insulating layer, a magneto-resistance sensor consisting of a ferromagnetic layer, a conductive layer and a ferromagnetic layer, a middle insulating layer, a coil vertical lead, a coil upper layer lead and an upper insulating layer, and electrically connecting the coil lower layer lead, the coil vertical lead and the coil upper layer lead to obtain the giant magneto-resistance magnetic sensor. It has high precision and sensitivity, and is easy for industrial production.
Description
Technical field
The present invention relates to a kind of transducer and method for making, especially giant magnetoresistance Magnetic Sensor and preparation method thereof.
Background technology
Giant magnetoresistance effect is the new phenomenon of finding over nearly 10 years.When passing to constant high-frequency current in the material with giant magnetic effect, outside faint changes of magnetic field just can cause the significant change of material impedance, and its rate of change can be up to more than 50%.Because the magnetic-field-sensitive of giant magnetic resistance excellence, even in the electronic circuit that adds, do not introduce and still can keep stability and the reliability surveyed under the situation of any multiplying arrangement, therefore be applied to the low-intensity magnetic field detector in conjunction with the characteristics of giant magnetoresistance effect high sensitivity, high-responsivity and with it, will improve the accuracy and the accuracy of orientation detection significantly.At present, people are in order to obtain to have the Magnetic Sensor of giant magnetoresistance effect, some trials and effort have been done, as a kind of " based on the magnetosensitive device of soft magnetic multilayer film giant magnetic impedance effect " that discloses among the disclosed Chinese invention patent ublic specification of application CN 1694275A on November 19th, 2005.It is intended to provide a kind of Magnetic Sensor with giant magnetoresistance effect.This magnetosensitive device is made up of silicon substrate, pin, the soft-magnetic multilayer film of meander-like sandwich structure and the permanent magnet of setovering of band silicon dioxide layer, wherein, pin is drawn from the copper layer at multilayer film two ends, and be arranged on the substrate, the soft-magnetic multilayer film of whole meander-like sandwich structure is positioned on the silicon substrate of band silicon dioxide layer, and the biasing permanent magnet is pasted on the back side of magnetosensitive device with epoxy glue.During use, the giant magnetoresistance effect curve of multilayer film is setovered, make magnetosensitive device be operated in the range of linearity by permanent magnet.But, this magnetosensitive device exists weak point, at first, the magnetic field magnetic line that is difficult to make the permanent magnet that is pasted on the magnetosensitive device back side to send strictly is parallel to the plane at multilayer film place, thereby both reduced its sensitivity and test accuracy, can not guarantee the uniform of performance when it becomes bulk article and quality again magnetic responsiveness; Secondly, the rising of environment or working temperature also easily makes the epoxy glue water softening, causes the displacement of permanent magnet, and then influences its sensitivity and accuracy; Once more, abominable workplace, as be in the operational environment of shake or vibrations, permanent magnet is come off, and make its loss of function; At last, as the permanent magnet that bias magnetic field is provided, in case after being pasted on the magnetosensitive device back side, its magnetic field intensity just can't be gone adjustment again, thereby makes the environment for use of magnetosensitive device and the scope of application all be subjected to bigger restriction.
Summary of the invention
The technical problem to be solved in the present invention is for overcoming weak point of the prior art, and a kind of have higher precision and sensitivity, steady quality are provided, and is easy to giant magnetoresistance Magnetic Sensor of suitability for industrialized production and preparation method thereof.
The giant magnetoresistance Magnetic Sensor comprises substrate and the insulating barrier on it, wraps the ferromagnetic layer of conductive layer, and the particularly said ferromagnetic layer that wraps conductive layer is set with coil outward, and said coil and ferromagnetic layer wrap by insulating barrier.
As the further improvement of giant magnetoresistance Magnetic Sensor, described coil is the miniature solenoid that sputtering technology forms, and its length and width and high size are respectively 20～2000 microns, 10～2000 microns and 10～100 microns; The coiling direction of described coil is the sense of current perpendicular to conductive layer; Described substrate is silicon chip or quartz plate or sapphire sheet or silicon carbide plate.
