CN1484007A

CN1484007A - High-temp resisting petroleum downhole dynamic pressure sensor

Info

Publication number: CN1484007A
Application number: CNA031344488A
Authority: CN
Inventors: 赵玉龙; 蒋庄德; 赵立波
Original assignee: Xian Jiaotong University
Current assignee: Xian Jiaotong University
Priority date: 2003-07-31
Filing date: 2003-07-31
Publication date: 2004-03-24
Anticipated expiration: 2023-07-31
Also published as: CN1172170C

Abstract

The invention discloses a high-temperature resistant downhole micro-dynamic pressure or micro-flow sensor, composed of elastic component, primary protective cover board, secondary protective cover board, SOI silicon micro-solid piezoresistive chip and connecting screw, the former three things linked together by the screw, the elastic component designed into the cantilever girder which is set with the SOI silicon micro-solid piezoresistive chip, whose top is set inside the protective cover board and whose under part outside the protective cover board extends through into the channel with the fluid. It changes the length, width and thickness of the girder to resolve the measuring problem. It has characters of good dynamic property, high-temperature resistance and high measuring precision.

Description

Dynamic pressure transducer under the high temperature resistant oil well

Technical field

The present invention relates to a kind of pressure transducer, particularly a kind of high temperature resistant dynamic pressure or microflow sensor that uses in the down-hole.

Background technology

Known oil gas well pressure test macro roughly has two kinds, a kind of is to be the oil gas well pressure test macro of core with volute spring tubular type pressure gauge, the measuring accuracy of this type instrument is lower, range ability is narrower and Applicable temperature below 200 ℃, can not satisfy the measurement requirement of oil gas well; Second kind is to be the modern oil gas well pressure test macro of core with the memory electronic pressure gauge, this pressure gauge generally adopts silicon-sapphire or quartz to make sensitive element, and used the integrated circuit (IC) design technology, characteristics with small size, large storage capacity, major parameter can satisfy the test needs of the oil gas well of 130 ℃ of reservoir depth 3500m and temperature substantially, but along with the increase of reservoir depth, the rising of temperature, this type systematic has not satisfied the needs that modern oil gas well down-hole pressure is measured.Owing to be subjected to the restriction of test macro resistance to elevated temperatures and volume, add the slight change of the temperature and pressure of tested object-oil gas well, the test macro of different test purposes has nothing in common with each other, as the steam stimulation oil well, its underground work temperature reaches about 230 ℃, the producing well of some special exploitation mode even can't test.

Summary of the invention

The purpose of this invention is to provide dynamic pressure transducer under a kind of high temperature resistant oil well, with the increase of solution along with reservoir depth, under the situation that the rising of temperature and flow are little or pressure is low, the problem that oil gas well down-hole pressure is difficult to measure.

The present invention realizes as follows: the present invention is mainly by flexible member; the main protection cover plate; little solid-state pressure drag chip of inferior cover sheet and SOI silicon and attachment screw are formed; flexible member and main protection cover plate; inferior cover sheet links together by screw; flexible member is designed to the semi-girder form; promptly one downward semi-girder is arranged in the design of the lower right of flexible member; the little solid-state pressure drag chip of SOI silicon is bonded on the flexible member by eutectic welding or other packaging technologies; the semi-girder top that the little solid-state pressure drag chip of SOI silicon is housed is installed in the cover sheet; feed by cover sheet and the bottom that is suspended in the semi-girder of cover sheet outside and to have in the pipeline of fluid, this pressure transducer by screw retention on pipeline.

The little solid-state pressure drag chip of silicon of the present invention adopts the manufacturing of SOI technology, has resistant to elevated temperatures characteristics; Be engraved on the resistor stripe that bridge circuit on the little solid-state pressure drag chip of SOI silicon adopts five folded structures, be the embossment shape and protrude on chip, have advantage highly sensitive when detecting; Carry out gold-plated processing at the back side of chip itself and flexible member are bonded together better, and adopted titanium-platinum-Jin beam type high temperature lead-in wire, drawn electric signal.This chip can be operated under 200-400 ℃ the hot conditions, has solved the influence that has leakage current under hot conditions,

In the time of in working order, when fluid flows with certain pressure or particularly minute-pressure power of flow, will exert pressure in the semi-girder bottom of flexible member, at this moment, semi-girder produces distortion, and the little solid-state pressure drag chip of SOI silicon that is fixed together with semi-girder top also changes and sends electric signal, thereby measures the variation of hydrodynamic pressure, because this transducer sensitivity is higher, the pressure survey requirement under the relatively poor environment such as satisfied under deep-well high temperature, pressure is low and flow is little.

Description of drawings

Fig. 1 is a structure principle chart of the present invention;

Fig. 2 is that the present invention is at ducted scheme of installation;

Fig. 3 is elastic element structure figure of the present invention, and wherein Fig. 3 (a) is a front view, and Fig. 3 (b) is a view for A;

Fig. 4 is the bridge circuit figure of the little solid-state pressure drag chip of SOI silicon of the present invention, and wherein Fig. 4 (a) is a front view, and Fig. 4 (b) is the B-B view.

Specific embodiments

The present invention is described in further detail below in conjunction with accompanying drawing.

