CN1487594A - 高压p型金属氧化物半导体管 - Google Patents

高压p型金属氧化物半导体管 Download PDF

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CN1487594A
CN1487594A CNA021383936A CN02138393A CN1487594A CN 1487594 A CN1487594 A CN 1487594A CN A021383936 A CNA021383936 A CN A021383936A CN 02138393 A CN02138393 A CN 02138393A CN 1487594 A CN1487594 A CN 1487594A
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oxygen
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CN1234174C (zh
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孙伟锋
宋慧滨
陆生礼
时龙兴
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Jiangsu Kuize Machinery Industrial Co., Ltd.
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Southeast University
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H01L29/7835—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's with asymmetrical source and drain regions, e.g. lateral high-voltage MISFETs with drain offset region, extended drain MISFETs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/402—Field plates
    • H01L29/404—Multiple field plate structures

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  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

本实用新型公开了一种高压P型金属氧化物半导体管，由源、漏、栅、场氧、栅氧和氧化层组成，栅氧设在源、漏和场氧上，在栅氧的下方设有N型外延接触孔，栅位于栅氧与氧化层之间，在栅、源和漏上设有铝引线，在场氧及漏的下方设有P型漂移区，源、P型漂移区和场氧设在P型衬底上，在源上连接有场极板。本发明引入了场极板且场极板与源相连，场极板可获得电源电位即高电压，而场极板上的电压越高，由于场极板的作用而在硅表面形成的耗尽区越大，故其削弱表面峰值电场效果越好，从而提高其击穿电压。

Description

高压P型金属氧化物半导体管
一、技术领域
本发明是一种金属氧化物半导体管，尤其是高压P型金属氧化物半导体管。
二、背景技术
金属氧化物半导体型功率集成器件具有开关特性好、功耗小等优点，更为重要的是金属氧化物半导体型功率器件易于兼容标准低压互补金属氧化物半导体工艺，降低芯片的生产成本，因此在10V-600V的应用范围内金属氧化物半导体型功率集成器件具有较大的优势。在金属氧化物半导体型功率集成器件中以横向双扩散、偏置栅等结构较多，虽然对器件结构进行了改进，在一定程度上提高了击穿特性，但带来的结果是金属氧化物半导体器件的结构变得越来越复杂，制备成本也越来越高，成品率降低。
三、技术内容
技术问题  本发明提供一种能够提供其击穿特性且制造成本低的高压P型金属氧化物半导体管。
技术方案  一种高压P型金属氧化物半导体管，由源2、漏3、栅4、场氧6、栅氧7和氧化层8组成，栅氧7设在源2、漏3和场氧6上，在栅氧7的下方设有N型外延接触孔91，栅4位于栅氧7与氧化层8之间，在栅4、源2和漏3上设有铝引线，在场氧6及漏3的下方设有P型漂移区31，源2、P型漂移区31和场氧6设在P型衬底1上，在源2上连接有场极板5。
有益效果  (1)本发明引入了场极板且场极板与源相连，场极板可获得电源电位即高电压，而场极板上的电压越高，由于场极板的作用而在硅表面形成的耗尽区越大，故其削弱表面峰值电场效果越好，从而提高其击穿电压。本发明可以基于1.2μm标准外延低压互补金属氧化物半导体工艺线上实现，这使其制造成本低。(2)由于本发明的场极板设在氧化层与栅氧之间，使场极板的制作可以与栅的制作同步完成，况且本发明可以基于1.2μm标准外延低压互补金属氧化物半导体工艺线上实现，故本发明具有制造成本低的优点。(3)N型外延材料与体硅材料相比可以提供更好的击穿特性。
四、附图说明
图1是本实施例的结构示意图。
五、具体实施方案
一种高压P型金属氧化物半导体管，由源2、漏3、栅4、场氧6、栅氧7和氧化层8组成，栅氧7设在源2、漏3和场氧6上，在栅氧7的下方设有N型外延接触孔91，栅4位于栅氧7与氧化层8之间，在栅4、源2和漏3上设有铝引线，在场氧6及漏3的下方设有P型漂移区31，源2、P型漂移区31和场氧6设在P型衬底1上，在源2上连接有场极板5，场极板5设在氧化层8与栅氧7之间且位于场氧6的上方，在P型衬底1与源2、漏3及场氧6之间设有N型外延9。

Claims (3)

1、一种高压P型金属氧化物半导体管，由源(2)、漏(3)、栅(4)、场氧(6)、栅氧(7)和氧化层(8)组成，栅氧(7)设在源(2)、漏(3)和场氧(6)上，在栅氧(7)的下方设有N型外延接触孔(91)，栅(4)位于栅氧(7)与氧化层(8)之间，在栅(4)、源(2)和漏(3)上设有铝引线，在场氧(6)及漏(3)的下方设有P型漂移区(31)，源(2)、P型漂移区(31)和场氧(6)设在P型衬底(1)上，其特征在于在源(2)上连接有场极板(5)。
2、根据权利要求1所述的高压P型金属氧化物半导体管，其特征在于场极板(5)设在氧化层(8)与栅氧(7)之间且位于场氧(6)的上方。
3、根据权利要求1或2所述的高压N型横向双扩散金属氧化物半导体管，其特征在于在P型衬底(1)与源(2)、漏(3)及场氧(6)之间设有N型外延(9)。
CNB021383936A 2002-09-30 2002-09-30 高压p型金属氧化物半导体管 Expired - Fee Related CN1234174C (zh)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1324717C (zh) * 2004-06-24 2007-07-04 东南大学 多电位场极板横向高压n型金属氧化物半导体管
WO2011125036A1 (en) 2010-04-06 2011-10-13 Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof
CN102751195A (zh) * 2011-07-18 2012-10-24 成都芯源系统有限公司 横向晶体管及其制作方法
CN103579313A (zh) * 2012-08-10 2014-02-12 上海华虹Nec电子有限公司 提高高压ldmos器件击穿电压的结构
CN107680997A (zh) * 2017-10-30 2018-02-09 济南大学 带有可调型场板的横向双扩散金属氧化物半导体场效应管
CN111180504A (zh) * 2018-11-13 2020-05-19 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制造方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1324717C (zh) * 2004-06-24 2007-07-04 东南大学 多电位场极板横向高压n型金属氧化物半导体管
WO2011125036A1 (en) 2010-04-06 2011-10-13 Faculdade De Ciências E Tecnologia Da Universidade Nova De Lisboa P-type oxide alloys based on copper oxides, tin oxides, tin-copper alloy oxides and metal alloy thereof, and nickel oxide, with embedded metals thereof, fabrication process and use thereof
CN102751195A (zh) * 2011-07-18 2012-10-24 成都芯源系统有限公司 横向晶体管及其制作方法
CN103579313A (zh) * 2012-08-10 2014-02-12 上海华虹Nec电子有限公司 提高高压ldmos器件击穿电压的结构
CN107680997A (zh) * 2017-10-30 2018-02-09 济南大学 带有可调型场板的横向双扩散金属氧化物半导体场效应管
CN107680997B (zh) * 2017-10-30 2020-04-14 济南大学 带有可调型场板的横向双扩散金属氧化物半导体场效应管
CN111180504A (zh) * 2018-11-13 2020-05-19 无锡华润上华科技有限公司 横向扩散金属氧化物半导体器件及其制造方法

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