The preparation method of giant magnetoresistance Magnetic Sensor comprises the cleaning of substrate and the mask that carries out thereon, photoetching or ion etching, semiconductive thin film processing technology, particularly it is finished according to the following steps: (a) use mask, photoetching or ion etching technology in the array pattern of scribing layer conductor under the coil on the substrate earlier, re-use magnetically controlled DC sputtering technology splash-proofing sputtering metal material generation coil lower floor wire array thereon; (b) use mask process prior to the both ends of every lead of on-chip coil lower floor wire array, re-use rf magnetron sputtering technology or plasma-reinforced chemical vapor deposition process and on the substrate that is covered with coil lower floor wire array, generates time insulating barrier; (c) use the semiconductive thin film processing technology in generating the magnetic resistance sensor that constitutes by ferromagnetic layer, conductive layer and ferromagnetic layer on the insulating barrier down; (d) use rf magnetron sputtering technology or plasma-reinforced chemical vapor deposition process on the following insulating barrier that is covered with magnetic resistance sensor, generates in insulating barrier, in generation, be used mask process simultaneously in the process of insulating barrier and in the middle insulating barrier that the both ends of every lead of on-chip coil lower floor wire array are located, generate open tubular column; (e) use the open tubular column place splash-proofing sputtering metal material of magnetically controlled DC sputtering technology in middle insulating barrier to generate the vertical lead of coil; (f) use mask, photoetching or ion etching technology on middle insulating barrier, to scribe the array pattern of coil topping wire earlier, re-use magnetically controlled DC sputtering technology thereon the splash-proofing sputtering metal material generate coil topping wire array, and the both ends of every lead of coil topping wire array are electrically connected respectively with the vertical lead of coil in the middle insulating barrier; (g) use rf magnetron sputtering technology or plasma-reinforced chemical vapor deposition process on the middle insulating barrier that is covered with coil topping wire array, to generate insulating barrier, thereby make the giant magnetoresistance Magnetic Sensor.
As the preparation method's of giant magnetoresistance Magnetic Sensor further improvement, the described metal material that uses magnetically controlled DC sputtering technology to generate layer conductor, the vertical lead of coil and coil topping wire under the coil is metallic gold or argent or metallic copper or metallic nickel or its alloy; The width of layer conductor and coil topping wire is 0.5～1.5 micron, thickness and is 0.5～1.5 micron under the described coil; Described insulating barrier, middle insulating barrier and last insulating barrier down are silicon dioxide layer, and wherein, the thickness of following insulating barrier and last insulating barrier is 2～2.5 microns, and the thickness of middle insulating barrier is 8～9.5 microns; Ferromagnet in the described ferromagnetic layer is amorphous or nanocrystalline iron-cobalt-silicon boron (FeCoSiB) or cobalt silicon boron (CoSiB) or iron copper neodymium silicon boron (FeCuNbSiB), and its thickness is 10～100nm; Electric conductor in the described conductive layer is metallic gold or argent or metallic copper or metallic nickel or its alloy, and its thickness is 10～100nm.
Beneficial effect with respect to prior art is, one, be set in the outer coil of ferromagnetic layer that wraps conductive layer, can be for by ferromagnetic layer, the magnetic resistance sensor that conductive layer and ferromagnetic layer constitute provides bias magnetic field, can make the magnetic line of force in its magnetic field of sending accurately be parallel to magnetic resistance sensor again, also can not be subjected to self or external influence and make and between itself and magnetic resistance sensor any relative displacement takes place, also be easy to simultaneously by adjusting coil current, easily its magnetic field intensity of sending is regulated, and then the applicability of magnetic resistance sensor is increased widely.Greatly improved sensitivity and the test accuracy of magnetic resistance sensor, stablized its performance and quality widely, very easily in industrialized production magnetic responsiveness; They are two years old, after the Magnetic Sensor test of the present invention that makes, by test result, be resistance as can be known with the change curve of external magnetic field, magnetoresistive ratio is near 100%, shown higher giant magnetoresistance effect, after being added with certain bias magnetic field in advance thereon, if exist the direction of the less externally-applied magnetic field of another one identical with the direction of bias magnetic field, the magneto-resistor of Magnetic Sensor of the present invention will increase, otherwise magneto-resistor reduces, and has confirmed it and has had the performance that external magnetic-field direction height sensitivity is distinguished; Its three, preparation method's science, rationally, and simple and convenient, effect is significantly, easily grasp, and is convenient to industrializing implementation.