According to Fig. 1, sensor is by flexible member 2, main protection cover plate 3, inferior cover sheet 7, the little solid-state pressure drag chip 5 of SOI silicon, high temperature circuit plate 6 and high temperature transfer wire 4 are formed, flexible member 2 and main protection cover plate 3, inferior cover sheet 7 links together by screw 8, flexible member 2 is designed to T shape cantilever beam structure form, promptly one downward semi-girder 2 (1) is arranged in the design of the lower right of flexible member 2, upper design at flexible member 2 semi-girders 2 (1) has a step, the little solid-state pressure drag chip 5 of SOI silicon is bonded in the step below of flexible member 2 semi-girders 2 (1) by eutectic welding or other packaging technologies, draw Herba Anoectochili roxburghii to high temperature circuit plate 6 by sealed in units such as gold wire bonders from the little solid-state pressure drag chip 5 of SOI silicon, link to each other with high temperature wire 4 again, thereby draw electric signal; The top that flexible member 2 semi-girders 2 (1) of the little solid-state pressure drag chip 5 of SOI silicon are housed is installed in cover sheet 3 and 7, and the bottom of flexible member 2 semi-girders 2 (1) is by cover sheet 3 and 7 and be suspended in the cover sheet outside.The cover sheet 3 of this pressure transducer is designed to S shape, has a hole in the centre of S shape, and to connect high temperature wire 4, cover sheet 7 is designed to L shaped.

According to Fig. 2; this pressure transducer is fixed on the pipeline 9 by screw 1; by cover sheet 3; 7 and the bottom that is suspended in flexible member 2 semi-girders 2 (1) of cover sheet outside feed and to have in the pipeline 9 of fluid; in working order down; when the down-hole pipeline fluid flows from direction 1 or direction 2 and with a certain speed with microkinetic; just can on cantilever, produce pressure; thereby deflection deformation takes place in semi-girder 2 (1) bottoms that make flexible member 2 be suspended in the cover sheet outside; being encapsulated in flexible member 2 semi-girders 2 (1) stress concentration points by the eutectic welding is the step place; the electrology characteristic change takes place in the little solid-state pressure drag chip 5 of SOI silicon that is fixed together with semi-girder 2 (1) tops; and the change by the bridge circuit resistance produces electric signal, thus the variation of measuring downhole fluid pressure.

Fig. 3 (a) is the configuration state figure of flexible member 2 when being rotated counterclockwise 90 ℃, and flexible member 2 is designed to T shape semi-girder form, in the upper design of semi-girder 2 (1) step is arranged;

Fig. 3 (b) be the A of Fig. 3 (a) to view, be fixed in the position and the state of flexible member 2 semi-girders 2 (1) steps below for the little solid-state pressure drag chip 5 of SOI silicon.

Fig. 4 is the circuit structure diagram of the little solid-state pressure drag chip 5 of SOI silicon, in the little solid-state pressure drag chip 5 of SOI silicon based on SiO ₂Bridge circuit on the separation layer adopts the resistor stripe of four five folded structures, the R1 of four resistor stripes is relative in length and breadth with R2, R1 is relative in length and breadth with R3, R3 is relative in length and breadth with R4, the relative in length and breadth centre that is fixed on chip 5 of concentrating of R2 with R4, and protrude from the surface of chip 5, and forming the embossment shape, this shape has compact conformation, advantage that detection sensitivity is high.Owing to adopted SOI technology and titanium-platinum-golden beam leaded structure, this chip can work under 200～400 ℃ of conditions, has solved the influence that has leakage current under the high temperature, satisfies rugged surroundings downforce Testing requirement such as high temperature.

Because the little solid-state pressure drag chip of silicon of the present invention adopts the manufacturing of SOI technology, has high temperature resistant, measurement The effect that precision is high; Adopt the cantilever beam structure form also by changing the structural parameters of cantilever beam, namely change The length and width of cantilever beam and thickness can solve the measurement problem of down-hole micro-pressure or micrometeor, with screw Or vortex flow formula sensor compares, this sensor dynamic characteristic good, high temperature resistant and have the certainty of measurement height, The characteristics such as stable performance suit to use under the adverse circumstances such as high temperature, high humidity under the condition of high temperature.

Oil resistant gas well fine motion pressure of the present invention or microflow sensor can be used for temperature at 200 ℃ Pressure and flow-speed measurement under the adverse circumstances such as-400 ℃ of scopes, high static pressure 〉=100MPa have precision The advantage such as height, good reliability, dynamic characteristic are good has solved the increase along with oil well depth, pressure or stream The problem that speed is difficult to measure.

Claims

1; dynamic pressure transducer under a kind of high temperature resistant oil well; form by little solid-state pressure drag chip of SOI silicon [5] and screw [8]; it is characterized in that this pressure transducer also comprises flexible member [2]; main protection cover plate [3]; inferior cover sheet [7]; flexible member [2] and main protection cover plate [3]; inferior cover sheet [7] links together by screw [8]; the lower right design of flexible member [2] has a downward semi-girder [2 (1)]; semi-girder [2 (1)] top that the little solid-state pressure drag chip of SOI silicon [5] is housed is installed in cover sheet [3] and [7]; the bottom of semi-girder [2 (1)] is by cover sheet [3] and [7] and be suspended in the cover sheet outside, in the little solid-state pressure drag chip of said SOI silicon [5] based on SiO ₂Bridge circuit on the separation layer is designed to the resistor stripe of four five folded structures.

2, dynamic pressure transducer under the high temperature resistant oil well according to claim 1, it is characterized in that, upper design at semi-girder [2 (1)] has a step, and the little solid-state pressure drag chip of SOI silicon [5] is fixed in the step below on flexible member [2] semi-girder [2 (1)] top.

3, dynamic pressure transducer under the high temperature resistant oil well according to claim 1, it is characterized in that, the resistor stripe of four five folded structures of bridge circuit is concentrated the centre be fixed in chip [5] mutually in length and breadth relatively, and is on the surface that the embossment shape protrudes from chip [5].