Further embodiment as beneficial effect, the one, coil is the miniature solenoid that adopts sputtering technology to form, its length and width and high size are respectively 20～2000 microns, 10～2000 microns and 10～100 microns, make it not only have compact conformation, characteristics that volume is little, advantage low in energy consumption, that cost of manufacture is also low is also arranged; The 2nd, the coiling direction of coil adopts the sense of current perpendicular to conductive layer, remove and be easy to adjust coil, outside making magnetic power that its magnetic field sends and magnetic resistance sensor being accurately parallel, between the magnetic line of force in the magnetic field that produces when also the magnetic line of force that sends because of its magnetic field and conductive layer electric current flow is in vertical state, this moment, between the two interaction force maximum and was able to obtain with the input of minimum maximum bias; The 3rd, substrate is selected silicon chip or quartz plate or sapphire sheet or silicon carbide plate for use, makes the source of substrate raw material wide and be easy to get; The 4th, the width of layer conductor and coil topping wire is all elected 0.5～1.5 micron, thickness as and is all elected 0.5～1.5 micron as, the needs to its through-current capacity when having satisfied coil working fully under the coil; The 5th, following insulating barrier, middle insulating barrier and last insulating barrier are all selected silicon dioxide layer for use, and its thickness only is 2～9.5 microns, have both satisfied the requirement of the class of insulation, and the low characteristics of cost of manufacture are arranged again.
Description of drawings
Below in conjunction with accompanying drawing optimal way of the present invention is described in further detail.
Fig. 1 is a kind of basic structure schematic diagram of the present invention;
Fig. 2 tests the curve chart of the resistance of back acquisition with the external magnetic field variation to the Magnetic Sensor of the present invention that makes, and the condition during test is that temperature is 25 ℃, and the drive current frequency is 1MHz, and the mould coordinate among the figure is an externally-applied magnetic field, and ordinate is a magnetic resistance.By test result as can be known, the rate of change of magneto-resistor has shown higher giant magnetoresistance effect near 100%; The A place is shown among the figure, when after being added with certain bias magnetic field in advance on the Magnetic Sensor of the present invention, if exist the direction of the less externally-applied magnetic field of another one identical with the direction of bias magnetic field, then the magneto-resistor of Magnetic Sensor of the present invention will increase, otherwise, reduction to a certain degree will take place in magneto-resistor, thereby confirm Magnetic Sensor of the present invention under the effect of bias magnetic field, have the height sensitivity property distinguished to external magnetic-field direction;
Fig. 3 is a preparation method's of the present invention process schematic diagram.
Embodiment
Referring to Fig. 1, constituting of giant magnetoresistance Magnetic Sensor is equipped with insulating barrier 2 and coil 3 on the substrate 1, be set with the ferromagnetic layer 4 that is wrapping conductive layer 5 in the coil 3.Wherein, substrate 1 is a silicon chip.The thickness of ferromagnetic layer 4 is 10nm, and the ferromagnet in the ferromagnetic layer 4 adopts the iron-cobalt-silicon boron (FeCoSiB) of amorphous.The thickness of conductive layer 5 is 10nm, and the electric conductor in the conductive layer 5 is selected metallic copper for use.The miniature solenoid that coil 3 forms for sputtering technology, layer conductor 31, the vertical lead 32 of coil are connected with coil topping wire 33 and form under its coil that is obtained through sputtering technology by metallic copper, and the width of layer conductor 31 and coil topping wire 33 is 0.5 micron, thickness and is 0.5 micron under the coil wherein; The coiling direction of coil 3 is the sense of current perpendicular to conductive layer 5, and its length and width and high size are respectively 80 microns, 80 microns and 50 microns.Insulating barrier 2 is a silicon dioxide layer, and coil 3 and ferromagnetic layer 4 are all wrapped by this silicon dioxide layer; This silicon dioxide layer all is made up of following insulating barrier, middle insulating barrier and last insulating barrier, and the following insulating barrier wherein and the thickness of last insulating barrier are 2 microns, and the thickness of middle insulating barrier is 8 microns.
Referring to Fig. 2 and Fig. 3, the preparation method of giant magnetoresistance Magnetic Sensor is, at first make or buy business-like metallic gold from market with conventional method, argent, metallic copper, metallic nickel and its alloy, silicon dioxide, amorphous or nanocrystalline iron-cobalt-silicon boron (FeCoSiB), cobalt silicon boron (CoSiB) and iron copper neodymium silicon boron (FeCuNbSiB), then, finish preparation according to the following steps successively: a) use mask earlier, photoetching (or ion etching) technology is in the array pattern of scribing layer conductor 31 under the coil on the substrate, re-use magnetically controlled DC sputtering technology thereon splash-proofing sputtering metal material metal copper generate layer conductor 31 arrays under the coil as shown in Fig. 3 (a) figure; Wherein, the width of layer conductor 31 is that 0.5 (can be 0.5～1.5) micron, thickness are 0.5 (can be 0.5～1.5) micron under the coil.B) use mask process prior to the both ends of every lead of layer conductor 31 arrays under the on-chip coil, re-use rf magnetron sputtering (or plasma-reinforced chemical vapor deposition) technology and on the substrate that is covered with layer conductor 31 arrays under the coil, generate insulating barrier down; Wherein, following insulating barrier is a silicon dioxide layer, and thickness is 2 (can be 2～2.5) microns, and the place, both ends of every lead of layer conductor 31 arrays leaves open tubular column 30 as shown in Fig. 3 (b) figure under the corresponding coil in insulating barrier down.C) use the semiconductive thin film processing technology on insulating barrier down, to generate the magnetic resistance sensor that constitutes by ferromagnetic layer, conductive layer and ferromagnetic layer as shown in Fig. 3 (b) figure; Wherein, the ferromagnet in the ferromagnetic layer is nanocrystalline iron-cobalt-silicon boron (FeCoSiB), and its thickness is 10 (can be 10～100) nm, and the electric conductor in the conductive layer is a metallic copper, and its thickness is 10 (can be 10～100) nm.D) use rf magnetron sputtering (or plasma-reinforced chemical vapor deposition) technology on the following insulating barrier that is covered with magnetic resistance sensor, generates in insulating barrier, in generation, be used the open tubular column 30 of generation as shown in Fig. 3 (c) figure in the middle insulating barrier at place, both ends of mask process every lead of layer conductor 31 arrays under on-chip coil simultaneously in the process of insulating barrier; Wherein, middle insulating barrier is a silicon dioxide layer, and thickness is 8 (can be 8～9.5) microns.E) use open tubular column 30 places splash-proofing sputtering metal material metal copper generation the coil vertical lead 32 as Fig. 3 (d) figure as shown in of magnetically controlled DC sputtering technology in middle insulating barrier.F) use mask, photoetching (or ion etching) technology on middle insulating barrier, to scribe the array pattern of coil topping wire 33 earlier, re-use magnetically controlled DC sputtering technology thereon splash-proofing sputtering metal material metal copper generate coil topping wire 33 arrays as shown in Fig. 3 (e) figure, and the both ends of every lead of coil topping wire 33 arrays are electrically connected respectively with the vertical lead 32 of coil in the middle insulating barrier; Wherein, the width of coil topping wire 33 is that 0.5 (can be 0.5～1.5) micron, thickness are 0.5 (can be 0.5～1.5) micron.G) use rf magnetron sputtering (or plasma-reinforced chemical vapor deposition) technology on the middle insulating barrier that is covered with coil topping wire 33 arrays, to generate insulating barrier; Wherein, last insulating barrier is a silicon dioxide layer, and thickness is 2 (can be 2～2.5) microns.Thereby make the giant magnetoresistance Magnetic Sensor shown in curve among Fig. 1 and Fig. 3 (f) figure and Fig. 2.
Select amorphous in metallic gold in the metal material or argent or metallic nickel or its alloy, silicon dioxide, the ferromagnet or nanocrystalline cobalt silicon boron (CoSiB) or iron copper neodymium silicon boron (FeCuNbSiB) more respectively for use, repeat the process of above-mentioned preparation, make the giant magnetoresistance Magnetic Sensor shown in curve among Fig. 1 and Fig. 3 (f) figure and Fig. 2 equally.
Obviously, those skilled in the art can carry out various changes and modification to giant magnetoresistance Magnetic Sensor of the present invention and preparation method thereof and not break away from the spirit and scope of the present invention.Like this, if of the present invention these are revised and modification belongs within the scope of claim of the present invention and equivalent technologies thereof, then the present invention also is intended to comprise these changes and modification interior.
Claims (6)
1, a kind of giant magnetoresistance Magnetic Sensor comprises substrate (1) and the insulating barrier on it (2), wraps the ferromagnetic layer (4) of conductive layer (5), it is characterized in that:
The described outer coil (3) that is set with of ferromagnetic layer (4) that wraps conductive layer (5), the miniature solenoid that described coil (3) forms for sputtering technology, and its coiling direction is the sense of current perpendicular to conductive layer (5), wherein, coil (3) is by layer conductor under the coil (31), the vertical lead of coil (32) composition that is connected with coil topping wire (33), and the width of layer conductor under the coil (31) and coil topping wire (33) and thickness are 0.5～1.5 micron, miniature solenoidal length, wide, high size is respectively 20～2000 microns, 10～2000 microns and 10～100 microns;
Described coil (3) and ferromagnetic layer (4) all are insulated layer (2) and wrap, this insulating barrier (2) is a silicon dioxide layer, it is by insulating barrier, middle insulating barrier and last insulating barrier are formed down, and silicon dioxide layer is formed by rf magnetron sputtering or plasma-reinforced chemical vapor deposition process, and its thickness is 2～9.5 microns.
2, giant magnetoresistance Magnetic Sensor according to claim 1 is characterized in that substrate (1) is silicon chip or quartz plate or sapphire sheet or silicon carbide plate.
3, a kind of preparation method who is used for giant magnetoresistance Magnetic Sensor as claimed in claim 1 comprises the cleaning of substrate and the mask that carries out thereon, photoetching or ion etching, semiconductive thin film processing technology, it is characterized in that finishing according to the following steps:
A, elder generation use mask, photoetching or ion etching technology in the array pattern of scribing layer conductor under the coil on the substrate, re-use magnetically controlled DC sputtering technology splash-proofing sputtering metal material generation coil lower floor wire array thereon;
B, use mask process, re-use rf magnetron sputtering technology or plasma-reinforced chemical vapor deposition process and on the substrate that is covered with coil lower floor wire array, generates time insulating barrier prior to the both ends of every lead of on-chip coil lower floor wire array;
C, use semiconductive thin film processing technology are in generating the magnetic resistance sensor that is made of ferromagnetic layer, conductive layer and ferromagnetic layer on the insulating barrier down;
D, use rf magnetron sputtering technology or plasma-reinforced chemical vapor deposition process on the following insulating barrier that is covered with magnetic resistance sensor, generates in insulating barrier, in generation, be used mask process simultaneously in the process of insulating barrier and in the middle insulating barrier that the both ends of every lead of on-chip coil lower floor wire array are located, generate open tubular column;
E, the open tubular column place splash-proofing sputtering metal material of use magnetically controlled DC sputtering technology in middle insulating barrier generate the vertical lead of coil;
F, elder generation use mask, photoetching or ion etching technology to scribe the array pattern of coil topping wire on middle insulating barrier, re-use magnetically controlled DC sputtering technology thereon the splash-proofing sputtering metal material generate coil topping wire array, and the both ends of every lead of coil topping wire array are electrically connected respectively with the vertical lead of coil in the middle insulating barrier;
G, use rf magnetron sputtering technology or plasma-reinforced chemical vapor deposition process generate insulating barrier on the middle insulating barrier that is covered with coil topping wire array, thereby make the giant magnetoresistance Magnetic Sensor.
4, the preparation method of giant magnetoresistance Magnetic Sensor according to claim 3 is characterized in that using magnetically controlled DC sputtering technology to generate the alloy of the metal material of layer conductor, the vertical lead of coil and coil topping wire under the coil as metallic gold or argent or metallic copper or metallic nickel or above-mentioned metal.
5, the preparation method of giant magnetoresistance Magnetic Sensor according to claim 3 is characterized in that the ferromagnet in the ferromagnetic layer is amorphous or nanocrystalline iron-cobalt-silicon boron or cobalt silicon boron or iron copper neodymium silicon boron, and its thickness is 10～100nm.
6, the preparation method of giant magnetoresistance Magnetic Sensor according to claim 3 is characterized in that the electric conductor in the conductive layer is the alloy of metallic gold or argent or metallic copper or metallic nickel or above-mentioned metal, and its thickness is 10～100nm.
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| CN113981334B (en) * | 2021-11-02 | 2022-04-26 | 浙江大学 | Amorphous wire planar structure with ultrahigh magnetic impedance and sensing application thereof |
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| RU2784394C1 (en) * | 2021-12-30 | 2022-11-24 | Федеральное государственное бюджетное учреждение науки Институт физики металлов имени М.Н. Михеева Уральского отделения Российской академии наук (ИФМ УрО РАН) | METHOD FOR PRODUCING A GIANT MICROWAVE MAGNETORESISTIVE EFFECT IN A (CoFe)/Cu SUPERLATTICE |
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| CN101212017A (en) | 2008-07-02 |
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